阅读说明：本技术 半导体装置的制造方法 (Method for manufacturing semiconductor device ) 是由 铃木得未 于 2020-01-09 设计创作，主要内容包括：得到能够防止不良状况、降低制造成本、扩大工艺的条件范围的半导体装置的制造方法。在绝缘层(1)之上相互分离地形成第1电极(2)和第2电极(3)。在金属端子(4)的超声波接合部(5)的外周部形成阻挡壁(6),该阻挡壁由与金属端子(4)相同的材料构成。使用超声波工具(9)对金属端子(4)的超声波接合部(5)施加压力和超声波振动,由此将金属端子(4)与第1电极(2)超声波接合。(A method for manufacturing a semiconductor device is provided, which can prevent defects, reduce manufacturing cost, and expand the range of process conditions. A1 st electrode (2) and a 2 nd electrode (3) are formed separately from each other on an insulating layer (1). A barrier wall (6) is formed on the outer peripheral portion of the ultrasonic bonding portion (5) of the metal terminal (4), and is made of the same material as the metal terminal (4). The metal terminal (4) and the 1 st electrode (2) are ultrasonically bonded by applying pressure and ultrasonic vibration to the ultrasonic bonding portion (5) of the metal terminal (4) using an ultrasonic tool (9).)

1. A method for manufacturing a semiconductor device, comprising the steps of:

forming a 1 st electrode and a 2 nd electrode separately from each other over the insulating layer;

forming a barrier wall on an outer circumferential portion of an ultrasonic bonding portion of a metal terminal, the barrier wall being made of the same material as the metal terminal; and

applying pressure and ultrasonic vibration to the ultrasonic bonding portion of the metal terminal using an ultrasonic tool, thereby ultrasonically bonding the metal terminal to the 1 st electrode.

2. The method for manufacturing a semiconductor device according to claim 1,

the metal terminal has a distal end portion including the ultrasonic bonding portion and a body portion bent upward with respect to the distal end portion,

the blocking wall is not formed on the outer peripheral portion of the ultrasonic bonding portion on the main body portion side.

3. The method for manufacturing a semiconductor device according to claim 2,

a lower surface of the front end portion of the metal terminal is a plane.

4. The method for manufacturing a semiconductor device according to any one of claims 1 to 3,

the inner side of the barrier wall is tapered.

5. The method for manufacturing a semiconductor device according to any one of claims 1 to 3,

a concave portion is provided on the lower side of the inner side surface of the barrier wall.

6. The method for manufacturing a semiconductor device according to any one of claims 1 to 5,

the barrier wall is formed only on the 2 nd electrode side in the outer peripheral portion of the ultrasonic bonding portion.

Technical Field

The present invention relates to a method for manufacturing a semiconductor device.

Background

When the metal terminal and the electrode are ultrasonically bonded, pressure and ultrasonic vibration are applied to the metal terminal using an ultrasonic tool. A technique has been proposed in which a material having a different linear expansion coefficient from that of the metal terminal is provided at the ultrasonic bonding portion of the metal terminal (see, for example, patent document 1), but there is a problem in that the manufacturing cost increases.

Patent document 1: japanese patent laid-open publication No. 2016-134547

In the ultrasonic bonding, metal chips are generated in the process of the metal terminal being deformed by ultrasonic vibration and pressure. The metal chips may short-circuit with adjacent electrodes, causing a problem. Therefore, an operation of removing the metal chips must be added after the completion of the process. In addition, in order to suppress the generation of metal chips, it is necessary to study the shape of the ultrasonic tool, process conditions, and the like. Therefore, there are problems that the manufacturing cost increases and the process condition range becomes narrow.

Disclosure of Invention

The present invention has been made to solve the above problems, and an object of the present invention is to provide a method for manufacturing a semiconductor device, which can prevent a trouble, reduce manufacturing cost, and widen a process condition range.

The method for manufacturing a semiconductor device according to the present invention includes the steps of: forming a 1 st electrode and a 2 nd electrode separately from each other over the insulating layer; forming a barrier wall on an outer circumferential portion of an ultrasonic bonding portion of a metal terminal, the barrier wall being made of the same material as the metal terminal; and applying pressure and ultrasonic vibration to the ultrasonic bonding portion of the metal terminal using an ultrasonic tool, thereby ultrasonically bonding the metal terminal to the 1 st electrode.

