阅读说明：本技术 薄膜、组合物的制造方法、固化物的制造方法及薄膜的制造方法 (Thin film, method for producing composition, method for producing cured product, and method for producing thin film ) 是由 有村孝 宫本刚志 内藤翔太 于 2018-05-17 设计创作，主要内容包括：本发明涉及由包含(1)、(2)及(4)的组合物所构成的膜,其具有海岛状相分离结构；在前述海岛状相分离结构中,分别地(4)存在于海状疏水性区域,(1)及(2)存在于岛状亲水性区域；前述岛状亲水性区域为0.1μm以上100μm以下。(1)为具有发光性的半导体微粒；(2)为硅氮烷或其改性体；(4)为聚合性化合物或聚合物。(The present invention relates to a film comprising a composition comprising (1), (2) and (4), which has a sea-island phase separation structure; in the sea-island phase separation structure, (4) exists in a sea-like hydrophobic region, and (1) and (2) exist in an island-like hydrophilic region, respectively; the island-like hydrophilic region is 0.1 to 100 μm. (1) Semiconductor particles having a light-emitting property; (2) is a silazane or a modification thereof; (4) is a polymerizable compound or polymer.)

1. A film comprising a composition comprising (1), (2) and (4),

it has a sea-island phase separation structure;

in the sea-island phase separation structure, (4) exists in the sea-like hydrophobic region, (1) and (2) exists in the island-like hydrophilic region;

the island-shaped hydrophilic region is 0.1-100 μm;

(1) the light-emitting semiconductor particles are (1) silazane or a modified silazane, (2) a polymerizable compound or a polymer.

2. The thin film according to claim 1, wherein (1) is a compound having a perovskite crystal structure containing A, B and X as constituent elements;

a is a component located at each vertex of a hexahedron centered on B in the perovskite crystal structure, and is a 1-valent cation; x represents a component located at each vertex of an octahedron centering on B in the perovskite crystal structure, and is at least 1 kind of anion selected from the group consisting of halide ion and thiocyanate ion; b is a component located at the center of a hexahedron with a disposed at the apex and an octahedron with X disposed at the apex in the perovskite crystal structure, and is a metal ion.

3. The film according to claim 1 or 2, wherein a difference D between an emission wavelength PLtop and an energy value of a band edge Eg is 0.2 or less.

4. A method of making a composition comprising: a step of mixing (1), (2) and (4) in the presence of (3); (1) the light-emitting semiconductor particles are (1) luminous semiconductor particles, (2) silazane or a modified silazane, (3) a solvent, and (4) a polymerizable compound or a polymer.

5. A method of making the composition of claim 4, comprising: a step of dispersing (1) in (3) to obtain a dispersion, and a step of mixing the dispersion with (2) and (4).

6. A method of making the composition of claim 5, comprising: a step of dispersing (1) in (3) to obtain a dispersion liquid, a step of mixing the dispersion liquid with (2) to obtain a mixed liquid, and a step of mixing the mixed liquid with (4).

7. A method of making the composition of claim 5, comprising: a step of dispersing (1) in (3) to obtain a dispersion liquid, a step of mixing the dispersion liquid with (2') to obtain a mixed liquid, a step of subjecting the mixed liquid to a modification treatment to obtain a mixed liquid containing a modified silane, and a step of mixing the mixed liquid containing a modified silane with (4); wherein (2') is a silazane.

8. A method for producing a cured product, comprising: a step of dispersing (1) in (3) to obtain a dispersion liquid, a step of mixing the dispersion liquid with (2') to obtain a mixed liquid, a step of subjecting the mixed liquid to a modification treatment to obtain a mixed liquid containing a silazane modification, a step of mixing the mixed liquid containing a silazane modification with (4") to obtain a composition, and a step of removing (3) from the composition; wherein (1) is a semiconductor particle having a light-emitting property; (2') is a silazane; (3) is a solvent; (4') is a polymer.

9. A method of making a thin film, comprising: a step of dispersing (1) in (3) to obtain a dispersion liquid, a step of mixing the dispersion liquid with (2') to obtain a mixed liquid, a step of subjecting the mixed liquid to a modification treatment to obtain a mixed liquid containing a modified silane, a step of mixing the mixed liquid containing a modified silane with (4") to obtain a composition, a step of applying the composition to a substrate to obtain a coating film, and a step of removing (3) from the coating film; wherein (1) is a semiconductor particle having a light-emitting property; (2') is a silazane; (3) is a solvent; (4') is a polymer.

Technical Field

The present invention relates to a film, a method for producing a composition, a method for producing a cured product, and a method for producing a film.

The present application claims priority based on Japanese application No. 2017-097962 filed 5/17/2017, the contents of which are incorporated herein by reference.

Background

In recent years, attention has been increasingly focused on a thin film containing light-emitting semiconductor fine particles. Since semiconductor fine particles are known to deteriorate due to exposure to water vapor, development of a thin film having durability to water vapor and a composition used for producing the thin film are required.

Therefore, as a method for producing the composition, for example, there has been reported a method including a step of mixing ZnS-coated InP semiconductor fine particles with perhydropolysilazane and drying the mixture to obtain perhydropolysilazane-coated semiconductor fine particles; dispersing the semiconductor fine particles coated with the perhydropolysilazane in toluene to obtain a dispersion; and a method for producing the same by mixing a UV curable resin with the dispersion (patent document 1).

[ Prior art documents ]

[ patent document ]

Patent document 1: international publication No. 2014/196319

Disclosure of Invention

[ problems to be solved by the invention ]

However, the film produced using the composition described in patent document 1 is not necessarily sufficient in durability against water vapor.

Further, the method for producing the composition described in patent document 1 requires many steps, and thus has a problem of high cost in mass production.

In view of the above problems, an object of the present invention is to provide a film having durability against water vapor. Further, it is an object to provide a method for producing a composition having durability to water vapor, a cured product and a film by a simple process.

[ means for solving problems ]

As a result of intensive studies to solve the above problems, the present inventors have completed the following invention.

That is, the embodiments of the present invention include the following inventions [1] to [9 ].

[1] A film comprising a composition comprising (1), (2) and (4), which has a sea-island phase separation structure; in the sea-island phase separation structure, (4) exists in a sea-like hydrophobic region, (1) and (2) exists in an island-like hydrophilic region; the island-like hydrophilic region is 0.1 to 100 μm; (1) semiconductor particles having a light-emitting property; (2) is a silazane or a modification thereof; (4) is a polymerizable compound or polymer.

[2] The thin film according to [1], wherein (1) is a compound having a perovskite crystal structure containing A, B and X as constituents; (A is a 1-valent cation, X is a 1-valent cation, which is a component located at each vertex of a hexahedron centered on B, and is at least one anion selected from the group consisting of halide ions and thiocyanate ions, in the perovskite crystal structure; B is a metal ion, which is a component located at the center of the hexahedron having A at the vertex and the octahedron having X at the vertex, in the perovskite crystal structure).

[3] The film according to [1] or [2], wherein the difference D between the energy values of the emission wavelength PLtop and the band edge Eg is 0.2 or less.

[4] A method of making a composition comprising: a step of mixing (1), (2) and (4) in the presence of (3); (1) semiconductor particles having a light-emitting property; (2) is a silazane or a modification thereof; (3) is a solvent; (4) is a polymerizable compound or polymer.

[5] A method for producing the composition according to [4], which comprises: a step of dispersing (1) in (3) to obtain a dispersion, and a step of mixing the dispersion with (2) and (4).

[6] A method for producing the composition according to [5], which comprises: a step of dispersing (1) in (3) to obtain a dispersion liquid, a step of mixing the dispersion liquid with (2) to obtain a mixed liquid, and a step of mixing the mixed liquid with (4).

[7] A method for producing the composition according to [5], which comprises: a step of dispersing (1) in (3) to obtain a dispersion liquid, a step of mixing the dispersion liquid with (2') to obtain a mixed liquid, a step of subjecting the mixed liquid to a modification treatment to obtain a mixed liquid containing a modified silane, and a step of mixing the mixed liquid containing a modified silane with (4); wherein (2') is a silazane.

[8] A method for producing a cured product, comprising: a step of dispersing (1) in (3) to obtain a dispersion liquid, a step of mixing the dispersion liquid with (2') to obtain a mixed liquid, a step of subjecting the mixed liquid to a modification treatment to obtain a mixed liquid containing a modified silane, a step of mixing the mixed liquid containing a modified silane with (4") to obtain a composition, and a step of removing (3) from the composition; wherein (1) is a semiconductor particle having a light-emitting property; (2') is a silazane; (3) is a solvent; (4') is a polymer.

[9] A method of making a thin film, comprising: a step of dispersing (1) in (3) to obtain a dispersion liquid, a step of mixing the dispersion liquid with (2') to obtain a mixed liquid, a step of subjecting the mixed liquid to a modification treatment to obtain a mixed liquid containing a modified silane, a step of mixing the mixed liquid containing a modified silane with (4") to obtain a composition, a step of applying the composition to a substrate to obtain a coating film, and a step of removing (3) from the coating film; wherein (1) is a semiconductor particle having a light-emitting property; (2') is a silazane; (3) is a solvent; (4') is a polymer.

ADVANTAGEOUS EFFECTS OF INVENTION

According to the present invention, a film having durability to water vapor, and a method for producing a composition, a cured product, and a film having durability to water vapor by a simple process can be provided.

Drawings

Fig. 1 is a cross-sectional view showing an embodiment of a laminated structure according to the present invention.

Fig. 2 is a cross-sectional view showing an embodiment of a display according to the present invention.

FIG. 3 is a TEM image of a cured product (thin film) according to the present invention obtained in example 1.

FIG. 4 is a TEM image of a cured product (thin film) according to the present invention obtained in example 2.

FIG. 5 is a TEM image of a cured product (thin film) according to the present invention obtained in example 3.

FIG. 6 is a TEM image of a cured product (thin film) according to the present invention obtained in example 5.

FIG. 7 is a TEM image of a cured product (thin film) according to the present invention obtained in example 7.

Detailed Description

The present invention will be described in detail below with reference to embodiments.

(1) Semiconductor fine particles

The semiconductor fine particles of the present invention have a light-emitting property. The term "luminescence" refers to the property of luminescence. The luminescence property is more preferably a property of luminescence by electron excitation, and more preferably a property of luminescence by electron excitation by excitation light. The wavelength of the excitation light may be, for example, 200nm to 800nm, 250nm to 700nm, or 300nm to 600 nm.

Hereinafter, description will be given of (1) in an embodiment: (1-1) semiconductor fine particles containing a group II-V compound, semiconductor fine particles containing a group II-VI compound, semiconductor fine particles containing a group III-IV compound, semiconductor fine particles containing a group III-V compound, semiconductor fine particles containing a group III-VI compound, semiconductor fine particles containing a group IV-VI compound and semiconductor fine particles containing a group I-III-VI compound, and (1-2) semiconductor fine particles containing a perovskite compound. The (1) is not limited to the following semiconductor fine particles.

From the viewpoint of obtaining a good quantum yield, (1) semiconductor fine particles comprising a compound containing a cadmium (column 12) element, semiconductor fine particles comprising a compound containing an indium (column 13) element, and semiconductor fine particles comprising a perovskite compound are preferable, and semiconductor fine particles comprising a compound containing an indium (column 13) element and semiconductor fine particles comprising a perovskite compound are more preferable, and from the viewpoint of ease of obtaining a narrow emission peak of half-value width from the point of not strictly controlling particle diameter, semiconductor fine particles comprising a perovskite compound are further preferable.

(1-1) semiconductor particles containing a group II-V compound, semiconductor particles containing a group II-VI compound, semiconductor particles containing a group III-IV compound, semiconductor particles containing a group III-V compound, semiconductor particles containing a group III-VI compound, semiconductor particles containing a group IV-VI compound, and semiconductor particles containing a group I-III-VI compound

Group II-V compounds refer to compounds comprising a group II element and a group V element; group II-VI compounds refer to compounds comprising a group II element and a group VI element; group III-IV compounds refer to compounds comprising a group III element and a group IV element; the group III-V compound means a compound containing a group III element and a group V element; group III-VI compounds refer to compounds comprising a group III element and a group VI element; group IV-VI compounds refer to compounds comprising a group IV element and a group VI element; the group I-III-VI compound means a compound containing a group I element, a group III element and a group VI element.

Here, group I means group 11 of the periodic table, group II means group 2 or group 12 of the periodic table, group III means group 13 of the periodic table, group IV means group 14 of the periodic table, group V means group 15 of the periodic table, and group VI means group 16 of the periodic table (the same applies hereinafter).

In the present specification, the term "periodic table" refers to a long periodic table.

These compounds may be binary, ternary or quaternary, respectively.

(semiconductor particles comprising II-V group Compound)

Examples of the binary group II-V compound include Zn₃P₂、Zn₃As₂、Cd₃P₂、Cd₃As₂、Cd₃N₂And Zn₃N2。

The ternary system group II-V compound may be a ternary system group II-V compound containing 1 element (element 1) selected from group 2 or group 12 of the periodic table and 2 elements (element 2) selected from group 15 of the periodic table, and may also be a ternary system group II-V compound containing 2 elements (element 1) selected from group 2 or group 12 of the periodic table and 1 element (element 2) selected from group 15 of the periodic table. As the ternary system group II-V compound, for example, Cd₃PN、Cd₃PAs、Cd₃AsN、Cd₂ZnP₂、Cd₂ZnAs₂And Cd₂ZnN₂And the like.

The quaternary system II-V group compound may be a quaternary system II-V group compound containing 2 elements (1 st element) selected from group 2 or group 12 of the periodic table and 2 elements (2 nd element) selected from group 15 of the periodic table. Examples of quaternary II-V compounds include CdZnPN, CdZnPAs and Cd₂ZnAsN and the like.

The semiconductor fine particles containing a group II-V compound may contain, as a doping element, an element other than those of group 2, group 12 and group 15 of the periodic table.

(semiconductor particles comprising II-VI group Compound)

Examples of the binary group II-VI compounds containing group 12 elements of the periodic table include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, and HgTe.

Examples of the binary group II-VI compounds containing group 2 elements of the periodic table include MgS, MgSe, Mg Te, CaS, CaSe, CATE, SrS, SrSe, SrTe, BaS, BaSe, and BaTe.

The ternary system group II-VI compound may be a ternary system group II-VI compound containing 1 element (element 1) selected from group 2 or group 12 of the periodic table and 2 elements (element 2) selected from group 16 of the periodic table, and may also be a ternary system group II-VI compound containing 2 elements (element 1) selected from group 2 or group 12 of the periodic table and 1 element (element 2) selected from group 16 of the periodic table. Examples of the ternary group II-VI compound include CdSeS, CdSeTe, CdSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe and CdHgTe.

The quaternary system II-VI compound may be a quaternary system II-VI compound containing 2 elements (1 st element) selected from group 2 or group 12 of the periodic table and 2 elements (2 nd element) selected from group 16 of the periodic table. Examples of the quaternary II-VI compound include CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSe Te and CdHgSTe.

The semiconductor fine particles containing a group II-VI compound may contain, as a doping element, an element other than those of group 2, group 12 and group 16 of the periodic table.

(semiconductor particles containing group III-IV Compound)

The binary group III-IV compound includes, for example, B₄C₃、Al₄C₃And Ga₄C₃。

The ternary system group III-IV compound may be a ternary system group III-IV compound containing 1 element (element 1) selected from group 13 of the periodic table and 2 elements (element 2) selected from group 14 of the periodic table, and may also be a ternary system group III-IV compound containing 2 elements (element 1) selected from group 13 of the periodic table and 1 element (element 2) selected from group 14 of the periodic table.

The quaternary III-IV compound may be a quaternary III-IV compound containing 2 elements (1 st element) selected from group 13 of the periodic table and 2 elements (2 nd element) selected from group 14 of the periodic table.

