Achromatic phase retarder made of crystal and manufacturing method
阅读说明：本技术 利用晶体制成的消色差相位延迟器和制作方法 (Achromatic phase retarder made of crystal and manufacturing method ) 是由 钟海政 陈小梅 路文高 于 2019-04-16 设计创作，主要内容包括：本发明涉及一种利用晶体制成的消色差相位延迟器和制作方法,其中,所述晶体的结构为纳米晶嵌入晶体主基质；所述纳米晶的尺寸为1nm～20nm并且在所述晶体主基质的一个晶面内分布；所述晶体主基质为折射率小于2、带隙大于2.5eV的透明单晶；并且对于400nm～3000nm波长的光,所述晶体主基质与所述纳米晶的折射率差的范围为0.15～2.00,其中,所述消色差相位延迟器是厚度为0.1cm～0.4cm的晶体片。(The invention relates to an achromatic phase retarder made of crystals and a manufacturing method thereof, wherein the crystals have a structure that nanocrystals are embedded in a crystal host matrix; the size of the nano-crystal is 1 nm-20 nm and is distributed in one crystal plane of the crystal host matrix; the crystal host matrix is a transparent single crystal with the refractive index less than 2 and the band gap greater than 2.5 eV; and the difference of the refractive index between the crystal host matrix and the nanocrystal is in the range of 0.15-2.00 for light with a wavelength of 400-3000 nm, wherein the achromatic phase retarder is a crystal plate with a thickness of 0.1-0.4 cm.)
1. An achromatic phase retarder made of a crystal, wherein:
the structure of the crystal is that the nano-crystal is embedded into a crystal host matrix;
the size of the nano-crystal is 1 nm-20 nm and is distributed in one crystal plane of the crystal host matrix;
the crystal host matrix is a transparent single crystal with the refractive index less than 2 and the band gap greater than 2.5 eV; and is
The difference between the refractive index of the crystal host matrix and the refractive index of the nanocrystal with respect to light having a wavelength of 400 to 3000nm is in the range of 0.15 to 2.00,
wherein the achromatic phase retarder is a crystal plate having a thickness of 0.1cm to 0.4 cm.
2. The achromatic phase retarder of claim 1, wherein the material of the crystal host matrix is any one selected from the group consisting of:
the general formula is A4BX6Wherein A is one or two of Na, K, Rb and Cs, B is one or two of Pb, Sn, Ge, Mn, Mg, Mo, Cu, Zn, Cd, Ca and Sr, and X is one or two of F, Cl, Br and I;
the general structural formula is R4BX6Wherein R is one or both of: CH (CH)3(CH2)nNH3 +、NH＝CHNH3 +、C(NH2)3 +And C6H5(CH2)nNH2Wherein n is 0 to 10, B is one or two of Pb, Sn, Ge, Mn, Mg, Mo, Cu, Zn, Cd, Ca and Sr, and X is one or two of F, Cl, Br and I;
the material with the structural general formula AX, wherein A is one or two of Na, K, Rb and Cs, and X is one or two of F, Cl, Br and I;
a material of the general structural formula RX, wherein R is one or both of: CH (CH)3(CH2)nNH3 +、NH＝CHNH3 +、C(NH2)3 +And C6H5(CH2)nNH2Which isWherein n is 0 to 10, and X is one or two of F, Cl, Br and I;
citric acid trisodium Na3C6H5O7·2H2O；
Quartz; and
mica.
3. The achromatic phase retarder of claim 1, wherein the material of the nanocrystals is any one selected from the group consisting of:
the general structural formula is ABX3Wherein A is one or two of K, Rb and Cs, B is one or two of Pb, Sn, Ge, Mn, Mo, Cu and Sr, and X is one or two of F, Cl, Br and I;
the general structure formula is RBX3Wherein R is one or both of: NH ═ CHNH3 +And CH3(CH2)nNH3 +Wherein n is 0 to 3, B is one or two of Pb, Sn, Ge, Mn, Mo, Cu and Sr, and X is one or two of F, Cl, Br and I;
carbon points; and
MgF。
4. the achromatic phase retarder of claim 1, wherein the crystal host matrix has a refractive index less than 1.8.
