Wafer-level polarizing optical device and preparation method thereof
阅读说明:本技术 晶圆级偏振光学器件及其制备方法 (Wafer-level polarizing optical device and preparation method thereof ) 是由 鞠晓山 李宗政 冯坤亮 于 2020-06-15 设计创作,主要内容包括:本发明涉及一种晶圆级偏振光学器件及其制备方法,晶圆级偏振光学器件包括:基底,具有承载面,承载面具有第一方向和第二方向;多个沿第一方向阵列分布的直角三棱柱,设置在承载面,且与基底为一体式结构,每一直角三棱柱沿平行于第二方向的方向延伸,且具有第一表面和第二表面,第一表面垂直连接于承载面,第二表面连接第一表面和承载面,且与第一表面呈设定夹角,将基底和多个直角三棱柱设置为一体式结构,以使得在升降温曲线测试时直角三棱柱不会从基底上脱落,从而使得晶圆级偏振光学器件的结构稳定性较好,产品良率较高,耐用性较强,并且采用同一种材料一体成型,结构及制备工艺较为简单。(The invention relates to a wafer-level polarization optical device and a preparation method thereof, wherein the wafer-level polarization optical device comprises: the substrate is provided with a bearing surface, and the bearing surface is provided with a first direction and a second direction; a plurality of right angle triangular prism along first direction array distribution, the setting is at the loading end, and with basement formula structure as an organic whole, each right angle triangular prism extends along the direction that is on a parallel with the second direction, and first surface and second surface have, first surface connects perpendicularly in the loading end, first surface and loading end are connected to the second surface, and be the settlement contained angle with the first surface, set up basement and a plurality of right angle triangular prism into the integral type structure, so that the right angle triangular prism can not follow the basement and drop when rising and falling temperature curve test, thereby make wafer level polarization optical device's structural stability better, the product yield is higher, the durability is stronger, and adopt same material integrated into one piece, structure and preparation technology are comparatively simple.)
1. A wafer-level polarizing optical device, comprising:
the device comprises a substrate, a first fixing device and a second fixing device, wherein the substrate is provided with a bearing surface which is provided with a first direction and a second direction which are vertical to each other;
a plurality of right angle triangular prism along first direction array distribution sets up the loading end, and with basement formula structure as an organic whole, each right angle triangular prism extends along the direction that is on a parallel with the second direction, and has first surface and second surface, first surface connect perpendicularly in the loading end, the second surface is connected the first surface with the loading end, and with the first surface is the settlement contained angle.
2. The wafer-level polarizing optical device of claim 1, wherein the set angle is 32 ° -38 °.
3. The wafer-level polarizing optical device of claim 1, wherein a phase retardation layer is disposed on the second surface.
4. The wafer-level polarizing optical device of claim 3, wherein the set angle is 49 ° -55 °.
5. The wafer-level polarizing optical device of claim 2 or 3, wherein all the first surfaces have the same extension height with respect to the carrying surface along a direction perpendicular to the carrying surface.
6. The wafer-level polarization optical device according to claim 2 or 3, wherein at least one of the right triangular prisms has an extension height of the first surface different from an extension height of the rest positions with respect to the carrying surface in a direction perpendicular to the carrying surface.
7. The wafer-level polarizing optical device of claim 6, wherein at least one of the first surfaces has an extended height in a cross-section perpendicular to the second direction that is different from the extended height of the remaining first surfaces.
8. A method of fabricating a wafer-level polarizing optical device according to any one of claims 1 to 7, comprising:
coating a layer of glue material on the substrate;
forming a substrate layer and a right-angle triangular prism layer on the substrate layer by nanoimprint lithography;
dicing the base layer and the right-angled triangular prism layer to form wafer-level polarizing optics, separating the wafer-level polarizing optics from the substrate.
9. The method of claim 8, further comprising forming a phase retardation film layer on the right triangular prism layer by evaporation before separating the wafer-level polarization optical device from the substrate.
10. The method of claim 8, wherein the glue material is a UV curable glue, an OC glue or a thermal glue.
Technical Field
The invention relates to the technical field of display, in particular to a wafer-level polarization optical device and a preparation method thereof.
