阅读说明：本技术 磁控管驱动机构、工艺腔室和半导体处理设备 (Magnetron driving mechanism, process chamber and semiconductor processing equipment ) 是由 兰玥 侯珏 于 2019-04-12 设计创作，主要内容包括：本发明公开了一种磁控管驱动机构、工艺腔室和半导体处理设备。包括第一旋转臂,设置有第一旋转轴和第二旋转轴,第一旋转轴与第一驱动源相连；第二旋转臂,与第二旋转轴连接且固定设置有磁控管；传动机构,其包括第一主动轮和第一从动轮,第一主动轮与第一旋转轴连接,第一从动轮与第二旋转轴连接；至少一个传动比改变机构,分别与第一主动轮和第一从动轮传动连接,并且,传动比改变机构能够改变其与第一主动轮、第一从动轮的接触位置,以改变传动机构的传动比。这样,利用所设置的传动比改变机构,可以不必更改传动机构的结构,实现其传动比的改变,从而可以改变磁控管的运动轨迹,实现全靶腐蚀,进而可以提高晶片的加工良率,降低制作成本。(The invention discloses a magnetron driving mechanism, a process chamber and semiconductor processing equipment. The device comprises a first rotating arm, a second rotating arm and a third rotating arm, wherein the first rotating arm is provided with a first rotating shaft and a second rotating shaft; the second rotating arm is connected with the second rotating shaft and is fixedly provided with a magnetron; the transmission mechanism comprises a first driving wheel and a first driven wheel, the first driving wheel is connected with the first rotating shaft, and the first driven wheel is connected with the second rotating shaft; and the transmission ratio changing mechanism can change the contact positions of the transmission ratio changing mechanism with the first driving wheel and the first driven wheel so as to change the transmission ratio of the transmission mechanism. Therefore, by utilizing the transmission ratio changing mechanism, the structure of the transmission mechanism does not need to be changed, and the change of the transmission ratio is realized, so that the motion track of the magnetron can be changed, the full-target corrosion is realized, the processing yield of the wafer can be improved, and the manufacturing cost is reduced.)

1. A magnetron drive mechanism, comprising:

a first rotating arm provided with a first rotating shaft and a second rotating shaft, the first rotating shaft being connected to a first driving source;

the second rotating arm is connected with the second rotating shaft and is fixedly provided with a magnetron;

the transmission mechanism comprises a first driving wheel and a first driven wheel, the first driving wheel is connected with the first rotating shaft, and the first driven wheel is connected with the second rotating shaft;

the transmission ratio changing mechanism is in transmission connection with the first driving wheel and the first driven wheel respectively, and can change contact positions of the transmission ratio changing mechanism with the first driving wheel and the first driven wheel so as to change the transmission ratio of the transmission mechanism.

2. The magnetron drive mechanism of claim 1, wherein the transmission ratio varying mechanism includes a first transmission wheel, a third rotation shaft, and a fourth rotation shaft;

first drive wheel respectively with first action wheel with first from the driving connection of driving wheel, and, first drive wheel rotationally with third rotation axis is connected, the third rotation axis rotationally with fourth rotation axis is connected, the fourth rotation axis is fixed to be set up on the first swinging boom.

3. The magnetron driving mechanism as claimed in claim 2, wherein the transmission ratio varying mechanism further includes a second driving wheel and a second driven wheel in transmission connection with the second driving wheel, the second driving wheel and the second driven wheel are both fixedly disposed on the first rotating arm, the second driven wheel is fixedly connected with the fourth rotating shaft, and the second driving wheel is connected with a second driving source.

4. The magnetron drive mechanism as claimed in claim 3, wherein the second drive pulley and the second driven pulley are both of a gear structure, the second drive pulley being in mesh with the second driven pulley.

5. The magnetron driving mechanism as claimed in claim 3, wherein the second driving wheel is spaced from the second driven wheel, and the second driving wheel is in transmission connection with the second driven wheel through a timing belt.

6. The magnetron drive mechanism of claim 5, wherein the second drive source includes a drive motor, a lead screw connected to the drive motor and the third drive wheel, respectively, and a third drive wheel disposed coaxially with the second drive wheel.

