Combined sensor and manufacturing method thereof
阅读说明:本技术 组合传感器及其制作方法 (Combined sensor and manufacturing method thereof ) 是由 邱文瑞 于 2019-11-13 设计创作,主要内容包括:本发明公开一种组合传感器及其制作方法。其中,所述所述组合传感器包括第一晶圆片、第二晶圆片及多个传感器,所述第一晶圆片和所述第二晶圆片键合连接,并围合形成相互独立的多个所述传感器,相邻两个所述传感器之间设置有一电隔离结构。本发明的技术方案能够提供一个小型化、集成化且电磁干扰较小的组合传感器。(The invention discloses a combined sensor and a manufacturing method thereof. The combined sensor comprises a first wafer, a second wafer and a plurality of sensors, wherein the first wafer and the second wafer are connected in a bonding mode and enclose to form a plurality of mutually independent sensors, and an electric isolation structure is arranged between every two adjacent sensors. The technical scheme of the invention can provide a small-sized and integrated combined sensor with small electromagnetic interference.)
1. The combined sensor is characterized by comprising a first wafer, a second wafer and a plurality of sensors, wherein the first wafer and the second wafer are connected in a bonding mode and enclose to form a plurality of mutually independent sensors, and an electric isolation structure is arranged between every two adjacent sensors.
2. The combination sensor of claim 1, wherein the combination sensor comprises at least two of an inertial sensor, a humidity sensor, an air pressure sensor, and a temperature sensor.
3. The combination sensor of claim 1, wherein the first wafer and the second wafer each comprise two silicon dioxide layers and a silicon layer, the silicon layer being disposed between the two silicon dioxide layers, the electrically isolating structure being disposed through at least the two silicon dioxide layers opposite the first wafer and the second wafer.
4. A combination sensor as claimed in any of claims 1 to 3, wherein one of the first and second wafers is provided with a gold-bonded encapsulation layer and the other is provided with a tin-bonded encapsulation layer, the gold-bonded encapsulation layer being bonded to the tin-bonded encapsulation layer.
5. A method for manufacturing a combined sensor is characterized by comprising the following steps:
providing a first wafer and a second wafer;
etching the first wafer and the second wafer respectively to obtain a plurality of sensor structures;
etching the first wafer and the second wafer respectively to obtain a plurality of electric isolation structures, wherein one electric isolation structure is positioned between two adjacent sensor structures;
and aligning, bonding and packaging the first wafer and the second wafer by adopting a bonding process to obtain the combined sensor.
6. The method for manufacturing a combinational sensor as described in claim 5, wherein the step of performing aligned bonding packaging of the first wafer and the second wafer by using a bonding process comprises:
carrying out patterned metalized electro-gold plating on the surface of the first wafer to obtain a gold bonding packaging layer;
carrying out patterned metallization electrolytic tinning on the surface of the second wafer to obtain a tin bonding packaging layer;
and aligning and bonding the gold bonding packaging layer and the tin bonding packaging layer for packaging.
7. The method of claim 5, wherein the plurality of sensor structures include an inertial sensor structure, a humidity sensor structure, an air pressure sensor structure, and a temperature sensor structure.
8. The method of fabricating a combi-sensor according to claim 7, wherein the inertial sensor structure is fabricated by the steps of:
performing graphical deposition operation on the surfaces of the first wafer and the second wafer respectively to obtain two first electrode layers;
and respectively etching the first wafer and the second wafer to respectively obtain two oscillator structures, wherein the oscillator structures are positioned between the two first electrode layers.
9. The method of fabricating a combi-sensor according to claim 7, wherein the humidity sensor structure is fabricated by the steps of:
performing graphical deposition operation on the surfaces of the first wafer and the second wafer respectively to obtain two second electrode layers;
performing graphical deposition operation on the surface of the first wafer to obtain a first dielectric strain layer, wherein the first dielectric strain layer is positioned between the two second electrode layers, and a third electrode layer is deposited on the surface of the first dielectric strain layer, which is opposite to the first wafer;
depositing and corroding a humidity-sensitive material on the surface of the third electrode layer, which faces away from the first dielectric strain layer, so as to obtain a humidity-sensitive layer;
and etching the surface of the second wafer, which faces away from the sensor structure, to obtain a first sensing channel, wherein the first sensing channel penetrates through the second wafer and corresponds to the humidity sensing layer.
