阅读说明：本技术 一种高频驱动系统 (High-frequency driving system ) 是由 邓端崇 王苗 阴波波 赫笑然 谭楚斌 许啟健 高云峰 于 2019-08-23 设计创作，主要内容包括：本发明提供了一种高频驱动系统,包括电源模块电路、晶体振荡器发生电路、调制信号整形电路、调制信号上升沿调节电路及后级放大电路；电源模块电路,为调制信号整形电路及晶体振荡器发生电路提供电源；晶体振荡器发生电路,提供高精度的高频信号；调制信号整形电路,将初始调制信号转换成规则的调制信号；调制信号上升沿调节电路,接收所述调制信号整形电路的信号,并输出上升沿调节后的信号；后级放大电路,接收来自所述晶体振荡器发生电路的高频信号和调制信号上升沿调节电路的调制信号,输出放大后的射频信号。本发明提供了一种由分立元件组成,输出功率可调,成本较低,容易实现,占用电路板面积小的高频驱动系统。(The invention provides a high-frequency driving system, which comprises a power module circuit, a crystal oscillator generating circuit, a modulation signal shaping circuit, a modulation signal rising edge adjusting circuit and a post-stage amplifying circuit, wherein the modulation signal shaping circuit is connected with the modulation signal rising edge adjusting circuit; the power module circuit is used for providing power for the modulation signal shaping circuit and the crystal oscillator generating circuit; a crystal oscillator generating circuit for providing a high-precision high-frequency signal; a modulation signal shaping circuit for converting the initial modulation signal into a regular modulation signal; the modulation signal rising edge adjusting circuit receives the signal of the modulation signal shaping circuit and outputs a signal with the adjusted rising edge; and the post-stage amplifying circuit receives the high-frequency signal from the crystal oscillator generating circuit and the modulation signal of the modulation signal rising edge adjusting circuit and outputs an amplified radio-frequency signal. The invention provides a high-frequency driving system which is composed of discrete components, has adjustable output power, lower cost, easy realization and small occupied circuit board area.)

1. A high frequency drive system characterized by: the high-frequency driving system includes:

the power module circuit is used for providing power for the modulation signal shaping circuit and the crystal oscillator generating circuit;

a crystal oscillator generating circuit for providing a high-precision high-frequency signal;

a modulation signal shaping circuit for converting the initial modulation signal into a regular modulation signal;

the modulation signal rising edge adjusting circuit receives the signal of the modulation signal shaping circuit and outputs a signal with the adjusted rising edge;

the rear-stage amplifying circuit receives the high-frequency signal from the crystal oscillator generating circuit and the modulation signal of the modulation signal rising edge adjusting circuit and outputs an amplified radio-frequency signal;

the power module circuit is connected with the crystal oscillator generating circuit, the power module circuit is connected with the modulation signal shaping circuit, the modulation signal shaping circuit is connected with the modulation signal rising edge adjusting circuit, and the crystal oscillator generating circuit and the modulation signal rising edge adjusting circuit are jointly connected with the post-stage amplifying circuit.

2. The high frequency driving system according to claim 1, wherein: the power module circuit comprises a voltage stabilizing source, a fourth capacitor, a fifth capacitor, a sixth capacitor and a seventh capacitor, wherein the voltage input end of the voltage stabilizing source is connected with an external power supply, the voltage input end of the voltage stabilizing source is grounded through the fourth capacitor and the fifth capacitor respectively, the voltage output end of the voltage stabilizing source is grounded through the sixth capacitor and the seventh capacitor respectively, and the grounding end of the voltage stabilizing source is grounded.

3. The high frequency driving system according to claim 2, wherein: the fourth capacitor and the sixth capacitor are both electrolytic capacitors.

4. The high frequency driving system according to claim 2, wherein: the voltage-stabilizing source comprises an LM7805 voltage-stabilizing chip.

5. The high frequency driving system according to claim 2, wherein: the power module circuit further comprises a power indication circuit, the power indication circuit comprises an LED lamp and a sixth resistor, the voltage output end of the power module circuit is connected with the anode of the LED lamp, and the cathode of the LED lamp is grounded through the sixth resistor.

