阅读说明：本技术 全固态激光光源装置 (All-solid-state laser light source device ) 是由 吉恩才 吕启涛 高云峰 于 2017-12-05 设计创作，主要内容包括：一种全固态激光光源装置,包括半导体泵浦激光器(10)以及沿激光的光路方向依次设置的耦合光纤(20)、耦合透镜组(30)、谐振腔(40)；谐振腔(40)内设有各向异性激光晶体(50)；各向异性激光晶体(50)的吸收光谱包括π偏振方向吸收光谱和σ偏振方向吸收光谱；π偏振方向吸收光谱和σ偏振方向吸收光谱具有峰值泵浦区域(F)以及位于峰值泵浦区域(F)两侧的左翼泵浦区域(L)或者右翼泵浦区域(R),半导体泵浦激光器(10)输出的泵浦光波长λ位于左翼泵浦区域(L)或者右翼泵浦区域(R)。(An all-solid-state laser light source device comprises a semiconductor pump laser (10), and a coupling optical fiber (20), a coupling lens group (30) and a resonant cavity (40) which are sequentially arranged along the optical path direction of laser; an anisotropic laser crystal (50) is arranged in the resonant cavity (40); the absorption spectrum of the anisotropic laser crystal (50) includes a pi-polarization direction absorption spectrum and a sigma-polarization direction absorption spectrum; the pi-polarization-direction absorption spectrum and the sigma-polarization-direction absorption spectrum have a peak pump region (F) and left wing pump regions (L) or right wing pump regions (R) located on both sides of the peak pump region (F), and the wavelength lambda of the pump light output by the semiconductor pump laser (10) is located in the left wing pump regions (L) or the right wing pump regions (R).)

An all-solid-state laser light source device comprises a semiconductor pump laser, a coupling optical fiber, a coupling lens group and a resonant cavity, wherein the coupling optical fiber, the coupling lens group and the resonant cavity are sequentially arranged along the optical path direction of laser; an anisotropic laser crystal is arranged in the resonant cavity; the absorption spectrum of the anisotropic laser crystal comprises a pi polarization direction absorption spectrum and a sigma polarization direction absorption spectrum; the pi polarization direction absorption spectrum and the sigma polarization direction absorption spectrum are provided with a peak value pumping area and a left wing pumping area or a right wing pumping area which are positioned at two sides of the peak value pumping area, and the wavelength lambda of the pumping light output by the semiconductor pumping laser is positioned in the left wing pumping area or the right wing pumping area.

The all-solid-state laser light source device according to claim 1, wherein the resonant cavity is a flat cavity, a flat concave cavity, a folded cavity, a ring cavity or an unstable cavity.

The all-solid-state laser light source device according to claim 1, wherein the host material of the anisotropic laser crystal is YVO₄、YLiF₄、YAlO₃Or KGd (WO)₄)。

The all-solid-state laser light source device according to claim 1, wherein the dopant ion of the anisotropic laser crystal is Yb³⁺、Nd³⁺、Er³⁺、Tm³⁺Or Ho³⁺Ions.

The all-solid-state laser light source device according to claim 1, wherein the anisotropic laser crystal is a Ho: and the YLF crystal is cut along the direction of the a axis.

The all-solid-state laser light source device according to claim 5, wherein the Ho: ho in YLF crystal³⁺The doping concentration was 0.5%.

The all-solid-state laser light source device according to claim 6, wherein the Ho: the YLF crystal has a length of 2cm and a cross-sectional dimension of 4mm by 4 mm.

The all-solid-state laser light source device according to claim 7, wherein the semiconductor pump laser outputs a pump light with a wavelength λ of 1905 nm.

The all-solid-state laser light source device according to claim 1, wherein the semiconductor pump laser is in optical path communication with the coupling lens group through the coupling fiber, so that the pump light output by the semiconductor pump laser is coupled by the coupling fiber and then input into the coupling lens group.

The all-solid-state laser light source device according to claim 9, wherein a line width of the pump light is less than 2 nm.