Light-emitting backlight source with single-ring pyramid inclined plane cathode concave-straight arc segment gate control structure
阅读说明：本技术 单环角锥体斜面阴极凹直弧段门控结构的发光背光源 (Light-emitting backlight source with single-ring pyramid inclined plane cathode concave-straight arc segment gate control structure ) 是由 李玉魁 于 2019-09-23 设计创作，主要内容包括：本发明公开了一种单环角锥体斜面阴极凹直弧段门控结构的发光背光源,包括真空封闭体以及位于真空封闭体内的消气剂附属元件；所述的真空封闭体由前透硬玻璃板、后透硬玻璃板和玻璃窄框条构成；在前透硬玻璃板上设有阳极低阻膜电层、阳极灰银外连层和薄发光层,所述的阳极低阻膜电层和阳极灰银外连层相连,所述的薄发光层制作在阳极低阻膜电层上面；在后透硬玻璃板上设有单环角锥体斜面阴极凹直弧段门控结构。具有制作工艺稳定且可靠的、发光背光源的发光亮度可调节性能优异的优点。(The invention discloses a light-emitting backlight source of a monocyclic pyramid inclined plane cathode concave straight arc segment gate control structure, which comprises a vacuum enclosure and an air detraining agent accessory element positioned in the vacuum enclosure; the vacuum closing body consists of a front hard glass plate, a rear hard glass plate and a glass narrow frame strip; the front transparent hard glass plate is provided with an anode low-resistance film electric layer, an anode gray silver external connecting layer and a thin light-emitting layer, the anode low-resistance film electric layer is connected with the anode gray silver external connecting layer, and the thin light-emitting layer is manufactured on the anode low-resistance film electric layer; and a single-ring pyramid inclined plane cathode concave-straight arc section gate control structure is arranged on the rear hard transparent glass plate. The method has the advantages of stable and reliable manufacturing process and excellent brightness adjustability of the light-emitting backlight source.)
1. A light-emitting backlight source of a single-ring pyramid inclined-plane cathode concave-straight arc segment gate control structure comprises a vacuum enclosure and an air detraining agent accessory element positioned in the vacuum enclosure; the vacuum closing body consists of a front hard glass plate, a rear hard glass plate and a glass narrow frame strip; the method is characterized in that: the front transparent hard glass plate is provided with an anode low-resistance film electric layer, an anode gray silver external connecting layer and a thin light-emitting layer, the anode low-resistance film electric layer is connected with the anode gray silver external connecting layer, and the thin light-emitting layer is manufactured on the anode low-resistance film electric layer; and a single-ring pyramid inclined plane cathode concave-straight arc section gate control structure is arranged on the rear hard transparent glass plate.
2. The light-emitting backlight source with a monocyclic pyramid inclined cathode concave-straight arc segment gated structure as claimed in claim 1, wherein: the substrate of the single-ring pyramid inclined plane cathode concave-straight arc gate control structure is a rear transparent hard glass plate; forming a dark and black broken interlayer through the printed insulating slurry layer on the hard glass plate; forming a cathode gray silver outer connecting layer by the printed silver paste layer on the dark black partition interlayer; the printed insulating slurry layer on the cathode silver outer connecting layer forms a cathode ring cone lower layer; the lower surface of the lower layer of the cathode ring cone is a circular plane and is positioned on the cathode gray silver outer connecting layer, the upper surface of the lower layer of the cathode ring cone is a circular plane, the diameter of the lower surface of the lower layer of the cathode ring cone is equal to that of the upper surface, the central vertical line of the upper surface of the lower layer of the cathode ring cone is coincident with that of the upper surface, and the outer side surface of the lower layer of the cathode ring cone is a cylindrical surface; a square hole is arranged in the lower layer of the cathode ring cone, and a cathode inner connecting wire layer is formed on a silver paste layer printed in the square hole; the cathode inner connecting wire layer and the cathode silver-gray outer connecting layer are mutually communicated; the printed silver paste layer on the upper surface of the lower layer of the cathode ring cone forms a cathode inner connecting wire two layer; the cathode inner connecting line two layers and the cathode inner connecting line one layer are communicated with each other, the cathode inner connecting line two layers are in a circular shape and are fully distributed on the upper surface of the cathode ring cone lower layer, and the outer edge of the circular surface of the cathode inner connecting line two layers is flush with the outer edge of the upper surface of the cathode ring cone lower layer; the printed insulating slurry layer on the two layers of the cathode inner connecting wire forms the upper outer layer of the cathode ring cone; the lower surface of the upper outer layer of the cathode ring cone is a plane and is positioned on the two layers of cathode interconnectors, the outer edge of the lower surface of the upper outer layer of the cathode ring cone is not flush with the outer edge of the two layers of cathode interconnectors, the diameter of the outer edge of the lower surface of the upper outer layer of the cathode ring cone is smaller than the diameter of the circular surface of the two layers of cathode interconnectors, the inner edge of the lower surface of the upper outer layer of the cathode ring cone is in a circular ring shape, the central vertical line of the lower surface of the upper outer layer of the cathode ring cone and the central vertical line of the upper surface of the lower layer of the cathode ring cone are mutually overlapped, the outer side surface of the upper outer layer of the cathode ring; the printed silver paste layer on the outer side surface of the upper outer layer of the cathode ring cone forms a cathode cone inclined bottom electrode; the cathode cone inclined bottom electrode is positioned on the outer side face of the upper outer layer of the cathode ring cone, the upper edge of the cathode cone inclined bottom electrode is flush with the upper edge of the outer side face of the upper outer layer of the cathode ring cone, the lower edge of the cathode cone inclined bottom electrode is flush with the lower edge of the outer side face of the upper outer layer of the cathode ring cone, and the cathode cone