阅读说明：本技术 激光结晶设备和制造显示设备的方法 (Laser crystallization apparatus and method of manufacturing display apparatus ) 是由 李东成 李童敏 徐宗吾 苏炳洙 于 2019-12-03 设计创作，主要内容包括：本公开涉及一种激光结晶设备和制造显示设备的方法。一种激光结晶设备可以包括激光光源、光学系统和光学模块。所述激光光源可以产生激光束。所述光学系统可以将所述激光束转换为线激光束。所述光学模块可以在第一方向上分散所述线激光束的能量,以产生分散的线激光束。所述第一方向可以垂直于所述光学模块的长度方向。(The present disclosure relates to a laser crystallization apparatus and a method of manufacturing a display apparatus. A laser crystallization apparatus may include a laser light source, an optical system, and an optical module. The laser light source may generate a laser beam. The optical system may convert the laser beam into a line laser beam. The optical module may disperse energy of the line laser beam in a first direction to generate a dispersed line laser beam. The first direction may be perpendicular to a length direction of the optical module.)

1. A laser crystallization apparatus, wherein the laser crystallization apparatus comprises:

a laser light source configured to generate a laser beam;

an optical system for converting the laser beam into a line laser beam; and

an optical module configured to disperse energy of the line laser beam in a first direction to generate a dispersed line laser beam, wherein the first direction is perpendicular to a length direction of the optical module.

2. The laser crystallization apparatus of claim 1, wherein the optical module comprises an input face for receiving the line laser beam and an output face for outputting the dispersed line laser beam, and wherein the input face is tilted with respect to the output face.

3. The laser crystallization apparatus of claim 2, wherein the angle between the input face and the output face is in the range of 5 degrees to 45 degrees.

4. The laser crystallization apparatus of claim 1, wherein the optical module is a concave lens having a concave input surface for receiving the line laser beam.

5. The laser crystallization apparatus according to claim 1, wherein the energy density of the first 20% in the first direction of the dispersed line laser beam is 150mJ/cm²Or smaller.

6. The laser crystallization apparatus of claim 5, wherein the laser crystallization apparatus further comprises a mechanism for moving a substrate relative to the optical module in the first direction, and wherein the plurality of instances of the dispersed line laser beam are projected onto the substrate a plurality of times.

7. The laser crystallization apparatus according to claim 1, wherein the optical system comprises:

a homogenizer for redistributing energy of the laser beam to produce a redistributed laser beam; and

a lens for converting the redistributed laser beam into the line laser beam.

8. The laser crystallization apparatus of claim 1, wherein the substrate to be processed by the laser crystallization apparatus includes a base substrate for supporting an amorphous silicon layer, wherein the optical module overlaps the base substrate.

9. The laser crystallization apparatus of claim 8, wherein the optical module is configured to project the dispersed line laser beam onto the amorphous silicon layer for changing the amorphous silicon layer into a polycrystalline silicon layer, and wherein a hydrogen concentration of the amorphous silicon layer is 2 at% or more.

10. The laser crystallization apparatus according to claim 9, wherein the polysilicon layer has a hydrogen concentration of 2 at% or less.

11. A method of manufacturing a display device, wherein the method comprises:

forming an amorphous silicon layer on a base substrate;

moving the base substrate in a first direction after projecting the first instance of the dispersed line laser beam onto the amorphous silicon layer and before projecting the second instance of the dispersed line laser beam onto the amorphous silicon layer;

forming a polycrystalline silicon layer by projecting the instances of the dispersed line laser beam onto the amorphous silicon layer to crystallize the amorphous silicon layer;

forming a semiconductor member by patterning the polysilicon layer; and

an insulating layer is formed on the semiconductor member,

wherein the energy density of the first 20% of the dispersed line laser beam in the first direction is 150mJ/cm²Or smaller.

12. The method of claim 11, wherein the method further comprises: providing the dispersed line laser beam using a laser crystallization apparatus, wherein the laser crystallization apparatus comprises:

a laser light source configured to generate a laser beam;

an optical system for converting the laser beam into a line laser beam; and

an optical module configured to disperse energy of the line laser beam in the first direction to generate the line laser beam, wherein the first direction is perpendicular to a length direction of the optical module.

13. The method of claim 11, wherein the amorphous silicon layer is formed by a chemical vapor deposition process.

14. The method of claim 13, wherein no thermal treatment is performed on the amorphous silicon layer prior to projecting any instances of the dispersed line laser beam onto the amorphous silicon layer.

