阅读说明：本技术 一种超薄的宽带超材料吸波器单元 (Ultra-thin broadband metamaterial wave absorber unit ) 是由 陈磊 于 2020-05-01 设计创作，主要内容包括：本发明公开了一种超薄的宽带超材料吸波器单元,包括依次设置的表层金属结构层、中间介质板层和底层金属地,表层金属结构层包括第一金属方环、第二金属方环和第一方形金属贴片,第一金属方环与第二金属方环的上下边框均存在开口,并通过电阻贴片相联接而形成闭环,第一方形金属贴片位于中央,整个表层金属结构层中心对称。本发明通过采用加载电阻贴片元件的金属方环结构,在相对宽的频率范围内实现了对电磁波的吸收,同时其结构简单,易于加工制造。(The invention discloses an ultrathin broadband metamaterial wave absorber unit which comprises a surface metal structure layer, a middle medium plate layer and a bottom metal ground, wherein the surface metal structure layer, the middle medium plate layer and the bottom metal ground are sequentially arranged, the surface metal structure layer comprises a first metal square ring, a second metal square ring and a first square metal patch, openings are formed in the upper frame and the lower frame of the first metal square ring and the upper frame and the lower frame of the second metal square ring, the openings are connected through a resistance patch to form a closed ring, the first square metal patch is located in the center, and the whole surface metal structure layer is centrosymmetric. The invention realizes the absorption of electromagnetic waves in a relatively wide frequency range by adopting the metal square ring structure loaded with the resistance patch element, and meanwhile, the structure is simple and is easy to process and manufacture.)

1. An ultra-thin broadband metamaterial wave absorber unit is characterized in that: the basic unit comprises a surface metal structure layer (1), a middle dielectric slab layer (3) and a bottom metal ground (4) which are sequentially arranged from top to bottom; the surface metal structure layer (1) comprises a first metal square ring (11), a second metal square ring (12) and a first square metal patch (13) which are attached to the upper surface of the upper medium plate layer (3), openings are formed in the upper frame and the lower frame of the first metal square ring, the upper frame and the lower frame of the first metal square ring are connected through a first resistor patch (21) and a fourth resistor patch (24) to form a closed loop, openings are formed in the upper frame and the lower frame of the second metal square ring, the upper frame and the lower frame of the second metal square ring are connected through a second resistor patch (22) and a third resistor patch (23) to form a closed loop, the first square metal patch (13) is located in the center, and the whole surface metal structure layer (.

2. The base unit of claim 1, wherein: the periodic side length p of the basic unit is 6.4-6.6 mm; the side length a1 of the outer frame of the first metal square ring (11) is 5.9-6.1mm, the side length a2 of the inner frame of the first metal square ring (11) is 4.7-4.9mm, the side length b1 of the outer frame of the second metal square ring (12) is 4.1-4.3mm, the side length a2 of the inner frame of the second metal square ring (12) is 2.7-2.9mm, the widths g of the openings of the upper frame and the lower frame of the first metal square ring (11) and the second metal square ring (12) are both 0.4-0.6mm, and the side length c of the first square metal patch (13) is 2.2-2.4 mm; the thickness h1 of the middle dielectric slab layer (3) is 1.42-1.62mm, the dielectric constant is 0.8-1.2, and the loss tangent is-0.003-0.003; the thickness h2 of the bottom layer metal ground (4) is 0.09-0.11 mm.

3. The base unit of claim 1, wherein: the periodic side length p of the basic unit is 6.5 mm; the side length a1 of the outer frame of the first metal square ring (11) is 6.0mm, the side length a2 of the inner frame of the first metal square ring (11) is 4.8mm, the side length b1 of the outer frame of the second metal square ring (12) is 4.2mm, the side length a2 of the inner frame of the second metal square ring (12) is 2.8mm, the widths g of the openings of the upper and lower frames of the first metal square ring (11) and the second metal square ring (12) are both 0.5mm, and the side length c of the first square metal patch (13) is 2.3 mm; the thickness h1 of the middle dielectric slab layer (3) is 1.52 mm; the thickness h2 of the bottom layer metal ground (4) is 0.1 mm.

4. The base unit of claim 1, wherein: the resistance values of the resistor patches (2) are respectively set to be 300 omega for the first resistor patch (21), 43 omega for the second resistor patch (22), 470 omega for the third resistor patch (23) and 600 omega for the fourth resistor patch (24).

Technical Field

The invention belongs to the technical field of novel artificial electromagnetic materials, and particularly relates to an ultrathin broadband metamaterial wave absorber unit in a microwave band.

