阅读说明：本技术 偏振片及制备方法 (Polarizing plate and preparation method thereof ) 是由 郭康 马啸尘 张笑 路彦辉 谷新 于 2020-06-22 设计创作，主要内容包括：本文公开了一种偏振片及制备方法,涉及但不限于显示技术领域。偏振片包括：衬底和设置于衬底上的偏振层,偏振层包括沿第一方向延伸并沿第二方向间隔设置的多个条状线栅和设置于相邻条状线栅之间的支撑条,支撑条与相邻的条状线栅连接,第一方向与第二方向交叉。本文通过在相邻的条状线栅之间连接支撑条,支撑条可以支撑条状线栅,以加固条状线栅,防止条状线栅在制备过程中出现倒伏,提升偏振片光学偏振度和透光率。(Disclosed herein are a polarizer and a preparation method thereof, relating to but not limited to the technical field of display. The polarizing plate includes: the substrate with set up the polarization layer on the substrate, the polarization layer includes along a plurality of strip wire grids that first direction extension and edge second direction interval set up and sets up the support bar between adjacent strip wire grid, the support bar is connected with adjacent strip wire grid, first direction and second direction are alternately. This paper is through connecting the support bar between adjacent strip wire grid, and the support bar can support strip wire grid to consolidate strip wire grid, prevent that strip wire grid from appearing lodging in the preparation process, promote polaroid optical polarization degree and luminousness.)

1. A polarizing plate, comprising: the substrate with set up in polarizing layer on the substrate, polarizing layer includes along the first direction extension and along a plurality of strip wire grids that second direction interval set up and set up in adjacent support bar between the strip wire grid, the support bar is with adjacent the strip wire grid is connected, the first direction with the second direction is alternately.

2. The polarizing plate according to claim 1, wherein: and the supporting strips extend along the second direction and are arranged at intervals along the first direction between every two adjacent strip-shaped wire grids.

3. The polarizing plate according to claim 2, wherein: the spacing between adjacent support bars is 100 micrometers to 1000 micrometers.

4. The polarizing plate according to claim 1, wherein: in the first direction, the width of the supporting strip is 1-6 micrometers.

5. The polarizing plate according to claim 1, wherein: in the direction perpendicular to the substrate, the height of the strip-shaped wire grid is larger than or equal to that of the supporting bars.

6. The polarizing plate according to any one of claims 1 to 5, wherein: the first direction is perpendicular to the second direction.

7. The polarizing plate according to any one of claims 1 to 5, wherein: the height of the wire grid strip is 100 nm to 300 nm in a direction perpendicular to the substrate, and the width of the wire grid strip is 40 nm to 80 nm in the second direction.

8. The polarizing plate according to claim 7, wherein: the height-to-width ratio of the striped wire grid is 1.25 to 7.5, and the height-to-width ratio is the ratio of the height to the width of the striped wire grid.

9. The polarizing plate according to any one of claims 1 to 5, wherein: the distance between the adjacent strip-shaped wire grids is 40 nanometers to 80 nanometers.

10. A method for producing a polarizing plate, comprising:

forming a polarization layer on the substrate, the polarization layer includes a plurality of strip-shaped wire grids extending along a first direction and arranged at intervals along a second direction and a support bar arranged between the adjacent strip-shaped wire grids, the support bar is connected with the adjacent strip-shaped wire grids, and the first direction is crossed with the second direction.

11. The method of manufacturing according to claim 10, wherein: forming a polarizing layer on a substrate, comprising:

forming a patterned layer on a substrate;

forming a plurality of stamping strips on the patterned layer, wherein the plurality of stamping strips extend along a first direction and are arranged at intervals along a second direction;

forming a plurality of sacrificial strips on the plurality of stamping strips and the patterning layer, wherein the sacrificial strips extend along a second direction and are arranged at intervals along a first direction;

etching the sacrificial strip and the patterning layer which is not covered by the imprinting strip and the sacrificial strip through an etching process;

and stripping the imprinting strip to form a polarization layer, forming a strip-shaped wire grid with the patterning layer at the position corresponding to the imprinting strip, and forming a support strip with the patterning layer at the position corresponding to the sacrificial strip.

12. The method of claim 11, wherein: forming a plurality of imprinting strips on the patterned layer, comprising:

forming an imprinting layer on the patterned layer;

and forming an embossing pattern on the embossing layer in an embossing mode, wherein the embossing pattern comprises a plurality of embossing strips which extend along the first direction and are arranged at intervals along the second direction.

