阅读说明：本技术 一种宽带、高干扰消除能力的射频低噪声放大器 (Radio frequency low noise amplifier with broadband and high interference elimination capability ) 是由 李秀萍 李昱冰 杨农军 于 2020-06-08 设计创作，主要内容包括：本发明涉及一种宽带、高干扰消除能力的射频低噪声放大器,其解决了现有射频集成电路在强电磁干扰环境工作时,性能恶化的技术问题,其设有宽带输入匹配模块、双谐振负载模块、高干扰抑制率陷波滤波器模块、增益峰化模块。通过利用第二MOS管的漏极与第四MOS管的漏极短接,利用环路反馈产生负阻消除第四电感的损耗,同时第二MOS管工作在亚阈值区域的低功耗状态,接着第三电容作为第二MOS管的源退化电容,提高了干扰抑制陷波滤波器的品质因数,从而大大增强了电路的干扰抑制性能。本发明可广泛应于抗干扰能力强的低功耗射频前端电路设计领域。(The invention relates to a broadband radio frequency low noise amplifier with high interference elimination capability, which solves the technical problem of performance deterioration of the existing radio frequency integrated circuit when working in a strong electromagnetic interference environment. The drain electrode of the second MOS tube is in short circuit with the drain electrode of the fourth MOS tube, the loss of the fourth inductor is eliminated by utilizing the negative resistance generated by loop feedback, meanwhile, the second MOS tube works in a low-power consumption state of a subthreshold region, and then the third capacitor is used as a source degeneration capacitor of the second MOS tube, so that the quality factor of the interference suppression notch filter is improved, and the interference suppression performance of the circuit is greatly enhanced. The invention can be widely applied to the field of low-power-consumption radio frequency front-end circuit design with strong anti-jamming capability.)

1. A radio frequency low noise amplifier with broadband and high interference elimination capability is characterized by being provided with a broadband input matching module, a double-resonance load module, a high interference rejection rate notch filter module and a gain peaking module;

the broadband input matching module is used for realizing broadband matching and maximum power transmission and converting alternating small signal voltage into alternating small signal current;

the double-resonance load module is used for realizing broadband gain and amplifying broadband signals with low noise;

the high-interference rejection rate notch filter module improves the quality factor and enhances the interference rejection performance of the circuit;

the gain peaking module is used for realizing high-frequency gain expansion and realizing wider bandwidth;

the broadband input matching module is connected with the double-resonance load module, the gain peaking module is simultaneously connected with the broadband input matching module and the double-resonance load module, the gain peaking module is also connected with the high-interference rejection rate notch filter module, the broadband input matching module is connected with RFin, and the gain peaking module is connected with RFout.

2. The broadband high-interference-cancellation-capability radio frequency low-noise amplifier according to claim 1, wherein the broadband input matching module comprises a first capacitor, a first inductor and a first MOS transistor;

the double-resonance load module comprises a second inductor, a third inductor and a second capacitor;

the high interference rejection rate notch filter module comprises a third capacitor, a fourth inductor, a second MOS (metal oxide semiconductor) tube and a third MOS tube;

the gain peaking module comprises a fourth MOS tube, a fifth inductor, a first resistor and a second resistor;

wherein:

the first end of the first capacitor is used as the input end of the low noise amplifier, and the other end of the first capacitor is connected with the first end of the first inductor and the source electrode of the first MOS tube;

the other end of the first inductor is directly connected to the ground, the first end of the second inductor is connected with the drain electrode of the first MOS transistor and the first end of the third inductor, and the other end of the second inductor is connected with a first power supply;

the grid electrode of the first MOS tube is connected with a first bias voltage, and the other end of the third inductor is connected with the first end of the second capacitor;

the other end of the second capacitor is connected with the first end of the first resistor and the grid electrode of the fourth MOS tube, and the other end of the first resistor is connected with a second bias voltage;

the source electrode of the fourth MOS tube is directly connected to the ground, and the drain electrode of the fourth MOS tube is connected with the drain electrode of the second MOS tube, the first end of the fourth inductor and the source electrode of the fifth MOS tube;

the grid electrode of the second MOS tube is connected with the other end of the fourth inductor, and the source electrode of the second MOS tube is connected with the drain electrode of the third MOS tube and the first end of the third capacitor;

the other end of the third capacitor is directly connected to the ground, the gate of the third MOS transistor is connected with a third bias voltage, and the source of the third MOS transistor is directly connected to the ground;

the grid electrode of the fifth MOS tube is connected to a second power supply voltage, the drain electrode of the fifth MOS tube is connected to the first end of the fifth inductor and serves as the output end of the low noise amplifier, the other end of the fifth inductor is connected with the first end of the second resistor, and the other end of the second resistor is connected to the second power supply voltage.

