阅读说明：本技术 一种散射参数模型的获取方法及装置 (Method and device for acquiring scattering parameter model ) 是由 罗兴华 张晓涵 薛俊 于 2020-06-29 设计创作，主要内容包括：本申请适用于电路建模和电路检测的技术领域,提供了一种散射参数模型的获取方法及装置,所述方法包括：获取单端口的时域反射曲线,所述单端口为双端口网络传输通道的一端,所述时域反射曲线为所述单端口的阻抗随时间变化的曲线；根据所述时域反射曲线在多个时段的阻抗值,建立双端口散射参数模型,所述双端口散射参数模型包括多段传输线,每段所述传输线用于表示不同时段的特征阻抗值。由于时域反射曲线仅需连接单个端口,即可测得。故本申请根据时域反射曲线在不同时段的阻抗值,建立双端口散射参数模型。进而得到双端口S参数。实现了获取双端口S参数的方法。(The application is applicable to the technical field of circuit modeling and circuit detection, and provides a method and a device for acquiring a scattering parameter model, wherein the method comprises the following steps: acquiring a time domain reflection curve of a single port, wherein the single port is one end of a dual-port network transmission channel, and the time domain reflection curve is a curve of impedance of the single port changing along with time; and establishing a dual-port scattering parameter model according to the impedance values of the time domain reflection curve in a plurality of time periods, wherein the dual-port scattering parameter model comprises a plurality of sections of transmission lines, and each section of transmission line is used for representing the characteristic impedance value in different time periods. The time domain reflection curve can be measured only by connecting a single port. Therefore, the dual-port scattering parameter model is established according to the impedance values of the time domain reflection curve in different time periods. And then obtaining the double-port S parameter. The method for acquiring the double-port S parameter is realized.)

1. A method for obtaining a scattering parameter model, the method comprising:

acquiring a time domain reflection curve of a single port, wherein the single port is one end of a dual-port network transmission channel, and the time domain reflection curve is a curve of impedance of the single port changing along with time;

and establishing a dual-port scattering parameter model according to the impedance values of the time domain reflection curve in a plurality of time periods, wherein the dual-port scattering parameter model comprises a plurality of sections of transmission lines, and each section of transmission line is used for representing the characteristic impedance value in different time periods.

2. The method of claim 1, wherein said establishing a two-port scattering parametric model from impedance values of said time-domain reflection curve over a plurality of time periods comprises:

discretizing the time domain reflection curve to obtain a plurality of continuous discrete line segments on a time sequence;

and establishing a dual-port scattering parameter model according to the impedance value of each discrete line segment and the time period corresponding to the discrete line segment.

3. The method of claim 2, wherein said establishing a two-port scattering parametric model based on the impedance value of each of said discrete line segments and said time period comprises:

determining the characteristic impedance value of the transmission line according to the impedance value of the discrete line segment, and taking the time interval as the delay time of the transmission line or the length of the transmission line to obtain the transmission line equivalent to the discrete line segment;

and cascading the transmission lines to obtain the dual-port scattering parameter model.

4. The method of claim 3, wherein the taking the period as a delay duration of the transmission line or a length of the transmission line comprises:

and multiplying the delay time length by the propagation speed of the electromagnetic wave in the transmission line to obtain the length of the transmission line.

5. The method of claim 1, wherein prior to said obtaining a time domain reflection curve for a single port, further comprising:

acquiring scattering parameters of the single port;

and converting the scattering parameters into the time domain reflection curve.

6. The method of claim 5, wherein said converting the scattering parameters to the time domain reflection curve comprises:

carrying out Fourier transform on the scattering parameters to obtain a first numerical value;

multiplying the first numerical value by a step signal to obtain a transmission parameter;

and obtaining the time domain reflection curve according to the transmission parameters.

7. The method of any of claims 1 to 6, further comprising, after said establishing a two-port scattering parametric model from impedance values of said time-domain reflection curve over a plurality of time periods:

and calculating the scattering parameters of the dual-port network according to the dual-port scattering parameter model.

