阅读说明：本技术 带隙可调的锡氧化物薄膜制备方法 (Preparation method of tin oxide film with adjustable band gap ) 是由 唐利斌 项金钟 王方 王茺 姬荣斌 于 2019-10-23 设计创作，主要内容包括：带隙可调的锡氧化物薄膜制备方法,本发明涉及光电探测技术领域,具体涉及一种带隙可调的锡氧化物薄膜制备方法。锡氧化物薄膜制备方法,包括湿法清洗、射频磁控溅射、退火步骤。本发明的方法,通过控制氧分压和退火,形成一种混合相锡氧化物薄膜材料,改变了锡氧化物薄膜的结构,对光学带隙进行调制,实现了光学吸收的波段涵盖UVA,UVB,UVC,可实现制备紫外多波段的探测器。(The invention relates to a preparation method of a tin oxide film with adjustable band gap, which relates to the technical field of photoelectric detection, in particular to a preparation method of a tin oxide film with adjustable band gap.)

1. The preparation method of the tin oxide film with adjustable band gap comprises the steps of wet cleaning, radio frequency magnetron sputtering and annealing, and is characterized by comprising the following specific steps:

s1, cleaning the substrate by a wet method to clean the substrate, and drying;

s2, performing radio frequency magnetron sputtering, namely putting the substrate into magnetron sputtering equipment, and sputtering the film under the partial pressures of oxygen of 8%, 10% and 0% respectively when the vacuum degree of the equipment reaches below 6.0 x 10 < -4 > pa;

wherein, the oxygen partial pressure is oxygen gas flow/total gas flow of oxygen and argon;

s3, annealing, wherein the annealing is carried out in the atmosphere, the annealing temperature is 250-300 ℃, and the annealing time is 30-60 min.

Technical Field

The invention relates to the technical field of photoelectric detection, in particular to a preparation method of tin oxide film with adjustable band gap.

Background

Human eyes do not recognize ultraviolet wave bands in electromagnetic spectrum, and need to prepare photoelectric detectors to be applied to the fields of military exploration, fire detection, ozone monitoring, chemical analysis and the like. However, the photon energy of ultraviolet light is relatively high, so that most materials for preparing the ultraviolet detector are wide-bandgap semiconductors. Common material systems are ZnO and Ga₂O₃SiC, GaN, MgO, and the like. With the rapid development of this field, new photoelectric detection materials, such as stannous oxide (SnO) and stannic oxide (SnO), are emerging continuously₂). SnO is taken as a P-type semiconductor material, and the direct band gap is 2.7 eV. The main reasons why SnO has p-type conductivity are the existence of tin vacancies and the oxidation state of Sn²⁺The SnO occupies interstitial positions of oxygen atoms, and the 2p energy level of oxygen and the 5s energy level of tin of the SnO are both positioned near the maximum value of Valence Band (VBM), so that the energy levels are relatively close to each other, orbital hybridization is easy, and further the hole mobility is enhanced, which is also the reason why the p-type metal oxide is scarce. Tin oxide (SnO) having the same elemental composition but different proportions₂) The tin oxide film is a typical n-type metal oxide semiconductor material, has a direct band gap of 3.6eV, has excellent performance, and is widely applied to the fields of photodetectors, catalysis, gas sensors, energy storage, solar cells and the like by .

The currently-described methods for preparing tin oxide mainly include electrostatic spinning, pulsed laser deposition, hydrothermal method, molecular beam epitaxy, magnetron sputtering, and the like. Compared with other methods, the magnetron sputtering method has the advantages of simple operation, good uniformity, high experimental repeatability and the like, so the method is selected to realize the preparation of the tin oxide film, the photoelectric property of the tin oxide film is optimized, and the preparation of the tin oxide film with adjustable band gap is realized.

Disclosure of Invention

The invention aims to provide tin oxide film preparation methods, which effectively modulate the band gap of a tin oxide film by controlling the oxygen partial pressure and the annealing process, thereby optimizing the photoelectric property of the tin oxide film.

The preparation method of the tin oxide film with the adjustable band gap comprises the steps of wet cleaning, radio frequency magnetron sputtering and annealing, and is characterized by comprising the following specific steps:

s1, cleaning the substrate by a wet method to clean the substrate, and drying;

s2, radio frequency magnetron sputtering, putting the substrate into a magnetron sputtering device, and enabling the vacuum degree of the device to reach 6.0 multiplied by 10^-4Sputtering the film under oxygen partial pressure of 8%, 10% and 0% respectively when pa is lower;

wherein, the oxygen partial pressure is oxygen gas flow/total gas flow of oxygen and argon;

s3, annealing, wherein the annealing is carried out in the atmosphere, the annealing temperature is 250-300 ℃, and the annealing time is 30-60 min.

According to the method, mixed-phase tin oxide thin film materials are formed by controlling oxygen partial pressure, selecting 8%, 10% and 0% oxygen partial pressure and annealing, the structure of the tin oxide thin film is changed, the optical band gap is modulated, the optical absorption wave bands cover UVA, UVB and UVC, the ultraviolet multiband detector can be prepared, the tin oxide thin film can be prepared under other oxygen partial pressure, the regulation and control effect on the optical band gap is not large, and the response to the ultraviolet wave bands cannot be realized.

The preparation method of the tin oxide film has lower preparation temperature, and realizes the preparation of the tin oxide film with low energy consumption. The preparation process is simple and convenient, the operation is feasible, and the prepared tin oxide film has excellent photoelectric property.

Drawings

FIG. 1 is a film XRD pattern of the tin oxide film produced;

A. b, C represent oxygen partial pressures of 8%, 10%, 0%, respectively.

Fig. 2 is a TEM image of the tin oxide thin film obtained in example 1.

FIG. 3 is an AFM image of the tin oxide film prepared in example 1 before annealing.

FIG. 4 is an AFM image of the tin oxide film obtained in example 1 after annealing.

Fig. 5 is an optical band gap diagram of the tin oxide thin film obtained.

Detailed Description