阅读说明：本技术 三轴磁场传感器 (Three-axis magnetic field sensor ) 是由 李大来 蒋乐跃 于 2020-06-11 设计创作，主要内容包括：本发明提供一种三轴磁场传感器,其包括：第一导电类型衬底；第一垂直霍尔传感器,其包括延伸至第一导电类型衬底内的第一个第二导电类型阱,以及沿延伸至第一个第二导电类型阱内的第一组第二导电类型端口；第二垂直霍尔传感器,其包括延伸至第一导电类型衬底内的第二个第二导电类型阱,以及延伸至第二个第二导电类型阱内的第二组第二导电类型端口；平面霍尔传感器,其包括延伸至第一导电类型衬底内的第三个第二导电类型阱,以及延伸至第三个第二导电类型阱内的第三组第二导电类型端口。与现有技术相比,本发明不仅可以实现探测三轴磁场,而且制备工艺简单,零点不受强磁场干扰的影响。(The present invention provides a three-axis magnetic field sensor, comprising: a first conductive type substrate; a first vertical hall sensor including a first second conductivity type well extending into the first conductivity type substrate, and a first set of second conductivity type ports extending into the first second conductivity type well; a second vertical Hall sensor including a second conductivity type well extending into the first conductivity type substrate, and a second set of second conductivity type ports extending into the second conductivity type well; a planar hall sensor includes a third second conductivity type well extending into the first conductivity type substrate, and a third set of second conductivity type ports extending into the third second conductivity type well. Compared with the prior art, the invention not only can realize the detection of the three-axis magnetic field, but also has simple preparation process, and the zero point is not influenced by the interference of the strong magnetic field.)

1. A three-axis magnetic field sensor, comprising:

a first conductive type substrate;

a first vertical hall sensor comprising a first one of the second conductivity type wells extending down along an upper surface of the first conductivity type substrate into the first conductivity type substrate, and a first set of second conductivity type ports extending down along an upper surface of the first one of the second conductivity type wells into the first one of the second conductivity type wells;

a second vertical Hall sensor comprising a second conductivity type well extending down along an upper surface of the first conductivity type substrate into the first conductivity type substrate, and a second set of second conductivity type ports extending down along an upper surface of the second conductivity type well into the second conductivity type well;

a planar Hall sensor including a third second conductivity type well extending downwardly into the first conductivity type substrate along an upper surface of the first conductivity type substrate, and a third set of second conductivity type ports extending downwardly into the third second conductivity type well along an upper surface of the third second conductivity type well.

2. The three-axis magnetic field sensor of claim 1,

the first vertical Hall sensor is used for detecting an x-axis magnetic field;

the second vertical Hall sensor is used for detecting a y-axis magnetic field;

the planar hall sensor is used for detecting a z-axis magnetic field,

the x axis, the y axis and the z axis belong to a Cartesian coordinate system, and the z axis, the x axis and the y axis meet the right-hand rule.

3. The three-axis magnetic field sensor of claim 1,

the first conductive type substrate is a p-type substrate;

the second conductive type well is an n-well;

the second conductivity type port is an n + port.

4. The three-axis magnetic field sensor of claim 1,

the first conductive type substrate is an n-type substrate;

the second conductive type well is a p-well;

the second conductivity type port is a p + port.

5. The three-axis magnetic field sensor of claim 1,

the second conductive type well is formed by diffusion or implantation into the first conductive type substrate;

the second conductive-type port is formed by diffusion or implantation into the second conductive-type well.

6. The three-axis magnetic field sensor of claim 2,

the first set of second conductivity type ports includes a first power terminal 106a, a first ground terminal 106b, a second ground terminal 106c, a first signal positive terminal 106d and a first signal negative terminal 106 e;

the second set of second conductivity type ports includes a second power terminal 108a, a third ground terminal 108b, a fourth ground terminal 108c, a third signal plus terminal 108d and a fourth signal minus terminal 108 e;

the third set of second conductive type ports includes a third power terminal 110a, a fifth ground terminal 110b, a fifth signal plus terminal 110c and a sixth signal minus terminal 110 d.

7. The tri-axial magnetic field sensor of claim 6,

each port of the first set of ports of the second conductivity type forms a straight line along a y-axis;

each port of the second set of ports of the second conductivity type forms a straight line along the x-axis;

in the third set of the second conductive type ports, a straight line formed by the third power terminal 110a and the fifth ground terminal 110b is perpendicular to a straight line formed by the fifth signal plus terminal 110c and the sixth signal minus terminal 110 d.

8. The tri-axial magnetic field sensor of claim 7,

of the third set of ports of the second conductivity type,

the third power terminal 110a and the fifth ground terminal 110b form a straight line along the x-axis;

the fifth and sixth signal plus terminals 110c and 110d form a straight line along the y-axis.

