阅读说明：本技术 基于多孔碳材料的碳化钽涂层及其制备方法 (Tantalum carbide coating based on porous carbon material and preparation method thereof ) 是由 华启侠 薛卫明 潘尧波 于 2020-09-21 设计创作，主要内容包括：本发明提供一种基于多孔碳材料的碳化钽涂层及其制备方法,涂层制备包括步骤：提供多孔碳基底和含钽溶液,施加外接预设电压,通过采用电吸附的方式在碳材料孔洞内部和表面吸附足量的钽元素,烧结得到形成在所述多孔碳基底上的碳化钽涂层。本发明以多孔碳基底作为基材,在多孔碳材料的孔洞内部和碳材料表面都可以形成碳化钽涂层,相比于单一的表面涂层,这种多层次的结构可以大幅度提高涂层与基底之间的结合力。另外,由于孔洞内部碳化钽的填充使得材料表面涂层与基底部分热膨胀系数的差异降低,有效减小了热失配问题,可以成功在碳材料表面获得致密的碳化钽层,减少了裂缝的出现。(The invention provides a tantalum carbide coating based on a porous carbon material and a preparation method thereof, wherein the preparation of the coating comprises the following steps: providing a porous carbon substrate and a tantalum-containing solution, applying an external preset voltage, adsorbing sufficient tantalum elements in the pores and on the surfaces of the carbon material in an electric adsorption mode, and sintering to obtain the tantalum carbide coating formed on the porous carbon substrate. According to the invention, the porous carbon substrate is used as the substrate, the tantalum carbide coating can be formed in the holes of the porous carbon material and on the surface of the carbon material, and compared with a single surface coating, the multi-layer structure can greatly improve the binding force between the coating and the substrate. In addition, due to the fact that the tantalum carbide is filled in the holes, the difference between the thermal expansion coefficients of the material surface coating and the base part is reduced, the problem of thermal mismatch is effectively reduced, a compact tantalum carbide layer can be successfully obtained on the surface of the carbon material, and cracks are reduced.)

1. A preparation method of a tantalum carbide coating is characterized by comprising the following steps:

providing a porous carbon substrate, the porous carbon substrate acting as an anode;

providing a tantalum-containing solution, and inserting the porous carbon substrate and a cathode electrode into the tantalum-containing solution;

applying a preset voltage between the porous carbon substrate and the cathode electrode to load tantalum elements on the holes and the surface of the porous carbon substrate to obtain a porous carbon substrate loaded with tantalum elements;

taking out the porous carbon substrate loaded with the tantalum element, and drying the porous carbon substrate; and

and sintering the dried porous carbon substrate loaded with the tantalum element to obtain the tantalum carbide coating formed on the porous carbon substrate.

2. The method of preparing a tantalum carbide coating according to claim 1, wherein the method of preparing a porous carbon substrate comprises: providing a carbon source and a silica particle template; performing cross-linking on the carbon source and the template, and then calcining in a preset atmosphere; and removing the template by using an etching solution after the calcination treatment to obtain the porous carbon substrate.

3. The method for preparing tantalum carbide coating according to claim 2, wherein the diameter of the silicon dioxide particles is between 5nm and 40nm, the predetermined atmosphere comprises inert gas, the temperature of the calcination treatment is between 400 ℃ and 500 ℃, and the time of the calcination treatment is between 3h and 4 h.

4. The method of claim 2, wherein the porous carbon substrate has a pore diameter of between 20nm and 40 nm; the carbon source of the porous carbon substrate comprises polystyrene, the tantalum-containing solution comprises a potassium fluotantalate solution, and the concentration of the potassium fluotantalate in the potassium fluotantalate solution is between 0.1 and 0.3 mol/L.

5. The method for preparing tantalum carbide coating according to claim 1, wherein the preset voltage is applied between 1V and 2V for a time between 0.5h and 5 h.

6. The method for preparing tantalum carbide coating according to claim 1, wherein the drying treatment is performed on the porous carbon substrate supporting tantalum element in a vacuum oven, the temperature of the vacuum oven is between 50 ℃ and 150 ℃, and the time for performing the drying treatment is between 5h and 15 h.

