static eliminating device and method and electronic scanning microscope

文档序号:1580176 发布日期:2020-01-31 浏览:34次 中文

阅读说明:本技术 一种静电消除装置和方法以及电子扫描显微镜 (static eliminating device and method and electronic scanning microscope ) 是由 汪金凤 于 2019-10-25 设计创作,主要内容包括:本发明公开了一种静电消除装置,通过接地部件、第一静电传输部件以及第二静电传输部件之间的配合来对晶圆表面的静电电荷残留进行释放,避免由于静电无法释放完全导致影响后续制程的情况产生。其中所述第一静电传输部件设置在所述接地部件上,所述第二静电传输部件设置在所述晶圆表面。本发明提供的装置的硬件成本与现有技术比较相对较低,且操作方法简单。本发明还提出一种电子扫描显微镜,可在电子扫描显微镜上安装可移动的导电pin针,在电子扫描显微镜量测结束后,通过导电pin针接触晶圆的方式将晶圆上残留的静电电荷导出。且不改变晶圆原有的制程,也无需另设机台。本发明还提出一种静电消除方法,利用所述装置。(The invention discloses electrostatic elimination devices, which release electrostatic charge residue on the surface of a wafer through the cooperation of a grounding part, a th electrostatic transmission part and a second electrostatic transmission part, and avoids the situation that the subsequent process is influenced because static electricity cannot be completely released, wherein the th electrostatic transmission part is arranged on the grounding part, and the second electrostatic transmission part is arranged on the surface of the wafer.)

electrostatic eliminating device for eliminating electrostatic charges on the surface of a wafer, comprising a grounding part, a th electrostatic transmission part and a second electrostatic transmission part;

the th electrostatic transmission component is arranged on the grounding component, and the second electrostatic transmission component is arranged on the surface of the wafer;

when the th electrostatic transmission component is contacted with the second electrostatic transmission component, the electrostatic charge on the surface of the wafer passes through the second electrostatic transmission component, the th electrostatic transmission component and the grounding component in sequence, and the grounding component is grounded to lead out the electrostatic charge on the surface of the wafer.

2. The kinds of static elimination device of claim 1, wherein the th electrostatic transmission component comprises a conductive pin, when the conductive pin contacts the second electrostatic transmission component, the electrostatic charges on the surface of the wafer sequentially pass through the second electrostatic transmission component and the conductive pin and are transmitted to the grounding component.

3. The kinds of static elimination device of claim 2, wherein the number of said conductive pins is plural.

4. The kinds of static elimination device of claim 2, wherein the second static electricity transmission component comprises a conductive pad, when the conductive pin contacts with the conductive pad, the static electricity on the wafer surface passes through the conductive pad, the conductive pin and the grounding component in sequence.

5. The electrostatic elimination device of claim 4, wherein the conductive pads are disposed within the dicing lines of the wafer.

6. The kinds of static elimination device of claim 4, wherein the number of the conductive pads is plural, and the conductive pads are arranged on the wafer at intervals.

7. The kinds of static elimination device of claim 6, wherein the number of the conductive pads is 7.

8. The static elimination device of wherein the ground component comprises a drive component coupled to the electrostatic delivery component and configured to drive the electrostatic delivery component toward or away from the second electrostatic delivery component.

A scanning electron microscope of , comprising the grounding assembly of any of claims 1-7 through and a electrostatic transfer assembly.

10, A method for eliminating static electricity, wherein the static electricity eliminating apparatus of any of claims 1 to 7 is used.

11. The method of electrostatic elimination of claim 10, wherein the method comprises:

s1: disposing the second electrostatic delivery component on the wafer;

s2, the grounding part drives the electrostatic transmission part to contact with the second electrostatic transmission part;

the grounding part drives the th electrostatic transmission part away from the second electrostatic transmission part S3.

