阅读说明：本技术 一种全固态拉曼倍频深红色激光器及激光产生方法 (All-solid-state Raman frequency-doubling deep red laser and laser generation method ) 是由 代世波 赵辉 朱思祁 尹浩 李�真 陈振强 于 2020-07-30 设计创作，主要内容包括：本发明公开了一种全固态拉曼倍频深红色激光器及激光产生方法,该激光器包括：泵浦单元、输入腔镜(4)、激光晶体(5)、偏振片(7)、第一插入镜(8)、拉曼晶体(9)、第二插入镜(10)、非线性光学晶体(11)和输出腔镜(12),其中输入腔镜(4)和输出腔镜(12)构成基频光的谐振腔,第一插入镜(8)和输出腔镜(12)构成拉曼光的谐振腔；本发明的深红色激光器具有输出功率高、光束质量好、结构简单、性能稳定、成本低廉等诸多优点,在激光显示、生物光子学、荧光成像、光动力疗法等领域有重要应用。(The invention discloses an all-solid-state Raman frequency-doubling deep red laser and a laser generating method, wherein the laser comprises: the Raman laser comprises a pumping unit, an input cavity mirror (4), a laser crystal (5), a polarizing plate (7), a first insert mirror (8), a Raman crystal (9), a second insert mirror (10), a nonlinear optical crystal (11) and an output cavity mirror (12), wherein the input cavity mirror (4) and the output cavity mirror (12) form a resonant cavity of fundamental frequency light, and the first insert mirror (8) and the output cavity mirror (12) form a resonant cavity of Raman light; the deep red laser has the advantages of high output power, good beam quality, simple structure, stable performance, low cost and the like, and has important application in the fields of laser display, biophotonics, fluorescence imaging, photodynamic therapy and the like.)

1. An all-solid-state Raman frequency-doubled deep red laser, comprising: the Raman laser comprises a pumping unit, an input cavity mirror (4), a laser crystal (5), a polarizing plate (7), a first insert mirror (8), a Raman crystal (9), a second insert mirror (10), a nonlinear optical crystal (11) and an output cavity mirror (12), wherein the input cavity mirror (4) and the output cavity mirror (12) form a resonant cavity of fundamental frequency light, and the first insert mirror (8) and the output cavity mirror (12) form a resonant cavity of Raman light;

the input cavity mirror (4), the laser crystal (5), the polaroid (7), the first insert mirror (8), the Raman crystal (9), the second insert mirror (10), the nonlinear optical crystal (11) and the output cavity mirror (12) are sequentially and horizontally arranged, and the pumping unit is arranged in front of the input cavity mirror (4) or arranged on the side face of the laser crystal (5).

2. The all-solid-state raman frequency-doubled deep red laser according to claim 1, wherein the pumping unit comprises: the device comprises a pumping source (1), a collimating lens (2) and a focusing lens (3);

the pumping source (1), the collimating lens (2), the focusing lens (3) and the input cavity mirror (4) are sequentially and horizontally arranged.

3. The all-solid-state raman frequency-doubled deep red laser according to claim 1, wherein the pumping unit comprises: a pump source (1);

the pumping source (1) is arranged on the side surface of the laser crystal (5).

4. The all-solid-state raman frequency-doubled deep red laser according to claim 2 or 3, characterized in that the pump source (1) is a 797nm, 808nm or 880nm semiconductor laser.

5. The all-solid-state raman frequency-doubled deep red laser according to claim 1, further comprising: a Q-switching device (6);

the Q-switching device (6) is arranged between the laser crystal (5) and the polaroid (7);

the Q-switch (6) is any one of an acousto-optic Q switch, an electro-optic Q switch and V: YAG.

6. The all-solid-state raman frequency-doubled deep red laser according to claim 1, characterized in that the laser crystal (5) is a neodymium-doped fluoride crystal with weak thermal lens effect and long fluorescence lifetime.