7. The method for preparing a tantalum carbide coating according to any one of claims 1 to 6, wherein the sintering treatment is performed by a process comprising: heating to a sintering temperature under a protective atmosphere; carrying out heat preservation treatment at the sintering temperature; and carrying out furnace cooling treatment after the heat preservation treatment.

8. The method of claim 7, wherein the sintering temperature is between 1200 ℃ and 1600 ℃; the heat preservation time of the heat preservation treatment is between 0.2h and 2 h; the temperature reduction time of the furnace temperature reduction treatment is between 0.2h and 2 h.

9. The method of claim 7, wherein the heating to the sintering temperature comprises microwave heating, the microwave heating comprising: and irradiating and heating the graphite medium by adopting one or more groups of electromagnetic waves with frequencies, wherein the frequency of the microwave heating is between 10MHz and 3 GHz.

10. A porous carbon material based tantalum carbide coating, comprising:

a porous carbon substrate having a pore diameter between 20nm and 40 nm;

a tantalum carbide coating layer formed in the pores of the porous carbon substrate and on the surface of the porous carbon substrate;

the carbon source of the porous carbon substrate comprises polystyrene, the tantalum source of the tantalum carbide coating comprises a potassium fluotantalate solution, and the concentration of potassium fluotantalate in the potassium fluotantalate solution is between 0.1 and 0.3 mol/L.

Technical Field

The invention belongs to the field of material preparation, and particularly relates to a tantalum carbide coating based on a porous carbon material and a preparation method thereof.

Background

The carbon-based material has the advantages of excellent structural strength, excellent stability, low price and the like, so that the carbon-based material has wide application in various fields. However, the easy oxidation characteristic of the carbon material surface in a high-temperature environment limits the development of the material to a certain extent. In order to improve the material performance and expand the application range of the carbon material at high temperature, the preparation of the coating on the surface of the carbon material becomes an important direction of the current material development. The tantalum carbide coating is coated on the surface of the material, which is the main method for increasing the use temperature of the carbon-based material at present. The tantalum carbide serving as the ultrahigh-temperature ceramic has the characteristics of high melting point, good hardness and excellent chemical corrosion resistance and oxidation resistance in a high-temperature environment, can be applied to the surface of a carbon-based material as a high-temperature coating, endows the carbon-based material with more excellent oxidation resistance, and improves the temperature application range and the service life of the material.

At present, the preparation method of the tantalum carbide coating mainly comprises a sol-gel method, a plasma spraying method, a chemical vapor deposition method, a slurry-sintering method and the like. However, the tantalum carbide and the carbon substrate have too large difference in expansion coefficient, so that the coating prepared by the conventional method is easy to crack and even cause peeling between the coating and the carbon substrate.

Therefore, it is necessary to provide a tantalum carbide coating and a method for preparing the same to solve the above problems of the prior art.

Disclosure of Invention

In view of the above-mentioned shortcomings of the prior art, the present invention aims to provide a porous carbon material-based tantalum carbide coating and a preparation method thereof, which are used for solving the problems that the carbon substrate coating is easy to crack, even the coating and the carbon substrate are peeled off, and the like in the prior art.

To achieve the above and other related objects, the present invention provides a method for preparing a tantalum carbide coating layer, the method comprising the steps of:

providing a porous carbon substrate, the porous carbon substrate acting as an anode;

providing a tantalum-containing solution and inserting the porous carbon substrate and a cathode electrode into the tantalum-containing solution;

applying a preset voltage between the porous carbon substrate and the cathode electrode to load tantalum elements on the holes and the surface of the porous carbon substrate to obtain a porous carbon substrate loaded with tantalum elements;

taking out the porous carbon substrate loaded with the tantalum element, and drying the porous carbon substrate; and

and sintering the dried porous carbon substrate loaded with the tantalum element to obtain the tantalum carbide coating formed on the porous carbon substrate.

Optionally, the preparation method of the porous carbon substrate comprises the following steps: providing a carbon source and a silica particle template; performing cross-linking on the carbon source and the template, and then calcining in a preset atmosphere; and removing the template by using an etching solution after the calcination treatment to obtain the porous carbon substrate.

