Monitoring mechanism of ICP high-density plasma etching machine
阅读说明：本技术 一种icp高密度等离子刻蚀机的监控机构 (Monitoring mechanism of ICP high-density plasma etching machine ) 是由 吕晓东 王作义 于 2020-06-18 设计创作，主要内容包括：本发明公开了一种ICP高密度等离子刻蚀机的监控机构,包括刻蚀机本体,所述刻蚀机本体的左侧设置有前后移动机构,所述刻蚀机本体的上方设置有左右移动导向机构,所述左右移动导向机构的内腔设置有左右移动机构一和左右移动机构二,所述刻蚀机本体的顶部固定连接有刻蚀基板。本发明通过前后移动机构的设置,使得监控设备能够跟随左右移动导向机构移动,从而使得监控设备与左右移动机构二之间的连接线不需要太长,从而就不易因连接线缠绕而出现事故,也能够减少对刻蚀机的损坏,延长刻蚀机的使用寿命,还能够控制左右移动机构一对刻蚀机上淤积的药水进行风力吹干,从而使得刻蚀基板的表面能够快速干燥,也方便后续的使用。(The invention discloses a monitoring mechanism of an ICP high-density plasma etcher, which comprises an etcher body, wherein a front-back moving mechanism is arranged on the left side of the etcher body, a left-right moving guide mechanism is arranged above the etcher body, a left-right moving mechanism I and a left-right moving mechanism II are arranged in an inner cavity of the left-right moving guide mechanism, and an etching substrate is fixedly connected to the top of the etcher body. According to the invention, through the arrangement of the front-back moving mechanism, the monitoring equipment can move along with the left-right moving guide mechanism, so that a connecting line between the monitoring equipment and the left-right moving mechanism II does not need to be too long, accidents caused by winding of the connecting line are not easy to occur, the damage to the etching machine can be reduced, the service life of the etching machine is prolonged, the left-right moving mechanism can be controlled to carry out wind drying on liquid medicine deposited on the etching machine, and therefore, the surface of an etched substrate can be dried quickly, and the subsequent use is facilitated.)
1. The utility model provides a monitoring mechanism of ICP high density plasma etching machine, includes etching machine body (1), its characterized in that: the etching machine is characterized in that a front-and-back moving mechanism (2) is arranged on the left side of the etching machine body (1), a left-and-right moving guide mechanism (3) is arranged above the etching machine body (1), a left-and-right moving mechanism (4) and a left-and-right moving mechanism (5) are arranged in an inner cavity of the left-and-right moving guide mechanism (3), an etching substrate (6) is fixedly connected to the top of the etching machine body (1), a wind drying device II (8) and a wind drying device I (7) are fixedly arranged on two sides of the bottom of the left-and-right moving mechanism (4) respectively, and a monitoring device (9) is.
2. The monitoring mechanism of an ICP high density plasma etcher as claimed in claim 1, wherein: the back-and-forth movement mechanism (2) comprises a fixing frame (21) which is fixedly connected with the left side of the etching machine body (1) through bolts, a supporting plate (22) is welded on the rear side of the fixing frame (21), a motor I (23) is welded on the top of the supporting plate (22), a threaded rod (24) which is arranged in the inner cavity of the fixing frame (21) is fixedly connected with an output shaft of the motor I (23), a sliding block (25) is connected with the surface of the threaded rod (24) in a threaded mode, a connecting piece (28) is fixedly arranged on the right side of the sliding block (25), a moving column (26) is fixedly arranged on the right side of the connecting piece (28), monitoring equipment (9) is fixed on the moving column (26), a roller (27) is movably arranged at the bottom of the moving column (26), and the bottom.
3. The monitoring mechanism of an ICP high density plasma etcher as claimed in claim 2, wherein: the connecting piece (28) comprises a first fixing block (281) welded on the sliding block (25) and a second fixing block (282) welded on the moving column (26), and the first fixing block (281) and the second fixing block (282) are fixedly connected through screws.
4. The monitoring mechanism of an ICP high density plasma etcher as claimed in claim 2, wherein: the left and right moving guide mechanism (3) comprises a guide rail (31) fixedly mounted at the top of the moving column (26), a rectangular hole (34) and a rectangular hole (32) are respectively formed in the front side and the rear side of the guide rail (31), and a toothed plate (33) is welded at the top of the inner cavity of the guide rail (31).