15. The method of claim 11, wherein a hydrogen concentration in the amorphous silicon layer is 2 at% or greater immediately before the dispersed line laser beam is projected onto the amorphous silicon layer.

16. The method of claim 15, wherein a concentration of hydrogen in the polysilicon layer immediately after forming the polysilicon layer is 2 at% or less.

17. The method of claim 11, wherein the base substrate comprises a transparent polyimide layer.

18. The method of claim 17, wherein each process in the method is performed below 350 degrees celsius.

19. The method of claim 11, wherein the method further comprises:

forming a source electrode and a drain electrode on the insulating layer;

forming a first electrode on the source electrode and the drain electrode;

forming a light emitting layer on the first electrode; and

and forming a second electrode on the light emitting layer.

20. A laser crystallization apparatus, wherein the laser crystallization apparatus comprises:

a laser light source configured to generate a laser beam;

a lens group for converting the laser beam into a line laser beam; and

an optical module configured to change an energy profile of the line laser beam in a first direction, wherein the first direction is perpendicular to a length direction of the optical module.

Technical Field

Background

The display device may include a transistor for controlling light emission or light transmission of the display element. The transistor may include a polysilicon member as the semiconductor member. The characteristics of the polysilicon members can affect the performance of the transistors and, therefore, the display device.

Disclosure of Invention

One or more embodiments may relate to a laser crystallization apparatus configured to form a polycrystalline silicon layer having excellent quality. The polysilicon layer may be used in a display device.

One or more embodiments may relate to a method of manufacturing a display device using a laser crystallization device.

According to an embodiment, a laser crystallization apparatus includes: a laser light source configured to generate a laser beam; an optical system for converting the laser beam into a line laser beam having a short side in a first direction and a long side in a second direction perpendicular to the first direction; an optical module to which the line laser beam is irradiated, the optical module being disposed between a substrate disposed on a plane formed by the first direction and the second direction and the optical system, wherein the optical module disperses energy of the line laser beam in the first direction, is configured to increase a length of an energy profile (engergy profile) of the line laser beam in the first direction and to decrease a peak value of the energy profile.

In an embodiment, the optical module may be a lens having an upper surface inclined with respect to the plane.

In an embodiment, an angle between the upper surface of the lens and the plane may be 5 to 45 degrees.

In an embodiment, the optical module may be a lens having an upper surface that is a curved surface that is inclined with respect to the plane.

In an embodiment, the first 20% of the laser beam irradiated on the substrate in the first direction may have 150 (mJ/cm)²) Or less energy.

In an embodiment, the substrate may be moved in the first direction, and the laser beam may be irradiated to the substrate a plurality of times.

In an embodiment, the laser crystallization apparatus may further include: a homogenizer for homogenizing the distribution of the energy of the laser beam, the laser beam from the laser light source being incident to the homogenizer; and a lens for emitting the line laser beam, the laser beam passing through the homogenizer being incident to the lens.

In an embodiment, the substrate may include a base substrate and an amorphous silicon layer formed on the base substrate. The amorphous silicon layer may be crystallized as the laser beam is irradiated onto the substrate to form a polycrystalline silicon layer.

In an embodiment, the amorphous silicon layer may have a hydrogen concentration of 2 at% (atomic%) or more.

In an embodiment, the polysilicon layer may have a hydrogen concentration of 2 at% or less.

According to an embodiment, a method of manufacturing a display device includes: forming an amorphous silicon layer on a base substrate; forming a polycrystalline silicon layer by irradiating the amorphous silicon layer with a laser beam and crystallizing the amorphous silicon layer; forming an active pattern by patterning the polysilicon layer; and forming an insulating layer on the active pattern. The laser beam is a line laser beam, and the first 20% of the line laser beam on the short side has 150 (mJ/cm)²) Or less energy.

In an embodiment, the polycrystalline silicon layer may be formed by a laser crystallization apparatus. The laser crystallization apparatus may include: a laser light source configured to generate a laser beam; an optical system for converting the laser beam into a line laser beam having a short side in a first direction and a long side in a second direction perpendicular to the first direction; an optical module to which the line laser beam is irradiated, the optical module being disposed between a substrate disposed on a plane formed by the first direction and the second direction and the optical system, wherein the optical module disperses energy of the line laser beam in the first direction, is configured to increase a length of an energy curve of the line laser beam in the first direction, and to decrease a peak of the energy curve.

