阅读说明：本技术 位移测定系统 (Displacement measuring system ) 是由 高桥美枝 岛田佳幾 福田一人 于 2021-04-25 设计创作，主要内容包括：本发明提供一种位移测定系统,具备：传感器部,被设置为能够与被测定物接触,包含具有至少一维的扩展宽度的第1间隔件、和遍及第1间隔件的所述扩展宽度而分布并且通过激发能量发光的波长不同的两种以上的发光粒子；激发能量源,使传感器部包含的两种以上的发光粒子发光；以及受光部,对来自传感器部的发光进行受光。(The present invention provides a displacement measurement system, comprising: a sensor unit that is provided so as to be capable of contacting an object to be measured, and that includes a 1 st spacer having an expanded width of at least one dimension, and two or more kinds of light-emitting particles that are distributed over the expanded width of the 1 st spacer and emit light by excitation energy at different wavelengths; an excitation energy source that emits light from two or more types of light-emitting particles included in the sensor unit; and a light receiving unit for receiving the light emitted from the sensor unit.)

1. A displacement measurement system is provided with:

a sensor portion provided so as to be capable of contacting an object to be measured, the sensor portion including: a 1 st spacer having an expanded width of at least one dimension, and two or more kinds of light-emitting particles which are distributed throughout the expanded width of the 1 st spacer and emit light by excitation energy at different wavelengths;

an excitation energy source that emits light from the two or more types of light-emitting particles included in the sensor unit; and

and a light receiving unit for receiving the light emitted from the sensor unit.

2. The displacement measuring system according to claim 1,

the emission spectrum of one of the two or more types of light-emitting particles overlaps with the excitation spectrum of the other type of light-emitting particle.

3. The displacement measuring system according to claim 1 or 2,

at least one of semiconductor nanoparticles and organic pigments is used as the two or more kinds of light-emitting particles.

4. The displacement measuring system according to any one of claims 1 to 3,

the displacement measurement system further includes: and an image analyzing unit for measuring a displacement of the object in contact with the sensor unit based on the wavelength distribution of the emitted light obtained by receiving the light.

5. A displacement measurement system is provided with:

a sensor portion provided so as to be capable of contacting an object to be measured, the sensor portion including: a 1 st light-emitting particle layer in which 1 st light-emitting particles that emit light at a 1 st wavelength by excitation energy are distributed over an expansion width in at least one dimension, a 2 nd light-emitting particle layer in which 2 nd light-emitting particles that emit light at a 2 nd wavelength different from the 1 st wavelength by excitation energy are distributed over the expansion width, and a 2 nd spacer layer that separates the 1 st light-emitting particle layer from the 2 nd light-emitting particle layer in a direction intersecting the expansion width;

an excitation energy source that causes the 1 st light-emitting particle and the 2 nd light-emitting particle included in the sensor portion to emit light;

a light receiving unit that receives light emitted from the sensor unit; and

and an image analyzing unit for measuring a displacement of the object in contact with the sensor unit based on the wavelength distribution of the emitted light obtained by receiving the light.

6. The displacement measuring system according to claim 5,

the emission spectrum of one of the 1 st and 2 nd light-emitting particles has an overlap with the absorption spectrum of the other light-emitting particle.

7. The displacement measuring system according to claim 5 or 6,

at least one of semiconductor nanoparticles and organic pigments is used as the 1 st light-emitting particle and the 2 nd light-emitting particle.

8. The displacement measuring system according to any one of claims 1 to 7,

the excitation energy is at least one of optical energy and electric energy.

9. A pressure measurement system using the displacement measurement system according to any one of claims 1 to 8.

Technical Field

The present invention relates to a displacement measuring system, and more particularly to a displacement measuring system for measuring minute displacement and pressure.

Background

Conventionally, as a system for measuring displacement or pressure, a system in which a plurality of thin film transistors are combined with a pressure-sensitive resin is known.