inclined bottom electrode and the cathode inner connecting wire layer are communicated with each other; the printed insulating slurry layer on the two layers of the cathode inner connecting wire forms an upper inner layer of the cathode ring cone; the lower surface of the inner layer on the cathode ring cone is a circular plane and is positioned on the two layers of cathode interconnectors, the diameter of the lower surface of the inner layer on the cathode ring cone is equal to the diameter of the inner edge of the lower surface of the outer layer on the cathode ring cone, the central vertical line of the lower surface of the inner layer on the cathode ring cone is coincident with the central vertical line of the lower surface of the outer layer on the cathode ring cone, the upper surface of the inner layer on the cathode ring cone is a circular plane, the upper surface and the lower surface of the inner layer on the cathode ring cone are parallel to each other, the central vertical line of the upper surface of the inner layer on the cathode ring cone is coincident with the central vertical line of the lower surface of the inner layer on the cathode ring cone, the outer edge of the lower surface of the inner layer on the cathode ring cone; forming a gate pole broken arc base layer by the printed insulating slurry layer on the dark black broken interlayer; the lower surface of the first gate broken arc base layer is a plane and is positioned on the dark black broken interlayer, a circular hole is formed in the first gate broken arc base layer, the dark black broken interlayer, the cathode gray silver outer connecting layer, the lower layer of the cathode ring cone, the first cathode internal connecting line layer, the second cathode internal connecting line layer, the upper outer layer of the cathode ring cone, the inclined bottom electrode of the cathode cone and the upper inner layer of the cathode ring cone are exposed in the circular hole, and the inner side surface of the first gate broken arc base layer is an upright cylindrical surface; the printed silver paste layer on the upper surface of the gate electrode broken arc base layer forms a gate electrode straight strip electrode lower layer; the lower layer of the gate straight strip electrode is arc-shaped and is positioned on the upper surface of the layer of the gate broken arc base, the front end of the lower layer of the gate straight strip electrode faces the inner side surface of the layer of the circular hole of the gate broken arc base, the rear end of the lower layer of the gate straight strip electrode faces the inner side surface of the layer of the circular hole far away from the gate broken arc base, the front end of the lower layer of the gate straight strip electrode is low in height, the rear end of the lower layer of the gate straight strip electrode is high in height, and the front tail; the printed insulating slurry layer on the lower layer of the gate straight strip electrode forms a gate broken arc base layer II; the printed silver paste layer on the front side surface of the gate electrode broken arc base layer II forms a gate electrode straight strip electrode front layer; the front layer of the gate straight strip electrode is in an inclined straight slope shape and is positioned on the front side surface of the second layer of the gate broken arc base, the front end of the front layer of the gate straight strip electrode faces the inner side surface of the circular hole of the first layer of the gate broken arc base, the rear end of the front layer of the gate straight strip electrode faces the inner side surface of the circular hole of the second layer of the gate broken arc base, the front end of the front layer of the gate straight strip electrode is lower than the gate, the rear end of the front layer of the gate straight strip electrode is higher than the gate, the front tail end of the front layer of the gate straight strip electrode is flush with the inner side surface of the circular hole; the printed silver paste layer on the rear upper surface of the gate electrode broken arc base layer II forms a gate electrode straight strip electrode rear layer; the rear layer of the gate straight strip electrode is planar and is positioned on the rear upper surface of the second layer of the gate arc breaking base, the front end of the rear layer of the gate straight strip electrode faces the inner side surface of the circular hole of the first layer of the gate arc breaking base, the rear end faces the inner side surface of the circular hole far away from the gate arc breaking base, the front tail end of the rear layer of the gate straight strip electrode is connected with the rear tail end of the front layer of the gate straight strip electrode, the rear tail end of the rear layer of the gate straight strip electrode is connected with the lower layer of the gate straight strip electrode, but the rear tail end of the rear layer of the gate straight strip electrode is not connected with the rear tail end of; the insulating slurry layer printed on the dark black broken interlayer forms three layers of gate pole broken arc base; forming a gate electrode ash silver external connecting layer by the printed silver paste layers on the upper surfaces of the three layers of the gate electrode arc breaking bases; the front tail end of the gate electrode gray silver outer connecting layer is connected with the rear tail end of the lower layer of the gate electrode straight strip electrode; forming four layers of gate broken arc groups by the printed insulating slurry layers on the front layer of the gate straight strip electrode and the rear layer of the gate straight strip electrode; the carbon nanotube layer is prepared on the cathode cone inclined bottom electrode.
3. The light-emitting backlight source with a monocyclic pyramid inclined cathode concave-straight arc segment gated structure as claimed in claim 1, wherein: the fixed position of the gate control structure of the cathode concave-straight arc section with the single-ring pyramid inclined plane is a rear transparent hard glass plate.
4. The light-emitting backlight source with a monocyclic pyramid inclined cathode concave-straight arc segment gated structure as claimed in claim 1, wherein: the rear transparent hard glass plate is made of plane borosilicate glass or soda-lime glass.
