阅读说明：本技术 一种具有微米结构的电极的制作方法 (Method for manufacturing electrode with micron structure ) 是由 陈战东 于 2019-11-22 设计创作，主要内容包括：本发明涉及放电设备电极制作技术领域,具体为一种具有微米结构的电极的制作方法,包括清洗硅片、预烘、匀胶、前烘、曝光、显影与清洗、后烘和蒸镀金属膜共八个步骤。本发明充分运用光刻和镀膜技术制得具有微米结构的电极,用这种电极代替现有等离子体放电设备的负电极,接着将样品放置于该负电极之上,待等离子体放电设备通电后,由于负电极具有微米立体图形阵列,因此会产生不均匀的电场,在该不均匀电场的控制下,等离子体放电设备将依据负电极的微米立体图形阵列对样品薄膜表面进行微米尺度的处理,实现了对材料薄膜表面的可控处理。本发明具有制作成本低廉、方法简便、使用简单等优点。(The invention relates to the technical field of electrode manufacturing of discharge equipment, in particular to a manufacturing method of an electrode with a micron structure. The invention fully uses photoetching and film coating technology to prepare the electrode with the micron structure, the electrode is used for replacing the negative electrode of the existing plasma discharge equipment, then a sample is placed on the negative electrode, after the plasma discharge equipment is electrified, the negative electrode has a micron three-dimensional pattern array, so that an uneven electric field can be generated, and under the control of the uneven electric field, the plasma discharge equipment carries out micron scale treatment on the surface of the sample film according to the micron three-dimensional pattern array of the negative electrode, thereby realizing the controllable treatment on the surface of the material film. The invention has the advantages of low manufacturing cost, simple method, simple use and the like.)

1. A method for manufacturing an electrode with a microstructure is characterized by comprising the following steps:

step (1), cleaning a silicon wafer: placing the high-resistance silicon wafer into a beaker containing alcohol, then placing the beaker into an ultrasonic cleaning machine for cleaning for 5-15 min, clamping the high-resistance silicon wafer out by using tweezers after cleaning is finished, and drying residual alcohol solution on the surface of the high-resistance silicon wafer by using nitrogen;

pre-baking: putting the cleaned high-resistance silicon wafer into a ceramic crucible, and putting the ceramic crucible into an oven for primary baking;

homogenizing glue in the step (3): taking the silicon wafer out of the oven, placing the silicon wafer in a normal temperature environment, and after the silicon wafer is naturally cooled, placing the silicon wafer into a sucker of a spin coater for spin coating;

pre-baking in step (4): placing the silicon wafer coated with the photoresist in a crucible, wrapping the crucible with tinfoil, and placing the crucible in an oven for secondary baking;

step (5), exposure: exposing and photoetching the silicon wafer subjected to prebaking by using a photoetching machine, namely, placing a mask plate right above the silicon wafer, and exposing the silicon wafer by aligning the center of an ultraviolet light source to the mask plate for 3-4 s;

and (6) developing and cleaning: immersing the exposed silicon wafer in a developing solution for 25s-35s, taking out the silicon wafer after the developing solution is fully developed, putting the silicon wafer into deionized water for cleaning for 20s-40s, and drying the deionized water on the surface of the silicon wafer by using nitrogen after cleaning is finished;

and (7) postbaking: placing the developed silicon wafer into an oven for third baking;

step (8) evaporating a metal film: and plating a metal film on the photoetched silicon wafer by adopting a plasma sputtering coating technology.

2. The method of claim 1, wherein the step of forming the electrode comprises: the resistivity of the high-resistance silicon wafer is larger than 2000 omega cm.

3. The method of claim 1, wherein the step of forming the electrode comprises:

the first baking temperature is 90-100 ℃ and the time is 15-20 min, the second baking temperature is 110 ℃ and the time is 25-35 min, and the third baking temperature is 100 ℃ and the time is 3-5 min.

4. The method of claim 1, wherein the step of forming the electrode comprises:

the spin coating refers to dripping photoresist into the center of the silicon wafer until the photoresist is fully distributed on the whole silicon wafer, pressing down a photoresist homogenizing switch of a photoresist homogenizer, homogenizing for 8-10 s under the condition of the rotating speed of 400-500 r/min, and then increasing the rotating speed to 3500-5000 r/min and continuing to rotate for 25-35 s until the thickness of the photoresist is 3-8 μm.

