阅读说明：本技术 一种4毫米波高功率微波器件 (4 millimeter wave high-power microwave device ) 是由 张运俭 丁恩燕 于 2019-09-27 设计创作，主要内容包括：本发明公开了一种4毫米波高功率微波器件,包括外套筒,外套筒内设置高频结构；高频结构沿电子束传播方向依次包括反射区、束流漂流区、正向束波转换区、相位调制区和反向束波转换区；正向束波转换区和反向束波转换区的剖面曲线为以相位调制区中心线对称分布的正弦曲线,正弦曲线的平均直径为14.0mm,周期为1.6mm；内直径9.4mm,外直径10mm,电压300kV,电流5.0kA的环形电子束在磁场强度0.62T的轴向磁场引导下在高频结构内传输,产生波长为4毫米的高功率微波,束波转换效率达到40％。采用本发明的一种4毫米波高功率微波器件,有效的提高了功率容量及微波峰值功率。(The invention discloses a 4 millimeter wave high-power microwave device, which comprises an outer sleeve, wherein a high-frequency structure is arranged in the outer sleeve; the high-frequency structure sequentially comprises a reflection area, a beam drift area, a forward beam wave conversion area, a phase modulation area and a reverse beam wave conversion area along the propagation direction of an electron beam; the profile curves of the forward beam-wave conversion area and the reverse beam-wave conversion area are sinusoidal curves symmetrically distributed by using the central line of the phase modulation area, the average diameter of the sinusoidal curves is 14.0mm, and the period is 1.6 mm; the inner diameter is 9.4mm, the outer diameter is 10mm, the voltage is 300kV, the annular electron beam with the current of 5.0kA is transmitted in a high-frequency structure under the guidance of an axial magnetic field with the magnetic field intensity of 0.62T to generate high-power microwaves with the wavelength of 4mm, and the beam-wave conversion efficiency reaches 40%. By adopting the 4 millimeter wave high-power microwave device, the power capacity and the microwave peak power are effectively improved.)

1. A4 millimeter wave high power microwave device is characterized in that: comprises an outer sleeve, wherein a high-frequency structure is arranged in the outer sleeve;

the high-frequency structure sequentially comprises a reflection area, a beam drift area, a forward beam wave conversion area, a phase modulation area and a reverse beam wave conversion area along the propagation direction of an electron beam; a microwave output waveguide is arranged behind the reverse beam wave conversion region;

the profile curves of the forward beam-wave conversion area and the reverse beam-wave conversion area are sinusoidal curves symmetrically distributed by using the central line of the phase modulation area, the average diameter of the sinusoidal curves is 14.0mm, and the period is 1.6 mm; the inner diameter is 9.4mm, the outer diameter is 10mm, the voltage is 300kV, the annular electron beam with the current of 5.0kA is transmitted in a high-frequency structure under the guidance of an axial magnetic field with the magnetic field intensity of 0.62T to generate high-power microwaves with the wavelength of 4mm, and the beam-wave conversion efficiency reaches 40%.

2. The 4mm wave high power microwave device of claim 1, wherein: the reflecting area comprises a first reflecting cavity and a second reflecting cavity, and the cross sections of the first reflecting cavity and the second reflecting cavity are rectangular.

3. The 4mm wave high power microwave device of claim 2, wherein: the inner diameter of the first reflecting cavity is 12mm, the outer diameter of the first reflecting cavity is 15mm, and the axial length of the first reflecting cavity is 2 mm; the inner diameter of the second reflecting cavity is 12mm, the outer diameter of the second reflecting cavity is 18mm, and the axial length of the second reflecting cavity is 2 mm; the first reflective cavity and the second reflective cavity are spaced 2mm apart.

4. The 4mm wave high power microwave device of claim 1, wherein: the beam drift region is a hollow cylindrical channel, the length of the hollow cylindrical channel is 3.6mm, and the diameter of the hollow cylindrical channel is 13 mm.

5. The 4mm wave high power microwave device of claim 1, wherein: the phase modulation zone is provided with an annular phase modulation cavity, the top end of the phase modulation zone is provided with an annular protruding part, the axial length of the phase modulation zone is 0.8mm, and the amplitude of the phase modulation zone is 1.0 mm.

6. The 4mm wave high power microwave device of claim 1, wherein: the profile curves of the forward beam-wave conversion area and the reverse beam-wave conversion area are distributed in a sine gradient manner.

7. The 4mm wave high power microwave device of claim 6, wherein: the section curve of the forward beam-wave conversion area is linearly amplified along the radial amplitude of the electron beam transmission direction, and the section curve of the reverse beam-wave conversion area is linearly and gradually reduced along the radial amplitude of the electron beam transmission direction.

8. The 4mm wave high power microwave device of claim 1, wherein: the amplitude slope of the profile curves of the forward beam-wave conversion region and the reverse beam-wave conversion region is 0.125.