In an embodiment, the amorphous silicon layer may be formed by a chemical vapor deposition process.

In an embodiment, a heat treatment process may not be performed between the forming of the amorphous silicon layer and the forming of the polycrystalline silicon layer.

In an embodiment, the hydrogen concentration in the amorphous silicon layer may be 2 at% or more immediately before the polycrystalline silicon layer is formed.

In an embodiment, the hydrogen concentration in the polysilicon layer may be no greater than 2 at% immediately after the polysilicon layer is formed.

In an embodiment, the base substrate may include a transparent polyimide layer.

In an embodiment, each process in the method may be performed below 350 degrees celsius.

In an embodiment, the method may further comprise: forming a source electrode and a drain electrode on the insulating layer; forming a first electrode on the source electrode and the drain electrode; forming a light emitting layer on the first electrode; and forming a second electrode on the light emitting layer.

According to an embodiment, a laser crystallization apparatus includes: a laser light source configured to generate a laser beam; a lens to which the laser beam is incident, the lens being configured to emit a linear laser beam having a short side in a first direction and a long side in a second direction perpendicular to the first direction; and an optical module disposed between the lens and a substrate to which the line laser beam is irradiated to change an energy profile of the line laser beam in the first direction.

Drawings

Fig. 1 is a perspective view illustrating a laser crystallization apparatus providing a laser beam according to an embodiment.

Fig. 2 is a view for explaining characteristics of components and a laser beam of the laser crystallization apparatus according to the embodiment.

Fig. 3 is a graph showing an energy profile (energy profile) of a laser beam in a short side direction according to a comparative example and showing an energy profile of a laser beam in a short side direction according to an embodiment.

Fig. 4A is a diagram showing a cross section of an optical module and an energy profile of a laser beam in a short side direction according to an embodiment.

Fig. 4B is a diagram showing a cross section of the optical module and an energy profile of the laser beam in the short side direction according to the embodiment.

Fig. 4C is a diagram showing a cross section of the optical module and an energy profile of the laser beam in the short side direction according to the embodiment.

Fig. 4D is a graph showing an energy profile of a laser beam in a short side direction according to a comparative example.

Fig. 5A is a diagram showing a relationship between a laser energy profile and a crystallized polysilicon layer in a process using the laser crystallization apparatus according to the comparative example.

Fig. 5B is a plan view of the region a of fig. 5A where a defect has occurred.

Fig. 5C is a cross-sectional view of the region a of fig. 5A where a defect has occurred.

Fig. 6 is a diagram showing a relationship between a laser energy profile and a crystallized polycrystalline silicon layer in a process using a laser beam of the laser crystallization apparatus according to the embodiment.

Fig. 7 is a sectional view of a display device manufactured using a method according to an embodiment.

Fig. 8 is a flowchart illustrating a method of manufacturing a display device according to an embodiment.

Embodiments may relate to a laser crystallization apparatus. The laser crystallization apparatus may include a laser light source, an optical system, and an optical module. The laser light source may generate a laser beam. The optical system may convert the laser beam into a line laser beam. The optical module may disperse energy of the line laser beam in a first direction to generate a dispersed line laser beam. The first direction may be perpendicular to a length direction of the optical module.

The optical module can include an input face for receiving the line laser beam and can include an output face for outputting the dispersed line laser beam. The input face may be inclined relative to the output face.

The angle between the input face and the output face may be in the range of 5 degrees to 45 degrees.

The optical module may be a concave lens having a concave input surface for receiving the line laser beam.

The energy density of the first 20% of the dispersed line laser beam in the first direction may be 150mJ/cm²Or smaller.

The laser crystallization apparatus may include a mechanism for moving a substrate in the first direction with respect to the optical module. Multiple instances (instances) of the dispersed line laser beam may be transflected onto the substrate multiple times.

The optical system may comprise the following elements: a homogenizer for redistributing energy of the laser beam to produce a redistributed laser beam; and a lens for converting the redistributed laser beam into the line laser beam.

The substrate to be processed by the laser crystallization apparatus may include a base substrate for supporting an amorphous silicon layer. The optical module may overlap the base substrate.

The optical module may project the dispersed line laser beam onto the amorphous silicon layer to change the amorphous silicon layer into a polycrystalline silicon layer. The amorphous silicon layer may have a hydrogen concentration of 2 at% or more.

The polysilicon layer may have a hydrogen concentration of 2 at% or less.