12. The method of eliminating static electricity of claim 11, wherein the S2 includes:

s21, setting the contact time of the th electrostatic transmission component and the second electrostatic transmission component;

s22, the grounding part drives the electrostatic transmission part to contact with the second electrostatic transmission part;

and S23, judging whether the contact time of the grounding component for driving the electrostatic transmission component and the second electrostatic transmission component is equal to the set contact time, if so, entering S3, and if not, returning to S22.

Technical Field

The invention relates to the field of wafer manufacturing, in particular to static elimination devices and methods and an electronic scanning microscope.

Background

With the development of semiconductor technology, the control of defects in wafer processing is becoming more and more strict, however, conventional optical defect inspection cannot meet the defect inspection work in wafer processing. The scanning electron microscope has the advantages of high resolution, three-dimensional image, component analysis, electrical defect finding and the like, and thus, the scanning electron microscope is an important tool for analyzing defects in wafer manufacturing processes.

The principle of the electron scanning microscope is that an electron gun 1 emits electrons, the electrons impact on the surface of an object and the orbital electrons or atomic nuclei of surface atoms to interact to form secondary electrons and backscattered electrons, and finally a detector 2 simulates and forms an image by collecting the secondary electrons or the backscattered electrons, as shown in fig. 1, because the electron scanning microscope scans and images by using an electron beam, charges are left on a wafer 3 after being scanned by the electron scanning microscope, and for a layer (layer) with poor conductivity on the wafer, such as 65NOR SPA1 ASI layer, the wafer back has an ONO (Oxide-Nitride-Oxide) structure, which causes difficulty in releasing electrons and influences on the following process, thereby causing wafer defects.

Patent CN109451642A discloses static eliminating devices and methods for reducing static charge residue on the surface of a wafer, where the devices include a static eliminating unit and a housing unit, where the housing unit has housing cavities for housing the wafer, the housing unit has at least openings communicated with the housing cavities, the static eliminating unit is fixedly connected in the housing cavities, and the static eliminating unit is used to provide ionized positive and negative ions to eliminate static on the wafer in a non-vacuum environment.

Therefore, there is a need to propose solutions for static elimination that are low in hardware cost and simple in operation.

Disclosure of Invention

The invention aims to provide static electricity eliminating devices and methods and an electronic scanning microscope, which are used for solving the problems of high cost, complex operation flow and the like due to the fact that a plurality of hardware supports are needed in the prior art.

In order to solve the above technical problems, an th aspect of the present invention provides a electrostatic eliminating apparatus for eliminating electrostatic charges on a wafer surface, including a grounding component, a th electrostatic transmission component and a second electrostatic transmission component;

the th electrostatic transmission component is arranged on the grounding component, and the second electrostatic transmission component is arranged on the surface of the wafer;

when the th electrostatic transmission component is contacted with the second electrostatic transmission component, the electrostatic charge on the surface of the wafer passes through the second electrostatic transmission component, the th electrostatic transmission component and the grounding component in sequence, and the grounding component is grounded to lead out the electrostatic charge on the surface of the wafer.

Optionally, the th electrostatic transmission component includes a conductive pin, and when the conductive pin contacts the second electrostatic transmission component, the electrostatic charge on the wafer surface passes through the second electrostatic transmission component, the conductive pin, and the grounding component in sequence.

Optionally, the number of the conductive pin needles is multiple.

Optionally, the second electrostatic transmission component includes a conductive pad, and when the conductive pin contacts the conductive pad, the electrostatic charges on the surface of the wafer sequentially pass through the conductive pad and the conductive pin and are transferred to the grounding component.

Optionally, the conductive pads are disposed within the dicing lines of the wafer.

Optionally, the number of the conductive pads is multiple, and the conductive pads are arranged on the wafer at intervals.

Optionally, the number of the conductive pads is 7.

Optionally, the grounding component includes driving component, and the driving component is connected to the th electrostatic transmission component and is configured to drive the th electrostatic transmission component to move closer to or away from the second electrostatic transmission component.

The second aspect of the present invention provides electron scanning microscopes, which include the grounding component described in any of the above-mentioned characteristic descriptions and a electrostatic transmission component.