5. The monitoring mechanism of an ICP high density plasma etcher, as set forth in claim 4, wherein: moving mechanism (4) about including setting up the adjustable shelf (41) in guided way (31) inner chamber, the front side fixed mounting of adjustable shelf (41) has at gliding slider (42) of rectangular hole (34) inner chamber, the front side fixed mounting of adjustable shelf (41) has motor three (45) that are located slider (42) inner chamber, the output shaft of motor three (45) runs through to the inner chamber of adjustable shelf (41) and fixedly connected with and pinion rack (33) meshed gear (46), the bottom fixed mounting of adjustable shelf (41) has motor two (43), the output shaft fixedly connected with carousel (44) of motor two (43), wind-force drying equipment two (8) and wind-force drying equipment (7) are fixed mounting respectively in the both sides of carousel (44) bottom.
6. The monitoring mechanism of an ICP high density plasma etcher, as set forth in claim 4, wherein: moving mechanism two (5) including setting up the adjustable shelf two (51) at guided way (31) inner chamber, the rear side welded pin (52) at slotted hole (32) inner chamber slip of adjustable shelf two (51), the front side fixed mounting of adjustable shelf two (51) has motor four (53), the output shaft of motor four (53) runs through to the inner chamber and the fixedly connected with of adjustable shelf two (51) and pinion rack (33) meshing gear two (54), the bottom fixed mounting of adjustable shelf two (51) has spraying apparatus (55), the four corners of spraying apparatus (55) bottom all communicates spray head (56).
7. An ICP high density plasma etcher monitoring mechanism as set forth in claim 5 or 6, wherein: the first gear (46) and the second gear (54) are meshed with the front side and the rear side of the bottom of the toothed plate (33) respectively.
Technical Field
The invention relates to the technical field of etching machines, in particular to a monitoring mechanism of an ICP high-density plasma etching machine.
Background
Etchers are mainly used in the aerospace, mechanical, and signage industries, and etcher technology is widely used in the processing of weight-saving instrument panels, signs, and thin workpieces that are difficult to process by conventional processing methods, and etching is an indispensable technology in semiconductor and circuit board manufacturing processes, and can be applied to various metals such as: the surface of metal and metal products such as iron, copper, aluminum, titanium, stainless steel, zinc plate, etc. is etched with patterns, patterns and geometric shapes, and can be precisely hollowed out, and can also be etched and cut aiming at domestic and imported stainless steel of various types, and the method is widely applied to industrial purposes such as gold card label processing, mobile phone key processing, stainless steel filter screen processing, stainless steel elevator decorative plate processing, metal lead frame processing, metal glasses leg wire processing, circuit board processing, decorative metal plate processing, etc.
Install monitoring device on the etching machine, but monitoring device on the traditional etching machine is fixed in a position, can't remove, and medicament spray set on the etching machine then can remove, in order to make the removal that spray set can be smooth, connecting wire between its controlling means and the spray set just needs very long, and the connecting wire overlength then twines together easily, the accident appears easily, not only can cause the damage to the etching machine, still threaten user's life safety, and except that monitoring device can't remove, spray set spun liquid medicine is behind the sculpture, probably can appear remaining and silting, be difficult for drying, thereby cause the influence to next etching effect, reduce etching efficiency.
Disclosure of Invention
The invention aims to provide a monitoring mechanism of an ICP high-density plasma etcher, which has the advantages of shortening the length of a connecting rod, reducing the frequency of accidents and quickly drying deposited liquid medicine, solves the problems that a monitoring device on the traditional etcher is fixed at one position and cannot move, the medicament spraying device on the etching machine can be moved, in order to ensure that the spraying device can be moved smoothly, the connecting line between the control device and the spraying device needs to be very long, and the connecting line is easy to be wound together if the connecting line is too long, so that accidents are easy to occur, not only can the etching machine be damaged, but also the life safety of a user is threatened, besides, the monitoring device cannot move, and liquid medicine sprayed by the spraying device is likely to remain and deposit after etching and is not easy to dry, so that the next etching effect is influenced, and the etching efficiency is reduced.
