阅读说明：本技术 一种高视频带宽的射频功率放大器 (Radio frequency power amplifier with high video bandwidth ) 是由 马强 张勇 于 2019-01-31 设计创作，主要内容包括：本发明公开了一种高视频带宽的射频功率放大器,包括：功率器件和散热板；所述功率器件包括载体法兰,所述载体法兰上贴装有晶体管和解耦电路模块,所述晶体管与解耦电路模块通过引线连接；所述功率器件焊接固定在散热板的上方；其中,所述解耦电路模块至少包括第一电容、第二电容和阻尼电阻,所述阻尼电阻连接第一电容和第二电容,所述第一电容、第二电容和阻尼电阻由多层共烧陶瓷材料堆叠制成,所述第一电容与阻尼电阻的电感形成视频LC谐振电路,所述第二电容串联阻尼电阻和引线形成的电感之后与电路中的串联等效电感L<Sub>s</Sub>组成超低频谐振电路。加工工艺简单,体积小,同时实现视频带宽的最大化。(The invention discloses a high-video-bandwidth radio frequency power amplifier which comprises a power device and a heat dissipation plate, wherein the power device comprises a carrier flange, a transistor and a decoupling circuit module are mounted on the carrier flange in an attached mode, the transistor and the decoupling circuit module are connected through leads, the power device is fixedly welded above the heat dissipation plate in a welded mode, the decoupling circuit module at least comprises a first capacitor, a second capacitor and a damping resistor, the damping resistor is connected with the first capacitor and the second capacitor, the first capacitor, the second capacitor and the damping resistor are made of multi-layer co-fired ceramic materials in a stacked mode, a video L C resonance circuit is formed by the inductance of the first capacitor and the damping resistor, the second capacitor is connected with the damping resistor in series and an equivalent inductance L in the circuit after the inductance is formed by the lead in series connection with the damping resistor in series connection s Forming an ultra-low frequency resonant circuit. The processing technology is simple, the size is small, and the maximization of video bandwidth is realized.)

1. A high video bandwidth radio frequency power amplifier, comprising: power devices and heat dissipation plates;

the power device comprises a carrier flange, a transistor and a decoupling circuit module are attached to the carrier flange, and the transistor is connected with the decoupling circuit module through a lead;

the power device is welded and fixed above the heat dissipation plate;

the decoupling circuit module at least comprises a first capacitor, a second capacitor and a damping resistor, wherein the damping resistor is connected with the first capacitor and the second capacitor, the first capacitor, the second capacitor and the damping resistor are made of multi-layer co-fired ceramic materials in a stacked mode, the first capacitor and an inductor of the damping resistor form a video L C resonance circuit, and the second capacitor is connected in series with the damping resistor and an inductor formed by leads and then connected in series with an equivalent inductor L in the circuit_sForming an ultra-low frequency resonant circuit.

2. The high video bandwidth radio frequency power amplifier of claim 1, wherein the capacitance of said first capacitor is greater than 100 pF.

3. The high video bandwidth radio frequency power amplifier of claim 1, wherein the capacitance value of said second capacitor is greater than 10 nF.

4. The high video bandwidth radio frequency power amplifier of claim 1, wherein the damping resistance is between 0.1 ohms and 5 ohms.

5. The high video bandwidth rf power amplifier of claim 1, further comprising a protective cover covering the power device, the protective cover being fixed to the heat sink and forming a closed cavity with the heat sink.

Technical Field

The invention relates to the technical field of wireless communication, in particular to a radio frequency power amplifier with high video bandwidth.

Background

The power amplifier, which is one of the important core modules of the radio frequency front end in the wireless communication system, has a crucial impact on the overall performance of the communication system. Advanced wireless communication systems require increasingly higher data speeds and bandwidths. The signal bandwidth may limit the RF power device from amplifying without limit. Signal bandwidth and video bandwidth (low frequency) are important to meet the linearity requirements of wireless communication systems. The video bandwidth is a main factor limiting the improvement of the digital predistortion system.

