阅读说明：本技术 激光结晶装置 (Laser crystallization device ) 是由 申东勋 金志桓 朴京镐 孙明石 李洪鲁 崔京植 于 2019-11-11 设计创作，主要内容包括：根据本公开的激光结晶装置可包括光源部、第一光学部、第二光学部、阻断部、第三光学部以及工作台。所述光源部可射出第一激光束。所述第一光学部可改变所述第一激光束的路径及大小而将所述第一激光束转换为第二激光束。所述第二光学部可将所述第二激光束分割而转换为分割激光束。所述分割激光束包括中心激光束和包围所述中心激光束的外围激光束,所述阻断部可阻断所述中心激光束中的至少一部分。所述第三光学部可改变所述分割激光束中通过所述阻断部的激光束的路径而将所述激光束转换为第三激光束。所述工作台可与所述第三光学部相对布置。所述第一光学部可基于照射所述在工作台上的所述第三激光束,改变所述第一激光束的所述路径及大小。(The laser crystallization apparatus according to the present disclosure may include a light source portion, a first optical portion, a second optical portion, a blocking portion, a third optical portion, and a stage. The light source section may emit a first laser beam. The first optical part can change the path and the size of the first laser beam to convert the first laser beam into a second laser beam. The second optical portion may divide the second laser beam and convert the divided laser beam into divided laser beams. The divided laser beams include a central laser beam and a peripheral laser beam surrounding the central laser beam, and the blocking part may block at least a portion of the central laser beam. The third optical portion may change a path of the laser beam passing through the blocking portion among the divided laser beams to convert the laser beam into a third laser beam. The stage may be disposed opposite the third optic. The first optical portion may change the path and size of the first laser beam based on the third laser beam irradiated on the stage.)

1. A laser crystallization apparatus, comprising:

a light source unit: emitting a first laser beam;

a first optical unit that changes a path and a size of the first laser beam to convert the first laser beam into a second laser beam;

a second optical section that divides the second laser beam and converts the divided laser beam;

a blocking part including a central laser beam and a peripheral laser beam surrounding the central laser beam, the blocking part blocking at least a portion of the central laser beam;

a third optical part which changes a path of the laser beam passing through the blocking part among the divided laser beams to convert the laser beam into a third laser beam; and the number of the first and second groups,

a stage disposed opposite the third optic,

the first optical unit changes the path and size of the first laser beam based on the third laser beam irradiated on the stage.

2. The laser crystallization apparatus according to claim 1,

the blocking portion includes:

a base portion;

a reverse portion disposed over the base portion; and the number of the first and second groups,

and a beam stop part combined with the reversing part.

3. The laser crystallization apparatus according to claim 2,

the beam blocking portion is arrangeable by the reversing portion to a first state or a second state, the first state being a state in which the beam blocking portion blocks a part of the center laser beam, the second state being a state in which the beam blocking portion does not block the center laser beam.

4. The laser crystallization apparatus according to claim 3,

the peripheral laser beams include a first peripheral laser beam spaced apart in a first direction with the center laser beam interposed therebetween and a second peripheral laser beam spaced apart in a second direction crossing the first direction with the center laser beam interposed therebetween,

a first distance between the first peripheral laser beams spaced apart in the first direction is greater than a second distance between the second peripheral laser beams spaced apart in the second direction,

the beam blocking part also blocks the first peripheral laser beam.

5. The laser crystallization apparatus according to claim 2,

the peripheral laser beams include a first peripheral laser beam spaced apart in a first direction with the center laser beam interposed therebetween and a second peripheral laser beam spaced apart in a second direction crossing the first direction with the center laser beam interposed therebetween,

a first distance between the first peripheral laser beams spaced apart in the first direction is greater than a second distance between the second peripheral laser beams spaced apart in the second direction,

the beam blocking section also blocks the second peripheral laser beam.

6. The laser crystallization apparatus according to claim 1,

the blocking portion includes:

a base portion;

a first inversion portion disposed over the base portion;

a first beam stop part coupled to the first inversion part;

a second inversion portion disposed apart from the first inversion portion; and the number of the first and second groups,

and a second beam stop part coupled to the second inversion part.

7. The laser crystallization apparatus according to claim 6,

the first beam interruption portion is arrangeable by the first inversion portion into a first state or a second state, the first state being a state in which the first beam interruption portion interrupts a part of the center laser beam, the second state being a state in which the first beam interruption portion does not interrupt the center laser beam.

8. The laser crystallization apparatus according to claim 6,

the second beam interruption portion is arrangeable by the second inversion portion into a third state or a fourth state, the third state being a state in which the second beam interruption portion interrupts a part of the center laser beam, the fourth state being a state in which the second beam interruption portion does not interrupt the center laser beam.

9. The laser crystallization apparatus according to claim 1,

the stage includes a mounting region where a substrate is mounted and a peripheral region around the mounting region,

an aperture is defined in the mounting area for the third laser beam to be incident.

10. The laser crystallization apparatus according to claim 1,

the stage includes a mounting region where a substrate is mounted and a peripheral region around the mounting region,

an aperture for allowing the third laser beam to be incident is defined in the peripheral region.

Technical Field

The present disclosure relates to a laser crystallization apparatus with improved reliability.

