阅读说明：本技术 原子探针分析方法、装置及记录媒体 (Atom probe analysis method, atom probe analysis apparatus, and recording medium ) 是由 洪世玮 于 2019-03-27 设计创作，主要内容包括：本揭露提供一种原子探针分析方法、装置及记录媒体。所述方法包括下列步骤：利用脉冲激光器照射包括测试样品的原子探针；利用质谱仪分析由原子探针表面射出的离子以获得质谱图,其中所述离子包括一元素的多种量体且具有多种价数；以及对各量体的不同价数的离子在质谱图中对应的质荷比的计数值进行归一化,以获得各量体的离子所占的比例,并用以修正各量体的离子的定量结果。(The present disclosure provides an atom probe analysis method, an atom probe analysis apparatus and a recording medium. The method comprises the following steps: irradiating an atom probe including a test sample with a pulsed laser; analyzing ions ejected from the surface of the atom probe by using a mass spectrometer to obtain a mass spectrum, wherein the ions comprise a plurality of quantums of an element and have a plurality of valences; and normalizing the count values of the mass-to-charge ratios corresponding to the ions with different valences in the mass spectrogram to obtain the proportion of the ions in each quantum, and correcting the quantitative result of the ions in each quantum.)

1. An atom probe analysis method, adapted for use in an electronic device having a processor, the method comprising:

irradiating an atom probe including a test sample with a pulsed laser;

analyzing ions ejected from the surface of the atom probe with a mass spectrometer to obtain a mass spectrum, wherein the ions comprise multiple quanta of an element and have multiple valences; and

and normalizing the counting values of the mass-to-charge ratios corresponding to the ions with different valences in the mass spectrogram to obtain the proportion of the ions in each quantum, and correcting the quantitative result of the ions in each quantum.

2. The method of claim 1, wherein normalizing count values of mass-to-charge ratios corresponding to different valences of said ions in said mass spectrum for each of said volumes to obtain a proportion of said ions in each of said volumes, and for correcting a quantification of said ions for each of said volumes comprises:

calculating the proportion of the ions of each quantum by using the count value of the mass-to-charge ratio, corresponding to the ions of different valences of each quantum, in the mass spectrogram, which is not overlapped with the ions of other quantum; and

multiplying a count value of mass-to-charge ratios of the ions in the mass spectra corresponding to the overlapping volumes by the ratio and corresponding atomic number of each of the volumes to obtain a count value of the ions corresponding to the valence number of each of the volumes of the mass-to-charge ratios as a quantitative result of the ions of each of the volumes.

3. The method of claim 1, wherein the method further comprises:

feeding back the quantitative result of the ions of each of the volumes after correction to adjust a charging state ratio by a power supply of the pulse laser so that the ratio of the ions of different valence numbers of each of the volumes is kept constant.

4. The method of claim 1, wherein the method further comprises:

establishing a learning model by utilizing a machine learning algorithm to learn the relationship between initial conditions during the analysis of the test sample and the quantitative results of the ions of each of the volumes obtained by the analysis; and

and identifying fingerprints of each vector of the test sample in the mass spectrogram during execution by using the learning model, and correcting the quantitative result of each vector according to the fingerprints.

5. The method of claim 1, wherein the element comprises a dopant element used in semiconductor processing, the dopant element comprising phosphorus, arsenic, boron, titanium, aluminum.

6. The method of claim 1, wherein the initial conditions comprise a pulse laser energy, a state-of-charge ratio, a voltage applied to the atom probe, a temperature of the atom probe, a detection rate, or a frequency of the pulse laser.

7. The method of claim 1, wherein the volumes comprise single volumes, double volumes, and triple volumes.

8. An atom probe analysis apparatus, comprising:

the connecting device is used for connecting the pulse laser and the mass spectrometer;

a processor coupled to the connection device and configured to:

irradiating an atom probe comprising a test sample with the pulsed laser;

analyzing ions ejected from the atom probe surface with the mass spectrometer to obtain a mass spectrum, wherein the ions comprise multiple quanta of an element and have multiple valences; and

and normalizing the counting values of the mass-to-charge ratios corresponding to the ions with different valences in the mass spectrogram to obtain the proportion of the ions in each quantum, and correcting the quantitative result of the ions in each quantum.

