阅读说明：本技术 一种氧化镓纳米晶薄膜日盲紫外探测器及其制备方法 (Gallium oxide nanocrystalline film solar blind ultraviolet detector and preparation method thereof ) 是由 杨陈 张进 蔡长龙 邵雨 于 2019-09-19 设计创作，主要内容包括：本发明涉及对于氧化镓纳米晶薄膜在日盲紫外光电探测方面的应用,具体涉及一种氧化镓纳米晶薄膜日盲紫外探测器及其制备方法。本发明采用单晶Si作为衬底,并采用电子束蒸发技术,在其上先沉积SiO<Sub>2</Sub>薄膜隔离层；然后再沉积Ga<Sub>2</Sub>O<Sub>3</Sub>薄膜日盲紫外吸收层,经过退火处理使吸收层形成纳米晶结构；再通过电子束蒸发及快速热处理技术将Au/Ti双层金属叉指电极制备于吸收层上,即可得到成本低廉、工艺要求简单、重复性好、可大规模制造且具有良好光电响应的日盲紫外光探测器件。(The invention relates to application of a gallium oxide nanocrystalline film in solar blind ultraviolet photoelectric detection, in particular to a solar blind ultraviolet detector of the gallium oxide nanocrystalline film and a preparation method thereof. The invention adopts single crystal Si as a substrate and electron beam evaporation technology to deposit SiO on the substrate 2 A thin film isolation layer; then depositing Ga again 2 O 3 A thin film solar blind ultraviolet absorption layer, wherein a nanocrystalline structure is formed on the absorption layer through annealing treatment; preparing the Au/Ti double-layer metal interdigital electrode on the absorption layer by electron beam evaporation and rapid heat treatment technologyThe solar blind ultraviolet detector has the advantages of low cost, simple process requirement, good repeatability, large-scale manufacture and good photoelectric response.)

1. A method for preparing a gallium oxide nanocrystalline film solar blind ultraviolet detector is characterized by comprising the following steps: the method comprises the following steps:

1) using monocrystalline silicon as substrate, adopting electron beam evaporation mode to deposit a layer of SiO with thickness of 50-300nm on Si substrate₂A film;

2) a layer of Ga with the thickness of 100-400nm is deposited under the conditions of heating temperature of 50 ℃ and filament current of a 5Am gun₂O₃A film;

3) taking out the film sample obtained in the step 2), placing the film sample in an annealing furnace, and carrying out annealing treatment at the temperature of 600-₂O₃Crystallization of thin films to form beta-Ga₂O₃Phase (1);

4) covering an interdigital electrode mask plate on the Ga obtained in the step 3)₂O₃The surface of the film and the surface of the sample holder are fixed together, a layer of titanium film with the thickness of 100nm is deposited on the surface of the sample on the sample holder by adopting an electron beam evaporation mode, and then a layer of Au film with the thickness of 100nm is deposited to form a double-layer metal interdigital electrode;

5) and placing the double-layer metal interdigital electrode in a rapid annealing furnace, and performing rapid annealing on the electrode for 180s at the temperature of 200-500 ℃ to obtain the solar blind ultraviolet detector.

2. The gallium oxide nanocrystalline thin film solar blind ultraviolet detector prepared by the preparation method of claim 1.

Technical Field

The invention relates to application of a gallium oxide nanocrystalline film in solar blind ultraviolet photoelectric detection, in particular to a solar blind ultraviolet detector of the gallium oxide nanocrystalline film and a preparation method thereof.

Background

Gallium oxide (Ga)₂O₃) The material is a novel wide bandgap semiconductor material, and shows wide application prospect in the preparation of semiconductor photoelectric devices due to excellent physical properties and good chemical stability; particularly, the forbidden band width reaches 4.9eV, and the absorption wavelength of light is less than 280nm, so that the fluorescent material becomes one of the first choice materials for preparing solar blind ultraviolet detection devices.

Gallium oxide currently used for solar blind ultraviolet detection is mainly divided into single crystal blocks, nanostructures and thin film materials. Ga₂O₃The single crystal material requires extremely high equipment and process requirements during the preparation process, thus resulting in expensive preparation costs. The nanowire structure can bring excellent photoelectric properties, but the nanowires or nanobelts grown in the preparation process are often disordered in orientation, intertwined with each other, different in size and low in mechanical strength, so that the difference from the practical application is large.

Ga based on the mature development of thin film fabrication technology in recent years₂O₃The film solar blind ultraviolet detector becomes the mainstream mode for the development of the detector, but at present, Ga₂O₃The film solar blind ultraviolet detector is mainly made of expensive sapphire and Ga₂O₃The single crystal material is an epitaxial substrate and is prepared by adopting an epitaxial technology with higher process control requirements, so that the improvement of the preparation efficiency of the device and the reduction of the preparation cost are restricted.