6. The high frequency driving system according to claim 1, wherein: the crystal oscillator generating circuit comprises a crystal oscillator, a fourteenth capacitor, a fifteenth capacitor and a fourth variable resistor, wherein a voltage input end of the crystal oscillator is connected with a voltage output end of the power module circuit, the voltage input end of the crystal oscillator is grounded through the fifteenth capacitor, a ground end of the crystal oscillator is grounded, a high-frequency signal output end of the crystal oscillator is connected with the fourth variable resistor, and the fourth variable resistor is connected with an external circuit through the fourteenth capacitor.

7. The high frequency driving system according to claim 6, wherein: the crystal oscillator is a 100MHZ active crystal oscillator.

8. The high frequency driving system according to claim 1, wherein: the modulation signal shaping circuit comprises a NOT gate chip, a fifth resistor, an eleventh capacitor, a twelfth capacitor and a thirteenth capacitor, wherein a signal input end of the NOT gate chip is grounded through the fifth resistor, a signal input end of the NOT gate chip is grounded through the eleventh capacitor, a voltage input end of the NOT gate chip is grounded through the twelfth capacitor and the thirteenth capacitor respectively, a voltage access end of the NOT gate chip is connected with a voltage output end of the power module circuit, and a signal output end of the NOT gate chip is connected with an external circuit.

9. The high frequency driving system according to claim 8, wherein: the NOT gate chip is 74LS 14.

10. The high frequency driving system according to claim 1, wherein: the modulation signal rising edge adjusting circuit comprises a second MOS tube, a second variable resistor, a third resistor, a fourth resistor, an eighth capacitor, a ninth capacitor and a tenth capacitor, one end of the second variable resistor is connected with a voltage output end of the power module circuit, the other end of the second variable resistor is connected with a drain electrode of the second MOS tube, a source electrode of the second MOS tube is grounded, a grid electrode of the second MOS tube is connected with the modulation signal shaping circuit through the fourth resistor, an intermediate joint of the grid electrode of the second MOS tube and the fourth resistor is grounded through the third resistor, an intermediate joint of the grid electrode of the second MOS tube and the fourth resistor is grounded through the tenth capacitor, an intermediate joint of the second variable resistor and the drain electrode of the second MOS tube is grounded through the ninth capacitor, and an intermediate joint of the second variable resistor and the drain electrode of the second MOS tube is connected with the external circuit through the eighth capacitor .

11. The high frequency driving system according to claim 10, wherein: the second MOS tube is FDV 301.

12. The high frequency driving system according to claim 10, wherein: the eighth capacitor is a magnetic bead and is 100M @5K in specification.

13. The high frequency driving system according to claim 1, wherein: the post-stage amplification circuit comprises a first MOS (metal oxide semiconductor) tube, a first capacitor, a second capacitor, a third capacitor, a sixteenth capacitor, a seventeenth capacitor, an eighteenth capacitor, a nineteenth capacitor, a first inductor, a second inductor, a third inductor, a fourth inductor, a first resistor, a second resistor, a first variable resistor, a third variable resistor, a diode and a triode; one end of the first variable resistor is connected with the crystal oscillator generating circuit and the modulation signal rising edge adjusting circuit, the other end of the first variable resistor is connected with the anode of the diode, the cathode of the diode is connected with the grid electrode of the first MOS tube, the source electrode of the first MOS tube is grounded, the drain electrode of the first MOS tube is connected with the fourth inductor, the other end of the fourth inductor is connected with the second inductor, the other end of the second inductor is connected with the first inductor, the other end of the first inductor is connected with the first capacitor, the other end of the first capacitor is connected with an external circuit, the base electrode of the triode is connected with an intermediate joint of the first variable resistor and the anode of the diode, the collector electrode of the triode is grounded, and the emitter electrode of the triode is connected with the intermediate joint of the cathode of the diode and the grid electrode of the first MOS tube through the third variable resistor, the intermediate junction that the fourth inductance and the second inductance are connected passes through eighteenth electric capacity ground connection, the intermediate junction that the second inductance and the first inductance are connected passes through third electric capacity ground connection, the intermediate junction that the first inductance and the first capacitance are connected passes through second electric capacity ground connection, the intermediate junction that fourth inductance and the second inductance are connected is connected to third inductance one end, the third inductance other end is connected first resistance, the first resistance other end is connected external power supply, the intermediate junction that first resistance and the third inductance are connected is connected to second resistance one end, the intermediate junction that first resistance and the external power supply are connected is connected to the second resistance other end, the intermediate junction that the nineteenth electric capacity one end is connected first resistance and the third inductance is connected, the intermediate junction that the nineteenth electric capacity other end is connected first resistance and the external power supply is connected, and the intermediate joint of the first resistor connected with the external power supply is grounded through the sixteenth capacitor, and the intermediate joint of the first resistor connected with the external power supply is grounded through the seventeenth capacitor.

