阅读说明：本技术 半导体装置 (Semiconductor device with a plurality of semiconductor chips ) 是由 若生周治 佐藤翔太 藤井健太 熊谷隆 于 2018-05-21 设计创作，主要内容包括：半导体装置(101)具备印刷基板(1)和电子零件(2)以及热扩散部(3)。电子零件(2)以及热扩散部(3)被接合到印刷基板(1)的一方的主表面(11a)上。电子零件(2)和热扩散部(3)通过接合材料(7a)电接合并且热接合。印刷基板(1)包括绝缘层(11)和从其一方的主表面(11a)贯通至另一方的主表面(11b)的多个散热用通孔(15)。多个散热用通孔(15)的至少一部分与电子零件(2)重叠,至少另一部分与热扩散部(3)重叠。多个散热用通孔(15)的至少一部分被配置成在从印刷基板(1)的另一方的主表面(11b)的透射视点与散热部(4)重叠。(A semiconductor device (101) is provided with a printed circuit board (1), an electronic component (2), and a heat diffusion section (3). The electronic component (2) and the heat diffusion section (3) are bonded to one main surface (11a) of the printed board (1). The electronic component (2) and the heat diffusion section (3) are electrically and thermally joined by a joining material (7 a). The printed board (1) comprises an insulating layer (11) and a plurality of heat dissipation through holes (15) that penetrate from one main surface (11a) to the other main surface (11 b). At least one part of the plurality of heat dissipation through holes (15) overlaps the electronic component (2), and at least another part overlaps the heat diffusion section (3). At least a part of the plurality of heat dissipation through holes (15) is arranged so as to overlap the heat dissipation portion (4) from the perspective of transmission through the other main surface (11b) of the printed circuit board (1).)

1. A semiconductor device includes:

a printed substrate; and

an electronic component and a heat diffusion section bonded to one main surface of the printed board,

the electronic part and the heat diffusion portion are electrically and thermally connected by a bonding material,

the printed substrate includes: an insulating layer; a plurality of conductor layers disposed on the main surfaces of one and the other of the insulating layers; and a plurality of heat dissipation through holes penetrating from one main surface to the other main surface of the insulating layer,

at least a part of the plurality of heat dissipating through holes overlaps the electronic component at a transmission point of view from one main surface of the printed board, and at least another part of the plurality of heat dissipating through holes overlaps the heat diffusion portion at a transmission point of view from one main surface of the printed board,

at least a part of the plurality of heat dissipation through holes is arranged so as to overlap a heat dissipation portion in a transmission viewpoint from the other main surface of the printed substrate.

2. The semiconductor device according to claim 1,

a convex portion is disposed on one main surface of the printed board,

the electronic component and the heat diffusion portion are arranged so as to overlap the convex portion at a transmission point of view from one main surface of the printed board.

3. The semiconductor device according to claim 1,

the bonding material is disposed in an amount equal to or greater than 1/3 by volume of the volume of at least a part of the plurality of heat dissipation through holes that overlap the electronic component or the heat diffusion portion with the plurality of conductor layers interposed therebetween.

4. The semiconductor device according to any one of claims 1 to 3,

the heat diffusion section includes:

a 1 st portion extending in a direction along one main surface of the printed substrate and bonded to the one main surface of the printed substrate; and

and a 2 nd portion extending in a direction intersecting the 1 st portion.

5. The semiconductor device according to any one of claims 1 to 4,

the heat diffusion portion is bonded to both of at least a part of a 3 rd portion of the electronic component extending in a direction along the one main surface and at least a part of a 4 th portion of the electronic component extending in a direction intersecting the one main surface via the bonding material.

6. The semiconductor device according to any one of claims 1 to 5,

a part of the heat diffusion portion is disposed so as to cover a 2 nd surface of the electronic component on a side opposite to a 1 st surface facing one main surface of the printed substrate.

7. The semiconductor device according to any one of claims 1 to 6,

the printed substrate includes a plurality of the insulating layers,

each of the plurality of insulating layers includes inorganic filler particles.

8. The semiconductor device according to any one of claims 1 to 7,

the printed circuit board is provided with a groove for connecting the heat dissipation through holes adjacent to each other from a perspective of one main surface of the printed circuit board.

9. The semiconductor device according to any one of claims 1 to 8,

the heat diffusion sections are disposed in a plurality around the electronic component from a perspective of transmission through one main surface of the printed circuit board.

10. The semiconductor device according to any one of claims 1 to 8,

a plurality of electronic components are arranged at intervals from a transmission viewpoint of one main surface of the printed board,

the single heat diffusion portion is disposed around each of the plurality of electronic components.

11. The semiconductor device according to any one of claims 1 to 10,

the heat diffusion portion has a higher bending rigidity than the printed substrate.

12. The semiconductor device according to any one of claims 1 to 11,

at least a part of the electronic component and the heat diffusion portion is covered with a heat diffusion material.