9. The atom probe analysis device of claim 8 wherein the processor comprises calculating a proportion of the ions of each of the volumes using a count of mass-to-charge ratios corresponding to different valences of the ions of each of the volumes in the mass spectrum that do not overlap with the ions of other volumes, and multiplying the count of mass-to-charge ratios of the ions corresponding to the overlapping volumes in the mass spectrum by the proportion and corresponding atomic number of each of the volumes to obtain the count of the ions of the valences of each of the volumes corresponding to the mass-to-charge ratios as a result of quantifying the ions of each of the volumes.

10. A computer-readable recording medium recording a program, the program being loaded by a processor to execute:

irradiating an atom probe including a test sample with a pulsed laser;

collecting ions ejected from the surface of the atom probe and analyzing the ions by a mass spectrometer to obtain a mass spectrum, wherein the ions comprise multiple quanta of an element and have multiple valences; and

and normalizing the counting values of the mass-to-charge ratios corresponding to the ions with different valences in the mass spectrogram to obtain the proportion of the ions in each quantum, and correcting the quantitative result of the ions in each quantum.

Technical Field

Embodiments of the present disclosure relate to an atom probe analysis method, an atom probe analysis apparatus, and a recording medium.

Background

In semiconductor manufacturing, it is desirable to quantitatively analyze the concentration of certain elements (e.g., phosphorus, arsenic, boron, etc.) in the surface of a semiconductor device for micro-contamination, doping, ion implantation, etc., to control or adjust the process parameters, thereby maintaining device/epitaxial stability. For example, during the epitaxy (epitaxiy) of silicon phosphide, quantitative analysis (qualification) of phosphorus is required.

One of the current quantitative analysis techniques is Atom probe analysis (Atom probe mobility) technique, but when some elements are analyzed quantitatively, the main signal source in the mass spectrum is overlapped by signals of multiple quanta of the same element, and the result will make the quantitative analysis result deviate from the actual value.

Disclosure of Invention

Embodiments of the present disclosure provide an atom probe analysis method, which is suitable for an electronic device having a processor. The method comprises the following steps: irradiating an atom probe including a test sample with a pulsed laser; analyzing ions ejected from the surface of the atom probe by using a mass spectrometer to obtain a mass spectrum, wherein the ions comprise a plurality of quantums of an element and have a plurality of valences; and normalizing the count value of the mass-to-charge ratio (mass-to-charge-ratio) corresponding to the ions with different valences in the mass spectrogram to obtain the proportion of the ions in each quantum, and correcting the quantitative result of the ions in each quantum.

An embodiment of the present disclosure provides an atom probe analysis device, which includes a connection device and a processor. The connecting device is used for connecting the pulse laser and the mass spectrometer. A processor is coupled to the connection device and configured to irradiate the atom probe including the test sample with a pulsed laser, analyze ions ejected from a surface of the atom probe with a mass spectrometer to obtain a mass spectrum, wherein the ions include multiple quanta of an element and have multiple valences, and then normalize count values of corresponding mass-to-charge ratios in the mass spectrum for ions of different valences of each quanta to obtain a proportion of ions of each quanta, and to correct a quantification result of the ions of each quanta.

An embodiment of the present disclosure provides a computer-readable recording medium for recording a program, the program being loaded by a processor to execute: irradiating an atom probe including a test sample with a pulsed laser; analyzing ions ejected from the surface of the atom probe by using a mass spectrometer to obtain a mass spectrum, wherein the ions comprise a plurality of quantums of an element and have a plurality of valences; and normalizing the count values of the mass-to-charge ratios corresponding to the ions with different valences in the mass spectrogram to obtain the proportion of the ions in each quantum, and correcting the quantitative result of the ions in each quantum.

Drawings

Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying drawing figures. It should be noted that, according to standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

Fig. 1 is a block diagram of an atom probe analysis apparatus according to an embodiment of the disclosure.

