Conductive beam optics for particle reduction in ion implanters
阅读说明:本技术 减少离子植入机中粒子的导电束光学器件 (Conductive beam optics for particle reduction in ion implanters ) 是由 常胜武 法兰克·辛克莱 亚历山大·利坎斯奇 克里斯多夫·坎贝尔 罗伯特·C·林德柏格 于 2019-01-22 设计创作,主要内容包括:本文提供减少离子植入机中粒子的方法。静电过滤器可包括壳体及位于壳体内的多个导电束光学器件。导电束光学器件围绕朝晶片引导的离子束线排列,且可包括靠近壳体的入口孔的入口孔电极。导电束光学器件还可包括沿着离子束线位于入口孔电极的下游的高能电极以及位于高能电极的下游的接地电极。高能电极被定位成比入口电极及接地电极更远离离子束线,从而使得高能电极在物理上被阻挡以免受从晶片返回的背溅射材料的包络撞击。静电过滤器还可包括用于独立地向导电束光学器件中的每一者递送电压及电流的电气系统。(Methods of reducing particles in an ion implanter are provided herein. The electrostatic filter may include a housing and a plurality of conductive beam optics positioned within the housing. The beam optics may be arranged around a beam line directed towards the wafer and may include an entrance aperture electrode proximate the entrance aperture of the housing. The conducting beam optics may further comprise a high energy electrode located downstream of the entrance aperture electrode along the ion beam line and a ground electrode located downstream of the high energy electrode. The high energy electrode is positioned further away from the ion beam line than the entrance and ground electrodes so that the high energy electrode is physically blocked from being struck by the envelope of back sputtered material returning from the wafer. The electrostatic filter may also include an electrical system for independently delivering voltage and current to each of the conductive beam optics.)
1. An ion implantation system, comprising:
an electrostatic filter for delivering an ion beam to a wafer, the electrostatic filter comprising:
a housing having an outlet proximate to the wafer; and
a plurality of conductive beam optics within the housing, the plurality of conductive beam optics arranged around an ion beam line, and the plurality of conductive beam optics comprising:
a set of inlet aperture electrodes proximate to the inlet apertures of the housing;
a set of high energy electrodes located along the ion beam line downstream of the set of entrance aperture electrodes; and
a set of ground electrodes located downstream of the set of energetic electrodes along the ion beam line, wherein the set of energetic electrodes are located further away from the ion beam line than the set of entrance aperture electrodes and the set of ground electrodes; and
an electrical system in communication with the electrostatic filter, the electrical system operable to supply voltage and current to the plurality of conductive beam optics.
2. The ion implantation system of claim 1, wherein each of the plurality of conductive beam optics are connected in parallel to allow independent adjustment of the voltage and the current.
3. The ion implantation system of claim 1, further comprising a set of exit plates extending from the housing, wherein the set of exit plates are oriented substantially parallel to a direction of travel of the ion beam, and wherein the set of ground electrodes comprises a set of exit apertures proximate the exit.
4. The ion implantation system of claim 3, wherein the set of exit apertures define a maximum envelope of back sputtered material that travels from the wafer and through the exit aperture between the set of exit apertures, and wherein a position of the set of high energy electrodes relative to the set of exit apertures prevents the maximum envelope of the back sputtered material from reaching the set of high energy electrodes.
5. The ion implantation system of claim 4, wherein a first pair of the set of exit apertures is positioned near a downstream end of the set of exit plates, and wherein a second pair of the set of exit apertures is positioned near an upstream end of the set of exit plates.
6. The ion implantation system of claim 1, further comprising a set of terminal electrodes positioned between the set of entrance aperture electrodes and the set of high energy electrodes.
7. The ion implantation system of claim 1, further comprising a set of relays operable to switch each of the set of high energy electrodes between a high voltage power supply and ground.
8. An energy purity module for delivering an ion beam to a workpiece, wherein the energy purity module comprises:
a housing having an outlet proximate the workpiece; and
a plurality of conductive beam optics positioned within the housing, the plurality of conductive beam optics comprising:
a set of inlet aperture electrodes proximate to the inlet apertures of the housing;
a set of high energy electrodes located along the ion beam line downstream of the set of entrance aperture electrodes; and
a set of ground electrodes located downstream of the set of energetic electrodes along the ion beam line, wherein the set of energetic electrodes are located further away from the ion beam line than the set of entrance aperture electrodes and the set of ground electrodes; and
an electrical system in communication with the plurality of electrical bundle optics, the electrical system operable to independently supply voltage and current to the plurality of electrical bundle optics.
