阅读说明：本技术 原子腔结构及其制作方法 (Atomic cavity structure and manufacturing method thereof ) 是由 姜春宇 王逸群 *** 翟豪 于 2019-03-18 设计创作，主要内容包括：本发明公开了一种原子腔结构,所述原子腔结构包括：基片,具有封闭的腔；至少三组反射结构,所述反射结构设置于所述腔的内壁上,所述反射结构至少用于对射入所述腔内的相应的第一光线进行反射,从而使所有的所述第一光线与射入所述腔内的第二光线在所述腔内正交后射出所述腔外。本发明还提供了上述原子腔结构的制作方法。本发明的原子腔结构可应用在原子核磁共振陀螺仪、原子磁强计等原子物理系统中。(The invention discloses an atomic cavity structure, which comprises: a substrate having an enclosed cavity; at least three groups of reflecting structures, the reflecting structure set up in on the inner wall in chamber, the reflecting structure is used for at least to penetrating into corresponding first light of intracavity reflects to make all first light and penetrate into second light in the intracavity jets out after the intracavity quadrature outside the chamber. The invention also provides a manufacturing method of the atom cavity structure. The atomic cavity structure can be applied to atomic physical systems such as an atomic nuclear magnetic resonance gyroscope, an atomic magnetometer and the like.)

1. An atom cavity structure, comprising:

a substrate (1) having a closed cavity (A);

at least three sets of reflection configuration (2), reflection configuration (2) set up in on the inner wall of chamber (A), reflection configuration (2) are used for at least reflecting incidenting into corresponding first light in chamber (A), thereby make all first light with incide into second light in the chamber (A) is in jet out after the quadrature in chamber (A) outside chamber (A).

2. The atomic cavity structure according to claim 1, characterized in that the reflecting structure (2) comprises a first reflecting surface (21) and a second reflecting surface (22) opposite to each other, the first light ray being orthogonal to the second light ray in the optical path reflected by the first reflecting surface (21) to the second reflecting surface (22).

3. The atomic cavity structure according to claim 2, characterized in that said substrate (1) comprises: a silicon wafer (11), a first light-transmitting sheet (12) and a second light-transmitting sheet (13);

the silicon wafer (11) comprises a first surface (11a) and a second surface (11b) which are opposite and parallel and a through hole (11c) penetrating through the first surface (11a) and the second surface (11b), the first light-transmitting sheet (12) is arranged on the first surface (11a) and closes the opening of the through hole (11c) on the first surface (11a), and the second light-transmitting sheet (13) is arranged on the second surface (11b) and closes the opening of the through hole (11c) on the second surface (11b), so that the closed cavity (A) is formed.

4. The atomic cavity structure according to claim 3, characterized in that the first reflecting surface (21) and the second reflecting surface (22) are parallel, and the distance between the first reflecting surface (21) and the second reflecting surface (22) is represented by the formula:

wherein H is the distance between the first reflective surface (21) and the second reflective surface (22), W is the distance between the incident light segment and the emergent light segment of the first light ray, and θ is the acute angle between the first reflective surface (21) and the first surface (11a) or the acute angle between the second reflective surface (22) and the second surface (11 b);

or the first reflecting surface (21) and the second reflecting surface (22) extend to intersect perpendicularly.

5. The atomic cavity structure according to claim 2, characterized in that said substrate (1) comprises: a silicon wafer (11) and a third light transmitting sheet (14);

the silicon chip (11) comprises a first surface (11a) and a second surface (11b) which are opposite and parallel and a groove (11d), and the third light-transmitting sheet (14) is arranged on the second surface (11b) and closes the opening of the groove (11d) on the second surface (11b), so that the closed cavity (A) is formed.

6. The atomic cavity structure according to claim 5, characterized in that said first reflecting surface (21) and said second reflecting surface (22) are directed towards said third light-transmitting sheet (14); wherein the first reflecting surface (21) and the second reflecting surface (22) extend to intersect perpendicularly.

7. The atomic cavity structure according to any of claims 1 to 6, characterized in that the direction of the first and second light rays entering or exiting the cavity (A) is perpendicular to the substrate (1).