5. The method of claim 4, wherein the step of forming the electrode comprises: the photoresist is an RFJ-210 negative photoresist.

6. The method of claim 1, wherein the step of forming the electrode comprises:

the mask is fourSquare and with a graphic array in the middle, consisting of M rows and N columns of graphics, 10 of which⁴≤M≤10⁵And is an integer of 10⁴≤N≤10⁵The patterns are integers, the vertical length L1 of each pattern is in the range of 1-10 μm, the horizontal width L2 of each pattern is in the range of 1-10 μm, the transverse spacing d1 between every two patterns is in the range of 5-100 μm, and the longitudinal spacing d2 between every two patterns is in the range of 5-100 μm.

7. The method for manufacturing an electrode with a micro-structure according to claim 1, wherein the plasma sputtering coating technology comprises the following steps:

the first step is as follows: clamping the photoetched silicon wafer on a substrate table of a plasma experimental instrument, adjusting the height of the substrate table to enable the distance between the substrate table and the metal target material to be 10-15 mm, and covering a cover of a vacuum chamber;

the second step is that: sequentially turning on a main power supply, cooling water, a vacuum pump and a resistance vacuum gauge button of the plasma experimental instrument, and then turning on a direct-current sputtering knob, wherein the sputtering air inlet knob must be kept in a closed state;

the third step: when the pressure of the vacuum chamber is reduced to 10-20 Pa, a switch knob of a working gas cylinder is unscrewed, a sputtering gas inlet knob is turned on, and the sputtering gas inlet knob and a direct current sputtering knob are adjusted to stabilize the pressure of the vacuum chamber at 30-50 Pa;

the fourth step: turning on a high-voltage power switch, rotating a high-voltage adjusting coarse adjustment knob, controlling the voltage between two electrodes of a vacuum chamber to be 400V-500V, controlling the current to be 10mA-20mA, plating a metal film with the thickness of h1 on a silicon wafer according to the direct-current sputtering principle, and controlling the plating time to be 30min-50 min;

the fifth step: after the film coating is finished, firstly rotating a high-voltage adjusting coarse adjustment knob to adjust the voltage of the vacuum chamber to zero, then closing a high-voltage power switch, and then sequentially closing a sputtering air inlet knob, a direct-current sputtering knob, a resistance vacuum gauge, a vacuum pump, cooling water, a main power supply and a switch knob of a working gas cylinder;

and a sixth step: loosening an air inlet knob of the vacuum chamber, slowly filling air, taking down a cover of the vacuum chamber, taking out the silicon wafer subjected to film coating by using tweezers, and putting the silicon wafer into a sample box;

the seventh step: and (3) firstly washing the photoresist on the silicon wafer by using the photoresist solution, then washing the silicon wafer by using the deionized water, and completing the preparation of the electrode with the micron structure.

8. The method of claim 7, wherein the step of forming the electrode comprises: the metal target comprises copper, aluminum and zinc.

9. The method of claim 7, wherein the step of forming the electrode comprises: the working gas cylinder is an argon gas cylinder or a nitrogen gas cylinder.

10. The method of claim 7, wherein the step of forming the electrode comprises: the thickness h1 of the metal film is 3-8 μm.

Technical Field

The invention relates to the technical field of manufacturing of electrodes of discharge equipment, in particular to a manufacturing method of an electrode with a micron structure.

Background

The existing plasma surface treatment equipment ionizes gas by high voltage between a cathode and an anode to form plasma, and cations in the plasma bombard the surface of a sample film arranged above the anode under the drive of an electric field between the two electrodes, so that the surface treatment of the sample film is realized. However, because the anode and the cathode of the existing device both use flat metal plates, the electric field is uniformly distributed in the areas near the surfaces of the two electrodes, which results in uniform bombardment of the surface of the sample film by the cation current, and thus the surface of the sample film cannot be controllably treated, i.e. the original properties of the material, such as photoelectricity, hydrophobicity, etc., cannot be changed according to the requirements of technicians. If the surface of the material film is subjected to controllable treatment by adopting technologies such as electron beam etching and the like, the manufacturing cost is too high due to the extremely high price of the equipment, so that the material film does not have the condition of large-scale popularization and use.