7. The all-solid-state raman frequency-doubled deep red laser according to claim 1, characterized in that the raman crystal (9) comprises YVO₄、GdVO₄、KGW、BaWO₄、SrWO₄、Diamond、BaNO₃Any one of KTP and KTA.

8. The all-solid-state raman frequency-doubled deep red laser according to claim 1, characterized in that the nonlinear optical crystal (11) comprises any one of LBO, CLBO, CBO, BBO, BIBO, KTP, KTA, YCOB, gdcoob.

9. A method for generating full-solid-state Raman frequency-doubling deep red laser is characterized by comprising the following steps: pump light output by a pump source (1) sequentially passes through a collimating lens (2), a focusing lens (3) and an input cavity mirror (4) and then is injected into a laser crystal (5) to generate 1.3-micron-waveband base frequency laser, the base frequency laser sequentially passes through a Q-switching device (6), a polarizing plate (7) and a first insertion mirror (8) and then is injected into a Raman crystal (9) to generate 1.5-micron-waveband Raman laser, the Raman laser passes through a second insertion mirror (10) and then is subjected to frequency doubling in a nonlinear optical crystal (11) to generate crimson laser, and finally the crimson laser is output through an output cavity mirror (12).

10. A method for generating all-solid-state Raman frequency-doubled deep red laser is characterized in that a pumping source (1) generates 1.3-micron-waveband base frequency laser from a side pumping laser crystal (5), the base frequency laser is injected into a Raman crystal (9) through a Q-switching device (6), a polaroid (7) and a first insert mirror (8) in sequence to generate 1.5-micron-waveband Raman laser, the Raman laser generates deep red laser in a nonlinear optical crystal (11) through frequency doubling after passing through a second insert mirror (10), and finally the deep red laser is output through an output cavity mirror (12).

Technical Field

The invention relates to the technical field of solid laser, in particular to an all-solid-state Raman frequency-doubling deep red laser and a laser generation method.

Background

The deep red laser with the wavelength of about 0.75 micrometer has very low absorption efficiency on water, blood and hemoglobin and also has weak scattering effect in dermal tissue, and the characteristics enable the deep red laser to have larger penetration depth in biological tissue, so the deep red laser has important application value in the fields of fluorescence imaging, photodynamic therapy, stimulated emission depletion microscope and the like.

At present, the method of obtaining the deep red laser mainly includes a titanium sapphire laser, a emerald sapphire laser, a vertical cavity surface emitting laser, and a frequency doubling vertical cavity surface emitting laser. Titanium jewel laser and emerald jewel laser develop relatively more maturely, have obtained the dark red laser output of high power high beam quality at present, but its pumping source often has the problem such as the system is complicated, bulky, with high costs. In recent years, the vertical cavity surface emitting laser has been rapidly developed, and continuous deep red laser output above watt level has been realized by the vertical cavity surface emitting laser and the frequency doubling vertical cavity surface emitting laser, however, the output power of the deep red laser is still greatly limited due to the lack of high-performance semiconductor compound materials in the wave bands of 0.75 micron and 1.4 micron. Therefore, it is necessary to develop a deep red laser with high output power, good beam quality, compact structure, stable performance and low cost.

Disclosure of Invention

The invention aims to overcome the defects of the prior art and provides an all-solid-state Raman frequency doubling deep red laser with high output power, compact structure and low cost and a laser generation method.

The purpose of the invention is realized by the following technical scheme:

an all-solid-state raman frequency-doubled deep red laser comprising: the Raman laser comprises a pumping unit, an input cavity mirror (4), a laser crystal (5), a polarizing plate (7), a first insert mirror (8), a Raman crystal (9), a second insert mirror (10), a nonlinear optical crystal (11) and an output cavity mirror (12), wherein the input cavity mirror (4) and the output cavity mirror (12) form a resonant cavity of fundamental frequency light, and the first insert mirror (8) and the output cavity mirror (12) form a resonant cavity of Raman light; the input cavity mirror (4), the laser crystal (5), the polaroid (7), the first insert mirror (8), the Raman crystal (9), the second insert mirror (10), the nonlinear optical crystal (11) and the output cavity mirror (12) are sequentially and horizontally arranged, and the pumping unit is arranged in front of the input cavity mirror (4) or arranged on the side face of the laser crystal (5).

