阅读说明：本技术 光电探测器及其制备方法、触控基板和显示面板 (Photoelectric detector, manufacturing method thereof, touch substrate and display panel ) 是由 李达 张硕 陈江博 李凡 孟凡理 梁魁 于 2020-06-15 设计创作，主要内容包括：本发明实施例提供一种光电探测器及其制备方法、触控基板和显示面板,光电探测器包括依次层叠设置的基底、缓冲层、金属层、绝缘层及半导体层,金属层包括第一金属电极和第二金属电极,第一金属电极和第二金属电极之间的缓冲层上形成有凹槽,绝缘层覆盖金属层,且填充凹槽。本发明实施例即便在形成第一金属电极和第二金属电极的过程中对缓冲层溅射入金属原子,由于凹槽和填充的绝缘层使第一金属电极和第二金属电极之间不再仅由缓冲层连接,可以使第一金属电极和第二金属电极之间金属原子形成的漏电流减小或无漏电流,实现了有效减小第一金属电极和第二金属电极之间的偏压暗电流。(The embodiment of the invention provides a photoelectric detector and a preparation method thereof, a touch substrate and a display panel. Even if metal atoms are sputtered to the buffer layer in the process of forming the first metal electrode and the second metal electrode, the groove and the filled insulating layer enable the first metal electrode and the second metal electrode to be no longer connected only by the buffer layer, so that leakage current formed by the metal atoms between the first metal electrode and the second metal electrode can be reduced or no leakage current is generated, and bias dark current between the first metal electrode and the second metal electrode is effectively reduced.)

1. The utility model provides a photoelectric detector which characterized in that, includes the basement, buffer layer, metal level, insulating layer and the semiconductor layer that stack gradually the setting, the metal level includes first metal electrode and second metal electrode, first metal electrode with between the second metal electrode be formed with the recess on the buffer layer, the insulating layer covers the metal level, and fill the recess.

2. The photodetector of claim 1, wherein a length of the groove in a first direction perpendicular to a center line direction between the first metal electrode and the second metal electrode is less than or equal to a spacing between the first metal electrode and the second metal electrode.

3. The photodetector of claim 2, wherein a length of the groove in a second direction perpendicular to the first direction is greater than or equal to a length of one of the first metal electrode and the second metal electrode.

4. The photodetector of claim 3, wherein the depth of the groove in a third direction perpendicular to the first and second directions is in a range of 50nm to 100 nm.

5. The photodetector of claim 4, wherein the thickness of the insulating layer on the first and second metal electrodes in the third direction is in a range of 20nm to 100 nm.

6. A touch substrate comprising the photodetector of any one of claims 1 to 5.

7. A display panel comprising the touch substrate according to claim 6.

8. A method of fabricating a photodetector, comprising:

providing a substrate;

forming a buffer layer on the substrate;

forming a metal layer on the buffer layer;

patterning the metal layer to form a first metal electrode and a second metal electrode, and forming a groove on the buffer layer between the first metal electrode and the second metal electrode;

forming an insulating layer, wherein the insulating layer covers the metal layer and fills the groove;

a semiconductor layer is formed on the insulating layer.

9. The method according to claim 8, wherein the patterning the metal layer to form a first metal electrode and a second metal electrode, and forming a groove on the buffer layer between the first metal electrode and the second metal electrode comprises:

forming a first photoresist layer on the metal layer;

exposing and developing the first photoresist layer to form a patterned second photoresist layer;

etching the patterned second photoresist layer and the metal layer to form the first metal electrode and the second metal electrode;

and etching the buffer layer between the first metal electrode and the second metal electrode to form the groove.

10. The method according to claim 8, wherein the etching the patterned second photoresist layer and the metal layer to form the first metal electrode and the second metal electrode, and the etching the buffer layer between the first metal electrode and the second metal electrode to form the groove comprises:

etching the patterned second photoresist layer and the metal layer to form the first metal electrode and the second metal electrode with a third photoresist layer on the top surface;

and etching the third photoresist layer and the buffer layer between the first metal electrode and the second metal electrode.

Technical Field

The invention relates to the technical field of display, in particular to a photoelectric detector, a preparation method of the photoelectric detector, a touch substrate and a display panel.

Background

The photoelectric detector can be realized by a semiconductor manufacturing process, the photoelectric detector has the advantages of high speed, low capacitance, simple manufacturing process and the like, and in the prior art, a metal electrode of the photoelectric detector is usually formed by a sputtering process.