8. A method for fabricating an atomic cavity structure, the method comprising:

forming a through hole (11c) in a silicon wafer (11) through a first surface (11a) and a second surface (11b), the first surface (11a) and the second surface (11b) being opposite and parallel;

providing a first light-transmitting sheet (12) on the first surface (11a) and closing the opening of the through hole (11c) on the first surface (11 a);

-fitting a plurality of reflecting structures (2) on the inner wall of said through hole (11 c);

injecting a specific substance into the through hole (11c) through an opening of the through hole (11c) on the second surface (11 b);

and arranging a second light-transmitting sheet (13) on the second surface (11b) and closing the opening of the through hole (11c) on the second surface (11 b).

9. Method of manufacturing according to claim 8, wherein the method of assembling the reflecting structure (2) on the inner wall of the through hole (11c) comprises:

forming a first inclined surface (a1) on the first reflection block (a), and forming a second inclined surface (b1) on the second reflection block (b);

providing a reflective film layer on the first inclined surface (a1) and the second inclined surface (b1) to form a first reflective surface (21) and a second reflective surface (22), respectively;

fitting the first reflection block (a) and the second reflection block (b) to an inner wall of the through-hole (11c) such that the first slope (a1) and the second slope (b1) are opposite, thereby forming the reflection structure (2).

10. A method for fabricating an atomic cavity structure, the method comprising:

providing a silicon wafer (11), wherein the silicon wafer (11) comprises a first surface (11a) and a second surface (11b) which are opposite and parallel;

forming a groove (11d) on the second surface (11b) of the silicon wafer (11);

fitting a plurality of reflecting structures (2) on the inner wall of the recess (11 d);

injecting a specific substance into the groove (11d) through an opening of the groove (11d) on the second surface (11 b);

and arranging a third light-transmitting sheet (14) on the second surface (11b) and closing the opening of the groove (11d) on the second surface (11 b).

Technical Field

The invention relates to the field of atomic physical devices, in particular to an atomic cavity structure and a manufacturing method thereof.

Background

With the development of micro-nano processing technology in recent years, the miniaturization, low power consumption and small volume atomic device based on Micro Electro Mechanical System (MEMS) technology also takes great progress. The typical atomic physical systems such as atomic nuclear magnetic resonance gyroscopes, atomic frequency standards (atomic clocks), atomic magnetometers and the like have particularly prominent effects in the fields of positioning, navigation, time service and the like, and have vital strategic significance in various aspects such as national defense, science and technology, economy and the like.

Atomic devices such as atomic nuclear magnetic resonance gyroscopes, atomic clocks, atomic magnetometers, and the like are relatively complex systems, wherein an atomic cavity is a core component thereof. The traditional glass bubble type atomic cavity can be made into a chip by utilizing a Micro Electro Mechanical System (MEMS) manufacturing technology, so that the chips of complex atomic systems such as an atomic nuclear magnetic resonance gyroscope, an atomic clock, an atomic magnetometer and the like are realized.

At present, at least one path of laser is needed to interact with atoms in atomic devices such as chip atomic clocks, chip-level atomic gyroscopes based on nuclear magnetic resonance principle, atomic magnetometers and the like. The structure of the atomic cavity prepared by the MEMS process is usually a sandwich structure of a silicon wafer and a glass sheet, and the structure can only realize the interaction between laser and atoms in the cavity. The invention provides another structure on the basis of the structure, wherein an inclined plane with an included angle of 54.7 degrees is formed on the side wall of silicon for laser reflection by a wet etching method on the middle layer of silicon, an atomic cavity of the structure can realize the interaction (optical pumping or detection) of multi-directional laser and atoms in the cavity, but the structure can realize incidence and emergence only by angle compensation of an additional prism or a grating on the incident laser, the application structure in physical systems such as an atomic nuclear magnetic resonance gyroscope, an atomic magnetometer and the like is more complex, in addition, the invention also provides an atomic cavity of the structure, the middle layer is glass, the upper layer and the lower layer are silicon, the atomic cavity of the structure can realize the vertical incidence of the laser in two directions but cannot realize the actions of the laser and the atoms in other directions, and in order to solve the problems, the invention provides a technical scheme which can realize the vertical incidence of the laser without a specific angle compensation prism or grating, And the interaction (optical pumping and detection) of multi-directional laser and atoms can be realized.