3. The wideband, high interference cancellation capability rf low noise amplifier according to claim 2, wherein in the dual resonant load module and the gain peaking module, the second inductor, the third inductor and the fifth inductor together determine a bandwidth of the low noise amplifier, and the second resistor determines a gain flatness of the low noise amplifier.

4. The wideband high-interference-rejection radio frequency low noise amplifier according to claim 2, wherein in the high-interference-rejection notch filter module, the second MOS transistor operates at sub-threshold for efficiently generating negative resistance and eliminating the intrinsic resistive loss of the fourth inductor, the third capacitor is used to increase the quality factor of the notch filter, and changing the third bias voltage can adjust the interference-rejection effect.

5. A radio frequency front end integrated circuit comprising a wideband, high interference cancellation radio frequency low noise amplifier according to any of claims 1-4.

Technical Field

The invention relates to the technical field of radio frequency amplification circuit design, in particular to a radio frequency low noise amplifier with broadband and high interference elimination capability.

Background

With the development of radio frequency integrated circuit technology and technology, wireless technology is developing towards large data capacity and high speed, and Ultra Wide Band (UWB) technology is the most promising wireless communication technology for solving the application problem of short-distance high-speed communication at present. The method has the advantages of good confidentiality, low power consumption, high data rate, strong multipath resistance and the like. Under the FCC standard, the emission power spectral density of the UWB frequency band of 3.1-10.6GHz is below-41.3 dBm/MHz, and a large number of interference signals with different frequency points exist in the UWB frequency band, so that the sensitivity performance of a broadband receiver is greatly reduced.

The low noise amplifier, which is the most important part of the radio frequency receiver, needs to amplify a weak signal without distortion, and for a wideband low noise amplifier, a strong interference signal exists in a passband, and the interference signal needs to be sufficiently suppressed to prevent distortion of a useful signal and saturation of a subsequent stage circuit caused by the interference signal.

The planar spiral inductor in the radio frequency integrated circuit generally has a very low quality factor (approximately equal to 10), and the trap suppression of the on-chip inductor on an interference frequency point cannot obtain a high suppression rate and cannot meet the design requirement of a system.

Disclosure of Invention

The invention provides a radio frequency low noise amplifier with excellent broadband and high interference elimination capability in the strong electromagnetic interference environment, aiming at solving the technical problem of performance deterioration of the existing radio frequency integrated circuit in the strong electromagnetic interference environment.

The invention provides a broadband radio frequency low noise amplifier with high interference elimination capability, which is provided with a broadband input matching module, a double-resonance load module, a high interference rejection rate notch filter module and a gain peaking module;

the broadband input matching module is used for realizing broadband matching and maximum power transmission and converting the alternating small signal voltage into alternating small signal current;

the double-resonance load module is used for realizing broadband gain and amplifying broadband signals with low noise;

the high-interference rejection rate notch filter module improves the quality factor and enhances the interference rejection performance of the circuit;

the gain peaking module is used for realizing high-frequency gain expansion and realizing wider bandwidth;

the broadband input matching module is connected with the double-resonance load module, the gain peaking module is simultaneously connected with the broadband input matching module and the double-resonance load module, the gain peaking module is further connected with the high-interference rejection rate notch filter module, the broadband input matching module is connected with the RFin, and the gain peaking module is connected with the RFout.