9. The three-axis magnetic field sensor of claim 1,

the first vertical Hall sensor and the second vertical Hall sensor are respectively positioned at two adjacent sides of the plane Hall sensor.

10. The three-axis magnetic field sensor of claim 1,

the doping concentration of the second conduction type port is higher than that of the second conduction type trap.

[ technical field ] A method for producing a semiconductor device

The invention relates to the technical field of three-axis magnetic field sensors, in particular to a three-axis magnetic field sensor based on a planar Hall effect and a vertical Hall effect.

[ background of the invention ]

The conventional three-axis hall magnetic field sensor is based on the planar hall effect and the soft magnet, and has two main disadvantages: the preparation process is complex; due to the existence of the soft magnet, the zero point drifts after the three-axis Hall magnetic field sensor is interfered by a strong magnetic field.

Therefore, it is necessary to provide a technical solution to overcome the above problems.

[ summary of the invention ]

One of the objectives of the present invention is to provide a three-axis magnetic field sensor, which not only can detect a three-axis magnetic field, but also has a simple manufacturing process, and the zero point is not affected by the interference of a strong magnetic field.

According to one aspect of the present invention, there is provided a three-axis magnetic field sensor comprising: a first conductive type substrate; a first vertical hall sensor comprising a first one of the second conductivity type wells extending down along an upper surface of the first conductivity type substrate into the first conductivity type substrate, and a first set of second conductivity type ports extending down along an upper surface of the first one of the second conductivity type wells into the first one of the second conductivity type wells; a second vertical Hall sensor comprising a second conductivity type well extending down along an upper surface of the first conductivity type substrate into the first conductivity type substrate, and a second set of second conductivity type ports extending down along an upper surface of the second conductivity type well into the second conductivity type well; a planar Hall sensor including a third second conductivity type well extending downwardly into the first conductivity type substrate along an upper surface of the first conductivity type substrate, and a third set of second conductivity type ports extending downwardly into the third second conductivity type well along an upper surface of the third second conductivity type well.

Further, the first vertical hall sensor is used for detecting an x-axis magnetic field; the second vertical Hall sensor is used for detecting a y-axis magnetic field; the planar Hall sensor is used for detecting a z-axis magnetic field, wherein an x axis, a y axis and a z axis belong to a Cartesian coordinate system, and the z axis, the x axis and the y axis meet the right-hand rule.

Further, the first conductive type substrate is a p-type substrate; the second conductive type well is an n-well; the second conductivity type port is an n + port.

Further, the first conductive type substrate is an n-type substrate; the second conductive type well is a p-well; the second conductivity type port is a p + port.

Further, the second conductive type well is formed by diffusion or implantation into the first conductive type substrate; the second conductive-type port is formed by diffusion or implantation into the second conductive-type well.

Further, the first set of second conductivity type ports includes a first power terminal, a first ground terminal, a second ground terminal, a first signal positive terminal and a first signal negative terminal; the second set of second conductivity type ports comprises a second power terminal, a third ground terminal, a fourth ground terminal, a third signal positive terminal and a fourth signal negative terminal; the third set of second conductivity type ports includes a third power terminal, a fifth ground terminal, a fifth signal positive terminal, and a sixth signal negative terminal.

Further, each port of the first set of ports of the second conductivity type forms a straight line along the y-axis; each port of the second set of ports of the second conductivity type forms a straight line along the x-axis; in the third set of second conductivity type ports, a straight line formed by the third power terminal and the fifth ground terminal is perpendicular to a straight line formed by the fifth signal plus terminal and the sixth signal minus terminal.

Further, in the third group of ports of the second conductivity type, the third power end and the fifth ground end form a straight line along the x-axis; the fifth signal positive terminal and the sixth signal negative terminal form a line along the y-axis.

Furthermore, the first vertical hall sensor and the second vertical hall sensor are respectively positioned at two adjacent sides of the planar hall sensor.

Furthermore, the doping concentration of the second conductive type port is higher than that of the second conductive type well.

Compared with the prior art, the three-axis magnetic field sensor comprises the first vertical Hall sensor, the second vertical Hall sensor and the plane Hall sensor which are integrated on the same substrate, the three-axis magnetic field can be detected, the preparation process is simple, and the zero point is not influenced by the interference of a strong magnetic field.

