阅读说明：本技术 一种光刻曝光装置 (Photoetching exposure device ) 是由 王健 孙慧慧 于 2018-09-13 设计创作，主要内容包括：本发明实施例公开了一种光刻曝光装置,包括照明单元、投影物镜、分光单元以及至少一个光束调整单元；其中,投影物镜用于接收照明单元发出的照明光,并将照明光投射至分光单元；分光单元用于将照明光分成多束光并将多束光投射到多个曝光视场；光束调整单元位于多束光中的至少一束光的传播路径上,用于调整多束光中的至少一束光的传播路径；其中,光束调整单元包括第一反射镜以及与第一反射镜连接的可调单元,可调单元用于调整第一反射镜的位置及偏转角度。本发明的技术方案,通过增设分光单元,可以实现多个曝光视场同时曝光,提升曝光产率；通过增设光束调整单元,可以同时调整多个曝光视场的焦面,提升曝光效果。(The embodiment of the invention discloses a photoetching exposure device, which comprises an illumination unit, a projection objective, a light splitting unit and at least one light beam adjusting unit, wherein the illumination unit is used for illuminating a projection objective; the projection objective is used for receiving the illumination light emitted by the illumination unit and projecting the illumination light to the light splitting unit; the light splitting unit is used for splitting the illumination light into a plurality of beams of light and projecting the plurality of beams of light to a plurality of exposure fields; the light beam adjusting unit is positioned on the propagation path of at least one of the plurality of beams of light and is used for adjusting the propagation path of at least one of the plurality of beams of light; the light beam adjusting unit comprises a first reflecting mirror and an adjustable unit connected with the first reflecting mirror, and the adjustable unit is used for adjusting the position and the deflection angle of the first reflecting mirror. According to the technical scheme, the light splitting unit is additionally arranged, so that multiple exposure fields can be exposed simultaneously, and the exposure yield is improved; by additionally arranging the light beam adjusting unit, the focal planes of a plurality of exposure view fields can be adjusted simultaneously, and the exposure effect is improved.)

1. A photoetching exposure device is characterized by comprising an illumination unit, a projection objective, a beam splitting unit and at least one beam adjusting unit;

the projection objective is used for receiving the illumination light emitted by the illumination unit and projecting the illumination light to the light splitting unit;

the light splitting unit is used for splitting the illumination light into a plurality of beams of light and projecting the plurality of beams of light to a plurality of exposure fields;

the light beam adjusting unit is positioned on the propagation path of at least one of the plurality of beams of light and is used for adjusting the propagation path of at least one of the plurality of beams of light; the light beam adjusting unit comprises a first reflecting mirror and an adjustable unit connected with the first reflecting mirror, and the adjustable unit is used for adjusting the position and the deflection angle of the first reflecting mirror.

2. The lithographic exposure apparatus according to claim 1, wherein a transflective film is provided in the light splitting unit for splitting the illumination light into transmitted light and reflected light and projecting the transmitted light to a first exposure field and the reflected light to a second exposure field;

the photoetching exposure device also comprises a workpiece table, wherein the workpiece table is used for carrying out focusing and leveling operation on the first exposure view field;

the light beam adjusting unit is positioned on the propagation path of the reflected light and is used for adjusting the propagation path of the reflected light.

3. The lithographic exposure apparatus according to claim 1, wherein a transflective film is provided in the light splitting unit for splitting the illumination light into transmitted light and reflected light and projecting the transmitted light to a first exposure field and the reflected light to a second exposure field;

the photoetching exposure device also comprises a workpiece table, wherein the workpiece table is used for carrying out focusing and leveling operation on the second exposure view field;

the light beam adjusting unit is positioned on the transmission light propagation path and used for adjusting the transmission light propagation path.

4. Lithography exposure apparatus according to claim 1, characterized in that the adjustable unit comprises a position and angle sensor.

5. The lithographic exposure apparatus according to claim 2, further comprising a second mirror and a third mirror; the second reflector is positioned below the light splitting unit, and the center of the second reflector and the center of the light splitting unit are positioned in the same vertical direction; the center of the third reflector and the center of the second reflector are positioned in the same horizontal direction;

the second mirror is used for reflecting the transmitted light to the third mirror;

the third mirror is to project the transmitted light to the first exposure field of view.