Preferably, the broadband input matching module comprises a first capacitor, a first inductor and a first MOS transistor;

the double-resonance load module comprises a second inductor, a third inductor and a second capacitor;

the high interference rejection rate notch filter module comprises a third capacitor, a fourth inductor, a second MOS (metal oxide semiconductor) tube and a third MOS tube;

the gain peaking module comprises a fourth MOS tube, a fifth inductor, a first resistor and a second resistor;

wherein:

the first end of the first capacitor is used as the input end of the low noise amplifier, and the other end of the first capacitor is connected with the first end of the first inductor and the source electrode of the first MOS tube;

the other end of the first inductor is directly connected to the ground, the first end of the second inductor is connected with the drain electrode of the first MOS transistor and the first end of the third inductor, and the other end of the second inductor is connected with the first power supply;

the grid electrode of the first MOS tube is connected with a first bias voltage, and the other end of the third inductor is connected with the first end of the second capacitor;

the other end of the second capacitor is connected with the first end of the first resistor and the grid electrode of the fourth MOS tube, and the other end of the first resistor is connected with a second bias voltage;

the source electrode of the fourth MOS tube is directly connected to the ground, and the drain electrode of the fourth MOS tube is connected with the drain electrode of the second MOS tube, the first end of the fourth inductor and the source electrode of the fifth MOS tube;

the grid electrode of the second MOS tube is connected with the other end of the fourth inductor, and the source electrode of the second MOS tube is connected with the drain electrode of the third MOS tube and the first end of the third capacitor;

the other end of the third capacitor is directly connected to the ground, the grid electrode of the third MOS tube is connected with a third bias voltage, and the source electrode of the third MOS tube is directly connected to the ground;

the grid electrode of the fifth MOS tube is connected to the second power supply voltage, the drain electrode of the fifth MOS tube is connected to the first end of the fifth inductor and serves as the output end of the low-noise amplifier, the other end of the fifth inductor is connected with the first end of the second resistor, and the other end of the second resistor is connected to the second power supply voltage.

Preferably, in the dual-resonant load module and the gain peaking module, the second inductor, the third inductor and the fifth inductor together determine a bandwidth of the low noise amplifier, and the second resistor determines a gain flatness of the low noise amplifier.

Preferably, in the high interference rejection rate notch filter module, the second MOS transistor operates at a sub-threshold to efficiently generate a negative resistance and eliminate an internal resistance loss of the fourth inductor, the third capacitor is used to improve a quality factor of the notch filter, and an interference rejection effect can be adjusted by changing the third bias voltage.

The invention also provides a radio frequency front end integrated circuit comprising a broadband, high interference cancellation capability radio frequency low noise amplifier as claimed in any one of claims 1 to 4.

The invention has the beneficial effects that:

the low-noise amplifier comprises a broadband input matching module, a matching resistor which is close to 50 omega in a broadband is obtained by virtue of the inherent impedance characteristic of a common grid structure of a first MOS tube, the influence of input parasitic capacitance on input impedance in high frequency is eliminated by connecting a first inductor ground in series with a source electrode of the first MOS tube, the input matching bandwidth is expanded to a great extent, and the low-noise amplifier can work in a very wide frequency band.

The low-noise amplifier comprises a double-resonance load module, wherein the second inductor and the third inductor are used as drain electrode loads of the first MOS tube, and the gain resonance peak is pushed to high frequency and low frequency by using a double-resonance technology, so that the gain of a broadband is realized without introducing extra power consumption.

According to the low-noise amplifier, through the high-interference rejection rate notch filter module, the drain electrode of the second MOS tube is in short circuit with the drain electrode of the fourth MOS tube, the loss of the fourth inductor is eliminated through negative resistance generated by loop feedback, meanwhile, the second MOS tube works in a low-power consumption state in a subthreshold region, and then the third capacitor is used as a source degeneration capacitor of the second MOS tube, so that the quality factor of the interference rejection notch filter is improved, and the interference rejection performance of a circuit is greatly enhanced.

Drawings

FIG. 1 is a diagram of an integrated circuit module connection according to the present invention;

FIG. 2 is a schematic diagram of an integrated circuit of the present invention;

fig. 3 is a figure of merit for a high rejection rate notch filter module of the present invention at a different third capacitance Cn;

FIG. 4 is a schematic diagram of the gain effect of each stage and the overall gain superposition according to the present invention;

fig. 5 is a graph of simulation results of voltage gain of the present invention.

Description of the symbols of the drawings:

1. a broadband input matching module; 2. a dual resonant load module; 3. a high interference rejection rate notch filter module; 4. and a gain peaking module.

Detailed Description

The present invention is further described below with reference to the drawings and examples so that those skilled in the art can easily practice the present invention.