The semiconductor fine particles containing a group III-IV compound may contain, as a doping element, an element other than those of group 13 and group 14 of the periodic table.

(semiconductor particles containing a group III-V Compound)

Examples of the binary group III-V compound include BP, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, AlN, and BN.

The ternary system group III-V compound may be a ternary system group III-V compound containing 1 element (element 1) selected from group 13 of the periodic table and 2 elements (element 2) selected from group 15 of the periodic table, and may also be a ternary system group III-V compound containing 2 elements (element 1) selected from group 13 of the periodic table and 1 element (element 2) selected from group 15 of the periodic table. Examples of the ternary III-V group compounds include InPN, InPAs, InPSb, and InGaP.

The quaternary III-V group compound may be a quaternary III-V group compound containing 2 elements (1 st element) selected from group 13 of the periodic table and 2 elements (2 nd element) selected from group 15 of the periodic table. Examples of the quaternary III-V compound include InGaPN, InGaPAs, and InGaPSb.

The semiconductor fine particles containing a III-V group compound may contain, as a doping element, an element other than those of group 13 and group 15 of the periodic table.

In one aspect of the present invention, InP is more preferred as the group III-V compound.

(semiconductor particles comprising a group III-VI compound)

Examples of the binary group III-VI compounds include Al₂S₃、Al₂Se₃、Al₂Te₃、Ga₂S₃、Ga₂Se₃、Ga₂Te₃、GaTe、In₂S₃、In₂Se₃、In₂Te₃And InTe.

The ternary system group III-VI compound may be a ternary system group III-VI compound containing 1 element (element 1) selected from group 13 of the periodic table and 2 elements (element 2) selected from group 16 of the periodic table, or may be a ternary system group III-VI compound containing 2 elements (element 1) selected from group 13 of the periodic table and 1 element (element 2) selected from group 16 of the periodic tableA series of III-VI compounds. As the ternary group III-VI compound, for example, InGaS is mentioned₃、InGaSe₃、InGaTe₃、In₂SSe₂And In₂TeSe₂。

The quaternary III-VI compound may be a quaternary III-VI compound containing 2 elements (1 st element) selected from group 13 of the periodic table and 2 elements (2 nd element) selected from group 16 of the periodic table. As the quaternary system group III-VI compound, for example, InGaSSe is mentioned₂、InGaSeTe₂And InGaSTe₂。

The semiconductor fine particles containing a group III-VI compound may contain, as a doping element, an element other than those of group 13 and group 16 of the periodic table.

(semiconductor particles comprising group IV-VI Compound)

Examples of the binary group IV-VI compounds include PbS, PbSe, PbTe, SnS, SnSe, and SnTe.

The ternary system group IV-VI compound may be a ternary system group IV-VI compound containing 1 element (element 1) selected from group 14 of the periodic table and 2 elements (element 2) selected from group 16 of the periodic table, and may also be a ternary system group IV-VI compound containing 2 elements (element 1) selected from group 14 of the periodic table and 1 element (element 2) selected from group 16 of the periodic table.

The quaternary III-VI compound may be a quaternary IV-VI compound containing 2 elements (1 st element) selected from column 14 of the periodic table and 2 elements (2 nd element) selected from column 16 of the periodic table.

The semiconductor particles containing a group IV-VI compound may contain, as a doping element, an element other than those of group 14 and group 16 of the periodic table.

(I-III-VI Compound)

As the ternary system group I-III-VI compound, for example, CuInS is exemplified₂。

The semiconductor fine particles containing a group I-III-VI compound may contain, as a doping element, an element other than those of group 11, group 13 and group 16 of the periodic table.

(1-2) semiconductor Fine particles comprising perovskite Compound

As an example of the semiconductor fine particles, for example, semiconductor fine particles containing a perovskite compound are cited.

The perovskite compound is a compound having A, B and X as constituent components and having a perovskite crystal structure.

In the present invention, a is a component located at each vertex of a hexahedron centered on B in the perovskite crystal structure, and is a 1-valent cation.

X is a component located at each vertex of an octahedron centering on B in the perovskite crystal structure, and is at least 1 kind of anion selected from the group consisting of halide ion and thiocyanate ion.

B is a component located at the center of a hexahedron with a disposed at the apex and an octahedron with X disposed at the apex in the perovskite crystal structure, and is a metal ion.

The perovskite compound containing A, B and X as constituent components is not particularly limited, and may be a compound having any of a 3-dimensional structure, a 2-dimensional structure, and a quasi-2-dimensional structure.

In the case of a 3-dimensional structure, the compositional formula of the perovskite compound is represented by ABX_(3+δ)。

In the case of a 2-dimensional structure, the compositional formula of the perovskite compound is represented by A₂BX_(4+δ)。

Here, δ is a number that can be changed as appropriate depending on the charge balance of B, and is from-0.7 to 0.7.

For example, when a is a cation having a valence of 1, B is a cation having a valence of 2, and X is an anion having a valence of 1, δ is selected so that the compound becomes electrically neutral (that is, the charge of the compound is 0).

In the case of the 3-dimensional structure, B is the center, and the vertex is X, and BX is the center₆A 3-dimensional network of common vertex octahedra is shown.

In the case of the 2-dimensional structure, BX is formed with B as the center and the vertex X as the center₆The octahedrons being represented as two-dimensionally connected by 4 vertices X sharing the same planeBX₆The layers A and B are alternately stacked.

B is a metal cation capable of coordination with the octahedron of X.

In the present specification, the perovskite crystal structure can be confirmed by an X-ray diffraction pattern.

In the case of a compound having a perovskite crystal structure of the 3-dimensional structure, a peak derived from (hkl) ═ 001 is generally observed at a position where 2 θ is 12 to 18 ° or a peak derived from (hkl) ═ 110 is observed at a position where 2 θ is 18 to 25 ° in an X-ray diffraction pattern. More preferably, a peak derived from (hkl) ═ 001 is observed at a position where 2 θ is 13 to 16 °, or a peak derived from (hkl) ═ 110 is observed at a position where 2 θ is 20 to 23 °.

In the case of a compound having a perovskite crystal structure of the 2-dimensional structure, it is more preferable that a peak derived from (hkl) ═ (002) is observed at a position of 2 θ ═ 1 to 10 ° in an X-ray diffraction pattern. A peak derived from (hkl) ═ (002) was observed at a position of 2 θ ═ 2 to 8 °.

The perovskite compound is preferably a perovskite compound represented by the following general formula (P1).

ABX_(3+δ)(-0.7≤δ≤0.7)…(P1)

A is a component located at each vertex of a hexahedron centered on B in the perovskite crystal structure, and is a 1-valent cation.

X is a component located at each vertex of an octahedron centering on B in the perovskite crystal structure, and is at least 1 kind of anion selected from the group consisting of halide ion and thiocyanate ion.

B is a component located at the center of a hexahedron with a disposed at the apex and an octahedron with X disposed at the apex in the perovskite crystal structure, and is a metal ion.

(A)

In the perovskite compound, a is a component located at each vertex of a hexahedron centered on B in the perovskite crystal structure, and is a 1-valent cation. Examples of the cation having a valence of 1 include cesium ion, organic ammonium ion, and amidinium ion. In the case of the perovskite compound,when A is cesium ion, an organic ammonium ion having not more than 3 carbon atoms, or an amidinium ion having not more than 3 carbon atoms, the perovskite compound generally has ABX_(3+δ)The 3-dimensional structure of the representation.

A in the perovskite compound is more preferably cesium ion or organic ammonium ion.

The organic ammonium ion of A is specifically, for example, a cation represented by the following general formula (A1).

[ solution 1]

In the general formula (A1), R⁶～R⁹Each independently represents a hydrogen atom, an alkyl group which may have an amino group as a substituent, or a cycloalkyl group which may have an amino group as a substituent. However, R⁶～R⁹Not all hydrogen atoms.

From R⁶～R⁹The alkyl groups represented by the above formulae may be each independently linear or branched, and may have an amino group as a substituent.

R⁶～R⁹In the case of an alkyl group, the number of carbon atoms is usually 1 to 20, preferably 1 to 4, more preferably 1 to 3, and still more preferably 1.

From R⁶～R⁹The cycloalkyl groups represented by the above formulae may each independently have an alkyl group as a substituent, or may have an amino group as a substituent.

From R⁶～R⁹The number of carbon atoms of the cycloalkyl group is usually 3 to 30, preferably 3 to 11, and more preferably 3 to 8. The number of carbon atoms also includes the number of carbon atoms of the substituent.

As a group consisting of R⁶～R⁹The groups represented are preferably each independently a hydrogen atom or an alkyl group.

By reducing the number of alkyl groups and cycloalkyl groups contained in the general formula (a1) and reducing the number of carbon atoms in the alkyl groups and cycloalkyl groups, a compound having a perovskite crystal structure with a 3-dimensional structure with high emission intensity can be obtained.

When the number of carbon atoms of the alkyl group or the cycloalkyl group is 4 or more, a compound having a perovskite crystal structure of 2 dimensions and/or quasi 2 dimensions (quasi-2D) in part or in whole can be obtained. If the 2-dimensional perovskite-type crystal structure is stacked without limitation, it is equivalent to the 3-dimensional perovskite-type crystal structure (references: P.P.Boix et al, J.Phys.chem.Lett.2015, 6, 898-907, etc.).

R⁶～R⁹The total number of carbon atoms contained in the alkyl group and the cycloalkyl group is preferably 1 to 4, and R is more preferably⁶～R⁹1 in the above group is an alkyl group having 1 to 3 carbon atoms, R⁶～R⁹3 of which are hydrogen atoms.

As R⁶～R⁹Examples of the alkyl group of (a) include a methyl group, an ethyl group, a n-propyl group, an isopropyl group, a n-butyl group, an isobutyl group, a sec-butyl group, a tert-butyl group, a n-pentyl group, an isopentyl group, a neopentyl group, a tert-pentyl group, a 1-methylbutyl group, a n-hexyl group, a 2-methylpentyl group, a 3-methylpentyl group, a2, 2-dimethylbutyl group, a2, 3-dimethylbutyl group, a n-heptyl group, a 2-methylhexyl group, a 3-methylhexyl group, a2, 2-dimethylpentyl group, a2, 3-dimethylpentyl group, a2, 4-dimethylpentyl group, a3, 3-dimethylpentyl group, a 3-ethylpentyl group, a2, 2, 3-trimethylbutyl group, a n-, Octadecyl, nonadecyl, eicosyl.

As R⁶～R⁹Can be independently mentioned by R⁶～R⁹Examples of the alkyl group in (1) include cycloalkyl groups having a cyclic ring structure, and include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, cyclononyl, cyclodecyl, norbornyl, isobornyl, 1-adamantyl, 2-adamantyl, tricyclodecyl and the like.

As the organic ammonium ion represented by A, CH is preferable₃NH₃ ⁺(also referred to as methylammonium ion.), C₂H₅NH₃ ⁺(also known as ethylammonium ion.) or C₃H₇NH₃ ⁺(also known as propane)And (4) basic ammonium ions. ) More preferably CH₃NH₃ ⁺Or C₂H₅NH₃ ⁺Further, CH is preferable₃NH₃ ⁺。

Examples of the amidinium ion represented by A include an amidinium ion represented by the following general formula (A2).

(R¹⁰R¹¹N＝CH-NR¹²R¹³)⁺···(A2)

In the general formula (A2), R¹⁰～R¹³Each independently represents a hydrogen atom, an alkyl group which may have an amino group as a substituent, or a cycloalkyl group which may have an amino group as a substituent.

R¹⁰～R¹³The alkyl groups represented by the above formulae may be each independently linear or branched, and may have an amino group as a substituent.

R¹⁰～R¹³The number of carbon atoms of the alkyl group is usually 1 to 20, preferably 1 to 4, and more preferably 1 to 3.

From R¹⁰～R¹³The cycloalkyl groups represented by the above formulae may each independently have an alkyl group as a substituent, or may have an amino group as a substituent.

R¹⁰～R¹³The number of carbon atoms of the cycloalkyl group is usually 3 to 30, preferably 3 to 11, and more preferably 3 to 8. The number of carbon atoms includes the number of carbon atoms of the substituent.

As R¹⁰～R¹³Specific examples of the alkyl group of (1) include R⁶～R⁹The alkyl group exemplified in (1).

As R¹⁰～R¹³Specific examples of the cycloalkyl group of (1) include R and R independently⁶～R⁹Cycloalkyl groups exemplified in (1).

As R¹⁰～R¹³The groups shown are each independently preferably a hydrogen atom or an alkyl group.

By reducing the number of alkyl groups and cycloalkyl groups contained in the general formula (a2) and reducing the number of carbon atoms in the alkyl groups and cycloalkyl groups, a perovskite compound having a 3-dimensional structure with high emission intensity can be obtained.

When the number of carbon atoms of the alkyl group or the cycloalkyl group is 4 or more, a compound having a perovskite crystal structure of 2 dimensions and/or quasi 2 dimensions (quasi-2D) in part or in whole can be obtained.

R¹⁰～R¹³The total number of carbon atoms contained in the alkyl group and the cycloalkyl group is preferably 1 to 4, and R is more preferably¹⁰Is an alkyl group having 1 to 3 carbon atoms, R¹¹～R¹³Is a hydrogen atom.

(B)

In the perovskite compound, B is a component located at the center of a hexahedron having a vertex a and an octahedron having an vertex X in the perovskite crystal structure, and is a metal ion. The B metal ion may be an ion composed of 1 or more species selected from the group consisting of a 1-valent metal ion, a 2-valent metal ion, and a 3-valent metal ion. Preferably, B comprises a metal ion having a valence of 2, more preferably at least 1 selected from the group consisting of lead or tin.

(X)

In the perovskite compound, X represents a component located at each vertex of an octahedron centering on B in the perovskite crystal structure, and is at least 1 kind of anion selected from the group consisting of halide ions and thiocyanate ions.

X may be at least 1 anion selected from the group consisting of chloride ion, bromide ion, fluoride ion, iodide ion, and thiocyanate ion.

X may be appropriately selected depending on the desired light emission wavelength, and for example, X may contain bromide ions.

When X is 2 or more types of halide ions, the content ratio of the halide ions may be appropriately selected according to the emission wavelength. For example, a combination of bromide ion and chloride ion, or a combination of bromide ion and iodide ion may be used.