13. The method of claim 11, wherein: forming a plurality of sacrificial strips over a plurality of said imprinting strips and said patterned layer, comprising:

forming a photoresist layer covering the plurality of imprinting strips, exposing the photoresist layer by using a mask plate, and developing to form a photoresist pattern, wherein the photoresist pattern comprises a plurality of photoresist grooves extending along a second direction and arranged at intervals along a first direction, and the photoresist grooves expose the imprinting strips and the patterning layer;

forming a sacrificial film covering the photoresist layer and the photoresist groove;

and stripping the photoresist layer to enable the sacrificial film in the photoresist groove to form sacrificial strips, wherein the sacrificial strips extend along the second direction and are arranged at intervals along the first direction.

14. The method of claim 11, wherein: in the first direction, the width of the sacrificial strips is 100 micrometers to 300 micrometers, and the distance between the adjacent sacrificial strips is 100 micrometers to 1000 micrometers.

Technical Field

The present application relates to, but not limited to, the field of display technologies, and in particular, to a polarizer and a method for manufacturing the same.

Background

A Wire Grid Polarizer (WGP) refers to a metal Wire Grid distributed on a transparent substrate and having a period much shorter than the wavelength of incident light, and when Transverse Electric (TE) polarized light with a polarization direction parallel to the Wire Grid is incident on the surface of the metal Wire Grid, electrons are caused to freely oscillate along the direction of the metal Wire Grid, and the TE polarized light is reflected by the Grid surface of the metal Wire 1; for Transverse Magnetic (TM) polarized light with a polarization direction perpendicular to the metallic wire grid, since the linewidth of the metallic wire grid is much smaller than the wavelength of the incident light wave, the electronic oscillation in this direction is limited and the TM polarized light will be directly transmitted.

In order to realize the high polarization characteristic of the WGP, thereby greatly improving the contrast of the display device, the height of the metal wire grid can be increased. However, in the actual WGP production process, as the height of the wire grid increases, the wire grid becomes lodged, decreasing the optical polarization degree and light transmittance of the polarizer.

Disclosure of Invention

The following is a summary of the subject matter described in detail herein. This summary is not intended to limit the scope of the claims.

The embodiment of the application provides a polaroid and a preparation method, and the wire grid of the polaroid can be effectively prevented from falling.

The polaroid that this application embodiment provided includes the substrate and sets up the polarization layer on the substrate, and the polarization layer includes along the first direction extension and along a plurality of strip wire grids that the second direction interval set up and set up in adjacent support bar between the strip wire grid, the support bar is connected with adjacent strip wire grid, and first direction is crossing with the second direction.

In an exemplary embodiment, between each adjacent striped wire grid, the support bars extend along the second direction and are spaced along the first direction.

In an exemplary embodiment, the spacing between adjacent support bars is 100 microns to 1000 microns.

In an exemplary embodiment, the supporting bars have a width of 1 to 6 micrometers in the first direction.

In an exemplary embodiment, the height of the striped wire grid in the direction perpendicular to the substrate is greater than or equal to the height of the support bars.

In an exemplary embodiment, the first direction is perpendicular to the second direction.

In an exemplary embodiment, the height of the wire grid strip in the direction perpendicular to the substrate is 100 nm to 300 nm, and the width of the wire grid strip in the second direction is 40 nm to 80 nm.

In an exemplary embodiment, the aspect ratio of the striped wire grid is 1.25 to 7.5, and the aspect ratio is a ratio of the height to the width of the striped wire grid.

In an exemplary embodiment, a pitch between adjacent striped wire grids is 40 to 80 nanometers.

The preparation method of the polaroid provided by the embodiment of the application comprises the following steps:

form the polarization layer on the substrate, the polarization layer includes along the extension of first direction and along a plurality of strip wire grids of second direction interval setting and set up the support bar between adjacent strip wire grids, and the support bar is connected with adjacent strip wire grid, and first direction and second direction are alternately crossed.

