阅读说明：本技术 基于氧化镍/β-三氧化二镓异质结的紫外探测器及其制备方法 (Ultraviolet detector based on nickel oxide/beta-gallium sesquioxide heterojunction and preparation method thereof ) 是由 唐利斌 项金钟 贾梦涵 姬荣斌 于 2019-10-23 设计创作，主要内容包括：基于NiO/β-Ga<Sub>2</Sub>O<Sub>3</Sub>异质结的紫外探测器及其制备方法,属于光电技术领域,尤其是一种具有ITO/p-NiO/n-β-Ga<Sub>2</Sub>O<Sub>3</Sub>/Al简单垂直结构的紫外器件及其制备方法。基于NiO/β-Ga<Sub>2</Sub>O<Sub>3</Sub>异质结的紫外探测器,从下至上依次是衬底、阳极层、p-NiO薄膜层、n-β-Ga<Sub>2</Sub>O<Sub>3</Sub>薄膜层,以及阴极层。制备方法包括清洁衬底、p-NiO薄膜层溅射、n-β-Ga<Sub>2</Sub>O<Sub>3</Sub>薄膜层溅射,以及蒸镀Al阴极层。本发明的器件对紫外光显示出良好的敏感性,器件性能优异。(Based on NiO/beta-Ga 2 O 3 An ultraviolet detector with heterojunction and a preparation method thereof, which belong to the photoelectric technical field, in particular to an ultraviolet detector with ITO/p-NiO/n-beta-Ga 2 O 3 An ultraviolet device with a/Al simple vertical structure and a preparation method thereof. Based on NiO/beta-Ga 2 O 3 The heterojunction ultraviolet detector comprises a substrate, an anode layer, a p-NiO thin film layer and n-beta-Ga from bottom to top in sequence 2 O 3 A thin film layer, and a cathode layer. The preparation method comprises cleaning the substrate, sputtering the p-NiO thin film layer, and sputtering n-beta-Ga 2 O 3 Sputtering the thin film layer and evaporating an Al cathode layer. The device of the invention has good sensitivity to ultraviolet light and excellent device performance.)

1. Based on NiO/beta-Ga₂O₃The heterojunction ultraviolet detector is characterized by sequentially comprising a substrate, an anode layer, a p-NiO thin film layer and n-beta-Ga from bottom to top₂O₃A thin film layer, and a cathode layer.

2. NiO/beta-Ga based on claim 1₂O₃The ultraviolet detector of heterojunction is characterized in that an ITO glass substrate is formed by a substrate and an anode layer, and a cathode layer is an Al electrode.

3. NiO/beta-Ga based on claim 1₂O₃The heterojunction ultraviolet detector is characterized in that the preparation method of the detector specifically comprises the following steps:

s1, cleaning substrate: cleaning and drying the substrate to remove surface dirt and increase the uniformity and adhesiveness of the film;

s2, sputtering of the p-NiO thin film layer: putting the substrate into a magnetron sputtering device, and pumping the substrate to a vacuum degree lower than 8.0 multiplied by 10^-4After Pa, setting the sputtering pressure to be 0.4-0.6Pa, the sputtering power to be 200W, and performing timed sputtering for 55-65min after pre-sputtering for 5min to prepare a p-NiO film layer with the film thickness of 80-120 nm;

S3，n-β-Ga₂O₃sputtering of a thin film layer: sputtering according to the step S3, setting the sputtering pressure at 0.6-0.8Pa, the sputtering power at 200W and the sputtering time at 55-65min, and preparing n-beta-Ga₂O₃The film layer is 70-110nm thick;

s4, evaporation of cathode layer: in n-beta-Ga₂O₃And evaporating a cathode layer on the surface by using a mask plate.

Technical Field

The invention belongs to the technical field of photoelectricity, and particularly relates to a photoelectric sensor with ITO/p-NiO/n-beta-Ga₂O₃An ultraviolet device with a/Al simple vertical structure and a preparation method thereof.

