阅读说明：本技术 一种基于垂直腔半导体光放大器的低功耗光学突触装置 (Low-power-consumption optical synapse device based on vertical cavity semiconductor optical amplifier ) 是由 项水英 张雅慧 龚俊楷 于 2018-08-01 设计创作，主要内容包括：本发明公开了基于垂直腔半导体光放大器的低功耗光学突触装置。该发明属于光信息处理技术领域,主要应用于光子脉冲神经网络的构建。所述的装置如附图所示,包括两个垂直腔面发射半导体激光器VCSEL1,VCSEL2,可调光延时线VODL,两个光耦合器OC1,OC2,三端口光环型器Circulator,垂直腔半导体光放大器VCSOA,为垂直腔半导体光放大器提供偏置电流和温度控制的Bias and TEC,两个带通滤波器λ<Sub>1</Sub>,λ<Sub>2</Sub>。通过VCSEL输出的光脉冲注入到VCSOA中,证明VCSOA具有实现光学突触的功能。本发明装置在保证了实现光学突触功能的情况下,功耗低,并且对输入信号的输入功率要求低,时间窗口调谐范围大。(The invention discloses a low-power-consumption optical synapse device based on a vertical cavity semiconductor optical amplifier. The invention belongs to the technical field of optical information processing, and is mainly applied to construction of a photon pulse neural network. The device is shown in the attached drawing and comprises two vertical cavity surface emitting semiconductor lasers VCSELs 1, a VCSEL2, an adjustable light delay line VODL, two optical couplers OC1 and OC2, a three-port optical Circulator, a vertical cavity semiconductor optical amplifier VCSOA, a Bias and TEC for providing Bias current and temperature control for the vertical cavity semiconductor optical amplifier, and two band-pass filters lambda 1 ，λ 2 . The optical pulse output by the VCSEL is injected into the VCSOA, and the VCSOA is proved to have the function of realizing optical synapse. The device has low power consumption, low requirement on the input power of the input signal and large tuning range of the time window under the condition of ensuring the realization of the optical synapse function.)

1. A low-power-consumption optical synapse device based on a vertical cavity semiconductor optical amplifier comprises two vertical cavity surface emitting semiconductor lasers VCSELs 1, a VCSEL2, an adjustable optical delay line VODL, two optical couplers OC1 and OC2, a three-port optical Circulator, a vertical cavity semiconductor optical amplifier VCSOA, a Bias and TEC for providing Bias current and temperature control for the vertical cavity semiconductor optical amplifier, and two band-pass filters lambda₁，λ₂Wherein the output of the VCSE1 is connected to an input of the OC 1; the output terminal of the VCSEL2 is connected to the input terminal of the VODL; the output terminal of the VODL is connected with the other input terminal of the OC 1; the output end of OC1 is connected with the 1 port of circular; the 2 port of the circular is connected with the VCSOA; the 3 port of the circular is connected with the input end of OC 2; two output terminals of OC2 are respectively connected withλ₁，λ₂The input ends of the two are connected; the Bias and TEC is connected with the VCSOA; lambda [ alpha ]₁，λ₂The output end of the voltage regulator is connected with an oscilloscope for testing through a photoelectric detector.

2. The optical synapse device with low power consumption based on vertical cavity semiconductor optical amplifier as claimed in claim 1, wherein the VCSELs 1, 2 output one optical pulse respectively; wherein the optical pulses output by the VCSEL2 are time-shifted between the VODL and the optical pulses output by the VCSEL 1; two optical pulses are injected into the VCSOA through OC1, circulation; two optical pulses after the action of VCSOA pass through circulation, OC2, lambda₁，λ₂Respectively outputting; by adjusting the VODL, the pulse-time dependent synaptic plasticity of the optical domain can be observed.

3. The vertical cavity semiconductor optical amplifier based low power optical synapse arrangement of claim 1, in which the optical synapse is implemented with a VCSOA.

4. The optical synapse device with low power consumption based on the vertical cavity semiconductor optical amplifier of claim 1, wherein the optical synapse device with low power consumption can work by providing a bias current of 0.5-0.64 mA for the VCSOA; the required input optical signal is small and only microwatts are needed to work.