In an exemplary embodiment, forming a polarizing layer on a substrate includes:

forming a patterned layer on a substrate;

forming a plurality of stamping strips on the patterning layer, wherein the plurality of stamping strips extend along a first direction and are arranged at intervals along a second direction;

forming a plurality of sacrificial strips on the plurality of stamping strips and the patterning layer, wherein the plurality of sacrificial strips extend along the second direction and are arranged at intervals along the first direction;

etching the sacrificial strips and the patterning layer which is not covered by the imprinting strips and the sacrificial strips through an etching process;

stripping the stamping bar to form a polarization layer, forming a strip-shaped wire grid with the patterning layer at the position corresponding to the stamping bar, and forming a support bar with the patterning layer at the position corresponding to the sacrificial bar.

In an exemplary embodiment, forming a plurality of stamp strips on the patterned layer includes:

forming an imprinting layer on the patterned layer;

and forming an embossing pattern on the embossing layer by adopting an embossing mode, wherein the embossing pattern comprises a plurality of embossing strips which extend along the first direction and are arranged at intervals along the second direction.

In an exemplary embodiment, forming a plurality of sacrificial strips over the plurality of imprinting strips and the patterned layer includes:

forming a photoresist layer covering the plurality of imprinting strips, exposing the photoresist layer by using a mask plate, and forming a photoresist pattern after developing, wherein the photoresist pattern comprises a plurality of photoresist grooves which extend along the second direction and are arranged at intervals along the first direction, and the imprinting strips and the patterning layer are exposed out of the photoresist grooves;

forming a sacrificial film covering the photoresist layer and the photoresist groove;

and stripping the photoresist layer to enable the sacrificial film in the photoresist groove to form sacrificial strips, wherein the sacrificial strips extend along the second direction and are arranged at intervals along the first direction.

In an exemplary embodiment, the width of the sacrificial strips is 100 to 300 microns and the spacing between adjacent sacrificial strips is 100 to 1000 microns in the first direction.

The polaroid and the preparation method provided by the embodiment of the application can support the strip-shaped wire grids by connecting the support bars between the adjacent strip-shaped wire grids so as to reinforce the strip-shaped wire grids, prevent the strip-shaped wire grids from falling down in the preparation process, and improve the optical polarization degree and the light transmittance of the polaroid.

Additional features and advantages of embodiments of the present application will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by the practice of the present application.

Other aspects will be apparent upon reading and understanding the attached drawings and detailed description.

Drawings

The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the example serve to explain the principles of the invention and not to limit the invention.

FIG. 1a is a plan view of a polarizing plate;

FIG. 1b shows the appearance of a polarizer under an electron microscope;

FIG. 2a is a plan view of a polarizing plate of an embodiment of the present application;

FIG. 2b is a cross-sectional view taken along line A-A of FIG. 2 a;

FIG. 2c is a cross-sectional view taken along line B-B of FIG. 2 a;

FIG. 3a is a plan view of an exemplary embodiment of the present application after forming a patterned layer;

FIG. 3b is a cross-sectional view taken along line A-A of FIG. 3 a;

FIG. 4a is a plan view of an exemplary embodiment of the present application after an imprinting layer is patterned;

FIG. 4b is a cross-sectional view taken along line A-A of FIG. 4 a;

FIG. 5a is a plan view of a photoresist layer patterned according to an exemplary embodiment of the present application;

FIG. 5b is a cross-sectional view taken along line A-A of FIG. 5 a;

fig. 6a is a plan view of a sacrificial layer pattern formed in accordance with an exemplary embodiment of the present application;

FIG. 6b is a plan view of another exemplary embodiment of the present application after forming a sacrificial layer pattern;

FIG. 6c is a cross-sectional view taken along line A-A of FIGS. 6a and 6 b;

FIG. 7a is a plan view of a sacrificial layer pattern formed in accordance with an exemplary embodiment of the present application;

FIG. 7b is a cross-sectional view taken along line A-A of FIG. 7 a;

FIG. 8a is a plan view of the patterned layer etched according to the present embodiment of the disclosure;

FIG. 8b is a cross-sectional view taken along line A-A of FIG. 8 a;

FIG. 9 shows the polarizer of the present application under an electron microscope.

Description of the reference numerals

1-a polarizing plate; 10-a substrate; 10 a-a metal wire grid;

11-a polarizing layer; 111-wire grid strips; 112-a support strip;

12-a patterned layer; 13-embossing the strip; 14-photoresist grooves;

15-a sacrificial layer; 16-sacrificial strips.

