阅读说明：本技术 一种氮化钽薄膜的制备方法 (Preparation method of tantalum nitride film ) 是由 不公告发明人 于 2019-10-25 设计创作，主要内容包括：一种氮化钽薄膜的制备方法,包括：通过氩离子束轰击金属钽靶,获得金属样品；通过氮离子束轰击所述金属样品,沉积获得氮化钽薄膜层；通过热处理所述氮化钽薄膜层,获得氮化钽薄膜电阻。本申请所提供的氮化钽薄膜电阻的制备方法所获得的氮化钽薄膜电阻,与基底附着良好、具有较小电阻温度系数TCR,且具有长时间老化电阻变化率(ACR)约0.01％的高稳定性。(A method for preparing a tantalum nitride film comprises the following steps: bombarding a metal tantalum target by an argon ion beam to obtain a metal sample; bombarding the metal sample by nitrogen ion beams, and depositing to obtain a tantalum nitride thin film layer; and obtaining the tantalum nitride film resistor by heat treatment of the tantalum nitride film layer. The tantalum nitride film resistor obtained by the preparation method of the tantalum nitride film resistor is well adhered to a substrate, has a smaller temperature coefficient TCR of resistance, and has high stability of about 0.01% of resistance change rate (ACR) after long-time aging.)

1. A method for preparing a tantalum nitride film is characterized by comprising the following steps:

bombarding a metal tantalum target by an argon ion beam to obtain a metal sample;

bombarding the metal sample by nitrogen ion beams, and depositing to obtain a tantalum nitride thin film layer;

and obtaining the tantalum nitride film resistor by heat treatment of the tantalum nitride film layer.

2. The method of claim 1, wherein a ratio of a flow rate of nitrogen in the nitrogen ion beam to a flow rate of argon in the argon ion beam is 5% to 15%.

3. The method of claim 2, wherein the argon ion beam is emitted by a Kaffman focused grid ion source.

4. The method of claim 3, wherein said nitrogen ion beam is emitted by a Kaffman parallel grid ion source.

5. The method according to claim 4, wherein the anode voltage of the Kaufman focus grid ion source is 45V-60V, and the cathode current is 5A-8A.

6. The method for preparing a tantalum nitride film according to claim 5, wherein the voltage of a screen grid of the Kaufman focused grid ion source is 800V-1200V, the beam current is 80 mA-120 mA, and the acceleration voltage is 100V-300V.

7. The method of claim 6, wherein the background vacuum degree of the Kaufman focused gate ion source is less than 1.0 x 10 < -4 > Pa, and the working gas pressure is 1.0 x 10 < -2 > Pa to 2.5 x 10 < -2 > Pa.

8. The method according to claim 7, wherein the ion source has an anode voltage of 45V to 60V, a cathode current of 5A to 8A, a screen grid voltage of 100V to 300V, a beam current of 20mA to 50mA, and an acceleration voltage of 100V to 300V.

9. The method of claim 8, wherein the background vacuum degree of the ion source is less than 1.0 x 10 "4 Pa, and the working pressure is 1.0 x 10" 2Pa to 2.5 x 10 "2 Pa.

10. The method of claim 9, wherein heat treating the tantalum nitride thin film layer comprises: heating to 350-550 ℃ in the mixed gas atmosphere of nitrogen and oxygen, and preserving the heat for 60-90 min.

Technical Field

The application relates to the field of electronic element manufacturing, in particular to a preparation method of a tantalum nitride film.

Background

The traditional tantalum nitride resistor has poor adhesion with a substrate, a large temperature coefficient of resistance TCR and is easy to age after long-time use.

Disclosure of Invention

The main objective of the present application is to provide a method for preparing a tantalum nitride film, comprising:

bombarding a metal tantalum target by an argon ion beam to obtain a metal sample;

bombarding the metal sample by nitrogen ion beams, and depositing to obtain a tantalum nitride thin film layer;

and obtaining the tantalum nitride film resistor by heat treatment of the tantalum nitride film layer.

Optionally, a flow ratio of a flow of nitrogen gas in the nitrogen ion beam to a flow of argon gas in the argon ion beam is 5% -15%.

Optionally, the argon ion beam is emitted by a kaffman focused grid ion source.

Optionally, the nitrogen ion beam is emitted by a kaffman parallel grid ion source.

Optionally, the anode voltage of the kaufman focus grid ion source is 45V to 60V, and the cathode current is 5A to 8A.

Optionally, the screen grid voltage of the Kaufman focused grid ion source is 800V-1200V, the beam current is 80 mA-120 mA, and the acceleration voltage is 100V-300V.

Optionally, the background vacuum degree of the Kaufman focusing grid ion source is less than 1.0 × 10-4Pa, and the working air pressure is 1.0 × 10-2 Pa-2.5 × 10-2 Pa.