6. The lithographic exposure apparatus according to claim 5, wherein the second mirror is a bottom mirror and the second mirror is made of a material having an abbe number opposite in polarity to that of the spectroscopic unit.

7. The lithographic exposure apparatus according to claim 5, wherein the center of the beam splitting unit and the center of the first mirror are located in the same horizontal direction and a distance between the center of the beam splitting unit and the center of the first mirror is L1, and a distance between the center of the second mirror and the center of the third mirror is L2, wherein L1 is L2;

the distance between the center of the light splitting unit and the center of the second reflector is L3, the distance between the center of the third reflector and the plane of the first exposure visual field is L4, and the distance between the center of the first reflector and the plane of the second exposure visual field is L5, wherein L5 is L3+ L4.

8. The lithographic exposure apparatus according to claim 5, wherein a distance between a center of the first exposure field and a center of the second exposure field is L6, and a projection length of the second mirror in a direction of a line connecting the centers of the first exposure field and the second exposure field is L7; wherein L6 is more than or equal to L7.

9. The lithographic exposure apparatus according to claim 5, wherein the first mirror and the third mirror are deformable mirrors.

10. The lithographic exposure apparatus according to claim 2, further comprising an optical path extending unit, located between the beam splitting unit and the beam adjusting unit, for extending the optical path of the reflected light.

11. The lithography exposure apparatus according to claim 10, wherein the distance between the center of the first exposure visual field and the center of the second exposure visual field is L6, and the projection length of the optical path extension unit in the direction of the line connecting the center of the first exposure visual field and the center of the second exposure visual field is L8, wherein L6 is ≧ L8.

12. The lithographic exposure apparatus according to claim 10, wherein the optical path lengthening unit is made of a material having an abbe number that is the same polarity as an abbe number of a material of the light splitting unit.

13. The lithographic exposure apparatus according to claim 10, wherein the optical path lengthening unit is a plate.

14. The lithographic exposure apparatus according to claim 1, wherein the illumination unit comprises at least one of a mercury lamp, an LED, or a laser.

Technical Field

The embodiment of the invention relates to the technical field of integrated circuit manufacturing, in particular to a photoetching exposure device.

Background

A projection exposure apparatus projects a circuit pattern on a mask onto a silicon wafer for manufacturing an integrated circuit at a certain magnification by performing projection exposure through an optical system such as a projection exposure lens. It is known to be used in the manufacture of integrated circuits, and in recent years this projection exposure apparatus has also been applied to the manufacture of printed circuit boards.

With the rapid development of IC manufacturing technology, the IC integration level is gradually increased, and the diameter of the silicon wafer for lithography is required to be increased to reduce the unit manufacturing cost. At present, 300mm diameter silicon wafers are gradually popularized, and 450mm diameter silicon wafers are widely adopted in the future. To ensure the timeliness of silicon wafer processing, the increase in silicon wafer size will necessitate the consideration of large field exposure systems and large size masks by lithography developers and considerations. However, the conventional exposure apparatus uses a set of projection exposure systems to project and expose an image on a mask to a field of view of a substrate material (e.g., a silicon wafer) in a scanning manner, and the exposure yield is low. The double exposure device comprises at least 2 sets of lighting systems, 2 sets of projection systems, 2 sets of silicon chips and workpiece tables, and two sets of alignment focusing systems, so that the exposure timeliness is improved, but the double exposure device is complex in structure, large in size and high in operation cost.

Disclosure of Invention

In view of this, an embodiment of the present invention provides a lithography exposure apparatus to solve the technical problem of low exposure yield in the existing lithography exposure technology.

The embodiment of the invention provides a photoetching exposure device, which comprises an illumination unit, a projection objective, a light splitting unit and at least one light beam adjusting unit, wherein the illumination unit is used for illuminating a projection objective;

the projection objective is used for receiving the illumination light emitted by the illumination unit and projecting the illumination light to the light splitting unit;

the light splitting unit is used for splitting the illumination light into a plurality of beams of light and projecting the plurality of beams of light to a plurality of exposure fields;

the light beam adjusting unit is positioned on the propagation path of at least one of the plurality of beams of light and is used for adjusting the propagation path of at least one of the plurality of beams of light; the light beam adjusting unit comprises a first reflecting mirror and an adjustable unit connected with the first reflecting mirror, and the adjustable unit is used for adjusting the position and the deflection angle of the first reflecting mirror.