8. An apparatus for obtaining a scattering parameter model, the apparatus comprising:

the device comprises an acquisition unit, a processing unit and a processing unit, wherein the acquisition unit is used for acquiring a time domain reflection curve of a single port, the single port is one end of a dual-port network transmission channel, and the time domain reflection curve is a curve of impedance of the single port changing along with time;

and the establishing unit is used for establishing a dual-port scattering parameter model according to the impedance values of the time domain reflection curve in a plurality of time periods, the dual-port scattering parameter model comprises a plurality of sections of transmission lines, and each section of transmission line is used for representing the characteristic impedance value in different time periods.

9. A terminal device comprising a memory, a processor and a computer program stored in the memory and executable on the processor, characterized in that the processor implements the steps of the method according to any of claims 1 to 7 when executing the computer program.

10. A computer-readable storage medium, in which a computer program is stored which, when being executed by a processor, carries out the steps of the method according to any one of claims 1 to 7.

Technical Field

The application belongs to the technical field of circuit modeling and circuit detection, and particularly relates to a method and a device for acquiring a scattering parameter model.

Background

The scattering parameter, also called S-parameter, is an important parameter in microwave transmission. The S parameter describes the frequency domain characteristic of the transmission channel, and when the simulation analysis of the serial link is carried out, the accurate S parameter of the channel is an important link. The traditional method for acquiring the S parameter comprises the following steps: and acquiring related parameters (including packaging, bonding wire and pin modeling), and simulating the related parameters to obtain the double-port S parameters of the double-port S parameters.

In the process of actually acquiring the S parameter, for example: when the network transmission channel is a dual port, the port at one end is located inside the network, and the inside of the network is an area packaged in advance, so that parameters of the network such as packaging, bonding wires, pin modeling and the like cannot be known. Therefore, a dual-port S parameter model and thus a dual-port S parameter cannot be obtained.

Disclosure of Invention

In view of this, the embodiments of the present application provide a method and an apparatus for acquiring a scattering parameter model, which can solve the problem that in the process of actually acquiring S parameters, for example: when the network transmission channel is a dual port, the port at one end is located inside the network, and the inside of the network is an area packaged in advance, so that parameters of the network such as packaging, bonding wires, pin modeling and the like cannot be known. Therefore, a double-port S parameter model can not be obtained, and further a double-port S parameter can not be obtained.

A first aspect of an embodiment of the present application provides a method for obtaining a scattering parameter model, where the method includes:

acquiring a time domain reflection curve of a single port, wherein the single port is one end of a dual-port network transmission channel, and the time domain reflection curve is a curve of impedance of the single port changing along with time;

and establishing a dual-port scattering parameter model according to the impedance values of the time domain reflection curve in a plurality of time periods, wherein the dual-port scattering parameter model comprises a plurality of sections of transmission lines, and each section of transmission line is used for representing the characteristic impedance value in different time periods.

A second aspect of the embodiments of the present application provides an apparatus for obtaining a scattering parameter model, where the apparatus includes:

the device comprises an acquisition unit, a processing unit and a processing unit, wherein the acquisition unit is used for acquiring a time domain reflection curve of a single port, the single port is one end of a dual-port network transmission channel, and the time domain reflection curve is a curve of impedance of the single port changing along with time;

and the establishing unit is used for establishing a dual-port scattering parameter model according to the impedance values of the time domain reflection curve in a plurality of time periods, the dual-port scattering parameter model comprises a plurality of sections of transmission lines, and each section of transmission line is used for representing the characteristic impedance value in different time periods.

A third aspect of embodiments of the present application provides a terminal device, including a memory, a processor, and a computer program stored in the memory and executable on the processor, where the processor implements the steps of the method according to the first aspect when executing the computer program.

A fourth aspect of embodiments of the present application provides a computer-readable storage medium, which stores a computer program, and the computer program, when executed by a processor, implements the steps of the method according to the first aspect.