9. The 4mm wave high power microwave device of claim 1, wherein: the section curves of the forward beam wave conversion region and the reverse beam wave conversion region are 5 periods of sinusoidal curves.

10. The 4mm wave high power microwave device of claim 1, wherein: the diameter of the microwave output waveguide is 14 mm.

Technical Field

The invention relates to a 4 millimeter wave high-power microwave device, and belongs to the technical field of high-power microwave devices.

Background

The high-power microwave generally refers to electromagnetic waves with peak power of more than 100MW and working frequency of 1-300 GHz. With the research and application requirements of high-power microwave technology, high-power microwave sources gradually develop to high frequency, wherein high-power microwaves with the wavelength of 4mm are an important research direction.

The axial O-shaped high-power microwave device is a high-power microwave device with wider application due to the easy guidance of electron beams and the changeable combination of the structure. The increase in device frequency dramatically reduces the radial size of the device, causing a reduction in power capability. This physical mechanism is a key issue that must be addressed for high frequency, high power microwave devices.

Disclosure of Invention

The invention aims to: aiming at the existing problems, the invention provides the 4 millimeter wave high-power microwave device which can generate high-frequency high-power microwaves and effectively improve the microwave generation efficiency.

The technical scheme adopted by the invention is as follows:

a4 millimeter wave high-power microwave device comprises an outer sleeve, wherein a high-frequency structure is arranged in the outer sleeve;

the high-frequency structure sequentially comprises a reflection area, a beam drift area, a forward beam wave conversion area, a phase modulation area and a reverse beam wave conversion area along the propagation direction of an electron beam; a microwave output waveguide is arranged behind the reverse beam wave conversion region;

the profile curves of the forward beam-wave conversion area and the reverse beam-wave conversion area are sinusoidal curves symmetrically distributed by using the central line of the phase modulation area, the average diameter of the sinusoidal curves is 14.0mm, and the period is 1.6 mm;

the inner diameter is 9.4mm, the outer diameter is 10mm, the voltage is 300kV, the annular electron beam with the current of 5.0kA is transmitted in a high-frequency structure under the guidance of an axial magnetic field with the magnetic field intensity of 0.62T to generate high-power microwaves with the wavelength of 4mm, and the beam-wave conversion efficiency reaches 40%.

In the scheme, two ends of an outer sleeve are closed, the interior of the outer sleeve is vacuumized to millipascal, and a cathode for emitting annular electron beams is arranged at one end in the outer sleeve.

Preferably, the reflection region includes a first reflection cavity and a second reflection cavity, and the first reflection cavity and the second reflection cavity have rectangular cross sections.

Preferably, the cross section of the connection area between the first reflective cavity and the second reflective cavity is semicircular.

Preferably, the inner diameter of the first reflecting cavity is 12mm, the outer diameter of the first reflecting cavity is 15mm, and the axial length of the first reflecting cavity is 2 mm; the inner diameter of the second reflecting cavity is 12mm, the outer diameter of the second reflecting cavity is 18mm, and the axial length of the second reflecting cavity is 2 mm; the first reflective cavity and the second reflective cavity are spaced 2mm apart.

In the above scheme, the inner diameter of the reflection cavity refers to the diameter of a circle at the opening of the reflection cavity, and the outer diameter of the reflection cavity refers to the diameter of a circle at the bottom of the groove of the reflection cavity.

Preferably, the beam drift region is a hollow cylindrical channel, the length of the hollow cylindrical channel is 3.6mm, and the diameter of the hollow cylindrical channel is 13 mm.

Preferably, the cross section of a connecting area between the reflecting area and the beam drift area is semicircular.

Preferably, the phase modulation region is provided with an annular phase modulation cavity, the top end of the phase modulation region is provided with an annular protrusion, the axial length of the phase modulation region is 0.8mm, and the amplitude of the phase modulation region is 1.0 mm.

Preferably, the cross-sectional curves of the forward beam-wave conversion region and the reverse beam-wave conversion region are in a sinusoidal gradient distribution.

Preferably, the cross-sectional curve of the forward beam-to-wave conversion region is linearly enlarged in amplitude along the radial direction of the electron beam transmission direction, and the cross-sectional curve of the reverse beam-to-wave conversion region is linearly tapered in amplitude along the radial direction of the electron beam transmission direction.

Preferably, the slope of the amplitude of the cross-sectional curve of the forward beam-to-wave conversion region and the reverse beam-to-wave conversion region is 0.125.

Preferably, the forward beam-wave converting region and the backward beam-wave converting region have a profile curve of a 5-cycle sine curve.

Preferably, the microwave output waveguide has a diameter of 14 mm.

According to the 4 millimeter wave high-power microwave device, the power capacity of the microwave device is effectively improved by adopting the slow wave structure sine structure and the auxiliary structure rounding treatment; and the design of the positive and negative beam wave interaction region is adopted, the beam wave conversion efficiency is improved, and the application range of the high-frequency device is effectively enlarged.

