阅读说明：本技术 微机械部件和形成层结构的方法
(Micromechanical component and method for forming a layer structure
) 是由 J.鲁德亚德
C.T.班扎夫 于 2020-03-26 设计创作，主要内容包括：本发明涉及微机械部件和形成层结构的方法。具体地,本发明涉及微机械部件,其具有衬底；由至少一种第一材料形成的第一层(10),所述第一层具有至少一个平行于衬底(12)的子表面(12a)取向的凸出子区域(10a),所述凸出子区域(10a)分别通过第一层(10)的围绕各自凸出子区域(10a)的各一个过渡区域(10b)与第一层(10)的至少一个平行于衬底(12)的子表面(12a)取向的缩回子区域(10c)连接；由与第一材料相同或不同的第二材料形成的第二层(28)；和环绕第一层(10)的所述至少一个过渡区域(10c)的各一个由填充材料形成的环形填充区域(26a),所述环形填充区域(26a)被第一层(10)和第二层(28)气密性包围,其中所述至少一个环形填充区域(26a)的填充材料的热和/或固有内应力与第二材料的热和/或固有内应力不同。(The invention relates to a micromechanical component and a method for forming a layer structure. In particular, the invention relates to a micromechanical component having a substrate; a first layer (10) made of at least one first material, having at least one protruding subregion (10 a) oriented parallel to a sub-surface (12 a) of the substrate (12), the protruding subregions (10 a) being connected in each case by in each case one transition region (10 b) of the first layer (10) surrounding the respective protruding subregion (10 a) to at least one retracted subregion (10 c) of the first layer (10) oriented parallel to the sub-surface (12 a) of the substrate (12); a second layer (28) formed of a second material that is the same as or different from the first material; and an annular filling region (26 a) formed from a filling material surrounding each of the at least one transition region (10 c) of the first layer (10), the annular filling region (26 a) being hermetically surrounded by the first layer (10) and the second layer (28), wherein the thermal and/or intrinsic internal stress of the filling material of the at least one annular filling region (26 a) differs from the thermal and/or intrinsic internal stress of the second material.)
1. A micromechanical component having:
a substrate (12); and
a first layer (10) of at least one first material arranged on a sub-surface (12 a) of the substrate (12), the first layer (10) having at least one projecting sub-region (10 a) oriented parallel to the sub-surface (12 a) of the substrate (12), the projecting sub-regions (10 a) being connected in each case by in each case one transition region (10 b) of the first layer (10) around the respective projecting sub-region (10 a) to at least one retracted sub-region (10 c) of the first layer (10) oriented parallel to the sub-surface (12 a) of the substrate (12);
it is characterized in that
A second layer (28) made of a second material that is the same as or different from the first material, the second layer (28) at least partially covering a surface of the first layer (10) facing away from the substrate (12); and
-each one of said at least one transition region (10 c) surrounding the first layer (10) is an annular filling region (26 a) formed by a filling material, wherein said at least one annular filling region (26 a) is hermetically enclosed by the first layer (10) and the second layer (28), and wherein the thermal and/or intrinsic internal stress of the filling material of said at least one annular filling region (26 a) is different from the thermal and/or intrinsic internal stress of the second material.
2. Micromechanical component according to claim 1, wherein the thermal and/or intrinsic internal stress of the filling material of said at least one annular filling region (26 a) differs from the thermal and/or intrinsic internal stress of the second material in such a way that: such that the filler material of the at least one annular filler region (26 a) causes a tensile stress to the second layer (28) formed of the second material.
3. Micromechanical component according to claim 1 or 2, wherein the second layer (28) is formed of silicon as a second material and the at least one annular fill region (26 a) is formed of a material containing silicon and oxygen as a fill material.
4. Micromechanical component according to claim 3, wherein the at least one annular filling region (26 a) is formed from silicon dioxide or tetraethylorthosilicate as filling material.