In order to achieve the purpose, the invention provides the following technical scheme: the utility model provides a monitoring mechanism of ICP high density plasma etching machine, includes the etching machine body, the left side of etching machine body is provided with back-and-forth movement mechanism, the top of etching machine body is provided with and removes guiding mechanism, remove guiding mechanism's inner chamber about and be provided with and remove the moving mechanism two, the top fixedly connected with sculpture base plate of etching machine body, the both sides of removing moving mechanism one bottom set firmly wind-force drying equipment two respectively and wind-force drying equipment one, the left side of back-and-forth movement mechanism has set firmly supervisory equipment.
The monitoring mechanism for the ICP high-density plasma etcher, provided by the invention, further comprises the following steps: the back-and-forth movement mechanism includes through bolt fixedly connected with at the left mount of etching machine body, the rear side welding of mount has the layer board, the top welding of layer board has motor one, the output shaft fixedly connected with of motor one is located the threaded rod of mount inner chamber, the surperficial threaded connection of threaded rod has the sliding block, the right side fixed mounting of sliding block has the connecting piece, the right side fixed mounting of connecting piece has the removal post, supervisory equipment fixes on the removal post, the bottom movable mounting of removal post has the gyro wheel, the bottom of gyro wheel and the inner wall contact of mount.
The monitoring mechanism for the ICP high-density plasma etcher, provided by the invention, further comprises the following steps: the connecting piece is including welding fixed block one on the sliding block and welding fixed block two on the removal post, fixed block one and fixed block two pass through screw fixed connection.
The monitoring mechanism for the ICP high-density plasma etcher, provided by the invention, further comprises the following steps: the left and right moving guide mechanism comprises a guide rail fixedly mounted at the top of the moving column, the front side and the rear side of the guide rail are respectively provided with a rectangular hole and a long circular hole, and a toothed plate is welded at the top of the inner cavity of the guide rail.
The monitoring mechanism for the ICP high-density plasma etcher, provided by the invention, further comprises the following steps: the left and right moving mechanism I is including setting up the adjustable shelf I at the guided way inner chamber, the front side fixed mounting of adjustable shelf I has at the gliding slider of rectangular downthehole chamber, the front side fixed mounting of adjustable shelf I has the motor three that is located the slider inner chamber, the output shaft of motor three runs through to the inner chamber of adjustable shelf I and fixedly connected with and pinion rack meshing's gear one, the bottom fixed mounting of adjustable shelf I has motor two, the output shaft fixedly connected with carousel of motor two, wind-force drying equipment two and wind-force drying equipment one branch are fixed mounting in the both sides of carousel bottom respectively.
The monitoring mechanism for the ICP high-density plasma etcher, provided by the invention, further comprises the following steps: the left and right moving mechanism II comprises a second moving frame arranged in an inner cavity of the guide rail, a sliding pin sliding in an inner cavity of the long round hole is welded on the rear side of the second moving frame, a fourth motor is fixedly arranged on the front side of the second moving frame, an output shaft of the fourth motor runs through to an inner cavity of the second moving frame and is fixedly connected with a second gear meshed with the toothed plate, spraying equipment is fixedly arranged at the bottom of the second moving frame, and the four corners of the bottom of the spraying equipment are all communicated with spraying heads.
The monitoring mechanism for the ICP high-density plasma etcher, provided by the invention, further comprises the following steps: the first gear and the second gear are respectively meshed with the front side and the rear side of the bottom of the toothed plate.
Compared with the prior art, the invention has the following beneficial effects:
1. the invention can drive the left-right moving guide mechanism, the left-right moving mechanism II on the left-right moving guide mechanism and the left-right moving mechanism I to move back and forth through the arrangement of the front-back moving mechanism, and the monitoring equipment can also move along with the left-right moving guide mechanism, so that a connecting line between the monitoring equipment and the left-right moving mechanism II does not need to be too long, accidents caused by winding of the connecting line are not easy to occur, the damage to the etching machine can be reduced, the service life of the etching machine is prolonged, and after the left-right moving mechanism II sprays liquid medicine, the left-right moving mechanism can be controlled to carry out wind drying on the liquid medicine deposited on the etching machine, so that the surface of an etching substrate can be quickly dried, the time required by cleaning is reduced, the subsequent use is convenient, and the monitoring mechanism of, reduce accident frequency and the advantage of fast drying siltation liquid medicine, the monitoring device who has solved on the traditional etching machine is fixed in a position, can't remove, and the medicament spray set on the etching machine then can remove, in order to make the removal that spray set can be smooth, connecting wire between its controlling means and the spray set just needs very long, and the connecting wire overlength then twines together easily, the accident appears easily, not only can cause the damage to the etching machine, still threaten user's life safety, and except that monitoring device can't remove, spray set spun liquid medicine is behind the sculpture, probably can appear remaining and siltation, be difficult for drying, thereby cause the influence to next etching effect, reduce the problem of sculpture efficiency.