The third aspect of the present invention also proposes kinds of static elimination methods, which utilize the static elimination device described in any of the above-mentioned characteristic descriptions.

Optionally, the method includes:

s1: disposing the second electrostatic delivery component on the wafer;

s2, the grounding part drives the electrostatic transmission part to contact with the second electrostatic transmission part;

the grounding part drives the th electrostatic transmission part away from the second electrostatic transmission part S3.

Optionally, the S2 includes:

s21, setting the contact time of the th electrostatic transmission component and the second electrostatic transmission component;

s22, the grounding part drives the electrostatic transmission part to contact with the second electrostatic transmission part;

and S23, judging whether the contact time of the grounding component for driving the electrostatic transmission component and the second electrostatic transmission component is equal to the set contact time, if so, entering S3, and if not, returning to S22.

The invention provides static elimination devices, which are used for eliminating static charges on the surface of a wafer, and are different from the prior art in that the residual static charges on the surface of the wafer are released through the cooperation among a grounding component, a th static transmission component and a second static transmission component, so that the condition that the subsequent process is influenced because static electricity cannot be completely released is avoided.

In addition, the second electrostatic transmission component can be a conductive gasket, and the conductive gasket can be arranged in the cutting line of the wafer to protect the structure of the wafer.

The invention also provides types of electron scanning microscopes, which can install a movable conductive pin on the electron scanning microscope by using the grounding part and electrostatic transmission part in the device, and can lead out the residual electrostatic charges on the wafer by the way that the conductive pin contacts the wafer after the measurement of the electron scanning microscope is finished.

The invention also provides electrostatic elimination methods, which can preset the contact time between the electrostatic transmission component and the second electrostatic transmission component according to the actual situation of the wafer to ensure the complete discharge of electrostatic charge.

Drawings

FIG. 1 is a schematic diagram of a prior art scanning electron microscope;

FIG. 2 is a schematic structural diagram of types of static electricity eliminating devices according to an embodiment of the present invention ;

FIG. 3 is a schematic view of a wafer structure according to an embodiment of the present invention;

FIG. 4 is a schematic view of a wafer structure according to another embodiment of the invention;

FIG. 5 is a flow chart of a static elimination method according to yet another embodiment of the present invention;

wherein, in fig. 1: 1-electron gun, 2-detector, 3-wafer;

in FIGS. 2-4, 10-ground, 20- th electrostatic transfer, 30-second electrostatic transfer, 40-wafer, 401-scribe, 50-electrostatic charge, 60-drive, 70-support.

Detailed Description

The following describes in more detail embodiments of the present invention with reference to the schematic drawings. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.

In the description of the present invention, it is to be understood that the terms "center", "upper", "lower", "left", "right", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.

Thus, a feature defined as "", "second" may explicitly or implicitly include or more of that feature.

As shown in fig. 1, an th aspect of the present invention provides electrostatic discharge apparatuses for discharging electrostatic charges 50 on a surface of a wafer 40, including a grounding member 10, a th electrostatic transfer member 20 and a second electrostatic transfer member 30, wherein the th electrostatic transfer member 20 is disposed on the grounding member 10, and the second electrostatic transfer member 30 is disposed on a surface of the wafer 40, when the th electrostatic transfer member 20 contacts the second electrostatic transfer member 30, the electrostatic charges 50 on the surface of the wafer 40 sequentially pass through the second electrostatic transfer member 30, the th electrostatic transfer member 20 and the grounding member 10, and the grounding member 10 is grounded to lead out the electrostatic charges 50 on the surface of the wafer 40.

Compared with the prior art, the electrostatic charge 50 residue on the surface of the wafer 40 is released through the cooperation among the grounding part 10, the th electrostatic transmission part 20 and the second electrostatic transmission part 30, so as to avoid the situation that the subsequent process is affected due to the static electricity which cannot be completely released, wherein the th electrostatic transmission part 20 is arranged on the grounding part 10, and the second electrostatic transmission part 30 is arranged on the surface of the wafer 40.