At present, in order to improve the video bandwidth of the RF power device, as shown in fig. 1, electronic components may be disposed in the internal structure of the power device to form a decoupling L C circuit between the electronic components inside the power device, and an equivalent circuit diagram is shown in fig. 2. however, in the existing mainstream high-power RF power amplifier, the power device generally adopts a ceramic package structure, the internal space of the ceramic package structure is limited and cannot be expanded outwards, so that the space and the size of the L C circuit (large capacitor and small inductor) are restricted, the thickness of the second capacitor 5' is often very thick, so that a groove needs to be formed on a carrier flange, the processing process is complicated, and the cost is high_v，L_vWith matching shunt inductance L in the circuit_d+L_sTogether forming an equivalent inductance due to (L)_d+L_s)>>L_vTherefore, the equivalent inductance is approximately equal to L_vThus video bandwidthTherefore, the existing power device structure is difficult to realize the maximization of video bandwidth.

Disclosure of Invention

In view of the above technical problems, an object of the present invention is to provide a radio frequency power amplifier with high video bandwidth, which has a simple processing technology and simultaneously maximizes the video bandwidth.

In order to solve the problems in the prior art, the technical scheme provided by the invention is as follows:

a high video bandwidth radio frequency power amplifier, comprising: power devices and heat dissipation plates;

the power device comprises a carrier flange, a transistor and a decoupling circuit module are attached to the carrier flange, and the transistor is connected with the decoupling circuit module through a lead;

the power device is welded and fixed above the heat dissipation plate;

the decoupling circuit module at least comprises a first capacitor, a second capacitor and a damping resistor, wherein the damping resistor is connected with the first capacitor and the second capacitor, the first capacitor, the second capacitor and the damping resistor are made of multi-layer co-fired ceramic materials in a stacked mode, the first capacitor and an inductor of the damping resistor form a video L C resonance circuit, and the second capacitor is connected in series with the damping resistor and an inductor formed by leads and then connected in series with an equivalent inductor L in the circuit_sForming an ultra-low frequency resonant circuit.

In a preferred embodiment, the capacitance of the first capacitor is greater than 100 pF.

In a preferred embodiment, the capacitance value of the second capacitor is greater than 10 nF.

In a preferred embodiment, the damping resistor is between 0.1 ohm and 5 ohm.

In a preferred technical scheme, the protective cover is further included, the protective cover covers the power device, and the protective cover is fixed on the heat dissipation plate and forms a closed cavity with the heat dissipation plate.

Compared with the scheme in the prior art, the invention has the advantages that:

in order to improve the video bandwidth of the power device, the added decoupling circuit module is formed by stacking a plurality of layers of co-fired ceramic materials, the decoupling circuit module comprises a first capacitor and a second capacitor connected through a damping resistor, the decoupling circuit module is arranged in the power device, and the power device and the decoupling circuit module can be simplified into an equivalent circuit shown in fig. 3, wherein the second capacitor forms a decoupling capacitor in an L C decoupling circuit, a connecting lead forms a decoupling inductor in a L C decoupling circuit, the damping resistor connected with the second capacitor in series is directly connected to the first capacitor circuit, and no wiring inductor L v in the prior art exists, so that the structure is favorable for realizing the maximization of the video bandwidth.

Meanwhile, the structure does not need to form a groove on the carrier flange, and the processing technology is simple and the cost is low.

Drawings

The invention is further described with reference to the following figures and examples:

fig. 1 is a top view of a prior art high video bandwidth rf power amplifier;

fig. 2 is an equivalent circuit diagram of a high video bandwidth rf power amplifier according to the prior art;

FIG. 3 is an equivalent circuit diagram of an embodiment of the present invention;

fig. 4 is a top view of a radio frequency power amplifier according to an embodiment of the present invention;

fig. 5 is a cross-sectional view of the radio frequency power amplifier shown in fig. 4 taken along a-a;

fig. 6 is a schematic structural diagram of a decoupling circuit module according to the present invention.

Reference numerals:

100': power device, 1': a die, 2': input/output pin, 3': first capacitance, 5': second capacitance, 6': a lead wire;

1: power device, 2: input-output pin, 3: heat dissipation plate, 5: protective cover, 10: decoupling circuit module, 11: carrier flange, 12: lead wire, 13: die, 14: first capacitance, 22: second capacitance, 15: and a damping resistor.