7. The magnetron drive mechanism as claimed in claim 1, wherein the drive mechanism includes two of the transmission ratio changing mechanisms, a first transmission ratio changing mechanism and a second transmission ratio changing mechanism, respectively;

the driving mechanism further comprises a second driving wheel, the second driving wheel is located between the first driving wheel and the first driven wheel, the first transmission ratio changing mechanism is in transmission connection with the first driving wheel and the second driving wheel respectively, and the second transmission ratio changing mechanism is in transmission connection with the second driving wheel and the first driven wheel respectively.

8. The magnetron drive mechanism of any of claims 1 to 7, wherein the first capstan comprises a first wheel body and a first transmission arc face provided on the first wheel body;

the first driven wheel comprises a second wheel body and a second transmission arc-shaped surface arranged on the second wheel body;

the transmission ratio changing mechanism is in transmission connection with the first transmission arc-shaped surface and the second transmission arc-shaped surface respectively.

9. The magnetron drive mechanism as claimed in any one of claims 1 to 7, wherein the first driving pulley and the first driven pulley are both of a gear structure.

10. A process chamber comprising a chamber body, a magnetron positioned above the chamber body and a drive mechanism for driving the magnetron in motion, wherein the drive mechanism is as claimed in any one of claims 1 to 9.

11. A semiconductor processing apparatus, comprising the process chamber of claim 10.

Technical Field

The invention relates to the technical field of semiconductor equipment, in particular to a magnetron driving mechanism, a process chamber and semiconductor processing equipment.

Background

In the subsequent processes of integrated circuit chip fabrication, magnetron sputtering in Physical Vapor Deposition (PVD) is one of the most widely used techniques. Metal interconnects, hard masks, packaging all require the use of PVD techniques. Metal interconnects are the most critical technology, and metal wires are deposited by PVD in trenches and vias formed by photolithography to interconnect transistors to form the desired circuits. A complete metal interconnect process is generally comprised of: Barrier/Seed Layer (Barrier/Seed Layer) deposition, copper Electroplating (ECP), Chemical Mechanical Polishing (CMP). As the integration level of chips increases, the number of wiring layers required for interconnection increases. The formation of the multi-layered metal wiring is achieved by patterning through a photolithography technique after CMP, and repeating a metal interconnection process.

To reduce the collision of deposited particles with argon ions during sputtering, Self-Ionized Plasma (Self-Ionized Plasma) sputtering techniques have been developed. By applying higher energy to the target and smaller magnetron area, the sputtered particles have a very high ionization rate. The sputtering ions are pulled back to the target by the bias voltage of the target, spirally advance under the action of the strong magnetic field, collide with other atoms or the target for many times, excite more ions, and therefore the plasma is maintained. When the energy is high enough, argon is not needed, only the sputtered atoms-

The ions themselves are capable of sustaining plasma Sputtering, a technique known as Self-Sustained plasma Sputtering (SSS).

It is generally desirable that the power density applied to the target be high enough to increase the ionization rate of the sputtered particles to achieve SSS, such as by reducing the size of the magnetron to increase the power density. However, reducing the size of the magnetron requires the magnetron to be moved in a certain trajectory on the back of the target to achieve full target erosion.

Chinese granted patent CN100511569C discloses a asteroid magnetron (magnetron), and its specific disclosure can be referred to its granted text.

However, in the planetary magnetron described above, the gear mechanism is fixed once it is completed, and the trajectory of the magnetron is fixed, and if the trajectory of the magnetron is to be changed, it is necessary to newly machine a gear mechanism.

Disclosure of Invention

The invention aims to solve at least one technical problem in the prior art, and provides a magnetron driving mechanism, a process chamber and semiconductor processing equipment.

In order to achieve the above object, a first aspect of the present invention provides a magnetron driving mechanism including:

a first rotating arm provided with a first rotating shaft and a second rotating shaft, the first rotating shaft being connected to a first driving source;

the second rotating arm is connected with the second rotating shaft and is fixedly provided with a magnetron;

the transmission mechanism comprises a first driving wheel and a first driven wheel, the first driving wheel is connected with the first rotating shaft, and the first driven wheel is connected with the second rotating shaft;

the transmission ratio changing mechanism is in transmission connection with the first driving wheel and the first driven wheel respectively, and can change contact positions of the transmission ratio changing mechanism with the first driving wheel and the first driven wheel so as to change the transmission ratio of the transmission mechanism.