Background

The metamaterial is a three-dimensional artificial composite material and has unique electromagnetic properties compared with natural materials. The metamaterial is formed by periodically or non-periodically arranging basic units with the structure size far smaller than the wavelength. Through reasonably designing and optimizing the structure of the metamaterial unit, any equivalent electromagnetic parameter can be obtained, and the regulation and control space of the electromagnetic wave is widened to a great extent. Due to their rich electromagnetic properties, metamaterials have attracted considerable attention from researchers, and may be used in a variety of applications, such as superlenses, electromagnetic black holes, and perfect absorbers. Besides being capable of working in a microwave frequency band, the metamaterial can also be applied to a terahertz wave band, an infrared wave band, an optical wave band and even an acoustic wave band.

A metamaterial wave absorber is an electromagnetic functional material capable of partially or completely converting incident electromagnetic wave energy into other energy forms. The cross section of the radar scattering can be reduced by absorbing electromagnetic waves, and military stealth and other applications can be realized. The wave absorbing capacity of the metamaterial mainly depends on the resonance characteristics of the metal structures, so that the metamaterial is usually narrowband absorption, and in order to widen the bandwidth of the metamaterial wave absorber, the problem can be solved by arranging a plurality of resonance structures or stacking a plurality of layers of metal structures. But the processing technology is difficult and is not beneficial to practical application.

The design of the absorber aims at achieving high absorption characteristics over a range of frequency bands and the thickness of its structure should be as small as possible.

Disclosure of Invention

In order to solve the problems in the prior art, the invention provides an ultrathin broadband metamaterial wave absorber unit which adopts a metal square ring structure loaded with a resistance patch element and realizes efficient absorption of electromagnetic waves within a frequency band range of 15.2GHz-36.8 GHz. Compared with a method of stacking multiple layers of metal, the method has the advantages of being ultrathin, simpler in structure and easy to process and manufacture.

In order to achieve the purpose, the invention adopts the following technical scheme:

an ultra-thin broadband metamaterial wave absorber unit is characterized in that: the basic unit comprises a surface metal structure layer, a middle dielectric plate layer and a bottom metal ground which are sequentially arranged from top to bottom; the surface metal structure layer comprises a first metal square ring, a second metal square ring and a first square metal patch, wherein the first metal square ring, the second metal square ring and the first square metal patch are attached to the upper surface of the upper dielectric sheet layer, openings are formed in the upper frame and the lower frame of the first metal square ring and are connected through a first resistor patch and a fourth resistor patch to form a closed loop, openings are formed in the upper frame and the lower frame of the second metal square ring and are connected through a second resistor patch and a third resistor patch to form a closed loop, the first square metal patch is located in the center, and the whole surface metal structure layer is centrosymmetric.

Further, the period side length p of the basic unit is 6.4-6.6 mm; the side length a1 of the outer frame of the first metal square ring is 5.9-6.1mm, the side length a2 of the inner frame of the first metal square ring is 4.7-4.9mm, the side length b1 of the outer frame of the second metal square ring is 4.1-4.3mm, the side length a2 of the inner frame of the second metal square ring is 2.7-2.9mm, the widths g of the openings of the upper frame and the lower frame of the first metal square ring and the second metal square ring are both 0.4-0.6mm, and the side length c of the first square metal patch is 2.2-2.4 mm; the thickness h1 of the middle dielectric slab layer is 1.42-1.62mm, the dielectric constant is 0.8-1.2, and the loss tangent is-0.003-0.003; the thickness h2 of the bottom layer metal ground is 0.09-0.11 mm.

Preferably, the periodic side length p of the basic unit is 6.5 mm; the side length a1 of the outer frame of the first metal square ring is 6.0mm, the side length a2 of the inner frame of the first metal square ring is 4.8mm, the side length b1 of the outer frame of the second metal square ring is 4.2mm, the side length a2 of the inner frame of the second metal square ring is 2.8mm, the widths g of the openings of the upper frame and the lower frame of the first metal square ring and the second metal square ring are both 0.5mm, and the side length c of the first square metal patch is 2.3 mm; the thickness h1 of the middle dielectric slab layer is 1.52 mm; the thickness h2 of the bottom layer metal ground is 0.1 mm.

Further, the resistance values of the resistor patches are respectively set to be 300 Ω of the first resistor patch, 43 Ω of the second resistor patch, 470 Ω of the third resistor patch, and 600 Ω of the fourth resistor patch.

Compared with the prior art, the invention has the following beneficial effects:

1. the invention adopts the metal structure of the loading resistance patch to ensure that the metamaterial realizes the broadband wave-absorbing characteristic.

2. The metamaterial wave absorber unit has certain bandwidth characteristics, and can achieve a wave absorbing function in a wide frequency band.

3. The invention has simple processing and convenient realization, and is easy to prepare and process in a microwave frequency band only by depending on simple metal patterns.