Optionally, a transflective film is disposed in the light splitting unit, and is configured to split the illumination light into transmission light and reflection light, project the transmission light to a first exposure field, and project the reflection light to a second exposure field;

the photoetching exposure device also comprises a workpiece table, wherein the workpiece table is used for carrying out focusing and leveling operation on the first exposure view field;

the light beam adjusting unit is positioned on the propagation path of the reflected light and is used for adjusting the propagation path of the reflected light.

Optionally, a transflective film is disposed in the light splitting unit, and is configured to split the illumination light into transmission light and reflection light, project the transmission light to a first exposure field, and project the reflection light to a second exposure field;

the photoetching exposure device also comprises a workpiece table, wherein the workpiece table is used for carrying out focusing and leveling operation on the second exposure view field;

the light beam adjusting unit is positioned on the transmission light propagation path and used for adjusting the transmission light propagation path.

Optionally, the adjustable unit comprises position and angle sensors.

Optionally, the lithographic exposure apparatus further comprises a second mirror and a third mirror; the second reflector is positioned below the light splitting unit, and the center of the second reflector and the center of the light splitting unit are positioned in the same vertical direction; the center of the third reflector and the center of the second reflector are positioned in the same horizontal direction;

the second mirror is used for reflecting the transmitted light to the third mirror;

the third mirror is to project the transmitted light to the first exposure field of view.

Optionally, the second reflecting mirror is a bottom reflecting mirror, and the abbe number of the preparation material of the second reflecting mirror is opposite to the abbe number of the preparation material of the light splitting unit in polarity.

Optionally, the center of the light splitting unit and the center of the first mirror are located in the same horizontal direction, and a distance between the center of the light splitting unit and the center of the first mirror is L1, and a distance between the center of the second mirror and the center of the third mirror is L2, where L1 is L2;

the distance between the center of the light splitting unit and the center of the second reflector is L3, the distance between the center of the third reflector and the plane of the first exposure visual field is L4, and the distance between the center of the first reflector and the plane of the second exposure visual field is L5, wherein L5 is L3+ L4.

Optionally, a distance between a center of the first exposure visual field and a center of the second exposure visual field is L6, and a projection length of the second mirror in a line direction between the center of the first exposure visual field and the center of the second exposure visual field is L7; wherein L6 is more than or equal to L7.

Optionally, the first reflector and the third reflector are deformable reflectors.

Optionally, the lithography exposure apparatus further includes a light path extending unit, which is located between the light splitting unit and the light beam adjusting unit and is configured to extend the light path of the reflected light.

Optionally, a distance between the center of the first exposure field and the center of the second exposure field is L6, a projection length of the light path extending unit in a direction of a connection line between the center of the first exposure field and the center of the second exposure field is L8, where L6 is not less than L8.

Optionally, the dispersion coefficient of the preparation material of the optical path lengthening unit is the same as the dispersion coefficient of the preparation material of the light splitting unit in polarity.

Optionally, the optical path extending unit is a flat crystal.

Optionally, the illumination unit comprises at least one of a mercury lamp, an LED, or a laser.

According to the photoetching exposure device provided by the embodiment of the invention, the light splitting unit is used for splitting the illumination light into a plurality of beams of light and projecting the plurality of beams of light to a plurality of exposure fields, and by additionally arranging the light splitting unit, simultaneous exposure of the plurality of exposure fields can be realized, and the exposure yield of the photoetching exposure device is improved; the light beam adjusting unit is positioned on the propagation path of one of the plurality of beams of light and is used for adjusting the propagation path of one of the plurality of beams of light; the light beam adjusting unit comprises a first reflecting mirror and an adjustable unit connected with the first reflecting mirror, the adjustable unit is used for adjusting the position and the deflection angle of the first reflecting mirror, the focal planes of a plurality of exposure view fields can be adjusted simultaneously by additionally arranging the light beam adjusting unit, the confocal planes of the plurality of exposure view fields are ensured, and the exposure effect is improved.

Drawings

In order to more clearly illustrate the technical solutions of the exemplary embodiments of the present invention, a brief description is given below of the drawings used in describing the embodiments. It should be clear that the described figures are only views of some of the embodiments of the invention to be described, not all, and that for a person skilled in the art, other figures can be derived from these figures without inventive effort.