As perovskite compounds, from ABX_(3+δ)As a specific example of the compound having a perovskite crystal structure of a 3-dimensional structure, CH is preferably mentioned₃NH₃PbBr₃、CH₃NH₃PbCl₃、CH₃NH₃PbI₃、CH₃NH₃PbBr_(3-y)I_y(0＜y＜3)、CH₃NH₃PbBr_(3-y)Cl_y(0＜y＜3)、(H₂N＝CH-NH₂)PbBr₃、(H₂N＝CH-NH₂)PbCl₃、(H₂N＝CH-NH₂)PbI₃、

CH₃NH₃Pb_(1-a)Ca_aBr₃(0＜a≦0.7)、CH₃NH₃Pb_(1-a)Sr_aBr₃(0＜a≦0.7)、CH₃NH₃Pb_(1-a)La_aBr_(3+δ)(0＜a≦0.7,0＜δ≦0.7)、CH₃NH₃Pb_(1-a)Ba_aBr₃(0＜a≦0.7)、CH₃NH₃Pb_(1-a)Dy_aBr_(3+δ)(0＜a≦0.7,0＜δ≦0.7)、CH₃NH₃Pb_(1-a)Na_aBr_(3+δ)(0＜a≦0.7,-0.7≦δ＜0)、CH₃NH₃Pb_(1-a)Li_aBr_(3+δ)(0＜a≦0.7,-0.7≦δ＜0)、CsPb_(1-a)Na_aBr_(3+δ)(0＜a≦0.7,-0.7≦δ＜0)、CsPb_(1-a)Li_aBr_(3+δ)(0＜a≦0.7,-0.7≦δ＜0)、CH₃NH₃Pb_(1-a)Na_aBr_(3+δ-y)I_y(0＜a≦0.7,-0.7≦δ＜0,0＜y＜3)、CH₃NH₃Pb_(1-a)Li_aBr_(3+δ-y)I_y(0＜a≦0.7,-0.7≦δ＜0,0＜y＜3)、CH₃NH₃Pb_(1-a)Na_aBr_(3+δ-y)Cl_y(0＜a≦0.7,-0.7≦δ＜0,0＜y＜3)、CH₃NH₃Pb_(1-a)Li_aBr_(3+δ-y)Cl_y(0＜a≦0.7,-0.7≦δ＜0,0＜y＜3)、(H₂N＝CH-NH₂)Pb_(1-a)Na_aBr_(3+δ)(0＜a≦0.7,-0.7≦δ＜0)、(H₂N＝CH-NH₂)Pb_(1-a)Li_aBr_(3+δ)(0＜a≦0.7,-0.7≦δ＜0)、(H₂N＝CH-NH₂)Pb_(1-a)Na_aBr_(3+δ-y)I_y(0＜a≦0.7,-0.7≦δ＜0,0＜y＜3)、(H₂N＝CH-NH₂)Pb_(1-a)Na_aBr_(3+δ-y)Cl_y(0＜a≦0.7,-0.7≦δ＜0,0＜y＜3)、CsPbBr₃、CsPbCl₃、CsPbI₃、CsPbBr_(3-y)I_y(0＜y＜3)、CsPbBr_(3-y)Cl_y(0＜y＜3)、CH₃NH₃PbBr_(3-y)Cl_y(0＜y＜3)、CH₃NH₃Pb_(1-a)Zn_aBr₃(0＜a≦0.7)、CH₃NH₃Pb_(1-a)Al_aBr_(3+δ)(0＜a≦0.7、0≦δ≦0.7)、CH₃NH₃Pb_(1-a)Co_aBr₃(0＜a≦0.7)、CH₃NH₃Pb_(1-a)Mn_aBr₃(0＜a≦0.7)、CH₃NH₃Pb_(1-a)Mg_aBr₃(0＜a≦0.7)、CsPb_(1-a)Zn_aBr₃(0＜a≦0.7)、CsPb_(1-a)Al_aBr_(3+δ)(0＜a≦0.7、0＜δ≦0.7)、CsPb_(1-a)Co_aBr₃(0＜a≦0.7)、CsPb_(1-a)Mn_aBr₃(0＜a≦0.7)、CsPb_(1-a)Mg_aBr₃(0＜a≦0.7)、CH₃NH₃Pb_(1-a)Zn_aBr_(3-y)I_y(0＜a≦0.7、0＜y＜3)、CH₃NH₃Pb_(1-a)Al_aBr_(3+δ-y)I_y(0＜a≦0.7,0＜δ≦0.7,0＜y＜3)、CH₃NH₃Pb_(1-a)Co_aBr_(3-y)I_y(0＜a≦0.7、0＜y＜3)、CH₃NH₃Pb_(1-a)Mn_aBr_(3-y)I_y(0＜a≦0.7,0＜y＜3)、CH₃NH₃Pb_(1-a)Mg_aBr_(3-y)I_y(0＜a≦0.7、0＜y＜3)、CH₃NH₃Pb_(1-a)Zn_aBr_(3-y)Cl_y(0＜a≦0.7、0＜y＜3)、CH₃NH₃Pb_(1-a)Al_aBr_(3+δ-y)Cl_y(0＜a≦0.7、0＜δ≦0.7、0＜y＜3)、CH₃NH₃Pb_(1-a)Co_aBr_(3+δ-y)Cl_y(0＜a≦0.7、0＜y＜3)、CH₃NH₃Pb_(1-a)Mn_aBr_(3-y)Cl_y(0＜a≦0.7、0＜y＜3)、CH₃NH₃Pb_(1-a)Mg_aBr_(3-y)Cl_y(0＜a≦0.7、0＜y＜3)、(H₂N＝CH-NH₂)Zn_aBr₃₎(0＜a≦0.7)、(H₂N＝CH-NH₂)Mg_aBr₃(0＜a≦0.7)、(H₂N＝CH-NH₂)Pb_(1-a)Zn_aBr_(3-y)I_y(0＜a≦0.7、0＜y＜3)、(H₂N＝CH-NH₂)Pb_(1-a)Zn_aBr_(3-y)Cl_y(0 < a ≦ 0.0 < y < 3), and the like.

As an aspect of the present invention, as the perovskite compound, ABX_(3+δ)The compound having a perovskite-type crystal structure of 3-dimensional structure is preferably CsPbBr₃、CsPbBr_(3-y)I_y(0＜y＜3)。

As the perovskite compound, A₂BX_(4+δ)Specific examples of the compound having a perovskite crystal structure having a 2-dimensional structure include:

(C₄H₉NH₃)₂PbBr₄、(C₄H₉NH₃)₂PbCl₄、(C₄H₉NH₃)₂PbI₄、(C₇H₁₅NH₃)₂PbBr₄、(C₇H₁₅NH₃)₂PbCl₄、(C₇H₁₅NH₃)₂PbI₄、(C₄H₉NH₃)₂Pb_(1-a)Li_aBr_(4+δ)(0＜a≦0.7、-0.7≦δ＜0)、(C₄H₉NH₃)₂Pb_(1-a)Na_aBr_(4+δ)(0＜a≦0.7、-0.7≦δ＜0)、(C₄H₉NH₃)₂Pb_(1-a)Rb_aBr_(4+δ)(0＜a≦0.7、-0.7≦δ＜0)、(C₇H₁₅NH₃)₂Pb_(1-a)Na_aBr_(4+δ)(0＜a≦0.7、-0.7≦δ＜0)、(C₇H₁₅NH₃)₂Pb_(1-a)Li_aBr_(4+δ)(0＜a≦0.7、-0.7≦δ＜0)、(C₇H₁₅NH₃)₂Pb_(1-a)Rb_aBr_(4+δ)(0＜a≦0.7、-0.7≦δ＜0)、(C₄H₉NH₃)₂Pb_(1-a)Na_aBr_(4+δ-y)I_y(0＜a≦0.7、-0.7≦δ＜0、0＜y＜4)、(C₄H₉NH₃)₂Pb_(1-a)Li_aBr_(4+δ-y)I_y(0＜a≦0.7、-0.7≦δ＜0、0＜y＜4)、(C₄H₉NH₃)₂Pb_(1-a)Rb_aBr_(4+δ-y)I_y(0＜a≦0.7、-0.7≦δ＜0、0＜y＜4)、(C₄H₉NH₃)₂Pb_(1-a)Na_aBr_(4+δ-y)Cl_y(0＜a≦0.7、-0.7≦δ＜0、0＜y＜4)、(C₄H₉NH₃)₂Pb_(1-a)Li_aBr_(4+δ-y)Cl_y(0＜a≦0.7、-0.7≦δ＜0、0＜y＜4)、(C₄H₉NH₃)₂Pb_(1-a)Rb_aBr_(4+δ-y)Cl_y(0＜a≦0.7、-0.7≦δ＜0、0＜y＜4)、(C₄H₉NH₃)₂PbBr₄、(C₇H₁₅NH₃)₂PbBr₄、(C₄H₉NH₃)₂PbBr_(4-y)Cl_y(0＜y＜4)、(C₄H₉NH₃)₂PbBr_(4-y)I_y(0＜y＜4)、(C₄H₉NH₃)₂Pb_(1-a)Zn_aBr₄(0＜a≦0.7)、(C₄H₉NH₃)₂Pb_(1-a)Mg_aBr₄(0＜a≦0.7)、(C₄H₉NH₃)₂Pb_(1-a)Co_aBr₄(0＜a≦0.7)、(C₄H₉NH₃)₂Pb_(1-a)Mn_aBr₄(0＜a≦0.7)、(C₇H₁₅NH₃)₂Pb_(1-a)Zn_aBr₄(0＜a≦0.7)、(C₇H₁₅NH₃)₂Pb_(1-a)Mg_aBr₄(0＜a≦0.7)、(C₇H₁₅NH₃)₂Pb_(1-a)Co_aBr₄(0＜a≦0.7)、(C₇H₁₅NH₃)₂Pb_(1-a)Mn_aBr₄(0＜a≦0.7)、(C₄H₉NH₃)₂Pb_(1-a)Zn_aBr_(4-y)I_y(0＜a≦0.7、0＜y＜4)、(C₄H₉NH₃)₂Pb_(1-a)Mg_aBr_(4-y)I_y(0＜a≦0.7、0＜y＜4)、(C₄H₉NH₃)₂Pb_(1-a)Co_aBr_(4-y)I_y(0＜a≦0.7、0＜y＜4)、(C₄H₉NH₃)₂Pb_(1-a)Mn_aBr_(4-y)I_y(0＜a≦0.7、0＜y＜4)、(C₄H₉NH₃)₂Pb_(1-a)Zn_aBr_(4-y)Cl_y(0＜a≦0.7、0＜y＜4)、(C₄H₉NH₃)₂Pb_(1-a)Mg_aBr_(4-y)Cl_y(0＜a≦0.7、0＜y＜4)、(C₄H₉NH₃)₂Pb_(1-a)Co_aBr_(4-y)Cl_y(0＜a≦0.7、0＜y＜4)、(C₄H₉NH₃)₂Pb_(1-a)Mn_aBr_(4-y)Cl_y(0 < a ≦ 0.7, 0 < y < 4), and the like.

(luminescence spectrum)

The perovskite compound is a light emitter capable of emitting fluorescence in the visible light wavelength range, and in the case where X is bromide ion, it is capable of emitting fluorescence having a maximum intensity peak in the wavelength range of usually 480nm or more, preferably 500nm or more, more preferably 520nm or more, and usually 700nm or less, preferably 600nm or less, more preferably 580nm or less.

The above upper limit value and lower limit value may be arbitrarily combined.

In another aspect of the present invention, when X in the perovskite compound is bromide ion, the peak of the emitted fluorescence is usually 480 to 700nm, preferably 500 to 600nm, and more preferably 520 to 580 nm.

When X is an iodide ion, it is possible to emit fluorescence having a maximum intensity peak in a wavelength range of usually 520nm or more, preferably 530nm or more, more preferably 540nm or more, and usually 800nm or less, preferably 750nm or less, more preferably 730nm or less.

The above upper limit value and lower limit value may be arbitrarily combined.

In another aspect of the present invention, when X in the perovskite compound is an iodide ion, the peak of the emitted fluorescence is usually 520 to 800nm, preferably 530 to 750nm, and more preferably 540 to 730 nm.

When X is a chloride ion, it is possible to emit fluorescence having a maximum intensity peak in a wavelength range of usually 300nm or more, preferably 310nm or more, more preferably 330nm or more, and usually 600nm or less, preferably 580nm or less, more preferably 550nm or less.

The above upper limit value and lower limit value may be arbitrarily combined.

In another aspect of the present invention, when X in the perovskite compound is a chloride ion, the peak of the emitted fluorescence is usually 300 to 600nm, preferably 310 to 580nm, and more preferably 330 to 550 nm.

The average particle size of (1) contained in the composition is not particularly limited, but is preferably 1nm or more, more preferably 2nm or more, and even more preferably 3nm or more from the viewpoint of maintaining the crystal structure well, and is preferably 10 μm or less, more preferably 1 μm or less, and even more preferably 500nm or less from the viewpoint of preventing the perovskite compound from being precipitated.

The above upper limit value and lower limit value may be arbitrarily combined.

The average particle size of (1) contained in the composition is not particularly limited, and is preferably 1nm to 10 μm, more preferably 2nm to 1 μm, and even more preferably 3nm to 500nm, from the viewpoint of difficulty in settling (1) and from the viewpoint of maintaining the crystal structure satisfactorily.

In the present specification, the average particle diameter of (1) contained in the composition can be measured by, for example, a transmission electron microscope (hereinafter, also referred to as TEM) or a scanning electron microscope (hereinafter, also referred to as SEM). Specifically, there is a method of observing the maximum feret diameters of 20 (1) contained in the above composition by TEM or SEM and averaging the maximum feret diameters of the respective (1). In the present specification, "maximum feret diameter" means the maximum distance between two parallel straight lines sandwiching (1) on a TEM or SEM image.

(2) Silazanes or modifications thereof

Silazanes are compounds having Si-N-Si bonds.

The silazane may be linear, branched or cyclic. Further, the silazane may be a low-molecular or high-molecular silazane (also referred to as polysilazane in the present specification).

In the present specification, "low molecular weight" means a number average molecular weight of less than 600, and "high molecular weight" means a number average molecular weight of 600 to 2000.

In the present specification, the "number average molecular weight" refers to a value in terms of polystyrene measured by Gel Permeation Chromatography (GPC).

For example, low-molecular silazanes represented by the following general formula (B1) or (B2) and polysilazanes having a structural unit represented by the general formula (B3) or a structural unit represented by the general formula (B4) are preferable.

The silazane contained in the composition of the present embodiment may be a modified silazane modified by the method described above.

The modification means that in at least a part of Si-N-Si bonds contained in the silazane, N is substituted with O to form Si-O-Si bonds, and the modified silazane is a compound containing Si-O-Si bonds.

As the modified form of the silazane, preferred are, for example, a low molecular weight compound in which at least one N is substituted with O contained in the above-mentioned general formula (B1) or (B2), a high molecular weight compound in which at least one N is substituted with O contained in the polysilazane having a structural unit represented by general formula (B3), or a high molecular weight compound in which at least one N is substituted with O contained in the polysilazane having a structural unit represented by general formula (B4).

The proportion of the number of substituted O relative to the total amount of N contained in the general formula (B2) is preferably 0.1 to 100%, more preferably 10 to 98%, and still more preferably 30 to 95%.

The proportion of the number of substituted O relative to the total amount of N contained in the general formula (B3) is preferably 0.1 to 100%, more preferably 10 to 98%, and still more preferably 30 to 95%.

The proportion of the number of substituted O relative to the total amount of N contained in the general formula (B4) is preferably 0.1 to 99%, more preferably 10 to 97%, and still more preferably 30 to 95%.

The modified silazane may be 1 or a mixture of 2 or more.

The number of Si atoms, the number of N atoms, and the number of O atoms contained in the silazane-modified product can be calculated by nuclear magnetic resonance spectroscopy (hereinafter, also referred to as NMR), X-ray photoelectron spectroscopy (hereinafter, also referred to as XPS), energy dispersive X-ray analysis using TEM (hereinafter, also referred to as EDX), or the like.

Particularly preferred methods are those in which the number of Si atoms, the number of N atoms, and the number of 0 atoms in the composition are measured by XPS.

The ratio of the number of O atoms to the number of N atoms contained in the silazane and its modified product measured by the above method is preferably 0.1 to 99%, more preferably 10 to 95%, and still more preferably 30 to 90%.

The silazane and its modified form may be, at least in part, adsorbed to (1) contained in the composition, or may be dispersed in the composition.

[ solution 2]

In the general formula (B1), R¹⁴And R¹⁵Each independently represents a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an alkenyl group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms or an alkylsilyl group having 1 to 20 carbon atoms. The alkyl group having 1 to 20 carbon atoms, the alkenyl group having 1 to 20 carbon atoms, the cycloalkyl group having 3 to 20 carbon atoms, the aryl group having 6 to 20 carbon atoms or the alkylsilyl group having 1 to 20 carbon atoms may have a substituent such as an amino group. Plural R¹⁵May be the same or different.