Disclosure of Invention

In view of the above, the invention provides a gallium oxide nanocrystalline thin film solar blind ultraviolet detector and a preparation method thereof, in order to solve the problems of complex preparation process and high cost in the process of preparing the gallium oxide solar blind ultraviolet detector.

In order to solve the problems in the prior art, the technical scheme of the invention is as follows: a method for preparing a gallium oxide nanocrystalline film solar blind ultraviolet detector is characterized by comprising the following steps: the method comprises the following steps:

1) monocrystalline silicon is taken as a substrate, an electron beam evaporation mode is adopted,depositing a layer of SiO 50-300nm thick on Si substrate₂A film;

2) a layer of Ga with the thickness of 100-400nm is deposited under the conditions of heating temperature of 50 ℃ and filament current of a 5Am gun₂O₃A film;

3) taking out the film sample obtained in the step 2), placing the film sample in an annealing furnace, and carrying out annealing treatment at the temperature of 600-₂O₃Crystallization of thin films to form beta-Ga₂O₃Phase (1);

4) covering an interdigital electrode mask plate on the Ga obtained in the step 3)₂O₃The surface of the film and the surface of the sample holder are fixed together, a layer of titanium film with the thickness of 100nm is deposited on the surface of the sample on the sample holder by adopting an electron beam evaporation mode, and then a layer of Au film with the thickness of 100nm is deposited to form a double-layer metal interdigital electrode;

5) and placing the double-layer metal interdigital electrode in a rapid annealing furnace, and performing rapid annealing on the electrode for 180s at the temperature of 200-500 ℃ to obtain the solar blind ultraviolet detector.

The gallium oxide nanocrystalline thin film solar blind ultraviolet detector prepared by the preparation method.

Compared with the prior art, the invention has the following advantages:

1) the invention adopts the electron beam evaporation technology combined with the heat treatment annealing process to prepare Ga₂O₃The polycrystalline film has the advantages of low preparation cost, simple process requirement, good repeatability, large-scale manufacturing and the like;

2) the invention firstly prepares a solar blind ultraviolet detector on a low-cost monocrystal Si substrate through SiO₂The barrier layer is introduced to shield the photoelectric response of the substrate to incident light; secondly, nanocrystalline Ga is adopted₂O₃The film is used as an absorption layer of the device for solar blind ultraviolet, so that the difficulty of the film preparation process and the dependence on expensive equipment are reduced;

3) all film layers in the solar blind ultraviolet detection device prepared by the invention comprise SiO₂Barrier layer, Ga₂O₃The absorption layer and the Au/Ti metal electrode layer are deposited by the same preparation technology, thereby simplifyingThe preparation process improves the preparation efficiency.

Description of the drawings:

FIG. 1 is a cross-sectional view of a solar blind ultraviolet detection device structure;

FIG. 2 is a schematic perspective view of a solar blind ultraviolet detection device;

FIG. 3 Ga at different annealing temperatures₂O₃XRD test results of the film;

FIG. 4 calculation of Ga after annealing at different temperatures according to XRD test results₂O₃The variation of the grain size of the film;

FIG. 5 is a graph showing the response of the device prepared in example 5 to UV light;

fig. 6 shows the response of the device prepared in example 6 to uv light.

Detailed Description

The invention provides a preparation method of a gallium oxide nanocrystalline film solar blind ultraviolet detector, which comprises the following steps:

1) using monocrystalline silicon as substrate, adopting electron beam evaporation mode to deposit a layer of SiO with thickness of 50-300nm on Si substrate₂A film;

2) depositing a layer of Ga with the thickness of 100-40nm under the conditions of heating temperature of 50 ℃ and filament beam current of a 5Am gun₂O₃A film;

3) taking out the film sample obtained in the step 2), placing the film sample in an annealing furnace, and carrying out annealing treatment at the temperature of 600-₂O₃Crystallization of thin films to form beta-Ga₂O₃Phase (1); the structure of the crystal phase of the film is shown in FIG. 3, and the grain size of the film is shown in FIG. 4;

4) covering an interdigital electrode mask plate on the Ga obtained in the step 3)₂O₃The surface of the film and the surface of the sample holder are fixed together, a layer of titanium film with the thickness of 100nm is deposited on the surface of the sample on the sample holder by adopting an electron beam evaporation mode, and then a layer of Au film with the thickness of 100nm is deposited to form a double-layer metal interdigital electrode;

5) and (3) placing the double-layer metal interdigital electrode in a rapid annealing furnace, and performing rapid annealing on the electrode at the temperature of 200-500 ℃ for 180s to form good contact between the electrode and the thin film, thereby finally completing the preparation of the solar blind ultraviolet detection device, as shown in figures 1 and 2.

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.