FIG. 1 is a schematic view of sequential steps of an exposure field in a lithographic exposure apparatus according to the prior art;

FIG. 2 is a schematic structural diagram of a lithography exposure apparatus according to an embodiment of the present invention;

FIG. 3 is a schematic step diagram of an exposure field in a lithographic exposure apparatus according to an embodiment of the invention;

FIG. 4 is a schematic diagram of another lithographic exposure apparatus according to an embodiment of the invention;

FIG. 5 is a schematic structural diagram of another photolithography exposure apparatus according to an embodiment of the present invention.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be fully described by the detailed description with reference to the accompanying drawings in the embodiments of the present invention. It is obvious that the described embodiments are a part of the embodiments of the present invention, not all embodiments, and all other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without inventive efforts fall within the scope of the present invention.

Fig. 1 is a schematic diagram of sequential stepping of exposure fields in a lithographic exposure apparatus in the prior art, as shown in fig. 1, a sheet of substrate material 1 can be divided into a plurality of exposure fields, and a conventional exposure apparatus scans from an exposure field F01 to exposure fields F02, F03, F04, and F05 … … in sequence, when the size of the substrate material 1 (e.g., a silicon wafer) increases, the number of fields contained in a sheet of substrate material 1 increases, the time for exposing a sheet of substrate material 1 increases, and the exposure yield is low.

Based on the above technical problem, an embodiment of the present invention provides a lithographic exposure apparatus, including an illumination unit, a projection objective, a beam splitting unit, and at least one beam adjusting unit; the projection objective is used for receiving illumination light emitted by an illumination unit and projecting the illumination light to the light splitting unit; the light splitting unit is used for splitting the illumination light into a plurality of beams of light and projecting the plurality of beams of light to a plurality of exposure fields; the light beam adjusting unit is positioned on the propagation path of at least one of the plurality of beams of light and is used for adjusting the propagation path of at least one of the plurality of beams of light; the light beam adjusting unit comprises a first reflecting mirror and an adjustable unit connected with the first reflecting mirror, and the adjustable unit is used for adjusting the position and the deflection angle of the first reflecting mirror. By adopting the technical scheme, the light splitting unit is used for splitting the illumination light into a plurality of beams of light and projecting the plurality of beams of light to a plurality of exposure fields, and the simultaneous exposure of the plurality of exposure fields can be realized by additionally arranging the light splitting unit, so that the exposure yield of the photoetching exposure device is improved; the light beam adjusting unit is positioned on the propagation path of one of the plurality of beams of light and is used for adjusting the propagation path of one of the plurality of beams of light; the light beam adjusting unit comprises a first reflecting mirror and an adjustable unit connected with the first reflecting mirror, the adjustable unit is used for adjusting the position and the deflection angle of the first reflecting mirror, the focal planes of a plurality of exposure view fields can be adjusted simultaneously by additionally arranging the light beam adjusting unit, the confocal planes of the plurality of exposure view fields are ensured, and the exposure effect is improved.

The above is the core idea of the present invention, and the technical solution in the embodiment of the present invention will be clearly and completely described below with reference to the drawings in the embodiment of the present invention. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments of the present invention without any creative work belong to the protection scope of the present invention.

Fig. 2 is a schematic structural diagram of a lithographic exposure apparatus according to an embodiment of the present invention, and as shown in fig. 2, the lithographic exposure apparatus according to an embodiment of the present invention may include an illumination unit 10, a projection objective 20, a beam splitting unit 30, and at least one beam adjusting unit 40;

the projection objective lens 20 is used for receiving the illumination light emitted by the illumination unit 10 and projecting the illumination light to the light splitting unit 30;

the light splitting unit 30 is used for splitting the illumination light into a plurality of beams of light and projecting the plurality of beams of light to a plurality of exposure fields;

the beam adjusting unit 40 is located on the propagation path of at least one of the plurality of beams of light and is used for adjusting the propagation path of at least one of the plurality of beams of light; the light beam adjusting unit 40 includes a first reflecting mirror 401 and an adjustable unit 402 connected to the first reflecting mirror 401, where the adjustable unit 402 is used to adjust the position and the deflection angle of the first reflecting mirror 401.