5. The vertical cavity semiconductor optical amplifier based low power optical synapse device of claim 1, wherein the wide-range tuning, continuous tuning time range is-1500 ps to 1500 ps.

Technical Field

A low-power-consumption optical synapse device based on a vertical cavity semiconductor optical amplifier belongs to the technical field of optical information processing, and particularly relates to a method for realizing low-power-consumption optical synapse.

Background

Compared with the traditional von Neumann system, the photon neuromorphic calculation combines the characteristics of photonics and brain-like calculation, and has great advantages in the aspects of power consumption and memory. The photon neural network mainly comprises two functional modules, namely a photon pulse neuron and a photon synapse. Low power consumption is one of the key requirements for photonic neural network devices. Studies have found that pulse-time dependent plasticity is the dominant synaptic weight update rule and is highly correlated with learning and memory in the brain.

As far as current research advances are concerned, the pulse time dependent plasticity of the optical domain is mainly achieved by semiconductor optical amplifiers. Under the normal condition, the working current of the semiconductor optical amplifier is large, and the requirement of low power consumption of the photon neural network cannot be met under the condition that the working current is dozens of to hundreds of milliamperes.

Disclosure of Invention

In view of the above-stated deficiencies of the prior art, the present invention aims to provide a low power optical synapse device capable of achieving pulse-time dependent plasticity.

The object of the present invention is achieved by the following means.

A low-power-consumption synapse device based on a vertical cavity semiconductor optical amplifier comprises two vertical cavity surface emitting semiconductor lasers VCSELs 1, a VCSEL2, an adjustable optical delay line VODL, two optical couplers OC1 and OC2, a three-port optical Circulator, a vertical cavity semiconductor optical amplifier VCSOA, a Bias and TEC for providing Bias current and temperature control for the vertical cavity semiconductor optical amplifier, and two band-pass filters lambda₁，λ₂Wherein the output of the VCSE1 is connected to an input of the OC 1; the output terminal of the VCSEL2 is connected to the input terminal of the VODL; the output terminal of the VODL is connected with the other input terminal of the OC 1; the output end of OC1 is connected with the 1 port of circular; the 2 port of the circular is connected with the VCSOA; the 3 port of the circular is connected with the input end of OC 2; two output terminals of OC2 are respectively at λ₁，λ₂The input ends of the two are connected; the Bias and TEC is connected with the VCSOA; lambda [ alpha ]₁，λ₂The output end of the voltage regulator is connected with an oscilloscope for testing through a photoelectric detector.

After the design, the VCSEL1 and the VCSEL2 respectively output one optical pulse; wherein the optical pulse output by the VCSEL2 is time-differentiated from the optical pulse output by the VCSEL1 via the VODL; two optical pulses are injected into the VCSOA through OC1, circulation; two optical pulses after the action of VCSOA pass through circulation, OC2, lambda₁，λ₂Respectively outputting; by adjusting the VODL, it can be observedThe pulse time of the optical domain depends on the plasticity.

Compared with the reported optical synapse device, the low-power-consumption optical synapse device based on the vertical cavity semiconductor optical amplifier has the following advantages: the power consumption is low, and the bias current is 0.5 mA-0.64 mA to work. The required input optical signal power is small, and only a microwatt level is needed to work. The time window is tuned over a wide range, with continuous tuning over a time range of-1500 ps to 1500 ps.

Drawings

FIG. 1 is a system block diagram of the apparatus of the present invention;

FIG. 2 is a graph of the pulse time dependence plasticity when the bias current of the VCSEL is 0.6mA, the wavelength of the VCSEL2 is 1550.36nm, and the output pulse power is 5 μ w;

FIG. 3 is a graph of the pulse time dependence plasticity when the bias current of the VCSEL is 0.64mA, the wavelength of the VCSEL2 is 1550.36nm, and the output pulse power is 5 μ w;

FIG. 4 is a graph of the pulse time dependence plasticity when the bias current of the VCSEL is 0.6mA, the wavelength of the VCSEL2 is 1550.33nm, and the output pulse power is 5 μ w;

fig. 5 is a graph of the pulse time dependence plasticity when the bias current of the VCSOA is 0.6mA, the wavelength of the VCSEL2 is 1550.36nm, and the output pulse power is 25 μ w.

