阅读说明：本技术 一种自适应输入电压的p沟道mos管驱动电路 (P-channel MOS tube driving circuit capable of self-adapting to input voltage ) 是由 李志荣 于 2020-07-22 设计创作，主要内容包括：本发明公开一种自适应输入电压的P沟道MOS管驱动电路,包括第一MOS管、三极管、第一电阻、二极管、第一恒流开关模块、第二恒流开关模块及触发源,第一MOS管的栅极分别与三极管的发射极和第一恒流开关模块连接,第一MOS管的漏极连接有电路输出端,第一MOS管的源极分别连接电路的输入端和三极管的集电极,二极管设置在三极管的发射极和基极之间,三极管的基极分别连接二极管的负极和第二恒流开关模块,第一电阻的一端与电路输入端连接,第一电阻的另一端与三极的基极连接,第一恒流开关模块和第二恒流开关模块均与触发源连接。本发明能够自适应不同的输入电压,拓宽了输入电压的范围。(The invention discloses a P-channel MOS tube driving circuit capable of self-adapting to input voltage, which comprises a first MOS tube, a triode, a first resistor, a diode, a first constant current switch module, a second constant current switch module and a trigger source, wherein the grid electrode of the first MOS tube is respectively connected with the emitting electrode of the triode and the first constant current switch module, the drain electrode of the first MOS tube is connected with the output end of the circuit, the source electrode of the first MOS tube is respectively connected with the input end of the circuit and the collector electrode of the triode, the diode is arranged between the emitting electrode and the base electrode of the triode, the base electrode of the triode is respectively connected with the negative electrode of the diode and the second constant current switch module, one end of the first resistor is connected with the input end of the circuit, the other end of the first resistor is connected with the base electrode of the triode, and the first constant current switch module. The invention can adapt to different input voltages, and broadens the range of the input voltage.)

1. The utility model provides a P channel MOS pipe drive circuit of self-adaptation input voltage which characterized in that: comprises a first MOS transistor Q1, a triode Q2, a first resistor R1, a diode D1, a first constant current switch module, a second constant current switch module and a trigger source, the grid electrode of the first MOS tube Q1 is respectively connected with the emitter electrode of the triode Q2 and the first constant current switch module, the drain electrode of the first MOS tube Q1 is connected with the output end of the circuit, the source electrode of the first MOS tube Q1 is respectively connected with the input end of the circuit and the collector electrode of the triode Q2, the diode D1 is arranged between the emitter and the base of the triode Q2, the base of the triode Q2 is respectively connected with the cathode of the diode D1 and the second constant current switch module, one end of the first resistor R1 is connected with the circuit input end, the other end of the first resistor R1 is connected with the base electrode of the triode Q2, the first constant current switch module and the second constant current switch module are both connected with the trigger source.

2. The adaptive input voltage P-channel MOS transistor driver circuit of claim 1, wherein: the anode of the diode D1 is connected to the gate of the first MOS transistor Q1, the emitter of the transistor Q2, and the first constant current switch module, and the cathode of the diode D1 is connected to the first resistor R1, the emitter of the transistor Q2, and the second constant current switch module.

3. The adaptive input voltage P-channel MOS transistor driver circuit of claim 1, wherein: the first constant current switch module comprises a second resistor R2, a first constant current diode D2 and a second MOS transistor Q3 which are connected in sequence.

4. The adaptive input voltage P-channel MOS transistor driver circuit as claimed in claim 3, wherein: the second constant current switch module comprises a third resistor R3, a second constant current diode D3 and a third MOS transistor Q4 which are connected in sequence.

5. The adaptive-input-voltage P-channel MOS transistor driving circuit as claimed in claim 4, wherein: the gate of the second MOS transistor Q3 is connected to the gate of the third MOS transistor Q4, the source of the second MOS transistor Q3 and the source of the third MOS transistor Q4 are both grounded, and the drain of the second MOS transistor Q3 and the drain of the third MOS transistor Q4 are connected to the first constant current diode D2 and the second constant current diode D3, respectively.

6. The adaptive-input-voltage P-channel MOS transistor driving circuit as claimed in claim 4, wherein: one end of the second resistor R2 is connected with the gate of the first MOS transistor Q1, and the other end of the second resistor R2 is connected with the first constant current diode D2.