Examples of the low-molecular silazane represented by the general formula (B1) include 1, 3-divinyl-1, 1,3, 3-tetramethyldisilazane, 1, 3-diphenyltetramethyldisilazane, and 1,1,1,3,3, 3-hexamethyldisilazane.

[ solution 3]

In the general formula (B2), R¹⁴And R¹⁵As described above.

Plural R¹⁴May be the same or different.

Plural R¹⁵May be the same or different.

n₁Represents an integer of 1 to 20 inclusive. n is₁May be an integer of 1 to 10 inclusive, or 1 or 2.

Examples of the low-molecular silazane represented by the general formula (B2) include octamethylcyclotetrasilazane, 2,4,4,6, 6-hexamethylcyclotrisilazane, and 2,4, 6-trimethyl-2, 4, 6-trivinyltrisilazane.

As the low-molecular silazane, octamethylcyclotetrasilazane and 1, 3-diphenyltetramethyldisilazane are preferable, and octamethylcyclotetrasilazane is more preferable.

The polysilazane is a polymer compound having an Si — N — Si bond, and is not particularly limited, and examples thereof include a polymer compound having a structural unit represented by the following general formula (B3). The number of the structural units represented by the general formula (B3) contained in the polysilazane may be 1 or more.

[ solution 4]

In the general formula (B3), R¹⁴And R¹⁵As described above.

Denotes a bonding site. The bonding site of the terminal N atom may have a bond with R¹⁴The same substituent as the above, the bonding site of the terminal Si atom may have R¹⁵The same substituents.

Plural R¹⁴May be the same or different.

Plural R¹⁵May be the same or different.

m is an integer of 2 to 10000 inclusive.

The polysilazane having a structural unit represented by the general formula (B3) may be, for example, R¹⁴And R¹⁵Perhydropolysilazanes which are all hydrogen atoms.

Furthermore, the polysilazane having a structural unit represented by the general formula (B3) may have, for example, at least 1R¹⁵An organic polysilazane which is a group other than a hydrogen atom. Depending on the application, suitable perhydropolysilazanes and organic polysilazanes may be selected and used in combination.

A part of the polysilazane molecule may have a ring structure, and for example, may have a structure represented by the general formula (B4).

[ solution 5]

In the general formula (B4), a represents a bonding site.

The bonding site may be bonded to the bonding site of the structural unit represented by the general formula (B3). When the polysilazane molecule contains a plurality of structures represented by the general formula (B4), the bonding site of the structure represented by the general formula (B4) may be bonded to the bonding site of another structure represented by the general formula (B4).

The bonding site of the N atom which is not bonded to the bonding site of the structural unit represented by the general formula (B3) or the bonding site of the structure represented by the other general formula (B4) may have a structure which bonds to R¹⁴The same substituent, the bonding point of the Si atom which is not bonded to the bonding point of the structural unit represented by the general formula (B3) or the bonding point of the other structure represented by the general formula (B4) may have a bonding point to R¹⁵The same substituents.

n₂Represents an integer of 1 to 10000 inclusive. n is₂May be an integer of 1 to 10 inclusive, or 1 or 2.

(2) The organic polysilazane is not particularly limited, but is preferably an organic polysilazane or a modified product thereof from the viewpoint of improving dispersibility and suppressing aggregation. The organopolysilazane may, for example, be a compound of the formula (B3) R¹⁴And R¹⁵At least one of the above groups is an alkyl group having 1 to 20 carbon atoms, an alkenyl group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms or an alkylsilyl group having 1 to 20 carbon atoms, and may be an organopolysilazane having a structural unit represented by the general formula (B3), or a organopolysilazane having at least 1 bonding site in the general formula (B4) and R¹⁴Or R¹⁵Bonding of the aforementioned R¹⁴And R¹⁵At least one of the above groups is an alkyl group having 1 to 20 carbon atoms, an alkenyl group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms or an alkylsilyl group having 1 to 20 carbon atoms, and is an organopolysilazane having a structure represented by the general formula (B4).

The organic polysilazane is more preferably a polysilazane having R in the general formula (B3)¹⁴And R¹⁵An organopolysilazane of a structural unit represented by the general formula (B3) wherein at least one of the groups is a methyl group, or an organopolysilazane having at least 1 bonding site in the general formula (B4) and R¹⁴Or R¹⁵Bonding of the aforementioned R¹⁴And R¹⁵At least one of the groups (A) and (B) is a methyl group, and is an organopolysilazane having a structure represented by the general formula (B4).

Typical polysilazanes have, for example, a structure of a straight chain structure and a ring structure such as a six-membered ring or an eight-membered ring. As described above, the molecular weight is a liquid or solid substance having a number average molecular weight (Mn) of 600 to 2000 (in terms of polystyrene) depending on the molecular weight. As the polysilazane, commercially available products such as NN120-10, NN120-20, NAX120-20, NN110, NAX120, NAX110, NL120A, NL110A, NL150A, NP110, NP140 (manufactured by AZ electronic materials Co., Ltd.), AZNN-120-20, Durazane (registered trademark) 1500Slow Cure, Durazane (registered trademark) 1500Rapid Cure, Durazane (registered trademark) 1800 (manufactured by Merck advanced technology materials Co., Ltd.), and Durazane (registered trademark) 1033 (manufactured by Merck advanced technology materials Co., Ltd.) can be used.

The polysilazane having a structural unit represented by the general formula (B3) is more preferably AZNN-120-20, Durazane (registered trademark) 1500Slow cut, Durazane (registered trademark) 1500Rapid cut, and Durazane (registered trademark) 1500Slow cut.

(3) Solvent(s)

The solvent is not particularly limited as long as it is a medium capable of dispersing (1), and is preferably one which does not readily dissolve (1).

In the present specification, the term "solvent" means a substance that is in a liquid state at 25 ℃ under 1 atmosphere (excluding polymerizable compounds and polymers).

In the present specification, "dispersion" means (1) a state of floating or suspending in a solvent, a polymerizable compound, a polymer, or the like, and a part of them may be allowed to settle.

Examples of the solvent include esters such as methyl formate, ethyl formate, propyl formate, pentyl formate, methyl acetate, ethyl acetate, and pentyl acetate; ketones such as γ -butyrolactone, N-methyl-2-pyrrolidone, acetone, dimethyl ketone, diisobutyl ketone, cyclopentanone, cyclohexanone, and methylcyclohexanone; ethers such as diethyl ether, methyl tert-butyl ether, diisopropyl ether, dimethoxymethane, dimethoxyethane, 1, 4-dioxane, 1, 3-dioxolane, 4-methyldioxolane, tetrahydrofuran, methyltetrahydrofuran, anisole, and phenetole; alcohols such as methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, 2-butanol, t-butanol, 1-pentanol, 2-methyl-2-butanol, methoxypropanol, diacetone alcohol, cyclohexanol, 2-fluoroethanol, 2,2, 2-trifluoroethanol, and 2,2,3, 3-tetrafluoro-1-propanol; glycol ethers such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol monoethyl ether acetate, and triethylene glycol dimethyl ether; amide group-containing organic solvents such as N, N-dimethylformamide, acetamide, and N, N-dimethylacetamide; organic solvents having a nitrile group such as acetonitrile, isobutyronitrile, propionitrile, and methoxyacetonitrile; organic solvents having a carbonate group such as ethylene carbonate and propylene carbonate; organic solvents having halogenated hydrocarbon groups such as methylene chloride and chloroform; organic solvents having hydrocarbon groups such as n-pentane, cyclohexane, n-hexane, benzene, toluene, and xylene; dimethylsulfoxide, and the like.

Among them, methyl formate, ethyl formate, propyl formate, pentyl formate, methyl acetate, ethyl acetate, pentyl acetate and other esters; ketones such as γ -butyrolactone, N-methyl-2-pyrrolidone, acetone, dimethyl ketone, diisobutyl ketone, cyclopentanone, cyclohexanone, and methylcyclohexanone; ethers such as diethyl ether, methyl tert-butyl ether, diisopropyl ether, dimethoxymethane, dimethoxyethane, 1, 4-dioxane, 1, 3-dioxolane, 4-methyldioxolane, tetrahydrofuran, methyltetrahydrofuran, anisole, and phenetole; organic solvents having a nitrile group such as acetonitrile, isobutyronitrile, propionitrile, and methoxyacetonitrile; organic solvents having a carbonate group such as ethylene carbonate and propylene carbonate; organic solvents having halogenated hydrocarbon groups such as methylene chloride and chloroform; organic solvents having a hydrocarbon group such as n-pentane, cyclohexane, n-hexane, benzene, toluene, xylene, etc., preferably organic solvents having a halogenated hydrocarbon group such as methylene chloride, chloroform, etc., in view of low polarity and difficulty in dissolving (1)'; an organic solvent having a hydrocarbon group such as n-pentane, cyclohexane, n-hexane, benzene, toluene, or xylene.

(4) Polymerizable compound or polymer

The polymerizable compound is not particularly limited, and may be 1 kind or 2 or more kinds. The polymerizable compound is preferably a polymerizable compound (1) having low solubility at the temperature for producing the composition of the present embodiment.

In addition, from the viewpoint of easily forming a sea-island phase separation structure described later, the polymerizable compound is more preferably a hydrophobic polymerizable compound or a polymer.

In the present specification, the "polymerizable compound" refers to a compound of a monomer having a polymerizable group.

When the polymer is produced at room temperature and normal pressure, the polymerizable compound is not particularly limited, and examples thereof include known polymerizable compounds such as styrene, acrylic acid esters, methyl methacrylate, and acrylonitrile.

Among these, acrylic esters and/or methacrylic esters, which are monomer components of the acrylic resin, are more preferable as the polymerizable compound from the viewpoint of solubility and the viewpoint of easily forming a sea-island phase separation structure.

The polymer contained in the composition of the present embodiment is not particularly limited, and may be 1 kind or 2 or more kinds. The polymer is preferably a polymer having a low solubility of (1) at the temperature for producing the composition of the present embodiment.

When the polymer is produced at room temperature and normal pressure, the polymer is not particularly limited, and examples thereof include known polymers such as polystyrene, acrylic resins, and epoxy resins. Among them, acrylic resins are more preferable from the viewpoint of solubility and the viewpoint of easily forming a sea-island phase separation structure. The acrylic resin contains a structural unit derived from an acrylate and/or a methacrylate.

In the composition of the present embodiment, the acrylate and/or methacrylate and the structural unit derived therefrom may be 10% or more, 30% or more, 50% or more, 80% or more, or 100% in terms of mol% of the total structural units contained in (4).

The weight average molecular weight of the polymer is preferably 100 to 1200000, more preferably 1000 to 800000, and further preferably 5000 to 150000.

In the present specification, "weight average molecular weight" refers to a polystyrene equivalent value measured by Gel Permeation Chromatography (GPC).

(5) At least 1 compound or ion selected from the group consisting of ammonia, amines and carboxylic acids and their salts or ions

The mixture of the present embodiment may contain at least 1 compound or ion selected from salts and ions thereof as ammonia, amine, carboxylic acid, and a compound available on the market.

That is, the composition of the present embodiment may contain at least one compound or ion selected from ammonia, an amine, a carboxylic acid, a salt of ammonia, a salt of an amine, a salt of a carboxylic acid, an ion of ammonia, an ion of an amine, and an ion of a carboxylic acid.

Ammonia, amines and carboxylic acids, and their salts or ions, generally function as capped ligands. The capped ligand is a compound having the function of adsorbing to the surface of (1) and stably dispersing (1) in the composition. Examples of the ions or salts (ammonium salts and the like) of ammonia or amine include ammonium cations represented by the general formula (a1) described later and ammonium salts containing the ammonium cations. Examples of the ion or salt (such as carboxylate salt) of the carboxylic acid include a carboxylate anion represented by the general formula (a2) described later and a carboxylate salt containing the carboxylate anion. The composition of the present embodiment may contain either or both of ammonium salts and carboxylic acid salts.

(5) May be an ammonium cation represented by the general formula (A3) or an ammonium salt containing the same.

[ solution 6]

In the general formula (A3), R¹～R³Represents a hydrogen atom, R⁴Represents a hydrogen atom or a 1-valent hydrocarbon group. R⁴The hydrocarbyl groups represented may be saturated hydrocarbyl groups (i.e., alkyl or cycloalkyl) or unsaturated hydrocarbyl groups.

R⁴The alkyl group may be linear or branched.

R⁴The number of carbon atoms of the alkyl group is usually 1 to 20, preferably 5 to 20, and more preferably 8 to 20.

R⁴The cycloalkyl group may have an alkyl group as a substituentAnd (4) generation of base. The number of carbon atoms of the cycloalkyl group is usually 3 to 30, preferably 3 to 20, and more preferably 3 to 11. The number of carbon atoms includes the number of carbon atoms of the substituent.

R⁴The unsaturated hydrocarbon group represented by (a) may be linear or branched.

R⁴The unsaturated hydrocarbon group has usually 2 to 20 carbon atoms, preferably 5 to 20 carbon atoms, and more preferably 8 to 20 carbon atoms.

R⁴Preferably a hydrogen atom, an alkyl group or an unsaturated hydrocarbon group. The unsaturated hydrocarbon group is preferably an alkenyl group. R⁴Preferably an alkenyl group having 8 to 20 carbon atoms.

As R⁴Specific examples of the alkyl group include R⁶～R⁹Exemplary alkyl groups.

As R⁴Specific examples of the cycloalkyl group include R⁶～R⁹Exemplary cycloalkyl groups.

As R⁴The alkenyl group is exemplified by R⁶～R⁹In the above-mentioned linear or branched alkyl group, the single bond (C — C) between any carbon atoms is substituted with a double bond (C ═ C), and the position of the double bond is not particularly limited.

Preferred examples of such alkenyl groups include ethenyl, propenyl, 3-butenyl, 2-pentenyl, 2-hexenyl, 2-nonenyl, 2-dodecenyl and 9-octadecenyl.

In the case where the ammonium cation forms a salt, the counter anion is not particularly limited, and may be Br^-、Cl^-、I^-、F^-The halide ion and the carboxylate ion of (2) are preferable examples.

As the ammonium salt having the ammonium cation represented by the general formula (a3) and the counter anion, n-octyl ammonium salt and oleyl ammonium salt are exemplified as preferable examples.

(5) May be a carboxylate anion represented by the general formula (a4) or a carboxylate salt comprising the same.

R⁵-CO₂ ^-…(A4)

In the general formula (A4), R⁵Represents a 1-valent hydrocarbon group. R⁵The 1-valent hydrocarbon group represented may be a saturated hydrocarbon group (i.e., an alkyl group or a cycloalkyl group), or an unsaturated hydrocarbon group.

R⁵The alkyl group may be linear or branched.

R⁵The number of carbon atoms of the alkyl group is usually 1 to 20, preferably 5 to 20, and more preferably 8 to 20.

R⁵The cycloalkyl group represented may have an alkyl group as a substituent. The number of carbon atoms of the cycloalkyl group is usually 3 to 30, preferably 3 to 20, and more preferably 3 to 11. The number of carbon atoms includes the number of carbon atoms of the substituent.

R⁵The unsaturated hydrocarbon group represented by (a) may be linear or branched.

R⁵The unsaturated hydrocarbon group has usually 2 to 20 carbon atoms, preferably 5 to 20 carbon atoms, and more preferably 8 to 20 carbon atoms.

R⁵Preferably an alkyl group or an unsaturated hydrocarbon group. The unsaturated hydrocarbon group is preferably an alkenyl group.

As R⁵Specific examples of the alkyl group include R⁶～R⁹Exemplary alkyl groups.

As R⁵Specific examples of the cycloalkyl group include R⁶～R⁹Exemplary cycloalkyl groups.

As R⁵Specific examples of the alkenyl group include R⁴Exemplary alkenyl groups.

The carboxylate anion represented by the general formula (A4) is preferably an oleate anion.