10. The method of fabricating a combi-sensor according to claim 7, wherein the air pressure sensor structure is fabricated by the steps of:
performing graphical deposition operation on the surfaces of the first wafer and the second wafer respectively to obtain two fourth electrode layers;
respectively carrying out patterned deposition operation on the surfaces of the first wafer and the second wafer to respectively obtain second dielectric strain layers, wherein the second dielectric strain layers are positioned between the two fourth electrode layers, and a fifth electrode layer is deposited on the surface of each dielectric strain layer;
and etching the surface of the second wafer, which faces away from the sensor structure, to obtain a second induction channel, wherein the second induction channel corresponds to the second dielectric strain layer.
11. The method of fabricating a combi-sensor according to claim 7, wherein the temperature sensor structure is fabricated by the steps of:
performing graphical deposition operation on the surfaces of the first wafer and the second wafer respectively to obtain two sixth electrode layers;
etching the first wafer to obtain a temperature sensor cavity, wherein the temperature sensor cavity is located between the two sixth electrode layers, and conductive particles are injected into the temperature sensor cavity;
performing patterned deposition operation on the surface of the second wafer to obtain a third dielectric strain layer, wherein the third dielectric strain layer is positioned between the two sixth electrode layers, and a seventh electrode layer is deposited on the surface of the third dielectric strain layer;
and etching the surface of the second wafer, which faces away from the sensor structure, to obtain a third sensing channel, wherein the third sensing channel penetrates through the second wafer.
Technical Field
The invention relates to the technical field of sensors, in particular to a combined sensor and a manufacturing method thereof.
Background
Disclosure of Invention
The invention mainly aims to provide a combined sensor and a manufacturing method thereof, and aims to provide a combined sensor which is miniaturized and integrated and has small electromagnetic interference.
In order to achieve the above purpose, the combined sensor provided by the present invention includes a first wafer, a second wafer, and a plurality of sensors, wherein the first wafer and the second wafer are bonded and connected and enclose to form a plurality of mutually independent sensors, and an electrical isolation structure is disposed between two adjacent sensors.
Optionally, the combination sensor comprises at least two of an inertial sensor, a humidity sensor, an air pressure sensor, and a temperature sensor.
Optionally, the first wafer and the second wafer each include two silicon dioxide layers and a silicon layer, the silicon layer is disposed between the two silicon dioxide layers, and the electrical isolation structure is disposed through at least two silicon dioxide layers opposite to the first wafer and the second wafer.
Optionally, one of the first wafer and the second wafer is provided with a gold bonding encapsulation layer, and the other wafer is provided with a tin bonding encapsulation layer, and the gold bonding encapsulation layer is in bonding connection with the tin bonding encapsulation layer.
The invention also provides a manufacturing method of the combined sensor, which comprises the following steps:
providing a first wafer and a second wafer;
etching the first wafer and the second wafer respectively to obtain a plurality of sensor structures;
etching the first wafer and the second wafer respectively to obtain a plurality of electric isolation structures, wherein one electric isolation structure is positioned between two adjacent sensor structures;
and aligning, bonding and packaging the first wafer and the second wafer by adopting a bonding process to obtain the combined sensor.
Optionally, in the step of performing aligned bonding packaging on the first wafer and the second wafer by using a bonding process, the step includes:
carrying out patterned metalized electro-gold plating on the surface of the first wafer to obtain a gold bonding packaging layer;
carrying out patterned metallization electrolytic tinning on the surface of the second wafer to obtain a tin bonding packaging layer;
and aligning and bonding the gold bonding packaging layer and the tin bonding packaging layer for packaging.
Optionally, the plurality of sensor structures includes an inertial sensor structure, a humidity sensor structure, an air pressure sensor structure, and a temperature sensor structure.