14. The high frequency driving system according to claim 13, wherein: the first MOS tube is RFM04U 6P.

15. The high frequency driving system according to claim 13, wherein: and the nineteenth capacitor is a magnetic bead with the specification of 100M @ 160R.

Technical Field

The invention relates to the field of high-frequency signal amplification circuits, in particular to a high-frequency driving system.

Background

The traditional high-frequency amplification system mainly comprises a small signal generator, a filter, a coupler and a power integration module. Under the condition of a certain area, each part of elements cannot be made well enough, the more the functional requirements are, the performance cannot be exerted to the maximum, and the existing product mostly occupies a larger area of a circuit board. So in high performance applications, there are typically application specific integrated chips. However, even such integrated chips cannot completely replace discrete devices, and the integrated circuits are difficult to meet in high frequency and ultra-high power circuit applications. The performance of the discrete device is only considered independently, the limitation of a single component is reduced, and the performance of a single element can be well achieved. The use of discrete devices is more flexible because they cannot be changed as integrated circuits are integrated in a chip. Discrete devices generally do their way in situations where performance requirements are more specific. In particular, discrete devices are used actively when integrated circuits are not functional at high power.

Disclosure of Invention

The technical problem to be solved by the invention is as follows: a high-frequency amplifying system, particularly a high-frequency driving system, composed of discrete components is provided.

In order to solve the technical problems, the invention adopts the technical scheme that: there is provided a high frequency driving system including:

the power module circuit is used for providing power for the modulation signal shaping circuit and the crystal oscillator generating circuit;

a crystal oscillator generating circuit for providing a high-precision high-frequency signal;

a modulation signal shaping circuit for converting the initial modulation signal into a regular modulation signal;

the modulation signal rising edge adjusting circuit receives the signal of the modulation signal shaping circuit and outputs a signal with the adjusted rising edge;

the rear-stage amplifying circuit receives the high-frequency signal from the crystal oscillator generating circuit and the modulation signal of the modulation signal rising edge adjusting circuit and outputs an amplified radio-frequency signal;

the power module circuit is connected with the crystal oscillator generating circuit, the power module circuit is connected with the modulation signal shaping circuit, the modulation signal shaping circuit is connected with the modulation signal rising edge adjusting circuit, and the crystal oscillator generating circuit and the modulation signal rising edge adjusting circuit are jointly connected with the post-stage amplifying circuit.

Furthermore, the power module circuit comprises a voltage regulator, a fourth capacitor, a fifth capacitor, a sixth capacitor and a seventh capacitor, wherein a voltage input end of the voltage regulator is connected with an external power supply, the voltage input end of the voltage regulator is grounded through the fourth capacitor and the fifth capacitor respectively, a voltage output end of the voltage regulator is grounded through the sixth capacitor and the seventh capacitor respectively, and a ground end of the voltage regulator is grounded.

Further, the fourth capacitor and the sixth capacitor are both electrolytic capacitors.

Further, the voltage regulator comprises an LM7805 voltage regulator chip.

Furthermore, the power module circuit further comprises a power indication circuit, the power indication circuit comprises an LED lamp and a sixth resistor, the voltage output end of the power module circuit is connected with the anode of the LED lamp, and the cathode of the LED lamp is grounded through the sixth resistor.

Further, the crystal oscillator generating circuit comprises a crystal oscillator, a fourteenth capacitor, a fifteenth capacitor and a fourth variable resistor, wherein a voltage input end of the crystal oscillator is connected with a voltage output end of the power module circuit, a voltage input end of the crystal oscillator is grounded through the fifteenth capacitor, a ground end of the crystal oscillator is grounded, a high-frequency signal output end of the crystal oscillator is connected with the fourth variable resistor, and the fourth variable resistor is connected with an external circuit through the fourteenth capacitor.

Further, the crystal oscillator is a 100MHz active crystal oscillator.