Detailed Description

To make the objects, technical solutions and advantages of the present disclosure more apparent, embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. Note that the embodiments may be implemented in a plurality of different forms. Those skilled in the art can readily appreciate the fact that the forms and details may be varied into a variety of forms without departing from the spirit and scope of the present disclosure. Therefore, the present disclosure should not be construed as being limited to the contents described in the following embodiments. The embodiments and features of the embodiments in the present disclosure may be arbitrarily combined with each other without conflict.

In the drawings, the size, thickness, or region of each component may be exaggerated for clarity. Therefore, one aspect of the present disclosure is not necessarily limited to the dimensions, and the shapes and sizes of the respective components in the drawings do not reflect a true scale. Further, the drawings schematically show ideal examples, and one embodiment of the present disclosure is not limited to the shapes, numerical values, and the like shown in the drawings.

The ordinal numbers such as "first", "second", "third", and the like in the present specification are provided for avoiding confusion among the constituent elements, and are not limited in number.

FIG. 1a is a plan view of a polarizer, and FIG. 1b is a view of a polarizer under an electron microscope. As shown in fig. 1a, the polarizing plate 1 includes a substrate 10 and a plurality of metal wire grids 10a arranged in parallel and spaced apart on the substrate 10. In order to achieve a high degree of optical polarization of the WGP and thus a greatly improved contrast ratio of the display device, one possible way is to increase the height of the metal wire grid. However, in the WGP production process, as shown in fig. 1b, the metal wire grid 10a is liable to fall due to the increase in height of the metal wire grid 10a, and the fall is not regular. The falling of the metal wire grid 10a causes a decrease in optical characteristics such as optical polarization degree and light transmittance of the polarizing plate. The height of the wire grid may be the length of the wire grid in the vertical direction as shown in fig. 1 b.

An embodiment of the present application provides a polarizing plate, including: the substrate with set up the polarization layer on the substrate, the polarization layer includes along a plurality of strip wire grids that first direction extension and edge second direction interval set up and sets up the support bar between adjacent strip wire grid, the support bar is connected with adjacent strip wire grid, first direction and second direction are alternately.

This application embodiment is through connecting the support bar between adjacent strip line grating, and the support bar can support strip line grating to consolidate strip line grating, prevent that strip line grating from appearing lodging in the preparation process, promote polaroid optical polarization degree and luminousness.

The technical scheme of the embodiment of the application is exemplarily described below with reference to the accompanying drawings.

Fig. 2a is a plan view of a polarizing plate according to an embodiment of the present application, fig. 2B is a sectional view taken at a position a-a shown in fig. 2a, and fig. 2c is a sectional view taken at a position B-B shown in fig. 2 a. As shown in fig. 2a, the polarizing plate 1 includes: the polarization layer 11 includes a plurality of striped wire grids 111 extending along a first direction and arranged at intervals along a second direction, and support bars 112 arranged between adjacent striped wire grids 111, the support bars 112 are connected to the adjacent striped wire grids 111, the first direction is an X direction shown in fig. 2a, the second direction is a Y direction shown in fig. 2a, the first direction crosses the second direction, and an included angle between the first direction and the second direction may be 30 ° to 150 °, for example, 45 °, 60 °, 90 °, or 135 °. The wire grids 111 can reflect the TE polarized light and transmit the TM polarized light to form polarized light in a single direction, and the supporting bars 112 can support the adjacent wire grids 111 to prevent the wire grids 111 from falling, in other words, the supporting bars at both sides of the wire grids support the wire grids to reinforce the wire grids, so that the wire grids are kept substantially perpendicular to the substrate to prevent the wire grids from falling to either side. In an example, the angle between the first direction and the second direction may be 90 °, in other words, the first direction and the second direction are perpendicular.