7. The adaptive-input-voltage P-channel MOS transistor driving circuit as claimed in claim 4, wherein: one end of the third resistor R3 is connected with the base electrode of the triode Q2, and the other end of the third resistor R3 is connected with the second constant current diode D3.

8. The adaptive-input-voltage P-channel MOS transistor driving circuit as claimed in claim 4, wherein: the second MOS transistor Q3 and the third MOS transistor Q4 are both N-channel MOS transistors.

Technical Field

The invention belongs to the technical field of battery production and manufacturing, and particularly relates to a P-channel MOS tube driving circuit capable of self-adapting to input voltage.

Background

The P-channel MOS transistor is a common switching device, and the hole mobility of the P-channel MOS transistor is low, so that the transconductance of the PMOS transistor is smaller than that of the N-channel MOS transistor under the condition that the geometric dimension of the MOS transistor is equal to the absolute value of the working voltage. In addition, the absolute value of the threshold voltage of a P-channel MOS transistor is generally high, and a high operating voltage is required. The voltage and polarity of its power supply are incompatible with bipolar transistor-transistor logic circuit. Because the PMOS circuit has simple process and low price, some medium-scale and small-scale digital control circuits still adopt the PMOS circuit technology.

However, the inventor finds that the existing scheme has at least the following defects: due to the characteristics of the grid electrode voltage and the source electrode voltage of the P-channel MOS tube, the driving circuit needs to provide the driving voltage which is equivalent to the source electrode voltage of the P-channel MOS tube to close the P-channel MOS tube, so that when the input voltage is changed, the driving voltage is also correspondingly changed, and the application range of the P-channel MOS tube is limited.

Disclosure of Invention

The invention aims to: aiming at the defects of the prior art, the P-channel MOS tube driving circuit capable of self-adapting to the input voltage is provided, the problem that the driving voltage of the P-channel MOS tube needs to change along with the input voltage is solved, the driving circuit can self-adapt to different input voltages, and the range of the input voltage is widened.

In order to achieve the purpose, the invention adopts the following technical scheme:

a P-channel MOS tube driving circuit adaptive to input voltage comprises a first MOS tube Q1, a triode Q2, a first resistor R1, a diode D1, a first constant current switch module, a second constant current switch module and a trigger source, the grid electrode of the first MOS tube Q1 is respectively connected with the emitter electrode of the triode Q2 and the first constant current switch module, the drain electrode of the first MOS tube Q1 is connected with the output end of the circuit, the source electrode of the first MOS tube Q1 is respectively connected with the input end of the circuit and the collector electrode of the triode Q2, the diode D1 is arranged between the emitter and the base of the triode Q2, the base of the triode Q2 is respectively connected with the cathode of the diode D1 and the second constant current switch module, one end of the first resistor R1 is connected with the circuit input end, the other end of the first resistor R1 is connected with the base electrode of the triode Q2, the first constant current switch module and the second constant current switch module are both connected with the trigger source.

As an improvement of the P-channel MOS transistor driving circuit capable of adapting to the input voltage, according to the present invention, an anode of the diode D1 is connected to a gate of the first MOS transistor Q1, an emitter of the triode Q2, and the first constant current switch module, respectively, and a cathode of the diode D1 is connected to the first resistor R1, the emitter of the triode Q2, and the second constant current switch module, respectively.

As an improvement of the P-channel MOS transistor driving circuit with adaptive input voltage according to the present invention, the first constant current switch module includes a second resistor R2, a first constant current diode D2, and a second MOS transistor Q3, which are sequentially connected.

As an improvement of the P-channel MOS transistor driving circuit with adaptive input voltage according to the present invention, the second constant current switch module includes a third resistor R3, a second constant current diode D3, and a third MOS transistor Q4, which are connected in sequence.

As an improvement of the P-channel MOS transistor driving circuit with adaptive input voltage according to the present invention, a gate of the second MOS transistor Q3 is connected to a gate of the third MOS transistor Q4, a source of the second MOS transistor Q3 and a source of the third MOS transistor Q4 are both grounded, and a drain of the second MOS transistor Q3 and a drain of the third MOS transistor Q4 are respectively connected to the first constant current diode D2 and the second constant current diode D3.