Fig. 2 is a flowchart illustrating an atom probe analysis method according to an embodiment of the disclosure.

Fig. 3 is a mass spectrum of phosphorus ions according to an embodiment of the disclosure.

Fig. 4 is a flowchart illustrating an atom probe analysis method according to an embodiment of the disclosure.

Fig. 5 is a graph comparing the quantitative analysis results according to the embodiment of the disclosure.

The reference numbers illustrate:

100: an atom probe analyzer;

102: a connecting device;

104: a storage medium;

106: a processor;

112: a pulsed laser;

114: a mass spectrometer;

300: mass spectrogram;

310: a peak value;

500: comparing the graphs;

510: a line segment;

s202 to S206, S402 to S412: and (5) carrying out the following steps.

Detailed Description

The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these components and arrangements are merely examples and are not intended to be limiting. For example, in the following description, the formation of a first feature over or on a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features such that the first and second features may not be in direct contact. Moreover, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

Furthermore, for ease of description, spatially relative terms such as "below …," "below …," "lower," "above …," "upper," and the like may be used herein to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

In order to increase the accuracy of the quantitative analysis of elements in the silicon phosphide epitaxy (epitaxiy) or other processes, the embodiment of the present disclosure is directed to the problem of signal overlap of a plurality of ions, and utilizes the counted value of the ions existing in the mass spectrum alone (i.e., the mass-to-charge ratio is not overlapped with other ions) to calculate the proportion of the ions of various quantums of a specific element (e.g., a single quantum, a double quantum, and a triple quantum), and applies the proportion to the counted value of the ions of the signal overlap to distinguish the counted value of the ions of each quantum. By performing deconvolution (deconvolution) on the interference (interference) in the mass spectrum, the accuracy of the quantitative analysis result can be increased. The disclosed embodiments further introduce an Artificial Intelligence (AI)/machine learning (machine learning) model into the atom probe analysis, so that fingerprints (finger prints) of each of the samples in the mass spectrum can be identified in-situ after the analysis is completed or during the execution period (runtime), and the quantification results of each of the samples can be corrected accordingly.

Fig. 1 is a block diagram of an atom probe analysis apparatus according to an embodiment of the disclosure. Referring to fig. 1, an atom probe analysis device 100 of the present embodiment includes a connection device 102, a storage medium 104, and a processor 106 connected to the connection device 102 and the storage medium 104.

In some embodiments, the atom probe analysis device 100 is externally connected to the pulse laser 112 and the mass spectrometer 114 via the linkage 102, and is configured to control the pulse laser 112 via the linkage 102 and acquire a mass spectrum from the mass spectrometer 114. The pulse laser 102 is, for example, a femtosecond (femtosecond) laser, and is not limited thereto. In some embodiments, the atom probe analysis device 100 can be disposed or integrated into the mass spectrometer 114, which is not limited herein. The atom probe analysis device 100 will be described in detail in the following description.

The connection device 102 is, for example, any wired interface or wireless interface compatible with the pulse laser 112 and the mass spectrometer 114, such as a Universal Serial Bus (USB), a firewire (firewire), a thunderbolt (thunderbolt), a universal asynchronous receiver/transmitter (UART), a Serial Peripheral Interface (SPI) bus, a wireless fidelity (WiFi), or a bluetooth, which is not limited herein.

The storage medium 104 may be any type of fixed or removable Random Access Memory (RAM), read-only memory (ROM), flash memory (flash memory), or the like, or any combination thereof. In the present embodiment, the storage medium 104 is used to store mass spectra acquired from the mass spectrometer 114 via the connection device 102 and record computer programs or instructions that can be accessed and executed by the processor 106.

The processor 106 is configured to execute instructions to perform the atom probe analysis methods of embodiments of the present disclosure. The processor 106 may be, for example, a Central Processing Unit (CPU), other programmable general purpose microprocessor or programmable special purpose microprocessor, a Digital Signal Processor (DSP), a programmable logic device (ASIC), a Programmable Logic Device (PLD), other similar devices, or a combination thereof, but the disclosure is not limited thereto.