Drawings

FIG. 1 is a schematic front view of a basic unit according to the present invention;

FIG. 2 is a schematic cross-sectional view of a basic unit according to the present invention;

wherein: 1-a surface metal structure layer, 11-a first metal square ring, 12-a second metal square ring, 13-a first square metal patch, 2-a resistor patch, 21-a first resistor patch, 22-a second resistor patch, 23-a third resistor patch, 24-a fourth resistor patch, 3-an intermediate dielectric slab layer and 4-a bottom metal ground layer; p is the periodic side length of the basic unit, a1 is the side length of the outer frame of the first metal square ring, a2 is the side length of the inner frame of the first metal square ring, b1 is the side length of the outer frame of the second metal square ring, b2 is the side length of the inner frame of the second metal square ring, c is the side length of the first square metal patch, h1 is the thickness of the middle medium plate layer, and h2 is the thickness of the grounding metal at the bottom layer;

fig. 3 is a basic unit and a performance result in the present invention, fig. 3 (a) is a perspective view of the basic unit in the present invention, and fig. 3 (b) is a simulation result of the reflection amplitude of the basic unit.

Detailed Description

The present invention will be further described with reference to the following examples.

As shown in fig. 1-2, an ultra-thin broadband metamaterial wave absorber unit is characterized in that: the basic unit comprises a surface metal structure layer 1, a middle dielectric plate layer 3 and a bottom metal ground 4 which are sequentially arranged from top to bottom; the surface metal structure layer 1 comprises a first metal square ring 11, a second metal square ring 12 and a first square metal patch 13, wherein the first metal square ring 11, the second metal square ring 12 and the first square metal patch 13 are attached to the upper surface of the upper dielectric sheet layer 3, openings are formed in the upper frame and the lower frame of the first metal square ring 11 and are connected through a first resistor patch 21 and a fourth resistor patch 24 to form a closed loop, openings are formed in the upper frame and the lower frame of the second metal square ring 12 and are connected through a second resistor patch 22 and a third resistor patch 23 to form a closed loop, the first square metal patch 13 is located in the center, and the whole surface metal structure layer 1 is centrosymmetric.

The periodic side length p of the basic unit is 6.4-6.6 mm; the side length a1 of the outer frame of the first metal square ring 11 is 5.9-6.1mm, the side length a2 of the inner frame of the first metal square ring 11 is 4.7-4.9mm, the side length b1 of the outer frame of the second metal square ring 12 is 4.1-4.3mm, the side length a2 of the inner frame of the second metal square ring 12 is 2.7-2.9mm, the widths g of the openings of the upper and lower frames of the first metal square ring 11 and the second metal square ring 12 are both 0.4-0.6mm, and the side length c of the first square metal patch 13 is 2.2-2.4 mm; the thickness h1 of the middle dielectric slab layer 3 is 1.42-1.62mm, the dielectric constant is 0.8-1.2, and the loss tangent is-0.003-0.003; the thickness h2 of the bottom layer metal ground 4 is 0.09-0.11 mm.

As a preferable scheme, the periodic side length p of the basic unit is 6.5 mm; the side length a1 of the outer frame of the first metal square ring 11 is 6.0mm, the side length a2 of the inner frame of the first metal square ring 11 is 4.8mm, the side length b1 of the outer frame of the second metal square ring 12 is 4.2mm, the side length a2 of the inner frame of the second metal square ring 12 is 2.8mm, the widths g of the openings of the upper and lower frames of the first metal square ring 11 and the second metal square ring 12 are both 0.5mm, and the side length c of the first square metal patch 13 is 2.3 mm; the thickness h1 of the middle dielectric slab layer 3 is 1.52 mm; the thickness h2 of the bottom layer metal ground 4 is 0.1 mm.

As a preferable scheme, the resistance values of the resistive patches 2 are set to 300 Ω of the first resistive patch 21, 43 Ω of the second resistive patch 22, 470 Ω of the third resistive patch 23, and 600 Ω of the fourth resistive patch 24, respectively.

In the invention, the resistance patch 2 is loaded to realize the widening of the absorption frequency band and ensure the strong absorption performance of the basic unit.

As shown in FIG. 3, according to simulation results of a single basic unit, under normal incidence of x-polarized electromagnetic waves, reflection amplitudes of the unit in a frequency range of 15.2GHz-36.8GHz are all less than-10 dB, which indicates that the metamaterial wave absorber unit can realize broadband efficient absorption.

The above description is only of the preferred embodiments of the present invention, and it should be noted that: it will be apparent to those skilled in the art that various modifications and adaptations can be made without departing from the principles of the invention and these are intended to be within the scope of the invention.