Furthermore, the modulation signal shaping circuit comprises a not-gate chip, a fifth resistor, an eleventh capacitor, a twelfth capacitor and a thirteenth capacitor, wherein a signal input end of the not-gate chip is grounded through the fifth resistor, a signal input end of the not-gate chip is grounded through the eleventh capacitor, a voltage input end of the not-gate chip is grounded through the twelfth capacitor and the thirteenth capacitor respectively, a voltage access end of the not-gate chip is connected with a voltage output end of the power module circuit, and a signal output end of the not-gate chip is connected with an external circuit.

Further, the NOT gate chip is 74LS 14.

Furthermore, the modulation signal rising edge adjusting circuit includes a second MOS transistor, a second variable resistor, a third resistor, a fourth resistor, an eighth capacitor, a ninth capacitor, and a tenth capacitor, one end of the second variable resistor is connected to the voltage output terminal of the power module circuit, the other end of the second variable resistor is connected to the drain of the second MOS transistor, the source of the second MOS transistor is grounded, the gate of the second MOS transistor is connected to the modulation signal shaping circuit through the fourth resistor, an intermediate contact between the gate of the second MOS transistor and the fourth resistor is grounded through the third resistor, an intermediate contact between the gate of the second MOS transistor and the fourth resistor is grounded through the tenth capacitor, an intermediate contact between the second variable resistor and the drain of the second MOS transistor is grounded through the ninth capacitor, and an intermediate contact between the second variable resistor and the drain of the second MOS transistor is connected to the eighth capacitor The external circuit.

Further, the second MOS transistor is FDV 301.

Furthermore, the eighth capacitor is a magnetic bead, and the specification is 100M @ 5K.

Further, the post-stage amplification circuit comprises a first MOS transistor, a first capacitor, a second capacitor, a third capacitor, a sixteenth capacitor, a seventeenth capacitor, an eighteenth capacitor, a nineteenth capacitor, a first inductor, a second inductor, a third inductor, a fourth inductor, a first resistor, a second resistor, a first variable resistor, a third variable resistor, a diode and a triode; one end of the first variable resistor is connected with the crystal oscillator generating circuit and the modulation signal rising edge adjusting circuit, the other end of the first variable resistor is connected with the anode of the diode, the cathode of the diode is connected with the grid electrode of the first MOS tube, the source electrode of the first MOS tube is grounded, the drain electrode of the first MOS tube is connected with the fourth inductor, the other end of the fourth inductor is connected with the second inductor, the other end of the second inductor is connected with the first inductor, the other end of the first inductor is connected with the first capacitor, the other end of the first capacitor is connected with an external circuit, the base electrode of the triode is connected with an intermediate joint of the first variable resistor and the anode of the diode, the collector electrode of the triode is grounded, and the emitter electrode of the triode is connected with the intermediate joint of the cathode of the diode and the grid electrode of the first MOS tube through the third variable resistor, the intermediate junction that the fourth inductance and the second inductance are connected passes through eighteenth electric capacity ground connection, the intermediate junction that the second inductance and the first inductance are connected passes through third electric capacity ground connection, the intermediate junction that the first inductance and the first capacitance are connected passes through second electric capacity ground connection, the intermediate junction that fourth inductance and the second inductance are connected is connected to third inductance one end, the third inductance other end is connected first resistance, the first resistance other end is connected external power supply, the intermediate junction that first resistance and the third inductance are connected is connected to second resistance one end, the intermediate junction that first resistance and the external power supply are connected is connected to the second resistance other end, the intermediate junction that the nineteenth electric capacity one end is connected first resistance and the third inductance is connected, the intermediate junction that the nineteenth electric capacity other end is connected first resistance and the external power supply is connected, and the intermediate joint of the first resistor connected with the external power supply is grounded through the sixteenth capacitor, and the intermediate joint of the first resistor connected with the external power supply is grounded through the seventeenth capacitor.

Further, the first MOS transistor is RFM04U 6P.

Further, the nineteenth capacitor is a magnetic bead, and the specification is 100M @ 160R.

The invention has the beneficial effects that: the high-frequency driving system composed of the discrete elements is provided, the output power of the simple high-frequency driving system is adjustable, the cost price is low, the implementation is easy, and the occupied area of a circuit board is small.

Drawings

The specific structure of the invention is detailed below with reference to the accompanying drawings:

FIG. 1 is a schematic diagram of the system operation of the present invention;

FIG. 2 is a circuit diagram of a power module of the present invention;

FIG. 3 is a circuit diagram of a modulated signal shaping circuit of the present invention;

FIG. 4 is a circuit diagram of the modulation signal rising edge adjustment circuit of the present invention;

FIG. 5 is a circuit diagram of a crystal oscillator according to the present invention;

FIG. 6 is a circuit diagram of a post-amplification system of the present invention.

