阅读说明：本技术 一种高效高功率微波器件 (High-efficiency high-power microwave device ) 是由 张运俭 丁恩燕 于 2019-09-27 设计创作，主要内容包括：本发明公开了一种高效高功率微波器件,包括外套筒,外套筒内设置高频结构；高频结构沿电子束传输方向依次设置相位调节区、束波互作用区和微波反射区；相位调节区设置剖面为矩形的相位调节腔,束波互作用区和微波反射区设置剖面为梯形的束波互作用腔、微波反射腔；外套筒外设置引导磁场,使环形电子束打在束波互作用区的尾部；电压280kV,电流1.7kA,直径为30mm的环形电子束在磁场强度0.75T的轴向磁场引导下在高频结构内传输,产生频率为9.8GHz的高功率微波,束波转换效率约50％。采用本发明的一种高效高功率微波器件,可产生高功率微波,微波输出效率高。(The invention discloses a high-efficiency high-power microwave device, which comprises an outer sleeve, wherein a high-frequency structure is arranged in the outer sleeve; the high-frequency structure is sequentially provided with a phase adjusting area, a beam wave interaction area and a microwave reflection area along the transmission direction of the electron beam; the phase adjusting area is provided with a phase adjusting cavity with a rectangular section, and the beam interaction area and the microwave reflecting area are provided with a beam interaction cavity and a microwave reflecting cavity with trapezoidal sections; a guiding magnetic field is arranged outside the outer sleeve, so that the annular electron beam is irradiated on the tail part of the beam wave interaction region; the voltage is 280kV, the current is 1.7kA, and a ring-shaped electron beam with the diameter of 30mm is transmitted in a high-frequency structure under the guidance of an axial magnetic field with the magnetic field intensity of 0.75T to generate high-power microwaves with the frequency of 9.8GHz, and the beam conversion efficiency is about 50%. The high-efficiency high-power microwave device can generate high-power microwaves and has high microwave output efficiency.)

1. A high-efficiency high-power microwave device is characterized in that: the high-frequency structure comprises an outer sleeve, wherein a high-frequency structure is arranged in the outer sleeve;

the high-frequency structure is sequentially provided with a phase adjusting area, a beam wave interaction area and a microwave reflection area along the transmission direction of an electron beam, and an electron beam transmission channel with the diameter of 34mm is arranged in the high-frequency structure;

the phase adjusting area is provided with a phase adjusting cavity with a rectangular section, and the beam interaction area and the microwave reflecting area are provided with a beam interaction cavity and a microwave reflecting cavity with trapezoidal sections;

a guiding magnetic field is arranged outside the outer sleeve, so that the annular electron beam is irradiated on the tail part of the beam wave interaction region;

the voltage is 280kV, the current is 1.7kA, and a ring-shaped electron beam with the diameter of 30mm is transmitted in a high-frequency structure under the guidance of an axial magnetic field with the magnetic field intensity of 0.75T to generate high-power microwaves with the frequency of 9.8GHz, and the beam conversion efficiency is about 50%.

2. A high efficiency high power microwave device as claimed in claim 1, characterized in that: the phase adjusting area comprises a first phase adjusting cavity and a second phase adjusting cavity, the outer diameter of the first phase adjusting cavity is 40mm, and the axial length of the first phase adjusting cavity is 35 mm; the outer diameter of the second phase adjusting cavity is 44mm, the axial length is 20mm, and the interval between the two phase adjusting cavities is 20 mm.

3. A high efficiency high power microwave device as claimed in claim 1, characterized in that: the beam interaction region comprises 5 beam interaction cavities, the outer diameters of the beam interaction cavities are 38mm, 38mm, 40mm, 42mm and 42mm in sequence along the transmission direction of the electron beams, and the period of each beam interaction cavity is 30 mm.

4. A high efficiency high power microwave device as claimed in claim 1, characterized in that: the microwave reflection area comprises 3 microwave reflection cavities, and the outer diameters of the microwave reflection cavities are 42mm, 42mm and 40mm in sequence along the transmission direction of the electron beams; the period of the microwave reflecting cavity is 30 mm.

5. A high efficiency high power microwave device as claimed in claim 1, characterized in that: the axial interval between the phase adjusting area and the beam wave interaction area is 106mm, and the axial interval between the beam wave interaction area and the microwave reflecting area is 87 mm.

Technical Field

The invention relates to a high-efficiency high-power microwave device, belonging to the technical field of high-power microwave devices.