Background
In the field of display technology, wafer-level polarization optical devices are used to achieve light polarization effects, for example, a polarizer is used to convert natural light into polarized light vibrating along some directions, to achieve shielding of incident light, and to retain light in a desired vibration direction, and for example, a wave plate uses a birefringent material to adjust the polarization state of a light beam, to achieve phase shift, and commonly used wave plates include half-wave plates and quarter-wave plates. The half-wave plate, the quarter-wave plate and the polaroid are matched, so that any polarization state can be generated.
The existing polaroid mainly comprises glass and a metal wire grating arranged on the glass, but because the adhesive force of the metal wire grating is limited, the metal wire grating is subjected to thermal expansion during a temperature rise and drop curve test, and the adhesive force change can cause the metal wire grating to be stripped, so that the polaroid is damaged, and the polarization effect is influenced; the existing wave plate birefringence uniaxial crystal (such as quartz crystal) is manufactured, the thickness of the wave plate, the material and the working wavelength have great influence on the offset of the phase, but the thickness of the existing uniaxial crystal and the precision of the cutting angle are not easy to control, so that the accuracy of the phase offset is poor, and the polarization effect is influenced.
Disclosure of Invention
Therefore, it is necessary to provide a wafer-level polarization optical device and a method for manufacturing the same, aiming at the problem of poor structural stability of the wafer-level polarization optical device.
A wafer-level polarizing optical device, comprising:
the device comprises a substrate, a first substrate and a second substrate, wherein the substrate is provided with a bearing surface which is provided with a first direction and a second direction;
a plurality of right angle triangular prism along first direction array distribution sets up the loading end, and with basement formula structure as an organic whole, each right angle triangular prism extends along the direction that is on a parallel with the second direction, and has first surface and second surface, first surface connect perpendicularly in the loading end, the second surface is connected the first surface with the loading end, and with the first surface is the settlement contained angle.
Above-mentioned wafer level polarization optical device, because second surface and first surface are the setting for contained angle setting, the incident light of perpendicular to loading surface shines on the second surface, take place the reflection on the second surface, continue transmission in the right angle triangular prism, shine on the first surface, then take place the reflection on the first surface, continue transmission in the right angle triangular prism, and pass through the second surface perpendicularly, the incident light is complementary with the setting for contained angle between second surface and the first surface through the polarized light of formation behind the right angle triangular prism and the polarization angle between the incident light, make incident light take place the polarization. Set up basement and right angle triangular prism into the integral type structure to make the right angle triangular prism can not follow the basement and drop when rising the temperature curve test, thereby make wafer level polarization optical device's structural stability better, the product yield is higher, and the durability is stronger, and adopt same kind of material integrated into one piece, structure and preparation technology are comparatively simple.
In one embodiment, the set included angle is 32-38 degrees.
The wafer-level polarization optical device forms the polarizer with good polarization effect by limiting the set included angle between the second surface and the first surface to be 32-38 degrees.
In one embodiment, a phase retardation layer is disposed on the second surface.
In the wafer-level polarization optical device, the phase delay layer is arranged on the second surface to form the wave plate.
In one embodiment, the set included angle is 49-55 degrees.
The wafer-level polarization optical device improves the phase delay effect by limiting the set included angle between the second surface and the first surface to be 49-55 degrees.
In one embodiment, the extending heights of all the first surfaces are the same along the direction perpendicular to the bearing surface by taking the bearing surface as a reference.
The wafer-level polarization optical device is simple in structure and convenient to manufacture, and the heights of the first surfaces are limited to be the same, so that the regularly-arranged right-angled triangular prisms are formed.
In one embodiment, in a direction perpendicular to the bearing surface, with the bearing surface as a reference, the extending height of at least one first surface in the right triangular prism is different from the extending height of the first surface at the rest positions.
According to the wafer-level polarization optical device, the height of the first surface of the right-angle triangular prism in the extending direction parallel to the second direction is limited to form the irregularly-arranged right-angle triangular prisms, and the wafer-level polarization optical device is suitable for different application scenes.