The atom probe analysis device 100 is adapted to perform atom probe analysis methods according to some embodiments of the present disclosure. In detail, fig. 2 is a flowchart illustrating an atom probe analysis method according to an embodiment of the disclosure. Referring to fig. 1 and 2, the method of the present embodiment is applied to the atom probe analysis device 100 shown in fig. 1, and the detailed steps of the method of the present embodiment are described below with reference to various components in the atom probe analysis device 100 shown in fig. 1.

In step S202, the processor 106 of the atom probe analyzing apparatus 100 irradiates an atom probe including a test sample with the pulsed laser 112. The atom probe is, for example, a semiconductor device sample that is formed into a needle tip shape with a size suitable for analysis by a preparation method such as a polishing method, so that atoms on the surface of the probe are emitted by generating a field volatilization by irradiation of the pulse laser 102.

In step S204, the processor 106 analyzes the ions ejected from the atom probe surface using the mass spectrometer 114 to obtain a mass spectrum, wherein the ions include multiple quanta of a specific element and have multiple valences. Examples of the element include, but are not limited to, doping elements (dopant elements) such as phosphorus, arsenic, boron, titanium, and aluminum used in semiconductor manufacturing processes. Taking phosphorus as an example, the ions include, for example, a phosphorus monoliths P, a double monoliths P2, and a triple monoliths P3, each having, for example, three valencies, e.g., monoliths P including P +, P + +; double vector P2 includes P2+, P2+ +, P2+ + +; the three-component P3 includes P3+, P3+ +, P3+ + +. The mass spectrometer 114 analyzes the ions emitted from the surface of the atom probe to obtain a mass spectrum of ion signals with different valences including each quantum of the specific element.

For example, fig. 3 is a mass spectrum of phosphorus ions according to an embodiment of the disclosure. Referring to fig. 3, the horizontal axis of the mass-to-charge-state ratio (mass-to-charge-state ratio) of the mass spectrum 300 of the present embodiment is expressed in units of daltons (Da), and the vertical axis is expressed in units of counts and times. The curve in the mass spectrum 300 may be considered a fingerprint (fingerprint) of phosphorus, which includes a plurality of peaks, each peak being, for example, a single ion of a single valence corresponding to a single quantum of phosphorus, and possibly a different valence corresponding to multiple quantum of phosphorus. For example, the peak 310 with a mass-to-charge ratio of 31 Da is formed by overlapping signals of three phosphorus ions, P +, P2+ +, and P3+ + +.

In step S206, the processor 106 normalizes the count values of the mass-to-charge ratios corresponding to the ions of different valences in the mass spectrogram to obtain the proportions of the ions of the various quanta, and corrects the quantitative result of the ions of the various quanta.

In some embodiments, the processor 106 calculates the ratio of the ions of each volume using the count of the mass-to-charge ratios of the ions of each volume with different valences in the mass spectrum that do not overlap with the ions of other volumes, and then applies the ratio to the count of the mass-to-charge ratios of the ions of the overlapping volumes in the mass spectrum (e.g., the count of 31 Da for mass-to-charge ratios in fig. 3). The processor 106 multiplies the count value of the mass-to-charge ratio of the ions corresponding to the overlapped quanta in the mass spectrum by the ratio of each quanta and the corresponding atomic number to obtain the count value of the ions corresponding to the valence number of each quanta of the mass-to-charge ratio as the quantitative result of the ions of each quanta.

For example, the following table shows a plot of the counts for each mass-to-charge ratio in the mass spectrum of the phosphorus ions. As can be seen from Table I, the mass-to-charge ratios of the P +, P2+ +, and P3+ + + are all 31 Da, i.e., the signals (count values) of the P +, P2+ +, and P3+ + + overlap. This also makes it impossible to accurately calculate the actual values of the various quantum bodies of phosphorus from the count value of the mass-to-charge ratio of 31 Da.

Watch 1

Specifically, the total count value of the mass-to-charge ratio 31 Da is equal to X3+ Y3+ Z3, so that the count values cannot be known as X3, Y3 and Z3, and the actual count value should be X3+ 2X Y3+ 3X Z3. If the count is considered as X3+ Y3+ Z3, the actual magnitudes of X3, Y3, and Z3 are underestimated.