, the electrostatic transmission component 20 can be configured as a conductive pin, when the conductive pin contacts the second electrostatic transmission component 30, the electrostatic charge 50 on the surface of the wafer 40 sequentially passes through the second electrostatic transmission component 30 and the conductive pin and is transmitted to the grounding component 10, and the grounding component 10 is grounded, so the electrostatic charge 50 on the surface of the wafer 40 can be led out.

Optionally, the number of the conductive pins is multiple, as shown in fig. 2, in the embodiment of the present invention, the number of the conductive pins is 5, but is not limited to 5, and may be more, which specifically needs to be selected according to the actual situation of the wafer 40. For example, the number of the conductive pins can be adjusted according to the size of the wafer 40. If the wafer 40 is large, the number of the conductive pins is correspondingly increased, and if the wafer 40 is small, the number of the conductive pins is correspondingly reduced. More conductive pins can effectively reduce the time required for eliminating the electrostatic charge 50 on the surface of the wafer 40, which of course means an increase in hardware cost, and therefore need to be selected according to actual needs, and is not limited herein.

Alternatively, as shown in fig. 2, the second electrostatic transmission component 30 includes a conductive pad (i.e., a conductive pad), and when the conductive pin contacts the conductive pad, the electrostatic charge 50 on the surface of the wafer 40 sequentially passes through the conductive pad, the conductive pin, and the grounding component 10.

the conductive pads may be disposed within scribe lines 401 of the wafer 40 as shown in FIGS. 3 and 4 the conductive pads are disposed within scribe lines 401 of the wafer 40 to protect the structure of the wafer 40.

In the embodiment of the present invention, the number of the conductive pads is 7, that is, the conductive pads are disposed at 7 positions on the wafer 40, it should be understood by those skilled in the art that the number of the conductive pads may be other numbers, and the specific number may be selected according to actual needs, for example, the number of the conductive pads may be appropriately adjusted according to the size of the wafer 40, if the wafer 40 is larger, the number of the conductive pads may be correspondingly increased, and if the wafer 40 is smaller, the number of the conductive pads may be correspondingly decreased.

Further , as shown in fig. 2, the grounding device 10 comprises a driving device 60, the driving device 60 is connected to the th electrostatic transfer device 20 and is configured to drive the th electrostatic transfer device 20 to move closer to or away from the second electrostatic transfer device 30. the driving device 60 may be controlled by software to further control the motion of the rd electrostatic transfer device 20, the contact time between the th electrostatic transfer device 20 and the second electrostatic transfer device 30 may be preset according to the actual condition of the wafer 40 to ensure that the electrostatic charge 50 is fully discharged, for example, the contact time between the th electrostatic transfer device 20 and the second electrostatic transfer device 30 may be set in software to 5 seconds according to the actual condition of the wafer 40. when the apparatus performs an electrostatic discharge process on the wafer 40, the driving device 60 drives the th electrostatic transfer device 20 to move closer to the second electrostatic transfer device 30 until the th electrostatic transfer device 20 contacts the second electrostatic transfer device 30, the contact time between the second electrostatic transfer device 20 and the second electrostatic transfer device may be controlled by controlling the electrostatic transfer device 60 to move away from the second electrostatic transfer device 60 to the second electrostatic transfer device 60, the contact position of the wafer 30, which the electrostatic transfer device 60 may be controlled by controlling the electrostatic transfer device 60 to drive the electrostatic transfer device 60 to completely discharge time to drive the second electrostatic transfer device 60 to drive the electrostatic transfer device to be able to be set to completely discharge time to be set to control the electrostatic transfer device 30 to be able to control device to control the electrostatic transfer device 30 to control device 60 to control device to control the electrostatic transfer device to control device 60 to drive the electrostatic transfer device to drive the electrostatic transfer.

Optionally, a support member 70 may also be provided for carrying the wafer 40.