In one embodiment, an extension height of at least one of the first surfaces in a cross section perpendicular to the second direction is different from an extension height of the remaining first surfaces.
The wafer-level polarization optical device is suitable for different application scenes by limiting the difference of the heights of the first surface along the direction vertical to the bearing surface on the cross section vertical to the second direction to form the irregularly-arranged right-angled triangular prism.
In addition, the invention also provides a method for manufacturing the wafer-level polarization optical device according to any one of the above technical schemes, which comprises the following steps:
step S901, coating a layer of adhesive material on a substrate;
step S902, a substrate layer and a right-angled triangular prism layer positioned on the substrate layer are molded by nano-imprinting;
step S903, cutting the substrate layer and the right-angle triangular prism layer to form a wafer-level polarizing optical device, and separating the wafer-level polarizing optical device from the substrate.
The preparation method of the wafer-level polarization optical device comprises the following steps of firstly, coating a layer of glue material on a substrate in the step S901; then, through the step S902, a substrate layer with a set thickness is formed by adopting nano-imprinting, and the right-angle triangular prism layer is continuously imprinted; next, in step S903, the base layer and the right-angled triangular prism layer formed in step S902 are cut to form a plurality of wafer-level polarizing optical devices, and the wafer-level polarizing optical devices are separated from the substrate, thereby completing the preparation of the wafer-level polarizing optical devices. The preparation method is simple and easy to realize, the substrate layer and the right-angle triangular prism layer are integrally formed by the same glue material, the prepared wafer-level polarizing optical device is simple in structure, and the right-angle triangular prism cannot fall off from the substrate when a temperature rise and fall curve test is carried out, so that the wafer-level polarizing optical device is good in structural stability, high in product yield and strong in durability, the size of the right-angle triangular prism can be accurately controlled through nanoimprint, and the polarizing effect of the wafer-level polarizing optical device is good.
In one embodiment, before separating the wafer-level polarization optical device from the substrate, a phase retardation film layer is formed on the right triangular prism layer by evaporation.
The method for manufacturing the wafer-level polarization optical device forms a phase delay film layer on the right-angle triangular prism layer by evaporation, and the method for manufacturing the phase delay film layer includes, but is not limited to, an evaporation process.
In one embodiment, the adhesive material is a UV curable adhesive, an OC adhesive, or a heat sensitive adhesive.
According to the preparation method of the wafer-level polarization optical device, the material of the rubber material is limited, so that the wafer-level polarization optical device can be conveniently processed and prepared.
Drawings
FIG. 1 is a schematic diagram of a wafer-level polarization optical device according to the present invention;
FIG. 2 is a cross-sectional view of a wafer-level polarizing optic according to the present invention;
FIG. 3 is a schematic diagram of an optical path of a wafer-level polarization optical device according to the present invention;
FIG. 4 is a schematic diagram of another wafer-level polarizing optical device according to the present invention;
FIG. 5 is a cross-sectional view of another wafer-level polarizing optic provided by the present invention;
FIG. 6 is a schematic diagram of an optical path of a wafer-level polarization optical device according to the present invention;
FIG. 7 is a top view of yet another wafer level polarizing optic provided by the present invention;
FIG. 8 is a cross-sectional view of yet another wafer-level polarizing optical device provided by the present invention;
fig. 9 is a flowchart of a method for manufacturing a wafer-level polarization optical device according to the present invention.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting of the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like as used herein are for illustrative purposes only and do not denote a unique embodiment.
As shown in fig. 1, 2 and 3, the present invention provides a wafer-level polarization
the
the plurality of right-angle
In the wafer-level polarization
The right
The wafer-level polarization
The right
The wafer-level polarization
In a preferred embodiment, as shown in fig. 4, 5 and 6, the set angle between the
The wafer-level polarization
Specifically, as shown in fig. 2, the extending heights of all the
Above-mentioned wafer level polarization
To facilitate expanding the application range of the wafer-level polarization
The wafer-level polarization
To further facilitate expanding the application range of the wafer-level polarization
The wafer-level polarization
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