5. The achromatic phase retarder of claim 1, wherein the phase retarder is a wafer having a diameter of 0.5-3 cm.
6. The achromatic phase retarder according to claim 1, wherein the applicable wavelength of the phase retarder is 400nm to 3000 nm.
7. A method for producing an achromatic phase retarder using a crystal having a structure in which nanocrystals are embedded in a crystal host matrix, the nanocrystals having a size of 1 to 20nm and being distributed in one crystal plane of the crystal host matrix, the crystal host matrix being a transparent single crystal having a refractive index of less than 2 and a band gap of more than 2.5eV, and a difference in refractive index between the crystal host matrix and the nanocrystals for light having a wavelength of 400 to 3000nm being in a range of 0.15 to 2.00,
wherein the method comprises the following steps:
and preparing the crystal into a wafer with the diameter of 0.5-3 cm and the thickness of 0.1-0.4 cm.
8. The method of claim 7, wherein the crystal is made by embedding the nanocrystals in situ into the crystal host matrix.
9. The method of claim 7, wherein the crystal is made by forming nanocrystals in a later-regulated manner after growing the crystal host matrix.
10. The method of claim 9, wherein the post-regulation comprises: applying energy to the crystal host matrix by irradiation with a high-energy laser, X-ray, or electron beam, or by high-temperature heating, pressurization, or ultrasonic vibration, so that nanocrystals are formed in the structure of the crystal host matrix.
Technical Field
The invention relates to the technical field of optics, in particular to an achromatic phase retarder made of crystals and a manufacturing method thereof.
Background
The optical phase retarder is one of important devices for realizing light phase modulation and light polarization state conversion, and the achromatic phase retarder can be used in a large spectral range due to the fact that the dependence degree of phase retardation on wavelength is weakened, so that the achromatic phase retarder has wide application prospects in the fields of spectral shaping, laser tuning, optical communication and the like. The achromatic phase retarders in the current market have two types, namely a birefringence type retarder and a metamaterial type retarder based on a spiral antenna theory according to different design mechanisms, and the two types generally have the defects of low delay precision, low achromatism, complex structure, relatively troublesome operation and the like, and need to be subjected to fine optical design during production.
Therefore, there is a need for an achromatic phase retarder having a simple structure, a simple and convenient preparation, and a high retardation precision, and being suitable for a wide band.
Disclosure of Invention
Therefore, the invention provides the achromatic phase retarder manufactured by using the crystal and the manufacturing method thereof, and the crystal has a structure of embedding the nanocrystal into the crystal host matrix through the structural design of the crystal, so that the performance of an achromatic quarter-wave plate of a piece of crystal can be achieved.
The invention innovatively discovers the property of the crystal with the structure of embedding the nanocrystalline into the crystal host matrix in the aspect of achromatic phase delay, thereby utilizing the property of the crystal to manufacture the achromatic phase retarder, replacing a composite wave plate formed by compounding a plurality of wafers in the prior art or achieving the effect of modifying a wide band from linearly polarized light to circularly polarized light by using a plurality of crystals, having high delay precision, reducing the difficulty of complex and difficult phase retarder preparation, optical path adjustment and device assembly processes, and greatly improving the stability of the polarization state of light.
According to an aspect of the present invention, there is provided an achromatic phase retarder made of a crystal, wherein:
the structure of the crystal is that the nano-crystal is embedded into a crystal host matrix;
the size of the nano-crystal is 1 nm-20 nm and is distributed in one crystal plane of the crystal host matrix;
the crystal host matrix is a transparent single crystal with the refractive index less than 2 and the band gap greater than 2.5 eV; and is
The difference between the refractive index of the crystal host matrix and the refractive index of the nanocrystal with respect to light having a wavelength of 400 to 3000nm is in the range of 0.15 to 2.00,
wherein the achromatic phase retarder is a crystal plate having a thickness of 0.1cm to 0.4 cm.
