阅读说明：本技术 一种抛光头及抛光装置 (Polishing head and polishing device ) 是由 丁彦荣 张月 卢一泓 刘青 于 2020-07-17 设计创作，主要内容包括：本发明提供了一种抛光头及抛光装置,该抛光头用于将晶圆保持在抛光平台上。该抛光头包括壳体、与壳体连接的限位环、以及位于限位环内且抵压在晶圆表面的背膜。其中,限位环环绕于晶圆四周以限位晶圆,防止晶圆脱出抛光头。且限位环的内径大于晶圆的直径,以在晶圆与限位环之间具有缝隙。该抛光头还包括位于背膜与抛光平台之间且填充在缝隙内的环结构,该环结构用于抵压在抛光平台上,以减缓位于晶圆边缘处的抛光垫反向翘曲现象,从而防止晶圆边缘处被过度抛光,从而减缓晶圆边缘处厚度不均匀现象,以提高晶圆上成膜图形的均匀性。(The invention provides a polishing head and a polishing device, wherein the polishing head is used for keeping a wafer on a polishing platform. The polishing head comprises a shell, a limiting ring connected with the shell, and a back film which is positioned in the limiting ring and is pressed on the surface of a wafer. The limiting ring surrounds the periphery of the wafer to limit the wafer, so that the wafer is prevented from falling off the polishing head. And the inner diameter of the limiting ring is larger than the diameter of the wafer, so that a gap is formed between the wafer and the limiting ring. The polishing head further comprises a ring structure which is located between the back film and the polishing platform and filled in the gap, the ring structure is used for abutting against the polishing platform to slow down the reverse warping phenomenon of the polishing pad located at the edge of the wafer, so that the edge of the wafer is prevented from being excessively polished, the phenomenon of uneven thickness at the edge of the wafer is slowed down, and the uniformity of a film forming graph on the wafer is improved.)

1. A polishing head for holding a wafer on a polishing platen, comprising:

a housing;

the limiting ring is connected with the shell and surrounds the periphery of the wafer to limit the wafer; wherein the inner diameter of the limit ring is larger than the diameter of the wafer, so that a gap is formed between the wafer and the limit ring;

the back film is positioned in the limiting ring and is pressed against the surface of the wafer;

further comprising: and the ring structure is positioned between the back film and the polishing platform and filled in the gap, and is used for abutting against the polishing platform.

2. A polishing head according to claim 1, wherein the backing film is provided with air holes for sucking air to absorb the ring structure, and the air holes are further used for blowing air to press the ring structure against the polishing platen.

3. A polishing head according to claim 2, wherein the gas holes are further adapted to draw gas to attract the wafer or blow gas to press the wafer against the polishing platen.

4. A polishing head according to claim 1, wherein the ring structure is formed from a resin.

5. A polishing head according to claim 4, wherein the resin is a polyetheretherketone resin or a polyphenylene sulfide resin.

6. A polishing head according to claim 1, wherein the ring structure has a thickness h1, and the wafer has a thickness h 2; wherein, h1-h2 is more than or equal to-2 mm and less than or equal to 2 mm.

7. A polishing head according to claim 6, wherein the ring structure has a thickness of 0.8mm to 5 mm.

8. A polishing head according to claim 1, wherein the loop structure has a width of about 5mm to about 20 mm.

9. A polishing apparatus for polishing a surface of a wafer, comprising:

the polishing platform comprises a turntable and a polishing pad arranged on the turntable and used for polishing the wafer;

a polishing head according to any one of claims 1 to 8 located above the polishing pad.

Technical Field

The invention relates to the technical field of semiconductor manufacturing, in particular to a polishing head and a polishing device.

Background

As the design patterns on the wafer are gradually refined, the CMP (chemical mechanical Polishing) process is increasing for various purposes. Therefore, uniformity of a film formation pattern on a wafer in a CMP process becomes more important. The uniformity of a film formation pattern on a wafer in a CMP process is affected by equipment structure, mode, and overall process. In order to improve uniformity of a film pattern formed on a wafer, various methods such as Membrane Zone Control (Membrane Zone Control) and Pad Conditioning (Pad Conditioning) of a Polishing Head (Polishing Head) are used.