As an improvement of the input voltage adaptive P-channel MOS transistor driving circuit according to the present invention, one end of the second resistor R2 is connected to the gate of the first MOS transistor Q1, and the other end of the second resistor R2 is connected to the first constant current diode D2.

As an improvement of the P-channel MOS transistor driving circuit with adaptive input voltage according to the present invention, one end of the third resistor R3 is connected to the base of the transistor Q2, and the other end of the third resistor R3 is connected to the second constant current diode D3.

As an improvement of the adaptive input voltage P-channel MOS transistor driving circuit of the present invention, the second MOS transistor Q3 and the third MOS transistor Q4 are both N-channel MOS transistors.

The invention has the advantages that the invention comprises a first MOS transistor Q1, a triode Q2, a first resistor R1, a diode D1, a first constant current switch module, a second constant current switch module and a trigger source, the grid electrode of the first MOS tube Q1 is respectively connected with the emitter electrode of the triode Q2 and the first constant current switch module, the drain electrode of the first MOS tube Q1 is connected with the output end of the circuit, the source electrode of the first MOS tube Q1 is respectively connected with the input end of the circuit and the collector electrode of the triode Q2, the diode D1 is arranged between the emitter and the base of the triode Q2, the base of the triode Q2 is respectively connected with the cathode of the diode D1 and the second constant current switch module, one end of the first resistor R1 is connected with the circuit input end, the other end of the first resistor R1 is connected with the base electrode of the triode Q2, the first constant current switch module and the second constant current switch module are both connected with the trigger source. Because the grid and source voltage characteristics of the P-channel MOS tube, the driving circuit needs to provide the driving voltage which is equivalent to the source voltage of the P-channel MOS tube to close the P-channel MOS tube, so that when the input voltage changes, the driving voltage also correspondingly changes, and the use range of the P-channel MOS tube is limited, therefore, by adopting the structure that the first constant current switch module and the second constant current switch module are both connected with the trigger source, when the trigger source gives a signal to ensure that the first constant current switch module and the second constant current switch module are closed, the voltage difference between the grid and the source of the first MOS tube Q1 is the difference between the input voltage and the conduction voltage between the base and the emitter of the triode Q2, because the conduction voltage between the base and the emitter of the triode Q2 is very small and is lower than the conduction voltage of the first MOS tube Q1, and the conduction voltage is equal to the difference between the grid voltage and the source voltage, and because a tiny current is added to the base of the triode Q2, large current can be obtained on the collector, so that the first MOS tube Q1 is quickly cut off and closed to output; meanwhile, the base current of the triode Q2 is very small and can be ignored, at this time, the current flowing through the R1 is the middle constant current source current of the constant second constant current switch module, and is equal to the product of the resistance value of the first resistor R1 and the constant current source current in the second constant current switch module, the voltage difference between the gate and the source of the first MOS transistor Q1 is equal to the sum of the voltage difference between the first resistor R1 and the conduction voltage between the base and the emitter of the triode Q2, and the voltage difference between the gate and the source of the first MOS transistor Q1 is also unchanged because the voltage difference between the first resistor R1 and the constant current source current are unchanged. Therefore, the input voltage is changed, the voltage difference between the grid electrode and the source electrode of the first MOS tube Q1 is not changed, the driving circuit can be adaptive to different input voltages, and the range of the input voltage is widened. The invention solves the problem that the driving voltage of the P-channel MOS tube needs to change along with the input voltage, so that the driving circuit can be adaptive to different input voltages, and the range of the input voltage is widened.

Drawings

Fig. 1 is a circuit diagram of embodiment mode 1 of the present invention.

Fig. 2 is a circuit diagram of embodiment 2 of the present invention.

Detailed Description

As used in the specification and in the claims, certain terms are used to refer to particular components. As one skilled in the art will appreciate, manufacturers may refer to a component by different names. This specification and claims do not intend to distinguish between components that differ in name but not function. In the following description and in the claims, the terms "include" and "comprise" are used in an open-ended fashion, and thus should be interpreted to mean "include, but not limited to. "substantially" means within an acceptable error range, and a person skilled in the art can solve the technical problem within a certain error range to substantially achieve the technical effect.

In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", horizontal ", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.

In the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.

The present invention will be described in further detail with reference to fig. 1 to 2, but the present invention is not limited thereto.