However, the photodetector formed by the prior art after the metal electrode is formed by the Sputter process has the following defects: in the process of forming the metal electrode of the metal layer of the photoelectric detector, metal atoms are sputtered into the previous film layer, and for the photoelectric detector with Schottky barrier as carrier limitation, after a certain bias voltage is applied to the metal electrode, because the barrier height is pulled down by the action of mirror image force, carriers (including the metal atoms of the previous film layer) can easily cross the barrier, so that the bias dark current between the metal electrodes of the photoelectric detector is very large. For example, as shown in fig. 1, in the dark state, the dark current of the photodetector after the metal electrode is formed by the prior art Sputter process increases rapidly with the increase of the bias voltage, where 1' is the I (current) -V (voltage) characteristic curve of the photodetector in the dark state after the metal electrode is formed by the prior art Sputter process.

Disclosure of Invention

In view of the foregoing problems, an embodiment of the present invention provides a photodetector, a method for manufacturing the photodetector, a touch substrate and a display panel, so as to solve the problem that the bias dark current between metal electrodes of the photodetector formed by the Sputter process is large.

In order to solve the above problems, an embodiment of the present invention discloses a photodetector, which includes a substrate, a buffer layer, a metal layer, an insulating layer, and a semiconductor layer, which are sequentially stacked, where the metal layer includes a first metal electrode and a second metal electrode, a groove is formed on the buffer layer between the first metal electrode and the second metal electrode, and the insulating layer covers the metal layer and fills the groove.

In order to solve the above problem, an embodiment of the present invention further discloses a touch substrate, including the photodetector.

In order to solve the above problem, an embodiment of the present invention further discloses a display panel, including the touch substrate.

In order to solve the above problem, an embodiment of the present invention further discloses a method for manufacturing a photodetector, including: providing a substrate; forming a buffer layer on the substrate; forming a metal layer on the buffer layer; patterning the metal layer to form a first metal electrode and a second metal electrode, and forming a groove on the buffer layer between the first metal electrode and the second metal electrode; forming an insulating layer, wherein the insulating layer covers the metal layer and fills the groove; a semiconductor layer is formed on the insulating layer.

The embodiment of the invention has the following advantages: a groove is formed on the buffer layer between the first metal electrode and the second metal electrode, the metal layer is covered by the insulating layer, and the groove is filled. Therefore, even if metal atoms are sputtered into the buffer layer in the process of forming the first metal electrode and the second metal electrode, the groove between the first metal electrode and the second metal electrode is filled with the insulating layer, the groove and the filled insulating layer enable the first metal electrode and the second metal electrode not to be connected only by the buffer layer any more, after bias voltage is applied to the first metal electrode and the second metal electrode, leakage current formed by the metal atoms between the first metal electrode and the second metal electrode is reduced or no leakage current exists, and bias dark current between the first metal electrode and the second metal electrode is effectively reduced.

Drawings

FIG. 1 is a schematic diagram of the I-V characteristic curve of a photodetector after a metal electrode is formed by a shower process in the prior art;

FIG. 2 is a schematic diagram of a photodetector embodiment of the present invention;

FIG. 3 is an enlarged schematic view of the location 60 of FIG. 2;

FIG. 4 is a schematic diagram of a structure of a photodetector with an insulating layer and without a groove;

FIG. 5 is a schematic illustration of the I-V characteristic curve in the dark state for one embodiment of the photodetector of the present invention;

FIG. 6 is a schematic illustration of the I-V characteristic of an embodiment of a photodetector of the present invention in an optical state;

FIG. 7 is a flow chart illustrating the steps of one embodiment of a method of fabricating a photodetector of the present invention;

FIG. 8 is a flow chart of steps in another embodiment of a method of fabricating a photodetector of the present invention.

Detailed Description

In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.

Referring to fig. 2, which shows a schematic structural diagram of an embodiment of a photodetector of the present invention, specifically, the embodiment may include a substrate 10, a buffer layer 20, a metal layer 30, an insulating layer 40, and a semiconductor layer 50, which are sequentially stacked, as shown in fig. 2 and fig. 3, the metal layer 30 may include a first metal electrode 31 and a second metal electrode 32, a groove 21 is formed on the buffer layer 20 between the first metal electrode 31 and the second metal electrode 32, and the insulating layer 40 covers the metal layer 30 and fills the groove 21. Fig. 3 is an enlarged schematic view of a position 60 in fig. 2.