9. The energy purity module of claim 8, further comprising:
a set of outlet apertures of the set of ground electrodes positioned proximate to the outlet; and
a set of outlet plates extending from the housing, wherein the set of outlet plates are oriented substantially parallel to the ion beam line, wherein a first pair of outlet apertures of the set of outlet apertures are positioned proximate a downstream end of the set of outlet plates, and wherein a second pair of outlet apertures of the set of outlet apertures are positioned proximate an upstream end of the set of outlet plates.
10. The energy purity module of claim 9, wherein the set of exit apertures define a maximum envelope of back sputtered material traveling from the workpiece and through the exit aperture between the set of exit apertures, and wherein the position of the set of high energy electrodes relative to the set of exit apertures minimizes the amount of back sputtered material reaching the set of high energy electrodes.
11. The energy purity module of claim 8, further comprising a set of terminal electrodes positioned between the set of inlet aperture electrodes and the set of high energy electrodes.
12. The energy purity module of claim 8, further comprising:
an internal heating element located within each of the set of high energy electrodes, the internal heating element operable to raise the temperature of each of the set of high energy electrodes; and
a set of relays operable to switch the internal heating element within each of the set of high energy electrodes between an on configuration and an off configuration.
13. A method of reducing particles in an ion implantation system, the method comprising:
arranging a plurality of pencil optics arranged around the ion beam line, wherein the plurality of pencil optics comprises:
a set of inlet hole electrodes disposed adjacent to the inlet hole of the housing;
a set of high energy electrodes disposed along the ion beam line downstream of the set of entrance aperture electrodes; and
a set of ground electrodes disposed downstream of the set of energetic electrodes along the ion beam line, wherein the set of energetic electrodes are positioned farther away from the ion beam line than the set of entrance aperture electrodes and the set of ground electrodes; and
an electrical system is enabled to independently supply voltage and current to the plurality of bundle optics.
14. The method of reducing particles in an ion implantation system of claim 13, further comprising:
a set of outlet holes providing the set of ground electrodes proximate to the outlet; and
providing a set of exit plates extending from the housing, wherein the set of exit apertures are oriented substantially parallel to the beamline,
wherein a first pair of outlet apertures of the set of outlet apertures is located proximate a downstream end of the set of outlet plates,
wherein a second pair of outlet apertures of the set of outlet apertures is located proximate an upstream end of the set of outlet plates, and
wherein the set of exit holes defines a maximum envelope of back sputtered material traveling from the wafer and through the exit holes.
15. The method of reducing particles in an ion implantation system of claim 14, further comprising:
adjusting a temperature of at least one of the plurality of conductive beam optics using an internal heating element; and
providing a set of relays operable to switch the internal heating element between an on configuration and an off configuration.
Technical Field
The present disclosure relates generally to ion implanters, and more particularly to conductive beam optics for improving performance and extending the life of components within a processing chamber by reducing particle accumulation.
Background
Ion implantation is a process of introducing dopants or impurities into a substrate by bombardment (bombardent). In semiconductor manufacturing, dopants are introduced to alter electrical, optical or mechanical properties. For example, dopants may be introduced into an intrinsic semiconductor substrate to alter the conductivity type and conductivity level of the substrate. In the fabrication of Integrated Circuits (ICs), precise doping profiles improve the performance of the IC. To achieve the desired doping profile, one or more dopants may be implanted in the form of ions at various doses and at various energy levels.
An ion implantation system may include an ion source and a series of beamline components. The ion source may include a chamber that generates the desired ions. The ion source may also include a power source and an extraction electrode assembly disposed adjacent the chamber. The beamline components may include, for example, a mass analyzer, a first acceleration or deceleration stage, a collimator, and a second acceleration or deceleration stage. Much like a series of optical lenses used to manipulate a beam, the beamline assembly filters, focuses, and manipulates an ion or ion beam of desired species, shape, energy, and other characteristics. The ion beam passes through the beamline assembly and may be directed toward a substrate or wafer mounted on a platen or chuck. The substrate may be moved (e.g., translated, rotated, and tilted) in one or more dimensions by a device sometimes referred to as a multi-axis rotating arm (ropot).