A chemical mechanical Polishing apparatus (CMP Polisher) is generally composed of a Polishing Pad (Polishing Pad), a Polishing Head (Polishing Head), a Slurry Dispenser (Slurry Dispenser), a Pad Conditioner (Pad Conditioner), and the like. Wherein the polishing head is configured to maintain the wafer on the polishing pad. A polishing head in the prior art has a structure as shown in fig. 1, and includes a limiting ring 1 and a back film 2, a wafer 3 is located in the limiting ring 1, the back film 2 presses against the surface of the wafer 3 to press the wafer 3 against a polishing pad 4, and the limiting ring 1 presses against the polishing pad 4. When the retainer ring 1 is pressed against the polishing pad 4, the regions of the polishing pad 4 located at both sides of the retainer ring 1 are pressed by the retainer ring 1, and thus reverse warping deformation occurs. The limit ring 1 is arranged adjacent to the wafer 3, and the polishing amount at the edge of the wafer 3 is large due to the reverse warping phenomenon of the polishing pad 4 at the edge of the limit ring 1, so that the edge of the wafer 3 is excessively polished. The thickness effect of reverse warpage of the polishing pad 4 at the edge of the wafer 3 on the edge of the wafer 3 is shown in FIG. 2, which affects the thickness at the edge of the wafer 3 in an area between 5 and 10mm from the edge of the wafer 3.

Disclosure of Invention

The invention provides a polishing head and a polishing device, which are used for improving the phenomenon of uneven thickness at the edge of a wafer caused by reverse warping of a polishing pad at the edge of the wafer and improving the uniformity of a film forming pattern on the wafer.

In a first aspect, the present invention provides a polishing head for holding a wafer on a polishing platen. The polishing head comprises a shell, a limiting ring connected with the shell, and a back film which is positioned in the limiting ring and is pressed on the surface of a wafer. The limiting ring surrounds the periphery of the wafer to limit the wafer, so that the wafer is prevented from falling off the polishing head. And the inner diameter of the limiting ring is larger than the diameter of the wafer, so that a gap is formed between the wafer and the limiting ring. The polishing head further comprises a ring structure which is located between the back film and the polishing platform and filled in the gap, the ring structure is used for abutting against the polishing platform to slow down the reverse warping phenomenon of the polishing pad located at the edge of the wafer, so that the edge of the wafer is prevented from being excessively polished, the phenomenon of uneven thickness at the edge of the wafer is slowed down, and the uniformity of a film forming graph on the wafer is improved.

In a specific embodiment, the back film is provided with an air hole for sucking air to adsorb the ring structure, the air hole is also used for blowing air to press the ring structure against the polishing platform, and the ring structure and the limiting ring are adopted as two completely independent assembly modes to slow down the warping phenomenon of the polishing pad around the limiting ring caused by the fact that the limiting ring presses against the polishing pad of the polishing platform, prevent the edge of the wafer from being excessively polished and improve the uniformity of a film forming pattern on the wafer. And facilitates assembly or disassembly of the ring structure.

In one embodiment, the air holes are also used for sucking air to absorb the wafer or blowing air to press the wafer against the polishing platform, and the structure arrangement is simplified by adopting the air hole channels which are the same as those of the fixed ring structure.

In one embodiment, the material of the ring structure is resin to prevent the ring structure from scratching the surface of the wafer. In particular, when the material of the ring structure is determined, the material of the ring structure may be polyether-ether-ketone (PEEK) resin or Polyphenylene sulfide (PPS) resin.

In one embodiment, the thickness of the ring structure is h1, and the thickness of the wafer is h 2; wherein, h1-h2 is more than or equal to-2 mm and less than or equal to 2 mm. So that the back film is pressed on the surface of the wafer and the surface of the ring structure, the thickness uniformity at the edge of the wafer is improved, and the uniformity of a film forming pattern on the wafer is improved. When specifically setting up the thickness of ring structure, the thickness of ring structure can set up to 0.8 ~ 5 mm.

In one embodiment, the ring structure has a width that is less than or equal to the difference between the inner diameter of the retaining ring and the diameter of the wafer.

In a specific embodiment, the width of the ring structure is 5 to 20 mm.

In a second aspect, the present invention further provides a polishing apparatus for polishing a surface of a wafer, the polishing apparatus comprising a polishing platen and any one of the polishing heads described above. The polishing platform comprises a turntable and a polishing pad arranged on the assembly and used for polishing the wafer, and the polishing head is located above the polishing pad.