5. The method for manufacturing a light-emitting backlight source with a monocyclic pyramid inclined cathode concave-straight arc segment gating structure according to claim 1, comprising the following steps:
1) manufacturing a rear transparent hard glass plate: scribing the plane glass to form a rear transparent hard glass plate;
2) manufacturing a dark and broken interlayer: printing insulating slurry on the rear transparent hard glass plate, and forming a dark and black broken interlayer after baking and sintering processes;
3) preparing a cathode gray silver outer connecting layer: printing silver paste on the dark black interlayer, and forming a cathode gray silver external connecting layer after baking and sintering processes;
4) and (3) manufacturing the lower layer of the cathode ring cone: printing insulating slurry on the cathode gray silver outer connecting layer, and forming a cathode ring cone lower layer after baking and sintering processes;
5) manufacturing a cathode inner connecting wire layer: printing silver paste in a square hole in the lower layer of the cathode ring cone, and forming a cathode inner connecting wire layer after baking and sintering processes;
6) and (3) manufacturing two layers of cathode interconnectors: printing silver paste on the upper surface of the lower layer of the cathode ring cone, and forming a cathode inner connecting wire two layer after baking and sintering processes;
7) manufacturing an upper outer layer of the cathode ring cone: printing insulating slurry on the two layers of the cathode interconnector, and forming an upper outer layer of the cathode ring cone after baking and sintering processes;
8) manufacturing a cathode cone inclined bottom electrode: printing silver paste on the outer side surface of the upper outer layer of the cathode ring cone, and forming a cathode cone inclined bottom electrode after baking and sintering processes;
9) manufacturing an upper inner layer of the cathode ring cone: printing insulating slurry on the two layers of the cathode interconnector, and forming an upper inner layer of the cathode ring cone after baking and sintering processes;
10) manufacturing a gate arc breaking base layer: printing insulating slurry on the dark black broken interlayer, and forming a gate broken arc base layer after baking and sintering processes;
11) manufacturing a gate straight strip electrode lower layer: printing silver paste on the upper surface of the gate broken arc base layer, and forming a gate straight strip electrode lower layer after baking and sintering processes;
12) manufacturing a gate arc breaking base layer II: printing insulating slurry on the lower layer of the gate straight strip electrode, and forming a gate broken arc base two layer after baking and sintering processes;
13) manufacturing a gate straight strip electrode front layer: printing silver paste on the front side surface of the second gate arc breaking base layer, and forming a front gate straight strip electrode layer after baking and sintering processes;
14) manufacturing a gate straight strip electrode rear layer: printing silver paste on the rear upper surface of the second gate broken arc base layer, and forming a rear gate straight strip electrode layer after baking and sintering processes;
15) manufacturing three layers of gate pole broken arc base: printing insulating slurry on the dark black broken interlayer, and forming three layers of gate pole broken arc bases after baking and sintering processes;
16) manufacturing a gate electrode gray silver outer connecting layer: printing silver paste on the upper surfaces of the three layers of the gate arc breaking base, and forming a gate electrode silver paste external connecting layer after baking and sintering processes;
17) manufacturing four layers of gate arc breaking bases: printing insulating slurry on the front layer of the gate straight strip electrode and the rear layer of the gate straight strip electrode, and forming a gate broken arc base four layer after baking and sintering processes;
18) cleaning a concave-straight arc section gate control structure of a monocyclic pyramid inclined plane cathode: cleaning the surface of the concave-straight arc gate structure of the inclined cathode of the monocyclic pyramid to remove impurities and dust;
19) manufacturing a carbon nanotube layer: printing carbon nano tubes on the cathode cone inclined bottom electrode to form a carbon nano tube layer;
20) and (3) processing the carbon nanotube layer: post-processing the carbon nanotube layer to improve the field emission characteristic;
21) manufacturing a front transparent hard glass plate: scribing the plane glass to form a front transparent hard glass plate;
22) manufacturing an anode low-resistance film electric layer: etching the tin-indium oxide film layer covering the surface of the front transparent hard glass plate to form an anode low-resistance film electric layer;
23) preparing an anode silver-ash outer connecting layer: printing silver paste on the front transparent hard glass plate, and forming an anode silver-gray outer connecting layer after baking and sintering processes;
24) manufacturing a thin light-emitting layer: printing fluorescent powder on the anode low-resistance film electric layer, and forming a thin light-emitting layer after a baking process;
25) assembling the light-emitting backlight source device: mounting a getter to a non-display area of the front transparent hard glass plate; then, assembling the front hard glass plate, the rear hard glass plate and the glass narrow frame strip together, and fixing by using a clamp;
26) packaging the light-emitting backlight source device: and carrying out packaging process on the assembled light-emitting backlight source device to form a finished product.
6. The method for manufacturing a light-emitting backlight source with a monocyclic pyramid inclined cathode concave-straight arc segment gating structure according to claim 5, wherein the method comprises the following steps: in the step 23, silver paste is printed on the non-display area of the front transparent hard glass plate, and after the baking process, the maximum baking temperature is as follows: 192 ℃, maximum baking temperature holding time: 7.5 minutes; placing the mixture in a sintering furnace for sintering, wherein the maximum sintering temperature is as follows: 532 ℃, maximum sintering temperature holding time: 9.5 minutes.
7. The method for manufacturing a light-emitting backlight source with a monocyclic pyramid inclined cathode concave-straight arc segment gating structure according to claim 5, wherein the method comprises the following steps: in the step 24, phosphor is printed on the anode low-resistance film electric layer of the front transparent hard glass plate, and then the front transparent hard glass plate is placed in an oven for baking, wherein the highest baking temperature is as follows: 152 ℃, maximum baking temperature hold time: 7.5 minutes.
8. The method for manufacturing a light-emitting backlight source with a monocyclic pyramid inclined cathode concave-straight arc segment gating structure according to claim 5, wherein the method comprises the following steps: in step 26, the packaging process includes baking the light-emitting backlight device in an oven; sintering in a sintering furnace; exhausting and sealing off on an exhaust table; baking the getter on a baking machine; and finally, additionally installing pins to form a finished product.
Technical Field
The invention belongs to the field of intercrossing of integrated circuit science and technology, semiconductor science and technology, photoelectron science and technology, microelectronic science and technology, nano science and technology, vacuum science and technology and plane display technology, and relates to the manufacture of plane light-emitting backlight, in particular to the manufacture of plane light-emitting backlight of carbon nano tube cathode, especially to a light-emitting backlight of monocyclic pyramid inclined plane cathode concave straight arc gate control structure and a manufacture process thereof.
Background
The carbon nano tube has good conductive performance, and can emit electrons only depending on the intensity of an external electric field in a proper vacuum environment, so that current is formed. By virtue of the characteristic, the carbon nano tube can be made into a suitable cathode material and applied to a vacuum component. The light-emitting backlight source is a typical vacuum component and is widely applied to large-scale equipment such as a coating platform, an evaporator, a sputtering platform and the like.
However, there are some technical difficulties to be solved urgently in the light-emitting backlight of the three-pole structure. For example, first, the electron emission efficiency of carbon nanotubes is too low. Most of the carbon nanotubes in the manufactured carbon nanotube layer can only emit micro electrons, and even a part of the carbon nanotubes can not emit electrons at all; the effective current cannot be formed without sufficient amount of carbon nanotubes for electron emission, and the luminance of the light emitting backlight cannot be improved. Second, the gate voltage has a weak ability to control electron emission from the carbon nanotube layer. When a proper voltage is applied to the gate, the electron emission quantity of the carbon nanotube can be changed along with the change of the gate voltage, so that the cathode current of the light-emitting backlight source can be regulated. However, in the light-emitting backlight, the cathode current does not strictly increase or decrease with the change of the gate voltage, so that the control capability of the gate to the electron emission capability of the carbon nanotube is poor, and even in some light-emitting backlights, the electron emission of the carbon nanotube cannot be effectively controlled by the gate voltage. Thirdly, the manufacturing area of the carbon nano tube is smaller. There is not enough area for making carbon nanotubes, which means that the number of carbon nanotubes is too small; without a sufficient number of carbon nanotubes for electron emission, a large cathode current cannot be formed at all. These technical difficulties also need to be carefully developed and solved by effective methods.