Disclosure of Invention

In order to achieve the purpose, the invention adopts the following technical scheme:

an atomic cavity structure, comprising:

a substrate having an enclosed cavity;

at least three groups of reflecting structures, the reflecting structure set up in on the inner wall in chamber, the reflecting structure is used for at least to penetrating into corresponding first light of intracavity reflects to make all first light and penetrate into second light in the intracavity jets out after the intracavity quadrature outside the chamber.

Preferably, the reflection structure includes a first reflection surface and a second reflection surface opposite to each other, and the first light ray is orthogonal to the second light ray in an optical path reflected by the first reflection surface to the second reflection surface.

Preferably, the substrate comprises: the light-transmitting device comprises a silicon chip, a first light-transmitting piece and a second light-transmitting piece;

the silicon chip comprises a first surface and a second surface which are opposite and parallel and a through hole which penetrates through the first surface and the second surface, the first light-transmitting sheet is arranged on the first surface and closes an opening of the through hole on the first surface, and the second light-transmitting sheet is arranged on the second surface and closes an opening of the through hole on the second surface, so that the closed cavity is formed.

Preferably, the first reflecting surface and the second reflecting surface are parallel, and the distance between the first reflecting surface and the second reflecting surface is represented by the following formula:

wherein H is a distance between the first reflective surface and the second reflective surface, W is a distance between an incident light segment and an emergent light segment of the first light ray, and θ is an acute angle between the first reflective surface and the first surface or an acute angle between the second reflective surface and the second surface;

or the first reflecting surface and the second reflecting surface extend to intersect perpendicularly.

Preferably, the substrate comprises: a silicon wafer and a third light-transmitting sheet;

the silicon chip comprises a first surface, a second surface and a groove which are opposite and parallel, and the third light-transmitting piece is arranged on the second surface and closes the opening of the groove on the second surface, so that the closed cavity is formed.

Preferably, the first reflective surface and the second reflective surface face the third light-transmitting sheet; wherein the first and second reflective surfaces extend to intersect perpendicularly.

Preferably, the direction in which the first light ray and the second light ray enter or exit the cavity is perpendicular to the substrate.

The invention also provides a manufacturing method of the atomic cavity structure, which comprises the following steps:

forming a through hole penetrating through a first surface and a second surface in a silicon wafer, wherein the first surface and the second surface are opposite and parallel;

arranging a first light-transmitting sheet on the first surface and closing the opening of the through hole on the first surface;

assembling a plurality of reflecting structures on the inner wall of the through hole;

injecting a specific substance into the through hole through the opening of the through hole on the second surface;

and arranging a second light-transmitting sheet on the second surface and closing the opening of the through hole on the second surface.

Preferably, the method of assembling the reflecting structure on the inner wall of the through hole includes:

forming a first inclined plane on the first reflecting block and a second inclined plane on the second reflecting block;

arranging a reflection film layer on the first inclined plane and the second inclined plane to form a first reflection surface and a second reflection surface respectively;

fitting the first reflection block and the second reflection block to an inner wall of the through hole such that the first slope and the second slope are opposite to each other, thereby forming the reflection structure.

The invention also provides a manufacturing method of the atomic cavity structure, which comprises the following steps:

providing a silicon wafer, wherein the silicon wafer comprises a first surface and a second surface which are opposite and parallel;

forming a groove on the second surface of the silicon wafer;

assembling a plurality of reflecting structures on the inner wall of the groove;

injecting a specific substance into the groove through an opening of the groove on the second surface;

and arranging a third light-transmitting sheet on the second surface and closing the opening of the groove on the second surface.

Compared with the prior art, the atomic cavity structure can realize the vertical incidence and the emission of multi-path laser, can realize the interaction between multi-directional laser and atoms, and provides more degrees of freedom and application space for the chip formation of atomic physical systems such as an atomic nuclear magnetic resonance gyroscope, an atomic magnetometer and the like.

