阅读说明：本技术 一种用于调控p-Si/n-ZnO薄膜异质结电学性能和光电输出的方法 (Method for regulating and controlling heterojunction electrical property and photoelectric output of p-Si/n-ZnO film ) 是由 郑海务 丁震宇 李新营 张远征 周炎 李明清 于 2020-07-08 设计创作，主要内容包括：一种用于调控p-Si/n-ZnO薄膜异质结电学性能和光电输出的方法,涉及半导体异质结器件领域,包括悬臂梁式的应变机构,应变机构包括夹片结构和运动结构,p-Si/n-ZnO薄膜异质结器件作为悬臂梁,运动结构包括压片器和运动电机,压片器可随运动电机移动,运动电机可以精确控制运动距离并实现锁定定位,运动电机控制所述压片器下压,造成悬臂梁的弯曲,悬臂梁的弯曲形变会等效一部分在p-Si/n-ZnO薄膜异质结器件的厚度方向上,从而造成纵向压应变的产生,随着运动电机行程的变化,本发明制备高质量的p-Si/n-ZnO薄膜异质结器件,并提供在压电电子学和压电光电子学框架内调控器件的电子学和光电子学性能方案,这在一定程度上拓宽了压电电子学和压电光电子学的应用范围。(A method for regulating and controlling the electrical property and photoelectric output of p-Si/n-ZnO film heterojunction device relates to the field of semiconductor heterojunction devices and comprises a cantilever beam type strain mechanism, wherein the strain mechanism comprises a clamping piece structure and a motion structure, the p-Si/n-ZnO film heterojunction device is used as a cantilever beam, the motion structure comprises a tabletting device and a motion motor, the tabletting device can move along with the motion motor, the motion motor can accurately control the motion distance and realize locking and positioning, the motion motor controls the tabletting device to press down to cause the bending of the cantilever beam, the bending deformation of the cantilever beam can be equivalent to one part in the thickness direction of the p-Si/n-ZnO film heterojunction device, so as to cause the generation of longitudinal compressive strain, and along with the change of the stroke of the motion motor, the invention prepares a high-quality p-Si/n-ZnO film heterojunction device, and provides a scheme for regulating and controlling the electronic and optoelectronic properties of the device in the framework of the piezoelectric electronics and the piezoelectric optoelectronics, which widens the application range of the piezoelectric electronics and the piezoelectric optoelectronics to a certain extent.)

1. A method for regulating and controlling the electrical property and the photoelectric output of a p-Si/n-ZnO thin film heterojunction is characterized by comprising a cantilever type strain mechanism (1), wherein the strain mechanism (1) comprises a clamping piece structure (2) and a moving structure (3), a p-Si/n-ZnO thin film heterojunction device (4) is used as a cantilever beam, the moving structure (3) comprises a tabletting device and a moving motor, the tabletting device can move along with the moving motor, the moving motor can accurately control the moving distance and realize locking and positioning, the moving motor controls the tabletting device to press down to cause the bending of the cantilever beam, the bending deformation of the cantilever beam can be equivalent to the generation of longitudinal compressive strain with a part in the thickness direction of the p-Si/n-ZnO thin film heterojunction device (4), the equivalent deformation can also change along with the change of the stroke of the moving motor, wherein the bottommost layer of the p-Si/n-ZnO thin film heterojunction device (4) is a p-type silicon substrate (5), a ZnO thin film layer (6) and an ITO thin film electrode II (7) which are parallel and not in contact with each other are arranged next to the p-Si/n-ZnO thin film heterojunction device, and a layer of ITO thin film electrode I (8) is attached to the upper portion of the ZnO thin film layer (6).

2. The method for regulating and controlling the electrical property and the photoelectric output of the p-Si/n-ZnO thin film heterojunction as claimed in claim 1, wherein the p-Si/n-ZnO thin film heterojunction device (4) is tested by the following steps: fix iron stand platform (9) on optical platform, place straining mechanism (1) on iron stand platform (9), laser instrument (10) are placed at electricity tester (11) top, have added shutter (12) in the optic fibre exit of laser instrument (10) with the on-off of quick control light path, shutter (12) use 3D to print the shell cladding of ordering with optic fibre export and link to each other, shutter (12) carry out fixed stay through iron stand platform (9).