Optionally, the silica particles have a diameter of between 5nm and 40nm, the predetermined atmosphere comprises an inert gas, the temperature of the calcination treatment is between 400 ℃ and 500 ℃, and the time of the calcination treatment is between 3h and 4 h.

Optionally, the diameter of the pores of the porous carbon substrate is between 20nm and 40 nm.

Optionally, the carbon source of the porous carbon substrate comprises polystyrene, the tantalum-containing solution comprises a potassium fluotantalate solution, and the potassium fluotantalate solution has a potassium fluotantalate concentration between 0.1 mol/L and 0.3 mol/L.

Optionally, the preset voltage is applied between 1V and 2V, and the time for applying the preset voltage is between 0.5h and 5 h.

Optionally, the drying treatment is performed on the porous carbon substrate loaded with the tantalum element in a vacuum oven, the temperature of the vacuum oven is between 50 ℃ and 150 ℃, and the time for performing the drying treatment is between 5h and 15 h.

Optionally, the sintering process includes: heating to a sintering temperature under a protective atmosphere; carrying out heat preservation treatment at the sintering temperature; and carrying out furnace cooling treatment after the heat preservation treatment.

Optionally, the sintering temperature is between 1200 ℃ and 1600 ℃; the heat preservation time of the heat preservation treatment is between 0.2h and 2 h; the temperature reduction time of the furnace temperature reduction treatment is between 0.2h and 2 h.

Optionally, the means of heating to the sintering temperature comprises microwave heating, the microwave heating comprising: and irradiating and heating the graphite medium by adopting one or more groups of electromagnetic waves with frequencies, wherein the frequency of the microwave heating is between 10MHz and 3 GHz.

The invention also provides a tantalum carbide coating based on a porous carbon material, which is preferably prepared by the preparation method of the invention, of course, other methods can be adopted, and the tantalum carbide coating based on the porous carbon material comprises:

a porous carbon substrate; and

and the tantalum carbide coating is formed in the holes of the porous carbon substrate and on the surface of the porous carbon substrate.

Optionally, the diameter of the pores of the porous carbon substrate is between 20nm and 40 nm.

Optionally, the carbon source of the porous carbon substrate comprises polystyrene, the tantalum source of the tantalum carbide coating comprises a potassium fluotantalate solution, and the concentration of the potassium fluotantalate in the potassium fluotantalate solution is between 0.1 mol/L and 0.3 mol/L.

As described above, according to the tantalum carbide coating based on the porous carbon material and the preparation method thereof, the porous carbon substrate is used as the base material, the tantalum carbide coating can be formed in the pores of the porous carbon material and on the surface of the porous carbon material, and compared with a single surface coating, the multi-layer structure can greatly improve the binding force between the coating and the substrate. In addition, due to the fact that the tantalum carbide is filled in the holes, the difference between the thermal expansion coefficients of the material surface coating and the base part is reduced, the problem of thermal mismatch is effectively reduced, a compact tantalum carbide layer can be successfully obtained on the surface of the carbon material, and cracks are reduced.

Drawings

Fig. 1 shows a technical route for preparing a tantalum carbide coating on the surface of a porous carbon material in one example of the invention.

FIG. 2 is a schematic diagram illustrating the operation principle of electro-adsorption of an exemplary porous carbon material under an external power source.

Fig. 3 shows a specific technical route for preparing a tantalum carbide coating on the surface of a porous carbon material, which is an example of the present invention.

Description of the element reference numerals

100-porous carbon substrate, 200-tantalum-containing solution and 300-graphite electrode.

Detailed Description

The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.

As in the detailed description of the embodiments of the present invention, the cross-sectional views illustrating the device structures are not partially enlarged in general scale for convenience of illustration, and the schematic views are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.

For convenience in description, spatial relational terms such as "below," "beneath," "below," "under," "over," "upper," and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these terms of spatial relationship are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Further, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present. In addition, "between … …" as used herein includes both endpoints.

In the context of this application, a structure described as having a first feature "on" a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed in between the first and second features, such that the first and second features may not be in direct contact.

It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of each component in actual implementation may be changed freely, and the layout of the components may be more complicated.