Illustratively, the light splitting unit 30 splits the illumination light into a plurality of beams of light and projects the plurality of beams of light to a plurality of exposure fields respectively, so that simultaneous exposure of the plurality of exposure fields can be realized, and the exposure yield of the lithography exposure device is improved. It should be noted that fig. 2 only illustrates an example in which the light splitting unit 30 splits the illumination light into two beams and projects the two beams to two exposure fields, respectively, and it is understood that the light splitting unit 30 may also split the illumination light into three beams, four beams, or more beams, which is not limited in this embodiment of the present invention.

Fig. 3 is a schematic step diagram of an exposure field in a lithographic exposure apparatus according to an embodiment of the present invention, and fig. 3 is also only illustrated by taking the example of simultaneously exposing two exposure fields. As shown in fig. 3, the lithographic exposure apparatus provided in the embodiment of the present invention can expose multiple exposure fields simultaneously, so that multiple exposure fields can be stepped each time, and compared with the case of exposing one exposure field each time as shown in fig. 1, the exposure yield of the exposure apparatus can be improved, and the exposure time of the entire substrate can be shortened. For example, when there are 92 exposure fields on the exposure substrate, it is necessary to perform 91 steps in the conventional single-field exposure, and the time required to complete the full-scale exposure is 59.5s, which is calculated by the exposure time of 0.35s for a single field and the preparation time of 0.3s for a step. In the embodiment, a plurality of exposure fields (F01-1 and F01-2, F02-1 and F02-2, F03-1 and F03-2 … in the exposure sequence) on the exposure substrate are exposed at the same time, so that the full-wafer exposure is completed by only stepping 45 times, assuming that the power of a light source is unchanged, the illumination of a single field is halved, the exposure time is increased to 0.7s, the stepping preparation time is not changed to 0.3s, the time required for completing the full-wafer exposure is 45.7s, and the exposure time is relatively reduced by 23%. Therefore, by adding the light splitting unit, the exposure yield of the exposure device can be improved, and the exposure time of the whole substrate can be shortened.

With continued reference to fig. 2, the lithography exposure apparatus according to the embodiment of the invention further includes at least one beam adjustment unit 40, and the beam adjustment unit 40 is located on the propagation path of at least one of the plurality of beams split by the splitting unit 30, and is configured to adjust the propagation path of at least one of the plurality of beams. Fig. 2 is only an exemplary illustration of the case where the lithography exposure apparatus includes one beam adjustment unit 40, and the beam adjustment unit 40 is located on a propagation path of one of the plurality of beams split by the splitting unit 30, and is used to adjust the propagation path of one of the plurality of beams. As shown in fig. 2, the light beam adjusting unit 40 may include a first mirror 401 and an adjustable unit 402 connected to the first mirror 401, wherein the adjustable unit 402 is used for adjusting the position and deflection angle of the first mirror 401. The adjustable unit 402 is used for adjusting the position and deflection angle of the first reflector 401, and the position angle of the first reflector 401 can be adjusted, so that the vertical direction and inclination condition of the exposure field corresponding to the light beam can be adjusted, and the adjustment of the exposure field is ensured.

In summary, in the photolithography exposure apparatus provided in the embodiment of the present invention, the light splitting unit splits the illumination light into multiple beams of light and projects the multiple beams of light to multiple exposure fields, and by adding the light splitting unit, simultaneous exposure of the multiple exposure fields can be realized, and the exposure yield of the photolithography exposure apparatus is improved; the light beam adjusting unit is located on a propagation path of at least one light beam of the multiple light beams and used for adjusting the propagation path of the at least one light beam of the multiple light beams, the light beam adjusting unit comprises a first reflecting mirror and an adjustable unit connected with the first reflecting mirror, the adjustable unit is used for adjusting the position and the deflection angle of the first reflecting mirror, focal planes of multiple exposure view fields can be adjusted simultaneously by additionally arranging the light beam adjusting unit, the confocal planes of the multiple exposure view fields are guaranteed, and the exposure effect is improved. Meanwhile, the photoetching exposure device provided by the embodiment of the invention has a simple structure, only the beam splitting unit and the beam adjusting unit are additionally arranged on the basis of the traditional photoetching exposure device, and the projection objective is not changed, so that the conjugate distance of the projection objective provided by the embodiment of the invention is ensured to be the same as that of the projection objective in the traditional photoetching exposure device.

