Voltage clamping circuit and system based on power MOS
阅读说明：本技术 一种基于功率mos的电压钳位电路和系统 (Voltage clamping circuit and system based on power MOS ) 是由 杜建华 周世安 刘忠汉 苏少侃 刘飞 王彬磊 赵兰 于洋 王惠 张兴国 卢焕然 于 2021-08-03 设计创作，主要内容包括：本发明公开了一种基于功率MOS的电压钳位电路和系统,该电压钳位电路包括：隔离二极管D5、MOS管Q3和控制电路；隔离二极管D5和MOS管Q3串联；控制电路与串联后的隔离二极管D5和MOS管Q3,并联接入网络A和网络B；其中,控制电路的高端接网络A,控制电路的低端接网络B；隔离二极管D5的阳极接网络A,MOS管Q3的S极接网络B。本发明解决了瞬态二极管无法承受霍尔电推进点火过程中的能量冲击而烧毁的问题。(The invention discloses a voltage clamping circuit and a system based on a power MOS, wherein the voltage clamping circuit comprises: an isolation diode D5, a MOS tube Q3 and a control circuit; the isolation diode D5 is connected with the MOS tube Q3 in series; the control circuit is connected with an isolation diode D5 and an MOS tube Q3 which are connected in series in parallel to a network A and a network B; wherein, the high end of the control circuit is connected with the network A, and the low end of the control circuit is connected with the network B; the anode of the isolation diode D5 is connected with the network A, and the S pole of the MOS transistor Q3 is connected with the network B. The invention solves the problem that the transient diode can not bear the energy impact in the Hall electric propulsion ignition process and is burnt.)
1. A power MOS based voltage clamp circuit, comprising: an isolation diode D5, a MOS tube Q3 and a control circuit;
the isolation diode D5 is connected with the MOS tube Q3 in series; wherein, the cathode of the isolation diode D5 is connected with the D pole of the MOS transistor Q3;
the control circuit is connected with an isolation diode D5 and an MOS tube Q3 which are connected in series in parallel to a network A and a network B; wherein, the high end of the control circuit is connected with the network A, and the low end is connected with the network B; the anode of the isolation diode D5 is connected with the network A, and the S pole of the MOS transistor Q3 is connected with the network B.
2. The power MOS-based voltage clamp circuit of claim 1, wherein the control circuit is configured to control the switching on and off of the MOS transistor Q3 according to a voltage signal of the clamped network to achieve clamping.
3. The power MOS-based voltage clamp of claim 2, wherein the control circuit comprises: a resistor R1, a resistor R2, a resistor R3, a resistor R4, a resistor R5, a zener diode D1, a diode D2, a zener diode D3, a diode D4, a transistor Q1 and a transistor Q2;
the diode D4 is the high end of the control circuit, the cathode of the diode D4 is connected with the cathode of the zener diode D1, one end of the resistor R3 and one end of the resistor R4 respectively;
the anode of the zener diode D1 is connected with one end of the resistor R1, and the other end of the resistor R1 is respectively connected with one end of the resistor R2, the cathode of the diode D2 and the base of the triode Q1;
the other end of the resistor R3 is connected with the collector of the triode Q1 and the base of the triode Q2;
the other end of the resistor R4, the cathode of the voltage stabilizing diode D3, the drain of the triode Q2 and one end of the resistor R5 are connected with the control end of the control circuit;
the anode of the voltage stabilizing diode D3 is connected with the anode of the diode D2;
the other end of the resistor R2, the emitter of the transistor Q1, the emitter of the transistor Q2 and the other end of the resistor R5 are connected with the low end of the control circuit.
4. The power MOS-based voltage clamp circuit of claim 3, wherein the control circuit, when controlling the MOS transistor Q3 to be turned on and off according to the voltage signal of the clamped network to realize clamping, comprises:
when V isAB＜VThreshold valueWhen the voltage is applied, the diode D1 is controlled to be cut off, and the triode Q1 is controlled to be cut off; voltage VABThe base electrode of the triode Q2 is supplied with power through a diode D4 and a resistor R3; the triode Q2 is conducted, so that the GS voltage of the MOS tube Q3 is lower than the conduction voltage of the MOS tube Q3, and the MOS tube Q3 is cut off; wherein, VThreshold valueRepresents a set clamp voltage; vABRepresenting the voltage between network a and network B, i.e. the voltage of the clamped network.