Background

A thin film transistor is manufactured over a substrate and applied to an active matrix display device. A thin film transistor using a polycrystalline semiconductor film has a higher electron mobility and can operate at a higher speed than a thin film transistor using an amorphous semiconductor film. Therefore, a technique of forming a semiconductor film having a crystalline structure by crystallizing an amorphous semiconductor film formed over an insulating substrate such as glass has been studied.

As a method for crystallizing an amorphous semiconductor film, a thermal annealing method using furnace annealing, a rapid annealing method, a laser annealing method, or the like is being studied, and these methods may be used in combination. Among them, the laser annealing method has an advantage of being able to impart high energy only to the crystal region without excessively changing the temperature of the substrate.

Generally, as a laser beam used for laser annealing, a pulsed laser of an Excimer laser (Excimer laser) is used. As the laser use time increases, the oscillation efficiency of the pulse decreases to cause unevenness of the oscillation energy, possibly reducing uniformity of the beam shape.

Disclosure of Invention

An object of the present disclosure is to provide a laser crystallization apparatus with improved reliability.

The laser crystallization device according to an embodiment of the present disclosure may include a light source portion, a first optical portion, a second optical portion, a blocking portion, a third optical portion, and a stage. The light source section may emit a first laser beam. The first optical part can change the path and the size of the first laser beam to convert the first laser beam into a second laser beam. The second optical portion may divide the second laser beam and convert the divided laser beam into divided laser beams. The divided laser beams include a central laser beam and a peripheral laser beam surrounding the central laser beam, and the blocking part may block at least a portion of the central laser beam. The third optical portion may change a path of the laser beam passing through the blocking portion among the divided laser beams to convert the laser beam into a third laser beam. The stage may be disposed opposite the third optic. The first optical portion may change the path and size of the first laser beam based on the third laser beam irradiated on the stage.

The first optical portion may include a first long focal length lens and a second long focal length lens. The first long focal length lens may be disposed between the light source part and the second optical part. The second long focal length lens may be disposed between the first long focal length lens and the second optical portion.

The second optical portion may include a first lens array and a second lens array. The first lens array may be disposed between the first optical portion and the blocking portion and include a plurality of first lenses. The second lens array may be disposed between the first lens array and the blocking part, and include a plurality of second lenses.

The blocking portion may be disposed between the second optical portion and the third optical portion and disposed closer to the third optical portion than the second optical portion.

The blocking portion may include: a base portion; a reversing part: disposed over the base portion, and a beam blocking portion combined with the inversion portion.

It may be that the beam blocking portion is arrangeable by the inversion portion to a first state or a second state, the first state being a state in which the beam blocking portion blocks a part of the center laser beam, the second state being a state in which the beam blocking portion does not block the center laser beam.

It may be that the peripheral laser beams include first peripheral laser beams spaced apart in a first direction with the center laser beam interposed therebetween and second peripheral laser beams spaced apart in a second direction crossing the first direction with the center laser beam interposed therebetween, a first distance between the first peripheral laser beams spaced apart in the first direction is greater than a second distance between the second peripheral laser beams spaced apart in the second direction, and the beam blocking part further blocks the first peripheral laser beams.

It may be that the peripheral laser beams include first peripheral laser beams spaced apart in a first direction with the center laser beam interposed therebetween and second peripheral laser beams spaced apart in a second direction crossing the first direction with the center laser beam interposed therebetween, a first distance between the first peripheral laser beams spaced apart in the first direction is greater than a second distance between the second peripheral laser beams spaced apart in the second direction, and the beam blocking part further blocks the second peripheral laser beams.

The beam blocking portion is movable in a direction in which the base portion extends.

The blocking portion may include: a base portion; a first inversion portion disposed over the base portion; a first beam stop part coupled to the first inversion part; a second inversion portion disposed apart from the first inversion portion; and a second beam stop part coupled to the second inversion part.

The first beam interruption portion may be arrangeable by the first inversion portion to a first state or a second state, the first state being a state in which the first beam interruption portion interrupts a part of the central laser beam, the second state being a state in which the first beam interruption portion does not interrupt the central laser beam.

The second beam blocking portion may be arrangeable in a third state or a fourth state by the second reversing portion, the third state being a state in which the second beam blocking portion blocks a part of the center laser beam, and the fourth state being a state in which the second beam blocking portion does not block the center laser beam.

The third optical portion may include a first condenser lens disposed between the second optical portion and the stage and a second condenser lens disposed between the first condenser lens and the stage.

The stage may include a mounting region where the substrate is mounted and a peripheral region around the mounting region, and a hole through which the third laser beam is incident may be defined in the mounting region.

The stage may include a mounting region where a substrate is mounted and a peripheral region around the mounting region, in which a hole into which the third laser beam is incident is defined.

The measuring unit may be disposed opposite to the table.

The laser crystallization device according to an embodiment of the present disclosure may include a light source portion, a first optical portion, a second optical portion, a blocking portion, a third optical portion, a stage, and a measuring portion. The light source section may emit a first laser beam. The first optical part can change the path and the size of the first laser beam to convert the first laser beam into a second laser beam and comprises a first long-focus lens and a second long-focus lens. The second optical portion may divide the second laser beam and convert the divided laser beam into divided laser beams. The blocking portion may block at least a portion of the divided laser beam. The third optical portion may change a path of the laser beam passing through the blocking portion among the divided laser beams to convert the laser beam into a third laser beam. The stage may be disposed opposite the third optic. The measuring section may be disposed opposite to the table. The position of the first long focal length lens and the position of the second long focal length lens may be changed based on the third laser beam irradiated to the measurement section.