Optionally, the transmission ratio changing mechanism comprises a first transmission wheel, a third rotation shaft and a fourth rotation shaft;

first drive wheel respectively with first action wheel with first from the driving connection of driving wheel, and, first drive wheel rotationally with third rotation axis is connected, the third rotation axis rotationally with fourth rotation axis is connected, the fourth rotation axis is fixed to be set up on the first swinging boom.

Optionally, the transmission ratio changing mechanism further includes a second driving wheel and a second driven wheel in transmission connection with the second driving wheel, the second driving wheel and the second driven wheel are both fixedly disposed on the first rotating arm, the second driven wheel is fixedly connected with the fourth rotating shaft, and the second driving wheel is connected with a second driving source.

Optionally, the second driving wheel and the second driven wheel are both in a gear structure, and the second driving wheel is engaged with the second driven wheel.

Optionally, the second driving wheel and the second driven wheel are arranged at intervals, and the second driving wheel is in transmission connection with the second driven wheel through a synchronous belt.

Optionally, the second driving source includes a driving motor, a lead screw and a third driving wheel, the lead screw is respectively connected with the driving motor and the third driving wheel, and the third driving wheel is coaxially disposed with the second driving wheel.

Optionally, the driving mechanism comprises two of the transmission ratio changing mechanisms, namely a first transmission ratio changing mechanism and a second transmission ratio changing mechanism;

the driving mechanism further comprises a second driving wheel, the second driving wheel is located between the first driving wheel and the first driven wheel, the first transmission ratio changing mechanism is in transmission connection with the first driving wheel and the second driving wheel respectively, and the second transmission ratio changing mechanism is in transmission connection with the second driving wheel and the first driven wheel respectively.

Optionally, the first driving wheel includes a first wheel body and a first transmission arc-shaped surface disposed on the first wheel body;

the first driven wheel comprises a second wheel body and a second transmission arc-shaped surface arranged on the second wheel body;

the transmission ratio changing mechanism is in transmission connection with the first transmission arc-shaped surface and the second transmission arc-shaped surface respectively.

Optionally, the first driving wheel and the first driven wheel are both in a gear structure.

In a second aspect of the present invention, a process chamber is provided, which includes a chamber body, a magnetron located above the chamber body, and a driving mechanism for driving the magnetron to move, wherein the driving mechanism employs the driving mechanism described above.

In a third aspect of the invention, a semiconductor processing apparatus is provided, comprising the process chamber described above.

The invention provides a magnetron driving mechanism, a process chamber and semiconductor processing equipment. The drive mechanism includes: a first rotating arm provided with a first rotating shaft and a second rotating shaft, the first rotating shaft being connected to a first driving source; the second rotating arm is connected with the second rotating shaft and is fixedly provided with a magnetron; the transmission mechanism comprises a first driving wheel and a first driven wheel, the first driving wheel is connected with the first rotating shaft, and the first driven wheel is connected with the second rotating shaft; the transmission ratio changing mechanism is in transmission connection with the first driving wheel and the first driven wheel respectively, and can change contact positions of the transmission ratio changing mechanism with the first driving wheel and the first driven wheel so as to change the transmission ratio of the transmission mechanism. Therefore, by utilizing the transmission ratio changing mechanism, the structure of the transmission mechanism does not need to be changed, and the change of the transmission ratio is realized, so that the motion track of the magnetron can be changed, the full-target corrosion is realized, the processing yield of the wafer can be improved, and the manufacturing cost is reduced.

Drawings

The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:

FIG. 1 is a schematic structural view of a magnetron driving mechanism according to a first embodiment of the present invention;

FIG. 2 is a schematic structural diagram of a transmission mechanism and a transmission ratio changing mechanism according to a second embodiment of the present invention;

FIG. 3 is a schematic gear ratio diagram of a transmission according to a third embodiment of the present invention;

FIG. 4 is a schematic illustration of the gear ratios of the transmission in a fourth embodiment of the present invention;

fig. 5 is a schematic structural diagram of a transmission mechanism and a transmission ratio changing mechanism in a fifth embodiment of the present invention.

Detailed Description

The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.