As shown in fig. 1, a connection diagram of a wideband rf low noise amplifier integrated circuit module with high interference cancellation capability provided by the present invention is shown, where the rf low noise amplifier integrated circuit module includes:

the device comprises a broadband input matching module 1, a double-resonance load module 2, a high-interference rejection rate notch filter module 3 and a gain peaking module 4.

The broadband input matching module 1 is used for realizing broadband 50 omega matching from an antenna end to a low-noise amplifier, realizing maximum power transmission and simultaneously converting alternating small-signal voltage into alternating small-signal current.

The dual-resonance load module 2 is used to realize a broadband gain, so that the low-noise amplifier shown in the embodiment can perform low-noise amplification on a broadband signal.

The high interference rejection rate notch filter module 3 utilizes the short circuit of the drain electrode of the second MOS transistor and the drain electrode of the fourth MOS transistor, utilizes the loop feedback to generate a negative resistance, eliminates the loss of the fourth inductor, simultaneously, the second MOS transistor works in a low power consumption state of a subthreshold region, and the third capacitor is used as a source degeneration capacitor of the second MOS transistor, so that the quality factor of the interference rejection notch filter is improved, and the interference rejection performance of the circuit is greatly enhanced.

The gain peaking module 4 is used for realizing high-frequency gain expansion and realizing wider bandwidth;

the broadband input matching module 1 is connected with the double-resonance load module 2, the gain peaking module 4 is simultaneously connected with the broadband input matching module 1 and the double-resonance load module 2, the gain peaking module 4 is also connected with the high-interference rejection rate notch filter module 3, the broadband input matching module 1 is connected with RFin, and the gain peaking module 4 is connected with RFout.

Specifically, as shown in fig. 2, in this embodiment: the broadband input matching module 1 comprises a first capacitor Cb, a first MOS transistor M1 and a first inductor Lb; the dual-resonance load module 2 comprises a second capacitor Cs1, a second inductor Lp1 and a third inductor Ls 1; the high interference rejection rate notch filter module 3 comprises a third capacitor Cn, a fourth inductor Ln, a second MOS transistor M4 and a third MOS transistor M5; the gain peaking module 4 comprises a fifth inductor Lp2, a fourth MOS transistor M2, a fifth MOS transistor M3, a first resistor Rb and a second resistor Rs 1; the power supply is also provided with an input port Vin, an output port Vout, a first power supply voltage VDD1, a second power supply voltage VDD2, a first bias voltage Vb1, a second bias voltage Vb2 and a third bias voltage Vb 3; wherein:

a first end of the first capacitor Cb serves as the input terminal Vin of the low noise amplifier in the embodiment, and the other end of the first capacitor Cb is connected to the first end of the first inductor Lb and the source of the first MOS transistor M1.

The other end of the first inductor Lb is directly connected to ground, the first end of the second inductor Lp1 is connected to the drain of the first MOS transistor M1 and the first end of the third inductor Ls1, and the other end of the second inductor Lp1 is connected to the first power supply VDD 1.

The gate of the first MOS transistor M1 is connected to the first bias voltage Vb1, and the other end of the third inductor Ls1 is connected to the first end of the second capacitor Cs 1.

The other end of the second capacitor Cs1 is connected to the first end of the first resistor Rb and the gate of the fourth MOS transistor M2, and the other end of the first resistor Rb is connected to the second bias voltage Vb 2.

The source of the fourth MOS transistor M2 is directly connected to ground, and the drain of the fourth MOS transistor M2 is connected to the drain of the second MOS transistor M4, the first end of the fourth inductor Ln, and the source of the fifth MOS transistor M3.

The gate of the second MOS transistor M4 is connected to the other end of the fourth inductor Ln, and the source of the second MOS transistor M4 is connected to the drain of the third MOS transistor M5 and the first end of the third capacitor Cn.

The other end of the third capacitor Cn is directly connected to ground, the gate of the third MOS transistor M5 is connected to the third bias voltage Vb3, and the source of the third MOS transistor M5 is directly connected to ground.