The pressure-sensitive resin is a resin in which conductive particles are dispersed in an insulating resin such as silicone rubber, and when pressure is applied to the pressure-sensitive resin, the conductive particles come into contact with each other in the insulating resin, whereby the resistance value is lowered. Thereby, the pressure applied to the pressure-sensitive resin can be detected. The plurality of thin film transistors are arranged in a matrix and function as electrodes.

Further, a pressure sensor is known in which a pressure sensitive layer and a plurality of electrodes are arranged to face each other with a predetermined gap therebetween (see, for example, patent document 1). For example, in the technique described in patent document 1, the pressure measurement range is expanded by arranging the individual electrodes having different gaps between the pressure-sensitive layer and the electrodes in a matrix, and a large-area measurement can be performed.

Prior art documents

Patent document

Patent document 1: japanese patent No. 6322247

Disclosure of Invention

A displacement measurement system according to an aspect of the present invention includes:

a sensor portion provided so as to be capable of contacting an object to be measured, the sensor portion including: a 1 st spacer having an expanded width of at least one dimension, and two kinds of light-emitting particles which are distributed throughout the expanded width of the 1 st spacer and emit light by excitation energy with different wavelengths;

an excitation energy source that causes the two types of light-emitting particles included in the sensor portion to emit light; and

and a light receiving unit for receiving the light emitted from the sensor unit.

A displacement measurement system according to an aspect of the present invention includes:

a sensor unit provided so as to be capable of contacting an object to be measured, the sensor unit including: a 1 st light-emitting particle layer in which 1 st light-emitting particles that emit light at a 1 st wavelength by excitation energy are distributed over an expansion width in at least one dimension, a 2 nd light-emitting particle layer in which 2 nd light-emitting particles that emit light at a 2 nd wavelength different from the 1 st wavelength by excitation energy are distributed over the expansion width, and a 2 nd spacer layer that separates the 1 st light-emitting particle layer from the 2 nd light-emitting particle layer in a direction intersecting the expansion width;

an excitation energy source that causes the 1 st light-emitting particle and the 2 nd light-emitting particle included in the sensor portion to emit light;

a light receiving unit that receives light emitted from the sensor unit; and

and an image analyzing unit for measuring a displacement of the object in contact with the sensor unit based on the wavelength distribution of the emitted light obtained by receiving the light.

Drawings

Fig. 1 is a schematic diagram showing the configuration of a displacement measurement system according to embodiment 1.

Fig. 2 is a schematic diagram showing the configuration of modification 1 of the displacement measurement system according to embodiment 1.

Fig. 3 is a schematic diagram showing the configuration of modification 2 of the displacement measurement system according to embodiment 1.

Fig. 4 is a schematic diagram showing the configuration of the displacement measurement system according to embodiment 2.

Fig. 5 is a schematic diagram showing the configuration of modification 3 of the displacement measurement system according to embodiment 2.

Description of the reference numerals

10. 10a, 10b, 10c, 10 d: a displacement measuring system;

11: a 1 st luminescent particle layer;

12: a 2 nd luminescent particle layer;

100: an excitation energy source;

200: a sensor section;

211: luminescent particles, 1 st luminescent particle;

212: 1 st spacer;

212 a: a 2 nd spacer layer;

213: luminescent particles, No. 2 luminescent particles;

214: luminescent particles, No. 2 luminescent particles;

220: a support;

230: an anode substrate;

240: a cathode substrate;

300: a light emitting and receiving element;

400: an image analysis unit.

Detailed Description

In the above-described conventional configuration, since the individual electrodes having different gaps are arranged, a constant pressing region is required, and it is difficult to measure a minute region. Further, since the independent electrodes are arranged, there is a problem that a circuit becomes complicated for measuring a sample having a wide measurement area.

The present invention has been made to solve the above conventional problems, and an object thereof is to provide a displacement or pressure measurement system capable of easily evaluating displacement measurement or pressure measurement in a micro area.