2. According to the invention, through the arrangement of the roller, when the sliding block drives the moving column to slide in the inner cavity of the fixing frame, the friction between the outer wall of the moving column and the inner wall of the fixing frame can be reduced, so that the resistance is reduced, and the moving column can slide more smoothly.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a perspective view of the fore-aft movement mechanism of the present invention;
FIG. 3 is a perspective view of the connector of the present invention;
FIG. 4 is a front perspective view of the left-right movement guide mechanism of the present invention;
FIG. 5 is a rear perspective view of the left-right movement guide mechanism of the present invention;
FIG. 6 is a bottom perspective view of the left and right shift guide mechanism of the present invention;
FIG. 7 is a perspective view of a left-right moving mechanism of the present invention;
FIG. 8 is a perspective view of a left-right moving mechanism of the present invention;
fig. 9 is a perspective anatomical exploded view of the left-right movement guide mechanism of the present invention.
In the figure: 1. an etching machine body; 2. a forward-backward movement mechanism; 3. a guide mechanism moves left and right; 4. a left-right moving mechanism I; 5. a left-right moving mechanism II; 6. etching the substrate; 7. a first wind power drying device; 8. a second wind power drying device; 9. monitoring equipment; 21. a fixed mount; 22. a support plate; 23. a first motor; 24. a threaded rod; 25. a slider; 26. moving the column; 27. a roller; 28. a connecting member; 31. a guide rail; 32. a long round hole; 33. a toothed plate; 34. a rectangular hole; 41. a first movable frame; 42. a slider; 43. a second motor; 44. a turntable; 45. a third motor; 46. a first gear; 51. a second movable frame; 52. a slide pin; 53. a fourth motor; 54. a second gear; 55. a spraying device; 56. a sprinkler head; 281. a first fixed block; 282. and a second fixing block.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-9, the present invention provides a technical solution, a monitoring mechanism of an ICP high density plasma etcher, including an etcher body 1, a front-back moving mechanism 2 is provided on the left side of the etcher body 1, a left-right moving guide mechanism 3 is provided above the etcher body 1, a left-right moving mechanism 4 and a left-
As an embodiment in the present invention: the back-and-forth moving mechanism 2 comprises a fixed frame 21 fixedly connected to the left side of the etching machine body 1 through bolts, a supporting plate 22 is welded to the rear side of the fixed frame 21, a motor I23 is welded to the top of the supporting plate 22, an output shaft of the motor I23 is fixedly connected with a threaded rod 24 positioned in an inner cavity of the fixed frame 21, a sliding block 25 is connected to the surface of the threaded rod 24 through threads, a connecting piece 28 is fixedly installed on the right side of the sliding block 25, a moving column 26 is fixedly installed on the right side of the connecting piece 28, a monitoring device 9 is fixed on the moving column 26, a roller 27 is movably installed at the bottom of the moving column 26, the bottom of the roller 27 is in contact with the inner wall of the fixed frame 21, the connecting piece 28 comprises a fixed block I281 welded on the sliding block 25 and a fixed block II 282 welded on the moving column 26, thereby drive sliding block 25 and slide in the inner chamber of mount 21, then drive through connecting piece 28 and remove post 26 and slide in the inner chamber of mount 21, when removing post 26 when gliding, gyro wheel 27 on removing post 26 then can hug closely the inner wall roll of mount 21, make the gliding more smooth of removing post 26, through the setting of gyro wheel 27, when sliding block 25 drives and removes post 26 and slide in the inner chamber of mount 21, can reduce the friction of removing the outer wall of post 26 and mount 21 inner wall, thereby reduce the resistance, make and remove post 26 can gliding more smooth.