The gate of the fifth MOS transistor M3 is connected to the second power supply voltage VDD2, the drain of the fifth MOS transistor M3 is connected to the first end of the fifth inductor Lp2 as the output terminal Vout of the low noise amplifier of the embodiment, the other end of the fifth inductor Lp2 is connected to the first end of the second resistor Rs1, and the other end of the second resistor Rs1 is connected to the second power supply voltage VDD 2.

The specific operation principle of the integrated circuit schematic diagram of the broadband high-interference-cancellation-capability radio frequency low-noise amplifier provided by the invention in fig. 2 is as follows:

the specific embodiment is a low-noise amplifier with high interference elimination capability working at 3.1-10.6GHz, and the broadband input matching module 1 realizes broadband matching with a broadband antenna at 3.1-10.6GHz so as to realize maximum power transmission and better noise performance.

The transconductance of the first MOS transistor M1 directly provides the real impedance of the input matching module, and the real impedance ideally relates to the magnitude of the transconductance, and the transconductance can be set to 20mS by changing the first bias voltage Vb1, so that the real impedance of 50 Ω is generated.

The first inductor Lb is used to resonate with the source capacitor of the first MOS transistor M1, so that broadband input matching is realized.

In the dual-resonance load module 2, the drain capacitance of the first MOS transistor M1 and the second inductance Lp1 form parallel resonance, the resonance center frequency is w _0 and is located at the center frequency of 3.1-10.6GHz, the third inductance Ls1 and the gate capacitance of the fourth MOS transistor M2 form series resonance, the resonance frequency is also w _0 and is located at the center frequency of 3.1-10.6GHz, the two resonance networks form parallel and serial dual-resonance load networks to form two resonance peaks of high frequency and low frequency, and therefore high gain in a wide band is achieved.

In the high rejection rate notch filter module 3, the drain of the second MOS transistor M4 is shorted with the drain of the fourth MOS transistor M2, and the formed loop generates a negative resistance, so that the real part of the input impedance Z _ in looking into the high rejection rate notch filter module 3 from the drain of the fourth MOS transistor M2 at the frequency w _ n is 0, thereby eliminating the loss of the fourth inductor Ln as a notch filter. Further, the third capacitor Cn serves as a source degeneration capacitor of the second MOS transistor M4 to pull the notch frequency of the high-rejection-ratio notch filter module 3 up to w _ n, so as to obtain Z _ in equal to 0 at w _ n, thereby improving the quality factor of the notch filter, and enabling the interference with frequency w _ n to be completely attenuated by the high-rejection-ratio notch filter module 3.

Referring to the quality factors of the high-rejection-rate notch filter module 3 provided in fig. 3 under different third capacitances Cn, the larger the quality factor is, the better the rejection effect of the interference is. The abscissa of fig. 3 is frequency (GHz), the ordinate is quality factor, different curves represent quality factors under different third capacitances Cn, and the quality factor of the original fourth inductance Ln is 10, and simulation results prove that the high interference rejection rate notch filter module 3 can improve the quality factor of the notch filter, and meanwhile, the third capacitance Cn can be adjusted to conveniently adjust the quality factor.

Referring to fig. 4, a schematic diagram of the superposition of gain effects of each stage and the overall gain of the broadband high-interference-cancellation-capability rf low-noise amplifier integrated circuit is shown, where the dual-resonant load module 2 includes two high-gain points at high and low frequencies, the high-interference-rejection-rate notch filter module 3 suppresses the gain at the interference frequency, and the gain peaking module 4 is used to compensate the gain at the high frequency, so that the broadband gain effect is flat.

Referring to fig. 5, where the abscissa of fig. 5 is frequency (GHz) and the ordinate is power gain (dB), fig. 5 is a simulation result of the circuit of fig. 2, and under the broadband and high-linearity radio frequency low noise amplifier provided in the embodiment of fig. 2, a maximum power gain of 16.05dB is achieved, bandwidths of 3dB in high and low frequency bands are 6.2-10.1GHz and 3.3-4.6GHz, an interference rejection ratio to 5.8GHz is 40.9dB, and the notch filter module 3 with high interference rejection ratio only consumes 0.456mA current.

The above description is only for the purpose of illustrating preferred embodiments of the present invention and is not to be construed as limiting the present invention, and it is apparent to those skilled in the art that various modifications and variations can be made in the present invention. All changes, equivalents, modifications and the like which come within the scope of the invention as defined by the appended claims are intended to be embraced therein.