Drawings

FIG. 1 is a schematic diagram of a prior art polishing head configuration;

FIG. 2 is a schematic diagram illustrating the thickness variation at the edge of a wafer when the wafer is polished by a polishing head in the prior art;

FIG. 3 is a schematic diagram illustrating an exemplary configuration of a polishing head according to an embodiment of the present disclosure;

FIG. 4 is a schematic diagram illustrating a positional relationship between a wafer, a ring structure, and a retaining ring of a polishing head according to an embodiment of the present invention.

Reference numerals:

10-shell 11-bracket 20-limit ring

30-backing film 40-ring structure 50-polishing pad 60-wafer

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

To facilitate understanding of the polishing head provided in the embodiment of the present invention, an application scenario of the polishing head provided in the embodiment of the present invention, which is applied to a process of polishing a surface of a wafer by a chemical mechanical polishing method for holding the wafer on a polishing platen, is first described below. The polishing head will be described in detail with reference to the accompanying drawings.

Referring to fig. 3, the polishing head according to the embodiment of the present invention includes a housing 10 and a retaining ring 20 connected to the housing 10, wherein the retaining ring 20 surrounds the wafer 60 to retain the wafer 60, so as to prevent the wafer 60 from falling off the polishing head. In a specific arrangement, the housing 10 may be an aluminum housing, stainless steel, or the like as a housing structure of the support structure. The retainer ring 20 is a ring structure that is conventionally used in the prior art to retain the wafer 60 by a cmp process to lock the wafer 60 therein. The retainer ring 20 has a space for receiving the wafer 60. When the polishing head approaches the polishing pad 50 on the polishing platen, the polishing pad 50, the housing 10 and the retainer ring 20 together fix the wafer 60 in the inner space to prevent the wafer 60 from falling out. When the limiting ring 20 and the housing 10 are connected, the limiting ring 20 may be screwed with the housing 10 to facilitate the detachment and installation of the limiting ring 20. It should be understood that the connection of the stop collar 20 to the housing 10 is not limited to the threaded connection shown above, and other connections capable of securing the stop collar 20 to the housing 10 may be used. The retainer ring 20 may be secured to the housing 10, for example, by a snap fit.

With continued reference to fig. 3, a backing film 30 is disposed within the retaining ring 20 for pressing against the surface of the wafer 60. The backing film 30 is a film body structure conventionally used in the prior art for pressing against the surface of the wafer 60, and is used for adapting the surface of the wafer 60 to compensate the unevenness caused by the particles on the surface of the wafer 60 and the surface of the wafer 60. The back film 30 may be specifically selected from a film structure similar to a silica gel-like substance and having a small hole for vacuum-pumping. In particular, when the back membrane 30 is fixed, a bracket 11 connected to the housing 10 may be provided in the retainer ring 20 to fix the back membrane 30 to the bracket 11. The bracket 11 may be a plate structure such as a flat plate, or may be a support structure composed of a plurality of truss structures as the fixing back film 30. Specifically, when the back film 30 is fixed to the bracket 11, the back film 30 may be fixed to the bracket 11 by means of adhesion, screw fastening, clamping, or the like. It should be understood that the manner of fixing the back film 30 in the retainer ring 20 is not limited to the above-mentioned manner of fixing by the bracket 11, and other manners of fixing the back film 30 and controlling the back film 30 to press against the surface of the wafer 60 may be adopted.

When the polishing platform is used, the wafer 60 is located in the retaining ring 20, the back film 30 abuts against the surface of the wafer 60, the opposite surface of the wafer 60 abuts against the polishing pad 50 of the polishing platform, and the polishing pad 50 can polish the surface of the wafer 60 as the polishing platform drives the polishing pad 50 to rotate. In particular polishing, the wafer 60 has opposite front and back surfaces, and the polishing platform can polish both the front surface of the wafer 60 and the back surface of the wafer 60, and the particular choice of polishing the front or back surface of the wafer 60 is related to the purpose of polishing. When the front surface of the wafer 60 is polished, referring to fig. 3, the lower surface (referring to the structure shown in fig. 3) of the wafer 60 is the front surface of the wafer 60, the upper surface of the wafer 60 is the back surface of the wafer 60, the back film 30 is pressed against the back surface of the wafer 60, the front surface of the wafer 60 is pressed against the polishing platform, and the polishing platform polishes the front surface of the wafer 60, so as to flatten the film pattern formed on the front surface of the wafer 60. When polishing the back surface of the wafer 60, at this time, the lower surface (referring to the structure shown in fig. 3) of the wafer 60 is the back surface of the wafer 60, the upper surface of the wafer 60 is the front surface of the wafer 6050, the back film 30 is pressed against the front surface of the wafer 60, and the back surface of the wafer 60 is pressed against the polishing pad 50 of the polishing platen.