Ion implanters produce stable and well-defined ion beams for a variety of different ion species and extraction voltages. In using source gases (e.g. AsH)3、PH3、BF3And other species) for several hours, the beam composition (beam consistency) eventually forms a deposit on the beam optics. Beam optics in the line-of-sight of the wafer may also be coated with residues from the wafer, including Si and photoresist compounds. These residues accumulate on the beamline components, causing spikes of Direct Current (DC) potential during operation (e.g., in the case of electrical bias components). Eventually the residue will flake off, thereby increasing the likelihood of particle contamination of the wafer.
One way to prevent material build-up from occurring is to intermittently replace the beamline components of an ion implanter system. Alternatively, the beamline assembly may be manually cleaned, including powering down the ion source and relieving the vacuum within the system. After replacement or cleaning of the wire harness assembly, the system is then drained and powered to an operational state. Thus, these maintenance processes can be very time consuming. In addition, the wire harness assembly cannot be used during the maintenance process. Thus, frequently maintaining processes may reduce the time available for integrated circuit production, thereby increasing overall manufacturing costs.
Disclosure of Invention
In view of the foregoing, provided herein are systems and methods for configuring a plurality of conductive beam optics within an Energy Purity Module (EPM) to reduce particles accumulated within the energy purity module. In one or more embodiments, an ion implantation system includes an electrostatic filter for delivering an ion beam to a wafer. The electrostatic filter may include: a housing having an outlet proximate to the wafer; and a plurality of conductive beam optics located within the housing. The plurality of conductive-beam optics are arranged around the ion beam line. The plurality of conductive beam optics may include: a set of inlet aperture electrodes proximate to the inlet apertures of the housing; and a set of high energy electrodes located along the ion beam line downstream of the set of entrance aperture electrodes. The plurality of conducting beam optics may also include a set of ground electrodes located downstream of the set of high energy electrodes along the ion beam line, wherein the set of high energy electrodes may be located further away from the ion beam line than the set of entrance aperture electrodes and the set of ground electrodes. The ion implantation system may also include an electrical system in communication with the electrostatic filter, the electrical system operable to supply voltage and current to the plurality of conductive beam optics.
In one or more embodiments, an Energy Purity Module (EPM) for delivering an ion beam to a workpiece may comprise: a housing having an outlet proximate the wafer; and a plurality of conductive beam optics located within the housing. The plurality of conductive beam optics may include: a set of inlet aperture electrodes proximate to the inlet apertures of the housing; and a set of high energy electrodes located along the ion beam line downstream of the set of entrance aperture electrodes. The plurality of conductive beam optics may also include a set of ground electrodes located downstream of the set of high energy electrodes along the ion beam line, wherein the set of high energy electrodes is located farther away from the ion beam line than the set of entrance aperture electrodes and the set of ground electrodes. The energy purity module may also include an electrical system in communication with the plurality of conductive beam optics, the electrical system operable to independently supply voltage and current to each of the plurality of conductive beam optics.
In one or more embodiments, a method for reducing particles in an ion implantation system may comprise: a plurality of conductive beam optics arranged around the ion beam line are arranged. The plurality of conductive beam optics may include: a set of inlet hole electrodes disposed adjacent to the inlet hole of the housing; and a set of high energy electrodes disposed along the ion beam line downstream of the set of entrance aperture electrodes. The plurality of conductive beam optics may also include a set of ground electrodes disposed downstream of the set of energetic electrodes along the ion beam line, wherein the set of energetic electrodes is positioned farther away from the ion beam line than the set of entrance aperture electrodes and the set of ground electrodes. The method may also include enabling an electrical system to independently supply voltage and current to each of the plurality of conductive beam optics.
Drawings
Fig. 1 is a schematic diagram illustrating an ion implantation system according to an embodiment of the present disclosure.
Fig. 2A-2B are semi-transparent isometric views illustrating components of the ion implantation system of fig. 1 according to an embodiment of the present disclosure.
Fig. 3 is a side sectional view illustrating the assembly shown in fig. 2 according to an embodiment of the present disclosure.
Fig. 4 is a side cross-sectional view illustrating the assembly of fig. 3 operating with an electrical system according to an embodiment of the present disclosure.
Fig. 5 is a side sectional view illustrating the assembly of fig. 3 operating with a gas supply according to an embodiment of the present disclosure.
Fig. 6-7 are side cross-sectional views illustrating the assembly of fig. 3 operating with a set of relays according to an embodiment of the present disclosure.
Fig. 8 is a flow chart illustrating an exemplary method according to an embodiment of the present disclosure.