Optionally, the light splitting unit 30 may implement light splitting by arranging a semi-transparent and semi-reflective film, and the light beam adjusting unit 40 may be arranged on a propagation path of the reflected light to adjust a light path of the reflected light; it may be disposed on the propagation path of the transmitted light to adjust the optical path of the transmitted light, and the above two cases will be described separately below.

First, taking the example that the light beam adjusting unit 40 is located on the propagation path of the reflected light as an example, as shown in fig. 2, a transflective film is disposed in the light splitting unit 30 for splitting the illumination light into the transmitted light and the reflected light, projecting the transmitted light to the first exposure view F01-1, and projecting the reflected light to the second exposure view F01-2; the photoetching exposure device also comprises a workpiece table 1, wherein the workpiece table 1 is used for carrying out focusing and leveling operation on the first exposure view field F01-1; the beam adjusting unit 40 is located on the propagation path of the reflected light, and adjusts the propagation path of the reflected light.

Illustratively, with continued reference to fig. 2, the light splitting unit 30 in the embodiment of the present invention may be provided with a transflective film, and the light splitting unit 30 may split the illumination light into the transmitted light and the reflected light by transmitting part of the illumination light and reflecting part of the illumination light. The light splitting unit 30 projects transmitted light to the first exposure view field F01-1, and projects reflected light to the second exposure view field F01-2, and by additionally arranging the light splitting unit 30, simultaneous exposure of the first exposure view field F01-1 and the second exposure view field F01-2 is guaranteed.

Because a photoetching exposure device may have system errors, focusing and leveling operations need to be respectively carried out on a first exposure view field F01-1 and a second exposure view field F01-2, the first exposure view field F01-1 and the second exposure view field F01-2 are both positioned on a workpiece table 1, the focusing and leveling operations of the first exposure view field F01-1 can be completed by the workpiece table 1, the first exposure view field F01-1 after the focusing operation and the leveling operation are completed is taken as a reference focal plane, the position and the deflection angle of a first reflecting mirror 401 are adjusted through an adjustable unit 402, and the vertical and the inclination conditions of the second exposure view field F01-2 are adjusted through adjusting the position angle of the first reflecting mirror 401, so that the focusing and leveling operations of the second exposure view field F01-2 are completed. The photoetching exposure device provided by the embodiment of the invention can perform focusing and leveling operations on the first exposure view field F01-1 and the second exposure view field F01-2, and ensures that the exposure effect of the first exposure view field F01-1 and the second exposure view field F01-2 is good.

Next, taking the example that the light beam adjusting unit 40 is located on the propagation path of the transmitted light, as shown in fig. 4, the light splitting unit 30 is provided with a transflective film for splitting the illumination light into transmitted light and reflected light, projecting the transmitted light to the first exposure field F01-1, and projecting the reflected light to the second exposure field F01-2; the photoetching exposure device also comprises a workpiece table 1, wherein the workpiece table 1 is used for carrying out focusing and leveling operation on the second exposure view field F01-2; the beam adjusting unit 40 is located on a propagation path of the transmitted light, and adjusts the propagation path of the transmitted light.

Illustratively, with continued reference to fig. 4, the first exposure view F01-1 and the second exposure view F01-2 are both located on the workpiece stage 1, the focusing and leveling operation of the second exposure view F01-2 can be performed by the workpiece stage 1, the focusing and leveling operation of the first exposure view F01-1 is performed by using the second exposure view F01-2 after the focusing and leveling operation is performed as a reference focal plane, adjusting the position and the deflection angle of the first mirror 401 by the adjustable unit 402, and adjusting the vertical direction and the inclination of the first exposure view F01-1 by adjusting the position and the angle of the first mirror 401. The photoetching exposure device provided by the embodiment of the invention can perform focusing and leveling operations on the first exposure view field F01-1 and the second exposure view field F01-2, and ensures that the exposure effect of the first exposure view field F01-1 and the second exposure view field F01-2 is good.

Optionally, the adjustable unit 402 may include a position and angle sensor, which may detect and adjust the position and angle of the first mirror 401 connected thereto, so as to ensure that focusing and leveling operations for the exposure field corresponding thereto are performed.