3. The method for regulating and controlling the electrical property and the photoelectric output of the p-Si/n-ZnO thin film heterojunction as claimed in claim 2, wherein the p-type silicon substrate (5) is a p-doped silicon wafer with the thickness of 10mm x 0.5mm, and is ultrasonically cleaned for 30 minutes by deionized water, acetone and ethanol and then dried by a nitrogen gun to serve as a substrate for later use.

4. The method for regulating and controlling the electrical property and the photoelectric output of the p-Si/n-ZnO thin film heterojunction as claimed in claim 3, wherein the ZnO thin film layer (6), the ITO thin film electrode II (7) and the ITO thin film electrode I (8) are all prepared in a radio frequency magnetron sputtering mode.

5. The method for regulating and controlling the electrical property and the photoelectric output of the p-Si/n-ZnO film heterojunction as claimed in claim 4, wherein the preparation of the ZnO film layer (6) is characterized in that a p-type silicon substrate (5) is placed in a JGP-350B type magnetron sputtering instrument vacuum cavity, wherein a target material is ZnO ceramic with the purity of 99.99 percent and the diameter of 6cm, after the p-type silicon substrate (5) is covered with a mask plate with a corresponding pattern, the cavity is closed and pumped to 4 × 10 by a mechanical pump and a molecular pump^-4And (3) introducing argon and oxygen according to the ratio of 40:2 after 5 times of argon gas scrubbing for Pa, keeping the air pressure of the cavity to be stable at 2.2Pa, rotating the revolution shaft to move the sample table away to carry out pre-sputtering for 10min before formal sputtering is started, then formally sputtering for 15min, wherein the pre-sputtering power and the formal sputtering power are both 80W, the substrate heating temperature is 500 ℃, and finally, naturally annealing the p-type silicon substrate (5) and taking out.

6. The method for regulating and controlling the electrical property and the photoelectric output of the p-Si/n-ZnO thin film heterojunction as claimed in claim 5, wherein the ITO thin film electrode II (7) and the ITO thin film electrode I (8) are prepared by the following steps: and (2) putting the p-type silicon substrate (5) into a vacuum cavity of a JGP-350B type magnetron sputtering instrument, wherein the target material is an ITO ceramic target material with the purity of 99.99 percent and the diameter of 6cm, the sputtering temperature is room temperature, pure argon is introduced, the cavity pressure is kept at 2.2Pa, the sputtering power is 50W, the sputtering time is 10min, and finally, the p-type silicon substrate (5) is taken out after natural annealing.

7. The force and light composite detector is obtained by using the method for regulating and controlling the electrical property and the photoelectric output of the p-Si/n-ZnO film heterojunction as claimed in any one of claims 1 to 6.

8. The gate circuit obtained by using the method for regulating and controlling the electrical property and the photoelectric output of the p-Si/n-ZnO thin film heterojunction as claimed in any one of claims 1 to 6.

9. The photovoltaic device obtained by using the method for regulating and controlling the electrical property and the photoelectric output of the p-Si/n-ZnO film heterojunction as claimed in any one of claims 1 to 6.

Technical Field

The invention relates to the field of semiconductor heterojunction devices, in particular to a method for regulating and controlling the electrical property and photoelectric output of a p-Si/n-ZnO thin film heterojunction.

Background

The semiconductor heterojunction device can be widely applied to the fields of electronic devices, photovoltaic cells, integrated circuits, detection sensing and the like, and has wide application scenes. The piezoelectric electronics and the piezoelectric optoelectronics are systematic theories developed in recent years for regulating and controlling the electronic and optoelectronics performances of heterojunction devices, semiconductor properties and piezoelectric properties of materials are organically combined, and piezoelectric polarization charges generated by a piezoelectric effect are utilized to directionally regulate and control the generation, separation, transportation and behaviors in the compounding process of electron-hole pairs at the heterojunction interfaces of semiconductors, so that the electronic and optoelectronics performances of the heterojunction are changed.