5. The power MOS-based voltage clamp circuit of claim 4, wherein the control circuit, when controlling the MOS transistor Q3 to be turned on and off according to the voltage signal of the clamped network to realize clamping, further comprises:
when V isAB≥VThreshold valueAt this time, the diode D1 is controlled to conduct and the voltage VABThe base electrode of the triode Q1 is supplied with power through a diode D4, a diode D1 and a resistor R1; the triode Q1 is conducted, so that the base voltage of the triode Q2 is lower than the conducting voltage of the triode Q2, and the triode Q2 is cut off; voltage VABThe power is supplied to the base electrode of the triode Q1 through the diode D4, the resistor R4, the diode D3 and the diode D2 so as to maintain the conduction of the triode Q1 and the cut-off of the triode Q2, and simultaneously, the voltage V is suppliedABThe G electrode of the MOS tube Q3 is supplied with power through a diode D4, a resistor R4 and a resistor R5, and the MOS tube Q3 is conducted; voltage VABThe voltage value is reduced to a voltage V by discharging through a diode D5 and an MOS tube Q3ABUntil the conduction of the MOS transistor Q3 is not maintained, so as to reduce the voltage VABLimited to a set clamp voltage.
6. The power MOS-based voltage clamp circuit according to any of claims 1-5, wherein an isolation diode D5 is used to limit the current flowing direction.
7. The power MOS-based voltage clamp circuit according to any one of claims 1-5, wherein the MOS transistor Q3 is used for switching on or off the clamped network under the control of the control circuit.
8. A power MOS-based voltage clamping system, comprising: two sets of power MOS based voltage clamp circuits as claimed in claim 1;
two sets of voltage clamping circuits based on power MOS are reversely connected in parallel to realize bidirectional clamping;
or the like, or, alternatively,
two sets of voltage clamping circuits based on power MOS are connected in series for redundancy combination so as to improve the reliability.
Technical Field
The invention belongs to the technical field of Hall electric propulsion systems, and particularly relates to a voltage clamping circuit and system based on a power MOS.
Background
In a Hall electric propulsion system, because a power supply processing unit (PPU) outputs high voltage, in order to ensure the safety of the whole satellite, the PPU outputs high voltage ground which is isolated from a satellite body; meanwhile, in order to avoid the PPU from damaging the safety of the whole satellite due to the accumulation of space charges floating on the ground relative to the whole satellite, a clamp circuit is usually required to be arranged between the high-voltage ground and the structural ground (satellite ground).
In order to realize clamping, a transient suppression diode is adopted in the conventional method, when a high-voltage ground is accumulated to a set clamping voltage point relative to a star ground floating voltage, the clamping diode quickly discharges accumulated charges in a short time, and the safety of a high-voltage product and a star is ensured.
However, for the electric propulsion system, non-electric neutralization working conditions may occur to high-energy ions ejected by the thruster at the moment of ignition between the PPU and the thruster, so that current with voltage as high as 200V, current of tens of amperes and duration of hundreds of ms occurs between the vacuum cabin and the high-voltage ground, and the transient suppression diode cannot bear transient impact and is burnt.
Disclosure of Invention
The technical problem of the invention is solved: the defects of the prior art are overcome, and a voltage clamping circuit and a system based on a power MOS are provided, aiming at solving the problem that a transient diode cannot bear energy impact in the process of Hall electric propulsion ignition and is burnt.
In order to solve the above technical problem, the present invention discloses a voltage clamping circuit based on a power MOS, comprising: an isolation diode D5, a MOS tube Q3 and a control circuit;
the isolation diode D5 is connected with the MOS tube Q3 in series; wherein, the cathode of the isolation diode D5 is connected with the D pole of the MOS transistor Q3;
the control circuit is connected with an isolation diode D5 and an MOS tube Q3 which are connected in series in parallel to a network A and a network B; wherein, the high end of the control circuit is connected with the network A, and the low end is connected with the network B; the anode of the isolation diode D5 is connected with the network A, and the S pole of the MOS transistor Q3 is connected with the network B.
In the voltage clamping circuit based on the power MOS, the control circuit is configured to control the MOS transistor Q3 to be turned on and off according to a voltage signal of the clamped network, so as to realize clamping.
In the above power MOS-based voltage clamp circuit, the control circuit includes: a resistor R1, a resistor R2, a resistor R3, a resistor R4, a resistor R5, a zener diode D1, a diode D2, a zener diode D3, a diode D4, a transistor Q1 and a transistor Q2;
the diode D4 is the high end of the control circuit, the cathode of the diode D4 is connected with the cathode of the zener diode D1, one end of the resistor R3 and one end of the resistor R4 respectively;
the anode of the zener diode D1 is connected with one end of the resistor R1, and the other end of the resistor R1 is respectively connected with one end of the resistor R2, the cathode of the diode D2 and the base of the triode Q1;
the other end of the resistor R3 is connected with the collector of the triode Q1 and the base of the triode Q2;
the other end of the resistor R4, the cathode of the voltage stabilizing diode D3, the drain of the triode Q2 and one end of the resistor R5 are connected with the control end of the control circuit;
the anode of the voltage stabilizing diode D3 is connected with the anode of the diode D2;
the other end of the resistor R2, the emitter of the transistor Q1, the emitter of the transistor Q2 and the other end of the resistor R5 are connected with the low end of the control circuit.