Detailed Description

In order to explain technical contents, structural features, and objects and effects of the present invention in detail, the following detailed description is given with reference to the accompanying drawings in conjunction with the embodiments.

Referring to fig. 1 and fig. 6, the present invention provides a high frequency driving system, including:

a power module circuit 10 for providing power to the modulation signal shaping circuit 20 and the crystal oscillator generating circuit 40;

a crystal oscillator generating circuit 40 for supplying a high-precision high-frequency signal;

a modulated signal shaping circuit 20 for receiving the initial modulated signal and converting the initial modulated signal into a regular modulated signal;

a modulation signal rising edge adjusting circuit 30 for receiving the signal of the modulation signal shaping circuit and outputting a signal with a rising edge adjusted;

a post-stage amplifying circuit 50, which receives the high-frequency signal from the crystal oscillator generating circuit 40 and the modulation signal from the modulation signal rising edge adjusting circuit 30, and outputs an amplified radio frequency signal;

the power module circuit 10 is connected to the crystal oscillator generating circuit 40, the power module circuit 10 is connected to the modulation signal shaping circuit 20, the modulation signal shaping circuit 20 is connected to the modulation signal rising edge adjusting circuit 30, and the crystal oscillator generating circuit 40 and the modulation signal rising edge adjusting circuit 30 are connected to the post-stage amplifying circuit 50.

The power module circuit 10 comprises a voltage regulator U1, a fourth capacitor C4, a fifth capacitor C5, a sixth capacitor C6 and a seventh capacitor C7; a voltage input end VIN of a voltage regulator U1 is connected with a 12V external power supply, the voltage input end VIN of a voltage regulator U1 is respectively grounded through a fourth capacitor C4 and a fifth capacitor C5, and the fourth capacitor C4 and the fifth capacitor C5 play a role in energy storage and filtering and provide stable electric energy for the voltage regulator U1; the voltage output end of the voltage regulator U1 is grounded through a sixth capacitor C6 and a seventh capacitor C7 respectively, and the sixth capacitor C6 and the seventh capacitor C7 play a role in energy storage and filtering and guarantee that the voltage output end of the voltage regulator U1 outputs a stable direct-current power supply; the ground end of the regulator U1 is grounded, and the output voltage of the regulator U1 is 5V in this embodiment.

The crystal oscillator generating circuit 40 comprises a crystal oscillator X1, a fourteenth capacitor C14, a fifteenth capacitor C15 and a fourth variable resistor VR 4; a voltage input terminal VCC of the crystal oscillator X1 is connected to a voltage output terminal VOUT of the power module circuit 10, the voltage input terminal VCC of the crystal oscillator X1 is grounded through a fifteenth capacitor C15, and the fifteenth capacitor C15 plays a role in energy storage and filtering and provides a stable direct current power supply for the crystal oscillator X1; the grounding end of the crystal oscillator X1 is grounded; the high-frequency signal output end OUT of the crystal oscillator X1 is connected with a fourth variable resistor VR4, the fourth variable resistor VR4 is connected with an external circuit through a fourteenth capacitor C14, and the power of the high-frequency signal output by the crystal oscillator X1 can be changed by adjusting the resistance value of the fourth variable resistor VR 4.

The modulation signal shaping circuit 20 comprises an NOT chip, a fifth resistor R5, an eleventh capacitor C11, a twelfth capacitor C12 and a thirteenth capacitor C13; the signal input end A2 of the NOT gate chip is grounded through a fifth resistor R5, when no modulation signal is input, the fifth resistor R5 is grounded, and the signal input end A2 of the NOT gate chip is ensured to be at a low potential; the signal input end A2 of the NOT gate chip is grounded through an eleventh capacitor C11, and the eleventh capacitor C11 can filter a little noise, so that the noise of the input NOT gate chip signal is reduced; the voltage access end VCC of the NOT gate chip is grounded through a twelfth capacitor C12 and a thirteenth capacitor C13 respectively, and the twelfth capacitor C12 and the thirteenth capacitor C13 play a role in energy storage and filtering and provide a stable direct-current power supply for the NOT gate chip; the voltage access end VCC of the NOT gate chip is connected with the voltage output end VOUT of the power module circuit 50; the grounding end GND of the NOT gate chip is grounded to ensure zero potential in the circuit; the signal output end UI-4 of the not-gate chip is connected to an external circuit, shapes the initial modulation signal HF-IN and sends the shaped initial modulation signal HF-IN to the modulation signal rising edge adjusting circuit 30.

