阅读说明：本技术 等离子体刻蚀装置 (Plasma etching device ) 是由 赵博超 施洋 郑江楠 于 2019-10-21 设计创作，主要内容包括：本申请涉及半导体加工设备技术领域,具体涉及一种等离子体刻蚀装置。本申请实施例提供了一种等离子体刻蚀装置,包括反应腔,反应腔内设置有:静电吸盘,静电吸盘用于吸附待处理晶片；等离子体束释放口,等离子体束缚口用于形成轰击待处理晶片的等离子体束；电场发生器,电场发生器用于产生电场；当等离子体刻蚀装置工作时,反应腔内形成有磁场,磁场沿着等离子体束的径向延伸；电场沿等离子体束的轴向延伸。本申请通过电场轴向穿过等离子体束,磁场径向穿过等离子体束,从而使得等离子体束中会形成环向等离子体流,使得等离子体束中的等离子体分布均匀,提高等离子体束的稳定性。(The application relates to the technical field of semiconductor processing equipment, in particular to a plasma etching device. The embodiment of the application provides a plasma etching device, which comprises a reaction cavity, wherein an electrostatic chuck is arranged in the reaction cavity and used for adsorbing a wafer to be processed; the plasma beam releasing port is used for forming a plasma beam for bombarding a wafer to be processed; the electric field generator is used for generating an electric field; when the plasma etching device works, a magnetic field is formed in the reaction cavity and extends along the radial direction of the plasma beam; the electric field extends in the axial direction of the plasma beam. The electric field axially penetrates through the plasma beam, and the magnetic field radially penetrates through the plasma beam, so that annular plasma flow can be formed in the plasma beam, the plasma in the plasma beam is uniformly distributed, and the stability of the plasma beam is improved.)

1. The utility model provides a plasma etching device which characterized in that, includes the reaction chamber, is provided with in the reaction chamber:

the electrostatic chuck is used for adsorbing a wafer to be processed;

the plasma beam releasing port is used for forming a plasma beam for bombarding a wafer to be processed;

the electric field generator is used for generating an electric field;

a magnetic field is formed in the reaction cavity, and when the plasma etching device works, the magnetic field extends along the radial direction of the plasma beam; the electric field extends in the axial direction of the plasma beam.

2. The plasma etching apparatus of claim 1, wherein the electric field generator comprises a first electrode and a second electrode disposed opposite to each other, the first electrode and the second electrode being connected to an oscillating radio frequency source.

3. The plasma etching apparatus of claim 1, wherein the magnetic field rotates in a plane perpendicular to the electric field.

4. A plasma etching apparatus as claimed in claim 1 or 3, wherein the cylindrical magnetic field generator is rotatably fitted over the reaction chamber; the magnetic field generator is provided with an anode area and a cathode area which are opposite to each other, and a magnetic field is formed between the anode area and the cathode area.

5. The plasma etching apparatus according to claim 1 or 3, wherein the magnetic flux of the magnetic field is 50 to 200G.

6. The plasma etching apparatus as claimed in claim 1, wherein an anode plate and a cathode plate are oppositely provided to both sides of the reaction chamber perpendicular to the direction of the electric field, and a magnetic field is formed between the anode plate and the cathode plate.

7. The plasma etching apparatus as claimed in claim 1, wherein the reaction chamber is a vacuum chamber, and the reaction chamber is connected to a vacuum pump.

8. The plasma etching apparatus as claimed in claim 1, further comprising a discharge pin, the conductive end of the discharge pin being capable of periodically contacting the wafer to be processed.

9. The plasma etching apparatus according to claim 8, wherein the discharge end of the discharge thimble is connected to a motor through a push rod, and the rotation speed of the motor is 400 to 500 rpm.

Technical Field

The application relates to the technical field of semiconductor processing equipment, in particular to a plasma etching device.

Background

With the improvement of the integrated level of the integrated circuit and the reduction of the line width of the element, the plasma etching process is widely applied.

