Miller's clamp protection circuit, drive circuit, chip and intelligent IGBT module
阅读说明：本技术 一种米勒钳位保护电路、驱动电路、芯片及智能igbt模块 (Miller's clamp protection circuit, drive circuit, chip and intelligent IGBT module ) 是由 曾卓 方敏 于 2020-08-19 设计创作，主要内容包括：本发明公开了一种米勒钳位保护电路、驱动电路、芯片及智能IGBT模块,与待驱动器件连接,包括：用于提供驱动信号的驱动主电路；用于降低电压毛刺的米勒开关；用于根据驱动主电路的中间信号自动控制米勒开关开启和关闭的米勒开关控制电路；所述驱动主电路与电源、米勒开关控制电路、米勒开关的一端及待驱动器件连接,所述米勒开关的另一端接地。本发明通过驱动主电路驱动待驱动器件,并且由驱动主电路的中间信号控制米勒开关控制电路对米勒开关进行开启或关闭,实现了自动降低电压毛刺的目的。(The invention discloses a Miller clamp protection circuit, a driving circuit, a chip and an intelligent IGBT module, which are connected with a device to be driven, and comprise: a main driving circuit for providing a driving signal; a miller switch for reducing voltage glitch; the Miller switch control circuit is used for automatically controlling the opening and closing of the Miller switch according to the intermediate signal for driving the main circuit; the driving main circuit is connected with a power supply, the Miller switch control circuit, one end of the Miller switch and the device to be driven, and the other end of the Miller switch is grounded. The driving main circuit drives the to-be-driven device, and the intermediate signal of the driving main circuit controls the Miller switch control circuit to open or close the Miller switch, so that the aim of automatically reducing voltage burrs is fulfilled.)
1. A Miller clamp protection circuit, connected to a device to be driven, comprising:
a main driving circuit for providing a driving signal;
a miller switch for reducing voltage glitch;
the Miller switch control circuit is used for automatically controlling the opening and closing of the Miller switch according to the intermediate signal for driving the main circuit;
the driving main circuit is connected with a power supply, the Miller switch control circuit, one end of the Miller switch and the device to be driven, and the other end of the Miller switch is grounded.
2. The miller clamp protection circuit of claim 1, wherein the drive main circuit comprises:
a level conversion circuit for performing level conversion;
a delay matching circuit for performing delay matching;
an output drive circuit for outputting a drive signal;
the current limiting circuit is used for performing current limiting output on the output signal;
the level conversion circuit, the delay matching circuit, the output driving circuit and the current limiting circuit are sequentially connected, and the level conversion circuit is further connected with the Miller switch control circuit.
3. The miller clamp protection circuit of claim 2, wherein the current limiting circuit comprises a first resistor, one end of the first resistor is connected to the output of the output driver circuit, and the other end of the first resistor is connected to the miller switch control circuit, the miller circuit, and the device to be driven.
4. The miller clamp protection circuit of claim 1, further comprising a reference circuit for providing a reference voltage, the reference circuit coupled to the miller switch control circuit.
5. The miller clamp protection circuit of claim 4, wherein the miller switch control circuit comprises:
a comparison circuit for comparing the input circuit with a reference voltage;
and the switch control circuit is used for receiving and outputting the Miller switch control voltage according to the voltage of the level conversion circuit and the voltage of the comparison circuit.
6. The miller clamp protection circuit according to claim 5, wherein the comparator circuit comprises a comparator, a non-inverting input terminal of the comparator is connected to the reference circuit, an inverting input circuit of the comparator is connected to the main driving circuit, one terminal of the miller switch and the device to be driven, and an output terminal of the comparator is connected to the switch control circuit.
7. The miller clamp protection circuit of claim 6, wherein the switch control circuit comprises a latch, an S-pin of the latch is connected to the output of the comparator, an R-pin of the latch is connected to the main driver circuit, and a Q-pin of the latch is connected to the gate of the miller switch.
8. A driver circuit comprising a miller clamp protection circuit as claimed in any one of claims 1 to 7.
9. A driving chip, comprising a chip body, wherein the miller clamp protection circuit according to any one of claims 1 to 7 is packaged in the chip body; the Miller switch and the main drive circuit are connected with a device to be driven through the LO pin.