Compared with the prior art, the embodiment of the application has the advantages that: the time domain reflection curve of the single port is obtained. And establishing a dual-port scattering parameter model according to the impedance values of the time domain reflection curve in a plurality of time periods. The time domain reflection curve can be measured only by connecting a single port. Therefore, the dual-port scattering parameter model is established according to the impedance values of the time domain reflection curve in different time periods. And then obtaining the double-port S parameter. The method for acquiring the double-port S parameter is realized.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiments or the related technical descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1 shows a schematic flow chart of a method for obtaining a scattering parameter model provided in the present application;

FIG. 2 is a schematic diagram illustrating a time-domain reflection curve in a method for obtaining a scattering parameter model according to the present application;

FIG. 3 is a schematic diagram illustrating a dispersion curve in a method for obtaining a scattering parameter model provided in the present application;

FIG. 4 is a schematic diagram of a two-port scattering parametric model in a method for obtaining a scattering parametric model provided in the present application;

FIG. 5 is a detailed schematic flow chart diagram of a method for obtaining a scattering parameter model provided in the present application;

FIG. 6 is a detailed schematic flow chart diagram of a method for obtaining a scattering parameter model provided in the present application;

FIG. 7 is a detailed schematic flow chart diagram of another method for obtaining a scattering parameter model provided herein;

FIG. 8 is a detailed schematic flow chart diagram of another method for obtaining a scattering parameter model provided herein;

FIG. 9 is a schematic diagram of an apparatus for obtaining a scattering parameter model provided in the present application;

fig. 10 shows a schematic diagram of a terminal device according to an embodiment of the present application.

Detailed Description

In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the present application. It will be apparent, however, to one skilled in the art that the present application may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present application with unnecessary detail.

It will be understood that the terms "comprises" and/or "comprising," when used in this specification and the appended claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.

It should also be understood that the term "and/or" as used in this specification and the appended claims refers to and includes any and all possible combinations of one or more of the associated listed items.

As used in this specification and the appended claims, the term "if" may be interpreted contextually as "when", "upon" or "in response to" determining "or" in response to detecting ". Similarly, the phrase "if it is determined" or "if a [ described condition or event ] is detected" may be interpreted contextually to mean "upon determining" or "in response to determining" or "upon detecting [ described condition or event ]" or "in response to detecting [ described condition or event ]".

Furthermore, in the description of the present application and the appended claims, the terms "first," "second," "third," and the like are used for distinguishing between descriptions and not necessarily for describing or implying relative importance.

Reference throughout this specification to "one embodiment" or "some embodiments," or the like, means that a particular feature, structure, or characteristic described in connection with the embodiment is included in one or more embodiments of the present application. Thus, appearances of the phrases "in one embodiment," "in some embodiments," "in other embodiments," or the like, in various places throughout this specification are not necessarily all referring to the same embodiment, but rather "one or more but not all embodiments" unless specifically stated otherwise. The terms "comprising," "including," "having," and variations thereof mean "including, but not limited to," unless expressly specified otherwise.

The method and the device are used for calculating the S parameter model and the S parameter of the dual-port network. A two-port network is a network of two ports connected to external circuits, called a two-port network, one of which is connected to a power supply, called an input. The other port is connected to a load, called the output.

The scattering parameter, also called S-parameter, is an important parameter in microwave transmission. The S parameter describes the frequency domain characteristic of the transmission channel, and when the simulation analysis of the serial link is carried out, the accurate S parameter of the channel is an important link. The traditional method for acquiring the S parameter comprises the following steps: and acquiring related parameters (including packaging, bonding wire and pin modeling), and simulating the related parameters to obtain the double-port S parameters of the double-port S parameters.

In the process of actually acquiring the S parameter, for example: when the network transmission channel is a dual port, the port at one end is located inside the network, and the inside of the network is an area packaged in advance, so that parameters of the network such as packaging, bonding wires, pin modeling and the like cannot be known. Therefore, a dual-port S parameter model and thus a dual-port S parameter cannot be obtained.

In view of this, embodiments of the present application provide a method and an apparatus for obtaining a scattering parameter model, which can solve the above technical problems.

Referring to fig. 1, fig. 1 shows a schematic flow chart of a method for obtaining a scattering parameter model provided in the present application.