[ description of the drawings ]

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise. Wherein:

FIG. 1 is a schematic diagram of a three-axis magnetic field sensor based on planar Hall and vertical Hall effects according to an embodiment of the present invention;

FIG. 2 is a schematic cross-sectional view along section line A-A of the three-axis magnetic field sensor shown in FIG. 1;

FIG. 3 is a schematic cross-sectional view along section line B-B of the three-axis magnetic field sensor shown in FIG. 1;

fig. 4 is a schematic cross-sectional view along the C-C section line of the three-axis magnetic field sensor shown in fig. 1.

[ detailed description ] embodiments

In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.

Reference herein to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic may be included in at least one implementation of the invention. The appearances of the phrase "in one embodiment" in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Unless otherwise specified, the terms connected, and connected as used herein mean electrically connected, directly or indirectly.

Fig. 1 is a schematic structural diagram of a three-axis magnetic field sensor based on planar hall and vertical hall effect according to an embodiment of the present invention. The three-axis magnetic field sensor 100 shown in fig. 1 comprises a p-type substrate 101, and a first vertical hall sensor 102, a second vertical hall sensor 103 and a planar hall sensor 104 integrated on the same p-type substrate 101. The first vertical hall sensor 102 and the second vertical hall sensor 103 are respectively located at two adjacent sides of the planar hall sensor 104.

For convenience of description later, a cartesian coordinate system is defined in fig. 1, an x-axis is perpendicular to the longitudinal direction of the first vertical hall sensor 102 along the upper surface of the p-type substrate 101, a y-axis is parallel to the longitudinal direction of the first vertical hall sensor 102 along the upper surface of the p-type substrate 101, and a z-axis satisfies a right-hand rule with the x-axis and the y-axis.

Fig. 2 is a schematic cross-sectional view of the three-axis magnetic field sensor shown in fig. 1 along the line a-a.

As can be seen from fig. 1 and 2, the first vertical hall sensor 102 includes a first n-well 105 extending down into the p-type substrate 101 along an upper surface of the p-type substrate 101, and 5 n + ports (which may be referred to as a first set of n + ports) 106 extending down into the first n-well 105 along an upper surface of the first n-well 105. Wherein the first n-well 105 is formed by diffusion or implantation into the p-type substrate 101; the 5 n + ports 106 are formed by diffusion or implantation into the first n-well 105; the 5 n + ports 106 include a first power terminal 106a, a first ground terminal 106b, a second ground terminal 106c, a first signal positive terminal 106d, and a first signal negative terminal 106 e; the 5 n + ports 106 form a line along the y-axis. The first power terminal 106a is located at the middle, and the first signal positive terminal 106d and the first signal negative terminal 106e are respectively located at two sides of the first power terminal 106 a; the first and second ground terminals 106b and 106c are respectively located outside the first signal plus terminal 106d and the first signal minus terminal 106 e.

Please refer to fig. 3, which is a cross-sectional view along the B-B section line of the three-axis magnetic field sensor shown in fig. 1.

As can be seen from fig. 1 and 3, the second vertical hall sensor 103 includes a second n-well 107 extending down into the p-type substrate 101 along the upper surface of the p-type substrate 101, and 5 n + ports (which may be referred to as a second set of n + ports) 108 extending down into the second n-well 107 along the upper surface of the second n-well 107. Wherein the second n-well 107 is formed by diffusion or implantation into the p-type substrate 101; the 5 n + ports 108 are formed by diffusion or implantation into the second n-well 107; the 5 n + ports 108 include a second power terminal 108a, a third ground terminal 108b, a fourth ground terminal 108c, a third signal plus terminal 108d and a fourth signal minus terminal 108 e; the 5 n + ports 108 form a straight line along the x-axis. The second power end 108a is located at the middle, and the third signal positive end 108d and the fourth signal negative end 108e are respectively located at two sides of the second power end 108 a; the third ground terminal 108b and the fourth ground terminal 108c are respectively located outside the third signal plus terminal 108d and the fourth signal minus terminal 108 e.

Please refer to fig. 4, which is a cross-sectional view along the C-C section line of the three-axis magnetic field sensor shown in fig. 1.

As can be seen from fig. 1 and 4, the planar hall sensor 104 includes a third n-well 109 extending down into the p-type substrate 101 along the upper surface of the p-type substrate 101, and 4 n + ports (which may be referred to as a third set of n + ports) 110 extending down into the third n-well 109 along the upper surface of the third n-well 109. Wherein the third n-well 109 is formed by diffusion or implantation into the p-type substrate 101; the 4 n + ports 110 are formed by diffusion or implantation into the third n-well 109; the 4 n + ports 110 include a third power terminal 110a, a fifth ground terminal 110b, a fifth signal positive terminal 110c, and a sixth signal negative terminal 110d, wherein a straight line formed by the third power terminal 110a and the fifth ground terminal 110b is perpendicular to a straight line formed by the fifth signal positive terminal 110c and the sixth signal negative terminal 110 d. In the embodiment shown in fig. 1, the third power terminal 110a and the fifth ground terminal 110b form a straight line along the x-axis; the fifth and sixth signal plus terminals 110c and 110d form a straight line along the y-axis.