Specifically, the photodetector according to the embodiment of the present invention may be any photodetector that uses a schottky barrier as a carrier confinement, such as an MSM (Metal-semiconductor-Metal) photodetector.

In the process of forming the metal layer 30, metal atoms are sputtered into the buffer layer 20, and at this time, if the semiconductor layer 50 is continuously formed on the metal layer 30 to obtain the photodetector, a leakage path exists between the first metal electrode 31 and the second metal electrode 32, and when a bias is applied to the first metal electrode 31 and the second metal electrode 32, the metal atoms in the buffer layer 20 between the first metal electrode 31 and the second metal electrode 32 move along the leakage path, and a leakage current (dark current) is formed between the first metal electrode 31 and the second metal electrode 32.

After the groove 21 is formed on the buffer layer 20 between the first metal electrode 31 and the second metal electrode 32, the metal layer 30 is covered by the insulating layer 40, and the groove 21 is filled, even if metal atoms are sputtered into the buffer layer 20 in the process of forming the first metal electrode 31 and the second metal electrode 32, since the position of the groove 21 between the first metal electrode 31 and the second metal electrode 32 is filled by the insulating layer 40, the groove 21 and the filled insulating layer 40 enable the first metal electrode 31 and the second metal electrode 32 to be partially or completely connected by the insulating layer 40, and the leakage path between the first metal electrode 31 and the second metal electrode 32 is partially or completely eliminated. When the first metal electrode 31 and the second metal electrode 32 are biased, the leakage current formed by the metal atoms between the first metal electrode 31 and the second metal electrode 32 is reduced or no leakage current is generated.

Alternatively, as shown in fig. 2, the first metal electrode 31 and the second metal electrode 32 may be plural, and the plural first metal electrodes 31 and the plural second metal electrodes 32 may be disposed in an array structure, wherein the first metal electrodes 31 and the second metal electrodes 32 in the same row are adjacent to each other and may be disposed at equal intervals.

Alternatively, when a bias is applied to the first metal electrode 31 and the second metal electrode 32, if the first metal electrode 31 is an electrode to which the bias is applied, the second metal electrode 32 may be an electrode for collecting current (photocurrent or dark current); on the contrary, if the second metal electrode 32 is an electrode to which a bias voltage is applied, the first metal electrode 31 may be an electrode for collecting a current (a photocurrent or a dark current). Therefore, the photocurrent can be obtained in the light state and the dark current can be obtained in the dark state by collecting the current of the corresponding metal electrode.

Fig. 4 is a schematic structural diagram of a photodetector formed after the buffer layer 20 between the first metal electrode 31 and the second metal electrode 32 has no groove 21 and the insulating layer 40 covers the metal layer 30. As shown in fig. 5, in the dark state, in the same bias voltage range (for example, 20V to 25V), the dark current in the photodetector according to the embodiment of the present invention is smaller than the dark current of the photodetector after the metal electrode is formed by the Sputter process in the prior art and the dark current of the photodetector in fig. 4 by one order of magnitude, that is, the dark current in the photodetector according to the embodiment of the present invention is effectively reduced. Fig. 5 shows a dark current curve 1' of the photodetector after the metal electrode is formed by the Sputter process in the prior art, a dark current curve 1 of the photodetector in fig. 4, and a dark current curve 2 of the photodetector according to the embodiment of the present invention. In addition, as shown in fig. 6, in a light state, in the same bias voltage range (for example, 20V to 25V), the photocurrent of the photodetector according to the embodiment of the present invention is in an order of magnitude as the photocurrent of the photodetector after the metal electrode is formed by the Sputter process in the prior art, and the photocurrent of the photodetector in fig. 4 is not in an order of magnitude as the photocurrent of the photodetector formed by the Sputter process in the prior art, that is, the photodetector according to the embodiment of the present invention has substantially no influence on the photocurrent, and compared with the photodetector after the metal electrode is formed by the Sputter process in the prior art and the photodetector in fig. 4, the photodetector according to the embodiment of the present invention has a better dark current ratio. Fig. 6 shows a photocurrent curve 2' of the photodetector after the metal electrode is formed by the Sputter process in the prior art, a photocurrent curve 3 of the photodetector in fig. 4, and a photocurrent curve 4 of the photodetector according to the embodiment of the present invention.