The blocking portion may include: a base portion; a reversing part: disposed over the base portion, and a beam blocking portion combined with the inversion portion.

It may be that the divided laser beams include a central laser beam and a peripheral laser beam surrounding the central laser beam, the beam blocking portion is arrangeable by the inverting portion to a first state or a second state, the first state being a state in which the beam blocking portion blocks a part of the central laser beam, the second state being a state in which the beam blocking portion does not block the central laser beam.

The stage may include a mounting region where the substrate is mounted and a peripheral region around the mounting region, and a hole through which the third laser beam is incident may be defined in the mounting region.

According to the present disclosure, the laser crystallization apparatus can measure the incident angle varying according to the uniformity of the laser beam emitted from the light source section by the measurement section. The first optical unit can change the path and size of the laser beam emitted based on the incident angle measured by the measuring unit. That is, the first optical portion can be adjusted to keep the incident angle uniform. Therefore, the laser crystallization apparatus can maintain the crystallization uniformity of the substrate to be constant. The present disclosure can provide a laser crystallization apparatus with improved reliability.

Drawings

Fig. 1 is a cross-sectional view of a laser crystallization apparatus according to an embodiment of the present disclosure.

Fig. 2 is a perspective view illustrating a portion of a laser crystallization apparatus according to an embodiment of the present disclosure.

Fig. 3 is a cross-sectional view illustrating a portion of a laser crystallization apparatus according to an embodiment of the present disclosure.

Fig. 4 is a flow chart illustrating the operation of a laser crystallization apparatus according to an embodiment of the present disclosure.

Fig. 5 is a plan view illustrating an operation state of a blocking part of a laser crystallization apparatus according to an embodiment of the present disclosure.

Fig. 6 is a plan view illustrating an operation state of a measurement section of a laser crystallization apparatus according to an embodiment of the present disclosure.

Fig. 7 is a plan view illustrating an operation state of a blocking part of a laser crystallization apparatus according to an embodiment of the present disclosure.

Fig. 8 is a plan view illustrating an operation state of a first optical portion of a laser crystallization apparatus according to an embodiment of the present disclosure.

Fig. 9 is a cross-sectional view of a display panel utilizing a substrate according to an embodiment of the present disclosure.

Fig. 10 is a plan view illustrating a blocking part of a laser crystallization apparatus according to an embodiment of the present disclosure.

Fig. 11 is a plan view illustrating a blocking part of a laser crystallization apparatus according to an embodiment of the present disclosure.

Fig. 12 is a plan view illustrating a blocking part of a laser crystallization apparatus according to an embodiment of the present disclosure.

Fig. 13 is a plan view illustrating a measurement section of a laser crystallization apparatus according to an embodiment of the present disclosure.

Description of the reference numerals

L M light source portion OT optical portion

L1 first optic L2 second optic

L3 third optical part BB blocking part

ST: a workbench CM: measuring part

Detailed Description

In the present specification, when a component (or a region, a layer, a portion, or the like) is referred to as being "on", "connected to" or "coupled to" another component, "it means that the component may be directly arranged, connected or coupled to the other component, or a third component may be arranged therebetween.

Like reference numerals refer to like constituent elements. In the drawings, the thickness, the ratio, and the size of constituent elements are enlarged for effectively explaining the technical contents.

"and/or" includes more than one combination as can be defined by the relevant constituent.

The terms first, second, etc. may be used to describe various elements, but the elements are not limited by the terms. The above terms are only used to distinguish one constituent element from other constituent elements. For example, a first constituent element may be named a second constituent element, and similarly, a second constituent element may also be named a first constituent element, without departing from the scope of the present disclosure. Except where otherwise expressly indicated herein, singular expressions include plural expressions.

In addition, terms such as "lower", "upper", and the like are used to explain the relationship of the respective components shown in the drawings. The above terms are relative concepts and are described with reference to the directions shown in the drawings.

Unless otherwise defined, all terms (including technical and scientific terms) used in this specification have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. In addition, terms that are the same as terms defined in commonly used dictionaries should be interpreted as having the same meaning as they are contextually equivalent in the relevant art, unless interpreted in an ideal or excessively formal sense, which is clearly defined herein.

It will be understood that terms such as "comprises" or "comprising," when used in this specification, specify the presence of stated features, integers, steps, acts, elements, components, or groups thereof, and are not intended to preclude the presence or addition of one or more other features, integers, steps, acts, elements, components, or groups thereof.

Hereinafter, embodiments of the present disclosure are described with reference to the drawings.

Fig. 1 is a sectional view of a laser crystallization apparatus according to an embodiment of the present disclosure, and fig. 2 is a perspective view illustrating a portion of the laser crystallization apparatus according to an embodiment of the present disclosure.

Referring to fig. 1 and 2, the laser crystallization apparatus L D may include a light source portion L M generating a first laser beam L S1, an optical portion OT optically converting the first laser beam L S1 into a second laser beam L S2 (refer to fig. 3) and a third laser beam L S3, a stage ST on which a substrate SUB is loaded, and a measurement portion CM.