5. Micromechanical component according to one of the preceding claims, wherein the layer structure formed by the first layer (10), the second layer (28) and the at least one annular filling region (26 a) is at least part of a bragg reflector and/or a fabry-perot interferometer.
6. Method of forming a layer structure, having the steps of:
forming a first layer (10) of the layer structure from at least one first material on and/or over a sub-surface (12 a) of the substrate (12), wherein a first layer (10) is formed having at least one projecting sub-region (10 a) oriented parallel to the sub-surface (12 a) of the substrate (12), the projecting sub-regions (10 a) being connected in each case by a respective transition region (10 b) of the first layer (10) around the respective projecting sub-region (10 a) to at least one retracted sub-region (10 c) of the first layer (10) oriented parallel to the sub-surface (12 a) of the substrate (12);
it is characterized by the following steps:
forming one annular fill region (26 a) each surrounding said at least one transition region (10 c) of the first layer (10); and
at least partially covering the surface of the first layer (10) facing away from the substrate (12) with a second layer (28) formed of a second material, which is the same or different from the first material, so that the at least one annular filling region (26 a) is hermetically surrounded by the first layer (10) and the second layer (28);
wherein the at least one annular filling region (26 a) is formed from a filling material having a thermal and/or intrinsic internal stress different from a thermal and/or intrinsic internal stress of the second material.
7. Method according to claim 6, wherein the filling material is deposited on the first layer (10) in a force-and form-fitting manner in order to form the at least one annular filling zone (26 a).
8. Method according to claim 6 or 7, wherein for forming said at least one annular filling region (26 a) said filling material is deposited on the first layer (10) by means of a high temperature oxidation method or tetraethylorthosilicate deposition.
9. Method according to one of claims 6 to 8, wherein for forming the at least one annular filling region (26 a) the filling material is deposited on the first layer (10) in such a way that a surface of the first layer (10) facing away from the substrate (12) is at least partially covered by a layer (26) of filling material formed from the filling material, and wherein the at least one annular filling region (26 a) is constructed from the layer (26) of filling material by means of an isotropic, maskless, dry etching step.
10. The method according to claim 9, wherein the at least one annular fill region (26 a) is structured from the layer of fill material (26) by means of an inductively coupled plasma in an isotropic, maskless, dry etching step.
Technical Field
The present invention relates to micromechanical components. The invention also relates to a method of forming a layered structure.
Background
DE 102007051537B 4 describes optical multilayer mirrors which are said to be usable, for example, as Fabry-Perot interferometers. The multilayer optical mirror includes a lower mirror (Spiegel) formed over a substrate and an upper mirror, wherein the upper mirror is separated from the lower mirror by a gap. Both the lower mirror and the upper mirror each have a layer of a high-refractive-index material, which has at least one convex subregion oriented parallel to the sub-surface of the substrate, which convex subregions are each connected to at least one retracted subregion oriented parallel to the sub-surface of the substrate by a respective transition region surrounding the respective convex subregion.
Disclosure of Invention
Drawings
Further features and advantages of the invention are explained below with the aid of the figures. Wherein:
FIGS. 1a to 1d show schematic cross-sections for explaining one embodiment of a method of forming a layer structure, and
fig. 2 shows a schematic partial view of an embodiment of the micromechanical component.
Detailed Description
Fig. 1a to 1d show schematic cross-sections for illustrating one embodiment of a method of forming a layer structure.
In carrying out the method, the first layer 10 of the layer structure (to be described later) is formed on and/or over the sub-surface 12a of the substrate 12. The substrate 12 may be a semiconductor substrate, such as a silicon substrate. However, instead of or in addition to silicon, the substrate 12 may also comprise at least one other semiconductor material, at least one metal and/or at least one electrically insulating material.