The drawings are not necessarily to scale. The drawings are merely representative and are not intended to portray specific parameters of the disclosure. The drawings are intended to depict example embodiments of the disclosure, and therefore should not be considered as limiting the scope. In the drawings, like numbering represents like elements. In addition, certain elements in some of the figures may be omitted or not shown to scale for clarity of illustration. Also, for clarity, some reference numbers may be omitted in some of the drawings.
Detailed Description
Systems and methods according to the present disclosure will now be described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the systems and methods are shown. The systems and methods may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the systems and methods to those skilled in the art.
For convenience and clarity, terms such as "top", "bottom", "upper", "lower", "vertical", "horizontal", "lateral", and "longitudinal" will be used herein to describe the relative placement and orientation of the various components and their constituent parts shown in the drawings. The terminology will include the words specifically mentioned, derivatives thereof, and words of similar import.
As used herein, an element or operation recited in the singular and proceeded with the word "a" or "an" should be understood as not excluding plural elements or operations, until such exclusion is explicitly recited. Furthermore, references to "one embodiment" of the present disclosure are not intended to be interpreted as excluding the existence of additional embodiments that also incorporate the recited features.
Methods of reducing particles in an ion implanter are provided herein. The electrostatic filter may include a housing and a plurality of conductive beam optics positioned within the housing. The beam optics may be arranged around a beam line directed towards the wafer and may include an entrance aperture electrode proximate the entrance aperture of the housing. The conducting beam optics may further comprise a high energy electrode located downstream of the entrance aperture electrode along the ion beam line and a ground electrode located downstream of the high energy electrode. The high-energy electrode is positioned farther from the ion beam line than the entrance electrode and the ground electrode, such that the high-energy electrode is physically blocked or shielded from being coated by the envelope (envelope) of back-sputtered material returning from the wafer. The electrostatic filter may also include an electrical system for delivering voltage and current to each of the conductive beam optics.
The electrostatic filter may be an energy purity module having a plurality of high energy electrodes "hidden" behind a grounded electrode so that back sputtered material cannot reach the high energy electrodes. In some embodiments, one or more of the conductive beam optics of the energy purity module include an internal heating element operable to raise the temperature thereof. The in-situ cleaning and chemical etching by the gas evolution in the EPM prevents the high energy electrode and the hole from depositing the back sputter material. Thus, the performance and accuracy of the ion implanter may be improved.
Referring now to fig. 1, an exemplary embodiment is shown illustrating an ion implanter or ion implantation system (hereinafter "system") 10 for delivering an ion beam to a wafer or workpiece and for performing plasma cleaning in situ on one or more components, such as, for example, a beam-conducting optics within an electrostatic filter. System 10 represents a process chamber that contains, among other components: an ion source 14 for generating an
In an exemplary embodiment, the beamline assembly 16 may filter, focus, and manipulate ions or
As shown, there may be one or more feed sources 28 operable with the chamber of the ion source 14. In some embodiments, the material provided from the feed source 28 may include source material and/or other materials. The source material may contain dopant species that are introduced into the substrate in ionic form. Meanwhile, the other materials may include a diluent that is introduced into the ion source chamber of the ion source 14 along with the source material to dilute the concentration of the source material in the chamber of the ion source 14. The other materials may also include a cleaning agent (e.g., an etchant gas) that is introduced into the chamber of the ion source 14 and transported within the system 10 to clean one or more beamline components 16.
In various embodiments, different substances may be used as source materials and/or the other materials. Examples of the source material and/or the other material may include an atomic substance or a molecular substance containing boron (B), carbon (C), oxygen (O), germanium (Ge), phosphorus (P), arsenic (As), silicon (Si), helium (He), neon (Ne), argon (Ar), krypton (Kr), nitrogen (N), hydrogen (H), fluorine (F), and chlorine (Cl). One of ordinary skill in the art will recognize that the above listed materials are non-limiting and that other atomic or molecular materials may also be used. Depending on the application, the substance may act as a dopant or the other material. In particular, a substance used as a dopant in one application may be used as another material in another application, and vice versa.
In an exemplary embodiment, the source material and/or other materials are provided in a gaseous or vapor form into an ion source chamber of the ion source 14. If the source material and/or other materials are in a non-gaseous or non-vaporous form, a vaporizer (not shown) may be provided near the feed source 28 to convert the materials into a gaseous or vaporous form. To control the amount and rate at which source material and/or other materials are provided into the system 10, a flow rate controller 30 may be provided.