As shown in fig. 1 and 2, a first aspect of the present invention relates to a magnetron driving mechanism 100, and the driving mechanism 100 includes a first rotating arm 110, a second rotating arm 120, a transmission mechanism 130, and a transmission ratio changing mechanism 140. The first rotating arm 110 is provided with a first rotating shaft 150 and a second rotating shaft 160, and the first rotating shaft 150 is connected to a first driving source (not shown, generally a rotating motor). The second rotating arm 120 is connected to the second rotating shaft 160 and fixedly provided with a magnetron 210. The transmission mechanism 130 includes a first driving pulley 131 and a first driven pulley 132, the first driving pulley 131 is connected to the first rotation shaft 150, and the first driven pulley 132 is connected to the second rotation shaft 160. The transmission ratio changing mechanism 140 is in transmission connection with the first driving wheel 131 and the first driven wheel 132 respectively, and the transmission ratio changing mechanism 140 can change the contact positions with the first driving wheel 131 and the first driven wheel 132 to change the transmission ratio of the transmission mechanism 130.

Specifically, as shown in fig. 1, the first rotating arm 110 is horizontally disposed, the first rotating shaft 150 and the second rotating shaft 160 are disposed on the first rotating arm 110 at intervals, the first rotating shaft 150 is connected to the first driving pulley 131, and the second rotating shaft 160 is connected to the first driven pulley 132. The second rotating arm 120 is located below the first rotating arm 110 and fixedly connected to the second rotating shaft 160, a magnetron 210 is disposed below the second rotating arm 120, and in order to maintain the balance of the driving mechanism 100, a first weight 220 may be symmetrically disposed on the second rotating arm 120, and a second weight 230 may be symmetrically disposed on the first rotating arm 110. When the magnetron 210 is driven to move, the first driving source drives the first rotating shaft 150 to rotate, and the first rotating shaft 150 drives the first rotating arm 110 to rotate around the first rotating shaft 150, so that the magnetron 210 can be driven to perform revolution motion around the first rotating shaft 150. Meanwhile, the first rotating shaft 150 may further drive the first driving wheel 131 to rotate, and the first driving wheel 131 drives the first driven wheel 132 to rotate via the transmission ratio changing mechanism 140, so as to drive the second rotating arm 120 to rotate around the second rotating shaft 160, thereby enabling the magnetron 210 to rotate around the second rotating shaft 160.

Further, during the movement of the driving mechanism 100, the gear ratio of the gear mechanism 130 can be changed by the gear ratio changing mechanism 140 provided. Specifically, as shown in fig. 3, the gear ratio changing mechanism 140 contacts the first driving pulley 131 at a point a and contacts the first driven pulley 132 at a point B. As shown in fig. 4, the gear ratio changing mechanism 140 contacts the first driving pulley 131 at point C and the first driven pulley 132 at point D. Note that the radius when the center of the first driving pulley 131 contacts the transmission ratio changing mechanism 140 is R1, and the radius when the center of the first driven pulley 132 contacts the transmission ratio changing mechanism 140 is R1, at this time, when the first rotating arm 110 rotates at the angular velocity of W1, the angular velocity of the first driven pulley 132 is-W1R 1/R1, that is, at this time, the transmission ratio k of the transmission mechanism 130 is-R1/R1, and as can be seen from fig. 3, the transmission ratio at this position is a negative constant having an absolute value smaller than 1. As can be seen from fig. 4, the transmission ratio at this position is a normal number with an absolute value greater than 1.

The driving mechanism 100 of the embodiment utilizes the transmission ratio changing mechanism 140 to change the transmission ratio without changing the structure of the transmission mechanism 130, so as to change the motion track of the magnetron 210, achieve full target etching, further improve the processing yield of the wafer, and reduce the manufacturing cost.

As shown in fig. 1 and 2, the gear ratio changing mechanism 140 includes a first driving wheel 141, a third rotating shaft 142, and a fourth rotating shaft 143. The first driving wheel 141 is in driving connection with the first driving wheel 131 and the first driven wheel 132, respectively, and the first driving wheel 141 is rotatably connected with the third rotating shaft 142, for example, the first driving wheel 141 can be rotatably connected with the third rotating shaft 142 by a rolling bearing 144 or the like. The third rotating shaft 142 is rotatably connected to the fourth rotating shaft 143, for example, the third rotating shaft 142 may be rotatably connected to the fourth rotating shaft 143 by a hinge or the like. The fourth rotation shaft 143 is fixedly provided on the first rotation arm 110.