In the embodiment described here, the first layer 10 is not deposited directly on the sub-surface 12a of the substrate 12, but rather a so-called "substructure" of the layer structure (to be later) is first formed on the sub-surface 12a of the substrate 12. The "substructure" comprises, for example, a first oxide layer 14a, at least one conductor circuit 16 and a second oxide layer 14 b. The first oxide layer 14a at least partially covering the sub-surface 12a of the substrate 12 may for example be formed as a thermally oxidized silicon layer. The at least one conductor circuit 16 may be constructed from a polysilicon layer deposited on the first oxide layer 14 a. The second oxide layer 14b may then be deposited on the at least one conductor circuit 16 and at least one exposed surface (freiliegendan Fl ä che) of the first oxide layer 14 a. In the embodiment described here, the at least one through (durchgehende) opening 18 is also formed, for example, by the second oxide layer 14b, in such a way that at least one sub-surface of the at least one conductor track 16 is exposed. The at least one via 18 can be used for at least one electrical contact between the at least one conductor circuit 16 and the layer structure, respectively. It is noted, however, that the "infrastructure" components 14a, 14b, and 16 and the structure 18 described herein should be construed as exemplary only.
In the embodiments described herein, the layer structure is part of a bragg reflector of a fabry-perot interferometer. Therefore, before forming the layer structure, the high refractive index layer 20 of the (later) bragg reflector of the fabry-perot interferometer is first formed. To this end, a high refractive index layer 20 is deposited on the outer surface of the second oxide layer 14b (and possibly on the bottom and wall surfaces of the at least one consecutive indentation 18). The high refractive index layer 20 may be, for example, a doped polysilicon layer. The high-refractive-index layer 20 can be produced in particular by means of chemical vapor deposition at low pressure (i.e. by means of LPCVD methods, low-pressure chemical vapor deposition). However, as with the formation of the "substructure", the formation of high refractive index layer 20 is also an optional method step. If the high refractive index layer 20 is formed, a subsequently deposited layer structure may cause bragg reflection as an additional high refractive index layer together with the high refractive index layer 20.
In order to specify the gap width of at least one gap which is present later between the high refractive index layer 20 and the layer structure, a sacrificial layer 22 is deposited on the outer surface of the high refractive index layer 20 facing away from the substrate 12. The gap width defined by the sacrificial layer 22 may be, for example, 200nm (nanometers) to 500nm (nanometers). The sacrificial layer 22 is preferably an oxide layer that can be easily removed by a later etching step. For depositing the sacrificial layer 22, a chemical vapor deposition may also be performed at low pressure, such as, in particular, a High Temperature Oxidation Process (HTO Process) or a tetraethylorthosilicate deposition (i.e., TEOS deposition).
In the deposited sacrificial layer 22, at least one continuous recess 24 is formed, which partially exposes the outer side of the high refractive index layer 20 facing away from the substrate 12. As explained in more detail below, the at least one consecutive (durchgehende) notch 24, which is formed by the sacrificial layer 22, defines the location of a later "local support location" of the layer structure. The at least one consecutive indentation 24 formed by the sacrificial layer 22 is preferably formed with a vertical profile. If the at least one continuous (durchgehende) gap 18 is formed by the second oxide layer 14b, it is preferred that the sacrificial layer 22 is also removed in the at least one continuous gap 18 and possibly in adjacent regions, so that the outer side of the high refractive index layer 20 is locally exposed. As a method for constructing the sacrificial layer 22, for example, photolithography can be performed. The photoresist (Photolack), not shown in FIG. 1a, used as an etch mask during photolithography can then be removed. Optionally, a cleaning step may also be performed after the sacrificial layer 22 is constructed.
A first layer 10 of a (later) layer structure may then be deposited on the remaining parts of the sacrificial layer 22 and on the partially exposed outer side of the high refractive index layer 20. In this way, a first layer is formed with at least one convex subregion 10a oriented parallel to the sub-surface 12a of the substrate, wherein the at least one convex subregion 10a is connected in each case by a respective one transition region 10b of the first layer 10 surrounding the respective convex subregion 10a to at least one retracted subregion 10c of the first layer 10 oriented parallel to the sub-surface 12a of the substrate 12. If the at least one consecutive indentation 24 constructed from the sacrificial layer 22 has a (substantially) vertical profile, the at least one transition region 10b of the first layer 10 extends (almost) perpendicular to the sub-surface 12a of the substrate 12 from its protruding sub-region 10a to the assigned retracted sub-region 10 c.