In some embodiments, the ratio of the ions of different masses of phosphorus can be calculated by using the above-mentioned count value of mass-to-charge ratios not including a plurality of phosphorus ions. For example, the ratio of the phosphorus ions P + to the count value of 31 Da can be calculated from the ratio of the phosphorus ions P + +, P + + + to all the phosphorus ions (including P + +, P + + +, P2+, P2+ + +, P3+, and P3+ +, but not including the ratio of the overlapping signals P +, P2+ +, and P3+ +). By analogy, the proportions of the phosphorus ions P +, P2+ +, P3+ + + in the count value of the mass-to-charge ratio 31 Da RX3, RY3 and RZ3 can be obtained as follows:

RX3＝(X1+X2)/(X1+X2+Y1+Y2+Z1+Z2)；

RY3＝(Y1+Y2)/(X1+X2+Y1+Y2+Z1+Z2)；

RZ3＝(Z1+Z2)/(X1+X2+Y1+Y2+Z1+Z2)。

wherein, the counting values X3, Y3 and Z3 of the phosphorus ions P +, P2+ +, P3+ + + at the mass-to-charge ratio of 31 Da can be obtained by multiplying the above ratio by the counting value of the mass-to-charge ratio of 31 Da and the corresponding atomic number, as follows:

X3＝P*RX3*1；

Y3＝P*RY3*2；

X3＝P*RZ3*3。

by the deconvolution operation performed on the interference in the mass spectrum, the actual magnitude of the ions of each quantum can be distinguished from the count value of the mass (mass-to-charge ratio) of the signal overlap, thereby increasing the accuracy of the quantitative analysis result.

In some embodiments, the present disclosure may further feed the corrected quantitative result of each quantum ion back to the power supply of the pulsed laser 112 to adjust the charge-state-ratio (CSR) so that the ratio of ions with different valence numbers of each quantum is kept constant. For example, the ratio of the ions P +, P + + + of the phosphorus single quantum P is kept constant for the subsequent analysis.

In some embodiments, the disclosed embodiments may also introduce Artificial Intelligence (AI)/machine learning models into the atom probe analysis, and may identify fingerprints of each of the test samples in the mass spectrum in situ after the analysis is completed or during execution, and accordingly correct the quantitative results of each of the test samples.

In detail, fig. 4 is a flowchart illustrating an atom probe analysis method according to an embodiment of the disclosure. Referring to fig. 1 and 4, the method of the present embodiment is applied to the atom probe analysis device 100 shown in fig. 1, and the detailed steps of the method of the present embodiment are described below with reference to various components in the atom probe analysis device 100 shown in fig. 1.

In step S402, a learning model is built by the processor 106 of the atom probe analysis device 100 using a machine learning algorithm. In some embodiments, the processor 106, for example, creates a Convolutional Neural Network (CNN) model, which includes a plurality of input layers, a plurality of convolutional layers and an output layer, and learns initial conditions (starting conditions) and analysis results for analyzing the test sample according to the embodiment of the present disclosure to find an optimal filter for identifying the fingerprint of the ions of the test sample.

In step S404, the processor 106 of the atom probe analyzing apparatus 100 irradiates an atom probe including a test sample with the pulsed laser 112. In step S406, the processor 106 analyzes the ions ejected from the atom probe surface using the mass spectrometer 114 to obtain a mass spectrum, wherein the ions include multiple quanta of a specific element and have multiple valences. In step S408, the processor 106 normalizes the count values of the mass-to-charge ratios corresponding to the ions of different valences in the mass spectrogram to obtain the proportions of the ions of the various quanta, and corrects the quantitative result of the ions of the various quanta. The steps S404 to S408 are the same as or similar to the steps S202 to S206 in the embodiment of fig. 2, and therefore the detailed description thereof is omitted here.