Disclosure of Invention
The purpose of the invention is as follows: the invention aims to overcome the defects and shortcomings in the light-emitting backlight source and provide the light-emitting backlight source with the monocyclic pyramid inclined plane cathode concave-straight arc segment gate control structure and the manufacturing process thereof, wherein the manufacturing process is stable and reliable, and the light-emitting brightness of the light-emitting backlight source is excellent in adjustability.
The technical scheme is as follows: the invention relates to a light-emitting backlight source of a monocyclic pyramid inclined plane cathode concave straight arc segment gate control structure, which comprises a vacuum enclosure and an air detraining agent accessory element positioned in the vacuum enclosure; the vacuum closing body consists of a front hard glass plate, a rear hard glass plate and a glass narrow frame strip; the front transparent hard glass plate is provided with an anode low-resistance film electric layer, an anode gray silver external connecting layer and a thin light-emitting layer, the anode low-resistance film electric layer is connected with the anode gray silver external connecting layer, and the thin light-emitting layer is manufactured on the anode low-resistance film electric layer; and a single-ring pyramid inclined plane cathode concave-straight arc section gate control structure is arranged on the rear hard transparent glass plate.
Specifically, the substrate of the single-ring pyramid inclined plane cathode concave-straight arc gate control structure is a rear transparent hard glass plate; forming a dark and black broken interlayer through the printed insulating slurry layer on the hard glass plate; forming a cathode gray silver outer connecting layer by the printed silver paste layer on the dark black partition interlayer; the printed insulating slurry layer on the cathode silver outer connecting layer forms a cathode ring cone lower layer; the lower surface of the lower layer of the cathode ring cone is a circular plane and is positioned on the cathode gray silver outer connecting layer, the upper surface of the lower layer of the cathode ring cone is a circular plane, the diameter of the lower surface of the lower layer of the cathode ring cone is equal to that of the upper surface, the central vertical line of the upper surface of the lower layer of the cathode ring cone is coincident with that of the upper surface, and the outer side surface of the lower layer of the cathode ring cone is a cylindrical surface; a square hole is arranged in the lower layer of the cathode ring cone, and a cathode inner connecting wire layer is formed on a silver paste layer printed in the square hole; the cathode inner connecting wire layer and the cathode silver-gray outer connecting layer are mutually communicated; the printed silver paste layer on the upper surface of the lower layer of the cathode ring cone forms a cathode inner connecting wire two layer; the cathode inner connecting line two layers and the cathode inner connecting line one layer are communicated with each other, the cathode inner connecting line two layers are in a circular shape and are fully distributed on the upper surface of the cathode ring cone lower layer, and the outer edge of the circular surface of the cathode inner connecting line two layers is flush with the outer edge of the upper surface of the cathode ring cone lower layer; the printed insulating slurry layer on the two layers of the cathode inner connecting wire forms the upper outer layer of the cathode ring cone; the lower surface of the upper outer layer of the cathode ring cone is a plane and is positioned on the two layers of cathode interconnectors, the outer edge of the lower surface of the upper outer layer of the cathode ring cone is not flush with the outer edge of the two layers of cathode interconnectors, the diameter of the outer edge of the lower surface of the upper outer layer of the cathode ring cone is smaller than the diameter of the circular surface of the two layers of cathode interconnectors, the inner edge of the lower surface of the upper outer layer of the cathode ring cone is in a circular ring shape, the central vertical line of the lower surface of the upper outer layer of the cathode ring cone and the central vertical line of the upper surface of the lower layer of the cathode ring cone are mutually overlapped, the outer side surface of the upper outer layer of the cathode ring; the printed silver paste layer on the outer side surface of the upper outer layer of the cathode ring cone forms a cathode cone inclined bottom electrode; the cathode cone inclined bottom electrode is positioned on the outer side face of the upper outer layer of the cathode ring cone, the upper edge of the cathode cone inclined bottom electrode is flush with the upper edge of the outer side face of the upper outer layer of the cathode ring cone, the lower edge of the cathode cone inclined bottom electrode is flush with the lower edge of the outer side face of the upper outer layer of the cathode ring cone, and the cathode cone inclined bottom electrode and the cathode inner connecting wire layer are communicated with each other; the printed insulating slurry layer on the two layers of the cathode inner connecting wire forms an upper inner layer of the cathode ring cone; the lower surface of the inner layer on the cathode ring cone is a circular plane and is positioned on the two layers of cathode interconnectors, the diameter of the lower surface of the inner layer on the cathode ring cone is equal to the diameter of the inner edge of the lower surface of the outer layer on the cathode ring cone, the central vertical line of the lower surface of the inner layer on the cathode ring cone is coincident with the central vertical line of the lower surface of the outer layer on the cathode ring cone, the upper surface of the inner layer on the cathode ring cone is a circular plane, the upper surface and the lower surface of the inner layer on the cathode ring cone are parallel to each other, the central vertical line of the upper surface of the inner layer on the cathode ring cone is coincident with the central vertical line of the lower surface of the inner layer on the cathode ring cone, the outer edge of the lower surface of the inner layer on the cathode ring cone; forming a gate pole broken arc base layer by the printed insulating slurry layer on the dark black broken interlayer; the lower surface of the first gate broken arc base layer is a plane and is positioned on the dark black broken interlayer, a circular hole is formed in the first gate broken arc base layer, the dark black broken interlayer, the cathode gray silver outer connecting layer, the lower layer of the cathode ring cone, the first cathode internal connecting line layer, the second cathode internal connecting line layer, the upper outer layer of the cathode ring cone, the inclined bottom electrode of the cathode cone and the upper inner layer of the cathode ring cone are exposed in the circular hole, and the inner side surface of the first gate broken arc base layer is an upright cylindrical surface; the printed silver paste layer on the upper surface of the gate electrode broken arc base layer forms a gate electrode straight strip electrode lower layer; the lower layer of the gate straight strip electrode is arc-shaped and is positioned on the upper surface of the layer of the gate broken arc base, the front end of the lower layer of the gate straight strip electrode faces the inner side surface of the layer of the circular hole of the gate broken arc base, the rear end of the lower layer of the gate straight strip electrode faces the inner side surface of the layer of the circular hole far away from the gate broken arc base, the front end of the lower layer of the gate straight strip electrode is low in height, the rear end of the lower layer of the gate straight strip electrode is high in height, and the front tail; the printed insulating slurry layer on the lower layer of the gate straight strip electrode forms a gate broken arc base layer II; the printed silver paste layer on the front side surface of the gate electrode broken arc base layer II forms a gate electrode straight strip electrode front layer; the front layer of the gate straight strip electrode is in an inclined straight slope shape and is positioned on the front side surface of the second layer of the gate broken arc base, the