In the case where the carboxylate anion forms a salt, the counter cation is not particularly limited, and preferable examples thereof include an alkali metal cation, an alkaline earth metal cation, and an ammonium cation.

Method for producing composition

The method for producing the composition of the present embodiment includes: a step of mixing (1), (2) and (4) in the presence of (3), wherein (1) not including the addition is coated with (2).

In the method for producing the composition of the present embodiment, the step of mixing and reacting (1) and (2) in advance and the step of drying the obtained reaction product to obtain (2) -coated (1) are not required, and the composition having durability against water vapor can be produced.

A method for producing the composition of the present embodiment comprising the step of mixing (1), (2) and (4) in the presence of (3),

can be (a): a method for producing a composition comprising a step of dispersing (1) in (3) to obtain a dispersion liquid and a step of mixing the dispersion liquid, (2) and (4);

may be (b): a method for producing a composition comprising the step of dispersing (2) in (3) to obtain a dispersion and the step of mixing the dispersion (1) and (4),

the method for producing the composition of the present embodiment is preferably the production method (a) from the viewpoint of improving the dispersibility of (1).

The production method (a) may be (a 1): a method for producing a composition comprising a step of dispersing (1) in (3) to obtain a dispersion liquid, a step of mixing the dispersion liquid with (4) to obtain a mixed liquid, and a step of mixing the mixed liquid with (2);

may also be (a 2): a method for producing a composition comprising the steps of dispersing (1) in (3) to obtain a dispersion, mixing the dispersion with (2) to obtain a mixed solution, and mixing the mixed solution with (4).

The production method (b) may be (b 1): a method for producing a composition comprising a step of dispersing (2) in (3) to obtain a dispersion liquid, a step of mixing the dispersion liquid with (4) to obtain a mixed liquid, and a step of mixing the mixed liquid with (1);

may also be (b 2): a method for producing a composition comprising the steps of dispersing (2) in (3) to obtain a dispersion, mixing the dispersion with (1) to obtain a mixed solution, and mixing the mixed solution with (4).

In the above-mentioned production method, stirring is preferably performed in each step from the viewpoint of improving the dispersibility of (1) or (2).

The temperature in each step included in the above-mentioned production method is not particularly limited, and is preferably in the range of 0 to 100 ℃ and more preferably in the range of 10 to 80 ℃ from the viewpoint of uniform mixing.

In any step included in the above production method, (5) may be added.

Further, the step (5) may be mixed in any step included in the method for producing semiconductor fine particles described later.

In the method for producing the composition of the present embodiment, when silazane is used as (2), the method for producing the composition of the present embodiment may include: and a step of modifying the mixed solution containing silazane.

The time point for performing the modification treatment is not particularly limited, and the production method (a) includes, for example: a step of dispersing (1) in (3) to obtain a dispersion liquid, a step of mixing the dispersion liquid with (2') to obtain a mixed liquid, a step of subjecting the mixed liquid to a modification treatment to obtain a mixed liquid containing a modified silane, and a step of mixing the mixed liquid containing a modified silane with (4).

(2') silazane

(2') the same as the explanation of the silazane contained in (2) above.

The method for carrying out the modification treatment is not particularly limited as long as it is a method in which, in at least a part of Si-N-Si bonds contained in silazane, N is substituted with O to form Si-O-Si bonds. Examples of the method for carrying out the modification treatment include a known method such as a method of irradiating ultraviolet light and a method of reacting silazane with water vapor.

Among these, the modification treatment is preferably performed by reacting silazane with water vapor (hereinafter, also referred to as wet treatment), from the viewpoint of forming a stronger protective region in the vicinity of (1).

The wavelength of the ultraviolet light used in the method of irradiating ultraviolet light is usually 10 to 400nm, preferably 10 to 350nm, and more preferably 100 to 180 nm. Examples of the light source generating ultraviolet light include a metal halide lamp, a high-pressure mercury lamp, a low-pressure mercury lamp, a xenon arc lamp, a carbon arc lamp, an excimer lamp, and a UV laser beam.

In the case of performing the humidification treatment, the composition may be allowed to stand or stirred for a certain period of time under the temperature and humidity conditions described later.

Stirring is preferably performed from the viewpoint of improving the dispersibility of the silazane contained in the composition.

The temperature of the humidification treatment may be a temperature at which the modification is sufficiently performed, and is, for example, preferably 5 to 150 ℃, more preferably 10 to 100 ℃, and further preferably 15 to 80 ℃.

The humidity of the humidification treatment may be any humidity as long as it can supply sufficient water to the silazane-containing compound in the composition, and is, for example, 30% to 100%, more preferably 40% to 95%, and still more preferably 60% to 90%.

In the present specification, "humidity" refers to the relative humidity at the temperature at which the humidification process is performed.

The time required for the humidification treatment may be a time sufficient for the modification, and is, for example, 10 minutes to 1 week, more preferably 1 hour to 5 days, and still more preferably 12 hours to 3 days.

Blending ratio of each component

In the method for producing the composition of the present embodiment, the blending ratio of (1) is not particularly limited, but is preferably 50% by mass or less, more preferably 1% by mass or less, and further preferably 0.1% by mass or less from the viewpoint of (1) being less likely to coagulate and preventing concentration quenching, and is preferably 0.0001% by mass or more, more preferably 0.0005% by mass or more, and further preferably 0.001% by mass or more from the viewpoint of obtaining a good quantum yield.

The above upper limit value and lower limit value may be arbitrarily combined.

The blending ratio of (1) is usually 0.0001 to 50% by mass based on the total mass of the composition.

The blending ratio of (1) is preferably 0.0001 to 1% by mass, more preferably 0.0005 to 1% by mass, and still more preferably 0.001 to 0.5% by mass, based on the total mass of the composition.

The composition having the blending ratio of (1) in the above range with respect to the total mass of the composition is preferable in that the aggregation of (1) is less likely to occur and a good luminescence property is exhibited.

In the method for producing the composition of the present embodiment, the blending ratio of (2) is not particularly limited, but is preferably 30% by mass or less, more preferably 15% by mass or less, and further preferably 7% by mass or less from the viewpoint of improving the dispersibility of (2) contained in the composition, and is preferably 0.001% by mass or more, more preferably 0.01% by mass or more, and further preferably 0.1% by mass or more from the viewpoint of improving the effect on the durability against water vapor by (2).

The above upper limit value and lower limit value may be arbitrarily combined.

The blending ratio of (2) is usually 0.001 to 30% by mass based on the total mass of the composition.

The blending ratio of (2) is preferably 0.01 to 15% by mass, more preferably 0.1 to 10% by mass, and still more preferably 0.2 to 7% by mass, based on the total mass of the composition.

The composition having the blending ratio of (2) in the above range with respect to the total mass of the composition is preferable in that the dispersibility of (2) contained in the composition is improved, and the effect of improving the durability against water vapor by (2) is particularly favorably exerted.

In the method for producing the composition of the present embodiment, the blending ratio of (1) to the total of (3) and (4) is not particularly limited, and may be appropriately determined depending on the types of (1) to (4) as long as the light-emitting effect by (1) is exhibited well.

(1) The mass ratio [ (1)/((total of (3) and (4)) to the total of (3) and (4)) is usually 0.00001 to 10, preferably 0.0001 to 2, and more preferably 0.0005 to 1.

(1) The composition having the mixing ratio with the total of (3) and (4) within the above range is preferable in that the aggregation of (1) is less likely to occur and the luminescence is favorably exhibited.

When (5) is used in the method for producing the composition of the present embodiment, the blending ratio of (1) to (5) is not particularly limited, and may be appropriately determined depending on the types of (1) to (5) as long as the light-emitting effect by (1) is exhibited satisfactorily.

In the method for producing the composition of the embodiment including (1), (2), (3), (4) and (5), the molar ratio [ (1)/(5) ] of (1) to (5) may be 0.0001 to 1000, or 0.01 to 100.

(1) The composition having the blending ratio of (1) to (5) within the above range is preferable in that the composition is less likely to cause aggregation of (1) and exhibits a good luminescence property.

In the method for producing the composition of the present embodiment, the blending ratio of the total of (1) and (2) is not particularly limited, but is preferably 60% by mass or less, more preferably 40% by mass or less, further preferably 30% by mass or less, and particularly preferably 20% by mass or less, from the viewpoint of (1) being less likely to coagulate and from the viewpoint of preventing concentration quenching, and is preferably 0.0002% by mass or more, more preferably 0.002% by mass or more, and further preferably 0.005% by mass or more, from the viewpoint of obtaining a good quantum yield.

The above upper limit value and lower limit value may be arbitrarily combined.

The total amount of (1) and (2) is usually 0.0002 to 60% by mass based on the total mass of the composition.

The total blending ratio of (1) and (2) is preferably 0.001 to 40% by mass, more preferably 0.002 to 30% by mass, and still more preferably 0.005 to 20% by mass, based on the total mass of the composition.

The composition having the blending ratio of the total of (1) and (2) in the above range based on the total mass of the composition is preferable in that the aggregation of (1) is less likely to occur and the light-emitting property is exhibited well.

In the method for producing the composition of the present embodiment, the blending ratio of (1) and (2) may be appropriately determined depending on the kind of (1) and (2) as long as the effect of (2) on improving the durability against water vapor is exerted.

In the method for producing the composition of the present embodiment, when the compound containing an indium element described later is used as (1), the molar ratio [ Si/In ] of the In element of the compound containing an indium element to the Si element of (2) may be 0.001 to 2000, or 0.01 to 500.

In the method for producing the composition of the present embodiment, when (2) is a silazane represented by the general formula (B1) or (B2) or a modified form thereof, the molar ratio [ Si/In ] of the In element of the indium element-containing compound of (1) to the Si element of (2) may be 1 to 1000, 10 to 500, or 20 to 300.

In the method for producing the composition of the present embodiment, when (2) is a polysilazane having a structural unit represented by the general formula (B3), the molar ratio [ Si/In ] of the In element of the indium element-containing compound of (1) to the Si element of (2) may be 0.001 to 2000, or 0.01 to 2000, or 0.1 to 1000, or 1 to 500, or 2 to 300.

In the method for producing the composition of the present embodiment, when a perovskite compound containing A, B and X as components (1) described later is used, the molar ratio [ Si/B ] of the metal ion of the B component of the perovskite compound to the Si element of (2) may be 0.001 to 2000, or 0.01 to 500.

In the method for producing the composition of the present embodiment, when (2) is a silazane represented by the general formula (B1) or (B2) or a modified form thereof, the molar ratio [ Si/B ] of the metal ion of the B component of the perovskite compound of (1) to the Si element of (2) may be 1 to 1000, 10 to 500, or 20 to 300.

In the method for producing the composition of the present embodiment, when (2) is a polysilazane having a structural unit represented by the general formula (B3), the molar ratio [ Si/B ] of the metal ion of the B component of the perovskite compound of (1) to the Si element of (2) may be 0.001 to 2000, or 0.01 to 2000, or 0.1 to 1000, or 1 to 500, or 2 to 300.

(1) The composition having the blending ratio of (2) within the above range is particularly preferable in that the effect of (2) on improving the durability against water vapor is exerted particularly well.

(1) Method for producing semiconductor particles

The following describes the production method of (1).

The following description will discuss (1-1) semiconductor particles containing a group II-V compound, semiconductor particles containing a group II-VI compound, semiconductor particles containing a group III-IV compound, semiconductor particles containing a group III-V compound, semiconductor particles containing a group III-VI compound, semiconductor particles containing a group IV-VI compound, semiconductor particles containing a group I-III-VI compound, and (1-2) methods for producing semiconductor particles containing a perovskite compound. (1) The method of (4) is not limited to the following methods.

(1-1) semiconductor fine particles comprising a group II-V compound, semiconductor fine particles comprising a group II-VI compound, semiconductor fine particles comprising a group III-IV compound, semiconductor fine particles comprising a group III-V compound, semiconductor fine particles comprising a group III-VI compound, semiconductor fine particles comprising a group IV-VI compound, and method for producing semiconductor fine particles comprising a group I-III-VI compound

Semiconductor fine particles comprising a group II-V compound, semiconductor fine particles comprising a group II-VI compound, semiconductor fine particles comprising a group III-IV compound, semiconductor fine particles comprising a group III-V compound, semiconductor fine particles comprising a group III-VI compound, semiconductor fine particles comprising a group IV-VI compound, and semiconductor fine particles comprising a group I-III-VI compound can be produced by commercially available methods or by known production methods. A known production method includes a method of heating a mixed solution in which a monomer or a compound thereof as an element constituting the semiconductor fine particles is mixed with a fat-soluble solvent.

Examples of the monomer or compound of the element constituting the semiconductor fine particles include, but are not particularly limited to, metals, oxides, acetates, organometallic compounds, halides, nitrates, and the like.

Examples of the fat-soluble solvent include a nitrogen-containing compound having a hydrocarbon group having 4 to 20 carbon atoms, an oxygen-containing compound having a hydrocarbon group having 4 to 20 carbon atoms, and the like. Examples of the hydrocarbon group having 4 to 20 carbon atoms include saturated aliphatic hydrocarbon groups such as n-butyl, isobutyl, n-pentyl, octyl, decyl, dodecyl, hexadecyl, and octadecyl; unsaturated aliphatic hydrocarbon groups such as oleyl group; alicyclic hydrocarbon groups such as cyclopentyl and cyclohexyl; and aromatic hydrocarbon groups such as phenyl, benzyl, naphthyl, and naphthylmethyl, with saturated aliphatic hydrocarbon groups and unsaturated aliphatic hydrocarbon groups being preferred. Examples of the nitrogen-containing compound include amines and amides, and examples of the oxygen-containing compound include fatty acids. Among such fat-soluble solvents, nitrogen-containing compounds having a hydrocarbon group having 4 to 20 carbon atoms are more preferable, and for example, alkylamines such as n-butylamine, isobutylamine, n-pentylamine, n-hexylamine, octylamine, decylamine, dodecylamine, hexadecylamine, and octadecylamine, and alkenylamines such as oleylamine are more preferable. These fat-soluble solvents can be bonded to the surface of the semiconductor fine particles, and examples of the form of the bond include chemical bonds such as covalent bond, ionic bond, coordinate bond, hydrogen bond, and van der waals bond.

The heating temperature of the mixed solution may be appropriately set depending on the kind of the monomer and the compound to be used, and is preferably set in the range of 130 to 300 ℃ and more preferably 240 to 300 ℃. When the heating temperature is not lower than the lower limit, the crystal structure is easily simplified, which is preferable. The heating time may be appropriately set depending on the kind of the monomer or compound to be used and the heating temperature, and is usually preferably set in the range of several seconds to several hours, more preferably in the range of 1 to 60 minutes.

In the method for producing semiconductor fine particles of the present invention, the heated mixed solution is cooled, and then separated into a clear solution and a precipitate, and the semiconductor fine particles (precipitate) separated are put into an organic solvent (for example, chloroform, toluene, hexane, n-butanol, etc.) to be a solution containing semiconductor fine particles. Alternatively, the heated mixed solution is cooled, separated into a clear solution and a precipitate, a solvent (for example, methanol, ethanol, acetone, acetonitrile, or the like) in which the nanoparticles are insoluble or poorly soluble is added to the separated clear solution to generate a precipitate, and the precipitate is collected and put in the organic solvent to obtain a solution containing the semiconductor particles.

(1-2) Process for producing semiconductor Fine particles comprising perovskite Compound

The perovskite compound can be produced by the method of embodiment 1 or embodiment 2 described below with reference to known documents (Nano Lett.2015, 15, 3692-.

(embodiment 1 of the Process for producing a perovskite Compound)

For example, the method for producing a perovskite compound according to the present invention includes: a step of dissolving the component B, the component X and the component A in a solvent X to obtain a solution g; and a step of mixing the obtained solution g with a solvent y having a lower solvent solubility for the perovskite compound than the solvent x used in the step of obtaining the solution g.