Referring to fig. 3 and 4, in order to prevent the edge of the wafer 60 from being over-polished, the inner diameter of the stop collar 20 in the embodiment of the present invention is larger than the diameter of the wafer 60, so that a gap is formed between the wafer 60 and the stop collar 20. The gap is filled with a ring structure 40, the ring structure 40 is located between the back film 30 and the polishing platen, and the ring structure 40 abuts against the polishing platen to reduce the reverse warping degree of the polishing pad 50 located at the edge of the wafer 60, so that the edge of the wafer 60 is prevented from being excessively polished, the phenomenon of uneven thickness at the edge of the wafer 60 is reduced, and the uniformity of a film forming pattern on the wafer 60 is improved.

In determining the material of the ring structure 40, the material of the ring structure 40 may be resin to prevent the ring structure 40 from scratching the surface of the wafer 60. Specifically, the material of the ring structure 40 may be polyether-ether-ketone (PEEK) or Polyphenylene sulfide (PPS). It should be understood that the material of the ring structure 40 is not limited to the above-mentioned resin material, and is not limited to the above-mentioned polyetheretherketone resin and polyphenylene sulfide resin, and any material that can press against the polishing platen and can reduce the reverse warpage of the polishing pad 50 of the polishing platen at the edge of the wafer 60 can be used.

In particular determining the thickness of ring structure 40, the thickness of ring structure 40 is related to the thickness of wafer 60, with the thicker the thickness of wafer 60, the thicker ring structure 40. The thickness of the ring structure 40 may be set to be greater than the thickness of the wafer 60, so that the back film 30 is pressed against both the surface of the wafer 60 and the surface of the ring structure 40, thereby improving the uniformity of the thickness at the edge of the wafer 60 and the uniformity of the film-forming pattern on the wafer 60. In determining the relationship between the thickness of ring structure 40 and the thickness of wafer 60, the thickness of ring structure 40 is h1, and the thickness of wafer 60 is h 2; wherein, h1-h2 is more than or equal to-2 mm and less than or equal to 2 mm. I.e., the thickness of the ring structure may be equal to the thickness of the wafer. The thickness of the ring structure may be greater than the thickness of the wafer, but in this case, the thickness of the ring structure exceeds the thickness of the wafer by no more than 2mm, and specifically, the thickness of the ring structure may be greater than the thickness of the wafer by any value not greater than 2mm, such as 0.5mm, 1mm, 1.5mm, or 2 mm. The thickness of the ring structure may be smaller than the thickness of the wafer, but in this case, the thickness of the ring structure is smaller than the thickness of the wafer by not more than 2mm, and specifically, the thickness of the ring structure may be smaller than the thickness of the wafer by any value not more than 2mm, such as 0.5mm, 1mm, 1.5mm, or 2 mm. When the thickness of the ring structure 40 is specifically set, the thickness of the ring structure 40 may be set to 0.8 to 5 mm. Specifically, the thickness of the ring structure 40 may be any value between 0.8mm and 5mm, such as 0.8mm, 1.2mm, 1.6mm, 2.0mm, 2.4mm, 2.8mm, 3.2mm, 3.6mm, 4.0mm, 4.4mm, and 5.0 mm. It should be noted that as the ring structure 40 is pressed against the polishing pad 50, the ring structure 40 wears as the polishing pad 50 rotates, thereby making the thickness of the ring structure 40 thinner. The thickness of the ring structure 40 is referred to as the initial thickness of the ring structure 40. In addition, because the loop structure 40 is disposed within the stop collar 20, the initial thickness of the loop structure 40 cannot exceed the thickness of the stop collar 20.