As shown in fig. 1, the present invention provides a method for preparing a tantalum carbide coating, comprising the steps of:

s1, providing a porous carbon substrate, wherein the porous carbon substrate is used as an anode;

s2, providing a tantalum-containing solution and inserting the porous carbon substrate and a cathode electrode into the tantalum-containing solution;

s3, applying a preset voltage between the porous carbon substrate and the cathode electrode to load tantalum elements on the holes and the surface of the porous carbon substrate to obtain a porous carbon substrate loaded with tantalum elements;

s4, taking out the porous carbon substrate loaded with the tantalum element, and drying the porous carbon substrate; and

and S5, sintering the dried porous carbon substrate loaded with the tantalum element to obtain the tantalum carbide coating formed on the porous carbon substrate.

The method for preparing the tantalum carbide coating layer according to the present invention will be described in detail below, wherein it should be noted that the above sequence does not strictly represent the preparation sequence of the tantalum carbide coating layer protected by the present invention, and the skilled person can change the sequence of steps according to the actual process. In which figure 1 shows only the preparation steps of a tantalum carbide coating in one example of the invention.

First, as shown in S1 in fig. 1 and fig. 2, step S1 is performed to provide a porous carbon substrate 100, the porous carbon substrate 100 being an anode.

As an example, a specific method of preparing the porous carbon substrate 100 is provided. The preparation method comprises the following steps:

1) providing a carbon source and a silica particle template; in one example, the carbon source is selected to be polystyrene, but in other examples, the carbon source may be selected to be other materials, such as polyethylene and polypropylene. Polystyrene is selected as a carbon source of the porous carbon substrate to obtain the carbon material, and the preparation process in the example can be combined to obtain the high-quality porous carbon substrate.

In addition, silica particles are used as templates in this example, and in one example, the diameter of the silica particles is between 5nm and 40nm, and may be selected to be 10nm, 20nm, 25nm, or 30nm, for example. Thereby facilitating the formation of a desired porous structure based on the silica particle template under the exemplified process conditions.

2) Performing cross-linking on the carbon source and the template, and then calcining in a preset atmosphere; for example, polystyrene is used as a carbon source, silica particles are used as a template, the template is obtained by dissolving, crosslinking and calcining in an Ar atmosphere, and the preset atmosphere can be other inert gases or protective gases such as N2 besides the Ar atmosphere. In one example, the temperature of the calcination treatment is between 400 ℃ and 500 ℃, for example, 420 ℃, 450 ℃, 480 ℃, and the time of the calcination treatment is between 3h and 4h, for example, 3.2h, 3.5h, 3.8 h. So that the polymer is fully pyrolyzed to form a carbon material for subsequent preparation of the tantalum carbide coating.

3) And removing the template by using an etching solution after the calcination treatment to obtain the porous carbon substrate. For example, the template is removed by treatment with an HF solution, which dissociates the original silica particles with HF, leaving the sites of the previously filled silica particles as voids. The present invention forms a porous carbon substrate excellent in performance based on the combined action of the above-described respective conditions.

By way of example, the porous carbon substrate 100 has a pore diameter between 20nm and 40nm, and may be, for example, 25nm, 30nm, or 35 nm. Therefore, the tantalum carbide coating with the required density can be formed favorably, the large holes enable the required adsorption quantity to be larger, the density is relatively reduced, the small holes enable ions to be adsorbed to the surface more easily, and the ions entering the holes are relatively fewer and are difficult to form the tantalum carbide coating in the holes. The pores of the porous carbon substrate can be directly formed according to the diameter of the silicon dioxide particles.

Next, as shown in S2 of fig. 1 and fig. 2, step S2 is performed to provide a tantalum-containing solution 200, and the porous carbon substrate 100 and a cathode electrode, which may be, for example, a graphite electrode 300, are inserted into the tantalum-containing solution 200. The strong adsorbability of the porous material enables the tantalum element to be firmly adsorbed on the carbon material substrate.