The embodiment of the present invention further provides scanning electron microscopes, including the grounding component 10 and the electrostatic transmission component 20 described in any of items in the above feature descriptions, for example, if the electrostatic transmission component 20 is a conductive pin, a movable conductive pin can be installed on a stage of the scanning electron microscope, and after the measurement of the scanning electron microscope is completed, the electrostatic charge 50 remaining on the wafer 40 is extracted by the way that the conductive pin contacts the wafer 40, and an original process of the wafer 40 is not changed, and an additional stage is not required.

The grounding device 10 can be directly replaced by a stage of the scanning electron microscope, and similarly to the apparatus, a driving device 60 can be disposed on the stage, the driving device 60 is connected to the conductive pins and is used to drive the conductive pins to move toward or away from the conductive pads, the driving device 60 can be controlled by software to further control the actions of the conductive pins, the contact time of the conductive pins with the conductive pads can be preset according to the actual conditions of the wafer 40, and the electrostatic charge 50 can be fully released, for example, the contact time of the conductive pins with the conductive pads can be set to 5 seconds in software according to the actual conditions of the wafer 40, after the wafer 40 is scanned by the scanning electron scanning microscope, the wafer 40 is removed, the driving device 60 drives the conductive pins to move toward the conductive pads until the conductive pins contact the conductive pads, and when the electrostatic charge removal of the conductive pins with the conductive pads reaches 5 seconds, the driving device 60 drives the conductive pins to move away from the conductive pads, and the electrostatic charge removal of the wafer 40 can be fully controlled by the driving device 60.

The embodiment of the invention also provides static elimination methods, which utilize the static elimination device described in any in the above characteristic description.

Optionally, as shown in fig. 5, the method may specifically include:

s1: disposing the second electrostatic transfer component 30 on the wafer 40;

s2, the grounding part 10 drives the electrostatic transmission part 20 to contact with the second electrostatic transmission part 30;

s3, the grounding part 10 drives the th electrostatic transmission part 20 away from the second electrostatic transmission part 30.

Optionally, the S2 includes:

s21, setting the contact time of the th electrostatic transmission component 20 and the second electrostatic transmission component 30;

s22, the grounding part 10 drives the electrostatic transmission part 20 to contact with the second electrostatic transmission part 30;

and S23, judging whether the contact time of the grounding part 10 driving the electrostatic transmission part 20 and the second electrostatic transmission part 30 is equal to the set contact time, if so, entering S3, otherwise, returning to S22.

The method of the present invention can preset the contact time between the th electrostatic transmission component 20 and the second electrostatic transmission component 30 according to the actual situation of the wafer 40, so as to ensure the complete discharge of the electrostatic charge 50.

In summary, the present invention provides electrostatic discharge apparatuses for discharging electrostatic charges on a wafer surface, which are different from the prior art in that the grounding component, the th electrostatic transmission component and the second electrostatic transmission component are matched to discharge the electrostatic charges on the wafer surface, thereby preventing the occurrence of a situation that the electrostatic charges cannot be completely discharged to affect the subsequent process.

In addition, the second electrostatic transmission component can be a conductive gasket, and the conductive gasket can be arranged in the cutting line of the wafer to protect the structure of the wafer.

The invention also provides types of electron scanning microscopes, which can install a movable conductive pin on the electron scanning microscope by using the grounding part and electrostatic transmission part in the device, and can lead out the residual electrostatic charges on the wafer by the way that the conductive pin contacts the wafer after the measurement of the electron scanning microscope is finished.

The invention also provides electrostatic elimination methods, which can preset the contact time between the electrostatic transmission component and the second electrostatic transmission component according to the actual situation of the wafer to ensure the complete discharge of electrostatic charge.

In the description herein, reference to the terms " embodiments," " embodiments," "examples," or "specific examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least embodiments or examples of the invention.

The above description is only a preferred embodiment of the present invention, and does not limit the present invention in any way. It will be understood by those skilled in the art that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.

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