The first layer 10 is understood to be a hermetically sealing (gas-impermeable) layer. The first layer thickness d1 of the first layer 10 oriented perpendicularly to the partial surface 12a of the substrate 12 is advantageously (almost) equal to the minimum total layer thickness d of the (later) layer structure oriented perpendicularly to the partial surface 12a of the substrate 12General assemblyHalf of that. The first layer thickness d1 of the first layer 10 is, for example, 10nm (nanometers) to 100nm (nanometers). Advantageous materials for forming the first layer 10 will also be discussed below when referring to the interaction of the first layer 10 with other components of the layer structure (later).
After forming the first layer 10, one annular fill region 26a each is formed surrounding the at least one transition region 10b of the first layer 10. The at least one annular filling region 26a is preferably formed by only one (single) filling material. In the example of fig. 1a to 1d, to form the at least one annular filling region 26a, its filling material is deposited on the first layer 10: so that the surface of the first layer 10 facing away from the substrate 12 is at least partially/preferably completely covered by a layer 26 of filler material formed by the filler material of the at least one (later) annular filler region 26 a. It may often be advantageous to use the same material as used for the sacrificial layer 22 as the filler material for the at least one (later) annular fill region 26 a. However, in principle there is a process freedom and it is also possible to use different materials for the at least one annular filling region 26a and the sacrificial layer 22. Advantageous examples of the filling material of the at least one annular filling zone 26a are also described below.
The layer 26 of filler material is preferably deposited on the first layer 10 in a force-and form-fitting manner (kraft-und formschlussig). To deposit the layer 26 of filler material, chemical vapor deposition may be performed, for example, at low pressure. In particular, the layer of filler material 26 may be deposited on the first layer 10 by means of a high temperature oxidation process or tetraethylorthosilicate deposition. Fig. 1a shows the layer system after deposition of the layer 26 of filler material.
Fig. 1b shows the layer system after structuring of the at least one annular filling region 26a from the layer 26 of filling material. In the formation of the at least one annular filling region 26a, preferably only the filling material of the filling material layer 26 adjacent to the at least one transition region 10b of the first layer 10 is not removed. In this way, an approximate "ring structure" or "toroidal shape" of the at least one annular fill region 26a is obtained.
The at least one annular fill region 26a is preferably constructed by means of an isotropic, maskless, dry etching step. This isotropic, maskless, dry etching step may be performed, for example, in an ICP etching apparatus, such that the at least one annular fill region 26a is constructed by means of an inductively coupled plasma. An ICP Etching apparatus may be understood as an apparatus designed for Reactive-Ion Etching (Reactive-Ion Etching) by means of Inductively Coupled Plasma (Inductively Coupled Plasma). In carrying out such an etch, etch parameters such as the etch gas and plasma power used may be specified as follows: so that there is a good selectivity between the predominantly etched layer 26 of filler material and the unetched/hardly etched first layer 10. The etching gas used can act on the layer 26 of filling material like an "ion bombardment", wherein a good selectivity ensures at the same time a negligible risk of over-etching the first layer 10. The progress of etching performed in the ICP etching apparatus can be detected, for example, by means of optical endpoint recognition, so that etching can be ended at an appropriate point in time.
Alternatively, the at least one annular filling region 26a may also be structured by means of etching by using argon ions. Since the argon ions have a relatively low selectivity with respect to the layer of filler material 26 which is to be etched predominantly compared to the layer of first layer 10 which is not to be etched/is to be etched hardly, the layer of filler material 26 can also be constructed maskless by means of etching by using argon ions, while tolerating a small amount of stripping of the layer of first layer 10. In this case, the first layer 10 can be deposited correspondingly thicker than its desired first layer thickness d1 in advance, so that the desired first layer thickness d1 of the first layer 10 is not present until after the maskless configuration of the filler-material layer 26.