Preferably, the material of the crystal host matrix is any one selected from the group consisting of:
the general formula is A4BX6Wherein A is one or two of Na, K, Rb and Cs, B is one or two of Pb, Sn, Ge, Mn, Mg, Mo, Cu, Zn, Cd, Ca and Sr, and X is one or two of F, Cl, Br and I;
the general structural formula is R4BX6Wherein R is one or both of: CH (CH)3(CH2)nNH3 +、NH＝CHNH3 +、C(NH2)3 +And C6H5(CH2)nNH2Wherein n is 0 to 10, B is one or two of Pb, Sn, Ge, Mn, Mg, Mo, Cu, Zn, Cd, Ca and Sr, and X is one or two of F, Cl, Br and I;
the material with the structural general formula AX, wherein A is one or two of Na, K, Rb and Cs, and X is one or two of F, Cl, Br and I;
a material of the general structural formula RX, wherein R is one or both of: CH (CH)3(CH2)nNH3 +、NH＝CHNH3 +、C(NH2)3 +And C6H5(CH2)nNH2Wherein n is 0 to 10, and X is one or two of F, Cl, Br, and I;
citric acid trisodium Na3C6H5O7·2H2O；
Quartz; and mica.
Preferably, the material of the nanocrystal is any one selected from the group consisting of:
the general structural formula is ABX3Wherein A is one or two of K, Rb and Cs, B is one or two of Pb, Sn, Ge, Mn, Mo, Cu and Sr, and X is F, Cl,One or both of Br and I;
the general structure formula is RBX3Wherein R is one or both of: NH ═ CHNH3 +And CH3(CH2)nNH3 +Wherein n is 0 to 3, B is one or two of Pb, Sn, Ge, Mn, Mo, Cu and Sr, and X is one or two of F, Cl, Br and I;
carbon points; and MgF.
Preferably, the refractive index of the crystal host matrix is less than 1.8.
Preferably, the phase retarder is a wafer having a diameter of 0.5cm to 3 cm.
Preferably, the applicable wavelength of the phase retarder is 400nm to 3000 nm.
According to another aspect of the present invention, there is provided a method of manufacturing an achromatic phase retarder using a crystal having a structure in which nanocrystals, which have sizes ranging from 1nm to 20nm and are distributed in one crystal plane of a crystal host matrix, are embedded in the crystal host matrix, which is a transparent single crystal having a refractive index less than 2 and a band gap greater than 2.5eV, and a difference in refractive index between the crystal host matrix and the nanocrystals ranges from 0.15 to 2.00 for light having a wavelength ranging from 400nm to 3000nm,
wherein the method comprises the following steps:
and preparing the crystal into a wafer with the diameter of 0.5-3 cm and the thickness of 0.1-0.4 cm.
In one embodiment, the crystal is made by embedding the nanocrystals in situ into the crystal host matrix.
In another embodiment, the crystal is made by forming nanocrystals in a later-regulated manner after the crystal host matrix is grown.
Preferably, the later regulation comprises: applying energy to the crystal host matrix by irradiation with a high-energy laser, X-ray, or electron beam, or by high-temperature heating, pressurization, or ultrasonic vibration, so that nanocrystals are formed in the structure of the crystal host matrix.
One or more embodiments of the above-described aspects may have the following advantages or benefits over the prior art.
The invention provides an achromatic phase retarder made of crystals and a manufacturing method thereof, the invention forms a new crystal by embedding nano crystals in a single crystal, finally realizes the whole performance of an achromatic quarter-wave plate by only using a single crystal, and can delay the optical phase of a visible light to infrared (400 nm-3000 nm) ultra-wide waveband
The design process of the existing achromatic phase retarder often influences the technical requirements of the phase retarder such as the width of an applicable waveband, the delay precision and the like, the achromatic phase retarder provided by the invention eliminates the adverse effects from the source, is convenient to use and adjust, greatly reduces the difficulty of optical path adjustment and device assembly process, and improves the coupling of optical components, the optical communication performance and the stability of an optical path.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by the practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention.
A, b, c in fig. 1 are schematic diagrams of the structure of a nanocrystal-embedded crystal host matrix in the x, y and z directions, respectively, according to an embodiment of the invention.