Currently, in the theoretical framework of piezoelectric electronics and piezoelectric optoelectronics, there are many examples of specific schemes for improving the specific heterojunction electronic performance and the specific optoelectronics performance, such as "a method for improving the photoelectric response of a BFO/ZnO heterojunction device"

(CN110246958A), this case provides a specific solution for a ferroelectric thin film BFO/ZnO nanowire heterojunction device, which applies a compressive strain in the vertical direction to the device, and promotes the separation of carriers in the junction region of the BFO/ZnO heterojunction device by the piezoelectric potential generated when the nanowire is strained, thereby enhancing the photoelectric performance of the heterojunction device.

Rigid, thin film, pn junction devices are an important class of heterojunction devices. The rigidity mainly describes the characteristics of the substrate, compared with a flexible substrate, the rigid substrate has a smaller strain range, which means that the device can work in a small strain range, and the device can be complementary with a flexible substrate device with a larger strain range, so that the practical application scene is increased; the film mainly describes the type of a junction forming material of the heterojunction device, and the types of nanowires, nanorods and the like are optional besides the film, so that the introduction of the film can be compatible with the existing micro-nano processing technology, and the film material with stronger integrity is helpful for the accumulation of piezoelectric potential, so that the device has better piezoelectric electronics and piezoelectric photoelectron performance; the selection of the pn junction type is relative to the Schottky junction type of the same heterojunction, the junction forming effect of the pn junction type and the Schottky junction type is different, and the performances are obviously different in various aspects. In summary, the rigid, thin-film, pn junction type piezoelectric electronics and piezoelectric optoelectronics devices have the characteristics of excellent performance, strong integrity, close combination with the existing process, wide application scenes and the like, and have wide research prospects and higher application values.

Because no effective way for applying enough effective strain to rigid, thin-film, pn junction devices has been found, no cases have appeared for regulating the electronic and optoelectronic properties of rigid, thin-film, pn junction devices in the framework of piezoelectric electronics and piezoelectric optoelectronics, according to the description of the application data available at present.

Disclosure of Invention

In order to solve the problems in the prior art, the invention provides a method for regulating and controlling the electrical property and the photoelectric output of a p-Si/n-ZnO film heterojunction.

The technical scheme is as follows: the device comprises a cantilever beam type strain mechanism, the strain mechanism comprises a clamping piece structure and a motion structure, a p-Si/n-ZnO film heterojunction device is used as a cantilever beam, the motion structure comprises a tabletting device and a motion motor, the tabletting device can move along with the motion motor, the motion motor can accurately control the motion distance and realize locking and positioning, the motion motor controls the tabletting device to press downwards to cause the bending of the cantilever beam, the bending deformation of the cantilever beam can be equivalent to one part in the thickness direction of the p-Si/n-ZnO film heterojunction device, so that the longitudinal compressive strain is generated, the equivalent deformation can also be changed along with the change of the stroke of the motion motor, wherein the bottommost layer of the p-Si/n-ZnO film heterojunction device is a p-type silicon substrate, and then a ZnO film layer and an ITO film electrode II which are parallel and are not in contact with each other, and an ITO thin film electrode I is also attached above the ZnO thin film layer.

Preferably, the p-Si/n-ZnO thin film heterojunction device is tested by the following process: the optical fiber laser device comprises an iron stand, a strain mechanism, a laser, a shutter, a shell and a support, wherein the iron stand is fixed on an optical platform, the strain mechanism is arranged on the iron stand, the laser is arranged at the top of an electrical tester, the shutter is additionally arranged at an optical fiber outlet of the laser to rapidly control the on-off of an optical path, the shutter is connected with the optical fiber outlet in a covering mode through 3D printing, and the shutter is fixedly supported through the iron stand.

Preferably, the p-type silicon substrate is a 10mm × 10mm × 0.5mm p-doped silicon wafer, and is ultrasonically cleaned by deionized water, acetone and ethanol for 30 minutes and then dried by using a nitrogen gun to serve as the substrate for later use.

Preferably, the ZnO film layer, the ITO film electrode II and the ITO film electrode I are all prepared in a radio frequency magnetron sputtering mode.