As shown in fig. 1, the method may include the steps of:

step 101, obtaining a time domain reflection curve of a single port, wherein the single port is one end of a dual-port network transmission channel, and the time domain reflection curve is a curve of impedance of the single port changing along with time.

Time Domain Reflectometry (TDR) is used to detect impedance in a circuit. And the time domain reflection curve is detected according to a time domain reflection technology. The time domain reflection curve is used to represent the impedance of a two-port chip as a function of time. The time domain reflectometry can be used to measure the time domain reflectometry.

In this embodiment, the time domain reflection curve is obtained by obtaining a pre-stored time domain reflection curve in a hard disk or a memory, or by connecting a tester. The time domain reflection curve is a time domain reflection curve corresponding to a single port in the dual-port network transmission channel. The single port is one end of a dual-port network transmission channel, for example: a port at one end of a chip pin or other port to which an external device can be connected, etc.

Time domain reflectometry is performed by sending a pulse or step signal into the transmission path. When the impedance of a transmission path changes, a part of the signal is reflected, and the other part of the signal continues to be transmitted along the transmission path. The time domain reflectometer measures the voltage amplitude of the reflected wave, and then calculates the change of the impedance. And the time domain reflectometer measures the time difference value from the reflection point to the signal output point, and further calculates the position of the impedance change point in the transmission path.

As an embodiment of the present application, the time domain reflection curve may also be calculated by the scattering parameters (S-parameters) of a single port in a two-port network.

Exemplarily, the time domain reflection curve is shown in fig. 2, please refer to fig. 2, and fig. 2 shows a schematic diagram of the time domain reflection curve in the method for obtaining a scattering parameter model provided in the present application. As shown in fig. 2, the horizontal axis represents time, and the time length is 27 picoseconds (ps). The vertical axis represents the impedance of the two-port chip, which varies between 30 ohms (ohm) to 60 ohms (ohm).

And 102, establishing a dual-port scattering parameter model according to the impedance values of the time domain reflection curve in a plurality of time periods, wherein the dual-port scattering parameter model comprises a plurality of sections of transmission lines, and each section of transmission line is used for representing the characteristic impedance value in different time periods.

The time domain reflectometer calculates the position of an impedance change point in a transmission path according to the time difference value from a reflection point to a signal output point. Therefore, according to the above characteristics, the dual-port scattering parameter model is established according to the impedance values of the time-domain reflection curve at different time periods.

The process of establishing a two-port scattering parametric model is as follows: and discretizing the time domain reflection curve according to preset precision to obtain a plurality of continuous discrete line segments on the time sequence. For example, please refer to fig. 3, fig. 3 shows a schematic diagram of a dispersion curve in the method for acquiring a scattering parameter model provided in the present application. As shown in fig. 3, the time domain reflection curve is discretized into nine line segments, which are continuous in time series.

The impedance values corresponding to the nine line segments and the corresponding time periods are equivalent to the characteristic parameters (characteristic impedance and time delay) of the nine transmission lines. For example, please refer to fig. 4, fig. 4 shows a schematic diagram of a two-port scattering parametric model in the method for obtaining a scattering parametric model provided in the present application. As shown in fig. 4, the nine rectangles represent nine transmission lines (TLD1, TLD2, TLD3, TLD4, TLD5, TLD6, TLD7, TLD8, and TLD9), each having a corresponding characteristic impedance and delay duration. For example, the transmission line TLD1 has a characteristic impedance of 40 ohms and the transmission line TLD1 has a delay duration of 2 ps. Each transmission line is used for representing the characteristic impedance value and the duration of the corresponding line segment.

For example, as shown in fig. 3 and 4, fig. 4 is a two-port scattering parametric model obtained from fig. 3. The impedance of the first segment in fig. 3 is 40ohm, and the length of the segment is 2ps, which corresponds to the first transmission line TLD1 in fig. 4. The impedance of the second line segment in fig. 3 is 50ohm, and the length of the time segment is 2ps, which corresponds to the second transmission line TLD2 in fig. 4. The impedance value of the third segment in fig. 3 is 60ohm, and the length of the time interval is 8ps, which corresponds to the third transmission line TLD3 in fig. 4, and so on, so as to obtain nine transmission lines with nine segments in one-to-one correspondence. And cascading the transmission lines according to the time sequence of the discrete line segments to obtain a dual-port scattering parameter model.