The
Referring now to fig. 2A-2B,
EPM40 also operates with one or more vacuum pumps 66 (fig. 1) to adjust the pressure of
Referring now to fig. 3, an exemplary embodiment is shown demonstrating the structure and operation of EPM40 according to the present disclosure. As shown, the EPM40 may include a plurality of conductive beam optics 70A-70P (e.g., a plurality of graphite electrode rods), which are disposed along opposite sides of the
In an exemplary embodiment, the conductive beam optics 70A-70P include a plurality of pairs of conductive pieces (conductive pieces) electrically coupled to each other. Alternatively, the beam optics 70A-70P may be a series of unitary structures that each include an aperture through which the ion beam passes. In the illustrated embodiment, the upper and lower portions of each electrode pair may have different electrical potentials (e.g., located in separate conductive members) to deflect an ion beam passing therethrough. Although the plurality of conducting beam optics 70A-70P are shown as including sixteen (16) elements, a different number of elements (or electrodes) may be utilized. For example, the configuration of the conduction beam optics 70A-70P may utilize a range of three (3) electrode sets to ten (10) electrode sets.
In one non-limiting embodiment, the conduction beam optics 70A-70P may include a set of entrance aperture electrodes or aperture terminals 70A-70B proximate the
As further shown, the
For example, during use, impact of the
As shown, the location of the set of energetic electrodes 70C-70F relative to the set of exit apertures 70M-70P and ground electrodes 70I, 70J, 70K, and 70L prevents both the
Turning now to FIG. 4, an
In some embodiments, at least one of the plurality of conductive beam optics 70A-70P includes an internal heating element operable to raise its temperature. For example, the internal heating element 55 may be located within one or more of the set of inlet hole electrodes 70A-70B and within one or more of the set of terminal electrodes 70G-70H. An internal heating element 55 may also be located within each of the set of ground electrodes 70I-70P. As shown, the internal heating element 55 can be powered via a third electrical path 77 and a fourth
In the non-limiting embodiment shown in FIG. 4, four (4) high energy electrodes 70C through 70F are provided. The energetic electrodes 70C to 70F are positioned "hidden" behind the set of grounded electrodes 70I to 70P, thereby preventing the energetic electrodes 70C to 70F from splashing and coating of the back sputtered material within the
In some embodiments, solid back splashThe accumulation of shot material may be more severe, for example, when carborane, SiF, is used4Or GeF4As a source material. To prevent excessive accumulation, the EPM40 of the present disclosure can operate in two modes: a treatment mode and a cleaning mode. During the processing mode, the EPM40 may operate normally to process the
Turning now to fig. 5, EPM40 may be cleaned in-situ during the cleaning mode. To accomplish the cleaning, an etchant gas (e.g., H) may be supplied from
Various substances can be introduced as a cleaner of the etchant gas. The cleaning agent may be an atomic or molecular substance containing a chemically reactive substance. These species, when ionized, may chemically react with deposits accumulated on one or more of the beam optics 70A-70P. Although it will be described hereinDetergents with chemically reactive species, but this disclosure does not preclude the use of chemically inert species. In another embodiment, the cleaning agent may contain heavy atomic species to form ions having high atomic mass units (amu) upon ionization. Non-limiting examples of the cleaning agent may include atomic or molecular species containing H, He, N, O, F, Ne, Cl, Ar, Kr, and Xe, or combinations thereof. In one embodiment, NF3、O2Or Ar and F2Mixtures of (a) or combinations thereof may be used as the cleaning agent.
The composition of the etchant gas may be selected to optimize chemical etching based on the composition of the deposits formed on the conductive beam optics 70A-70P. For example, fluorine-based plasma may be used to etch the composition of the beam containing B, P and As, while oxygen-based plasma may be used to etch the photoresist material. In one embodiment, the addition of Ar or other heavy species to the plasma mixture increases ion bombardment, thereby increasing the removal rate of deposits from the conductive beam optics 70A-70P when a chemically enhanced ion sputtering process is used. The plasma or ion bombardment also causes heating of the surface to aid in the chemical etch rate and to aid in stirring the surface deposits from the conductive beam optics 70A through 70P.