The modulation signal rising edge adjusting circuit 30 comprises a second MOS transistor IC2, a second variable resistor VR2, a third resistor R3, a fourth resistor R4, an eighth capacitor C8, a ninth capacitor C9 and a tenth capacitor C10; one end of the second variable resistor VR2 is connected to the voltage output terminal VOUT of the power module circuit 10, the power module circuit 10 provides a stable dc power supply for the modulation signal rising edge adjusting circuit 30, and the second variable resistor VR2 can adjust the rising edge of the modulation signal to change within 0-5V; the other end of the second variable resistor VR2 is connected to the drain of the second MOS transistor IC2, the source of the second MOS transistor IC2 is grounded, the gate of the second MOS transistor IC2 is connected to the modulation signal shaping circuit 20 through a fourth resistor R4, the fourth resistor R4 is connected to the output signal U1_4 of the modulation signal shaping circuit 20 for limiting the current of the output signal U1-4, when the non-gate chip of the modulation signal shaping circuit 20 outputs a high level, the gate voltage of the second MOS transistor IC2 is at a high level, the second MOS transistor IC2 is turned on, when the input power source regulated by the second variable resistor VR2 is grounded through the source of the second MOS transistor IC2, the voltage at the drain of the second MOS transistor IC2 is near the zero axis, when the non-gate output of the modulation signal shaping circuit 20 is at a low level, the gate voltage of the second MOS transistor IC2 is at a low level, the second MOS transistor IC2 is turned off, and when the input power source voltage of the second variable resistor VR2 is not regulated by the second MOS transistor IC2, the voltage at the drain of the second MOS transistor IC2 changes at 0-5V under the regulation of a second variable resistor VR 2; the middle joint of the second variable resistor VR2 and the drain of the second MOS transistor IC2 is connected with the crystal oscillator generating circuit 40 through an eighth capacitor C8, when the voltage at the drain of the second MOS transistor IC2 is near the zero axis, the modulation signal rising edge adjusting circuit does not modulate the high-frequency signal X1-OUT generated by the crystal oscillator generating circuit 40, when the voltage at the drain of the second MOS transistor IC2 is adjusted by the second variable resistor VR2 to change within 0-5V, the modulation signal rising edge adjusting circuit 30 does not modulate the high-frequency signal X1-OUT generated by the crystal oscillator generating circuit 40; the middle joint of the grid of the second MOS transistor IC2 and the fourth resistor R4 is grounded through the third resistor R3, and at the moment, when the second MOS transistor IC2 does not work, the grid of the second MOS transistor IC2 is at a low potential; the middle joint of the grid of the second MOS tube IC2 and the fourth resistor R4 is grounded through a tenth capacitor C10, and the tenth capacitor C10 plays a role in filtering, so that noise entering the second MOS tube IC2 can be reduced; the intermediate junction of the second variable resistor VR2 and the drain of the second MOS transistor IC2 is grounded through a ninth capacitor C9, and the ninth capacitor C9 performs a filtering function, so that noise transmitted to the crystal oscillator generating circuit 40 can be reduced.

The post-stage amplification circuit 50 includes a first MOS transistor IC1, a first capacitor C1, a second capacitor C2, a third capacitor C3, a sixteenth capacitor C16, a seventeenth capacitor C17, an eighteenth capacitor C18, a nineteenth capacitor C19, a first inductor L1, a second inductor L2, a third inductor L3, a fourth inductor L4, a first resistor R1, a second resistor R2, a first variable resistor VR1, a third variable resistor VR3, a diode D1, and a triode Q1.

In the post-stage amplifying circuit 50, one end of a first variable resistor VR1 is connected to the crystal oscillator generating circuit 40 and the modulation signal rising edge adjusting circuit 30, the other end of the first variable resistor VR1 is connected to the anode of a diode D1, the cathode of the diode D1 is connected to the gate of the first MOS transistor IC1, and the current entering the first MOS transistor IC1 is limited by the first variable resistor VR1 and the diode D1.

