阅读说明：本技术 高重复频率905nm调Q微片激光器 (High repetition frequency 905nm Q-switched microchip laser ) 是由 薛有为 丁广雷 张哨峰 于 2019-10-16 设计创作，主要内容包括：本发明公开了高重复频率905nm调Q微片激光器,其包括依序设置的半导体泵浦源；耦合系统；第一腔镜；增益介质；调Q晶体；第二腔镜；其中泵浦源发射的泵浦光,经耦合系统和第一腔镜,进入到增益介质,增益介质激发的光被调Q晶体部分吸收,在由第一腔镜和第二腔镜组成的激光腔内形成了调Q脉冲激光振荡输出。本发明使用短上能级寿命的掺钛蓝宝石晶体作为增益介质,以及恢复时间短的石墨烯作为调Q晶体,并采用脉冲泵浦方式,得到了稳定可调的高重复频率(100kHz~2MHz)和短脉宽(1~10ns)的激光输出。(The invention discloses a high repetition frequency 905nm Q-switched microchip laser, which comprises a semiconductor pumping source, a coupling system, a first cavity mirror, a gain medium, a Q-switched crystal and a second cavity mirror which are sequentially arranged, wherein pumping light emitted by the pumping source enters the gain medium through the coupling system and the first cavity mirror, the light excited by the gain medium is partially absorbed by the Q-switched crystal, and Q-switched pulse laser oscillation output is formed in a laser cavity formed by the first cavity mirror and the second cavity mirror.)

1. High repetition frequency 905nm transfers Q microchip laser, its characterized in that: it includes that set gradually:

the pumping source is used for providing pumping light, and the pumping adopts a pulse pumping mode;

a coupling system for coupling pump light into the laser cavity;

a first cavity mirror;

the gain medium is used for generating required 905nm laser radiation and is a titanium-doped sapphire crystal;

the Q-switched crystal is used for generating required Q-switched pulses and is graphene or Cr: YAG or Cr: YSO or V: YAG;

a second cavity mirror is arranged on the second cavity mirror,

and a laser resonant cavity is formed between the first cavity mirror and the second cavity mirror and is used for forming oscillation output by 905nm laser.

2. The high repetition frequency 905nm Q-switched microchip laser of claim 1, wherein: it also includes a plano-concave lens disposed behind the second cavity mirror or between the coupling system and the first cavity mirror.

3. The high repetition frequency 905nm Q-switched microchip laser of claim 1, wherein: the gain medium and the Q-switched crystal are glued into an integral structure; the first cavity mirror is plated with an antireflection film corresponding to the pumping wavelength and a total reflection film corresponding to the working wavelength, and the second cavity mirror is plated with a partial reflection film corresponding to the working wavelength.

4. The high repetition frequency 905nm Q-switched microchip laser of claim 1, wherein: the first cavity mirror is directly plated on the end face of the gain medium close to the gain medium, and the second cavity mirror is directly plated on the end face of the Q-switched crystal close to the Q-switched crystal.

5. The high repetition frequency 905nm Q-switched microchip laser of claim 1, wherein: the wavelength of the pumping light of the pumping source is 400-600 nm.

6. The high repetition frequency 905nm Q-switched microchip laser of claim 1, wherein: the pumping source is a semiconductor laser or a solid laser.

7. The high repetition frequency 905nm Q-switched microchip laser of claim 1, wherein: the coupling system is composed of more than one lens, and an antireflection film which is adaptive to the wavelength of the pump light emitted by the pump source is plated on the end face of the lens.

8. The high repetition frequency 905nm Q-switched microchip laser of claim 1, wherein: the gain medium can also be Cr: LiSAF or Cr: LiSGaF or Cr: LiCFF.

9. The high repetition frequency 905nm Q-switched microchip laser of claim 1, wherein: the output laser wavelength can be any wavelength of 600 nm-1100 nm of the emission spectrum of the titanium-doped sapphire of the gain medium.

10. The high repetition frequency 905nm Q-switched microchip laser of claim 1, wherein: and placing the gain medium behind a Q-switched crystal.