Specifically, as shown in fig. 1 and 2, in the present embodiment, the first driving wheel 141 can freely rotate around the third rotating shaft 142, and the assembly formed by the first driving wheel 141, the third rotating shaft 142 and the rolling bearing 144 can integrally rotate around the fourth rotating shaft 143, so that the contact position between the first driving wheel 141 and the first driving wheel 131 and the first driven wheel 132 can be changed, the transmission ratio of the transmission mechanism 130 can be changed, the motion track of the magnetron 210 can be changed, and the full target etching can be realized. In addition, the whole assembly formed by the first driving wheel 141, the third rotating shaft 142 and the rolling bearing 144 can be controlled to continuously rotate around the fourth rotating shaft 143, so that the transmission ratio can be continuously changed, the target corrosion uniformity can be effectively improved, and the wafer processing yield can be improved.

Alternatively, the first driving wheel 131 and the first driven wheel 132 are both in a gear structure, and the first driving wheel 141 may also be in a gear structure, so that the motion transmission can be realized through gear transmission. Of course, the transmission of motion between the first driving wheel 141 and the first driving wheel 131 and the first driven wheel 132 can also be achieved by friction.

As shown in fig. 1, the transmission ratio changing mechanism 140 further includes a second driving wheel 145 and a second driven wheel 146 drivingly connected to the second driving wheel 145. The second driving wheel 145 and the second driven wheel 146 are both fixedly disposed on the first rotating arm 110, the second driven wheel 146 is fixedly connected with the fourth rotating shaft 143, and the second driving wheel 145 is connected with the second driving source.

Specifically, when the transmission ratio of the transmission mechanism 130 needs to be changed, as shown in fig. 1, the second driving wheel 145 may be driven by the second driving source to continuously rotate, the second driving wheel 145 may drive the second driven wheel 146 to continuously rotate, the second driven wheel 146 may drive the fourth rotating shaft 143 to continuously rotate, and the fourth rotating shaft 143 may drive the third rotating shaft 142 to continuously rotate, so as to drive the first driving wheel 141 to continuously rotate, thereby continuously changing the contact position between the first driving wheel 131 and the first driven wheel 132, and further continuously changing the transmission ratio.

As shown in fig. 1, the second driving wheel 145 may be spaced from the second driven wheel 146, and the second driving wheel 145 may be in transmission connection with the second driven wheel 146 through a timing belt 147. Of course, besides, the second driving wheel 145 may be in transmission connection with the second driven wheel 146 in other manners, for example, the second driving wheel 145 may be in transmission connection with the second driven wheel 146 through a chain.

In addition, the second driving wheel 145 may also be directly in contact with the second driven wheel 146, for example, when the second driving wheel 145 and the second driven wheel 146 are both of a gear structure, the second driving wheel 145 may be engaged with the second driven wheel 146.

As shown in fig. 1, the second driving source may include a driving motor (not shown), a lead screw 170, and a third driving wheel (not shown). The screw 170 is connected to the driving motor and a third driving wheel, and the third driving wheel is coaxial with the second driving wheel 145.

Specifically, when the transmission ratio of the transmission mechanism 130 needs to be changed, as shown in fig. 1, the driving motor drives the screw 170 to rotate, the screw 170 can drive the third driving wheel to rotate, the third driving wheel and the second driving wheel 145 are coaxially arranged and can drive the second driving wheel 145 to synchronously rotate, the second driving wheel 145 drives the second driven wheel 146 to synchronously rotate through the synchronous belt 147, the second driven wheel 146 drives the fourth rotating shaft 143 to synchronously rotate, the fourth rotating shaft 143 can drive the third rotating shaft 142 to synchronously rotate, so that the first driving wheel 141 can be driven to synchronously rotate, the contact positions of the first driving wheel 131 and the first driven wheel 132 can be continuously changed, and the continuous change of the transmission ratio can be further realized.