As shown in fig. 2a and 2b, the plurality of striped wire grids 111 are arranged in parallel and at equal intervals along the second direction. The distance D1 between adjacent striped wire grids 111 is 40 nm to 80 nm, and the distance between striped wire grids 111 can also be referred to as the period of striped wire grids 111. The number and period of the striped wire grids are set according to the actual display product. The cross section of the wire grid strip 111 is substantially rectangular, and in some embodiments, the cross section of the wire grid strip 111 can also be a trapezoid with a wide top and a narrow bottom. The aspect ratio of the wire grid 111 is 1.25 to 7.5, which is the ratio of the height to the width of the wire grid, i.e. the ratio of H1/L1 in fig. 2b, and the high aspect ratio can improve the polarization degree of the light of the polarizer, thereby improving the resolution of the display device. In one example, the height H1 of the wire grid strip 111 in the direction perpendicular to the substrate is 100 nm to 300 nm, which may also be referred to as the thickness of the wire grid strip. In the second direction, the width L1 of the striped wire grid 111 is 40 nm to 80 nm, so the striped wire grid may be referred to as a nanogrid. The material of the strip-shaped wire grid comprises at least one of aluminum, chromium, gold, silver and nickel. When TE polarized light with the polarization direction parallel to the first direction is incident to the surface of the strip-shaped wire grating, electrons are caused to freely oscillate along the direction of the first direction, and the TE polarized light is reflected by the strip-shaped wire grating; for TM polarized light with a polarization direction perpendicular to the first direction, since the linewidth of the striped wire grid is much smaller than the wavelength of the incident light, the electronic oscillation in the first direction is limited, and the TM polarized light will be directly transmitted.

As shown in fig. 2b-2c, between each adjacent striped wire grid 111, the supporting bars 112 extend along the second direction and are arranged at intervals along the first direction, and the number of the supporting bars is set according to actual requirements, and the fewer the supporting bars are, the better the supporting bars are, under the condition that the striped wire grid 111 is ensured not to fall down. The spacing between adjacent support bars 112 may be 100 to 500 microns. The height of the support bars 112 is less than or equal to the height of the striped wire grid 111 in the direction perpendicular to the substrate. The height H2 of support bars 112 is 100 nm to 300 nm. The width L2 of the supporting bars 112 in the first direction is 1 micron to 6 microns. The width of the supporting bars 112 in the second direction is equal to the period of the striped wire grid 111. The thinner the width of the supporting bar 112, the better, so that it is invisible to the naked eye at a certain observation distance, without affecting the appearance quality of the display product. According to the simulation result: the support bars 112 were observed at a distance of 50 cm, a width L2 of 6 microns and below, and a spacing D2 of adjacent support bars 112 above 145 microns, which was not observable by the naked eye. The material of the supporting strip comprises at least one of aluminum, chromium, gold, silver and nickel, and the material of the supporting strip and the material of the strip-shaped wire grid can be the same or can be different. In one example, the support bars form a plurality of rows and columns extending along the first direction and the second direction, and the support bars and the strip-shaped wire grids form a grid-shaped structure.

In this embodiment, the striped wire grids and the supporting bars may be disposed in the same layer. The material of the strip-shaped wire grid and the material of the supporting bars are both aluminum,

the embodiment of the application provides a polaroid, through set up the support bar between adjacent strip wire grid, the support bar supports strip wire grid at strip wire grid preparation in-process, consolidate strip wire grid, prevent strip wire grid lodging in preparation process, especially when the polaroid of preparation high aspect ratio, and because the support bar has great width along the first direction, great interval has again between the adjacent support bar, can not exert an influence to optical polarization degree, and then promote polaroid optical polarization degree and transmissivity.

In an exemplary embodiment, the support bars are at least located adjacent to the end faces of the wire grids and are spaced from the end faces of the wire grids by a distance of 100 micrometers to 1000 micrometers.

In an exemplary embodiment, the polarizer further includes a protective layer disposed on a side of the polarizing layer away from the substrate, and an orthographic projection of the protective layer on the substrate coincides with an orthographic projection of the polarizing layer on the substrate. The material of the protective layer comprises silicon oxide SiO_xAnd silicon nitride Si_xN_yOne or more of them. The thickness of the protective layer is 50 nm to 200 nm in a direction perpendicular to the substrate. The strip-shaped wire grids and the supporting bars are made of metal materials, and the protective layer enables the strip-shaped wire grids and the supporting bars not to be easily rusted in the using process, so that the service life of the polaroid is prolonged.

The technical scheme of the polarizer is exemplified by the process of preparing the polarizer. In this example, the "patterning process" includes processes of depositing a film, coating a photoresist, mask exposing, developing, etching, and stripping a photoresist. The deposition may employ any one or more selected from sputtering, evaporation and chemical vapor deposition, the coating may employ any one or more selected from spray coating and spin coating, and the etching may employ any one or more selected from dry etching and wet etching. "thin film" refers to a layer of a material deposited or coated onto a substrate. The "thin film" may also be referred to as a "layer" if it does not require a patterning process throughout the fabrication process. When the "thin film" requires a patterning process throughout the fabrication process, it is referred to as a "thin film" before the patterning process and a "layer" after the patterning process. The "layer" after the patterning process includes at least one "pattern". The "a and B are disposed in the same layer" in the present disclosure means that a and B are simultaneously formed by the same patterning process.