10. An intelligent IGBT module, comprising: a module body having disposed therein the miller clamp protection circuit of any of claims 1-7 or the driver circuit of claim 8.
Technical Field
The invention relates to the field of IGBT driving, in particular to a Miller clamp protection circuit, a driving circuit, a chip and an intelligent IGBT module.
Background
Insulated Gate Bipolar Transistors (IGBTs) play an important role in power semiconductors based on their ability to be driven at high currents and high voltages. Most industrial applications typically use three-phase inverters to drive high voltage, high current IGBTs. For the gate driver chip of these high-power devices, take the half-bridge driver chip as an example, when normal work, because dv/dt's existence, can make the lower bridge IGBT still can appear burr voltage after closing, lead to IGBT misconduction, the lower bridge switches on simultaneously this moment, causes unnecessary loss, thereby can make the module generate heat and burn out the device when serious.
Thus, the prior art has yet to be improved and enhanced.
Disclosure of Invention
In view of the defects of the prior art, the invention aims to provide a miller clamp protection circuit, a driving circuit, a chip and an intelligent IGBT module.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a Miller clamp protection circuit, which is connected with a device to be driven, and comprises:
a main driving circuit for providing a driving signal;
a miller switch for reducing voltage glitch;
the Miller switch control circuit is used for automatically controlling the opening and closing of the Miller switch according to the intermediate signal for driving the main circuit;
the driving main circuit is connected with a power supply, the Miller switch control circuit, one end of the Miller switch and the device to be driven, and the other end of the Miller switch is grounded.
The main driving circuit comprises:
a level conversion circuit for performing level conversion;
a delay matching circuit for performing delay matching;
an output drive circuit for outputting a drive signal;
the current limiting circuit is used for performing current limiting output on the output signal;
the level conversion circuit, the delay matching circuit, the output driving circuit and the current limiting circuit are sequentially connected, and the level conversion circuit is further connected with the Miller switch control circuit.
The current limiting circuit comprises a first resistor, one end of the first resistor is connected with the output end of the output driving circuit, and the other end of the first resistor is connected with the Miller switch control circuit, the Miller circuit and the device to be driven.
The reference circuit is connected with the Miller switch control circuit.
The miller switch control circuit comprises:
a comparison circuit for comparing the input circuit with a reference voltage;
and the switch control circuit is used for receiving and outputting the Miller switch control voltage according to the voltage of the level conversion circuit and the voltage of the comparison circuit.
The comparison circuit comprises a comparator, the positive phase input end of the comparator is connected with the reference circuit, the negative phase input circuit of the comparator is connected with the main driving circuit, one end of the Miller switch and the device to be driven, and the output end of the comparator is connected with the switch control circuit.
The switch control circuit comprises a latch, an S pin of the latch is connected with the output end of the comparator, an R pin of the latch is connected with the main driving circuit, and a Q pin of the latch is connected with the grid electrode of the Miller switch.
A drive circuit comprising a miller clamp protection circuit as hereinbefore described.
A driver chip comprising a chip body in which is packaged a miller clamp protection circuit as described above; the Miller switch and the main drive circuit are connected with a device to be driven through the LO pin.
An intelligent IGBT module comprising: a module body having disposed therein either the miller clamp protection circuit as described above or the drive circuit as described above.
Compared with the prior art, the miller clamp protection circuit, the driving circuit, the chip and the intelligent IGBT module provided by the invention are connected with a device to be driven, and comprise: a main driving circuit for providing a driving signal; a miller switch for reducing voltage glitch; the Miller switch control circuit is used for automatically controlling the opening and closing of the Miller switch according to the intermediate signal for driving the main circuit; the driving main circuit is connected with a power supply, the Miller switch control circuit, one end of the Miller switch and the device to be driven, and the other end of the Miller switch is grounded. The driving main circuit drives the to-be-driven device, and the intermediate signal of the driving main circuit controls the Miller switch control circuit to open or close the Miller switch, so that the aim of automatically reducing voltage burrs is fulfilled.
Drawings
FIG. 1 is a functional block diagram of the structure of the Miller clamp protection circuit provided by the present invention;
FIG. 2 is a functional block diagram of the structure of the intelligent IGBT module provided by the invention;
fig. 3 is a circuit diagram of the miller clamp protection circuit according to the present invention.