In the present embodiment, a time domain reflection curve of a single port is obtained. And establishing a dual-port scattering parameter model according to the impedance values of the time domain reflection curve in a plurality of time periods. The time domain reflection curve can be measured only by connecting a single port. Therefore, the dual-port scattering parameter model is established according to the impedance values of the time domain reflection curve in different time periods. And then obtaining the double-port S parameter. The method for acquiring the double-port S parameter is realized.

Specifically, on the basis of the embodiment shown in fig. 1, the establishing a dual-port scattering parameter model according to the impedance values of the time-domain reflection curve in a plurality of time periods includes the following steps, please refer to fig. 5, and fig. 5 shows a specific schematic flowchart of an obtaining method of a scattering parameter model provided by the present application. Step 501 in this embodiment is the same as step 101 in the embodiment shown in fig. 1, and specific reference is made to the description related to step 101 in the embodiment shown in fig. 1, which is not repeated herein.

Step 501, a time domain reflection curve of a single port is obtained, the single port is one end of a dual-port network transmission channel, and the time domain reflection curve is a curve of impedance of the single port changing with time.

Step 502, discretizing the time domain reflection curve to obtain a plurality of discrete line segments continuous on a time sequence.

As one embodiment of the present application, emulation software may be invoked by a processor. Discretizing the time domain reflection curve through simulation software to obtain a plurality of continuous discrete line segments on a time sequence.

Step 503, establishing a dual-port scattering parameter model according to the impedance value of each discrete line segment and the time interval corresponding to the discrete line segment.

And equivalently replacing the impedance value of each discrete line segment and the time interval corresponding to the discrete line segment by the characteristic impedance value of the transmission line and the time delay duration of the transmission line to obtain a dual-port scattering parameter model.

In this embodiment, a plurality of discrete line segments continuous in a time sequence are obtained by discretizing the time domain reflection curve; and establishing a dual-port scattering parameter model according to the impedance value of each discrete line segment and the time period corresponding to the discrete line segment. Through the scheme, the double-port scattering parameter model is established. And then obtaining the double-port S parameter. The method for acquiring the double-port S parameter is realized.

Specifically, on the basis of the embodiment shown in fig. 5, the establishing a two-port scattering parameter model according to the impedance value of each discrete line segment and the time period includes the following steps, please refer to fig. 6, and fig. 6 shows a specific schematic flowchart of an obtaining method of a scattering parameter model provided by the present application. In this embodiment, steps 601 to 602 are the same as steps 101 to 102 in the embodiment shown in fig. 1, and specific reference is made to the description related to steps 101 to 102 in the embodiment shown in fig. 1, which is not repeated herein.

Step 601, obtaining a time domain reflection curve of a single port, where the single port is one end of a dual-port network transmission channel, and the time domain reflection curve is a curve of impedance of the single port changing with time.

Step 602, discretizing the time domain reflection curve to obtain a plurality of discrete line segments continuous on a time sequence.

Step 603, determining the characteristic impedance value of the transmission line according to the impedance value of the discrete line segment, and taking the time interval as the delay time of the transmission line or the length of the transmission line to obtain the transmission line equivalent to the discrete line segment.

Specifically, the taking the time period as the delay time of the transmission line or the length of the transmission line includes: and multiplying the delay time length by the propagation speed of the electromagnetic wave in the transmission line to obtain the length of the transmission line.

And step 604, cascading the transmission lines to obtain the dual-port scattering parameter model.

The transmission lines are cascaded in time order between nine line segments to obtain a two-port scattering parametric model as shown in fig. 4.