front end of the front layer of the gate straight strip electrode faces the inner side surface of the circular hole of the first layer of the gate broken arc base, the rear end of the front layer of the gate straight strip electrode faces the inner side surface of the circular hole of the second layer of the gate broken arc base, the front end of the front layer of the gate straight strip electrode is lower than the gate, the rear end of the front layer of the gate straight strip electrode is higher than the gate, the front tail end of the front layer of the gate straight strip electrode is flush with the inner side surface of the circular hole; the printed silver paste layer on the rear upper surface of the gate electrode broken arc base layer II forms a gate electrode straight strip electrode rear layer; the rear layer of the gate straight strip electrode is planar and is positioned on the rear upper surface of the second layer of the gate arc breaking base, the front end of the rear layer of the gate straight strip electrode faces the inner side surface of the circular hole of the first layer of the gate arc breaking base, the rear end faces the inner side surface of the circular hole far away from the gate arc breaking base, the front tail end of the rear layer of the gate straight strip electrode is connected with the rear tail end of the front layer of the gate straight strip electrode, the rear tail end of the rear layer of the gate straight strip electrode is connected with the lower layer of the gate straight strip electrode, but the rear tail end of the rear layer of the gate straight strip electrode is not connected with the rear tail end of; the insulating slurry layer printed on the dark black broken interlayer forms three layers of gate pole broken arc base; forming a gate electrode ash silver external connecting layer by the printed silver paste layers on the upper surfaces of the three layers of the gate electrode arc breaking bases; the front tail end of the gate electrode gray silver outer connecting layer is connected with the rear tail end of the lower layer of the gate electrode straight strip electrode; forming four layers of gate broken arc groups by the printed insulating slurry layers on the front layer of the gate straight strip electrode and the rear layer of the gate straight strip electrode; the carbon nanotube layer is prepared on the cathode cone inclined bottom electrode.
Specifically, the fixed position of the single-ring pyramid inclined plane cathode concave-straight arc segment gate control structure is a rear transparent hard glass plate.
Specifically, the rear transparent hard glass plate is made of plane borosilicate glass or soda-lime glass.
The invention also provides a manufacturing method of the light-emitting backlight source with the single-ring pyramid inclined plane cathode concave-straight arc section gate control structure, which comprises the following steps:
1) manufacturing a rear transparent hard glass plate: scribing the plane glass to form a rear transparent hard glass plate;
2) manufacturing a dark and broken interlayer: printing insulating slurry on the rear transparent hard glass plate, and forming a dark and black broken interlayer after baking and sintering processes;
3) preparing a cathode gray silver outer connecting layer: printing silver paste on the dark black interlayer, and forming a cathode gray silver external connecting layer after baking and sintering processes;
4) and (3) manufacturing the lower layer of the cathode ring cone: printing insulating slurry on the cathode gray silver outer connecting layer, and forming a cathode ring cone lower layer after baking and sintering processes;
5) manufacturing a cathode inner connecting wire layer: printing silver paste in a square hole in the lower layer of the cathode ring cone, and forming a cathode inner connecting wire layer after baking and sintering processes;
6) and (3) manufacturing two layers of cathode interconnectors: printing silver paste on the upper surface of the lower layer of the cathode ring cone, and forming a cathode inner connecting wire two layer after baking and sintering processes;
7) manufacturing an upper outer layer of the cathode ring cone: printing insulating slurry on the two layers of the cathode interconnector, and forming an upper outer layer of the cathode ring cone after baking and sintering processes;
8) manufacturing a cathode cone inclined bottom electrode: printing silver paste on the outer side surface of the upper outer layer of the cathode ring cone, and forming a cathode cone inclined bottom electrode after baking and sintering processes;
9) manufacturing an upper inner layer of the cathode ring cone: printing insulating slurry on the two layers of the cathode interconnector, and forming an upper inner layer of the cathode ring cone after baking and sintering processes;
10) manufacturing a gate arc breaking base layer: printing insulating slurry on the dark black broken interlayer, and forming a gate broken arc base layer after baking and sintering processes;
11) manufacturing a gate straight strip electrode lower layer: printing silver paste on the upper surface of the gate broken arc base layer, and forming a gate straight strip electrode lower layer after baking and sintering processes;
12) manufacturing a gate arc breaking base layer II: printing insulating slurry on the lower layer of the gate straight strip electrode, and forming a gate broken arc base two layer after baking and sintering processes;
13) manufacturing a gate straight strip electrode front layer: printing silver paste on the front side surface of the second gate arc breaking base layer, and forming a front gate straight strip electrode layer after baking and sintering processes;
14) manufacturing a gate straight strip electrode rear layer: printing silver paste on the rear upper surface of the second gate broken arc base layer, and forming a rear gate straight strip electrode layer after baking and sintering processes;
15) manufacturing three layers of gate pole broken arc base: printing insulating slurry on the dark black broken interlayer, and forming three layers of gate pole broken arc bases after baking and sintering processes;
16) manufacturing a gate electrode gray silver outer connecting layer: printing silver paste on the upper surfaces of the three layers of the gate arc breaking base, and forming a gate electrode silver paste external connecting layer after baking and sintering processes;
17) manufacturing four layers of gate arc breaking bases: printing insulating slurry on the front layer of the gate straight strip electrode and the rear layer of the gate straight strip electrode, and forming a gate broken arc base four layer after baking and sintering processes;
18) cleaning a concave-straight arc section gate control structure of a monocyclic pyramid inclined plane cathode: cleaning the surface of the concave-straight arc gate structure of the inclined cathode of the monocyclic pyramid to remove impurities and dust;
19) manufacturing a carbon nanotube layer: printing carbon nano tubes on the cathode cone inclined bottom electrode to form a carbon nano tube layer;
20) and (3) processing the carbon nanotube layer: post-processing the carbon nanotube layer to improve the field emission characteristic;
21) manufacturing a front transparent hard glass plate: scribing the plane glass to form a front transparent hard glass plate;
22) manufacturing an anode low-resistance film electric layer: etching the tin-indium oxide film layer covering the surface of the front transparent hard glass plate to form an anode low-resistance film electric layer;
23) preparing an anode silver-ash outer connecting layer: printing silver paste on the front transparent hard glass plate, and forming an anode silver-gray outer connecting layer after baking and sintering processes;
24) manufacturing a thin light-emitting layer: printing fluorescent powder on the anode low-resistance film electric layer, and forming a thin light-emitting layer after a baking process;
25) assembling the light-emitting backlight source device: mounting a getter to a non-display area of the front transparent hard glass plate; then, assembling the front hard glass plate, the rear hard glass plate and the glass narrow frame strip together, and fixing by using a clamp;
26) packaging the light-emitting backlight source device: and carrying out packaging process on the assembled light-emitting backlight source device to form a finished product.