In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that: the forward and reverse beam wave interaction regions and the sine curve design are adopted, so that the power capacity and the microwave peak power are effectively improved; compared with the same-frequency-band device, the structure size is extremely simple, and the device has the advantages of miniaturization, high efficiency and easy assembly; can generate high-power microwave with the wavelength of 4mm, and the beam conversion efficiency reaches 40 percent.

Drawings

The invention will now be described, by way of example, with reference to the accompanying drawings, in which:

fig. 1 is a schematic cross-sectional structure diagram of a 4 mm-wave high-power microwave device.

The labels in the figure are: the device comprises a 1-reflection region, a 2-beam drift region, a 3-forward beam wave conversion region, a 4-phase modulation region, a 5-reverse beam wave conversion region, a 6-microwave output waveguide, a 7-annular electron beam, an 8-outer sleeve, an 11-first reflection cavity, a 12-second reflection cavity, a 41-phase modulation cavity and a 42-annular protrusion part.

Detailed Description

All of the features disclosed in this specification, or all of the steps in any method or process so disclosed, may be combined in any combination, except combinations of features and/or steps that are mutually exclusive.

Any feature disclosed in this specification may be replaced by alternative features serving equivalent or similar purposes, unless expressly stated otherwise. That is, unless expressly stated otherwise, each feature is only an example of a generic series of equivalent or similar features.

As shown in fig. 1, the 4 mm-wave high-power microwave device of the present embodiment includes an outer sleeve, two ends of the outer sleeve are sealed, the inside of the outer sleeve is vacuumized to millipascal level, a cathode for emitting a ring-shaped electron beam is disposed at one end in the outer sleeve, and a high-frequency structure is disposed in the outer sleeve;

the high-frequency structure sequentially comprises a reflection area, a beam drift area, a forward beam wave conversion area, a phase modulation area and a reverse beam wave conversion area along the propagation direction of an electron beam; a microwave output waveguide is arranged behind the reverse beam wave conversion region; the section curves of the forward beam wave conversion area and the reverse beam wave conversion area are sinusoidal curves symmetrically distributed by using the central line of the phase modulation area.

The reflecting area comprises a first reflecting cavity and a second reflecting cavity, the sections of the first reflecting cavity and the second reflecting cavity are rectangular, the section of a connecting area between the first reflecting cavity and the second reflecting cavity is semicircular, the inner diameter of the first reflecting cavity is 12mm, the outer diameter of the first reflecting cavity is 15mm, and the axial length of the first reflecting cavity is 2 mm; the inner diameter of the second reflecting cavity is 12mm, the outer diameter of the second reflecting cavity is 18mm, and the axial length of the second reflecting cavity is 2 mm; the interval between the first reflecting cavity and the second reflecting cavity is 2 mm; the beam drift region is a hollow cylindrical channel, the length of the channel is 3.6mm, the diameter of the channel is 13mm, and the section of a connecting region between the reflecting region and the beam drift region is semicircular; the phase modulation area is provided with an annular phase modulation cavity, the top end of the phase modulation area is provided with an annular protruding part, the axial length of the phase modulation area is 0.8mm, and the amplitude of the phase modulation area is 1.0 mm;

the profile curves of the forward beam wave conversion area and the reverse beam wave conversion area are distributed in a sine gradient manner, the profile curve of the forward beam wave conversion area is linearly amplified along the radial amplitude of the electron beam transmission direction, the profile curve of the reverse beam wave conversion area is linearly and gradually reduced along the radial amplitude of the electron beam transmission direction, the amplitude slope of the profile curves of the forward beam wave conversion area and the reverse beam wave conversion area is 0.125, the profile curves of the forward beam wave conversion area and the reverse beam wave conversion area are sinusoidal curves with 5 periods, the average diameter of the profile sinusoidal curves of the forward beam wave conversion area and the reverse beam wave conversion area is 14mm, and the period is 1.6 mm; the microwave output waveguide diameter was 14 mm.

The voltage of 300kV is applied between the cathode and the anode, the cathode emits and generates an annular electron beam with the outer diameter of 10mm, the inner diameter of 9.4mm and the beam intensity of 5.0kA, the annular electron beam is transmitted in a high-frequency structure under the guidance of an axial magnetic field with the magnetic field intensity of 0.62T, the energy of the annular electron beam is transferred to a microwave field, high-power microwave with the wavelength of 4.0mm is generated, and the beam-wave conversion efficiency is 40%.

In conclusion, the 4 millimeter wave high-power microwave device provided by the invention effectively improves the power capacity and the microwave peak power by adopting the forward and reverse beam interaction regions and the sinusoidal design; compared with the same-frequency-band device, the structure size is extremely simple, and the device has the advantages of miniaturization, high efficiency and easy assembly; can generate high-power microwave with the wavelength of 4mm, and the beam conversion efficiency reaches 40 percent.

The invention is not limited to the foregoing embodiments. The invention extends to any novel feature or any novel combination of features disclosed in this specification and any novel method or process steps or any novel combination of features disclosed.