FIG. 2a, FIG. 2b and FIG. 2c are the angle between the linearly polarized light vibration direction and the crystal plane
Detailed Description
The following detailed description of the embodiments of the present invention will be provided with reference to the drawings and examples, so that how to apply the technical means to solve the technical problems and achieve the technical effects can be fully understood and implemented. It should be noted that, as long as there is no conflict, the embodiments and the features of the embodiments of the present invention may be combined with each other, and the technical solutions formed are within the scope of the present invention.
In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without some of these specific details or with other methods described herein.
The conventional achromatic phase retarder is an achromatic wave plate composed of two or more pieces of the same material or different materials, and the achromatic wavelength thereof depends on an allowable error of achromatism. However, to achieve a wider allowable band, it is usually necessary to stick six different materials together. The disadvantages of the conventional achromatic phase retarder are: (1) a plurality of crystals are needed, and the cost of consumed materials is high; (2) fine optical design is required; (3) the controllable wave band is narrow, and the wavelength is about +/-150 nm of the central wavelength.
Compared with the traditional achromatic phase retarder, the prior art also provides a broadband optical phase retarder made of metamaterials. The metamaterial is a material which is processed in a micro-nano mode and has a periodic structure, circular dichroism usually exists in the nature of the metamaterial, light beams are superposed on the circular dichroism and oscillate back and forth in a Fabry-Perot resonant cavity (F-P cavity) formed by metamaterial substances, and wide-bandwidth polarization conversion from linearly polarized light to circularly polarized light can be achieved by changing optical path difference.
Although the above-mentioned broadband optical phase retarder is suitable for broadband, it has the following disadvantages: (1) the preparation is complex; (2) due to the limit of processing precision of the metamaterial, only the infrared band can be regulated and controlled at present.
The broadband achromatic phase delayer aims to overcome the defects of low delay precision, low achromatism, complex structure, relatively troublesome operation and the like of the broadband achromatic phase delayer in the prior art. First, an embodiment of the present invention provides an achromatic phase retarder made of a crystal.
Wherein, the structure of the crystal is 'nanocrystal embedded crystal host matrix'; the size of the nano-crystal is 1 nm-20 nm and is distributed in one crystal plane of the crystal main matrix; the crystal host matrix is a transparent single crystal with the refractive index less than 2 and the band gap greater than 2.5 eV; and the difference between the refractive index of the crystal host matrix and the refractive index of the nanocrystal with respect to light having a wavelength of 400 to 3000nm is in the range of 0.15 to 2.00. Wherein the achromatic phase retarder is a crystal plate having a thickness of 0.1cm to 0.4 cm.
Fig. 1 a, b, c are schematic diagrams of a host matrix structure of a nanocrystal-embedded crystal in x, y, and z directions, respectively, according to an embodiment of the invention. As shown in fig. 1, the darker interior portions are embedded nanocrystals and the lighter exterior portions are the crystal host matrix.
In one embodiment of the present invention, the host crystal is a wide band gap transparent single crystal having a refractive index of less than 2 (based on wavelength λ of 532 nm). The wide-band-gap transparent single crystal is a single crystal with a band gap larger than 2.5eV, and when the band gap of the single crystal is larger than 2.5eV, the single crystal is transparent or is greenish and bluish.
In one embodiment of the present invention, the material of the nanocrystals is different from the material of the crystal host matrix, and the nanocrystals are distributed within one crystal plane of the crystal host matrix. Nanocrystals are nanoparticles of about 1nm to 20nm in size that have a refractive index that is not equal to the refractive index of the crystal host matrix, i.e., the refractive index of the nanocrystal is greater or less than the refractive index of the crystal host matrix. Preferably, in an embodiment of the present invention, the difference between the refractive index of the host crystal matrix and the refractive index of the nanocrystal is 0.15 to 2.00 for light having a wavelength of 400nm to 3000 nm.
The refractive index difference between the wide band gap transparent single crystal and the nanocrystalline ranges from 0.15 to 2.00 for any wavelength in a wave band of 400nm to 3000 nm.