Disclosure of Invention

Aiming at the problems, the invention provides a method for manufacturing an electrode with a micron structure, which fully utilizes the photoetching technology and the film coating technology, firstly, a negative photoresist is coated on a high-resistance silicon wafer in a spinning way, then, one surface of the high-resistance silicon wafer is photoetched through a mask plate with a pattern array grid structure in the middle, so that the photoetching surface of the silicon wafer is provided with a micron three-dimensional pattern array, and then, a metal film is evaporated on the photoetching surface of the silicon wafer by utilizing the plasma sputtering film coating technology, thereby manufacturing the electrode with the micron structure. And finally, the electrode is used for replacing a negative electrode of the existing plasma discharge equipment, then a sample is placed on the negative electrode, after the plasma discharge equipment is electrified, an uneven electric field can be generated due to the fact that the negative electrode is provided with the micron three-dimensional pattern array, namely, the electric field distribution between the electrodes is regulated and controlled, so that the plasma flow is regulated and controlled, under the control of the uneven electric field, the plasma discharge equipment can carry out micron-scale treatment on the surface of the sample film according to the micron three-dimensional pattern array of the negative electrode, and controllable treatment on the surface of the material film is realized. The invention has the advantages of low manufacturing cost, simple and convenient method, simple use and the like, and effectively solves the problems.

The technical scheme adopted by the invention is as follows:

a method for manufacturing an electrode with a microstructure is characterized by comprising the following steps:

step (1), cleaning a silicon wafer: placing the high-resistance silicon wafer into a beaker containing alcohol, then placing the beaker into an ultrasonic cleaning machine for cleaning for 5-15 min, clamping the high-resistance silicon wafer out by using tweezers after cleaning is finished, and drying residual alcohol solution on the surface of the high-resistance silicon wafer by using nitrogen;

pre-baking: putting the cleaned high-resistance silicon wafer into a ceramic crucible, and putting the ceramic crucible into an oven for primary baking;

homogenizing glue in the step (3): taking the silicon wafer out of the oven, placing the silicon wafer in a normal temperature environment, and after the silicon wafer is naturally cooled, placing the silicon wafer into a sucker of a spin coater for spin coating;

pre-baking in step (4): placing the silicon wafer coated with the photoresist in a crucible, wrapping the crucible with tinfoil, and placing the crucible in an oven for secondary baking;

step (5), exposure: exposing and photoetching the silicon wafer subjected to prebaking by using a photoetching machine, namely, placing a mask plate right above the silicon wafer, and exposing the silicon wafer by aligning the center of an ultraviolet light source to the mask plate for 3-4 s;

and (6) developing and cleaning: immersing the exposed silicon wafer in a developing solution for 25s-35s, taking out the silicon wafer after the developing solution is fully developed, putting the silicon wafer into deionized water for cleaning for 20s-40s, and drying the deionized water on the surface of the silicon wafer by using nitrogen after cleaning is finished;

and (7) postbaking: placing the developed silicon wafer into an oven for third baking;

the post-baking is to improve the adhesion of the photoresist to the silicon wafer and also to improve the corrosion resistance of the photoresist film, which is helpful for maintaining good performance during chemical corrosion in the following steps.

Step (8) evaporating a metal film: and plating a metal film on the photoetched silicon wafer by adopting a plasma sputtering coating technology.

Further, the resistivity of the high-resistance silicon wafer is larger than 2000 omega cm.

Further, the first baking temperature is 90-100 ℃ and the time is 15-20 min, the second baking temperature is 110 ℃ and the time is 25-35 min, and the third baking temperature is 100 ℃ and the time is 3-5 min.

Further, the spin coating refers to dripping photoresist into the center of the silicon wafer until the photoresist is fully distributed on the whole silicon wafer, pressing a photoresist homogenizing switch of a photoresist homogenizer, homogenizing for 8s-10s under the condition of the rotating speed of 400r/min-500r/min, then increasing the rotating speed to 3500r/min-5000r/min, and continuing rotating for 25s-35s until the thickness of the photoresist is 3 μm-8 μm.