ADVANTAGEOUS EFFECTS OF INVENTION

In the present invention, a barrier wall is formed at an outer peripheral portion of the ultrasonic bonding portion of the metal terminal. The barrier wall intercepts swarf generated in the ultrasonic bonding. Therefore, the occurrence of a trouble due to short-circuiting between the metal chips and the adjacent 2 nd electrode can be prevented. Accordingly, the distance between the 1 st electrode and the 2 nd electrode can be reduced, and therefore, the semiconductor device can be miniaturized. Further, since it is not necessary to study the shape of the ultrasonic tool, the process conditions, and the like, the range of process conditions can be expanded. In addition, no metal scrap removal operation is required after the process is completed. Further, since the barrier wall is made of the same material as the metal terminal, the manufacturing is easy. Therefore, the manufacturing cost can be reduced.

Drawings

Fig. 1 is a perspective view showing a method of manufacturing a semiconductor device according to embodiment 1.

Fig. 2 is a sectional view taken along line I-II of fig. 1.

Fig. 3 is a perspective view showing a metal terminal according to embodiment 1.

Fig. 4 is a sectional view taken along III-IV of fig. 1.

Fig. 5 is a cross-sectional view showing a case where ultrasonic bonding is performed by the method for manufacturing a semiconductor device according to the comparative example.

Fig. 6 is a cross-sectional view showing a case where ultrasonic bonding is performed by the method for manufacturing a semiconductor device according to the comparative example.

Fig. 7 is a sectional view showing a state where metal terminals are ultrasonically bonded by the method for manufacturing a semiconductor device according to embodiment 1.

Fig. 8 is a perspective view showing a modification of the metal terminal according to embodiment 1.

Fig. 9 is a cross-sectional view showing a state in which an ultrasonic tool is pressed against a modified example of the metal terminal according to embodiment 1.

Fig. 10 is a cross-sectional view showing a state where ultrasonic bonding is performed according to a modification of the method for manufacturing a semiconductor device according to embodiment 1.

Fig. 11 is a perspective view showing a metal terminal according to embodiment 2.

Fig. 12 is a sectional view showing a state where an ultrasonic tool is pressed against the metal terminal according to embodiment 2.

Fig. 13 is a sectional view showing a state where ultrasonic bonding is performed by the method for manufacturing a semiconductor device according to embodiment 2.

Fig. 14 is a perspective view showing a modification of the metal terminal according to embodiment 2.

Fig. 15 is a cross-sectional view showing a state in which an ultrasonic tool is pressed against a modified example of the metal terminal according to embodiment 2.

Fig. 16 is a cross-sectional view showing a state where ultrasonic bonding is performed according to a modification of the method for manufacturing a semiconductor device according to embodiment 2.

Fig. 17 is a perspective view showing a metal terminal according to embodiment 3.

Fig. 18 is a sectional view showing a state where an ultrasonic tool is pressed against the metal terminal according to embodiment 3.

Fig. 19 is a sectional view showing a state where ultrasonic bonding is performed by the method for manufacturing a semiconductor device according to embodiment 3.

Fig. 20 is a perspective view showing a modification of the metal terminal according to embodiment 3.

Fig. 21 is a cross-sectional view showing a state in which an ultrasonic tool is pressed against a modified example of the metal terminal according to embodiment 3.

Fig. 22 is a cross-sectional view showing a state where ultrasonic bonding is performed according to a modification of the method for manufacturing a semiconductor device according to embodiment 3.

Description of the reference numerals

1 insulating layer, 21 st electrode, 3 nd electrode, 2 nd electrode, 4 metal terminal, 5 ultrasonic bonding part, 6 barrier wall, 7 front end part, 8 main body part, 9 ultrasonic tool, 11 concave part.

Detailed Description

A method for manufacturing a semiconductor device according to an embodiment will be described with reference to the drawings. The same or corresponding components are denoted by the same reference numerals, and redundant description may be omitted.