Background

The high-power microwave generally refers to electromagnetic waves with peak power of more than 100MW and working frequency of 1-300 GHz. With the research and application requirements of high-power microwave technology, a high-efficiency microwave source is an important direction for the development of high-power microwaves. The axial O-shaped high-power microwave device is a high-power microwave device with wider application due to the easy guidance of electron beams and the changeable combination of the structure. The high power microwave conversion efficiency of the device is about 30% generally, so how to improve the efficiency is the key point of the development of the device.

Disclosure of Invention

The invention aims to: aiming at the existing problems, the invention provides a high-efficiency high-power microwave device which can generate high-power microwaves and has high microwave output efficiency.

The technical scheme adopted by the invention is as follows:

a high-efficiency high-power microwave device comprises a high-efficiency high-power microwave device, and is characterized in that: the high-frequency structure comprises an outer sleeve, wherein a high-frequency structure is arranged in the outer sleeve;

the high-frequency structure is sequentially provided with a phase adjusting area, a beam wave interaction area and a microwave reflection area along the transmission direction of an electron beam, and an electron beam transmission channel with the diameter of 34mm is arranged in the high-frequency structure;

the phase adjusting area is provided with a phase adjusting cavity with a rectangular section, and the beam interaction area and the microwave reflecting area are provided with a beam interaction cavity and a microwave reflecting cavity with trapezoidal sections;

a guiding magnetic field is arranged outside the outer sleeve, so that the annular electron beam is irradiated on the tail part of the beam wave interaction region;

the voltage is 280kV, the current is 1.7kA, and a ring-shaped electron beam with the diameter of 30mm is transmitted in a high-frequency structure under the guidance of an axial magnetic field with the magnetic field intensity of 0.75T to generate high-power microwaves with the frequency of 9.8GHz, and the beam conversion efficiency is about 50%.

In the scheme, two ends of an outer sleeve are closed, the interior of the outer sleeve is vacuumized to millipascal level, a cathode for emitting annular electron beams is arranged at one end in the outer sleeve, a guide magnetic field outside a guide sleeve extends from the cathode to the tail of a beam wave interaction area, and the annular electron beams are transmitted in a transmission channel and hit the tail of the beam wave interaction area.

The phase adjusting area can adjust and control the pre-clustering phase of the electron beams to be consistent with the phase of the microwaves, so that the optimal effect of pre-clustering of the electron beams is achieved, and preparation is made for the electron beams to enter the beam wave mutual left and right areas to convert energy into the microwaves; in the beam wave interaction region, the electron beam interacts with the microwave to generate energy conversion, and the electric energy is converted into microwave energy, so that high-power microwave is generated; the microwave reflecting area can reflect the microwaves transmitted to the downstream to the beam wave interaction area, so that the interaction between the electron beam and the microwaves is further improved, and the microwave power output is enhanced.

Preferably, the phase adjusting area comprises a first phase adjusting cavity and a second phase adjusting cavity, the outer diameter of the first phase adjusting cavity is 40mm, and the axial length of the first phase adjusting cavity is 35 mm; the outer diameter of the second phase adjusting cavity is 44mm, the axial length is 20mm, and the interval between the two phase adjusting cavities is 20 mm.

Preferably, the beam interaction region comprises 5 beam interaction chambers, the outer diameter of each beam interaction chamber is 38mm, 38mm, 40mm, 42mm and 42mm in sequence along the transmission direction of the electron beam, and the period of each beam interaction chamber is 30 mm.

Preferably, the microwave reflection area comprises 3 microwave reflection cavities, the outer diameters of the microwave reflection cavities are 42mm, 42mm and 40mm in sequence along the transmission direction of the electron beam, and the period of the microwave reflection cavities is 30 mm.

Preferably, the phase adjustment region is axially spaced from the beam interaction region by 106mm, and the beam interaction region is axially spaced from the microwave reflection region by 87 mm.

In the above scheme, the beam interaction region and the microwave reflection region are annular groove-shaped cavities with trapezoidal sections, and the right-angled trapezoids at the two ends are used for enhancing impedance abrupt change, so that the energy of the electron beam is rapidly converted, and the oscillation starting time of the microwave is prolonged.

The invention relates to a high-efficiency high-power microwave device which comprises a phase adjusting structure, a beam wave interaction structure and a microwave reflection structure. Wherein, the transmission end of the annular electron beam hits the tail part of the beam wave interaction structure through the guiding magnetic field, and the microwave reflection structure is completely separated from the electron beam, which is the key difference between the invention and the conventional device.