In the post-stage amplification circuit 50, the cathode of the diode D1 is connected to the gate of the first MOS transistor IC1, the source of the first MOS transistor IC1 is grounded, the drain of the first MOS transistor IC1 is connected to the fourth inductor L4, the other end of the fourth inductor L4 is connected to the second inductor L2, the other end of the second inductor L2 is connected to the first inductor L1, the other end of the first inductor L1 is connected to the first capacitor C1, and the other end of the first capacitor C1 is connected to an external circuit; when the level of the grid electrode input into the first MOS transistor IC1 is higher than 3V, the first MOS transistor IC1 is conducted, the source electrode of the 12V external voltage can be grounded through the first MOS transistor IC1, the potential at the drain electrode of the first MOS transistor IC1 is 0, so that the amplification effect is not realized, when the level of the grid electrode input into the first MOS transistor IC1 is lower than 3V, the MOS transistor is cut off, the 12V external voltage is not grounded, the potential at the drain electrode of the first MOS transistor IC1 is higher, a high-voltage signal is generated, and the process of converting a small signal into a large signal is realized.

In the post-stage amplification circuit 50, the base of the transistor Q1 is connected to the intermediate node where the first variable resistor VR1 is connected to the anode of the diode D1, the collector of the transistor Q1 is grounded, the emitter of the transistor Q1 is connected to the intermediate node where the cathode of the diode D1 is connected to the gate of the first MOS transistor IC1 through the third variable resistor VR3, the third variable resistor VR3 and the transistor Q1 are used for fast discharging, and when the first MOS transistor IC1 is turned off, the charge on the gate of the first MOS transistor IC1 can be quickly released through the third variable resistor VR3 and the transistor Q1.

In the post-stage amplification circuit 50, an intermediate junction of a fourth inductor L4 connected with a second inductor L2 is grounded through an eighteenth capacitor C18, an intermediate junction of a second inductor L2 connected with a first inductor L1 is grounded through a third capacitor C3, an intermediate junction of a first inductor L1 connected with a first capacitor C1 is grounded through a second capacitor C2, one end of a third inductor L3 is connected with an intermediate junction of a fourth inductor L4 connected with a second inductor L2, the other end of a third inductor L3 is connected with a first resistor R1, the other end of the first resistor R1 is connected with an external 12V power supply, and the first inductor L1, the second inductor L2, the third inductor L3, the fourth inductor L4, the second capacitor C2, the third capacitor C3 and the eighteenth capacitor C18 jointly form a high-frequency resonant output system.

In the rear-stage amplifying circuit 50, one end of a first resistor R1 is connected with a third inductor L3, the other end of a first resistor R1 is connected with an external power supply, the first resistor R1 and a second resistor R2 form a parallel structure, and the first resistor R1 and the second resistor R2 jointly limit the current of the external 12V power supply entering a high-frequency resonance output system; the nineteenth capacitor C19 and the first resistor R1 form a parallel structure, so as to avoid interference of high-frequency signals to an external power supply.

In the rear-stage amplification circuit 50, the intermediate junction of the first resistor R1 connected with the external 12V power supply is grounded through a sixteenth capacitor C16, the intermediate junction of the first resistor R1 connected with the external 12V power supply is grounded through a seventeenth capacitor C17, the sixteenth capacitor C16 and the seventeenth capacitor C17 both play a role in energy storage and filtering, and the sixteenth capacitor C16 and the seventeenth capacitor C17 provide a relatively stable power supply for the drain of the first MOS transistor IC1, so as to provide energy for the first MOS transistor IC1 during high-speed switching.

From the above description, the beneficial effects of the present invention are: the power module circuit 10 provides stable power for the modulation signal shaping circuit 20, the crystal oscillator generating circuit 40 and the modulation signal rising edge adjusting circuit 30, the modulation signal shaping circuit 20 shapes the initial modulation signal HF _ IN, removes partial noise, inputs the regular modulation signal U1_4 into the rising edge adjusting circuit, the modulation signal rising edge adjusting circuit 30 adjusts the shaped signal U1_4, removes partial noise and adjusts the rising edge of the modulation signal U1_4 to form a new modulation signal IC2_ D, the new modulation signal IC2_ D is combined with the high-frequency signal X1_ OUT generated by the crystal oscillator generating circuit 40, and the modulation signal IC2_ D is used for modulating the high-frequency signal X1_ OUT to generate a modulation high-frequency signal; the modulated high frequency signal is input to the post-amplification circuit 50 to form an amplified radio frequency signal, which drives the load to work.