In an embodiment of the invention, the material of the crystal host matrix is any one selected from the group consisting of:
the general formula is A4BX6Wherein A is one or two of Na, K, Rb and Cs, B is one or two of Pb, Sn, Ge, Mn, Mg, Mo, Cu, Zn, Cd, Ca and Sr, and X is one or two of F, Cl, Br and I;
the general structural formula is R4BX6Wherein R is one or both of: CH (CH)3(CH2)nNH3 +、NH＝CHNH3 +、C(NH2)3 +And C6H5(CH2)nNH2Wherein n is 0 to 10, B is one or two of Pb, Sn, Ge, Mn, Mg, Mo, Cu, Zn, Cd, Ca and Sr, and X is one or two of F, Cl, Br and I;
the material with the structural general formula AX, wherein A is one or two of Na, K, Rb and Cs, and X is one or two of F, Cl, Br and I;
a material of the general structural formula RX, wherein R is one or both of: CH (CH)3(CH2)nNH3 +、NH＝CHNH3 +、C(NH2)3 +And C6H5(CH2)nNH2Wherein n is 0 to 10, and X is one or two of F, Cl, Br, and I;
citric acid trisodium Na3C6H5O7·2H2O；
Quartz; and mica.
In an embodiment of the invention, the material of the nanocrystal is any one selected from the group consisting of:
the general structural formula is ABX3Wherein A is one or two of K, Rb and Cs, B is one or two of Pb, Sn, Ge, Mn, Mo, Cu and Sr, and X is one or two of F, Cl, Br and I;
the general structure formula is RBX3Wherein R is one or both of: NH ═ CHNH3 +And CH3(CH2)nNH3 +Wherein n is 0 to 3, B is one or two of Pb, Sn, Ge, Mn, Mo, Cu and Sr, and X is one or two of F, Cl, Br and I;
carbon points; and MgF.
It should be noted that, in one embodiment of the present invention, the structural formula is a4BX6The material of (1) is exemplified, wherein when A is two of Na, K, Rb and Cs, it means A in the general structural formula4Is composed of any two elements of Na, K, Rb and Cs, provided that the sum of the numerical indices of the formulae of the two elements is equal to A4The numerical subscripts of (a) are sufficient. For example A4May be Na2K2、Rb2Cs2Or Rb3K, respectively corresponding to the general formula of Na2K2BX6、Rb2Cs2BX6Or Rb3KBX6. In addition, when B, R and X are two of the plurality of elements, they are the same as in the case of a described above and will not be described again here.
Preferably, the refractive index of the crystal host matrix is less than 1.8 (subject to wavelength λ 532 nm).
In one embodiment of the present invention, a crystal having a structure in which a nanocrystal is embedded in a crystal host matrix is formed by: the nanocrystals are embedded in the crystalline host matrix in situ. Namely, the in-situ embedding mode can form the structure that the crystal host matrix comprises the nano-crystals in situ when the crystals grow.
In another embodiment of the present invention, the crystal having the structure of "nanocrystal embedded crystal host" may also be formed by: the nano-crystalline is prepared by forming nano-crystals in a later regulation mode after the crystal host matrix grows out. The process is as follows: energy is applied to the crystal host matrix by irradiation with high-energy laser, X-ray, electron beam, or the like, or by high-temperature heating, pressurization, ultrasonic vibration, or the like, so that nanocrystals are formed in the structure of the crystal host matrix.
It should be noted that the crystal having the "nanocrystal embedded crystal host matrix" structure may be obtained by other methods, and the present invention is not limited thereto.
In one embodiment of the present invention, the achromatic phase optical retarder formed of a crystal is a crystal plate having a thickness of 0.1cm to 0.4 cm.
Preferably, the crystal is made into a crystal wafer with the thickness of 0.1 cm-0.4 cm after slicing, grinding and polishing. The full performance of the achromatic quarter-wave plate can be realized by only one crystal plate. The dicing means dicing with a blade, a laser, or the like. The polishing refers to polishing the crystal wafer on sand paper, nylon cloth, wool cloth, fiber, flocked wool or silk by using polishing powder or polishing paste until the surface is mirror smooth.
In order to optimize the light transmission effect, the achromatic phase retarder made of crystal is preferably a crystal wafer having a diameter of 0.5cm to 3cm and a thickness of 0.1cm to 0.4 cm.