In the voltage clamp circuit based on the power MOS, the control circuit, when controlling the MOS transistor Q3 to be turned on and off according to the voltage signal of the clamped network, includes:
when V isAB＜VThreshold valueWhen the voltage is applied, the diode D1 is controlled to be cut off, and the triode Q1 is controlled to be cut off; voltage VABThe base electrode of the triode Q2 is supplied with power through a diode D4 and a resistor R3; the triode Q2 is conducted, so that the GS voltage of the MOS tube Q3 is lower than the conduction voltage of the MOS tube Q3, and the MOS tube Q3 is cut off; wherein, VThreshold valueRepresents a set clamp voltage; vABRepresenting the voltage between network a and network B, i.e. the voltage of the clamped network.
In the voltage clamp circuit based on the power MOS, when the control circuit controls the MOS transistor Q3 to be turned on and off according to the voltage signal of the clamped network, so as to realize clamping, the control circuit further includes:
when V isAB≥VThreshold valueAt this time, the diode D1 is controlled to conduct and the voltage VABThe base electrode of the triode Q1 is supplied with power through a diode D4, a diode D1 and a resistor R1; the triode Q1 is conducted, so that the base voltage of the triode Q2 is lower than the conducting voltage of the triode Q2, and the triode Q2 is cut off; voltage VABThe power is supplied to the base electrode of the triode Q1 through the diode D4, the resistor R4, the diode D3 and the diode D2 so as to maintain the conduction of the triode Q1 and the cut-off of the triode Q2, and simultaneously, the voltage V is suppliedABThe G electrode of the MOS tube Q3 is supplied with power through a diode D4, a resistor R4 and a resistor R5, and the MOS tube Q3 is conducted; voltage VABThe voltage value is reduced to a voltage V by discharging through a diode D5 and an MOS tube Q3ABUntil the conduction of the MOS transistor Q3 is not maintained, so as to reduce the voltage VABLimited to a set clamp voltage.
In the above-described voltage clamp circuit based on the power MOS, the diode D5 is isolated for limiting the flow direction of the current.
In the voltage clamp circuit based on the power MOS, the MOS transistor Q3 is used for switching on or off the clamped network under the control of the control circuit.
Correspondingly, the invention also discloses a voltage clamping system based on the power MOS, which comprises: two sets of voltage clamping circuits, such as those based on power MOS;
two sets of voltage clamping circuits based on power MOS are reversely connected in parallel to realize bidirectional clamping;
or the like, or, alternatively,
two sets of voltage clamping circuits based on power MOS are connected in series for redundancy combination so as to improve the reliability.
The invention has the following advantages:
the invention discloses a voltage clamping circuit based on a power MOS, which is characterized in that a control circuit detects a clamped voltage signal, and generates a clamping control signal after comparing with a set clamping voltage so as to drive the on and off of a MOS transistor Q3 to clamp: when the voltage at the two ends of the clamping network is lower than the set clamping voltage, the clamping circuit does not clamp. When the voltage at the two ends of the clamping network is higher than the set clamping voltage, the control circuit generates a clamping signal to drive the MOS tube Q3 to be conducted, so that the energy at the two ends of the clamping network is quickly released and the voltage at the two ends of the clamping network is reduced to a safe range, the purpose of clamping is achieved, and the problem that the transient diode cannot bear the energy impact in the Hall electric propulsion ignition process and is burnt is solved.
Drawings
Fig. 1 is a schematic circuit diagram of a power MOS based voltage clamp circuit according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the embodiments of the present invention will be described in detail with reference to the accompanying drawings.
As shown in fig. 1, in the present embodiment, the voltage clamp circuit based on power MOS includes: an isolation diode D5, a MOS tube Q3 and a control circuit. Specifically, the method comprises the following steps: the isolation diode D5 is connected in series with the MOS tube Q3, and the control circuit is connected in parallel with the isolation diode D5 and the MOS tube Q3 which are connected in series to the network A and the network B. Wherein, the cathode of the isolation diode D5 is connected with the D pole of the MOS transistor Q3; the high end of the control circuit is connected with the network A, and the low end of the control circuit is connected with the network B; the anode of the isolation diode D5 is connected with the network A, and the S pole of the MOS transistor Q3 is connected with the network B.