Preferably, the pumping unit includes: the device comprises a pumping source (1), a collimating lens (2) and a focusing lens (3); the pumping source (1), the collimating lens (2), the focusing lens (3) and the input cavity mirror (4) are sequentially and horizontally arranged.

Preferably, the pumping unit includes: a pump source (1); the pumping source (1) is arranged on the side surface of the laser crystal (5).

Preferably, the pump source (1) is a 797nm, 808nm or 880nm semiconductor laser.

Preferably, the laser further comprises: a Q-switching device (6); the Q-switching device (6) is arranged between the laser crystal (5) and the polaroid (7); the Q-switch (6) is any one of an acousto-optic Q switch, an electro-optic Q switch and V: YAG.

Preferably, the laser crystal (5) is a neodymium-doped fluoride crystal with weak thermal lens effect and long fluorescence lifetime.

Preferably, the Raman crystal (9) comprises YVO₄、GdVO₄、KGW、BaWO₄、SrWO₄、Diamond、BaNO₃Any one of KTP and KTA.

Preferably, the nonlinear optical crystal (11) includes any one of LBO, CLBO, CBO, BBO, BIBO, KTP, KTA, YCOB, gdcoob.

A method for generating full-solid-state Raman frequency-doubling deep red laser comprises the following steps: pump light output by a pump source (1) sequentially passes through a collimating lens (2), a focusing lens (3) and an input cavity mirror (4) and then is injected into a laser crystal (5) to generate 1.3-micron-waveband base frequency laser, the base frequency laser sequentially passes through a Q-switching device (6), a polarizing plate (7) and a first insertion mirror (8) and then is injected into a Raman crystal (9) to generate 1.5-micron-waveband Raman laser, the Raman laser passes through a second insertion mirror (10) and then is subjected to frequency doubling in a nonlinear optical crystal (11) to generate crimson laser, and finally the crimson laser is output through an output cavity mirror (12).

A pumping source (1) pumps a laser crystal (5) from the side to generate 1.3 micron-band fundamental frequency laser, the fundamental frequency laser is injected into a Raman crystal (9) through a Q-switching device (6), a polaroid (7) and a first insert mirror (8) in sequence to generate 1.5 micron-band Raman laser, the Raman laser generates deep red laser in a nonlinear optical crystal (11) through frequency doubling after passing through a second insert mirror (10), and finally the deep red laser is output through an output cavity mirror (12).

Compared with the prior art, the invention has the following advantages:

1. the input cavity mirror and the output cavity mirror form a resonant cavity of fundamental frequency light, the first insert mirror and the output cavity mirror form a resonant cavity of Raman light, the laser crystal generates fundamental frequency laser of 1.3 micron wave band, the fundamental frequency laser is injected into the Raman crystal through the Q-switching device, the polaroid and the first insert mirror in sequence to generate Raman laser of 1.5 micron wave band, the Raman laser generates deep red laser in the nonlinear optical crystal through frequency doubling after passing through the second insert mirror.

2. The invention adopts mature and commercialized 797nm, 808nm or 880nm semiconductor lasers as pumping sources, thereby greatly reducing the volume and the cost of the pumping sources.

3. The neodymium-doped fluoride crystal adopted by the invention has weaker thermal lens effect and longer fluorescence life, and is beneficial to generating deep red pulse laser with high average power and high peak power.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this application, illustrate embodiments of the invention and, together with the description, serve to explain the invention and not to limit the invention. In the drawings:

fig. 1 is a schematic diagram of an optical path in patent embodiment 1 of the present invention.

Fig. 2 is a schematic diagram of the optical path of patent embodiment 2 of the present invention.

Fig. 3 is a schematic diagram of the optical path of patent embodiment 3 of the present invention.

Detailed Description

The invention is further illustrated by the following figures and examples.