Detailed Description

The above-described scheme is further illustrated below with reference to specific examples. It should be understood that these examples are for illustrative purposes and are not intended to limit the scope of the present invention. The conditions used in the examples may be further adjusted according to the conditions of the particular manufacturer, and the conditions not specified are generally the conditions in routine experiments.

As shown in fig. 3, 4, 5 and 6, the radio frequency power amplifier includes:

a power device 1 and a heat sink 3; as shown in fig. 4, the power device 1 is soldered and fixed above the heat sink 3.

The power device 1 comprises a carrier flange 11, a transistor and decoupling circuit module 10 is attached to the carrier flange 11, the transistors are connected through a plurality of transistor dies 13, the transistors are connected with the decoupling circuit module 10 through leads 12, and the transistor and decoupling circuit module 10 can be welded on the carrier flange 11 through crystal face welding equipment. May be provided inside the power device 1.

As shown in fig. 6, the decoupling circuit module 10 includes a first capacitor 14, a second capacitor 22 and a damping resistor 15, the damping resistor 15 connects the first capacitor 14 and the second capacitor 22, the first capacitor 14, the second capacitor 22 and the damping resistor 15 are all made of a stack of multi-layer co-fired ceramic materials, preferably a package, the co-fired ceramic materials may include multi-layer high temperature co-fired ceramic materials and/or multi-layer low temperature co-fired ceramic materials, and the embodiment is that the upper multi-layer (2 layers shown in the figure) is a first capacitor C composed of materials with small dielectric constant_d14, a second capacitor C composed of a plurality of lower layers of materials having a relatively large dielectric constant_v22, of course, a ground plane is also included therein, and the damping resistor 15 may be disposed in the module, or may be disposed at the uppermost layer, etc.

A first capacitor C_dAnd 14 is a radio frequency DC blocking capacitor.

In this way, the circuit formed by the power device 1 and the decoupling circuit module 10 can be simplified into an equivalent circuit as shown in fig. 3, and the different frequencies can cause three resonant circuits to appear in the equivalent circuit.

In the first resonant circuit, the output parasitic capacitance of the transistor and the inductor L d formed by the lead 12 form a radio frequency resonant circuit.

A second resonant circuit of a second capacitor C_vSeries damping resistor R_dAnd an inductor L_dAnd then with a series equivalent inductance L in the circuit_sForming an ultra-low frequency resonant circuit having the formulaThe damping resistor can effectively damp the frequency in the ultra-low frequency range<50MHz) to smooth out variations in impedance, including amplitude and phase. The smoothed amplitude and phase have lower memory effects. Has important effect on improving the linearity of the power amplifier and the performance of a digital pre-true system。

The third resonant circuit is a first capacitor C_d14 and inductance L (R) of damping resistor_d) Forming a video L C resonant circuit, a first capacitor C_d14 is a video decoupling capacitor, which is formed by the formula of video bandwidthTherefore, the inductance of the damping resistor Rd is extremely small, so that the video bandwidth is expanded to a certain extent theoretically.

As a specific example, the first capacitance may be greater than 100 pF.

The second capacitance may be greater than 10 nF.

Additionally, the damping resistance may be between 0.1 ohm and 5 ohm.

In addition, in order to protect the electronic components inside the power device 1, as shown in fig. 5, a protective cover 5 may be further disposed outside the power device, and the protective cover 5 is fixed on the input/output pins 2 and forms a closed cavity with the input/output pins 2. The protective cover 5 covers all electronic components in the power device 1, and is used for protecting the power device 1 from impurities entering the power device 1.

The assembling mode is flexible and various, and the embodiment is explained by using a traditional packaging mode, such as ceramic, OMP, cavity plastic and the like, and can be also applied to a power device PCB assembling mode without a packaging structure.

It is to be understood that the above-described embodiments of the present invention are merely illustrative of or explaining the principles of the invention and are not to be construed as limiting the invention. Therefore, any modification, equivalent replacement, improvement and the like made without departing from the spirit and scope of the present invention should be included in the protection scope of the present invention. Further, it is intended that the appended claims cover all such variations and modifications as fall within the scope and boundaries of the appended claims or the equivalents of such scope and boundaries.