In this embodiment, the characteristic impedance value of the transmission line is determined according to the impedance value of the discrete line segment, and the time interval is used as the delay time of the transmission line or the length of the transmission line, so as to obtain the transmission line equivalent to the discrete line segment; and cascading the transmission lines to obtain the dual-port scattering parameter model. Through the scheme, the double-port scattering parameter model is established. And then obtaining the double-port S parameter. The method for acquiring the double-port S parameter is realized.

Optionally, on the basis of the embodiment shown in fig. 1, before the obtaining of the time domain reflection curve of the single port, the following steps are further included, please refer to fig. 7, and fig. 7 shows a specific schematic flowchart of another method for obtaining a scattering parameter model provided by the present application. In this embodiment, steps 703 to 704 are the same as steps 101 to 102 in the embodiment shown in fig. 1, and specific reference is made to the description related to steps 101 to 102 in the embodiment shown in fig. 1, which is not repeated herein.

And 701, acquiring the scattering parameters of the single port.

And the scattering parameters are measured by connecting one end of the dual-port network transmission channel through a vector network analyzer.

The processor acquires pre-stored scattering parameters in a hard disk or a memory, or is connected with the tester to acquire the scattering parameters of a single port.

Step 702, converting the scattering parameters into the time domain reflection curve.

Specifically, the converting the scattering parameters into the time domain reflection curve includes: and carrying out Fourier transform on the scattering parameters to obtain a first numerical value. And multiplying the first value by the step signal to obtain a transmission parameter (namely T parameter). And obtaining the time domain reflection curve according to the transmission parameters.

As an embodiment of the present application, the processor may also invoke existing software, by which the scattering parameters are converted into time-domain reflection curves.

Step 703, obtaining a time domain reflection curve of a single port, where the single port is one end of a dual-port network transmission channel, and the time domain reflection curve is a curve of impedance of the single port changing with time.

Step 704, establishing a dual-port scattering parameter model according to the impedance values of the time domain reflection curve in a plurality of time periods, wherein the dual-port scattering parameter model comprises a plurality of sections of transmission lines, and each section of transmission line is used for representing the characteristic impedance value in different time periods.

In this embodiment, the scattering parameter of the single port is obtained. And converting the scattering parameters into the time domain reflection curve. And calculating a dual-port scattering parameter model through the time domain reflection curve. The time domain reflection curve can be measured only by connecting a single port. Therefore, the dual-port scattering parameter model is established according to the impedance values of the time domain reflection curve in different time periods. And then obtaining the double-port S parameter. The method for acquiring the double-port S parameter is realized.

Optionally, on the basis of the embodiments shown in fig. 1, fig. 5, fig. 6, fig. 7, and after the two-port scattering parameter model is established according to the impedance values of the time-domain reflection curve at multiple time intervals, the method further includes the following steps, please refer to fig. 8, and fig. 8 shows a specific schematic flowchart of another method for obtaining a scattering parameter model provided in the present application. In this embodiment, steps 801 to 802 are the same as steps 101 to 102 in the embodiment shown in fig. 1, and specific reference is made to the description related to steps 101 to 102 in the embodiment shown in fig. 1, which is not repeated herein.

Step 801, obtaining a time domain reflection curve of a single port, where the single port is one end of a dual-port network transmission channel, and the time domain reflection curve is a curve of impedance of the single port changing with time.

Step 802, establishing a dual-port scattering parameter model according to the impedance values of the time domain reflection curve in a plurality of time periods, wherein the dual-port scattering parameter model comprises a plurality of sections of transmission lines, and each section of transmission line is used for representing the characteristic impedance value in different time periods.

And 803, calculating the scattering parameters of the two-port network according to the two-port scattering parameter model.

The S parameter includes four parameters S12, S21, S11 and S22. S12 is the reverse transmission coefficient, i.e. isolation. S21 is the forward transmission coefficient, i.e., the gain. S11 is the input reflection coefficient, i.e., the input return loss, and S22 is the output reflection coefficient, i.e., the output return loss.