As shown in fig. 1c, the surface of the first layer 10 facing away from the substrate 12 is then at least partially covered again by the second layer 28 of the layer structure. The second layer 28 is preferably understood to be a layer formed of only one (single) material. Fig. 1c shows a layer structure formed by the first layer 10, the second layer 28 and the at least one annular filling region 26a, which is anchored in particular at the respective position of the at least one consecutive indentation 24 on the high refractive index layer 22. The respective position of the at least one continuous recess 24 thus defines a later local support position 30 of the layer structure on the high-refractive-index layer 22.
The second layer 28 may be deposited, for example, by chemical vapor deposition at low pressure. To deposit the second layer 28, the same deposition method as that for forming the first layer 10 may be performed. The thickness d2 of the second layer 28 of the second layer oriented perpendicularly to the sub-surface 12a of the substrate 12 is preferably 10nm (nanometers) to 100nm (nanometers). The second layer thickness d2 of the second layer 28 may in particular be (almost) equal to the minimum total layer thickness d of the layer structure oriented perpendicular to the sub-surface 12a of the substrate 12General assemblyHalf of that. Thus, the minimum total layer thickness d of the layer structureGeneral assemblyPreferably the sum of the first layer thickness d1 of the first layer 10 and the second layer thickness d2 of the second layer 28.
The second layer 28 is understood to be a gas-tight (gas-impermeable) layer. Since the at least one annular filling region 26a is formed before the surface of the first layer 10 facing away from the substrate 12 is at least partially covered with the second layer 28, the at least one annular filling region 26a is hermetically surrounded by the first layer 10 and the second layer 28 after the first layer 10 is at least partially covered with the second layer 28. Since the at least one annular filling region 26a is formed in a force-and form-fitting manner on the first layer 10 and is surrounded in a gas-tight manner by the first layer 10 and the second layer 28, the mechanical stresses occurring in the at least one annular filling region 26a are predominantly introduced into the second layer 28. Thus, the at least one annular filler region 26a may be used to introduce compressive or tensile stress into the second layer 28.
In order to introduce compressive or tensile stresses into the second layer 28 by means of the at least one annular filling region 26a, it is therefore (substantially) only necessary to make the material of the second layer 28 different from the filling material of the at least one annular filling region 26 a. The achievement of the required compressive or tensile stress in particular requires only that the at least one annular filling region 26a is formed by a filling material whose thermal and/or intrinsic internal stress differs correspondingly from the thermal and/or intrinsic internal stress of the material of the second layer 28.
A layer of semiconductor material is generally preferred as the second layer 28 because such a layer of semiconductor material is suitable for a variety of application purposes. The second layer 28 may be, for example, a silicon layer, such as in particular a polysilicon layer. A cost-effective, easily deposited, easily constructed and versatile material can thus be used for the second layer 28. In order to cause the required compressive or tensile stress to the second layer 28, it is (substantially) sufficient that the thermal and/or intrinsic internal stress of the filling material of the at least one annular filling region 26a differs from the thermal and/or intrinsic internal stress of the silicon/polysilicon in this way: such that the at least one annular fill region 26a introduces a desired compressive or tensile stress into the second layer 28. In particular in the case of a second layer 28 formed from silicon/polysilicon, a favorable tensile stress can be introduced into the second layer 28, for example by means of the at least one annular filling region 26a, as long as the at least one annular filling region 26a is formed from (thermal) silicon dioxide as filling material, LPCVD oxide (low-pressure chemical vapor deposition) or an oxide formed by chemical vapor deposition at low pressure, or tetraethylorthosilicate. However, the material combination of silicon/polysilicon for the second layer 28 and (thermal) silicon dioxide or tetraethylorthosilicate as a filling material for introducing a favorable tensile stress into the at least one annular filling region 26a in the second layer 28 described herein should only be construed as exemplary. It is important for the desired effect to be achieved by the material combination of the second layer 28 and the filler material that the thermal and/or intrinsic internal stresses of the filler material differ from the corresponding material properties of the second layer 28.