Optionally, the inertial sensor structure is manufactured by the following steps:
performing graphical deposition operation on the surfaces of the first wafer and the second wafer respectively to obtain two first electrode layers;
and respectively etching the first wafer and the second wafer to respectively obtain two oscillator structures, wherein the oscillator structures are positioned between the two first electrode layers.
Optionally, the humidity sensor structure is manufactured by the following steps:
performing graphical deposition operation on the surfaces of the first wafer and the second wafer respectively to obtain two second electrode layers;
performing graphical deposition operation on the surface of the first wafer to obtain a first dielectric strain layer, wherein the first dielectric strain layer is positioned between the two second electrode layers, and a third electrode layer is deposited on the surface of the first dielectric strain layer, which is opposite to the first wafer;
depositing and corroding a humidity-sensitive material on the surface of the third electrode layer, which faces away from the first dielectric strain layer, so as to obtain a humidity-sensitive layer;
and etching the surface of the second wafer, which faces away from the sensor structure, to obtain a first sensing channel, wherein the first sensing channel penetrates through the second wafer and corresponds to the humidity sensing layer.
Optionally, the air pressure sensor structure is manufactured by the following steps:
performing graphical deposition operation on the surfaces of the first wafer and the second wafer respectively to obtain two fourth electrode layers;
respectively carrying out patterned deposition operation on the surfaces of the first wafer and the second wafer to respectively obtain second dielectric strain layers, wherein the second dielectric strain layers are positioned between the two fourth electrode layers, and a fifth electrode layer is deposited on the surface of each dielectric strain layer;
and etching the surface of the second wafer, which faces away from the sensor structure, to obtain a second induction channel, wherein the second induction channel corresponds to the second dielectric strain layer.
Optionally, the temperature sensor structure is manufactured by the following steps:
performing graphical deposition operation on the surfaces of the first wafer and the second wafer respectively to obtain two sixth electrode layers;
etching the first wafer to obtain a temperature sensor cavity, wherein the temperature sensor cavity is located between the two sixth electrode layers, and conductive particles are injected into the temperature sensor cavity;
performing patterned deposition operation on the surface of the second wafer to obtain a third dielectric strain layer, wherein the third dielectric strain layer is positioned between the two sixth electrode layers, and a seventh electrode layer is deposited on the surface of the third dielectric strain layer;
and etching the surface of the second wafer, which faces away from the sensor structure, to obtain a third sensing channel, wherein the third sensing channel penetrates through the second wafer.
According to the technical scheme, the first wafer and the second wafer are connected in a bonding mode and are surrounded to form a plurality of mutually independent sensors, and an electric isolation structure is arranged between every two adjacent sensors. Since the combined sensor of the present invention is fabricated on two wafer level wafer structures, miniaturization and integration can be achieved. And, a plurality of sensors are independent of each other and shielded from each other by the electrical isolation structure, so that the anti-electromagnetic interference capability of the sensors can be improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic cross-sectional view of an embodiment of a combinational sensor in accordance with the present invention;
FIG. 2 is a partial cross-sectional structural view of a combi sensor;
FIG. 3 is another schematic view, partly in section, of the construction of the combi-sensor;
FIG. 4 is a schematic flow chart illustrating steps of a method for fabricating a combinational sensor according to an embodiment of the present invention;
FIG. 5 is a detailed flowchart of step S40 in FIG. 4;
FIG. 6 is a schematic flow chart illustrating steps for fabricating an inertial sensor structure;
FIG. 7 is a flow chart illustrating the steps for fabricating a humidity sensor structure;
FIG. 8 is a flow chart illustrating steps for fabricating a structure of an air pressure sensor;
FIG. 9 is a schematic flow chart illustrating the steps for fabricating a temperature sensor structure; .
The reference numbers illustrate:
the implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that all the directional indicators (such as up, down, left, right, front, and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the movement situation, etc. in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indicator is changed accordingly.