Technical Field

The present invention relates to a semiconductor device, and more particularly, to a semiconductor device having excellent heat dissipation properties with respect to heat generated from electronic components.

Background

There are electronic circuits, power supply devices, and drive circuits such as motors using semiconductors used in vehicles (automobiles and industrial construction machines), vehicles (railway vehicles), industrial devices (processing machines, robots, and industrial inverters), and household electronic devices, and these are collectively referred to as semiconductor devices hereinafter. In a semiconductor device, there is a strong demand for higher output, thinner, and smaller size. Along with this, the amount of heat generated per unit volume of electronic components mounted on the semiconductor device has increased significantly, and there is a strong demand for a semiconductor device capable of realizing high heat dissipation.

For example, japanese patent laid-open nos. 6-77679 (patent document 1) and 11-345921 (patent document 2) disclose semiconductor devices that dissipate heat generated from electronic components. In these patent documents, an electronic component is bonded to the upper side of a printed circuit board, and a heat sink is bonded to the lower side. The printed circuit board has a heat conduction path formed so as to penetrate from one main surface to the other main surface. The heat generated from the electronic component is transferred to the heat sink through the heat conduction channel, and can be dissipated from the heat sink to the outside.

Disclosure of Invention

In the device of jp-a-6-77679, the heat conduction path is provided only in a portion of the printed circuit board that is away from the electronic component and directly below the electronic component, and in jp-a-11-345921, the hole portion for heat conduction is provided only directly below the electronic component in the printed circuit board. Therefore, the area of the region capable of transferring heat is small in any printed circuit board, and the amount of heat that can be transferred from the electronic component is small, so that the heat dissipation from the electronic component to the region of the heat sink below the electronic component is insufficient. Further, the fastening plate of the device of japanese patent application laid-open No. 6-77679 is fixed to the printed circuit board only by the jig, and an air layer is generated between the printed circuit board and the heat sink, and there is a possibility that the heat radiation property between the printed circuit board and the heat sink is insufficient.

The present invention has been made in view of the above problems, and an object thereof is to provide a semiconductor device capable of radially diffusing heat around an electronic component and further improving heat dissipation from the electronic component.

A semiconductor device of the present invention includes a printed circuit board, an electronic component, and a heat diffusion portion. The electronic component and the heat diffusion portion are bonded to one main surface of the printed board. The electronic part and the heat diffusion portion are electrically and thermally joined by a joining material. The printed circuit board includes an insulating layer and a plurality of heat dissipation through holes penetrating from one main surface to the other main surface. At least a part of the plurality of heat dissipation through holes overlaps the electronic component, and at least another part overlaps the heat diffusion portion. At least a part of the plurality of heat dissipation through holes is arranged so as to overlap the heat dissipation portion in a transmission viewpoint from the other main surface of the printed substrate.

According to the present invention, heat can be radially diffused around the electronic component, and also can be radiated directly below the electronic component. Therefore, a semiconductor device capable of further improving heat dissipation with respect to heat generated from electronic components can be provided.

Drawings

Fig. 1 is a schematic plan view of a semiconductor device according to example 1 of embodiment 1.

Fig. 2 is a schematic sectional view of a semiconductor device according to example 1 of embodiment 1.

Fig. 3 is a schematic plan view of the printed circuit board before electronic components and heat diffusion portions are mounted in example 1 of embodiment 1.

Fig. 4 is a schematic plan view of a semiconductor device according to example 2 of embodiment 1.

Fig. 5 is a schematic sectional view of a semiconductor device according to example 2 of embodiment 1.

Fig. 6 is a schematic cross-sectional view showing a step 1 of the method for manufacturing a semiconductor device according to embodiment 1 of embodiment 1.

Fig. 7 is a schematic cross-sectional view showing a 2 nd step of the method for manufacturing a semiconductor device according to embodiment 1 of the present invention.

Fig. 8 is a schematic cross-sectional view showing a 3 rd step of the method for manufacturing a semiconductor device according to embodiment 1 of embodiment 1.

Fig. 9 is a schematic plan view showing a heat transfer path from an electronic component in embodiment 1.

Fig. 10 is a schematic sectional view showing a heat transfer path from an electronic component in embodiment 1.

Fig. 11 is a graph comparing thermal resistance values in the semiconductor devices of embodiment 1 and the comparative example.

Fig. 12 is a schematic plan view showing the dimensions of each part of a model of the semiconductor device according to embodiment 1, which is used for deriving the graph of fig. 11.

Fig. 13 is a schematic plan view showing a model of the semiconductor device according to embodiment 1 used for deriving the graph of fig. 11.

Fig. 14 is a graph showing a relationship between a distance from an edge portion of an electronic component to an outermost heat dissipation through hole joined to a heat diffusion plate and a thermal resistance of the semiconductor device.

FIG. 15 is a schematic plan view of the semiconductor device according to each of embodiments 2 to 5.

Fig. 16 is a schematic sectional view of a semiconductor device according to embodiment 2.

Fig. 17 is a schematic sectional view of a semiconductor device according to embodiment 3.