As shown in fig. 5, the driving mechanism 100 may further include two transmission ratio changing mechanisms 140, namely a first transmission ratio changing mechanism 141 and a second transmission ratio changing mechanism 142, and the specific structures of the first transmission ratio changing mechanism 141 and the second transmission ratio changing mechanism 142 may refer to the related descriptions, which are not repeated herein. In the drive mechanism 100 having the two transmission ratio changing mechanisms 140, as shown in fig. 5, the drive mechanism 100 further includes a second transmission wheel 180, the second transmission wheel 180 being located between the first driving pulley 131 and the first driven pulley 132, more precisely, the second transmission wheel 180 being located between the first transmission ratio changing mechanism 141 and the second transmission ratio changing mechanism 142, the second transmission wheel 180 being fixed to the first rotating arm 110 by a fifth rotating shaft 181. Thus, the first transmission ratio changing mechanism 141 is in transmission connection with the first driving wheel 131 and the second driving wheel 180, respectively, and the second transmission ratio changing mechanism 142 is in transmission connection with the second driving wheel 180 and the first driven wheel 132, respectively.

Specifically, as shown in fig. 5, the first transmission ratio changing mechanism 141 contacts the first driving pulley 131 at point E and contacts the second transmission pulley 180 at point F. The second gear ratio changing mechanism 142 contacts the second transmission wheel 180 at point G and contacts the first driven wheel 132 at point H. Let R1 be the radius when the center of the first drive pulley 131 contacts the first transmission ratio changing mechanism 141, R1 be the radius when the center of the second drive pulley 180 contacts the first transmission ratio changing mechanism 141, R2 be the radius when the center contacts the second transmission ratio changing mechanism 142, and R3 be the radius when the second transmission ratio changing mechanism 142 contacts the first driven pulley 132. Thus, when the first rotating arm 110 rotates at an angular velocity of W1, the rotational angular velocity of the first driven wheel 132 is W1R 1/R1R 3/R2, that is, the transmission ratio k of the transmission mechanism 130 is R1/R1R 3/R2, which is a continuously variable normal number.

It should be noted that the driving mechanism 100 may include a greater number of transmission ratio changing mechanisms 140, for example, three or more than three, in addition to one transmission ratio changing mechanism 140 (as shown in fig. 1) and two transmission ratio changing mechanisms 140 (as shown in fig. 5). When a larger number of ratio changing mechanisms 140 are provided, a transmission wheel should be provided between two adjacent ratio changing mechanisms 140 to realize motion transmission.

As shown in fig. 1 and 2, the first driving wheel 131 includes a first wheel body 131a and a first transmission arc-shaped surface 131b provided on the first wheel body 131 a. The first driven wheel 132 includes a second wheel body 132a and a second transmission arc-shaped face 132b provided on the second wheel body 132 a. Wherein, the transmission ratio changing mechanism 140 is respectively in transmission connection with the first transmission arc-shaped surface 131b and the second transmission arc-shaped surface 132b, and, more preferably, as shown in fig. 2, the circle centers of the first transmission arc-shaped surface 131b and the second transmission arc-shaped surface 132b can be the center of the fourth rotating shaft 143, so that the transmission ratio changing mechanism 140 can be better in transmission connection with the first driving wheel 131 and the first driven wheel 132.

In a second aspect of the present invention, a process chamber (not shown) is provided, which includes a chamber body, a magnetron 210 disposed above the chamber body, and a driving mechanism 100 for driving the magnetron 210 to move, wherein the driving mechanism 100 is the same as the driving mechanism 100 described above, and the detailed structure of the driving mechanism 100 can refer to the related description above, and is not repeated herein.

The process chamber of the present embodiment has the driving mechanism 100 described above, and the transmission ratio changing mechanism 140 can change the transmission ratio without changing the structure of the transmission mechanism 130, so as to change the motion trajectory of the magnetron 210, achieve full target etching, further improve the processing yield of the wafer, and reduce the manufacturing cost.

In a third aspect of the invention, a semiconductor processing apparatus (not shown) is provided that includes a process chamber as described above.

The semiconductor processing apparatus of the present embodiment has the above-mentioned process chamber, which includes the above-mentioned driving mechanism 100, and the transmission ratio changing mechanism 140 is provided to change the transmission ratio without changing the structure of the transmission mechanism 130, so as to change the motion trajectory of the magnetron 210, achieve full target etching, and further improve the processing yield of the wafer and reduce the manufacturing cost.

It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.