For example, the tantalum-containing solution 200 is selected to be a potassium fluorotantalate solution having a potassium fluorotantalate concentration of 0.1 mol/L to 0.3 mol/L, for example, 0.15mol/L, 0.2mol/L, or 0.25mol/L, and having a limited solubility, and if the concentration is too high, the potassium fluorotantalate precipitates to affect the electro-adsorption, and if the concentration is too low, the amount of tantalum ions is insufficient, and the amount of adsorption is also reduced. Of course, other soluble tantalum-containing compounds that can be used to practice the embodiments of the present invention are also possible. In another example, the temperature of the potassium fluotantalate solution is 35-100 deg.C, 40 deg.C, 50 deg.C, 60 deg.C, or boiling water. The solubility of potassium fluorocarbonate in cold water is poor, while the solubility increases greatly with increasing temperature.

Next, as shown in S3 in fig. 1 and fig. 2, step S3 is performed to apply a predetermined voltage between the porous carbon substrate 100 and the cathode electrode 300, so that the pores and the surface of the porous carbon substrate are loaded with the tantalum element, thereby obtaining the tantalum element-loaded porous carbon substrate. Wherein, in an example, the preset voltage applied is between 1V-2V, for example, it can be1.2V and 1.5V, and the time for applying the preset voltage is between 0.5h and 5h, and can be 0.8h, 1h and 1.2 h. Electro-adsorption is a physical behavior, and if the voltage is too large, an electrolytic reaction occurs, that is, ions existing in water may generate an electrochemical reaction, which is not beneficial to the adsorption of tantalum-containing elements, and if the voltage is too small, the adsorption degree is too small, and the efficiency is low. Through the application time of the preset voltage, the complete electro-adsorption is favorably ensured, and if the overlong preset voltage time is increased, the influence on the adsorption is little, and the efficiency is influenced. For example, in the case of the above-described embodiment, TaF₇ ^2-Adsorbed on the porous carbon substrate as shown in figure 2.

Next, as shown in S4 in fig. 1 and fig. 2, step S4 is performed to take out the porous carbon substrate supporting tantalum element and perform a baking process thereon. As an example, the drying treatment is performed on the porous carbon substrate supporting the tantalum element in a vacuum oven, the temperature of the vacuum oven is between 50 ℃ and 150 ℃, for example, 80 ℃, 100 ℃, 120 ℃, and the time for performing the drying treatment is between 5h and 15h, 8h, 10h, and 12 h. The method is favorable for ensuring that the water on the porous carbon substrate loaded with the tantalum element is completely dried without being continuously placed in an oven, thereby saving time, improving efficiency and saving energy.

Finally, as shown in S5 in fig. 1 and fig. 2, step S5 is performed to sinter the baked porous carbon substrate supporting the tantalum element, so as to obtain a tantalum carbide coating layer formed on the porous carbon substrate. In one example, the thickness of the coating is between about 5 μm and 20 μm, and may be 8 μm, 12 μm, 15 μm, 18 μm.

As an example, the process of performing the sintering treatment includes: heating to a sintering temperature under a protective atmosphere; carrying out heat preservation treatment at the sintering temperature; and (3) carrying out furnace cooling treatment after the heat preservation treatment, namely, after the sintering is finished, turning off a power supply, cooling the sample along with the furnace, and then taking out the sample to finally obtain the graphite material with the uniform and compact tantalum carbide coating. In the sintering process, the tantalum element reacts with carbon to generate tantalum carbide, and an ideal tantalum carbide coating can be obtained by controlling the sintering process. The porous carbon material loaded with tantalum element after being dried can be put into a crucible for sintering.

In a further example, the sintering temperature is between 1200 ℃ and 1600 ℃, for example 1300 ℃, 1400 ℃, 1500 ℃; the heat preservation time of the heat preservation treatment is between 0.2h and 2h, and can be 0.8h, 1h and 0.5 h; the high-quality coating can be obtained through the heat preservation time, if the sintering time is too short, the tantalum and the carbon can not completely react, the coating is not compact enough, and if the sintering time is too long, the efficiency is reduced, and energy is wasted. In addition, the temperature reduction time of the furnace temperature reduction treatment is between 0.2h and 2h, and can be 1h, 1.2h and 1.8 h. Wherein the protective atmosphere can be Ar gas, and can also be other inert gases or N₂And the like. The coating according to the invention is obtained by the action of the process described above.