Alternatively, the length of the groove 21 in the first direction perpendicular to the center line direction between the first metal electrode 31 and the second metal electrode 32 may be less than or equal to the interval between the first metal electrode 31 and the second metal electrode 32. At this time, if the length of the groove 21 in the second direction is smaller than the length of either one of the first metal electrode 31 and the second metal electrode 32, and the second direction is perpendicular to the first direction, after the insulating layer 40 fills the groove 21, a portion between the first metal electrode 31 and the second metal electrode 32 is connected by the insulating layer 40, and a portion is still connected by the buffer layer 20, so that a leakage path between the first metal electrode 31 and the second metal electrode 32 is partially eliminated, and when a bias is applied to the first metal electrode 31 and the second metal electrode 32, a leakage current formed by metal atoms between the first metal electrode 31 and the second metal electrode 32 is reduced. In addition, if the length of the groove 21 in the second direction is greater than or equal to the length of one of the first metal electrode 31 and the second metal electrode 32, and the second direction is perpendicular to the first direction, after the insulating layer 40 fills the groove 21, the first metal electrode 31 and the second metal electrode 32 are all connected by the insulating layer 40, the insulating layer 40 breaks all leakage paths between the first metal electrode 31 and the second metal electrode 32, and no leakage current flows between the first metal electrode 31 and the second metal electrode 32 after the first metal electrode 31 and the second metal electrode 32 are biased.

Alternatively, the depth of the groove 21 in the third direction perpendicular to the first and second directions may range from 50nm to 100 nm. Thereby ensuring that the insulating layer 40 can break the entire leakage path between the first metal electrode 31 and the second metal electrode 32, ensuring no leakage current between the first metal electrode 31 and the second metal electrode 32.

Alternatively, the thickness of the insulating layer 40 on the first and second metal electrodes 31 and 32 in the third direction may range from 20nm to 100 nm. Thereby ensuring that the insulating layer 40 covers the metal layer 30 and fills the recess 21 while also increasing the height of the potential barrier for confining carriers in the photodetector.

Alternatively, in an embodiment of the present invention, the semiconductor layer 50 may be a semiconductor layer 50 formed of a-Si (amorphous silicon) or a semiconductor layer 50 formed of other materials, which is not limited by the present invention. Alternatively, the substrate 10 may be a glass substrate. Alternatively, the buffer layer 20 may be a buffer layer 20 formed of an insulating material or other materials, which is not limited in the present invention. Alternatively, the metal layer 30 may be a metal layer 30 formed of CU (copper) or other materials, which is not limited by the present invention.

The photoelectric detector of the embodiment of the invention has the following advantages: a groove is formed in the buffer layer between the first metal electrode and the second metal electrode, the metal layer is covered by the insulating layer, and the groove is filled, wherein the length of the groove in the first direction is smaller than or equal to the distance between the first metal electrode and the second metal electrode, and the length of the groove in the second direction is larger than or equal to the length of one of the first metal electrode and the second metal electrode. Therefore, even if metal atoms are sputtered into the buffer layer in the process of forming the first metal electrode and the second metal electrode, because the position of the groove between the first metal electrode and the second metal electrode is filled by the insulating layer, the groove and the filled insulating layer enable the first metal electrode and the second metal electrode to be partially or completely connected by the insulating layer, the leakage path between the first metal electrode and the second metal electrode is partially or completely eliminated, and after bias voltage is applied to the first metal electrode and the second metal electrode, the leakage current formed by the metal atoms between the first metal electrode and the second metal electrode is reduced or no leakage current exists, so that the bias dark current of the photoelectric detector is effectively reduced; in addition, the photoelectric detector provided by the embodiment of the invention basically has no influence on photocurrent, and has a good light-dark current ratio.

The embodiment of the invention also discloses a touch substrate which comprises the photoelectric detector.