The S parameter calculation method of the dual-port network comprises the following steps: s11, b1/a1, represents the reflection coefficient of port 1, commonly referred to as return loss (ReturnLoss). S21-b 2/a 1-output/input power represents the forward transmission coefficient at port 1 to port 2, commonly referred to as insertion loss (InsertLoss). S22 b2/a2 represents the reflection coefficient of port 2. S12 b1/a2 output power/input power, indicating the reverse transmission coefficient from port 2 to port 1.

Setting the incident power and the input power of the dual-port network, and calculating the reflected power and the output power according to the impedance and the time delay of a plurality of transmission lines in the dual-port scattering parameter model. And substituting the incident power, the input power, the reflected power and the output power into the formula to calculate the scattering parameters of the dual-port chip.

As an embodiment of the present application, simulation software may also be invoked to calculate the S parameter. And the simulation software calculates the S parameter of the dual-port network according to the dual-port scattering parameter model.

In the present embodiment, a time domain reflection curve of a single port is obtained. And establishing a dual-port scattering parameter model according to the impedance values of the time domain reflection curve in a plurality of time periods. And calculating the scattering parameters of the dual-port network according to the dual-port scattering parameter model. The time domain reflection curve can be measured only by connecting a single port. Therefore, the dual-port scattering parameter model is established according to the impedance values of the time domain reflection curve in different time periods. And then obtaining the double-port S parameter. The method for acquiring the double-port S parameter is realized.

Fig. 9 shows a schematic diagram of an apparatus for acquiring a scattering parameter model 9, where fig. 9 shows a schematic diagram of an apparatus for acquiring a scattering parameter model, and the apparatus for acquiring a scattering parameter model shown in fig. 9 includes:

an obtaining unit 91, configured to obtain a time domain reflection curve of a single port, where the single port is one end of a dual-port network transmission channel, and the time domain reflection curve is a curve of impedance of the single port changing with time;

a building unit 92, configured to build a dual-port scattering parametric model according to the impedance values of the time-domain reflection curve in multiple time periods, where the dual-port scattering parametric model includes multiple transmission lines, and each transmission line is used to represent a characteristic impedance value in a different time period

The device for acquiring the scattering parameter model provided by the application acquires the time domain reflection curve of a single port. And establishing a dual-port scattering parameter model according to the impedance values of the time domain reflection curve in a plurality of time periods. The time domain reflection curve can be measured only by connecting a single port. Therefore, the dual-port scattering parameter model is established according to the impedance values of the time domain reflection curve in different time periods. And then obtaining the double-port S parameter. The method for acquiring the double-port S parameter is realized.

It should be understood that, the sequence numbers of the steps in the foregoing embodiments do not imply an execution sequence, and the execution sequence of each process should be determined by its function and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present application.

Fig. 10 shows a schematic diagram of a terminal device according to an embodiment of the present application. As shown in fig. 10, a terminal device 100 of this embodiment includes: a processor 1000, a memory 1001 and a computer program 1002, such as an acquisition program of a scattering parameter model, stored in said memory 1001 and executable on said processor 1000. The processor 1000, when executing the computer program 1002, implements the steps in each of the above-described embodiments of a method for obtaining a scattering parameter model, such as the steps 101 to 102 shown in fig. 1. Alternatively, the processor 1000, when executing the computer program 1002, implements the functions of the units in the above-described device embodiments, such as the units 91 to 92 shown in fig. 9.

Illustratively, the computer program 1002 may be divided into one or more units, which are stored in the memory 1001 and executed by the processor 1000 to accomplish the present application. The one or more units may be a series of computer program instruction segments capable of performing specific functions, which are used to describe the execution process of the computer program 1002 in the terminal device 100. For example, the computer program 1002 may be divided into units with specific functions as follows:

the device comprises an acquisition unit, a processing unit and a processing unit, wherein the acquisition unit is used for acquiring a time domain reflection curve of a single port, the single port is one end of a dual-port network transmission channel, and the time domain reflection curve is a curve of impedance of the single port changing along with time;

the establishing unit is used for establishing a dual-port scattering parameter model according to the impedance values of the time domain reflection curve in a plurality of time periods, the dual-port scattering parameter model comprises a plurality of sections of transmission lines, and each section of transmission line is used for representing the characteristic impedance value of different time periods

The terminal device 100 may be a computing device such as a mobile terminal, a desktop computer, a notebook, a palm computer, and a cloud server. The terminal device may include, but is not limited to, a processor 1000, and a memory 1001. Those skilled in the art will appreciate that fig. 10 is merely an example of one type of terminal device 100 and is not intended to limit one type of terminal device 100 and may include more or fewer components than shown, or some components may be combined, or different components, for example, the one type of terminal device may also include input-output devices, network access devices, buses, etc.