In determining the width of the ring structure 40, the width of the ring structure 40 may be set to be less than the difference between the inner diameter of the retaining ring 20 and the diameter of the wafer 60, so that there is a gap between the ring structure 40 and the outer edges of the retaining ring 20 and the wafer 60, so as to facilitate assembly of the ring structure 40 and the wafer 60. The width of the ring structure 40 may be equal to the difference between the inner diameter of the retainer ring 20 and the wafer 60, so that there is no gap between the ring structure 40 and the outer edges of the retainer ring 20 and the wafer 60, thereby improving the effect of the ring structure 40 in suppressing the reverse warpage of the polishing pad 50 at the edge of the wafer 60. The width of the ring structure 40 is the difference between the outer diameter and the inner diameter of the ring structure 40, and D in fig. 3 represents the width of the ring structure 40.

Specifically, the ring structure 40 may be provided to have a width of 5mm to 20 mm. The width of the ring structure 40 may be any value between 5mm and 20mm, such as 5mm, 7mm, 9mm, 11mm, 13mm, 15mm, 17mm, and 20 mm. Additionally, it should be noted that the width of the ring structure 40 determines the size of the gap between the stop collar 20 and the wafer 60. When the width of the ring structure 40 is larger, the larger the gap between the retainer ring 20 and the wafer 60 is, i.e., the larger the difference between the inner diameter of the retainer ring 20 and the diameter of the wafer 60 is; when the width of the ring structure 40 is small, the gap between the retainer ring 20 and the wafer 60 is small, i.e., the difference between the inner diameter of the retainer ring 20 and the wafer 60 is small.

In the retaining ring structure 40, an air hole (not shown) for sucking air to absorb the ring structure 40 may be disposed on the back film 30, and the air hole is also used for blowing air to press the ring structure 40 against the polishing platen, so as to reduce the warping of the polishing pad 50 around the retainer ring 20 caused by the retainer ring 20 pressing against the polishing pad 50 of the polishing platen, prevent the edge of the wafer 60 from being over-polished, and improve the uniformity of the film-forming pattern on the wafer 60 by adopting two completely independent assembly manners of the ring structure 40 and the retainer ring 20. And sucking the ring structure 40 through the air holes of the back film 30 or blowing air to move the ring structure 40 away from the back film 30 so that the ring structure 40 is pressed against the polishing platen, thereby facilitating the assembly or disassembly of the ring structure 40.

In addition, the air holes on the backing film 30 can be used for sucking air to absorb the wafer 60 or blowing air to press the wafer 60 against the polishing platform, so as to simplify the structure by using the same air hole channel as the fixing ring structure 40. When the polishing head is used, the backing film 30 on the polishing head firstly adsorbs the ring structure 40, then the polishing head is moved to a position above the bearing platform of the wafer 60, and the polishing head is positioned by automatic positioning and other devices so that the wafer 60, the ring structure 40 and the limiting ring 20 are positioned at the positions of concentric circles; the polishing head is then brought closer to the wafer 60 so that the wafer 60 is located in the receiving space of the ring structure 40. Then, the air holes on the back film 30 suck air to adsorb the ring structure 40 and the wafer 60, and move to above the polishing platform, so as to polish the surface of the wafer 60.

It should be noted that the manner of fixing the ring structure 40 and the wafer 60 is not limited to the above-described manner, and other manners capable of fixing the ring structure 40 and the wafer 60 may be adopted.

By adopting the inner diameter of the limit ring 20 to be larger than the diameter of the wafer 60, a gap is formed between the wafer 60 and the limit ring 20; and a ring structure 40 for abutting against the polishing platform is filled in the gap to reduce the reverse warping of the polishing pad 50 at the edge of the wafer 60, so as to prevent the edge of the wafer 60 from being excessively polished, reduce the uneven thickness at the edge of the wafer 60, and improve the uniformity of the film forming pattern on the wafer 60.

In a second aspect, the present invention further provides a polishing apparatus for polishing a surface of a wafer 60, and referring to fig. 3, the polishing apparatus comprises a polishing platen and any one of the polishing heads described above. Wherein, the polishing platform comprises a turntable and a polishing pad 50 arranged on the assembly and used for polishing the wafer 60, and the polishing head is positioned above the polishing pad 50. By adopting the inner diameter of the limit ring 20 to be larger than the diameter of the wafer 60, a gap is formed between the wafer 60 and the limit ring 20; and a ring structure 40 for abutting against the polishing platform is filled in the gap to reduce the reverse warping of the polishing pad 50 at the edge of the wafer 60, so as to prevent the edge of the wafer 60 from being excessively polished, reduce the uneven thickness at the edge of the wafer 60, and improve the uniformity of the film forming pattern on the wafer 60.

The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.