Specifically, in step 23, silver paste is printed on the non-display area of the front transparent hard glass plate, and after the baking process, the maximum baking temperature is: 192 ℃, maximum baking temperature holding time: 7.5 minutes; placing the mixture in a sintering furnace for sintering, wherein the maximum sintering temperature is as follows: 532 ℃, maximum sintering temperature holding time: 9.5 minutes.
Specifically, in step 24, phosphor is printed on the anode low-resistance film electrical layer of the front transparent hard glass plate, and then the front transparent hard glass plate is placed in an oven to be baked, wherein the maximum baking temperature is as follows: 152 ℃, maximum baking temperature hold time: 7.5 minutes.
Specifically, in step 26, the packaging process includes placing the light-emitting backlight device in an oven for baking; sintering in a sintering furnace; exhausting and sealing off on an exhaust table; baking the getter on a baking machine; and finally, additionally installing pins to form a finished product.
Has the advantages that: the invention has the following remarkable progress:
firstly, in the gate control structure of the cathode concave-straight arc section with the single-ring pyramid inclined plane, a cathode cone inclined bottom electrode is manufactured. The cathode cone inclined bottom electrode is in an inclined straight slope shape, is positioned on the upper outer layer of the cathode ring cone and surrounds the upper inner layer of the cathode ring cone, so that the manufacturing area of the carbon nano tube cathode is greatly increased. The manufacturing area of the carbon nanotube cathode is increased, so that the number of the carbon nanotubes participating in electron emission is increased, which is helpful for improving the emission current of the light-emitting backlight and the light-emitting brightness of the light-emitting backlight.
Secondly, in the gate control structure of the cathode concave-straight arc section with the inclined plane of the monocyclic pyramid, a carbon nanotube layer is manufactured on the cathode inclined bottom electrode. The cathode cone inclined bottom electrode has a large upper edge of the electrode and a large lower edge of the electrode at the same time, and can make full use of the phenomenon of 'edge electric field enhancement' to enable the carbon nano tube at the position to emit more cathode electrons, namely, to form a larger current of the light-emitting backlight source, which is favorable for improving the light-emitting brightness adjustability of the light-emitting backlight source.
Thirdly, in the single-ring pyramid inclined-plane cathode concave-straight arc segment gate control structure, a gate straight strip electrode lower layer, a gate straight strip electrode front layer and a gate straight strip electrode rear layer are manufactured. The gate electrode silver-ash outer connecting layer can smoothly transmit external potential to the front layer of the gate electrode straight strip electrode and the lower layer of the gate electrode straight strip electrode, so that strong electric field intensity is formed on the surface of the carbon nano tube layer, the carbon nano tube is forced to emit more electrons, and the quantity of the emitted electrons of the carbon nano tube can be changed along with the change of the gate electrode voltage. The lower layer of the gate straight strip electrode, the front layer of the gate straight strip electrode and the rear layer of the gate straight strip electrode play a role in regulating and controlling the electron emission of the carbon nano tube together, thereby obviously improving the manufacturing yield of the light-emitting backlight source.
In addition, no special manufacturing process is adopted in the manufacturing process of the concave-straight arc gate control structure of the inclined cathode of the monocyclic pyramid, which is beneficial to improving the manufacturing yield of the light-emitting backlight source; no special manufacturing material is adopted, which is beneficial to reducing the manufacturing cost of the luminous backlight source.
Drawings
FIG. 1 is a schematic longitudinal structural diagram of a monocyclic pyramid beveled cathode concave-straight arc segment gated structure in an embodiment of the present invention.
FIG. 2 is a schematic diagram of the lateral structure of a gate structure of a single-ring pyramid beveled cathode concave-straight arc segment in an embodiment of the present invention.
Fig. 3 is a schematic structural diagram of a light-emitting backlight source with a single-ring pyramid inclined cathode concave-straight arc segment gate control structure according to an embodiment of the present invention.
In the figure, a rear transparent
Detailed Description
The present invention will be further described with reference to the drawings and examples, but the present invention is not limited to the examples.