The light source portion L M may be a device that generates oscillation of the raw first laser beam L S1 for example, the light source portion L M may include an oscillator (oscillator) the first laser beam L S1 may include an excimer (eximer) laser, a Yttrium Aluminum Garnet (YAG) laser, a glass laser, a Yttrium vanadate (YVO 4) laser, or an argon (Ar) laser.

The optical portion OT may be disposed in a direction in which the light source portion L M irradiates the first laser beam L S1 the optical portion OT may process the first laser beam L S1 into the third laser beam L S3 having a shape and energy density suitable for crystallization of the substrate SUB.

The third laser beam L S3 may be output in the shape of a rectangular quadrangle, to be able to be uniformly irradiated on the substrate SUB, a short side direction of the rectangular quadrangle may be defined as a short side, and a long side direction may be defined as a long side, the short side may extend in the first direction DR1, the long side may extend in the second direction DR2 crossing the first direction DR1, the third laser beam L S3 may be irradiated on the substrate SUB in the third direction DR3, the third laser beam L S3 may be irradiated on the substrate SUB, and a phase change of a thin film disposed over the substrate SUB may be directed, for example, the third laser beam L S3 may crystallize the first thin film SUB-1 formed on the substrate SUB to be changed into the second thin film SUB-2.

On the other hand, the directions indicated by the first direction DR1, the second direction DR2 and the third direction DR3 are relative concepts, and may be converted into other directions. Hereinafter, the first to third directions are directions to which the first direction DR1, the second direction DR2, and the third direction DR3 respectively refer and the same reference numerals are given. Further, in the present specification, a plane defined by the first direction DR1 and the second direction DR2 is defined as a plane, and "viewed on the plane" is defined as viewed in the third direction DR 3.

The third direction DR3 may be a direction crossing the first direction DR1 and the second direction DR 2. The first direction DR1, the second direction DR2 and the third direction DR3 may be orthogonal to each other.

The substrate SUB may include a glass substrate or a silicon substrate. However, this is merely exemplary, and the substrate SUB may include a variety of substrates. For example, the substrate SUB may comprise a silicon-germanium substrate. A first thin film SUB-1 and a second thin film SUB-2 may be disposed over the substrate SUB.

The first thin film SUB-1 may be a region which is not irradiated with the third laser beam L S3, the first thin film SUB-1 may be an amorphous silicon thin film, and the first thin film SUB-1 may be formed by a method such as a low-pressure Chemical Vapor Deposition method, an atmospheric-pressure Chemical Vapor Deposition method, a Plasma Enhanced Chemical Vapor Deposition method (PECVD), a sputtering method, or a vacuum evaporation method (vacuum evaporation).

The second thin film SUB-2 may be a region to which the third laser beam L S3 is irradiated, the second thin film SUB-2 may be a polysilicon thin film, the second thin film SUB-2 may be a thin film that melts and recrystallizes the first thin film SUB-1 by cooling after the third laser beam L S3 that crystallizes the first thin film SUB-1 is irradiated for several nanoseconds (nanosecond), the temperature of the first thin film SUB-1 is sharply increased, the polysilicon thin film may include polysilicon (Po-Si), the Field-Effect Mobility (Field-Effect Mobility) is hundreds of times higher than that of amorphous silicon, and high signal processing capability is also excellent at high frequencies, and thus, may be used for a display device such as an organic light emitting display device.

The stage ST may be mounted on the stage ST to move the substrate SUB with a certain directivity in an arrow direction, which may be a first direction DR1, so that the third laser beam L S3 may be uniformly irradiated on the first thin film SUB-1 on the substrate SUB.

The measuring section CM may be disposed opposite to the stage ST, may be disposed in a direction in which the third laser beam L S3 extends, may measure a length of a region irradiated with the third laser beam L S3, for example, may measure lengths of the short axis and the long axis of the third laser beam L S3.

Fig. 3 is a cross-sectional view illustrating a portion of a laser crystallization apparatus according to an embodiment of the present disclosure.

Referring to fig. 3, the laser crystallization apparatus L D may include a light source portion L M, an optical portion OT, a stage ST, and a measurement portion CM.

The light source unit L M may emit the first laser beam L S1. the first laser beam L S1 may have a gaussian distribution of energy density, for example, the first laser beam L S1 may have a central portion energy density higher than a peripheral portion energy density.

Optics OT may include first optic L1, second optic L2, blocking portion BB, and third optic L3.

First optical portion L1 may be disposed opposite light source portion L M first optical portion L1 may change the path and size of first laser beam L S1 to convert first laser beam L S1 to second laser beam L S2 first optical portion L1 may, for example, expand first laser beam L S1 in the minor axis direction or the major axis direction to increase magnification.

The first optical portion L1 may include a first long focal length lens T L1 and a second long focal length lens T L2.

The first long focal length lens T L1 may be disposed between the light source part L M and the second optical part L02, the first long focal length lens T L1 may disperse the first laser beam L S1, the first laser beam L S1 through the first long focal length lens T L1 may be dispersed to have various directivities, the first laser beam L S1 through the first long focal length lens T L1 may include a laser beam traveling in the same direction as the first laser beam L S1, the first long focal length lens T L1 may include a concave lens or a convex lens.