Optionally, the anode voltage of the Kaffman parallel grid ion source is 45V-60V, the cathode current is 5A-8A, the screen grid voltage is 100V-300V, the beam current is 20 mA-50 mA, and the acceleration voltage is 100V-300V.

Optionally, the background vacuum degree of the Kaffman parallel gate ion source is less than 1.0 × 10-4Pa, and the working air pressure is 1.0 × 10-2 Pa-2.5 × 10-2 Pa.

Optionally, heat treating the tantalum nitride thin film layer comprises: heating to 350-550 ℃ in the mixed gas atmosphere of nitrogen and oxygen, and preserving the heat for 60-90 min.

The tantalum nitride film resistor obtained by the preparation method of the tantalum nitride film resistor is well adhered to a substrate, has a smaller temperature coefficient TCR of resistance, and has high stability of about 0.01% of resistance change rate (ACR) after long-time aging.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this application, serve to provide a further understanding of the application and to enable other features, objects, and advantages of the application to be more apparent. The drawings and their description illustrate the embodiments of the invention and do not limit it. In the drawings:

FIG. 1 is a schematic flow chart of a method for forming a tantalum nitride film according to one embodiment of the present application.

Detailed Description

In order to make the technical solutions better understood by those skilled in the art, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only partial embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

It should be noted that the terms "comprises" and "comprising," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.

Furthermore, the terms "mounted," "disposed," "provided," "connected," and "sleeved" are to be construed broadly. For example, it may be a fixed connection, a removable connection, or a unitary construction; can be a mechanical connection, or an electrical connection; may be directly connected, or indirectly connected through intervening media, or may be in internal communication between two devices, elements or components. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.

It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present application will be described in detail below with reference to the embodiments with reference to the attached drawings.

As shown in fig. 1, an embodiment of the present application provides a method for preparing a tantalum nitride film, including:

s2: bombarding a metal tantalum target by an argon ion beam to obtain a metal sample;

s4: bombarding the metal sample by nitrogen ion beams, and depositing to obtain a tantalum nitride thin film layer;

s6: and obtaining the tantalum nitride film resistor by heat treatment of the tantalum nitride film layer.

In an embodiment of the present application, a flow ratio of a nitrogen gas flow rate in the nitrogen ion beam to an argon gas flow rate in the argon ion beam is 5% to 15%.

In one embodiment of the present application, the argon ion beam is emitted by a kaffman focused grid ion source.

In one embodiment of the present application, the nitrogen ion beam is emitted by a Kaffman parallel grid ion source.

In one embodiment of the present application, the anode voltage of the kaufman focus grid ion source is 45V to 60V, and the cathode current is 5A to 8A.

In an embodiment of the application, the voltage of a screen grid of the Kaffman focusing grid ion source is 800V-1200V, the beam current is 80 mA-120 mA, and the accelerating voltage is 100V-300V.

In one embodiment of the present application, the background vacuum of the Kaffman focus grid ion source is less than 1.0 × 10 ^-4Pa, working pressure of 1.0X 10 ^-2Pa～2.5×10 ^-2Pa。

In an embodiment of the application, the anode voltage of the Kaffman parallel grid ion source is 45V-60V, the cathode current is 5A-8A, the screen grid voltage is 100V-300V, the beam current is 20 mA-50 mA, and the acceleration voltage is 100V-300V.

In one embodiment of the present application, the background vacuum of the Kaffman parallel gate ion source is less than 1.0 × 10 ^-4Pa, working pressure of 1.0X 10 ^-2Pa～2.5×10 ^-2Pa。

In one embodiment of the present application, the heat treating the tantalum nitride thin film layer comprises: heating to 350-550 ℃ in the mixed gas atmosphere of nitrogen and oxygen, and preserving the heat for 60-90 min.

In the application, a focusing grid Kaffman ion source is adopted to emit argon ion beams to bombard a metal tantalum target, an auxiliary parallel grid ion source emits nitrogen ion beams to carry out reaction bombardment on a sample to prepare a tantalum nitride (TaN) film layer, and the tantalum nitride film layer is subjected to heat treatment, so that a high-stability TaN film resistor which is well attached to a substrate, has a small resistance temperature coefficient TCR and has a long-time aging resistance change rate (ACR) of about 0.01% can be obtained. The film can be applied to a sputtering film resistor and a strain film of a sputtering film pressure sensor. The components of the strain film of the sputtered film resistor and the sputtered film pressure sensor are TaN x, wherein x is 0.1-1 film. The thickness of the film is 100 nm-300 nm.

The tantalum nitride film resistor obtained by the preparation method of the tantalum nitride film resistor is well adhered to a substrate, has a smaller temperature coefficient TCR of resistance, and has high stability of about 0.01% of resistance change rate (ACR) after long-time aging.

The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.