The light-emitting backlight source of the single-ring pyramid inclined-plane cathode concave-straight arc segment gate control structure of the present embodiment is shown in fig. 1, fig. 2 and fig. 3, and includes a vacuum enclosure and an auxiliary element of a getter 23 located in the vacuum enclosure; the vacuum enclosure consists of a front hard glass plate 19, a rear
The gate control structure of the inclined cathode concave straight arc section of the monocyclic pyramid comprises a rear transparent
The substrate of the single-ring pyramid inclined plane cathode concave-straight arc gate control structure is a rear transparent hard glass plate 1; forming a dark black broken interlayer 2 by the printed insulating paste layer on the rear transparent hard glass plate 1; the printed silver paste layer on the dark black partition layer 2 forms a cathode gray silver external connection layer 3; the printed insulating slurry layer on the cathode silver outer connecting layer 3 forms a cathode ring cone lower layer 4; the lower surface of the cathode ring cone lower layer 4 is a circular plane and is positioned on the cathode gray silver outer connecting layer 3, the upper surface of the cathode ring cone lower layer 4 is a circular plane, the diameter of the lower surface of the cathode ring cone lower layer 4 is equal to that of the upper surface, the central vertical line of the upper surface of the cathode ring cone lower layer 4 is coincident with that of the upper surface, and the outer side surface of the cathode ring cone lower layer 4 is a cylindrical surface; a square hole is arranged in the lower layer 4 of the cathode ring cone, and a cathode inner connecting wire layer 5 is formed on a silver paste layer printed in the square hole; the cathode inner connecting wire layer 5 and the cathode silver outer connecting layer 3 are communicated with each other; the printed silver paste layer on the upper surface of the cathode ring cone lower layer 4 forms a cathode inner connecting wire two layer 6; the cathode internal connecting line two-layer 6 and the cathode internal connecting line one-layer 5 are communicated with each other, the cathode internal connecting line two-layer 6 is in a round surface shape and is fully distributed on the upper surface of the cathode ring cone lower layer 4, and the outer edge of the round surface of the cathode internal connecting line two-layer 6 is flush with the outer edge of the upper surface of the cathode ring cone lower layer 4; the printed insulating paste layer on the cathode inner connecting wire two-layer 6 forms the cathode ring cone upper outer layer 7; the lower surface of the outer layer 7 on the cathode ring cone is a plane and is positioned on the cathode inner connecting wire two-layer 6, the outer edge of the lower surface of the outer layer 7 on the cathode ring cone is not flush with the outer edge of the cathode inner connecting wire two-layer 6, the diameter of the outer edge of the lower surface of the outer layer 7 on the cathode ring cone is smaller than the diameter of the circular surface of the cathode inner connecting wire two-layer 6, the inner edge of the lower surface of the outer layer 7 on the cathode ring cone is in a circular ring shape, the central vertical line of the lower surface of the outer layer 7 on the cathode ring cone and the central vertical line of the upper surface of the lower layer 4 of the cathode ring cone are mutually coincident, the outer side surface of the outer layer 7 on the cathode ring cone is an inclined straight; the printed silver paste layer on the outer side surface of the outer layer 7 on the cathode ring cone forms a cathode cone inclined bottom electrode 8; the cathode cone inclined bottom electrode 8 is positioned on the outer side face of the cathode ring cone upper outer layer 7, the upper edge of the cathode cone inclined bottom electrode 8 is flush with the upper edge of the outer side face of the cathode ring cone upper outer layer 7, the lower edge of the cathode cone inclined bottom electrode 8 is flush with the lower edge of the outer side face of the cathode ring cone upper outer layer 7, and the cathode cone inclined bottom electrode 8 is communicated with the cathode interconnection two-layer 6; the printed insulating paste layer on the cathode interconnect two-layer 6 forms the cathode ring cone upper inner layer 9; the lower surface of the inner layer 9 on the cathode ring cone is a circular plane and is positioned on the two layers 6 of the cathode inner connecting line, the diameter of the lower surface of the inner layer 9 on the cathode ring cone is equal to the diameter of the inner edge of the lower surface of the outer layer 7 on the cathode ring cone, the central vertical line of the lower surface of the inner layer 9 on the cathode ring cone is coincident with the central vertical line of the lower surface of the outer layer 7 on the cathode ring cone, the upper surface of the inner layer 9 on the cathode ring cone is a circular plane, the upper surface and the lower surface of the inner layer 9 on the cathode ring cone are parallel to each other, the central vertical line of the upper surface of the inner layer 9 on the cathode ring cone is coincident with the central vertical line of the lower surface of the inner layer 9 on the cathode ring cone, the outer edge of the lower surface of the inner layer 9 on the cathode ring cone is flush; the insulating slurry layer printed on the dark black break interlayer 2 forms a gate pole broken arc base layer 10; the lower surface of the gate pole broken arc base layer 10 is a plane and is positioned on the dark black broken interlayer 2, a circular hole is formed in the gate pole broken arc base layer 10, the dark black broken interlayer 2, the cathode gray silver outer connecting layer 3, the cathode ring cone lower layer 4, the cathode inner connecting wire layer 5, the cathode inner connecting wire layer two 6, the cathode ring cone upper outer layer 7, the cathode cone inclined bottom electrode 8 and the cathode ring cone upper inner layer 9 are exposed in the circular hole, and the inner side surface of the gate pole broken arc base layer 10 is an upright cylindrical surface; the printed silver paste layer on the upper surface of the gate broken arc base layer 10 forms a gate straight strip electrode lower layer 11; the lower layer 11 of the gate straight strip electrode is arc-shaped and is positioned on the upper surface of the first layer 10 of gate arc breaking base, the front end of the lower layer 11 of the gate straight strip electrode faces the inner side surface of the first layer 10 of circular hole of the gate arc breaking base, the rear end faces the inner side surface of the first layer 10 of circular hole far away from the gate arc breaking base, the front end of the lower layer 11 of the gate straight strip electrode is low in height, the rear end of the lower layer 11 of the gate straight strip electrode is high in height, and the front tail end of the lower layer 11 of the gate straight strip; the printed insulating slurry layer on the lower layer 11 of the gate straight strip electrode forms a gate broken arc base second layer 12; the printed silver paste layer on the front side surface of the gate broken arc base secondary layer 12 forms a gate straight strip electrode front layer 13; the front layer 13 of the gate straight strip electrode is in an oblique straight slope shape and is positioned on the front side surface of the second layer 12 of the gate broken arc base, the front end of the front layer 13 of the gate straight strip electrode faces the inner side surface of the first layer 10 circular hole of the gate broken arc base, the rear end of the front layer 13 of the gate straight strip electrode faces the inner side surface of the first layer 10 circular hole of the gate broken arc base, the front end of the front layer 13 of the gate straight strip electrode is low, the rear end of the front layer 13 of the gate straight strip electrode is high, the front tail end of the front layer 13 of the gate straight strip electrode is flush with the inner side surface of the first layer 10 circular hole of the gate broken arc base, and; the printed silver paste layer on the rear upper surface of the gate broken arc base second layer 12 forms a gate straight strip electrode rear layer 14; the gate straight strip electrode rear layer 14 is planar and is positioned on the rear upper surface of the gate broken arc base second layer 12, the front end of the gate straight strip electrode rear layer 14 faces the inner side surface of the gate broken arc base first layer 10 circular hole, the rear end faces the inner side surface of the gate broken arc base first layer 10 circular hole, the front end of the gate straight strip electrode rear layer 14 is connected with the rear end of the gate straight strip electrode front layer 13, the rear end of the gate straight strip electrode rear layer 14 is connected with the gate straight strip electrode lower layer 11, but the rear end of the gate straight strip electrode rear layer 14 is not connected with the rear end of the gate straight strip electrode lower layer 11; the insulating slurry layer printed on the dark black break interlayer 2 forms a gate pole broken arc base three-layer 15; the gate electrode arc breaking base three-layer 15 is printed with silver paste to form a gate electrode ash silver external connecting layer 16; the front end of the gate electrode gray silver external connection layer 16 is connected with the rear end of the gate electrode straight strip electrode lower layer 11; the gate straight strip electrode front layer 13 and the gate straight strip electrode rear layer 14 are printed with insulating slurry to form a gate broken arc base four layer 17; a carbon nanotube layer 18 is prepared on the cathode cone inclined bottom electrode 8.