Optionally, with continued reference to fig. 2, the lithography exposure apparatus provided in the embodiment of the invention may further include a second reflecting mirror 501 and a third reflecting mirror 502, wherein the second reflecting mirror 501 is located below the light splitting unit 30, and the center of the second reflecting mirror 501 and the center of the light splitting unit 30 are located in the same vertical direction; the center of the third mirror 502 and the center of the second mirror 501 are located in the same horizontal direction; the second mirror 501 is for reflecting the transmitted light to the third mirror 502; the third mirror 502 is used to project the transmitted light to the first exposure field of view F01-1.

Illustratively, by disposing the second mirror 501 and the third mirror 502 on the propagation path of the transmitted light, it is ensured that the propagation path of the transmitted light can be adjusted.

Optionally, the second mirror 501 and the third mirror 502 are added to the transmission path of the transmitted light, and the first mirror 401 is added to the transmission path of the reflected light, so as to extend the image distance of the projection objective 20, for example, the image distance of the projection objective 20 can be increased from 50mm to 150mm by the lithography exposure apparatus provided in the embodiment of the present invention.

Alternatively, the second mirror 501 may be a bottom surface mirror, and the second mirror 501 may be made of a material having an abbe number opposite in polarity to that of the material of the spectroscopic unit 30.

Illustratively, as shown in fig. 2, since the light-splitting unit 30 splits the illumination light into the transmitted light and the reflected light, as shown in fig. 2, the transmitted light passes through the light-splitting unit 30 compared to the reflected light, and thus, there is a color difference between the transmitted light and the reflected light. In the embodiment of the present invention, the second reflecting mirror 501 is a bottom reflecting mirror, the surface of the second reflecting mirror 501 close to the light splitting unit 30 is a transmission surface, the surface far away from the light splitting unit 30 is a reflection surface, and the transmission light is reflected on the bottom surface of the second reflecting mirror 501 far away from the light splitting unit 30; meanwhile, the second reflecting mirror 501 is made of a material with an abbe coefficient opposite to that of the light splitting unit 30, for example, the light splitting unit 30 is made of a positive abbe coefficient material, and the second reflecting mirror 501 is made of a negative abbe coefficient material; or, the light splitting unit 30 is made of a negative-dispersion-coefficient material, and the second reflecting mirror 501 is made of a positive-dispersion-coefficient material, so that the transmitted light sequentially passes through the light splitting unit 30 and the second reflecting mirror 501, the dispersion coefficient of the light splitting unit 30 is opposite in polarity to the dispersion coefficient of the second reflecting mirror 501, and the chromatic aberration between the transmitted light and the reflected light can be counteracted by the light splitting unit 30 and the second reflecting mirror 501, so that the good exposure effect of the first exposure view field F01-1 and the second exposure view field F01-2 is ensured.

Alternatively, with continued reference to fig. 2, the center of the light splitting unit 30 and the center of the first mirror 401 are located in the same horizontal direction, and the distance between the center of the light splitting unit 30 and the center of the first mirror 401 is L1, and the distance between the center of the second mirror 501 and the center of the third mirror 502 is L2, where L1 is L2; the distance between the center of the light splitting unit 30 and the center of the second mirror 501 is L3, the distance between the center of the third mirror 502 and the plane where the first exposure field of view F01-1 is located is L4, and the distance between the center of the first mirror 401 and the plane where the second exposure field of view F01-2 is located is L5, wherein L5 is L3+ L4, so that the heights of the first exposure field of view F01-1 and the second exposure field of view F01-2 can be ensured to be the same, and the first exposure field of view F01-1 and the second exposure field of view F01-2 can be two different exposure fields of view on the same substrate.

Optionally, with continued reference to fig. 2, the distance between the center of the first exposure field of view F01-1 and the center of the second exposure field of view F01-2 is L6, and the projection length of the second mirror 501 in the direction of the connection line between the center of the first exposure field of view F01-1 and the center of the second exposure field of view F01-2 is L7; wherein L6 is more than or equal to L7. The distance between the center of the first exposure visual field F01-1 and the center of the second exposure visual field F01-2 is set to be greater than or equal to the projection length of the second mirror 501 in the connecting line direction between the center of the first exposure visual field F01-1 and the center of the second exposure visual field F01-2, so that the photoetching exposure device provided by the embodiment of the invention can be ensured to have the accommodating space of the second mirror 501, the second mirror 501 can be arranged in the space, and the transmission path of the transmitted light can be adjusted.