The second long focal length lens T L2 may be disposed between the first long focal length lens T L1 and the second optical portion L2 the second long focal length lens T L2 may convert the first laser beam L S1 passing through the first long focal length lens T L1 into a second laser beam L S2 having a certain directivity the second long focal length lens T L2 may include a concave lens or a convex lens.

The second optical portion L2 may be disposed opposite the first optical portion L1 the second optical portion L2 may split the second laser beam L S2 to convert to the split laser beam D L the second optical portion L2 may, for example, make the second laser beam L S2 uniform and make the beam energy density uniformly distributed.

The second optical portion L2 may include a first lens array H L1 and a second lens array H L2.

The first lens array H L1 may be disposed between the first optical portion L1 and the blocking portion BB, the first lens array H L01 may include a plurality of first lenses H L1 a, the plurality of first lenses H L1 a may be disposed along the first direction DR1 and the second direction DR2, respectively, for example, the plurality of first lenses H L1 a may be disposed along the short axis direction and the long axis direction, the plurality of first lenses H L1 a may include spherical lenses or aspherical lenses, respectively, the second laser beam L S2 incident to the first lens array H L1 may be refracted by the plurality of first lenses H L1 a, respectively, to be divided into sub-laser beams, which may be incident to the second lens array H L2.

The second lens array H L2 may be disposed between the first lens array H L1 and the blocking part BB, the second lens array H L02 may include a plurality of second lenses H L12 a, a plurality of second lenses H L22 a may be disposed along the first direction DR1 and the second direction DR2, respectively, for example, a plurality of second lenses H L32 a may be disposed along the minor axis direction and the major axis direction, a plurality of second lenses H L2 a may include spherical lenses or aspherical lenses, respectively, a number of the plurality of second lenses H L2 a may be the same as a number of the plurality of first lenses H L1 a, the sub laser beams incident to the second lens array H L2 are refracted by each of the plurality of second lenses H L2 a to be divided into divided laser beams D L, a divided laser beam D L may be incident to the third optical part L3.

Blocking portions BB may be disposed between the second optical portion L2 and the third optical portion L3, the blocking portions BB may be disposed closer to the third optical portion L3 than the second optical portion L2, the split laser beam D L may include a central laser beam and a peripheral laser beam surrounding the central laser beam, the blocking portions BB may block at least a part of the central laser beam, the blocking portions BB may not block at least a part of the light beam of the end portion of the short axis and the light beam of the end portion of the long axis of the split laser beam D L.

The third optical portion L3 may be disposed opposite the second optical portion L2 the third optical portion L3 may change the path of the split laser beam D L to convert the split laser beam D L into the third laser beam L S3, for example, the third optical portion L3 may change the path of the laser beam of the split laser beam D L that passes through the blocking portions BB to convert the laser beam into the third laser beam L S3.

The third optical portion L3 may include a first condenser lens C L1 and a second condenser lens C L2.

The first condenser lens C L1 may be disposed between the second optical portion L2 and the stage ST, the second condenser lens C L2 may be disposed between the first condenser lens C L1 and the stage ST, the first condenser lens C L1 and the second condenser lens C L2 may convert the divided laser beam D L diffused in the short axis direction and the long axis direction into the third laser beam L S3 having a uniform energy density in the short axis direction and the long axis direction.

The third laser beam L S3 may be irradiated on the substrate SUB (refer to fig. 1) the third laser beam L S3 may be irradiated on the substrate SUB (refer to fig. 1) at an incident angle AG.

The light source section L M reduces the oscillation efficiency of the pulse as the laser usage time increases, causing non-uniformity of the oscillation energy, and reducing the uniformity of the first laser beam L S1 the incident angle AG of the third laser beam L0S 3 may vary depending on the uniformity of the first laser beam L S1 emitted from the light source section L1M according to the embodiment of the present disclosure, the laser crystallization device L D may measure the incident angle AG through the measurement section CM, the first optical section L1 may vary the path and size of the first laser beam L S1 based on the incident angle AG, and therefore, the laser crystallization device L D may adjust the first optical section L1 to maintain the incident angle AG uniformly, and therefore, the laser crystallization device L D may maintain the uniformity of the crystal constant, and as a result, the laser crystallization device L D with improved reliability may be provided.

Fig. 4 is a flowchart illustrating an operation manner of a laser crystallization apparatus according to an embodiment of the present disclosure, and fig. 5 is a plan view illustrating an operation state of a blocking part of the laser crystallization apparatus according to an embodiment of the present disclosure.

Referring to fig. 3 to 5, the operation of the laser crystallization apparatus L D may include a step of maintaining the incident angle AG uniform between the first substrate crystallization step T1 and the second substrate crystallization step T7.

The light source portion L M may emit the first laser beam L S1 (T2). the blocking portion BB may be in the first state (T3). the blocking portion BB may block a part of the divided laser beam D L so that the incident angle ag may be easily measured.

The inversion portion F L may be disposed over the base portion BS, the beam blocking portion BK may be combined with the inversion portion F L, the beam blocking portion BK may be disposed in a first state by the inversion portion F L, the first state may be a state in which the beam blocking portion BK blocks a portion of a central laser beam included in the divided laser beam D L (refer to fig. 3) and peripheral laser beams surrounding the central laser beam, and the divided laser beam D L may be incident in the third direction DR 3.