The first layer 10 may optionally be formed of the same material as the second layer 28 or of a material not included in the second layer 28. It is explicitly noted here that if the first layer 10 is of the same material as the second layer 28, the required compressive or tensile stress in the second layer 28 can also be caused (only) by means of the at least one annular filling region 26 a. Thus, forming the at least one annular filler region 26a between the layers 10 and 28 increases the freedom of choice in the choice of material for the first layer 10. The first layer 10 is preferably a layer of semiconductor material. The first layer 10 may for example be a silicon layer, such as in particular a polysilicon layer, so that the advantages of silicon/polysilicon are also available for the first layer 10. It is to be noted, however, that the material of the first layer 10 can be chosen relatively freely. The first layer 10 and the second layer 28 can therefore be, without any problem, a "single layer (Einzellagen)" in a "double layer (Doppelschicht)" formed from the same material, wherein nevertheless the required compressive and/or tensile stress can be caused at least in the second layer 28 by means of the at least one annular filling region 26 a. Thus, if the first layer 10 and the second layer 28 can generally only be formed from the same material and nevertheless it is necessary to cause compressive or tensile stress at least in the second layer 28, the techniques described herein are also advantageously suitable for having a relatively small minimum overall layer thickness dGeneral assemblyThe layer structure of (2).
The sacrificial layer 22 is then selectively removed. The oxide layer used as the sacrificial layer 22 may be removed, for example, by means of an isotropic HF vapor method (i.e., by a vapor method using hydrogen fluoride). If desired, regions of the first oxide layer 14a and the second oxide layer 14b can also be removed together with the sacrificial layer 22, so that the self-supporting region 32 of the overall layer system formed by the high refractive index layer 20 and the layer structure (formed by the first layer 10, the second layer 28 and the at least one annular filling region 26 a) can be freed (freestellen). It may also be possible to at least partially remove substrate material of the substrate 12 that is spanned by the free-standing regions 32. In this case, however, the overall layer system is also mechanically firmly anchored to the substrate 12 at the location of the at least one continuous via 18, at which at least one electrical contact between the at least one conductor circuit 16 and the overall layer system is present at the location of the at least one continuous via 18.
Due to the force-and form-fitting deposition of the filling material of the at least one annular filling region 26a on the first layer 10, the removal of the sacrificial layer 22 does not influence (substantially does not influence) the shape of the first layer 10. Therefore, after the removal of the sacrificial layer 22, there is no/little fear of unwanted deformation of the first layer 10.
Since the two layers 10 and 28 hermetically surround the at least one annular filling region 26a, the filling material of the at least one annular filling region 26a can exert mechanical stress on the contact region of the second layer 28, in particular at the at least one local support location 30. Thus, at the at least one local support location 30, the filler material of the at least one annular filler region 26a may specifically couple intrinsic and/or thermal internal stresses into the second layer 28 of the layer structure. By suitably selecting the intrinsic and/or thermal internal stress of the filler material of the at least one annular filler region 26a compared to the material of the at least second layer 28, a tensile stress can be coupled in particular into the at least second layer 28, as is shown figuratively by the arrow 34 in fig. 1 d. Thus, the at least one local support location 30 may be embedded in the layer structure as a stress concentration point or stress concentration structure, respectively. This effect is enhanced if the at least one local support location 30 is formed within the self-supporting area 32 of the overall layer system.
Fig. 2 shows a schematic partial view of an embodiment of the micromechanical component.