The first vertical hall sensor 102 is used for detecting an x-axis magnetic field H_xAnd a second vertical Hall sensor 103 for detecting the y-axis magnetic field H_yThe planar Hall sensor 104 is used for detecting a z-axis magnetic field H_zThereby realizing the purpose of detecting the three-axis magnetic field. Compared with the prior art, the three-axis magnetic field sensor 100 based on the planar Hall effect and the vertical Hall effect has a simple preparation process, and the zero point is not influenced by the interference of a strong magnetic field because the three-axis magnetic field sensor does not contain a soft magnet.

It should be specifically noted that in another embodiment, the p-type substrate 101 in fig. 1 can be replaced by an n-type substrate; replacing the n-wells 105, 107, 109 in fig. 1 with p-wells; the n + ports 106, 108, 110 in fig. 1 are replaced with p + ports.

That is, the three-axis magnetic field sensor 100 in the present invention includes a first conductivity type substrate 101; and a first vertical hall sensor 102, a second vertical hall sensor 103, and a planar hall sensor 104 integrated on the same first conductive type substrate 101.

The first vertical hall sensor 102 includes a first second conductivity type well 105 extending down into the first conductivity type substrate 101 along an upper surface of the first conductivity type substrate 101, and a first set of second conductivity type ports 106 extending down into the first second conductivity type well 105 along an upper surface of the first second conductivity type well 105.

The second vertical hall sensor 103 includes a second conductivity type well 107 extending down the upper surface of the first conductivity type substrate 101 into the first conductivity type substrate 101, and a second set of second conductivity type ports 108 extending down the upper surface of the second conductivity type well 107 into the second conductivity type well 107.

The planar hall sensor 104 includes a third second conductivity type well 109 extending down into the first conductivity type substrate 101 along an upper surface of the first conductivity type substrate 101, and a third set of second conductivity type ports 110 extending down into the third second conductivity type well 109 along an upper surface of the third second conductivity type well 109.

In the embodiment shown in fig. 1, the first conductive type substrate 101 is a p-type substrate; the second conductive type wells 105, 107, 109 are n-wells; the second conductivity type ports 106, 108, 110 are n + ports the first set of second conductivity type ports 106 includes 5 n + ports 106a, 106b, 106c, 106d, 106 e; the second set of second conductivity type ports 108 includes 5 n + ports 108a, 108b, 108c, 108d, 108 e; the third set of ports 110 of the second conductivity type includes 4 n + ports 110a, 110b, 110c, 110 d. The n + ports 106, 108, 110 have a higher n-type doping concentration than the n-type doping concentrations of the ports 105, 107, 109.

In another embodiment, the first conductive type substrate 101 is an n-type substrate; the second conductive type wells 105, 107, 109 are p-wells; the second conductivity type ports 106, 108, 110 are p + ports. The first set of second conductivity type ports 106 includes 5 p + ports 106a, 106b, 106c, 106d, 106 e; the second set of second conductivity type ports 108 includes 5 p + ports 108a, 108b, 108c, 108d, 108 e; the third set of ports 110 of the second conductivity type comprises 4 p + ports 110a, 110b, 110c, 110 d. The p-type doping concentration of the p + ports 106, 108 and 110 is higher than the n-type doping concentration of the p + ports 105, 107 and 109.

In summary, the three-axis magnetic field sensor 100 of the present invention includes a first vertical hall sensor 102, a second vertical hall sensor 103 and a planar hall sensor 104 integrated on the same substrate 101. The first vertical hall sensor 102 is used for detecting an x-axis magnetic field H_xAnd a second vertical Hall sensor 103 for detecting the y-axis magnetic field H_yThe planar Hall sensor 104 is used for detecting a z-axis magnetic field H_zThereby realizing the purpose of detecting the three-axis magnetic field. Compared with the prior art, the three-axis magnetic field sensor 100 based on the planar Hall effect and the vertical Hall effect has a simple preparation process, and the zero point is not influenced by the interference of a strong magnetic field because the three-axis magnetic field sensor does not contain a soft magnet.

In the present invention, the terms "connected", "connecting", and the like mean electrical connections, and direct or indirect electrical connections unless otherwise specified.

The above description is only a preferred embodiment of the present invention, and the scope of the present invention is not limited to the above embodiment, but equivalent modifications or changes made by those skilled in the art according to the present disclosure should be included in the scope of the present invention as set forth in the appended claims.