More specifically, the method comprises the following steps: a step of dissolving a compound containing the component B and the component X and a compound containing the component A or the component A and the component X in a solvent X to obtain a solution g; and a step of mixing the obtained solution g with a solvent y having a lower solvent solubility for the perovskite compound than the solvent x used in the step of obtaining the solution g.

The perovskite compound is precipitated by mixing the solution g with a solvent y having a lower solvent solubility for the perovskite compound than the solvent x used in the step of obtaining the solution g.

The following, the description includes: a step of dissolving a compound containing the component B and the component X and a compound containing the component A or the component A and the component X in a solvent X to obtain a solution g; and a step of mixing the obtained solution g with a solvent y having a lower solvent solubility for the perovskite compound than the solvent x used in the step of obtaining the solution g.

In addition, solubility refers to the solubility at the temperature at which the mixing step is performed.

The foregoing production method preferably includes a step of adding a capping ligand from the viewpoint that the perovskite compound can be stably dispersed. The capping ligand is preferably added before the mixing step, or the capping ligand may be added to a solution g in which the components a, B and X are dissolved, to a solvent y having a lower solvent solubility for the perovskite compound than the solvent X used in the step of obtaining the solution g, or to both the solvent X and the solvent y.

The production method preferably includes a step of removing coarse particles by means of centrifugation, filtration, or the like after the mixing step. The size of the coarse particles removed by the removal step is preferably 10 μm or more, more preferably 1 μm or more, and further preferably 500nm or more.

The step of mixing the solution g with the solvent y may be (I) a step of dropping the solution g into the solvent y; or (II) a step of dropping the solvent y into the solution g; from the viewpoint of improving the dispersibility of (1), (I) is more preferable.

From the viewpoint of improving the dispersibility of (1), stirring is preferably performed at the time of dropping.

In the step of mixing the solution g with the solvent y, the temperature is not particularly limited, but is preferably in the range of-20 to 40 ℃ and more preferably in the range of-5 to 30 ℃ from the viewpoint of ensuring the ease of precipitation of the perovskite compound of (1).

The 2 types of solvents x and y having different solubilities to the solvent of the perovskite compound used in the above production method are not particularly limited, and examples thereof include esters selected from methyl formate, ethyl formate, propyl formate, pentyl formate, methyl acetate, ethyl acetate, pentyl acetate and the like; ketones such as γ -butyrolactone, N-methyl-2-pyrrolidone, acetone, dimethyl ketone, diisobutyl ketone, cyclopentanone, cyclohexanone, and methylcyclohexanone; ethers such as diethyl ether, methyl tert-butyl ether, diisopropyl ether, dimethoxymethane, dimethoxyethane, 1, 4-dioxane, 1, 3-dioxolane, 4-methyldioxolane, tetrahydrofuran, methyltetrahydrofuran, anisole, and phenetole; alcohols such as methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, 2-butanol, t-butanol, 1-pentanol, 2-methyl-2-butanol, methoxypropanol, diacetone alcohol, cyclohexanol, 2-fluoroethanol, 2,2, 2-trifluoroethanol, and 2,2,3, 3-tetrafluoro-1-propanol; glycol ethers such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol monoethyl ether acetate, and triethylene glycol dimethyl ether; amide group-containing organic solvents such as N, N-dimethylformamide, acetamide, and N, N-dimethylacetamide; organic solvents having a nitrile group such as acetonitrile, isobutyronitrile, propionitrile, and methoxyacetonitrile; organic solvents having a carbonate group such as ethylene carbonate and propylene carbonate; organic solvents having halogenated hydrocarbon groups such as methylene chloride and chloroform; organic solvents having hydrocarbon groups such as n-pentane, cyclohexane, n-hexane, benzene, toluene, and xylene; 2 solvents selected from the group consisting of dimethyl sulfoxide.

The solvent x used in the step of obtaining the solution g included in the production method is preferably a solvent having high solubility in the solvent of the perovskite compound, and examples thereof include alcohols such as methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, 2-butanol, t-butanol, 1-pentanol, 2-methyl-2-butanol, methoxypropanol, diacetone alcohol, cyclohexanol, 2-fluoroethanol, 2,2, 2-trifluoroethanol, and 2,2,3, 3-tetrafluoro-1-propanol when the step is performed at room temperature (10 ℃ to 30 ℃); glycol ethers such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol monoethyl ether acetate, and triethylene glycol dimethyl ether; amide group-containing organic solvents such as N, N-dimethylformamide, acetamide, and N, N-dimethylacetamide; dimethyl sulfoxide (DMSO).

The solvent y used in the mixing step included in the production method is preferably a solvent having low solubility in the solvent of the perovskite compound, and examples of the solvent y used in the mixing step include esters such as methyl formate, ethyl formate, propyl formate, pentyl formate, methyl acetate, ethyl acetate, and pentyl acetate; ketones such as γ -butyrolactone, N-methyl-2-pyrrolidone, acetone, dimethyl ketone, diisobutyl ketone, cyclopentanone, cyclohexanone, and methylcyclohexanone; ethers such as diethyl ether, methyl tert-butyl ether, diisopropyl ether, dimethoxymethane, dimethoxyethane, 1, 4-dioxane, 1, 3-dioxolane, 4-methyldioxolane, tetrahydrofuran, methyltetrahydrofuran, anisole, and phenetole; organic solvents having a nitrile group such as acetonitrile, isobutyronitrile, propionitrile, and methoxyacetonitrile; organic solvents having a carbonate group such as ethylene carbonate and propylene carbonate; organic solvents having halogenated hydrocarbon groups such as methylene chloride and chloroform; an organic solvent having a hydrocarbon group such as n-pentane, cyclohexane, n-hexane, benzene, toluene, or xylene.

The difference in solubility between the 2 solvents having different solubilities is preferably (100. mu.g/solvent 100g) to (90 g/solvent 100g), more preferably (1 mg/solvent 100g) to (90 g/solvent 100 g). From the viewpoint of the difference in solubility of (100. mu.g/solvent 100g) to (90 g/solvent 100g), for example, when the mixing step is carried out at room temperature (10 ℃ C. to 30 ℃ C.), it is more preferable that the solvent x used in the step of obtaining a solution is an amide group-containing organic solvent such as N, N-dimethylacetamide, or dimethyl sulfoxide; the solvent y used in the mixing step is an organic solvent having a halogenated hydrocarbon group such as methylene chloride or chloroform, or an organic solvent having a hydrocarbon group such as n-pentane, cyclohexane, n-hexane, benzene, toluene, or xylene.

As a method for obtaining a perovskite compound from the obtained dispersion liquid containing a perovskite compound, a method of collecting only a perovskite compound by performing solid-liquid separation is exemplified.

Examples of the solid-liquid separation method include a method such as filtration and a method using evaporation of a solvent. Only the perovskite compound can be collected by performing solid-liquid separation.

(embodiment 2 of the method for producing a perovskite Compound)

The method for producing a perovskite compound may include: a step of dissolving the component B, the component X and the component A in a high-temperature solvent z to obtain a solution h; and a step of cooling the obtained solution h.

More specifically, there may be enumerated, for example: dissolving a compound containing the component B and the component X and a compound containing the component A or the component A and the component X in a high-temperature solvent z to obtain a solution h; and a step of cooling the obtained solution h.

The step of adding the compound containing the component B and the component X and the compound containing the component a or the component a and the component X to a high-temperature solvent z to dissolve them to obtain a solution h, or the step of adding the compound containing the component B and the component X and the compound containing the component a or the component a and the component X to the solvent z to raise the temperature to obtain the solution h.

In the above production method, the perovskite compound according to the present invention is precipitated by the difference in solubility due to the temperature difference, whereby the perovskite compound according to the present invention can be produced.

The above-mentioned production method preferably includes a step of adding a capping ligand from the viewpoint of stably dispersing the perovskite compound. The capping ligand is preferably added before the cooling step, and more preferably added to a solution h in which the components A, B and X are dissolved.

The production method preferably includes a step of removing coarse particles by means of centrifugation, filtration, or the like after the cooling step. The size of the coarse particles removed by the removal step is preferably 10 μm or more, more preferably 1 μm or more, and further preferably 500nm or more.

The high-temperature solvent z is a solvent having a temperature at which the compound containing the components B and X and the compound containing the component A or the component A and X can be dissolved, and is preferably a solvent having a temperature of 60 to 600 ℃ and more preferably 80 to 400 ℃.

The cooling temperature is preferably-20 to 50 ℃ and more preferably-10 to 30 ℃.

The cooling rate is preferably 0.1 to 1500 ℃/min, more preferably 10 to 150 ℃/min.

The solvent z used in the above production method is not particularly limited as long as it can dissolve the compound containing the component B and the component X and the compound containing the component a or the component a and the component X, and examples thereof include esters such as methyl formate, ethyl formate, propyl formate, pentyl formate, methyl acetate, ethyl acetate, and pentyl acetate; ketones such as γ -butyrolactone, N-methyl-2-pyrrolidone, acetone, dimethyl ketone, diisobutyl ketone, cyclopentanone, cyclohexanone, and methylcyclohexanone; ethers such as diethyl ether, methyl tert-butyl ether, diisopropyl ether, dimethoxymethane, dimethoxyethane, 1, 4-dioxane, 1, 3-dioxolane, 4-methyldioxolane, tetrahydrofuran, methyltetrahydrofuran, anisole, and phenetole; alcohols such as methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, 2-butanol, t-butanol, 1-pentanol, 2-methyl-2-butanol, methoxypropanol, diacetone alcohol, cyclohexanol, 2-fluoroethanol, 2,2, 2-trifluoroethanol, and 2,2,3, 3-tetrafluoro-1-propanol; glycol ethers such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol monoethyl ether acetate, and triethylene glycol dimethyl ether; amide group-containing organic solvents such as N, N-dimethylformamide, acetamide, and N, N-dimethylacetamide; organic solvents having a nitrile group such as acetonitrile, isobutyronitrile, propionitrile, and methoxyacetonitrile; organic solvents having a carbonate group such as ethylene carbonate and propylene carbonate; organic solvents having halogenated hydrocarbon groups such as methylene chloride and chloroform; organic solvents having hydrocarbon groups such as n-pentane, cyclohexane, n-hexane, benzene, toluene, and xylene; dimethyl sulfoxide and 1-octadecene.

As a method for obtaining a perovskite compound from the obtained dispersion liquid containing a perovskite compound, a method of collecting only a perovskite compound by performing solid-liquid separation is exemplified.

Examples of the solid-liquid separation method include a method such as filtration and a method using evaporation of a solvent. Only the perovskite compound can be collected by performing solid-liquid separation.

As (1) a method for producing a composition of an embodiment in which the semiconductor fine particles containing a perovskite compound are mixed in (5) at any step included in the method for producing a perovskite compound, there can be mentioned:

(a-1) comprising: a step of dissolving a compound containing component B and component X, a compound containing component A or component A and component X, and (5) in a solvent X to obtain a solution g; and a step of mixing the solution g with a solvent y having a lower solvent solubility for the perovskite compound than the solvent x to obtain a dispersion a;

a step of separating and obtaining (1) containing a perovskite compound from the dispersion liquid a;

a step of dispersing (1) in (3) to obtain a dispersion liquid b;

and a step of mixing the dispersion liquid b with (2) and (4),

(a-2) comprising: heating a mixture of a compound containing component B and component X, a compound containing component A or component A and component X, (5) and a solvent z to obtain a solution h;

cooling the solution h to obtain a dispersion a;

a step of separating and obtaining (1) containing a perovskite compound from the dispersion liquid a;

a step of dispersing (1) in (3) to obtain a dispersion liquid b;

and a step of mixing the dispersion liquid b with (2) and (4),

(b-1) comprising: a step of dissolving a compound containing component B and component X, a compound containing component A or component A and component X, and (5) in a solvent X to obtain a solution g;

a step of mixing the solution g with a solvent y having a lower solvent solubility for the perovskite compound than the solvent x to obtain a dispersion a;

a step of separating and obtaining (1) containing a perovskite compound from the dispersion liquid a;

a step of dispersing (2) in (3) to obtain a dispersion liquid b;

and a step of mixing the dispersion liquid b with (1) and (4),

and (b-2) comprises: heating a mixture of a compound containing the component B and the component X, a compound containing the component A or the component A and the component X, and (5) a solvent z to obtain a solution h;

cooling the solution h to obtain a dispersion a;

a step of separating and obtaining (1) containing a perovskite compound from the dispersion liquid a;

a step of dispersing (2) in (3) to obtain a dispersion liquid b;

and a step of mixing the dispersion liquid b with (1) and (4).

Process for producing cured product

By using the composition obtained by the above-mentioned production method, a cured product can be produced.

The method for producing a cured product according to the present embodiment may include: a step of dispersing (1) in (3) to obtain a dispersion liquid; mixing the dispersion liquid with the dispersion liquid obtained in the step (2) to obtain a mixed liquid; mixing the mixed solution with the mixture (4') to obtain a composition; a step of polymerizing a polymerizable compound contained in the composition to obtain a composition containing a polymer; and a method for producing a cured product obtained by the step (3) of removing the polymer-containing composition.

(4') polymerizable Compound

The method for producing a cured product of the present invention may comprise: a step of dispersing (1) in (3) to obtain a dispersion liquid; mixing the dispersion liquid with the dispersion liquid obtained in the step (2) to obtain a mixed liquid; mixing the mixed solution with the mixture in the step (4') to obtain a composition; and a method for producing a cured product obtained in the step (3) except for the composition.

(4') Polymer

The method for producing a cured product according to the present embodiment may further include: a step of dispersing (1) in (3) to obtain a dispersion liquid; mixing the dispersion liquid with (4') to obtain a mixed liquid; mixing the mixed solution with the mixture obtained in the step (2) to obtain a composition; and a method for producing a cured product obtained in the step (3) except for the composition.

The method for producing a cured product according to the present embodiment may further include: a step of dispersing (1) in (3) to obtain a dispersion liquid; mixing the dispersion liquid with the dispersion liquid (4') to obtain a mixed liquid; mixing the mixed solution with the mixture obtained in the step (2) to obtain a composition; and a method for producing a cured product obtained in the step (3) except for the composition.

(4') and (4') are the same as those described for the polymerizable compound and the polymer contained in (4) above, respectively.

The method for producing a cured product may include the step of mixing (5) as in the method for producing a composition, and the step of mixing (5) may be performed in any step included in the method for producing semiconductor fine particles.

When the semiconductor fine particles containing a perovskite compound are used as (1), from the viewpoint of improving the dispersibility of (1), (5) is preferably mixed in any step included in the method for producing semiconductor fine particles.

As (1) a method for producing a cured product according to the embodiment in which the semiconductor fine particles containing a perovskite compound are mixed with (5) in any step included in the method for producing semiconductor fine particles, there can be mentioned, for example:

(a-2-1) comprising: heating a mixture of a compound containing the component B and the component X, a compound containing the component A or the component A and the component X, and (5) a solvent z to obtain a solution h;

cooling the solution h to obtain a dispersion a;

a step of separating and obtaining (1) containing a perovskite compound from the dispersion liquid a;

a step of dispersing (1) in (3) to obtain a dispersion liquid b;

a step of mixing the dispersion liquid b with (2) and (4') to obtain a composition;

a step of polymerizing a polymerizable compound contained in the composition to obtain a composition containing a polymer;

and a method for producing a cured product in the step (3) which is removed from a composition containing a polymer,

and (a-2-2) comprises: heating a mixture of a compound containing component B and component X, a compound containing component A or component A and component X, (5) and a solvent z to obtain a solution h;

cooling the solution h to obtain a dispersion a;

a step of separating and obtaining (1) containing a perovskite compound from the dispersion liquid a;

a step of dispersing (1) in (3) to obtain a dispersion liquid b;

a step of mixing the dispersion liquid b with (2) and (4 ″) to obtain a composition;

and a method for producing a cured product obtained in the step (3) except for the composition.