As an example, the means of heating to the sintering temperature comprises microwave heating comprising: the graphite medium is irradiated and heated by electromagnetic waves with one or more groups of frequencies, and the frequency of the microwave heating is between 10MHz and 3GHz, such as 50MHz, 1GHz and 2 GHz. Based on microwave heating, generate heat by inside earlier and then spread to the outside, by inside to holistic heating mode promptly, can reduce the required temperature of sintering, microwave heating is fast moreover, and the sintering time is also short, obtains better density, has energy-efficient characteristics, does benefit to industrial production more. The microwave sintering is performed by heating an internal medium, different elements exist in the material, the microwave wavelength absorbed by each element is different, and when two or more frequencies are adopted for irradiation, the material can be sintered more fully, and the heating speed is correspondingly higher. In one example, different microwave frequencies are selected according to the existing elements of the material, and a specific corresponding microwave heating band is selected for each material.

The porous carbon substrate and the tantalum carbide coating formed on the porous carbon substrate obtained by the process design can increase the bonding force between the tantalum carbide coating and the carbon substrate through the porous structure, and based on the porous structure, the tantalum carbide can be formed on the surface of the carbon substrate and in the holes to form a structure similar to a nested structure, so that the tantalum carbide on the surface is prevented from being peeled. The problem of thermal mismatch between the original tantalum carbide and carbon materials is relieved, so that the difference of the expansion coefficients of the coating and the substrate is reduced, the performance of the material is improved, and the service life of the material is prolonged. In general, the coefficient of expansion of carbon materials is low, while the coefficient of expansion of tantalum carbide is high, and the difference in the coefficients of expansion is a problem of thermal mismatch, which causes the coating to easily peel off. The presence of pores corresponds to the transition from a substrate surface that originally contained only uniform carbon to a material whose surface contained both carbon and tantalum carbide (resulting from the pores). The original thermal expansion coefficient of the carbon on the surface of the substrate is kept, and the thermal expansion coefficient of the tantalum carbide in the holes is larger, so that the overall thermal expansion coefficient of the whole surface is larger, and the difference between the thermal expansion coefficient of the carbon and the thermal expansion coefficient of the upper tantalum carbide coating is reduced. That is, the invention relates to a method for obtaining a compact tantalum carbide coating on the surface of a carbon material by taking a porous carbon material as a substrate through electric adsorption and microwave heating sintering, wherein tantalum carbide can be formed inside holes and on the surface of the carbon material in the porous carbon material, and compared with a single surface coating, the multilayer structure can greatly improve the binding force between the coating and the substrate. In addition, due to the fact that the tantalum carbide is filled in the holes, the difference between the thermal expansion coefficients of the material surface coating and the base part is reduced, the problem of thermal mismatch is effectively reduced, a compact tantalum carbide layer can be successfully obtained on the surface of the carbon material, and cracks are reduced. The tantalum carbide coating formed by the method can be formed on the side wall of a silicon carbide single crystal growth crucible, and is beneficial to protecting the side wall of the crucible and growing the silicon carbide single crystal.

The invention also provides a tantalum carbide coating based on the porous carbon material, and the tantalum carbide coating is preferably prepared by the preparation method of the invention, and of course, other methods can also be adopted. The specific material characteristics may refer to the description in the coating preparation method in this embodiment, and are not described herein again. The porous carbon material-based tantalum carbide coating comprises: the coating comprises a porous carbon substrate and a tantalum carbide coating, wherein the tantalum carbide coating is formed in holes of the porous carbon substrate and on the surface of the porous carbon substrate.

By way of example, the porous carbon substrate has a pore diameter between 20nm and 40 nm.

By way of example, the carbon source for the porous carbon substrate comprises polystyrene and the tantalum source for the tantalum carbide coating comprises a potassium fluotantalate solution, wherein the concentration of potassium fluotantalate in the potassium fluotantalate solution is between 0.1 mol/L and 0.3 mol/L.

Specific examples of processes incorporating the invention are given below. In addition, based on the above description of the present invention, fig. 3 shows a specific technical route for preparing a tantalum carbide coating on the surface of a porous carbon material.