Further, the photoresist is an RFJ-210 negative photoresist.

Furthermore, the mask is square and is provided with a graphic array in the middle, the graphic array is composed of M rows and N columns of graphics, wherein 10⁴≤M≤10⁵And is an integer of 10⁴≤N≤10⁵The patterns are integers, the vertical length L1 of each pattern is in the range of 1-10 μm, the horizontal width L2 of each pattern is in the range of 1-10 μm, the transverse spacing d1 between every two patterns is in the range of 5-100 μm, and the longitudinal spacing d2 between every two patterns is in the range of 5-100 μm.

The micron three-dimensional pattern array of the electrodes is determined by a pattern array of a mask, and the pattern comprises all regular or irregular shapes such as a square, a circle, an ellipse or a triangle.

Further, the plasma sputtering coating technology comprises the following steps:

the first step is as follows: clamping the photoetched silicon wafer on a substrate table of a plasma experimental instrument, adjusting the height of the substrate table to enable the distance between the substrate table and the metal target material to be 10-15 mm, and covering a cover of a vacuum chamber;

the second step is that: sequentially turning on a main power supply, cooling water, a vacuum pump and a resistance vacuum gauge button of the plasma experimental instrument, and then turning on a direct-current sputtering knob, wherein the sputtering air inlet knob must be kept in a closed state;

the third step: when the pressure of the vacuum chamber is reduced to 10-20 Pa, a switch knob of a working gas cylinder is unscrewed, a sputtering gas inlet knob is turned on, and the sputtering gas inlet knob and a direct current sputtering knob are adjusted to stabilize the pressure of the vacuum chamber at 30-50 Pa;

the fourth step: turning on a high-voltage power switch, rotating a high-voltage adjusting coarse adjustment knob, controlling the voltage between two electrodes of a vacuum chamber to be 400V-500V, controlling the current to be 10mA-20mA, plating a metal film with the thickness of h1 on a silicon wafer according to the direct-current sputtering principle, and controlling the plating time to be 30min-50 min;

the fifth step: after the film coating is finished, firstly rotating a high-voltage adjusting coarse adjustment knob to adjust the voltage of the vacuum chamber to zero, then closing a high-voltage power switch, and then sequentially closing a sputtering air inlet knob, a direct-current sputtering knob, a resistance vacuum gauge, a vacuum pump, cooling water, a main power supply and a switch knob of a working gas cylinder;

and a sixth step: loosening an air inlet knob of the vacuum chamber, slowly filling air, taking down a cover of the vacuum chamber, taking out the silicon wafer subjected to film coating by using tweezers, and putting the silicon wafer into a sample box;

the seventh step: and (3) firstly washing the photoresist on the silicon wafer by using the photoresist solution, then washing the silicon wafer by using the deionized water, and completing the preparation of the electrode with the micron structure.

Further, the metal target comprises copper, aluminum and zinc.

Further, the working gas cylinder is an argon gas cylinder or a nitrogen gas cylinder.

Further, the thickness h1 of the metal film is 3-8 μm.

In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that:

the invention relates to a method for manufacturing an electrode with a micron structure, which fully uses a photoetching technology and a film coating technology to manufacture the electrode with the micron structure, and then uses the electrode to replace a negative electrode of the existing plasma discharge equipment. Compared with the prior art, the invention has the advantages of low manufacturing cost, simple method, simple use, mass production and the like, thereby having the prospect of large-scale popularization and application.

Drawings

In order to illustrate the embodiments of the present invention or the technical solutions in the prior art more clearly, the drawings required in the description of the embodiments or the prior art will be briefly introduced below, it is obvious that the drawings in the following description are only some examples of the present invention, and it is also possible for a person skilled in the art to obtain other drawings based on these drawings without inventive step.

FIG. 1 is a flow chart of a method of making an electrode;

FIG. 2 is a mask with a square pattern array in the middle;

FIG. 3 is a mask with rectangular pattern array in the middle;

FIG. 4 is a mask with a circular pattern array in the middle;

fig. 5 is a schematic diagram of a circuit for practical application of the electrodes.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the examples of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.