Detailed Description

The embodiments of the present invention will be described in detail below with reference to the accompanying drawings: the present embodiment is implemented on the premise of the technical solution of the present invention, and a detailed implementation manner and a specific operation flow are given, but the scope of the present invention is not limited to the following embodiments.

As shown in FIG. 1, the scheme of the invention comprises two vertical cavity surface emitting semiconductor lasers VCSELs 1, a VCSEL2, an adjustable light delay line VODL, two optical couplers OC1 and OC2, a three-port optical ring Circulator, a vertical cavity semiconductor optical amplifier VCSOA, a Bias and TEC for providing Bias current and temperature control for the vertical cavity semiconductor optical amplifier, and two band-pass filters lambda₁，λ₂And (4) forming. The VCSELs 1 and 2 respectively output a light pulse; whereinThe optical pulse output by the VCSEL2 forms a time difference with the optical pulse output by the VCSEL1 through VODL; two optical pulses are injected into the VCSOA through OC1 and a Circulator; two optical pulses after the action of VCSOA pass through circulation, OC2, lambda₁，λ₂Respectively outputting; by adjusting the VODL, light domain synaptic plasticity can be observed.

In this example, the method is implemented by the following steps:

the method comprises the following steps: the peak resonance wavelength of the VCSEL is 1550.3nm, and the wavelength of the VCSEL1 is 1550.3 nm. The wavelength of the VCSEL2 is 1550.36nm, but can be precisely tuned with a temperature controller according to research needs. Lambda [ alpha ]₁，λ₂Matched with VCSEL1, VCSEL2, respectively. The Circulator is a three-port optical Circulator. OC1 has two inputs and one output, and OC2 has one input and two outputs that equally distribute power. The tuning range of the VODL is-1500 ps to 1500 ps.

Step two: the bias current of the VCSOA is adjusted to be 0.6mA, the frequency detuning of the VCSEL2 is adjusted to be 0.06nm, the output pulse power is 5 mu w, and the output pulse power of the VCSEL1 is 25 mu w. The two VCSELs simultaneously output pulse light, the VODL is changed, the time when the two pulse light reach the VCSOA is different, and the maximum power of the pulse light output by the VCSOA is measured.

Step three: a pulse time dependent plasticity curve is calculated. The mathematical expression is as follows:

where Δ t represents the time difference between the pulse output from VCSEL2 and the pulse output from VCSEL1 when they reach the VCSOA. P_2maxThe pulse output by the VCSEL2 enters the VCSEL before the pulse output by the VCSEL1, namely delta t is less than 0, and the power of the peak pulse output from the VCSEL is at the moment; p_out2(t) represents the peak pulse power of the pulse output by the VCSEL2 after passing through the VCSOA under different Δ t conditions.

Step four: the pulse time-dependent plasticity curves are plotted according to different Δ t and Δ ω as shown in fig. 2.

Step five: changing the bias current of the VCSOA to 0.64mA, repeating the operations from the second step to the fourth step with other parameters, and obtaining a pulse time dependence plasticity curve as shown in figure 3.

Step six: changing the wavelength of the VCSEL2 to 1550.33nm, repeating the operation from the second step to the fourth step with other parameters, and obtaining a pulse time-dependent plasticity curve as shown in FIG. 4.

Step seven: changing the pulse power output by the VCSEL2 to 25 μ w, repeating the operations from step two to step four with the same other parameters, and obtaining a pulse time-dependent plasticity curve as shown in fig. 5.

In summary of the above statements, the present invention has the following features: 1) realizing pulse time-dependent plasticity of an optical domain by using a vertical cavity semiconductor optical amplifier; 2) the required bias current is low; 3) low power requirements for the injected pulse; 4) the time window tuning range is large.

In summary, the above-mentioned embodiments are only examples of the present invention, and are not intended to limit the scope of the present invention, and it should be noted that, for those skilled in the art, equivalent modifications and substitutions (such as appropriately changing the magnitude of the operating current, changing the frequency detuning, and changing the magnitude of the injection pulse power) can be made within the scope of the present invention.