The peripheral laser beams may include a first peripheral laser beam D L S-1 spaced apart along the first direction DR1 centering the center laser beam and a second peripheral laser beam D L S-2 spaced apart along the second direction DR2 centering the center laser beam, a first distance between the first peripheral laser beams D L S-1 may be greater than a second distance between the second peripheral laser beams D L S-2.

The blocking section BB can pass the first peripheral laser beam D L S-1 so that the incident angle AG formed on the major axis of the third laser beam L S3 can be easily measured.

The blocking portion BB can pass the second peripheral laser beam D L S-2 so that the incident angle AG formed on the short axis of the third laser beam L S3 (refer to fig. 3) can be easily measured.

Fig. 6 is a plan view illustrating an operation state of a measurement section of a laser crystallization apparatus according to an embodiment of the present disclosure.

Referring to fig. 4 and 6, the measurement unit CM can measure the incident angle AG-1 (T4).

The substrate SUB may be disposed above the stage ST, the stage ST may include a mounting area AN-1 where the substrate SUB is mounted and a peripheral area AN-2 around the mounting area AN-1, a hole HA1 where the third laser beam L S3 is incident may be defined at the mounting area AN-1, on a plane, the substrate SUB may overlap the hole HA1, the third laser beam L S3 may be incident at AN incident angle AG-1, the CM may be disposed under the stage ST, the CM measuring section may measure the third laser beam L S3, for example, the CM measuring section may measure a length a1 of a short axis or a long axis of a region where the third laser beam L S3 is incident, the CM measuring section may measure a length a2 from a point where the third laser beam L S3 crosses vertically downward to a position where the third laser beam L S3 is incident.

The measurement unit CM can supply the two measured lengths a1 and a2 to the control unit CU. The control unit CU can calculate the incident angle AG-1. The incident angle AG-1 can be represented by the following numerical formula 1.

[ mathematical formula 1]

AG-1＝sin^-1((A1/((A2²+A3²)^1/2))*(A3/((A1+A2)²+A3²)^1/2))

The control unit CU may calculate the incident angle AG-1 using the two lengths A1, A2, and A3 measured at the measuring unit CM. the length A3 may be a distance between a point where the third laser beam L S3 intersects and the measuring unit CM. the control unit CU may determine whether the calculated incident angle AG-1 of the major axis and the minor axis is the same as the incident angle of the major axis and the minor axis measured before the first substrate crystallization step T1 (T5).

According to the present disclosure, the laser crystallization apparatus L D (refer to fig. 3) may calculate the incident angle AG and maintain uniformity, and thus, the laser crystallization apparatus L D (refer to fig. 3) may maintain the uniformity of crystallization of the substrate SUB constant, and the present disclosure may provide the laser crystallization apparatus L D (refer to fig. 3) with improved reliability.

Fig. 7 is a plan view illustrating an operation state of a blocking part of a laser crystallization apparatus according to an embodiment of the present disclosure.

Referring to fig. 4 and 7, laser crystallization apparatus L D (refer to fig. 3) may arrange blocking portion BB in a second state (T6) when it is determined that measured incident angle AG-1 (refer to fig. 6) is the same as the incident angle measured before first substrate crystallization step T1 (T5). beam blocking portion BK may be arranged in the second state by inverting portion F L.

The laser crystallization apparatus L D may perform the second substrate crystallization step (T7) at the same incident angle AG-1 (refer to fig. 6) as the incident angle measured before the first substrate crystallization step T1.

According to the present disclosure, the laser crystallization apparatus L D (refer to fig. 3) may maintain the crystallization uniformity of the first and second substrates to be constant the present disclosure may provide a laser crystallization apparatus L D (refer to fig. 3) having improved reliability.

Fig. 8 is a plan view illustrating an operation state of a first optical portion of a laser crystallization apparatus according to an embodiment of the present disclosure.

Referring to fig. 4 and 8, in the laser crystallization apparatus L D (see fig. 3), when it is determined that the measured incident angle AG-1 (see fig. 6) is different from the incident angle measured before the first substrate crystallization step T1 (T5), the first optical unit L1 (T8) may be controlled, the control unit CU may be connected to the first optical unit L1 to control the first optical unit L1, and for example, the control unit CU may be connected to the first long-focus lens T L1 and the second long-focus lens T L2 to control the first long-focus lens T L1 and the second long-focus lens T L2, respectively.

The first long focal length lens T L1 is movable in the first direction DR1, the second direction DR2, and the third direction DR3, and the second long focal length lens T L2 is movable in the first direction DR1, the second direction DR2, and the third direction DR 3.

According to the present disclosure, the control unit CU may change the path and size of the first laser beam L S1 to control the first optical unit L to emit the second laser beam L S2, and the control unit CU may adjust the path and size of the first laser beam L S1 to maintain the incident angle AG-1 (see fig. 6) of the major axis and the minor axis to be the same as the incident angle AG-1 of the major axis and the minor axis measured before the first substrate crystallization step T1, and thus, the laser crystallization apparatus L D (see fig. 3) may maintain the uniformity of the crystallization of the substrate to be constant, and the present disclosure may provide a laser crystallization apparatus L D (see fig. 3) having improved reliability.

Fig. 9 is a cross-sectional view of a display panel utilizing a substrate according to an embodiment of the present disclosure.

Referring to fig. 9, the substrate SUB may be made of a glass material. However, the substrate SUB is not limited thereto, and may be formed of a plastic material.