Background

Based on wide-bandgap oxide halvesThe photoelectric detector prepared by the conductor material has the advantages that the traditional SiC-based and GaN-based detectors do not have: difficult oxidation, small size, sensitive reaction, easy operation and the like. So far, many researchers have developed the materials including ZnO and TiO₂、SnO₂、NiO、Ga₂O₃And the like, having different structures. Wherein Ga₂O₃Stabilized phase of beta-Ga₂O₃The material is a direct band gap semiconductor material with a super-wide forbidden band width (4.9eV), is simple to grow, and has high photoelectric response characteristic only for an ultraviolet light wave band, so the material becomes a preferred material for developing deep ultraviolet devices in recent years. In order to optimize the device performance of oxide-based ultraviolet photodetectors, a heterojunction device may be formed by combining two oxide semiconductor materials. NiO is a popular p-type material for heterojunction devices in recent years, as a few intrinsic p-type wide band gap (3.6eV) semiconductor materials. And Ga₂O₃The lattice mismatch degree of the NiO material and the NiO material is small, and the material has great application potential in the field of ultraviolet detection.

Disclosure of Invention

The invention aims to provide a high-performance ITO/p-NiO/n-beta-Ga alloy₂O₃A device with a/Al simple vertical structure and a preparation method thereof. The performance of the device is effectively improved by using a magnetron sputtering method and post annealing treatment, and the prepared device only has obvious correspondence to an ultraviolet light wave band.

Based on NiO/beta-Ga₂O₃The heterojunction ultraviolet detector is characterized by sequentially comprising a substrate, an anode layer, a p-NiO thin film layer and n-beta-Ga from bottom to top₂O₃A thin film layer, and a cathode layer.

The substrate and the anode layer form an ITO glass substrate, and the cathode layer is an Al electrode.

The NiO/beta-Ga base₂O₃The preparation method of the heterojunction ultraviolet detector comprises the following steps:

s1, cleaning substrate: cleaning and drying the substrate to remove surface dirt and increase the uniformity and adhesiveness of the film;

s2, sputtering of the p-NiO thin film layer: putting the substrate into a magnetron sputtering device, and pumping the substrate to a vacuum degree lower than 8.0 multiplied by 10^-4After Pa, setting the sputtering pressure to be 0.4-0.6Pa, the sputtering power to be 200W, and performing timed sputtering for 55-65min after pre-sputtering for 5min to prepare a p-NiO film layer with the film thickness of 80-120 nm;

S3，n-β-Ga₂O₃sputtering of a thin film layer: sputtering according to the step S3, setting the sputtering pressure at 0.6-0.8Pa, the sputtering power at 200W and the sputtering time at 55-65min, and preparing n-beta-Ga₂O₃The film layer is 70-110nm thick;

s4, evaporation of cathode layer: in n-beta-Ga₂O₃And evaporating a cathode layer on the surface by using a mask plate.

Silver paste lead-out wires are coated on the cathode layer and are respectively used as bottom electrodes and top electrodes.

Ga2O3 is gallium sesquioxide; NiO is nickel oxide.

The invention has the technical effects and advantages that:

(1) under the condition of not adding additional substrate temperature, polycrystalline p-NiO and n-beta-Ga can be prepared₂O₃The film is uniform in surface.

(2) The preparation of the two heterogeneous layers adopts the same method, namely a magnetron sputtering method, and the preparation process is simple and the cost is low.

(3) Has ITO/p-NiO/n-beta-Ga₂O₃The device with the Al simple vertical structure has good sensitivity to ultraviolet light and excellent device performance.

Drawings

Fig. 1 is a schematic structural view of a heterojunction device of example 1.

FIG. 2 is an XRD pattern of the p-NiO film of the detector of example 1.

FIG. 3 shows n-. beta. -Ga of example 1₂O₃XRD pattern of the film.

Fig. 4 is a graph showing the results of I-V analysis of the heterojunction device of example 1.

Fig. 5 is the responsivity (R) of the heterojunction device of example 1.

Fig. 6 shows the detectivity (D) of the heterojunction device of example 1.

Wherein, the substrate 1, the anode layer 2, the p-NiO thin film layer 3, n-beta-Ga₂O₃A thin film layer 4, a cathode layer 5, silver paste 6 and a light 7.

Detailed Description

The present invention will be described in further detail with reference to specific embodiments, but it should not be construed that the scope of the present invention is limited to the following examples. Various substitutions and alterations can be made by those skilled in the art and by conventional means without departing from the spirit of the method of the invention described above.