The Processor 1000 may be a Central Processing Unit (CPU), other general purpose Processor, a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), an off-the-shelf Programmable Gate Array (FPGA) or other Programmable logic device, discrete Gate or transistor logic, discrete hardware components, etc. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like.

The storage 1001 may be an internal storage unit of the terminal device 100, such as a hard disk or a memory of the terminal device 100. The memory 1001 may also be an external storage device of the terminal device 100, such as a plug-in hard disk, a Smart Media Card (SMC), a Secure Digital (SD) Card, a Flash memory Card (Flash Card), or the like, provided on the terminal device 100. Further, the memory 1001 may also include both an internal storage unit and an external storage device of the terminal device 100. The memory 1001 is used for storing the computer program and other programs and data required by the kind of terminal equipment. The memory 1001 may also be used to temporarily store data that has been output or is to be output.

It will be apparent to those skilled in the art that, for convenience and brevity of description, only the above-mentioned division of the functional units and modules is illustrated, and in practical applications, the above-mentioned function distribution may be performed by different functional units and modules according to needs, that is, the internal structure of the apparatus is divided into different functional units or modules to perform all or part of the above-mentioned functions. Each functional unit and module in the embodiments may be integrated in one processing unit, or each unit may exist alone physically, or two or more units are integrated in one unit, and the integrated unit may be implemented in a form of hardware, or in a form of software functional unit. In addition, specific names of the functional units and modules are only for convenience of distinguishing from each other, and are not used for limiting the protection scope of the present application. The specific working processes of the units and modules in the system may refer to the corresponding processes in the foregoing method embodiments, and are not described herein again.

In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and reference may be made to the related descriptions of other embodiments for parts that are not described or illustrated in a certain embodiment.

Those of ordinary skill in the art will appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware or combinations of computer software and electronic hardware. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the implementation. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present application.

In the embodiments provided in the present application, it should be understood that the disclosed terminal device and method may be implemented in other ways. For example, the above-described terminal device embodiments are merely illustrative, and for example, the division of the modules or units is only one logical function division, and there may be other divisions when actually implemented, for example, a plurality of units or components may be combined or may be integrated into another system, or some features may be omitted or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, devices or units, and may be in an electrical, mechanical or other form.

The units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.

In addition, functional units in the embodiments of the present application may be integrated into one processing unit, or each unit may exist alone physically, or two or more units are integrated into one unit. The integrated unit can be realized in a form of hardware, and can also be realized in a form of a software functional unit.

The integrated unit, if implemented in the form of a software functional unit and sold or used as a stand-alone product, may be stored in a computer readable storage medium. Based on such understanding, all or part of the flow in the method of the embodiments described above can be realized by a computer program, which can be stored in a computer-readable storage medium and can realize the steps of the embodiments of the methods described above when the computer program is executed by a processor. Wherein the computer program comprises computer program code, which may be in the form of source code, object code, an executable file or some intermediate form, etc. The computer-readable medium may include: any entity or device capable of carrying the computer program code, recording medium, usb disk, removable hard disk, magnetic disk, optical disk, computer Memory, Read-Only Memory (ROM), Random Access Memory (RAM), electrical carrier wave signals, telecommunications signals, software distribution medium, and the like. It should be noted that the computer readable medium may contain content that is subject to appropriate increase or decrease as required by legislation and patent practice in jurisdictions, for example, in some jurisdictions, computer readable media does not include electrical carrier signals and telecommunications signals as is required by legislation and patent practice.

The above-mentioned embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present application and are intended to be included within the scope of the present application.