As a further embodiment of the invention: the left-right moving guide mechanism 3 comprises a
As a further embodiment of the invention: the left-right moving mechanism 4 comprises a first moving frame 41 arranged in an inner cavity of the guide rail 31, a sliding part 42 sliding in an inner cavity of the rectangular hole 34 is fixedly installed on the front side of the first moving frame 41, a third motor 45 positioned in the inner cavity of the sliding part 42 is fixedly installed on the front side of the first moving frame 41, an output shaft of the third motor 45 penetrates through the inner cavity of the first moving frame 41 and is fixedly connected with a first gear 46 meshed with the toothed plate 33, a second motor 43 is fixedly installed at the bottom of the first moving frame 41, an output shaft of the second motor 43 is fixedly connected with a rotating disc 44, a second wind power drying device 8 and a first wind power drying device 7 are respectively and fixedly installed on two sides of the bottom of the rotating disc 44, when the left-right moving mechanism 4 is actually used, the third motor 45 is controlled to start through the monitoring device 9 and drive the first gear 46 to rotate, then the first gear 46 is meshed, and then drive the second motor 43 to move, and can start the second motor 43 to drive the rotating disc 44 to rotate at the same time, realize the regulation of the blowing angle of the second wind power drying equipment 8 and the first wind power drying equipment 7, can also realize the regulation of the blowing position, and is convenient for users to use.
As a further embodiment of the invention: the left-right moving mechanism II 5 comprises a second moving frame 51 arranged in the inner cavity of the
According to the above, since the monitoring device 9 can move along with the left-right moving guide mechanism 3, the longest wiring length of the connecting line is the same as the length of the
The working principle is as follows: when the etching machine is used, a user starts the motor I23 on the front-back moving mechanism 2 by operating the monitoring equipment 9, so that the left-right moving guide mechanism 3, the left-right moving mechanism I4 and the left-right moving mechanism II 5 can move back and forth under the action of the whole front-back moving mechanism 2, the monitoring equipment 9 can move along with the movement, the length of a connecting line between the monitoring equipment 9 and the left-right moving mechanism I4 and the left-right moving mechanism II 5 can be further shortened, accidents caused by winding of the connecting line are avoided, the etching machine is prevented from being damaged, the service life of the etching machine is prolonged, meanwhile, the left-right moving mechanism I4 can carry out wind drying on liquid medicine deposited on the etching substrate 6 after etching, the surface drying speed of the etching substrate 6 is accelerated, and the next etching.
In summary, the following steps: the monitoring mechanism of the ICP high-density plasma etching machine can drive the left-right moving guide mechanism 3, the left-right moving mechanism II 5 on the left-right moving guide mechanism 3 and the left-right moving mechanism I4 to move back and forth through the arrangement of the front-back moving mechanism 2, and the monitoring equipment 9 can also move along with the left-right moving guide mechanism 3, so that a connecting line between the monitoring equipment 9 and the left-right moving mechanism II 5 does not need to be too long, accidents caused by winding of the connecting line are not easy to occur, the damage to the etching machine can be reduced, the service life of the etching machine is prolonged, and after the left-right moving mechanism II 5 sprays liquid medicine, the left-right moving mechanism I4 can be controlled to carry out wind drying on the liquid medicine deposited on the etching machine, so that the surface of an etching substrate 6 can be dried quickly, the, this monitoring mechanism of ICP high density plasma etching machine, possess and shorten the first length of connection, reduce the accident frequency of occurrence and the advantage of fast drying siltation liquid medicine, it fixes in a position to have solved the monitoring device on the traditional etching machine, can't remove, and the medicament spray set on the etching machine then can remove, in order to make the removal that spray set can be smooth, connecting wire between its controlling means and the spray set just needs very long, and the connecting wire overlength then twines together easily, the accident appears easily, not only can cause the damage to the etching machine, still threaten user's life safety, and except that monitoring device can't remove, spray set spun liquid medicine is behind the sculpture, probably can appear remaining and siltation, be difficult to dry, thereby cause the influence to the etching effect of next time, reduce the problem of sculpture efficiency.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
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