The micromechanical component partially shown in fig. 2 corresponds to the embodiment schematically depicted in fig. 1 d. The micromechanical component has a substrate 12 (not shown), the orientation of its sub-surface 12a being indicated in fig. 2 by means of a dashed line 12 a. A first layer 10 formed of at least one first material is arranged on a sub-surface 12a of the substrate 12. The first layer 10 may be supported or anchored on a sub-surface 12a of the substrate 12, for example as shown in fig. 1 d. The first layer 10 has at least one convex subregion 10a oriented parallel to the sub-surface 12a of the substrate 12, which is connected in each case via a respective transition region 10b of the first layer 10 surrounding the respective convex subregion 10a to at least one retracted subregion 10c of the first layer 10 oriented parallel to the sub-surface 12a of the substrate 12. A second layer 28, formed of a second material that is the same or different from the first material, at least partially covers the surface of the first layer 10 facing away from the substrate 12. The second layer 28 is preferably understood to be a layer formed solely of the second material.
Furthermore, the micromechanical component has an annular filling region 26a of a filling material surrounding each of the at least one transition region 10b of the first layer 10, which is surrounded in a gas-tight manner by the first layer 10 and the second layer 28. The at least one annular filler region 26a is preferably formed entirely of the filler material alone. The thermal and/or intrinsic internal stress of the filling material of the at least one annular filling region 26a differs from the thermal and/or intrinsic internal stress of the second material, so that in the case of the micromechanical component of fig. 2 also compressive or tensile stresses are introduced in particular into the second layer 28 by means of the at least one annular filling region 26 a. In the case of the micromechanical component of fig. 2, the at least one local support location 30 may therefore also be referred to as a stress concentration point 36 or stress concentration structure.
As schematically depicted in fig. 2 by means of the arrow 34, in the embodiment described here, the thermal and/or intrinsic internal stress of the filling material of the at least one annular filling region 26a differs in this way from the thermal and/or intrinsic internal stress of the second material of the second layer 28: such that the filler material of the at least one annular filler region 26a causes a tensile stress to the second layer 28. Also exemplarily shown in fig. 2 is a stress concentration point 36, which is caused by the internal stress of the adjacent annular filling region 26a and by means of which in particular the second layer 28 "is tensioned like a drumhead". The layer stress to be coupled into the second layer 28 can be freely adjusted within a certain range by means of the internal stress of the adjacent annular filling region 26 a. At the same time, deformation of the first layer 10 (and accordingly also of the high-refractive-index layer 20) is prevented as a result of the force-and form-fitting connection of the at least one annular filling region 26a to the first layer.
Exemplary is a second layer 28 formed of silicon as a second material and the at least one annular fill region 26a formed of a silicon and oxygen containing material as a fill material. In particular, the at least one annular filling region 26a may be formed of silicon dioxide or tetraethyl orthosilicate as a filling material. As described above, the first layer 10 can be formed of the same material as the second layer 28 without any problem. The layer structure formed by the first layer 10, the second layer 28 and the at least one annular filling region 26a can thus be a "monomodal" layer structure, wherein the internal stresses of the layer structure can nevertheless be specifically set by means of the at least one annular filling region 26 a. As the at least one local support location 30, a network of local support locations 30 may also mechanically and electrically connect the layer structure and the high refractive index layer 20 to each other. According to an embodiment, for example, 10 to 1000 local support locations 30 may be formed.
The high refractive index layer 20 and the layer structure formed by the first layer 10, the second layer 28 and the at least one annular filling region 26a together function as a bragg reflector of a fabry-perot interferometer. As shown in fig. 1d, the high refractive index layer 20 and the layer structure cooperating therewith are suspended from the sub-surface 12a of the substrate 12. The high refractive index layer 20 and a part of the layer structure thus form a self-supporting region 32 of the overall layer system formed by the high refractive index layer 20 and the layer structure. The dimension of the free-standing region 32 parallel to the sub-surface 12a of the substrate 12 can be up to a few millimeters without problems. Separately from the overall layer system formed by the high-refractive-index layer 20 and the layer structure, a further bragg reflector of the fabry-perot interferometer may also be arranged.
With regard to other characteristics and features of the micromechanical component of fig. 2, reference is made to the aforementioned fig. 1a to 1 d.