Reference numerals:
an intelligent IGBT module 10; a driver chip 100; a first upper bridge driving chip 201; a second upper bridge driver chip 202; a third upper bridge driver chip 203; a first upper bridge IGBT 301; a second upper bridge IGBT 301; a third upper bridge IGBT 301; a first lower bridge IGBT 401; a second lower bridge IGBT 402; a third lower bridge IGBT 403; a driving
Detailed Description
The invention provides a Miller clamp protection circuit, a driving circuit, a chip and an intelligent IGBT module, which are connected with a device to be driven, the device to be driven is driven by the driving main circuit, and the Miller switch control circuit is controlled by an intermediate signal of the driving main circuit to open or close a Miller switch, so that the aim of automatically reducing voltage burrs is fulfilled.
The embodiments of the present invention are intended to explain technical concepts of the present invention, technical problems to be solved, technical features constituting technical solutions, and technical effects to be brought about in more detail. The embodiments are explained below, but the scope of the present invention is not limited thereto. Further, the technical features of the embodiments described below may be combined with each other as long as they do not conflict with each other.
For the convenience of understanding the embodiments of the present application, relevant elements related to the embodiments of the present application will be described first.
IGBT: the Insulated Gate Bipolar Transistor is a composite fully-controlled voltage-driven power semiconductor device composed of a BJT (Bipolar junction Transistor) and an MOS (Insulated Gate field effect Transistor), and has the advantages of both high input impedance of the MOSFET and low on-state voltage drop of the GTR. The GTR saturation voltage is reduced, the current carrying density is high, but the driving current is large; the MOSFET has small driving power, high switching speed, large conduction voltage drop and small current carrying density. The IGBT integrates the advantages of the two devices, and has small driving power and reduced saturation voltage. The method is very suitable for being applied to the fields of current transformation systems with direct-current voltage of 600V or more, such as alternating-current motors, frequency converters, switching power supplies, lighting circuits, traction transmission and the like.
A level conversion circuit: the I/O voltages are converted in the circuit so that communication can be established between devices of different I/O voltages.
Time delay matching circuit: delay matching is a metric used to represent the accuracy of the match of the internal propagation delays between the channels. If a signal is applied to the inputs of both channels simultaneously, the time delay of the two channel outputs is a delay matching value. The smaller the delay matching value, the better the performance that can be achieved by the gate driver.
dv/dt: dv/dt represents the rate of change of voltage, and in high-voltage frequency conversion, because the output voltage is a series of rectangular pulses with equal amplitude and unequal width, the larger the amplitude of the pulse is, the shorter the rising delay or falling delay time is, and the larger dv/dt is. The dv/dt value has a great influence on the performance and reliability of the frequency converter: 1) the greater the dv/dt, the more the frequency converter will be subjected to a surge current, which may burn the frequency converter. 2) The larger dv/dt is, the larger damage is to the insulating material, so that the insulating material is easy to age, and the service life of the frequency converter is shortened. 3) dv/dt is large and some electronic switching devices are prone to misleading.
The inventor researches and discovers that in the field of half-bridge IGBT driving, when an IGBT is turned off, a burr voltage can be generated after the lower bridge IGBT is turned off due to dv/dt, so that the lower bridge IGBT is turned on by mistake, and then both the upper bridge IGBT and the lower bridge IGBT are turned on, and thus unnecessary loss or device damage can be caused. Therefore, in order to effectively control the gate voltage of the IGBT and prevent the occurrence of an excessively high glitch voltage, the circuit needs to be redesigned to reduce the value of the glitch voltage so as to avoid the IGBT from being turned on by mistake.
In view of the above problems in the prior art, the present invention realizes the purpose of automatically reducing voltage glitch by redesigning the internal circuit of the driving chip, dividing the internal circuit into the
For example, the present embodiment may be applied to the scenario as illustrated in fig. 2. In this scenario, as shown in fig. 2, fig. 2 shows an Intelligent IGBT module 10 (IPM) formed by integrating an IGBT driver chip and an IGBT. In this embodiment, the internal circuit of the IGBT driver chip is redesigned, so that the driver voltage pin of the IGBT driver chip and the bleeder pin of the miller switch Q1 are combined into one, and directly connected to the gate of the IGBT, thereby obtaining the miller clamp protection circuit shown in fig. 1. The miller clamp protection circuit is connected to the