In step S410, the processor 106 learns the relationship between the initial conditions at the time of analysis of the test sample and the quantitative results of the ions of the respective volumes obtained by the analysis using the learning model. The initial conditions include, but are not limited to, Pulse Laser Energy (PLE) of the pulse laser 112, a charge state ratio, a voltage applied to the atom probe, a temperature of the atom probe, a detection rate, or a frequency.

In step S412, the processor 106 identifies a fingerprint (fingerprint) of each of the volumes of the test sample in the mass spectrum during execution (runtime) using the trained learning model, and corrects the quantitative result of each of the volumes accordingly.

The disclosed embodiments train the coefficient values of each layer in a learning model by using a large amount of test data (including initial conditions and analysis results) as inputs and outputs of the learning model, so that the learning model adaptively identifies fingerprints in a received main range file (mass spectrogram) and automatically outputs or generates the proportions and quantitative results of each component of a specific component even if process conditions or parameters of a tested sample change during analysis. Therefore, the accuracy of element quantitative analysis can be increased, and the manufacturing process can be improved.

Fig. 5 is a graph comparing the quantitative analysis results according to the embodiment of the disclosure. Referring to fig. 5, the horizontal axis of the comparison graph 500 of the present embodiment is the state of charge ratio (CSR) of silicon, and the vertical axis is the phosphorus ion concentration in percentage (%). The triangular data points are the distribution of the quantitative results obtained without the atom probe analysis method of the embodiments of the present disclosure, and the diamond data points are the distribution of the quantitative results obtained with the atom probe analysis method of the embodiments of the present disclosure. Line 510 represents the concentration of phosphorus ions analyzed by a Secondary Ion Mass Spectrometer (SIMS). Comparing the data point distributions before and after the atom probe analysis method of the disclosed embodiment, an improvement in the quantitative accuracy of about 17.6% (reducing the difference from the SIMS result from 18.7% to 1.1%) was obtained, and the quantitative result also approached the target concentration provided by line 510. It can be demonstrated that the atomic probe analysis method of the present embodiment can correct the deviation of the quantitative analysis result caused by the signal overlap, and increase the accuracy of the quantitative analysis result.

By the method, the present disclosure provides the following advantages: (1) calculating interference quality (mass-to-charge ratio) and feeding back to the overlapped quality and power supply to improve data quality; (2) using fingerprint identification element in-situ and correcting deviation; and (3) increasing the accuracy of element quantitative analysis, thereby improving the manufacturing process.

According to some embodiments, an atom probe analysis method is provided for use in an electronic device having a processor. The method comprises the following steps: irradiating an atom probe including a test sample with a pulsed laser; analyzing ions ejected from the surface of the atom probe by using a mass spectrometer to obtain a mass spectrum, wherein the ions comprise a plurality of quantums of an element and have a plurality of valences; and normalizing the count values of the mass-to-charge ratios corresponding to the ions with different valences in the mass spectrogram to obtain the proportion of the ions in each quantum, and correcting the quantitative result of the ions in each quantum.

According to some embodiments, an atom probe analysis device is provided that includes a connection device and a processor. The connecting device is used for connecting the pulse laser and the mass spectrometer. A processor is coupled to the connection device and configured to irradiate the atom probe including the test sample with a pulsed laser, analyze ions ejected from a surface of the atom probe with a mass spectrometer to obtain a mass spectrum, wherein the ions include multiple quanta of an element and have multiple valences, and then normalize count values of corresponding mass-to-charge ratios in the mass spectrum for ions of different valences of each quanta to obtain a proportion of ions of each quanta, and to correct a quantification result of the ions of each quanta.

According to some embodiments, there is provided a computer readable recording medium recording a program, the program being loaded by a processor to perform: irradiating an atom probe including a test sample with a pulsed laser; analyzing ions ejected from the surface of the atom probe by using a mass spectrometer to obtain a mass spectrum, wherein the ions comprise a plurality of quantums of an element and have a plurality of valences; and normalizing the count values of the mass-to-charge ratios corresponding to the ions with different valences in the mass spectrogram to obtain the proportion of the ions in each quantum, and correcting the quantitative result of the ions in each quantum.

The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.