The touch substrate of the embodiment of the invention has the following advantages: a groove is formed in a buffer layer between a first metal electrode and a second metal electrode of a photoelectric detector, a metal layer is covered by an insulating layer, and the groove is filled, wherein the length of the groove in a first direction is smaller than or equal to the distance between the first metal electrode and the second metal electrode, and the length of the groove in a second direction is larger than or equal to the length of one of the first metal electrode and the second metal electrode. Therefore, even if metal atoms are sputtered into the buffer layer in the process of forming the first metal electrode and the second metal electrode, because the position of the groove between the first metal electrode and the second metal electrode is filled by the insulating layer, the groove and the filled insulating layer enable the first metal electrode and the second metal electrode to be partially or completely connected by the insulating layer, the leakage path between the first metal electrode and the second metal electrode is partially or completely eliminated, and after bias voltage is applied to the first metal electrode and the second metal electrode, the leakage current formed by the metal atoms between the first metal electrode and the second metal electrode is reduced or no leakage current exists, so that the bias dark current of the photoelectric detector is effectively reduced; in addition, the photoelectric detector provided by the embodiment of the invention basically has no influence on photocurrent, and has a good light-dark current ratio.

The embodiment of the invention also discloses a display panel which comprises the touch substrate.

The display panel of the embodiment of the invention has the following advantages: a groove is formed in a buffer layer between a first metal electrode and a second metal electrode in a photoelectric detector of a touch substrate, a metal layer is covered by an insulating layer, and the groove is filled, wherein the length of the groove in a first direction is smaller than or equal to the distance between the first metal electrode and the second metal electrode, and the length of the groove in a second direction is larger than or equal to the length of one of the first metal electrode and the second metal electrode. Therefore, even if metal atoms are sputtered into the buffer layer in the process of forming the first metal electrode and the second metal electrode, because the position of the groove between the first metal electrode and the second metal electrode is filled by the insulating layer, the groove and the filled insulating layer enable the first metal electrode and the second metal electrode to be partially or completely connected by the insulating layer, the leakage path between the first metal electrode and the second metal electrode is partially or completely eliminated, and after bias voltage is applied to the first metal electrode and the second metal electrode, the leakage current formed by the metal atoms between the first metal electrode and the second metal electrode is reduced or no leakage current exists, so that the bias dark current of the photoelectric detector is effectively reduced; in addition, the photoelectric detector provided by the embodiment of the invention basically has no influence on photocurrent, and has a good light-dark current ratio.

Referring to fig. 7, a flowchart illustrating steps of an embodiment of a method for manufacturing a photodetector according to the present invention is shown, which may specifically include the following steps:

step 10, providing a substrate.

Step 20, forming a buffer layer on the substrate.

Specifically, step 20 may deposit a buffer layer on the substrate.

Step 30, forming a metal layer on the buffer layer.

In particular, step 30 may deposit a metal layer on the buffer layer.

And step 40, patterning the metal layer to form a first metal electrode and a second metal electrode, and forming a groove on the buffer layer between the first metal electrode and the second metal electrode.

Alternatively, as shown in fig. 8, the step 40 of patterning the metal layer to form a first metal electrode and a second metal electrode, and forming a groove on the buffer layer between the first metal electrode and the second metal electrode may include:

step 41, a first photoresist layer is formed on the metal layer.

Specifically, step 41 may coat a photoresist on the metal layer to form a first photoresist layer.

And step 42, exposing and developing the first photoresist layer to form a patterned second photoresist layer.

Specifically, step 42 may form a patterned second photoresist layer by exposing and developing the first photoresist layer using a MASK (photo MASK).

And 43, etching the patterned second photoresist layer and the metal layer to form a first metal electrode and a second metal electrode.

In particular, step 43 may employ a dry etching technique to etch the patterned second photoresist layer and the metal layer.

In step 43, during the process of forming the first metal electrode and the second metal electrode, metal atoms are sputtered into the buffer layer.

And 44, etching the buffer layer between the first metal electrode and the second metal electrode to form a groove.

Specifically, step 44 may employ a dry etching technique to etch the buffer layer between the first metal electrode and the second metal electrode.

Optionally, the step 43 of etching the patterned second photoresist layer and the metal layer to form a first metal electrode and a second metal electrode, and the step 44 of etching the buffer layer between the first metal electrode and the second metal electrode to form a groove may include:

and step 45, etching the patterned second photoresist layer and the metal layer to form a first metal electrode and a second metal electrode with top surfaces provided with a third photoresist layer.

Optionally, in the step 45, during the etching of the patterned second photoresist layer and the patterned metal layer, the second photoresist layer on the top surfaces of the first metal electrode and the second metal electrode may be reserved as a third photoresist layer, or the second photoresist layer on the top surfaces of the first metal electrode and the second metal electrode may be thinned to form the third photoresist layer.

Step 46, etching the third photoresist layer and the buffer layer between the first metal electrode and the second metal electrode.