The fixed position of the single-ring pyramid inclined plane cathode concave-straight arc section gate control structure is a rear transparent
The rear transparent hard glass plate is made of plane borosilicate glass or soda-lime glass.
The manufacturing process of the light-emitting backlight source with the single-ring pyramid inclined plane cathode concave-straight arc section gating structure comprises the following steps of:
1) manufacturing a rear transparent hard glass plate: and (4) scribing the planar soda-lime glass to form the rear transparent hard glass plate.
2) Manufacturing a dark and broken interlayer: and printing insulating slurry on the rear transparent hard glass plate, and baking and sintering to form a dark and black broken interlayer.
3) Preparing a cathode gray silver outer connecting layer: and printing silver paste on the dark black interlayer, and baking and sintering to form the cathode gray silver external connecting layer.
4) And (3) manufacturing the lower layer of the cathode ring cone: and printing insulating slurry on the cathode gray silver outer connecting layer, and baking and sintering to form the cathode ring cone lower layer.
5) Manufacturing a cathode inner connecting wire layer: and printing silver paste in the square hole in the lower layer of the cathode ring cone, and forming a cathode inner connecting wire layer after baking and sintering processes.
6) And (3) manufacturing two layers of cathode interconnectors: and printing silver paste on the upper surface of the lower layer of the cathode ring cone, and forming a cathode interconnection two-layer after baking and sintering processes.
7) Manufacturing an upper outer layer of the cathode ring cone: and printing insulating slurry on the two layers of the cathode interconnector, and forming the upper outer layer of the cathode ring cone after baking and sintering processes.
8) Manufacturing a cathode cone inclined bottom electrode: and printing silver paste on the outer side surface of the upper outer layer of the cathode ring cone, and baking and sintering to form the cathode cone inclined bottom electrode.
9) Manufacturing an upper inner layer of the cathode ring cone: and printing insulating slurry on the two layers of the cathode interconnector, and forming an upper inner layer of the cathode ring cone after baking and sintering processes.
10) Manufacturing a gate arc breaking base layer: and printing insulating slurry on the dark black broken interlayer, and baking and sintering to form a gate broken arc base layer.
11) Manufacturing a gate straight strip electrode lower layer: and printing silver paste on the upper surface of the gate broken arc base layer, and baking and sintering to form the gate straight strip electrode lower layer.
12) Manufacturing a gate arc breaking base layer II: and printing insulating slurry on the lower layer of the gate straight strip electrode, and baking and sintering to form a gate broken arc base secondary layer.
13) Manufacturing a gate straight strip electrode front layer: and printing silver paste on the front side surface of the gate broken arc base layer II, and forming a gate straight strip electrode front layer after baking and sintering processes.
14) Manufacturing a gate straight strip electrode rear layer: and printing silver paste on the rear upper surface of the second gate broken arc layer, and baking and sintering to form the rear layer of the gate straight strip electrode.
15) Manufacturing three layers of gate pole broken arc base: and printing insulating slurry on the dark black broken interlayer, and baking and sintering to form three layers of gate broken arc bases.
16) Manufacturing a gate electrode gray silver outer connecting layer: silver paste is printed on the upper surfaces of the three layers of the gate arc breaking base, and the gate electrode silver paste outer connecting layer is formed after baking and sintering processes.
17) Manufacturing four layers of gate arc breaking bases: and printing insulating slurry on the front layer of the gate straight strip electrode and the rear layer of the gate straight strip electrode, and baking and sintering to form the gate broken arc base four layers.
18) Cleaning a concave-straight arc section gate control structure of a monocyclic pyramid inclined plane cathode: and cleaning the surface of the concave-straight arc gate structure of the inclined cathode of the monocyclic pyramid to remove impurities and dust.
19) Manufacturing a carbon nanotube layer: and printing the carbon nano tube on the cathode cone inclined bottom electrode to form a carbon nano tube layer.
20) And (3) processing the carbon nanotube layer: and post-processing the carbon nano tube layer to improve the field emission characteristic of the carbon nano tube layer.
21) Manufacturing a front transparent hard glass plate: and (4) scribing the planar soda-lime glass to form a front through hard glass plate.
22) Manufacturing an anode low-resistance film electric layer: and etching the tin-indium oxide film layer covering the surface of the front transparent hard glass plate to form the anode low-resistance film electric layer.
23) Preparing an anode silver-ash outer connecting layer: and printing silver paste on the front transparent hard glass plate, and baking and sintering to form an anode silver-gray outer connecting layer.
24) Manufacturing a thin light-emitting layer: and printing fluorescent powder on the anode low-resistance film electric layer, and forming a thin light-emitting layer after a baking process.
25) Assembling the light-emitting backlight source device: mounting a getter to a non-display area of the front transparent hard glass plate; then, the front hard glass plate, the rear hard glass plate and the glass narrow frame strip are assembled together and fixed by a clamp.
26) Packaging the light-emitting backlight source device: packaging the assembled light-emitting backlight source device, and baking the light-emitting backlight source device in an oven; sintering in a sintering furnace; exhausting and sealing off on an exhaust table; baking the getter on a baking machine; and finally, additionally installing pins to form a finished product.
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