The buffer film BF L forms a smooth surface above the substrate SUB, and can block permeation of impurity elements from the substrate SUB to the first thin film SUB-1 (refer to fig. 1). in an embodiment of the present disclosure, the buffer film BF L may be selectively disposed/omitted.

A first thin film SUB-1 (see fig. 1) which is an amorphous silicon layer may be disposed on the buffer film BF L. a laser crystallization apparatus L D (see fig. 3) may supply laser light to the first thin film SUB-1 (see fig. 1) disposed over the substrate SUB to form a second thin film SUB-2 (see fig. 1) which is a polycrystalline silicon layer. the second thin film SUB-2 (see fig. 1) may be used as a semiconductor layer.

In the present embodiment, the circuit element layer M L may include the buffer film BF L, the first intermediate inorganic film 10, and the second intermediate inorganic film 20 as inorganic films, and include the intermediate organic film 30 as an organic film, and the materials of the inorganic films and the organic films are not particularly limited.

A first semiconductor pattern OSP1 of the first transistor TR1, a second semiconductor pattern OSP2 of the second transistor TR2 may be disposed on the buffer film BF L the first semiconductor pattern OSP1 and the second semiconductor pattern OSP2 may be polysilicon.

A first intermediate inorganic film 10 may be disposed on the first and second semiconductor patterns OSP1 and OSP 2. A first control electrode GE1 of the first transistor TR1 and a second control electrode GE2 of the second transistor TR2 may be disposed on the first intermediate inorganic film 10.

A second intermediate inorganic film 20 covering the first and second control electrodes GE1 and GE2 may be disposed on the first intermediate inorganic film 10. A first input electrode DE1 and a first output electrode SE1 of the first transistor TR1, a second input electrode DE2 and a second output electrode SE2 of the second transistor TR2 may be disposed on the second intermediate inorganic film 20.

The first input electrode DE1 and the first output electrode SE1 may be connected to the first semiconductor pattern OSP1 through a first through hole CH1 and a second through hole CH2 penetrating the first intermediate inorganic film 10 and the second intermediate inorganic film 20, respectively. The second input electrode DE2 and the second output electrode SE2 may be connected to the second semiconductor pattern OSP2 through a third through hole CH3 and a fourth through hole CH4 penetrating the first intermediate inorganic film 10 and the second intermediate inorganic film 20, respectively. On the other hand, in another embodiment of the present disclosure, a part of the first transistor TR1 and the second transistor TR2 may be implemented by being deformed into a bottom gate structure.

An intermediate organic film 30 covering the first input electrode DE1, the second input electrode DE2, the first output electrode SE1, and the second output electrode SE2 may be disposed on the second intermediate inorganic film 20. The intermediate organic film 30 may provide a flat surface.

A display element layer IM L may be disposed on the intermediate organic film 30, a display element layer IM L may include a pixel defining film PD L and an organic light emitting diode O L ED. the pixel defining film PD L may include an organic substance, a first electrode AE. may be disposed on the intermediate organic film 30, the first electrode AE may be connected to the second output electrode se2 through a fifth through hole CH5 penetrating the intermediate organic film 30, an opening portion OP of the pixel defining film PD L may expose at least a portion of the first electrode AE at the pixel defining film PD L defining an opening portion OP., and the pixel defining film PD L may be omitted in an embodiment of the present disclosure.

In an embodiment of the present disclosure, the light emitting region PXA may overlap at least one of the first transistor TR1 and the second transistor TR2 the opening portion OP may be wider, and the first electrode AE and the light emitting layer EM L may also be wider.

The hole control layer HC L may be commonly disposed in the light emitting region PXA and the non-light emitting region npxa. a light emitting layer EM L may be disposed on the hole control layer HC L. the light emitting layer EM L may be disposed in a region corresponding to the opening portion OP. the light emitting layer EM L may include an organic substance and/or an inorganic substance. the light emitting layer EM L may generate predetermined colored light.

An electron control layer EC L may be disposed on the light emitting layer EM L a second electrode CE may be disposed on the electron control layer EC L.

A thin film encapsulation layer TFE may be disposed on the second electrode CE. The thin film encapsulation layer TFE may cover the second electrode CE. A capping layer covering the second electrode CE may be further disposed between the thin film encapsulation layer TFE and the second electrode CE. At this time, the thin film encapsulation layer TFE may directly cover the capping layer.

Fig. 10 is a plan view illustrating a blocking part of a laser crystallization apparatus according to an embodiment of the present disclosure.

Referring to fig. 10, the blocking section BB-1 may include a base section BS-1, a first inversion section F L1, a first beam blocking section BK1, a second inversion section F L2, and a second beam blocking section BK 2.

The first inversion portion F L1 may be disposed over the base portion BS-1, the first beam blocking portion BK1 may be combined with the first inversion portion F L1, the first beam blocking portion BK1 may be disposed in a third state or a fourth state by the first inversion portion F L1, the third state may be a state in which the first beam blocking portion BK1 blocks a portion of a center laser beam included in the divided laser beam D L (refer to fig. 3) and peripheral laser beams surrounding the center laser beam, and the fourth state may be a state in which the first beam blocking portion BK1 does not block the center laser beam.