In the above production method, in the case of using silazane as (2), the method for producing a cured product according to the present embodiment may include a step of subjecting a mixed solution containing silazane to a modification treatment.

The time point of the modification treatment is not particularly limited, and the method for producing a cured product of the present embodiment may include, for example: a step of dispersing (1) in (3) to obtain a dispersion liquid;

mixing the dispersion liquid with (2') to obtain a mixed liquid;

a step of subjecting the mixed solution to a modification treatment to obtain a mixed solution containing a silane-modified body;

mixing the mixed solution containing the modified silazane with the mixture (4') to obtain a composition;

and a step of removing (3) from the composition.

The step of removing (3) may be a step of allowing the composition to stand at room temperature to dry naturally, or a step of drying the composition under reduced pressure or heating the composition using a vacuum dryer.

In the step of removing (3), the temperature and time may be appropriately selected depending on the kind of (3).

For example, the mixture is left to stand at 0 to 300 ℃ for 1 minute to 7 days to be dried, and then (3) is removed.

In the case of using (4'), a known polymerization reaction such as radical polymerization can be suitably used as a method for polymerizing the polymerizable compound.

For example, in the case of radical polymerization, a radical polymerization initiator is added to any one of the above-mentioned steps of obtaining a dispersion, obtaining a mixed solution, or obtaining a composition, and a polymerizable compound is polymerized, wherein a polymerization reaction can be carried out by generating radicals.

The radical polymerization initiator is not particularly limited, and examples thereof include a photoradical polymerization initiator.

Examples of the photo radical polymerization initiator include bis (2,4, 6-trimethylbenzoyl) -phenylphosphine oxide and the like.

In the case of using (4 ″), the polymer may be a polymer dissolved in a solvent.

The solvent for dissolving the polymer is not particularly limited as long as it is a solvent capable of dissolving the polymer (resin), and is preferably one which does not easily dissolve the polymer (1) according to the present invention.

Examples of the solvent for dissolving the polymer include esters such as methyl formate, ethyl formate, propyl formate, pentyl formate, methyl acetate, ethyl acetate, and pentyl acetate; ketones such as γ -butyrolactone, N-methyl-2-pyrrolidone, acetone, dimethyl ketone, diisobutyl ketone, cyclopentanone, cyclohexanone, and methylcyclohexanone; ethers such as diethyl ether, methyl tert-butyl ether, diisopropyl ether, dimethoxymethane, dimethoxyethane, 1, 4-dioxane, 1, 3-dioxolane, 4-methyldioxolane, tetrahydrofuran, methyltetrahydrofuran, anisole, and phenetole; alcohols such as methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, 2-butanol, t-butanol, 1-pentanol, 2-methyl-2-butanol, methoxypropanol, diacetone alcohol, cyclohexanol, 2-fluoroethanol, 2,2, 2-trifluoroethanol, and 2,2,3, 3-tetrafluoro-1-propanol; glycol ethers such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol monoethyl ether acetate, and triethylene glycol dimethyl ether; amide group-containing organic solvents such as N, N-dimethylformamide, acetamide, and N, N-dimethylacetamide; organic solvents having a nitrile group such as acetonitrile, isobutyronitrile, propionitrile, and methoxyacetonitrile; organic solvents having a carbonate group such as ethylene carbonate and propylene carbonate; organic solvents having halogenated hydrocarbon groups such as methylene chloride and chloroform; organic solvents having hydrocarbon groups such as n-pentane, cyclohexane, n-hexane, benzene, toluene, and xylene; dimethyl sulfoxide (DMSO).

Among them, esters such as methyl formate, ethyl formate, propyl formate, pentyl formate, methyl acetate, ethyl acetate, and pentyl acetate are more preferable; ketones such as γ -butyrolactone, N-methyl-2-pyrrolidone, acetone, dimethyl ketone, diisobutyl ketone, cyclopentanone, cyclohexanone, and methylcyclohexanone; ethers such as diethyl ether, methyl tert-butyl ether, diisopropyl ether, dimethoxymethane, dimethoxyethane, 1, 4-dioxane, 1, 3-dioxolane, 4-methyldioxolane, tetrahydrofuran, methyltetrahydrofuran, anisole, and phenetole; organic solvents having a nitrile group such as acetonitrile, isobutyronitrile, propionitrile, and methoxyacetonitrile; organic solvents having a carbonate group such as ethylene carbonate and propylene carbonate; organic solvents having halogenated hydrocarbon groups such as methylene chloride and chloroform; organic solvents having a hydrocarbon group such as n-pentane, cyclohexane, n-hexane, benzene, toluene, xylene, etc., more preferably organic solvents having a halogenated hydrocarbon group such as methylene chloride, chloroform, etc., because of their low polarity and thought to be less soluble in (1) according to the present invention; an organic solvent having a hydrocarbon group such as n-pentane, cyclohexane, n-hexane, benzene, toluene, or xylene.

Method for producing film

The composition obtained by the above-mentioned production method can be used for producing a thin film.

The method for manufacturing a thin film according to the present embodiment may include: a step of dispersing (1) in (3) to obtain a dispersion liquid;

mixing the dispersion liquid with (4') to obtain a mixed liquid;

mixing the mixed solution with the mixture obtained in the step (2) to obtain a composition;

coating the composition on a substrate to obtain a coating film;

a step of obtaining a coating film containing a polymer by polymerizing a polymerizable compound contained in the coating film;

and a process for producing a thin film comprising the step of removing (3) from the coating film containing the polymer,

can also be the following: a step of dispersing (1) in (3) to obtain a dispersion liquid;

mixing the dispersion liquid with the dispersion liquid (4') to obtain a mixed liquid;

mixing the mixed solution with the mixture obtained in the step (2) to obtain a composition;

coating the composition on a substrate to obtain a coating film;

and a method for producing a thin film, comprising the step of removing (3) from the coating film.

The step (5) may be added in any step included in the above-mentioned production method.

In addition, in any step included in the method for producing semiconductor fine particles, particles including (5) may be used as (1) in the mixing (5).

In the case of (1) using semiconductor fine particles containing a perovskite compound, it is preferable to mix (5) in any step of the method for producing semiconductor fine particles from the viewpoint of improving the dispersibility of (1).

In the above-described production method, when silazane is used as (2), the method for producing a thin film according to the present embodiment may include a step of performing a modification treatment on a mixed solution containing silazane.

The time point for performing the modification treatment is not particularly limited, and the method for producing a thin film according to the present embodiment may include, for example:

a step of dispersing (1) in (3) to obtain a dispersion liquid;

mixing the dispersion liquid with (2') to obtain a mixed liquid;

a step of subjecting the mixed solution to a modification treatment to obtain a mixed solution containing a silane-modified body;

mixing the mixed solution containing the modified silazane with the mixture (4') to obtain a composition;

coating the composition on a substrate to obtain a coating film;

and a step of removing (3) from the coating film.

Specific methods for obtaining a coating film on a substrate from the coating composition contained in the method for producing a thin film according to the present embodiment include, but are not particularly limited to, known coating and application methods such as a gravure coating method, a bar coating method, a printing method, a spray coating method, a drop coating method (drop-cast), a spin coating method, a dipping method, and a slit coating method.

The step of removing (3) included in the method for producing a thin film of the present embodiment is the same as described above.

In the case of using (4'), the method for polymerizing the polymerizable compound is the same as described above.

In the case of using (4'), the polymer may be one dissolved in a solvent, and the more preferable solvent is the same as described above.

The thin film can be formed on a substrate by the thin film manufacturing method. Further, the film can be peeled from the substrate.

Method for manufacturing laminated structure

The method for manufacturing a laminated structure of the present embodiment includes: and a step of forming another film described later on the thin film obtained by the thin film production method.

The other film may be formed by a coating step or a step of bonding other films, as in the above-described method for producing a thin film.

Any adhesive may be used in the bonding step.

The adhesive is not particularly limited as long as it does not dissolve the compounds (1) and (2), and a known adhesive can be used.

Method for manufacturing light emitting device

The method for producing a light-emitting device of the present embodiment includes, for example, a production method including the steps of providing a light source and providing the composition, cured product, thin film, or laminated structure of the present invention on an optical path downstream from the light source.

Composition

The composition of the present embodiment has luminescence. "luminescent" refers to the property of luminescence. The luminescence property is preferably a property of emitting light by excitation, and more preferably a property of emitting light by excitation of excitation light. The wavelength of the excitation light may be, for example, 200nm to 800nm, 250nm to 750nm, or 300nm to 700 nm.

The composition of the present embodiment includes the above-described (1), (2), (3) and (4).

The composition of the present embodiment may contain (5).

The composition of the present embodiment may contain other components than the above-described components (1) to (5).

Examples of the other components include impurities, an amorphous compound having an elemental component constituting the perovskite compound when the perovskite compound is used as (1), and a polymerization initiator.

The content of the other components is preferably 10% by mass or less, more preferably 5% by mass or less, and still more preferably 1% by mass or less, based on the total mass of the composition.

Cured product

By the above-described production method of the present embodiment, a cured product containing, for example, (1), (2), and (4) and having a total content ratio of (1), (2), and (4) of 90 mass% or more with respect to the total mass of the cured product can be obtained.

In the cured product, the total content ratio of (1), (2), and (4) may be 95% by mass or more, may be 99% by mass or more, and may be 100% by mass, based on the total mass of the cured product.

The cured product may contain (5), and may be a cured product containing (1), (2), (4), and (5) and having a total content ratio of (1), (2), (4), and (5) of 90 mass% or more with respect to the total mass of the cured product.

The total content of (1), (2), (4), and (5) in the cured product may be 95% by mass or more, may be 99% by mass or more, and may be 100% by mass, based on the total mass of the cured product.

In the cured product, (1) is preferably dispersed in (4).

Film

The film of the present embodiment is a film composed of a composition containing (1), (2) and (4), and has a sea-island phase separation structure in which (4) is present in a sea-like hydrophobic region and (1) and (2) are present in an island-like hydrophilic region, respectively, and the island-like hydrophilic region is 0.1 μm to 100 μm. Further, (1) is preferably the above-mentioned compound having a perovskite crystal structure.

By the above-described production method of the present embodiment, a film including, for example, (1), (2), and (4) and having a total content ratio of (1), (2), and (4) of 90 mass% or more with respect to the total mass of the film can be obtained.

The total content of (1), (2), and (4) in the film may be 95% by mass or more, may be 99% by mass or more, and may be 100% by mass, based on the total mass of the film.

The film may contain (5), or may contain (1), (2), (4) and (5), and the total content of (1), (2), (4) and (5) may be 90% by mass or more based on the total mass of the film.

The total content of (1), (2), (4), and (5) in the film may be 95% by mass or more, may be 99% by mass or more, and may be 100% by mass, based on the total mass of the film.

In the film, (1) is more preferably dispersed in (4).

The shape of the film is not particularly limited, and may be any shape such as a sheet shape and a rod shape. In the present specification, the term "rod-like shape" refers to, for example, a shape having anisotropy. Examples of the shape having anisotropy include a plate shape having sides of different lengths.

The thickness of the film may be 0.01 μm to 1000mm, or 0.1 μm to 10mm, or 1 μm to 1 mm.

In the present specification, the thickness of the film can be measured at an arbitrary 3 points by a micrometer, and the average value thereof is calculated.

The film may be a single layer or a multilayer. In the case of multiple layers, the same embodiment of the composition may be used for each layer, or different embodiments of the composition may be used for each layer.

Sea-island phase separation Structure

The composition, cured product or film obtained by the production method of the present embodiment is characterized by having a sea-island phase separation structure.

The sea-island phase separation structure is a phase separation structure having a sea-like hydrophobic region and an island-like hydrophilic region which are incompatible with each other.

The sea-like hydrophobic region is a region where (3) and (4) are present or a region where (4) is present, and the island-like hydrophilic region is a region where (1) the particles encapsulated in (2) or aggregates of the particles thereof are present (hereinafter referred to as an island-like phase).

With such a configuration, (2) oxygen and moisture which are substances causing the deterioration of (1) are adsorbed, and (1) is sufficiently blocked from oxygen and moisture existing outside and protected, thereby improving durability against water vapor.

For example, the total blending ratio of (1) and (2) or the blending ratio of (1) and (2) in the above range with respect to the whole composition can naturally generate particles (1) encapsulated in (2) or aggregates of the particles.

The proportion of the number of (1) contained in (2) to the total number of (1) is preferably 30 to 100%, more preferably 50 to 100%, and still more preferably 70 to 100%.

The ratio of the number of (1) contained in (2) to the total number of (1) is, for example, a method of observing a cured product or a thin film by using TEM. For example, a method of observing a region of 500 μm in vertical and 500 μm in horizontal directions with a TEM on a cured product or a thin film and calculating the number ratio of (1) to (2) to the total number of (1) in the observed region can be cited.

As a method for observing the form of (1) encapsulated in (2) in the island-like phase separation structure and the island-like hydrophilic region, for example, a method for observing a cured product or a thin film using SEM, TEM, or the like can be cited. Further, the detailed element distribution can be analyzed by EDX measurement using SEM or TEM.

The shape of the island-like phase is not particularly limited, and may be a sphere, a twisted sphere, a go, a rugby, or the like. The average size of the island-like phase is not particularly limited, and the average maximum Feret (Feret) diameter is 0.1 to 100 μm, preferably 0.1 to 30 μm, and more preferably 0.1 to 20 μm. By setting the average maximum Ferrett diameter of the island-like phase to 0.1 μm or more, moisture from the outside can be effectively blocked, and (1) existing inside the island-like phase can be sufficiently protected. From the viewpoint of maintaining the visible light transmittance, the average maximum Ferrett diameter of the island-like phase is more preferably 100 μm or less. As a method of calculating the average maximum feret diameter, for example, a method of observing 20 or more island-like phases using a TEM and obtaining an average value of the average maximum feret diameters of the respective island-like phases can be cited.

Specifically, a method of observing 20 island-like phases with a TEM and obtaining an average value of the average maximum feret diameter of each island-like phase can be cited.

Dispersion of semiconductor particles

From the viewpoint of improving the light-emitting characteristics of the composition, cured product or film, (1) is more preferably highly dispersible. Examples of the method for evaluating the dispersibility of (1) include observation by TEM, a small-angle X-ray scattering method (hereinafter, also referred to as SAXS), and a method for evaluating a difference in energy value between an emission wavelength PLtop and a band edge (hereinafter, also referred to as a band gap (bandgap)) Eg.

Dispersion D using the difference in energy value between emission wavelength PLtop and band edge Eg

It is known from the known literature (reference: Nano Letters 2015, 15, 3692-. When (1) having a small average particle diameter is present in a highly dispersed state, the difference between the energy values of the emission wavelength PLtop and the band edge Eg is small. However, the dispersibility of (1) is poor, and (1) when particles having a large average particle diameter are aggregated to generate particles, a red shift of the band edge Eg is caused, and on the other hand, the difference in energy value between the emission wavelength PLtop and the band edge Eg is large because the emission wavelength PLtop does not change greatly.

Therefore, the difference D between the energy values of the emission wavelength PLtop and the band edge Eg is calculated from the following formula (E1), and the dispersibility of (1) can be evaluated from the magnitude of the difference D.

D ═ PLtop (eV) -eg (eV) … formula (E1)

From the viewpoint of the presence of (1) having a small average particle diameter in a highly dispersed state, D is preferably 0.20 or less, more preferably 0.15 or less, further preferably 0.12 or less, and particularly preferably 0.10 or less.