In one embodiment of the present invention, the applicable wavelength range of the achromatic phase retarder made of crystal is 400nm to 3000 nm. That is, the achromatic phase retarder can realize all the performances of the achromatic quarter-wave plate for light having any wavelength in a wavelength band of 400nm to 3000 nm. That is, the phase of incident linearly polarized light can be delayedOr will originally haveCircular deviation of phase differenceThe light-polarized light is regulated and controlled to be linearly polarized light with the phase difference of pi or other integral multiples, or the linearly polarized light is regulated and controlled to be circularly polarized light, and the mutual conversion of the linearly polarized light and the circularly polarized light can be realized.
FIG. 2a, FIG. 2b and FIG. 2c are the angle between the linearly polarized light vibration direction and the crystal plane And
Accordingly, an embodiment of the present invention further provides a method for fabricating an achromatic phase retarder using a crystal having a structure in which nanocrystals are embedded in a crystal host matrix, the nanocrystals have a size of 1nm to 20nm and are distributed in one crystal plane of the crystal host matrix, the crystal host matrix is a transparent single crystal having a refractive index of less than 2 and a band gap of more than 2.5eV, and a difference in refractive index between the crystal host matrix and the nanocrystals ranges from 0.15 to 2.00 for light having a wavelength of 400nm to 3000nm,
wherein, the method comprises the following steps:
the crystal is made into a wafer with the diameter of 0.5 cm-3 cm and the thickness of 0.1 cm-0.4 cm.
In one embodiment of the invention, the crystal is made by embedding nanocrystals in situ in a crystal host matrix.
In one embodiment of the present invention, the crystal is made by forming nanocrystals in a later-regulated manner after the crystal host matrix is grown.
In an embodiment of the present invention, the later-stage regulation includes: energy is applied to the crystal host matrix by irradiation with high-energy laser, X-ray, or electron beam, or by high-temperature heating, pressurization, or ultrasonic vibration, so that nanocrystals are formed in the structure of the crystal host matrix.
In summary, the invention provides an achromatic phase retarder made of crystals and a manufacturing method thereof, and the invention forms a new crystal by embedding nano crystals in a single crystal from the structural design of a crystal material, and finally realizes the whole performance of the achromatic quarter-wave plate by only using a single crystal, and can delay the optical phase of a super-wide waveband from visible light to infrared (400 nm-3000 nm)The wave band can also be phase-shiftedThe light modulation is controlled to be pi or integral multiple thereof, thereby avoiding the complex process and optical design that the prior broadband achromatic wave plate needs to adhere a plurality of crystals and the likeAnd (6) carrying out the process.
The design process of the existing achromatic phase retarder often influences the technical requirements of the phase retarder such as the width of an applicable waveband, the delay precision and the like, the achromatic phase retarder provided by the invention eliminates the adverse effects from the source, is convenient to use and adjust, greatly reduces the difficulty of optical path adjustment and device assembly process, and improves the coupling of optical components, the optical communication performance and the stability of an optical path.
It is to be understood that the disclosed embodiments of the invention are not limited to the particular process steps or materials disclosed herein, but rather, are extended to equivalents thereof as would be understood by those of ordinary skill in the relevant art. It is also to be understood that the terminology used herein is for the purpose of describing particular embodiments only, and is not intended to be limiting.
Reference in the specification to "an embodiment" means that a particular feature, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention. Thus, the appearances of the phrase "an embodiment" appearing in various places throughout the specification are not necessarily all referring to the same embodiment.
Furthermore, the described features or characteristics may be combined in any other suitable manner in one or more embodiments. In the above description, certain specific details are provided, such as thicknesses, amounts, etc., to provide a thorough understanding of embodiments of the invention. One skilled in the relevant art will recognize, however, that the invention may be practiced without one or more of the specific details, or with other methods, components, materials, and so forth.
While the above examples are illustrative of the principles of the present invention in one or more applications, it will be apparent to those of ordinary skill in the art that various changes in form, usage and details of implementation can be made without departing from the principles and concepts of the invention. Accordingly, the invention is defined by the appended claims.
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