Technical Field

The invention relates to the technical field of laser detection devices, in particular to a high repetition frequency 905nm Q-switched microchip laser.

Background

The working principle of the laser radar is as follows: and emitting laser to the detection target, then reflecting the laser by the target, and detecting the reflected light by a radar detector to obtain information such as the distance, the angle, the height, the shape and the like of the target. At present, most of laser radars use a TOF method for detection, and the detection capability of the laser radars has a great relationship with the quality of a laser beam emitted by the laser radars. At present, most of laser radars use a 905nm semiconductor laser as a transmitting light source, and because the M square factor of the semiconductor laser in the slow axis direction is far greater than the diffraction limit, the quality of the emitted laser beams is poor, and the detection capability of the laser radars is greatly limited. The common passive Q-switched solid laser has the problem of low repetition frequency.

Disclosure of Invention

Based on the state of the art, the present invention aims to provide a high repetition frequency 905nm Q-switched microchip laser.

In order to achieve the technical purpose, the invention adopts the technical scheme that:

high repetition frequency 905nm Q-switched microchip laser, it includes setting up in proper order:

the pumping source is used for providing pumping light, and the pumping adopts a pulse pumping mode;

a coupling system for coupling pump light into the laser cavity;

a first cavity mirror;

the gain medium is used for generating required 905nm laser radiation and is a titanium-doped sapphire crystal;

the Q-switched crystal is used for generating required Q-switched pulses and is graphene or Cr: YAG or Cr: YSO or V: YAG;

a second cavity mirror is arranged on the second cavity mirror,

and a laser resonant cavity is formed between the first cavity mirror and the second cavity mirror and is used for forming oscillation output by 905nm laser.

Further, the device also comprises a plano-concave lens which is arranged behind the second cavity mirror or between the coupling system and the first cavity mirror.

Further, the gain medium and the Q-switched crystal are glued into an integral structure.

Furthermore, the first cavity mirror is plated with an antireflection film corresponding to the pumping wavelength and a total reflection film corresponding to the working wavelength, and the second cavity mirror is plated with a partial reflection film corresponding to the working wavelength.

As a preferable implementation form of the first cavity mirror and the second cavity mirror, further, the first cavity mirror is directly plated on the end surface of the gain medium close to the first cavity mirror, and the second cavity mirror is directly plated on the end surface of the Q-switched crystal close to the second cavity mirror.

Furthermore, the wavelength of the pumping light of the pumping source is 400-600 nm.

Further, the pumping source is a semiconductor laser or a solid laser.

Furthermore, the coupling system is composed of more than one lens, and an antireflection film which is adaptive to the wavelength of the pump light emitted by the pump source is plated on the end face of the lens.

Further, the gain medium can also be Cr: LiSAF or Cr: LiSGaF or Cr: LiCFA.

Further, the output laser wavelength can be any wavelength of the gain medium titanium-doped sapphire emission spectrum 600-1100 nm.

As an extension of this solution, on the basis of the above, the gain medium may be placed after the Q-switched crystal.

By adopting the technical scheme, compared with the prior art, the laser radar has the beneficial effects that the pulse pumping mode, the titanium-doped sapphire crystal with short upper energy level service life as a gain medium and the saturable absorber with short recovery time as a Q-switched crystal are adopted, so that the repetition frequency of the output 905nm laser can be 100kHz ~ 2MHz, the repetition frequency is stable and adjustable, the beam quality is greatly improved, and the M square factor is close to the diffraction limit, thereby improving the detection capability of the laser radar.

Drawings

The invention will be further elucidated with reference to the drawings and the detailed description:

FIG. 1 is a schematic diagram of an embodiment 1 of a high repetition frequency 905nm Q-switched microchip laser according to the present invention;

FIG. 2 is a schematic diagram of an embodiment 2 of a high repetition frequency 905nm Q-switched microchip laser of the present invention;

FIG. 3 shows an embodiment 3 of a high repetition frequency 905nm Q-switched microchip laser.

Detailed Description