Optionally, the first reflecting mirror 401 and the third reflecting mirror 502 provided in the embodiment of the present invention are both deformable reflecting mirrors, the first reflecting mirror 401 and the third reflecting mirror 502 may actively generate surface shape changes under a stress condition, and the imaging quality of the first exposure field F01-1 and the second exposure field F01-2 may be compensated by the surface shape changes.

Fig. 5 is a schematic structural diagram of another lithography exposure apparatus provided in the embodiment of the present invention, and as shown in fig. 5, the lithography exposure apparatus provided in the embodiment of the present invention may further include an optical path extending unit 60, where the optical path extending unit 60 is located between the light splitting unit 30 and the light beam adjusting unit 40, and is used for extending the optical path of the reflected light.

For example, the transmitted light generated by the beam splitting unit 30 is directly projected to the first exposure field F01-1, and the reflected light generated by the beam splitting unit 30 is projected to the second exposure field F01-2 after passing through the beam adjusting unit 40, in order to ensure that the first exposure field F01-1 and the second exposure field F01-2 are simultaneously exposed, the optical path of the reflected light needs to be increased, the reflected light can reach the second exposure field F01-2, and the time for the light beam to go through the portion where the optical path of the reflected light is more than that of the transmitted light is only about 1.3 × 10^-10s, negligible, i.e., the first exposure field F01-1 and the second exposure field F01-2 can be considered to be simultaneously exposed. In the embodiment of the present invention, the light path extending unit 60 is additionally disposed between the light splitting unit 30 and the light beam adjusting unit 40, and the refractive index of the light path extending unit 60 is greater than that of air, so that the light path extending unit 60 is additionally disposed between the light splitting unit 30 and the light beam adjusting unit 40, and the transmitted light and the reflected light can be ensured to be projected to the second position at the same timeThe first exposure view field F01-1 and the second exposure view field F01-2 ensure that the photoetching exposure device provided by the embodiment of the invention can realize simultaneous exposure of multiple exposure view fields.

Optionally, a distance between the center of the first exposure visual field F01-1 and the center of the second exposure visual field F01-2 is L6, and a projection length of the light path extending unit 60 in a direction of a connection line between the center of the first exposure visual field F01-1 and the center of the second exposure visual field F01-2 is L8, where L6 is greater than or equal to L8. The distance between the center of the first exposure visual field F01-1 and the center of the second exposure visual field F01-2 is set to be greater than or equal to the projection length of the light path extension unit 60 in the connecting line direction between the center of the first exposure visual field F01-1 and the center of the second exposure visual field F01-2, so that the photoetching exposure device provided by the embodiment of the invention can be ensured to have the accommodating space of the light path extension unit 60, the light path extension unit 60 can be arranged in a space, the optical path of reflected light can be extended, and the first exposure visual field F01-1 and the second exposure visual field F01-2 can be simultaneously exposed.

Alternatively, since the light-splitting unit 30 splits the illumination light into the transmitted light and the reflected light, as shown in fig. 5, the transmitted light passes through the light-splitting unit 30 as compared with the reflected light, and thus, there is a color difference between the transmitted light and the reflected light. In the embodiment of the present invention, the reflected light is set to pass through the light path extending unit 60; meanwhile, the dispersion coefficient of the preparation material of the optical path lengthening unit 60 is set to be communicated with the polarity of the dispersion coefficient of the preparation material of the light splitting unit 30, for example, the preparation material of the light splitting unit 30 is set to be a positive dispersion coefficient material, and the preparation material of the optical path lengthening unit 60 is set to be a positive dispersion coefficient material; or, the preparation material of the light splitting unit 30 is a negative dispersion coefficient material, and the preparation material of the light path extending unit 60 is a negative dispersion coefficient material, so that the transmitted light passes through the light splitting unit 30, the reflected light passes through the light path extending unit 60, and the dispersion coefficient of the preparation material of the light splitting unit 30 is communicated with the polarity of the dispersion coefficient of the preparation material of the light path extending unit 60, so that the chromatic aberration between the transmitted light and the reflected light can be offset by the light splitting unit 30 and the light path extending unit 60, and the good exposure effect of the first exposure view field F01-1 and the second exposure view field F01-2 is ensured.

Alternatively, the optical path lengthening unit 60 may be a flat crystal.

Alternatively, the illumination unit 10 may include at least one of a mercury lamp, an LED, or a laser.

It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious modifications, rearrangements, combinations and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.