In addition, the descriptions related to "first", "second", etc. in the present invention are only for descriptive purposes and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "connected," "secured," and the like are to be construed broadly, and for example, "secured" may be a fixed connection, a removable connection, or an integral part; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In addition, the technical solutions in the embodiments of the present invention may be combined with each other, but it must be based on the realization of those skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination of technical solutions should not be considered to exist, and is not within the protection scope of the present invention.
The present invention provides a combinational sensor 100.
Referring to fig. 1 to 3, in an embodiment of the combinational sensor 100 of the present invention, the combinational sensor 100 includes a
Here, the
Therefore, it can be understood that, in the solution of the present invention, the
Optionally, the combination sensor 100 includes at least two of the inertial sensor 40, the humidity sensor 50, the air pressure sensor 60, and the temperature sensor 70.
Here, the inertial sensor 40 is mainly used to detect acceleration, tilt, shock, vibration, rotation, and multiple degrees of freedom motion. The humidity sensor 50 is mainly used to detect the humidity of air, the air pressure sensor 60 is used to detect the atmospheric pressure, and the temperature sensor 70 is used to detect the temperature. The combination sensor 100 may be two, three, or four combinations thereof.
Alternatively, where the combination sensor 100 is a combination of the inertial sensor 40, the humidity sensor 50, the air pressure sensor 60, and the temperature sensor 70, multiple functions of simultaneously detecting acceleration, humidity, air pressure, and temperature can be realized.
Optionally, the
In an embodiment of the present invention, one of the
Here, the
The present invention also provides a method for manufacturing the combinational sensor 100, which is used for manufacturing the combinational sensor 100 as described above.
Referring to fig. 4, in an embodiment of the combinational sensor 100 according to the present invention, a method for manufacturing the combinational sensor 100 includes the following steps:
s10, providing a
s20, etching the
s30, etching the
and S40, performing alignment bonding packaging on the
Here, the
Here, the electrical isolation structure 30 is mainly manufactured by the following steps: the
Further, referring to fig. 5, in step S40, the method includes:
s401, performing patterned metalized electro-gold plating on the surface of the
s402, carrying out patterned metallization electrolytic tinning on the surface of the
and S403, aligning and bonding the gold
Here, the
In one embodiment of the present invention, the plurality of sensor structures includes an inertial sensor 40 structure, a humidity sensor 50 structure, an air pressure sensor 60 structure, and a temperature sensor 70 structure.
Here, the plurality of sensor structures include an inertial sensor 40 structure, a humidity sensor 50 structure, an air pressure sensor 60 structure, and a temperature sensor 70 structure, so that the finally manufactured combined sensor 100 is a combination of the four sensors, i.e., a multifunctional integrated sensor, and can realize multiple functions of simultaneously detecting acceleration, humidity, air pressure, and temperature.
In an embodiment of the present invention, referring to fig. 6, the structure of the inertial sensor 40 is manufactured by the following steps:
step S211, performing patterned deposition on the surfaces of the
in step S212, the
Specifically, first, a pattern deposition is performed on the surface of the
In an embodiment of the present invention, referring to fig. 7, the humidity sensor 50 is manufactured by the following steps:
step S221, performing patterned deposition operations on the surfaces of the
step S222, performing a patterned deposition operation on the surface of the
step S223, depositing and etching a humidity sensitive material on the surface of the
step S224, etching the surface of the
Specifically, firstly, pattern deposition is performed on the surface of the
In an embodiment of the present invention, referring to fig. 8, the air pressure sensor 60 is manufactured by the following steps:
step S231, performing patterning deposition operations on the surfaces of the
step S232, performing patterned deposition on the surfaces of the
in step S233, etching is performed on the surface of the
Specifically, firstly, pattern deposition is performed on the surface of the
In an embodiment of the present invention, referring to fig. 9, the structure of the temperature sensor 70 is manufactured by the following steps:
step S241 of performing a patterned deposition operation on the surfaces of the
Step S242, etching the
step S243, performing a patterned deposition operation on the surface of the
in step S244, etching is performed on the surface of the
Specifically, firstly, pattern deposition is performed on the surface of the
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.
- 上一篇:一种医用注射器针头装配设备
- 下一篇:一种微型螺旋结构制造方法及其制造装置