Not only can the recess be formed, but it can also be ensured that the top surfaces of the first metal electrode and the second metal electrode are not etched, via step 46.

Optionally, after the step 46 of etching the third photoresist layer and the buffer layer between the first metal electrode and the second metal electrode, the method for manufacturing a photodetector according to the embodiment of the present invention may further include:

step 47, a photoresist layer removing process and a baking process are performed.

Excess photoresist may be removed, via step 47.

And step 50, forming an insulating layer, wherein the insulating layer covers the metal layer and fills the groove.

Step 60, a semiconductor layer is formed on the insulating layer.

Specifically, the insulating layer and the semiconductor layer may be simultaneously deposited using a PECVD (Plasma Enhanced chemical vapor Deposition) process, i.e., step 50 and step 60 may be performed simultaneously.

Through the steps 10 to 50, the photodetector in fig. 2 can be formed, and the formation of the photodetector in fig. 2 can be realized only by carrying out exposure and development once, so that the process is simple to realize, and the mass production of the photodetector is convenient to realize.

The preparation method of the photoelectric detector provided by the embodiment of the invention has the following advantages: after the metal layer is subjected to patterning treatment, a groove is formed in the buffer layer between the first metal electrode and the second metal electrode, the insulating layer covers the metal layer and fills the groove, the length of the groove in the first direction is smaller than or equal to the distance between the first metal electrode and the second metal electrode, the length of the groove in the second direction is larger than or equal to the length of one of the first metal electrode and the second metal electrode, and the metal layer is subjected to patterning treatment only through exposure and development once. Therefore, even if metal atoms are sputtered into the buffer layer in the process of forming the first metal electrode and the second metal electrode, because the position of the groove between the first metal electrode and the second metal electrode is filled by the insulating layer, the groove and the filled insulating layer enable the first metal electrode and the second metal electrode to be partially or completely connected by the insulating layer, the leakage path between the first metal electrode and the second metal electrode is partially or completely eliminated, and after bias voltage is applied to the first metal electrode and the second metal electrode, the leakage current formed by the metal atoms between the first metal electrode and the second metal electrode is reduced or no leakage current exists, so that the bias dark current of the photoelectric detector is effectively reduced; in addition, the photoelectric detector provided by the embodiment of the invention basically has no influence on photocurrent, and has a good light-dark current ratio; moreover, the patterning treatment of the metal layer only needs one exposure and development, so that the realization process is simple, and the mass production of the photoelectric detector is facilitated.

It should be noted that, for simplicity of description, the method embodiments are described as a series of acts or combination of acts, but those skilled in the art will recognize that the present invention is not limited by the illustrated order of acts, as some steps may occur in other orders or concurrently in accordance with the embodiments of the present invention. Further, those skilled in the art will appreciate that the embodiments described in the specification are presently preferred and that no particular act is required to implement the invention.

For the touch substrate and the display panel embodiment, since the touch substrate and the display panel include the photodetector, the description is relatively simple, and the relevant points can be referred to the partial description of the photodetector embodiment.

For the embodiment of the manufacturing method of the photodetector, since it is basically similar to the embodiment of the photodetector, the description is simple, and the relevant points can be referred to the partial description of the embodiment of the photodetector.

The embodiments in the present specification are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.

As will be appreciated by one skilled in the art, embodiments of the present invention may be provided as a method, apparatus, or computer program product. Accordingly, embodiments of the present invention may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, embodiments of the present invention may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.

Embodiments of the present invention are described with reference to flowchart illustrations and/or block diagrams of methods, terminal devices (systems), and computer program products according to embodiments of the invention. It will be understood that each flow and/or block of the flow diagrams and/or block diagrams, and combinations of flows and/or blocks in the flow diagrams and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing terminal to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing terminal, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.

These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing terminal to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.

These computer program instructions may also be loaded onto a computer or other programmable data processing terminal to cause a series of operational steps to be performed on the computer or other programmable terminal to produce a computer implemented process such that the instructions which execute on the computer or other programmable terminal provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.

While preferred embodiments of the present invention have been described, additional variations and modifications of these embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the embodiments of the invention.

Finally, it should also be noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or terminal that comprises the element.

The present invention provides a photodetector, a method for manufacturing a photodetector, a touch substrate and a display panel, which are described in detail above, and the principles and embodiments of the present invention are explained herein by using specific examples, and the descriptions of the above examples are only used to help understand the method and the core ideas of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.