In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that: the high-efficiency high-power microwave output is realized by adopting an axial three-section form; the microwave reflecting structure is designed into a microwave transmission waveguide, and the interaction between microwave reproduction reflection and electron beams is realized through a slow wave structure, so that the microwave output efficiency reaches 50%.

Drawings

The invention will now be described, by way of example, with reference to the accompanying drawings, in which:

fig. 1 is a schematic cross-sectional structure diagram of a high-efficiency high-power microwave device.

The labels in the figure are: 1-phase adjusting area, 2-beam wave interaction area, 3-microwave reflecting area, 4-annular electron beam, 5-guiding magnetic field, 6-outer sleeve, 11-first phase adjusting cavity, 12-second phase adjusting cavity, 21-beam wave interaction cavity and 31-microwave reflecting cavity.

Detailed Description

All of the features disclosed in this specification, or all of the steps in any method or process so disclosed, may be combined in any combination, except combinations of features and/or steps that are mutually exclusive.

Any feature disclosed in this specification may be replaced by alternative features serving equivalent or similar purposes, unless expressly stated otherwise. That is, unless expressly stated otherwise, each feature is only an example of a generic series of equivalent or similar features.

As shown in fig. 1, the high-efficiency high-power microwave device of this embodiment includes an outer sleeve, two ends of the outer sleeve are sealed, the inside of the outer sleeve is evacuated to millipascal, a cathode for emitting an annular electron beam is disposed at one end inside the outer sleeve, a high-frequency structure is disposed inside the outer sleeve, and an electron beam transmission channel with a diameter of 34mm is disposed inside the high-frequency structure;

the high-frequency structure is sequentially provided with a phase adjusting area, a beam wave interaction area and a microwave reflection area along the transmission direction of the electron beam; the phase adjusting area is provided with a phase adjusting cavity with a rectangular section, and the beam interaction area and the microwave reflecting area are provided with a beam interaction cavity and a microwave reflecting cavity with trapezoidal sections;

the phase adjusting cavity is an annular groove with a rectangular section, and the beam interaction cavity and the microwave reflecting cavity are both annular grooves with a trapezoidal section; the phase adjusting area comprises a first phase adjusting cavity and a second phase adjusting cavity, the diameter of the first phase adjusting cavity is 40mm, the axial length of the first phase adjusting cavity is 35mm, the diameter of the second phase adjusting cavity is 44mm, the axial length of the second phase adjusting cavity is 20mm, and the interval between the first phase adjusting cavity and the second phase adjusting cavity is 20 mm; the beam interaction area comprises 5 beam interaction cavities, the diameters of the beam interaction cavities are 38mm, 38mm, 40mm, 42mm and 42mm in sequence along the transmission direction of the electron beams, and the period of each beam interaction cavity is 30 mm; the microwave reflection area comprises 3 microwave reflection cavities, and the diameters of the 3 microwave reflection cavities are 42mm, 42mm and 40mm in sequence along the transmission direction of the electron beam; the period of the microwave reflecting cavity is 30 mm; the axial spacing between the phase adjustment zone and the beam interaction zone is 106mm, and the axial spacing between the beam interaction zone and the microwave reflection zone is 87 mm.

A guiding magnetic field is arranged outside the outer sleeve, so that the annular electron beam is irradiated on the tail part of the beam wave interaction region;

the voltage 280kV is applied between the cathode and the anode, the cathode emits and generates an annular electron beam with the diameter of 30mm and the beam current intensity of 1.7kA, the annular electron beam is transmitted in a high-frequency structure under the guidance of an axial magnetic field with the magnetic field intensity of 0.75T, the energy of the annular electron beam is transferred to a microwave field, high-power microwave with the frequency of 9.8GHz is generated, and the beam wave conversion efficiency is 50%.

In conclusion, the high-efficiency high-power microwave device disclosed by the invention realizes high-efficiency high-power microwave output in an axial three-section mode; the microwave reflecting structure is designed into a microwave transmission waveguide, and the interaction between microwave reproduction reflection and electron beams is realized through a slow wave structure, so that the microwave output efficiency reaches 50%.

The invention is not limited to the foregoing embodiments. The invention extends to any novel feature or any novel combination of features disclosed in this specification and any novel method or process steps or any novel combination of features disclosed.