(1) A patterned layer is formed on a substrate. Forming a patterned layer on a substrate includes: a metal film is deposited on the substrate 10, as shown in fig. 3a and 3b, which forms the patterned layer 12. The metal thin film material comprises: at least one of aluminum, chromium, gold, silver and nickel, and the thickness of the metal thin film is 100 nm to 300 nm. Fig. 3a is a plan view of the patterned layer after the patterned layer is formed according to the exemplary embodiment of the present application, and fig. 3b is a cross-sectional view of the position a-a in fig. 3 a.

(2) An imprinting layer pattern is formed on the patterned layer. Forming the imprinting layer pattern on the patterning layer may include: an imprint pattern is formed on the imprint layer by applying an imprint resist on the patterned layer 12 through a coating process to form the imprint layer, and then imprinting the imprint layer using an imprint template, as shown in fig. 4a and 4b, where fig. 4a is a plan view of the imprint pattern formed according to the exemplary embodiment of the present application, and fig. 4b is a cross-sectional view of a-a position in fig. 4 a. In an exemplary embodiment, the imprint pattern includes a plurality of imprint stripes 13 extending in a first direction (X direction shown in fig. 4 a) and arranged at intervals in a second direction (Y direction shown in fig. 4 a), the first direction being perpendicular to the second direction, the plurality of imprint stripes 13 being arranged in parallel at equal intervals, the imprint stripes having a substantially rectangular cross-section, the width L3 of the imprint stripes 13 being 40 nm to 80 nm, and the interval D3 of adjacent imprint stripes 13 being 40 nm to 80 nm. The patterned layer 12 between adjacent embossed strips 13 is exposed. In this example, the imprint paste may include one or more of a polymethylmethacrylate imprint paste and a siloxane copolymer imprint paste.

(3) And forming a photoresist layer pattern on the substrate on which the pattern is formed. Forming a photoresist pattern on the substrate on which the aforementioned pattern is formed includes: coating photoresist on the substrate on which the patterns are formed through a coating process to form a photoresist layer, exposing the photoresist layer by using a mask plate, and developing to form photoresist patterns as shown in fig. 5a and 5b, wherein fig. 5a is a plan view of the photoresist layer after the patterns are formed according to the exemplary embodiment of the present application, and fig. 5b is a cross-sectional view of a position a-a in fig. 5 a. The photoresist pattern comprises a plurality of photoresist grooves 14 extending in the second direction and spaced apart in the first direction, the photoresist grooves 14 exposing the imprinting strips 13 and the patterning layer 12, i.e. as shown in fig. 5b, after this process, the structure of the thin layer at the corresponding positions of the photoresist grooves 14 is not changed. The number of the photoresist grooves 14 is related to the size of the polarizer to be manufactured. The width L4 of the photoresist groove 14 is 1 micron to 6 microns and the pitch D4 of adjacent photoresist grooves 14 is 100 microns to 1000 microns.

(4) A sacrificial layer pattern is formed on the substrate on which the pattern is formed. Forming a sacrificial layer pattern on the substrate on which the pattern is formed includes: a sacrificial layer film is deposited on the substrate on which the aforementioned pattern is formed, and the sacrificial layer film is patterned through a patterning process, as shown in fig. 6a and 6c, to form a sacrificial layer 15 pattern, fig. 6a is a plan view after the sacrificial layer pattern is formed according to an exemplary embodiment of the present application, and fig. 6c is a cross-sectional view taken along a-a position in fig. 6 a. The sacrificial layer 15 covers the exposed imprinting strips 13 and patterning layer 12 and the sidewalls of the photoresist recesses 14, and the sacrificial layer film on the photoresist layer is etched away. In an exemplary embodiment, the sacrificial layer is the same material as the patterned layer, including: at least one of aluminum, chromium, gold, silver, and nickel. In one example, the thickness of the sacrificial layer is less than the thickness of the patterned layer, and in another example, the thickness of the sacrificial layer is equal to the thickness of the patterned layer. The thickness of the sacrificial layer is 100 nm to 300 nm. In another exemplary embodiment, the sacrificial layer film is not patterned, as shown in fig. 6b, after the sacrificial layer film is deposited on the substrate on which the pattern is formed, the sacrificial layer film forms the sacrificial layer 15, and the sacrificial layer at the position corresponding to the photoresist groove is shown in fig. 6c, which is not described again, and fig. 6b is a plan view after another sacrificial layer pattern is formed in the exemplary embodiment of the present application.