In this embodiment, the control circuit is mainly used for: according to the voltage signal of the clamped network, the MOS tube Q3 is controlled to be switched on and off to realize clamping. As shown in fig. 1, the control circuit may specifically include: resistor R1, resistor R2, resistor R3, resistor R4, resistor R5, zener diode D1, diode D2, zener diode D3, diode D4, transistor Q1 and transistor Q2. The diode D4 is a high end of the control circuit, and a cathode of the diode D4 is connected to a cathode of the zener diode D1, one end of the resistor R3, and one end of the resistor R4, respectively; the anode of the zener diode D1 is connected with one end of the resistor R1, and the other end of the resistor R1 is respectively connected with one end of the resistor R2, the cathode of the diode D2 and the base of the triode Q1; the other end of the resistor R3 is connected with the collector of the triode Q1 and the base of the triode Q2; the other end of the resistor R4, the cathode of the voltage stabilizing diode D3, the drain of the triode Q2 and one end of the resistor R5 are connected with the control end of the control circuit; the anode of the voltage stabilizing diode D3 is connected with the anode of the diode D2; the other end of the resistor R2, the emitter of the transistor Q1, the emitter of the transistor Q2 and the other end of the resistor R5 are connected with the low end of the control circuit.
In this embodiment, when the control circuit controls the MOS transistor Q3 to be turned on or off according to the voltage signal of the clamped network, the following specific implementation is implemented:
when V isAB＜VThreshold valueWhen the voltage is applied, the diode D1 is controlled to be cut off, and the triode Q1 is controlled to be cut off; voltage VABThe base electrode of the triode Q2 is supplied with power through a diode D4 and a resistor R3; the transistor Q2 is turned on, so that the GS voltage of the MOS transistor Q3 is lower than the on voltage of the MOS transistor Q3, and the MOS transistor Q3 is turned off. Wherein, VThreshold valueRepresents a set clamp voltage; vABRepresenting the voltage between network a and network B, i.e. the voltage of the clamped network.
When V isAB≥VThreshold valueAt this time, the diode D1 is controlled to conduct and the voltage VABThe base electrode of the triode Q1 is supplied with power through a diode D4, a diode D1 and a resistor R1; the triode Q1 is conducted, so that the base voltage of the triode Q2 is lower than the conducting voltage of the triode Q2, and the triode Q2 is cut off; voltage VABThe power is supplied to the base electrode of the triode Q1 through the diode D4, the resistor R4, the diode D3 and the diode D2 so as to maintain the conduction of the triode Q1 and the cut-off of the triode Q2, and simultaneously, the voltage V is suppliedABThe G electrode of the MOS tube Q3 is supplied with power through a diode D4, a resistor R4 and a resistor R5, and the MOS tube Q3 is conducted; voltage VABThe voltage value is reduced to a voltage V by discharging through a diode D5 and an MOS tube Q3ABUntil the conduction of the MOS transistor Q3 is not maintained, so as to reduce the voltage VABIs limited to setThe clamping voltage of (1).
In the present embodiment, the isolation diode D5 is mainly used to limit the flow direction of current. The MOS transistor Q3 is mainly used for switching on or off the clamped network under the control of the control circuit.
In summary, the present invention discloses a voltage clamp circuit based on a power MOS, in which a control circuit detects a clamped voltage signal, and generates a clamp control signal to drive the MOS transistor Q3 to be turned on or off after comparing the clamped voltage signal with a set clamp voltage, so as to clamp: when the voltage at the two ends of the clamping network is lower than the set clamping voltage, the clamping circuit does not clamp. When the voltage at the two ends of the clamping network is higher than the set clamping voltage, the control circuit generates a clamping signal to drive the MOS transistor Q3 to be conducted, so that the energy at the two ends of the clamping network is released quickly, the voltage at the two ends of the clamping network is reduced to a safe range, and the purpose of clamping is achieved.
In addition, the invention also discloses a voltage clamping system based on the power MOS, which comprises two sets of voltage clamping circuits based on the power MOS in the embodiment. When two sets of voltage clamping circuits based on the power MOS are reversely combined in parallel, the voltage clamping system can realize bidirectional clamping; when two sets of voltage clamping circuits based on the power MOS are connected in series and redundantly combined, the voltage clamping system has higher reliability.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to limit the present invention, and those skilled in the art can make variations and modifications of the present invention without departing from the spirit and scope of the present invention by using the methods and technical contents disclosed above.
Those skilled in the art will appreciate that the invention may be practiced without these specific details.
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