Turning now to fig. 6-7, the operation of a set of relays 84A-84D within EPM40 according to an embodiment of the present disclosure will be explained in more detail. As shown, the EPM40 may include the set of relays 84A-84D, the set of relays 84A-84D being operable to switch each of the set of energetic electrodes 70C-70F between the high voltage first power supply 67 and the second power supply 69 (ground). In the illustrated configuration, the inner heating elements 55 may be buried within the energetic electrodes 70C-70F. During ion implantation, as shown in fig. 6, the energetic electrodes 70C to 70F are connected to the high voltage power supply 67, and the internal heating element 55 is turned off.
During beam setup, or during times when the implanter is idle, as shown in fig. 7, the high energy electrodes 70C to 70F may be connected to a
Referring now to fig. 8, a flow chart diagram of a method 100 of reducing particles in an ion implanter is shown, in accordance with an embodiment of the present disclosure. The method 100 will be explained in connection with the representations shown in fig. 1 to 7.
At block 101, the method 100 may include providing a set of inlet aperture electrodes disposed proximate to an inlet aperture of a housing of an EPM. In some embodiments, the EPM comprises a plurality of conducting beam optics comprising the set of entrance aperture electrodes. In some embodiments, the plurality of conductive beam optics comprises a plurality of electrode rods.
At block 103, the method 100 may include providing a set of high energy electrodes disposed along the beamline downstream of the set of entrance aperture electrodes. At block 105, the method 100 may include providing a set of ground electrodes disposed downstream of the set of energetic electrodes along the ion beam line, wherein the set of energetic electrodes are positioned farther away from the ion beam line than the set of entrance aperture electrodes and the set of ground electrodes.
In some embodiments, block 105 of method 100 may include providing a set of exit apertures of the set of ground electrodes proximate the exit, and providing a set of exit plates extending from the housing, wherein the set of exit apertures are oriented substantially parallel to the beamline. Block 105 of method 100 may also include positioning a first pair of outlet holes of the set of outlet holes near a downstream end of the set of outlet plates, wherein a second pair of outlet holes of the set of outlet holes are positioned near an upstream end of the set of outlet holes. The set of exit holes can define an envelope of back sputtered material that travels from the wafer and then through the exit holes.
At block 107, the method 100 may include enabling an electrical system to independently supply voltage and current to each of the plurality of conductive beam optics. In some embodiments, a first voltage and a first current are supplied to the plurality of beam-conducting optics during a processing mode. In some embodiments, the first voltage and the first current are supplied by a Direct Current (DC) power supply. In some embodiments, the method 100 further comprises switching from the treatment mode to the cleaning mode. In some embodiments, block 107 includes automatically switching from the processing mode to the cleaning mode if a predetermined threshold (e.g., a maximum acceptable number of beam glitches) is reached.
During the cleaning mode, a second voltage and a second current may be supplied to the conductive beam optics. In some embodiments, a second voltage and a second current are applied to the conductive beam optics to generate the plasma. In some embodiments, the second voltage and the second current are supplied by a Direct Current (DC) power supply or a Radio Frequency (RF) power supply.
At block 109, the method 100 may include supplying an etchant gas and/or adjusting a temperature of one or more of the plurality of conductive beam optics to reduce particles in the ion implanter and enable etching. In some embodiments, the injection rate of the etchant gas is adjusted. In some embodiments, the composition of the etchant gas is selected based on the composition of the deposits formed on the surface of the component to optimize etching of the component. In some embodiments, at least one of the plurality of electrical bundle optics comprises an internal heating element operable to raise the temperature thereof.
In view of the foregoing, at least the following advantages are achieved by the embodiments disclosed herein. In a first advantage, EPM reduces particles by eliminating or greatly reducing the deposition of back-sputtered material onto EPM electrodes and holes, thereby improving device yield and productivity of the ion implanter. In a second advantage, the EPM may include only four (4) high energy electrodes hidden behind the ground electrode and the holes, thereby preventing the high energy electrodes from splashing and coating with the back sputtered material. The back sputtered material is stopped and collected by the ground electrode/hole and the terminal electrode/hole. In a third advantage, the one or more conductive beam optics may include heat lamps buried inside to evaporate the back sputtered material into gaseous form to be pumped out of the EPM. In addition to the hidden high energy electrode, an automated and in situ cleaning mechanism helps keep all EPM electrodes and holes free of deposited back sputtered material during implantation.
While certain embodiments of the disclosure have been set forth herein, the disclosure is not to be limited thereto, as the scope of the disclosure is as broad in scope as the art will allow and as the specification may suggest. The above description is therefore not to be taken in a limiting sense. Other modifications will occur to those skilled in the art that are within the scope and spirit of the appended claims.
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