(5) And stripping the photoresist layer. Stripping the photoresist layer includes: the photoresist layer is removed, as shown in fig. 7a and 7b, exposing the imprint strips 13 and the patterning layer 12 covered by the photoresist layer, the positions where the sacrificial layer 15 covers the sidewalls of the photoresist grooves are removed, the sacrificial layer 15 forms a plurality of sacrificial strips 16 extending along the second direction and spaced along the first direction, fig. 7a is a plan view after forming a sacrificial layer pattern according to an exemplary embodiment of the present application, and fig. 7b is a cross-sectional view taken along a-a position in fig. 7 a. In an exemplary embodiment, the width L5 of the sacrificial strips 16 along the first direction is 1 to 6 microns and the spacing D5 between adjacent sacrificial strips 16 is 100 to 1000 microns.

(6) Forming a polarizing layer pattern. Forming the polarizing layer pattern includes: etching away the exposed patterning layer and the sacrificial strip by an etching process, the exposed patterning layer comprising: the portions of the embossed stripes 13 and the sacrificial stripes 16 that are not covered, i.e. the portions between the embossed stripes 13 but not covered by the sacrificial stripes 16, as shown in fig. 8a and 8b, the patterned layer 12 at the positions corresponding to the embossed stripes 13 forms a stripe-shaped wire grid, the patterned layer 12 at the positions corresponding to the sacrificial stripes 16 forms support bars, fig. 8a is a plan view after etching the patterned layer according to the embodiment of the present application, and fig. 8b is a cross-sectional view of the position a-a in fig. 8 a. The stamp strip is peeled off, as shown in fig. 2a, forming a polarizing layer pattern. The polarization layer pattern includes a plurality of striped wire grids 111 extending along the first direction and arranged at intervals along the second direction and a plurality of support bars 112 arranged between adjacent striped wire grids 111, all the support bars 112 form a plurality of rows and a plurality of columns extending along the first direction and the second direction and form a grid structure with the striped wire grids 111. In an example, the thickness of the sacrificial strips is smaller than the thickness of the patterned layer in a plane perpendicular to the substrate, and during the etching process, the portions of the patterned layer corresponding to the positions of the sacrificial strips are etched, resulting in the height of the supporting bars being smaller than the height of the striped wire grid, resulting in the structure shown in fig. 2 b. In another example, the thickness of the sacrificial strips is equal to or greater than the thickness of the patterned layer in a plane perpendicular to the substrate, the patterned layer corresponding to the sacrificial strip locations is not etched during the etching, the height of the support bars is equal to the height of the wire grid stripes, or the height of the support bars is greater than the height of the wire grid stripes. In this example, a general etching process may include wet etching and dry etching, where the wet etching is a technique of immersing an etched material in an etching solution for etching, and the technique has strong adaptability and wide application. Since wet etching is isotropic, when etching a metal layer, a certain deviation exists between the pattern of the upper printed layer and the etched pattern of the lower patterned layer, which may result in failure to complete pattern transfer and duplication with high quality. Dry etching is generally a technique for performing thin film etching using plasma, which can achieve a high aspect ratio. The manufacturing process in this example is to form a nano-scale pattern, and since the deviation of wet etching is large, the etching process may be dry etching in the manufacturing process provided in this example. In practical application, the dry etching may be the same as the process in the prior art, and is not described herein.

FIG. 9 shows the polarizer of the present application under an electron microscope. Through the preparation process, the polaroid shown in fig. 9 is formed, and the phenomenon that the strip-shaped wire grating is laid down can be seen through the appearance of the polaroid under an electron microscope, so that the problem that the strip-shaped wire grating is laid down is effectively solved through the preparation process of the embodiment of the application.

Through the above-described manufacturing process, the polarizing plate 1 was manufactured including:

a substrate 10;

the polarization layer 11 is disposed on the substrate 10, the polarization layer 11 includes a plurality of striped wire grids 111 extending along a first direction and disposed at intervals along a second direction and support bars 112 disposed between adjacent striped wire grids 111, the support bars 112 are connected to the adjacent striped wire grids 111, and the first direction and the second direction are crossed.