Fig. 18 is a schematic sectional view showing a step 1 of the method for manufacturing a semiconductor device according to embodiment 3.

Fig. 19 is a schematic sectional view showing the 2 nd step of the method for manufacturing a semiconductor device according to embodiment 3.

Fig. 20 is a schematic sectional view showing the 3 rd step of the method for manufacturing a semiconductor device according to embodiment 3.

Fig. 21 is a schematic sectional view showing the 4 th step of the method for manufacturing a semiconductor device according to embodiment 3.

Fig. 22 is a schematic cross-sectional view of a portion of the semiconductor device according to embodiment 4, taken along the line a-a in fig. 15.

Fig. 23 is a schematic cross-sectional view of a portion of the semiconductor device according to embodiment 4, taken along the line B-B in fig. 15.

Fig. 24 is a schematic sectional view of a semiconductor device according to embodiment 1 of embodiment 5.

Fig. 25 is a schematic sectional view of a semiconductor device according to example 2 of embodiment 5.

Fig. 26 is a schematic enlarged cross-sectional view showing a more preferred embodiment of a region XXVI surrounded by a broken line in fig. 24.

Fig. 27 is a schematic plan view of the semiconductor device according to each example of embodiment 6.

Fig. 28 is a schematic sectional view of a semiconductor device according to embodiment 1 of embodiment 6.

Fig. 29 is a schematic sectional view of a semiconductor device according to embodiment 2 of embodiment 6.

Fig. 30 is a schematic enlarged cross-sectional view of a part of the semiconductor device according to embodiment 7.

Fig. 31 is a schematic enlarged cross-sectional view showing a mode of an area XXXI surrounded by a broken line in fig. 30.

Fig. 32 is a schematic enlarged plan view showing a part of the semiconductor device according to embodiment 8 in an enlarged manner.

Fig. 33 is a schematic enlarged cross-sectional view of a part of the semiconductor device according to embodiment 8.

Fig. 34 is a schematic plan view of the semiconductor device according to embodiment 9.

Fig. 35 is a schematic sectional view of a semiconductor device according to embodiment 1 of embodiment 10.

Fig. 36 is a schematic sectional view of a semiconductor device according to example 2 of embodiment 10.

Fig. 37 is a schematic cross-sectional view of a semiconductor device according to a comparative example of example 1 of embodiment 10.

Fig. 38 is a schematic cross-sectional view of a semiconductor device according to a comparative example of example 2 of embodiment 10.

Fig. 39 is a schematic sectional view of a semiconductor device according to embodiment 1 of embodiment 11.

Fig. 40 is a schematic sectional view of a semiconductor device according to embodiment 2 of embodiment 11.

Fig. 41 is a schematic sectional view of a semiconductor device according to example 3 of embodiment 11.

Fig. 42 is a schematic sectional view of a semiconductor device according to embodiment 11, example 4.

Fig. 43 is a schematic plan view of a semiconductor device according to each example of embodiment 12.

Fig. 44 is a schematic sectional view of a semiconductor device according to embodiment 1 of embodiment 12.

Fig. 45 is a schematic sectional view of a semiconductor device according to embodiment 12, example 2.

(symbol description)

1: a printed substrate; 1A: an area; 2: an electronic component; 3: a heat diffusion section; 4: a heat dissipating section; 51: a frame body; 6 a: solder paste; 6 b: a solder plate; 6 c: a heat-resistant belt; 7a, 7 b: a bonding material; 8: a convex portion; 11: an insulating layer; 11 a: one main surface; 11 b: the other main surface; 12: an upper side conductor layer; 13: a lower side conductor layer; 14: an internal conductor layer; 15: a through hole for heat dissipation; 15 a: 1 st heat dissipating through-hole; 15 b: the 2 nd heat dissipation through hole; 15 c: a conductor film; 15 d: a groove; 16: a filler; 17: glass fibers; 18: an epoxy resin; 21: a lead terminal; 22: a semiconductor chip; 23: a resin molding part; 23 e: downward toward the molding face; 23 f: upward toward the molding surface; 23 g: molding the side; 24: a heat dissipation plate; 24 c: a horizontally extending portion; 24 d: a vertically extending portion; 31. 31x, 31y, 31 z: a heat diffusion plate; 31 a: 1 st heat diffusion plate portion; 31 b: a 2 nd heat diffusion plate portion; 31 c: a 3 rd heat diffusion plate portion; 31 d: a 4 th heat diffusion plate portion; 31 f: a 5 th heat diffusion plate portion; 31 g: a 6 th heat diffusion plate portion; 41. 52: a heat dissipating member; 42: a cooling body; 60: a thermal diffusion material; 71: bulk solder; 101. 102, 201, 301, 401, 501, 502, 601, 602, 701, 801, 901, 1001, 1002, 1101, 1102, 1103, 1104, 1201, 1202: a semiconductor device; h1, H2: and (4) heating.

Detailed Description

Hereinafter, one embodiment will be described with reference to the drawings.