The second inversion portion F L2 may be disposed over the base portion BS-1, the second inversion portion F L2 may be disposed apart from the first inversion portion F L1 in the first direction DR1, the second beam blocking portion BK2 may be combined with the second inversion portion F L2, the second beam blocking portion BK2 may be disposed in a third state or a fourth state through the second inversion portion F L2, the third state may be a state in which the second beam blocking portion BK2 blocks a portion of the central laser beam, the fourth state may be a state in which the second beam blocking portion BK2 does not block the central laser beam, and the divided laser beam D L (refer to fig. 3) may be incident in the third direction DR 3.

The first and second inversion portions F L1 and F L2 may be independently operated to adjust the arrangement of the first and second light beam blocking portions BK1 and BK2, respectively.

The blocking section BB-1 can pass the first peripheral laser beam D L S-1, and easily measure the incident angle AG (see fig. 3) formed on the major axis of the third laser beam L S3 (see fig. 3).

Blocking section BB-1 allows second peripheral laser beam D L S-2 to pass therethrough, so that incident angle AG (see fig. 3) formed on the short axis of third laser beam L S3 (see fig. 3) can be easily measured.

Fig. 11 is a plan view illustrating a blocking part of a laser crystallization apparatus according to an embodiment of the present disclosure.

Referring to fig. 11, the blocking portion BB-2 may include a base portion BS-2, an inversion portion F L-2, and a beam blocking portion BK-2.

The inversion portion F L-2 may be disposed over the base portion BS-2, the light beam blocking portion BK-2 may be combined with the inversion portion F L-2, the light beam blocking portion BK-2 may be disposed in a fifth state or a sixth state through the inversion portion F L-2, the fifth state may be a state in which the light beam blocking portion BK-2 blocks a portion of the divided laser beam D L (refer to fig. 3), and the sixth state may be a state in which the light beam blocking portion BK-2 does not block the divided laser beam D L (refer to fig. 3).

Blocking section BB-2 can block first peripheral laser beam D L S-1 (see fig. 5) and pass second peripheral laser beam D L S-2, so that incident angle AG (see fig. 3) formed on the short axis of third laser beam L S3 (see fig. 3) can be easily measured.

Fig. 12 is a plan view illustrating a blocking part of a laser crystallization apparatus according to an embodiment of the present disclosure.

Referring to fig. 12, the blocking portion BB-3 may include a base portion BS-3, an inversion portion F L-3, and a light beam blocking portion BK-3.

The inversion portion F L-3 may be disposed over the base portion BS-3, the beam blocking portion BK-3 may be combined with the inversion portion F L-3, the beam blocking portion BK-3 may be disposed in a seventh state or an eighth state through the inversion portion F L-3, the seventh state may be a state in which the beam blocking portion BK-3 blocks a portion of the divided laser beam D L (refer to FIG. 3), and the eighth state may be a state in which the beam blocking portion BK-3 does not block the divided laser beam D L (refer to FIG. 3).

The blocking section BB-3 can pass the first peripheral laser beam D L S-1 and block the second peripheral laser beam D L S-2 (see fig. 5) so that the incident angle AG (see fig. 3) formed on the major axis of the third laser beam L S3 (see fig. 3) can be easily measured.

In an embodiment of the present disclosure, the reverse portion F L-3 may be movable in a direction in which the base portion BS-3 extends, for example, the reverse portion F L-3 may be movable in the first direction DR 1.

The beam blocking section BK-3 can also block the left peripheral laser beam D L S-11 by moving in the first direction DR 1. the blocking section BB-3 can pass the right peripheral laser beam D L S-12 so that the incident angle AG (refer to FIG. 3) formed on the short axis or the long axis of the third laser beam L S3 (refer to FIG. 3) can be easily measured.

The beam blocking section BK-3 can also block the right peripheral laser beam D L S-12 by moving in the first direction DR1 the blocking section BB-3 can pass the left peripheral laser beam D L S-11 so that the incident angle AG (refer to FIG. 3) formed on the short axis or the long axis of the third laser beam L S3 (refer to FIG. 3) can be easily measured.

Fig. 13 is a plan view illustrating a measurement section of a laser crystallization apparatus according to an embodiment of the present disclosure. The same reference numerals are used for the components described with reference to fig. 1 to 9, and the description thereof will be omitted.

Referring to fig. 6 and 13, the laser crystallization apparatus L D may measure AN incident angle AG-1 at the measuring portion CM, the stage ST may include a mounting area AN1 where the substrate SUB is mounted and a peripheral area AN2 around the mounting area AN1, a hole HA2 where the third laser beam L S3 is incident may be defined at the peripheral area AN2, the substrate SUB may not overlap the hole HA2 in a plane, and the third laser beam L S3 may be incident at the incident angle AG-1.

According to an embodiment of the present disclosure, even if the first substrate is removed for the crystallization step T7 (refer to fig. 4) of the second substrate after the crystallization step T1 (refer to fig. 4) of the first substrate is finished, since the third laser beam L S3 is not affected, the measuring section CM may continue to measure the incident angle AG-1. the laser crystallization apparatus L D may save time required for the process.

While the present disclosure has been described with reference to the preferred embodiments, it will be understood by those skilled in the art and those having ordinary knowledge in the art that various changes and modifications may be made without departing from the spirit and scope of the present disclosure. Therefore, the technical scope of the present disclosure should not be limited to the contents described in the detailed description in the specification.