In another aspect of the present invention, D is preferably 0.0001 to 0.20, more preferably 0.0002 to 0.15, further preferably 0.0005 to 0.12, and particularly preferably 0.001 to 0.10, from the viewpoint of high dispersion of (1) having a small average particle diameter.

Luminous wavelength PLtop

The emission wavelength PLtop is a value that can be converted into an energy value (eV) using a wavelength at which the emission is maximum in the emission spectrum. The formula for converting the wavelength λ (nm) into an energy value (eV) is generally known as the following formula (E2), and can be calculated by using the following formula (E2).

E (ev) ═ hc/λ 1240/λ, (nm) · formula (E2)

(E: energy value (eV), h: Planck constant, c: speed of light, lambda: wavelength (nm))

Edge of belt Eg

The band edge Eg is obtained by a so-called Taus Plot method in which the ultraviolet-visible absorption spectrum is measured and the light absorption coefficient α calculated from the transmittance data is used. Eg was obtained by plotting the square root of α h ν against h ν using the following formula (E3).

αhν∝(hν-Eg)²The formula (E3)

(α: light absorption coefficient, h: Planck constant, v: frequency, Eg: band edge (eV))

Concentration measurement of semiconductor Fine particles

The amount of (1) contained in the dispersion is measured by inductively coupled plasma mass spectrometry (ICP-MS) (e.g., Perkin Elmer, BLAN DRCII) and ion chromatography (e.g., Thermo Fisher Scientific, Integrion).

The measurement is carried out after (1) is dissolved in a good solvent having high solubility of (1) such as N, N-dimethylformamide.

Measurement of luminescence Spectrum

The emission spectrum of the cured product of this embodiment was measured at room temperature and under the atmosphere with an excitation light of 450nm using an absolute PL quantum yield measuring apparatus (for example, C9920-02, manufactured by Hamamatsu Photonics corporation).

Measurement of Quantum yield

The quantum yield of the cured product of the present embodiment was measured at room temperature under the atmosphere with an excitation light of 450nm using an absolute PL quantum yield measuring apparatus (for example, C9920-02, manufactured by Hamamatsu Photonics corporation).

Measurement of ultraviolet and visible absorption Spectroscopy

The ultraviolet-visible absorption spectrum of the cured product of the present embodiment is measured at room temperature under the atmosphere using an ultraviolet-visible near-infrared spectrophotometer (for example, V-670, manufactured by japan spectro-photometer).

Evaluation of durability to Water vapor

The composition, cured product and film of the present embodiment were adjusted to a thickness of 100 μm and 1cm × 1cm, the concentration of (1) contained in the composition, cured product and film was adjusted to about 1000 μ g/mL, and the composition, cured product and film were placed in a constant-temperature and constant-humidity tank at a holding temperature of 60 to 65 ℃ and a humidity of 80 to 90% to perform a durability test with respect to water vapor.

The quantum yield before and after the test was measured, and as an index of durability against water vapor, a value of (quantum yield after durability test against water vapor for X' days)/(quantum yield before durability test against water vapor) was used for evaluation.

The durability to water vapor in the 3-day durability test to water vapor of the composition, cured product, and film of the present embodiment measured by the above-described measurement method may be 0.4 or more, 0.6 or more, and 0.7 or more.

The durability to water vapor in the 3-day durability test for water vapor of the composition, cured product, and film of the present embodiment measured by the above-described measurement method may be 1.0 or less.

In another aspect of the present invention, the durability to water vapor in the 3-day durability test to water vapor of the composition, cured product, and film of the present embodiment measured by the above-described measurement method is preferably 0.4 to 1.0, more preferably 0.6 to 1.0, and even more preferably 0.7 to 1.0.

The durability to water vapor in the 5-day durability test to water vapor of the composition, cured product, and film of the present embodiment measured by the above-described measurement method may be 0.3 or more, 0.4 or more, and 0.5 or more.

The durability to water vapor in the 5-day durability test for water vapor of the composition, cured product, and film of the present embodiment measured by the above-described measurement method may be 1.0 or less.

In another aspect of the present invention, the durability to water vapor in the 5-day durability test to water vapor of the composition, cured product, and film of the present embodiment measured by the above-described measurement method is preferably 0.3 to 1.0, more preferably 0.4 to 1.0, and further preferably 0.5 to 1.0.

The durability to water vapor in the durability test to water vapor for 7 days as measured by the above-described measuring method of the composition, cured product, and film of the present embodiment may be 0.3 or more, or 0.4 or more, or 0.5 or more.

The durability to water vapor in the durability test to water vapor for 7 days, which is measured by the above-described measuring method, of the composition, cured product, and film of the present embodiment may be 1.0 or less.

In another aspect of the present invention, the durability to water vapor in the durability test to water vapor for 7 days measured by the above-described measurement method is preferably 0.3 to 1.0, more preferably 0.4 to 1.0, and further preferably 0.5 to 1.0 in the composition, cured product, and film of the present embodiment.

Laminated structure

The laminated structure of the present invention has a plurality of layers, at least one of which is the above-described thin film.

In the multilayer structure, the layers other than the thin film may be any layers such as a substrate, a barrier layer, and a light scattering layer.

The shape of the laminated film is not particularly limited, and may be any shape such as a sheet or a rod.

(substrate)

The layer that the laminated structure according to the present invention may have is not particularly limited, and a substrate may be used.

The substrate is not particularly limited, and may be a film, and a transparent material is preferable from the viewpoint of light emission. As the substrate, for example, a polymer such as polyethylene terephthalate, a known substrate such as glass, or the like can be used.

For example, in the laminated structure, the thin film may be provided on a substrate.

Fig. 1 is a schematic cross-sectional view showing the structure of the laminated structure of the present embodiment. The thin film 10 of the present embodiment is provided between the 1 st substrate 20 and the 2 nd substrate 21 of the 1 st stacked structure 1 a. The film 10 is sealed by a sealing layer 22.

One aspect of the present invention is a laminated structure 1a including a1 st substrate 20, a2 nd substrate 21, a film 10 according to the present embodiment positioned between the 1 st substrate 20 and the 2 nd substrate 21, and a sealant 22, wherein the sealant is disposed on a surface of the film 10 not in contact with the 1 st substrate 20 and the 2 nd substrate 21.

(Barrier layer)

The layer that the laminated structure of the present invention may have is not particularly limited, and a barrier layer may be mentioned. In order to protect the mixture from water vapor of the outside air and air in the atmosphere, a barrier layer may be included.

The barrier layer is not particularly limited, and a transparent barrier layer is preferable from the viewpoint of extracting emitted light, and for example, a known barrier layer such as a polymer such as polyethylene terephthalate, a glass film, or the like can be used.

(light scattering layer)

The layer that the laminated structure according to the present invention may have is not particularly limited, and examples thereof include a light scattering layer. From the viewpoint of effectively utilizing incident light, a light scattering layer may be included.

The light-scattering layer is not particularly limited, and a transparent light-scattering layer is preferable from the viewpoint of taking out light emitted. As the light scattering layer, known light scattering layers such as light scattering particles such as silicon oxide particles and a diffusion enhancement film can be used.

Light emitting device

The light-emitting device according to the present invention can be obtained by combining the composition according to the embodiment of the present invention or the above-described layered structure with a light source. The light-emitting device is a device that emits light from a light source to a composition or a layered structure provided downstream, and emits the light from the composition or the layered structure to extract the light. In the light-emitting device, the multilayer structure may include, in addition to the thin film, the substrate, the barrier layer, and the light scattering layer, any of a light reflecting member, a luminance enhancing section, a prism sheet, a light guide plate, and a dielectric material layer between elements.

One aspect of the present invention is a light-emitting device 2 in which a prism sheet 50, a light guide plate 60, the first stacked structure 1a, and a light source 30 are stacked in this order.

(light source)

The light source constituting the light-emitting device according to the present invention is not particularly limited, and a light source having an emission wavelength of 600nm or less is more preferable from the viewpoint of causing the semiconductor fine particles in the composition, the cured product, the thin film, or the laminated structure to emit light. As the light source, for example, a known light source such as a Light Emitting Diode (LED) such as a blue light emitting diode, a laser, or EL can be used.

(light reflecting Member)

The layer that the laminated structure constituting the light-emitting device according to the present invention may have is not particularly limited, and a light-reflecting member may be used. The light reflecting member may be included from the viewpoint of irradiating light from a light source to the composition, cured product, film, or laminated structure. The light reflection member is not particularly limited and may be a reflection film.

As the reflective film, for example, a known reflective film such as a mirror, a reflective particle film, a reflective metal film, or a reflector can be used.

(Brightness enhancing unit)

The layer that the laminated structure constituting the light-emitting device according to the present invention may have is not particularly limited, and a luminance enhancing portion may be mentioned. The luminance enhancement unit may be included from the viewpoint of reflecting and returning a part of the light in the direction of transmission.

(prism sheet)

The layer that the laminated structure constituting the light-emitting device according to the present invention may have is not particularly limited, and a prism sheet may be mentioned. The prism sheet typically has a base member and a prism member. The base material portion may be omitted in the case of an adjacent member. The prism sheet can be bonded to an adjacent member via any suitable adhesive layer (e.g., an adhesive layer or an adhesive layer). The prism sheet is composed of multiple unit prisms arranged in a convex shape on the side opposite to the observation side (back side). Since the convex portion of the prism sheet is disposed toward the rear surface side, light transmitted through the prism sheet can be easily condensed. Further, if the convex portion of the prism sheet is disposed toward the rear surface side, the reflected light is less without entering the prism sheet than if the convex portion is disposed toward the observation side, and a display with high luminance can be obtained.

(light guide plate)

The layer that the laminated structure constituting the light-emitting device according to the present invention may have is not particularly limited, and a light guide plate may be mentioned. As the light guide plate, any suitable light guide plate such as a light guide plate having a lens pattern formed on the back surface side, a light guide plate having a prism shape formed on the back surface side and/or the observation side, or the like can be used so that light from the lateral direction can be deflected in the thickness direction.

(dielectric material layer between elements)

The layer that the laminated structure constituting the light-emitting device according to the present invention may have is not particularly limited, and may be a layer (dielectric material layer between elements) including 1 or more dielectric materials on the optical path between adjacent elements (layers).

The medium contained in the medium material layer between the elements is not particularly limited, and includes vacuum, air, gas, optical material, adhesive, optical adhesive, glass, polymer, solid, liquid, gel, cured material, optical bonding material, refractive index matching or non-matching material, graded index material, cladding or anti-cladding material, spacer (spacer), silicone, brightness enhancing material, scattering or diffusing material, reflective or anti-reflective material, wavelength selective anti-reflective material, color filter, or suitable medium known in the art.

Specific examples of the light-emitting device according to the present invention include light-emitting devices including wavelength conversion materials for EL displays and liquid crystal displays.

Specifically, there may be mentioned:

(e1) a backlight (on-edge backlight) in which the composition of the present invention is sealed in a glass tube or the like, and is disposed between a blue light emitting diode as a light source and a light guide plate along an end surface (side surface) of the light guide plate to convert blue light into green light and red light;

(e2) a backlight (surface mount type backlight) in which the composition of the present invention is formed into a sheet, a film sealed by sandwiching 2 barrier films is placed on a light guide plate, and blue light emitted from a blue light emitting diode placed on an end face (side face) of the light guide plate to the sheet is converted into green light and red light by the light guide plate;

(e3) a backlight (chip-on backlight) in which the composition of the present invention is dispersed in a resin or the like, is disposed in the vicinity of a light emitting portion of a blue light emitting diode, and converts blue light irradiated thereto into green light and red light; and

(e4) the composition of the present invention is dispersed in a resist (resist), and is provided on a color filter, and a backlight for converting blue light irradiated from a light source into green light and red light.

In addition, a specific example of the light-emitting device according to the present invention is an illumination device which is formed by molding the composition according to the embodiment of the present invention, is disposed downstream of a blue light-emitting diode as a light source, and converts blue light into green light and red light to emit white light.

Display

As shown in fig. 2, the display 3 of the present embodiment includes a liquid crystal panel 40 and the light emitting device 2 described above in this order from the observation side. The light-emitting device 2 includes a2 nd stacked structure 1b and a light source 30. The 2 nd stacked structure 1b is a stacked structure in which the 1 st stacked structure 1a further includes a prism sheet 50 and a light guide plate 60. The display may be provided with any other suitable means.

One aspect of the present invention is a liquid crystal display 3 in which a liquid crystal panel 40, a prism sheet 50, a light guide plate 60, the aforementioned 1 st stacked structural body 1a, and a light source 30 are sequentially stacked.

(liquid crystal panel)

The liquid crystal panel typically includes a liquid crystal cell, an observation-side polarizing plate disposed on an observation side of the liquid crystal cell, and a back-side polarizing plate disposed on a back side of the liquid crystal cell. The observation-side polarizing plate and the back-side polarizing plate may be arranged such that their absorption axes are substantially orthogonal or parallel to each other.

(liquid Crystal cell)

The liquid crystal cell includes a pair of substrates and a liquid crystal layer as a display medium sandwiched between the substrates. In a general configuration, a color filter and a black matrix are provided on one substrate, and a switching element for controlling electro-optical characteristics of liquid crystal, a scanning line for supplying a gate signal to the switching element, a signal line for supplying a source signal to the switching element, a pixel electrode, and a counter electrode are provided on the other substrate. The interval (cell gap) between the substrates can be controlled by spacers or the like. An alignment film made of polyimide, for example, may be provided on the side of the substrate in contact with the liquid crystal layer.

(polarizing plate)

The polarizing plate typically has a polarizer and protective layers disposed on both sides of the polarizer. The polarizer is typically an absorptive polarizer.

As the polarizer, any suitable polarizer is used. Examples of the film include films obtained by uniaxially stretching a hydrophilic polymer film such as a polyvinyl alcohol film, a partially formalized polyvinyl alcohol film, or an ethylene-vinyl acetate copolymer partially saponified film, by adsorbing a dichroic substance such as iodine or a dichroic dye; polyolefin-based oriented films such as dehydrated polyvinyl alcohol and desalted polyvinyl chloride. Among them, a polarizer obtained by uniaxially stretching a polyvinyl alcohol film having a dichroic material such as iodine adsorbed thereon is particularly preferable because of its high polarizing dichroic ratio.

Examples of the use of the composition of the present invention include a wavelength conversion material for a Light Emitting Diode (LED).

[LED]

The composition of the present invention can be used, for example, as a material for a light-emitting layer of an LED.

An LED including the composition of the present invention includes, for example, a configuration in which the composition of the present invention is mixed with conductive particles such as ZnS and laminated in a film form, an n-type transport layer is laminated on one surface, and a p-type transport layer is laminated on the other surface, and when a current is applied, holes of the p-type semiconductor and electrons of the n-type semiconductor cancel charges in the particles of (1) and (2) included in the composition of the junction surface, and light is emitted.

Solar cell

The composition of the present invention can be used as an electron transporting material contained in an active layer of a solar cell.

The solar cell is not particularly limited in its structure, and examples thereof include a solar cell having a fluorine-doped tin oxide (FTO) substrate, a titanium oxide dense layer, a porous alumina layer, an active layer containing the composition of the present invention, a hole transport layer such as 2,2',7,7' -tetrakis [ N, N '-di (p-methoxyphenyl) amino ] -9,9' -spirobifluorene (Spiro-MeOTAD), and a silver (Ag) electrode in this order.

The titanium oxide dense layer has an electron transport function, an effect of suppressing the roughness of the FTO, and a function of suppressing the movement of reverse electrons.

The porous alumina layer has a function of improving light absorption efficiency.

The composition of the present invention contained in the active layer has functions of charge separation and electron transport.

The technical scope of the present invention is not limited to the above-described embodiments, and various modifications may be added without departing from the scope of the present invention.