In this example, the substrate comprises a glass, quartz, or polyimide substrate.

Can see through the preparation process of polaroid in this example, through the preparation in-process at the polaroid, form the sacrificial strip, the patterning layer that the sacrificial strip covered is not etched or the part is etched at the etching process, and support bar and strip wire grid form simultaneously, and adjacent strip wire grid is connected to the support bar, and on the support bar can support strip wire grid, consolidate strip wire grid, prevent strip wire grid lodging, guarantee that strip wire grid aspect ratio is unanimous, promote the light polarization degree of polaroid.

The embodiment of the application also provides a preparation method of the polaroid, which is characterized by comprising the following steps:

form the polarization layer on the substrate, the polarization layer includes along the extension of first direction and along a plurality of strip wire grids of second direction interval setting and set up the support bar between adjacent strip wire grids, and the support bar is connected with adjacent strip wire grid, and first direction and second direction are alternately crossed.

In an exemplary embodiment, forming a polarizing layer on a substrate includes:

forming a patterned layer on a substrate;

forming a plurality of stamping strips on the patterning layer, wherein the plurality of stamping strips extend along a first direction and are arranged at intervals along a second direction;

forming a plurality of sacrificial strips on the plurality of stamping strips and the patterning layer, wherein the plurality of sacrificial strips extend along the second direction and are arranged at intervals along the first direction;

etching the sacrificial strips and the patterning layer which is not covered by the imprinting strips and the sacrificial strips through an etching process;

stripping the stamping bar to form a polarization layer, forming a strip-shaped wire grid with the patterning layer at the position corresponding to the stamping bar, and forming a support bar with the patterning layer at the position corresponding to the sacrificial bar.

In an exemplary embodiment, forming a plurality of stamp strips on the patterned layer includes:

forming an imprinting layer on the patterned layer;

and forming an embossing pattern on the embossing layer by adopting an embossing mode, wherein the embossing pattern comprises a plurality of embossing strips which extend along the first direction and are arranged at intervals along the second direction.

In an exemplary embodiment, forming a plurality of sacrificial strips over the plurality of imprinting strips and the patterned layer includes:

forming a photoresist layer covering the plurality of imprinting strips, exposing the photoresist layer by using a mask plate, and forming a photoresist pattern after developing, wherein the photoresist pattern comprises a plurality of photoresist grooves which extend along the second direction and are arranged at intervals along the first direction, and the imprinting strips and the patterning layer are exposed out of the photoresist grooves;

forming a sacrificial film covering the photoresist layer and the photoresist groove;

and stripping the photoresist layer to enable the sacrificial film in the photoresist groove to form sacrificial strips, wherein the sacrificial strips extend along the second direction and are arranged at intervals along the first direction.

In an exemplary embodiment, the width of the sacrificial strips is 100 to 300 microns and the spacing between adjacent sacrificial strips is 100 to 1000 microns in the first direction.

The embodiment of the application provides a preparation method of a polaroid, and the support structure connected with a strip-shaped wire grating is formed, so that the support structure supports the strip-shaped wire grating in the preparation process, the strip-shaped wire grating is prevented from falling, and especially when the polaroid with a high aspect ratio is prepared, the optical polarization degree and the transmittance of the polaroid are improved.

In the description of the present disclosure, it should be noted that the terms "upper", "lower", "one side", "the other side", "one end", "the other end", "side", "opposite", "four corners", "periphery", "mouth" word structure ", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of describing the present disclosure and simplifying the description, but do not indicate or imply that the structures referred to have a specific orientation, are configured and operated in a specific orientation, and thus, cannot be construed as limiting the present disclosure.

In the description of the embodiments of the present application, unless otherwise explicitly stated or limited, the terms "connected," "directly connected," "indirectly connected," "fixedly connected," "mounted," and "assembled" are to be construed broadly and, for example, may be fixedly connected, detachably connected, or integrally connected; the terms "mounted," "connected," and "fixedly connected" may be directly connected or indirectly connected through intervening media, or may be connected through two elements. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.

Although the embodiments disclosed in the embodiments of the present application are described above, the descriptions are only provided for the embodiments that are easy to understand. It will be understood by those skilled in the art of the present disclosure that various changes in form and details may be made therein without departing from the spirit and scope of the disclosure, and that the scope of the disclosure is to be limited only by the terms of the appended claims.