Preferably, the preparation of the ZnO film layer comprises the steps of putting a p-type silicon substrate into a JGP-350B magnetron sputtering instrument vacuum cavity, wherein the target material is ZnO ceramic with the purity of 99.99 percent and the diameter of 6cm, closing the cavity and pumping the ZnO ceramic to 4 × 10 by using a mechanical pump and a molecular pump after covering a mask plate with a corresponding pattern on the p-type silicon substrate^-4And (3) carrying out background vacuum of Pa, introducing argon and oxygen according to the proportion of 40:2 after 5 times of argon gas scrubbing, keeping the air pressure of the cavity stable at 2.2Pa, rotating a revolution shaft to move a sample table away before formal sputtering is started so as to carry out pre-sputtering for 10min, then formally sputtering for 15min, wherein the pre-sputtering power and the formal sputtering power are both 80W, the substrate heating temperature is 500 ℃, and finally, naturally annealing the p-type silicon substrate and taking out.

Preferably, the preparation of the ITO thin film electrode II and the ITO thin film electrode I: putting a p-type silicon substrate into a vacuum cavity of a JGP-350B type magnetron sputtering instrument, wherein the target material is an ITO ceramic target material with the purity of 99.99 percent and the diameter of 6cm, the sputtering temperature is room temperature, introducing pure argon, keeping the cavity pressure at 2.2Pa, the sputtering power at 50W and the sputtering time duration at 10min, and finally, naturally annealing the p-type silicon substrate and taking out.

The force and light composite detector is obtained by utilizing the method for regulating and controlling the electrical property and the photoelectric output of the p-Si/n-ZnO film heterojunction.

The gate circuit is obtained by using the method for regulating and controlling the electrical property and the photoelectric output of the p-Si/n-ZnO film heterojunction.

The photovoltaic device is obtained by utilizing the method for regulating and controlling the electrical property and the photoelectric output of the p-Si/n-ZnO film heterojunction.

The invention has the beneficial effects that:

1. the invention prepares a high-quality p-Si/n-ZnO film heterojunction device, and provides a scheme for regulating and controlling the electronic and optoelectronic properties of the p-Si/n-ZnO film heterojunction device in the framework of piezoelectric electronics and piezoelectric optoelectronics, thereby widening the application range of the piezoelectric electronics and the piezoelectric optoelectronics to a certain extent;

2. the gate circuit is a unit circuit for realizing basic logic operation and composite logic operation, and a typical scene in a piezoelectric electronics theory system is the gate circuit;

3. the p-Si/n-ZnO device has obvious response to force and light at the same time, can be used as a novel force and light composite detector, and a single device can carry out strain/stress detection and light detection;

4. the p-Si/n-ZnO device can be used as a photovoltaic device, the photovoltaic performance of the device can be directionally improved by applying fixed strain to the device by using the strain mechanism, the basic structure of the device is not changed, and the device can be suitable for any traditional application scene.

Drawings

FIG. 1: the invention provides a schematic diagram of a strain mechanism based on a cantilever beam structure.

FIG. 2: the invention provides a working schematic diagram of a strain mechanism based on a cantilever beam structure.

FIG. 3: the invention provides a structural schematic diagram of a p-Si/n-ZnO thin film heterojunction device.

FIG. 4: the invention provides a cross-sectional view of a p-Si/n-ZnO thin film heterojunction device.

FIG. 5: the invention provides an XRD test pattern of a ZnO film.

FIG. 6: the invention provides a ZnO film scanning electron microscope photo, wherein a: plan view, b: cross section.

FIG. 7: the invention provides a ZnO + ITO film scanning electron microscope photo, wherein a: plan view, b: cross section.

FIG. 8: the invention provides the strain condition of a strain mechanism when the stroke of a motion motor is 0.2 mm.

FIG. 9: the invention provides a relation between the stroke of a motion motor and the average working strain of a device.

FIG. 10: the invention provides a schematic diagram of a piezoelectric electronics/optoelectronics test platform.

FIG. 11: the invention provides a device IV curve for applying different strains in the dark state.

FIG. 12: the invention provides a device IV curve for applying different strains under 405nm laser irradiation.

In the figure: the device comprises a 1-strain mechanism, a 2-clamping piece structure, a 3-motion structure, a 4-p-Si/n-ZnO thin film heterojunction device, a 5-p type silicon substrate, a 6-ZnO thin film layer, a 7-ITO thin film electrode II, an 8-ITO thin film electrode I, a 9-iron stand, a 10-laser, a 11-electrical tester and a 12-shutter.

Detailed Description

In order to better understand the invention, the following description of the implementation of the example further illustrate the content of the invention, but the content of the invention is not limited to the following embodiments.