Drawings

FIG. 1 is a schematic diagram of the optical path of the atom chamber of the present invention

FIG. 2 is a sectional view of the atom chamber of example 1;

FIG. 3 is a schematic structural view of the atom chamber of example 1;

FIG. 4 is a diagram showing the optical path of a ray α in the atom cavity of example 1;

FIG. 5 is a sectional view of the atom cavity of example 2;

FIG. 6 is a schematic view of the structure of the atom cavity of example 2;

FIGS. 7 to 10 are flow charts of the atomic chamber according to example 1;

fig. 11 to 13 are flow charts of the manufacturing of the atom cavity of embodiment 2.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described in detail below with reference to the accompanying drawings. Examples of these preferred embodiments are illustrated in the accompanying drawings. The embodiments of the invention shown in the drawings and described in accordance with the drawings are exemplary only, and the invention is not limited to these embodiments.

It should be noted that, in order to avoid obscuring the present invention with unnecessary details, only the structures and/or processing steps closely related to the scheme according to the present invention are shown in the drawings, and other details not so relevant to the present invention are omitted.

The present invention provides an atomic cavity structure, as shown in fig. 1 (the internal structure of the cavity a is directly exposed in the figure, and other details are omitted), the atomic cavity structure of the present invention includes a transparent substrate 1, and the substrate 1 includes a closed cavity a for containing a specific substance. The specific substance filled in the cavity a includes a metal element and a buffer gas. The metal element may be alkali metal rubidium (Rb) or cesium (Cs) or other substance capable of realizing optical pumping, and the buffer gas may be nitrogen (N)₂) Argon (Ar), xenon (Xe) or methane (CH)₄) And the like. At least three groups of reflecting structures 2 are arranged on the inner wall of the cavity A, and each group of reflecting structures 2 comprises two oppositely arranged reflecting mirrors.

The reflecting structure 2 is at least used for reflecting the corresponding first light rays emitted into the cavity a, so that all the first light rays and the second light rays emitted into the cavity a are orthogonal in the cavity a and then are emitted out of the cavity a. The plurality of first light rays are used as detection light rays, are orthogonal to the second light rays in the cavity A and have a detection effect on atoms in the cavity A. The second light is used as pumping light to pump atoms of the metal elements from a ground state to a spin polaron energy state, so that the atoms realize macroscopic polarization which tends to be consistent. The first light can realize the detection of multiple groups and/or multiple physical quantities (such as angles, magnetic fields and the like) by combining the action of the external magnetic field on the atoms in the cavity. Wherein the second light ray may also be reflected within the cavity a by the reflecting structure 2 and be orthogonal to the first light ray also reflected by the reflecting structure 2.

As shown in fig. 1, the internal structure of the cavity a is directly exposed in order to more clearly express the reflection path of light. Light ray alpha (first light ray) enters the cavity A from one surface of the substrate 1 and is emitted from the other surface of the substrate 1 after being reflected by the reflecting structure 2, light ray beta (first light ray) enters the cavity A from one surface of the substrate 1 and is emitted from the same surface of the substrate 1 after being reflected by the reflecting structure 2, light ray gamma (first light ray) enters the cavity A from one surface of the substrate 1 and is also emitted from the same surface of the substrate 1 after being reflected by the reflecting structure 2, and light ray (second light ray) is used as pump light. As can be seen from fig. 1, the light ray α, the light ray β and the light ray γ are orthogonal to the light ray at a common intersection point in the optical path between the two mirrors of the reflecting structure 2. This common intersection point is achieved by adjusting the spacing between the mirrors of the reflecting structure 2 or adjusting the tilt angle of the mirrors.

As can be seen from fig. 1, the first light ray intersects (not necessarily orthogonally) another first light ray at the same time of being orthogonal to the second light ray under the action of the reflection structure 2. I.e. the first ray intersects another of the first rays in the optical path reflected by the first reflecting surface 21 to the second reflecting surface 22.

Therefore, based on the design concept, multiple groups (at least three groups) of reflecting mechanisms 2 can be arranged in the cavity A of the atomic cavity structure, so that the interaction between multi-directional laser and atoms can be realized, and more degrees of freedom and application spaces are provided for the chip formation of atomic physical systems such as an atomic nuclear magnetic resonance gyroscope, an atomic magnetometer and the like.