In the related art, the plasma etching process is performed by disposing an electrode in a reaction chamber of a plasma etching apparatus, supplying an etching gas as a reaction gas into the reaction chamber, forming a plasma beam of the reaction gas in the reaction chamber by applying a radio frequency to the electrode, and etching a surface of a wafer by the plasma beam.

However, once the voltage changes during the etching process, the rf coupling at the local position of the plasma etching apparatus changes, which results in the problems of unstable plasma and non-uniform ion density. If the voltage drop of the electrode plate sheath is too high, higher ion bombardment energy is easy to occur between the low ion density part and the high ion density part, and the instantaneous bombardment energy of the ions can cause the plasma beam to etch the surface of the wafer to cause the problem of uneven etching, such as forming etched accumulations on the surface of the wafer.

Disclosure of Invention

The application provides a plasma etching device, which can solve the problem that plasmas generated in a reaction cavity are unstable when voltage changes in the related art.

On the one hand, the embodiment of the application provides a plasma etching device, including the reaction chamber, be provided with in the reaction chamber:

the electrostatic chuck is used for adsorbing a wafer to be processed;

the plasma beam releasing port is used for forming a plasma beam for bombarding a wafer to be processed;

the electric field generator is used for generating an electric field;

a magnetic field is formed in the reaction cavity, and when the plasma etching device works, the magnetic field extends along the radial direction of the plasma beam; the electric field extends in the axial direction of the plasma beam.

Optionally, the electric field generator comprises a first electrode and a second electrode oppositely arranged, and the first electrode and the second electrode are connected with the oscillating radio frequency source.

Alternatively, the magnetic field rotates in a plane perpendicular to the electric field.

Optionally, the cylindrical magnetic field generator is rotatably sleeved outside the reaction cavity; the magnetic field generator is provided with an anode area and a cathode area which are opposite to each other, and a magnetic field is formed between the anode area and the cathode area.

Optionally, the magnetic flux of the magnetic field is 50-200G.

Optionally, an anode plate and a cathode plate are oppositely arranged on two sides of the reaction chamber perpendicular to the direction of the electric field, and a magnetic field is formed between the anode plate and the cathode plate.

Optionally, the reaction chamber is a vacuum chamber, and the reaction chamber is connected with a vacuum pump.

Optionally, the wafer processing device further comprises a discharge thimble, and the conductive end of the discharge thimble can periodically contact the wafer to be processed.

Optionally, the discharging end of the discharging thimble is connected with the motor through the push rod, and the rotating speed of the motor is 400-500 rpm.

The technical scheme at least comprises the following advantages: the magnetic field extends along the radial direction of the plasma beam, the electric field extends along the axial direction of the plasma beam, the plasma in the plasma beam forms annular plasma flow in the plasma beam under the combined action of the electric field and the magnetic field, and the plasma flow can enable the plasma in the plasma beam to be uniformly distributed, so that the stability of the plasma beam is improved.

Drawings

In order to more clearly illustrate the detailed description of the present application or the technical solutions in the prior art, the drawings needed to be used in the detailed description of the present application or the prior art description will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.

Fig. 1 is a schematic cross-sectional structure diagram of a first embodiment of the present application.

Fig. 2 is a functional diagram of the first embodiment of the present application.

Fig. 3 is a schematic cross-sectional structure diagram of the second embodiment of the present application.

Fig. 4 is a schematic cross-sectional structure diagram of a third embodiment of the present application.

Fig. 5 is a perspective view of a magnetic field generator in accordance with a third embodiment of the present application.

FIG. 6 is a schematic cross-sectional view of the fourth embodiment of the present application

100. The plasma processing device comprises a reaction chamber, 110, a vacuum pump, 200, an electrostatic chuck, 300, a plasma beam release port, 400, a plasma beam release port, 500, a wafer to be processed, 610, a first electrode, 620, a second electrode, 700, a magnetic field generator, 800, a discharge thimble, 910, a push rod, 920, a motor and 930, and a needle valve.

Detailed Description

The technical solutions in the present application will be described clearly and completely with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; the connection can be mechanical connection or electrical connection; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.

In addition, the technical features mentioned in the different embodiments of the present application described below may be combined with each other as long as they do not conflict with each other.