A displacement measurement system according to claim 1 includes:

a sensor portion provided so as to be capable of coming into contact with an object to be measured, the sensor portion including: a 1 st spacer having an expanded width of at least one dimension, and two or more kinds of light-emitting particles which are distributed throughout the expanded width of the 1 st spacer and emit light by excitation energy at different wavelengths;

an excitation energy source that emits light from the two or more types of light-emitting particles included in the sensor unit; and

and a light receiving unit for receiving the light emitted from the sensor unit.

According to the above configuration, the displacement or the pressure in the minute area can be measured.

The displacement measurement system according to aspect 2 may be such that, in aspect 1, an emission spectrum of one of the two or more types of light-emitting particles overlaps with an excitation spectrum of another type of light-emitting particle.

The displacement measurement system according to aspect 3 may use at least one of semiconductor nanoparticles and organic pigments as the two or more types of light-emitting particles in the above-described aspect 1 or 2.

The displacement measurement system according to claim 4 may further include, in any one of the above-described aspects 1 to 3: and an image analyzing unit for measuring a displacement of the object in contact with the sensor unit based on the wavelength distribution of the emitted light obtained by receiving the light.

The displacement measurement system according to claim 5 includes:

a sensor portion provided so as to be capable of contacting an object to be measured, the sensor portion including: a 1 st light-emitting particle layer in which 1 st light-emitting particles that emit light at a 1 st wavelength by excitation energy are distributed over an expansion width in at least one dimension, a 2 nd light-emitting particle layer in which 2 nd light-emitting particles that emit light at a 2 nd wavelength different from the 1 st wavelength by excitation energy are distributed over the expansion width, and a 2 nd spacer layer that separates the 1 st light-emitting particle layer from the 2 nd light-emitting particle layer in a direction intersecting the expansion width;

an excitation energy source that causes the 1 st light-emitting particle and the 2 nd light-emitting particle included in the sensor portion to emit light;

a light receiving unit that receives light emitted from the sensor unit; and

and an image analyzing unit for measuring a displacement of the object in contact with the sensor unit based on the wavelength distribution of the emitted light obtained by receiving the light.

In the displacement measurement system according to claim 6, in the above-mentioned 5, an emission spectrum of one of the 1 st light-emitting particle and the 2 nd light-emitting particle may overlap an absorption spectrum of the other light-emitting particle.

The displacement measurement system according to claim 7 may use at least one of semiconductor nanoparticles and organic pigments as the 1 st light-emitting particle and the 2 nd light-emitting particle in the 5 th or 6 th aspect.

The displacement measurement system according to claim 8 may be configured such that, in any one of the above-described aspects 1 to 7, the excitation energy is at least one of optical energy and electrical energy.

The pressure measurement system according to claim 9 uses the displacement measurement system according to any one of the above-described 1 to 8.

Hereinafter, a displacement measurement system according to an embodiment will be described with reference to the drawings. In the drawings, substantially the same members are denoted by the same reference numerals.

(embodiment mode 1)

Fig. 1 is a schematic diagram showing the configuration of a displacement measurement system 10 according to embodiment 1. For convenience, the drawings show the plane of the expanded width in the plane of the sensor unit 200 as an X-Y plane, the right side of the drawing as an X direction, and the vertically upward direction as a Z direction.

In fig. 1, the displacement measurement system 10 includes an excitation energy source 100, a sensor unit 200, a light-emitting/receiving element 300, and an image analysis unit 400. The sensor portion 200 is provided so as to be capable of contacting an object to be measured, and includes a 1 st spacer 212 having an expanded width of at least one dimension, and two or more kinds of light-emitting particles 211, 213 that are distributed over the expanded width of the 1 st spacer 212 and emit light by excitation energy at different wavelengths. The excitation energy source 100 causes the two or more types of light-emitting particles 211, 213 included in the sensor unit 200 to emit light. The light-emitting and light-receiving element 300 receives light emitted from the sensor unit 200.

According to the displacement measurement system 10, the sensor unit 200 includes two or more types of light-emitting particles 211 and 213 that emit light with different wavelengths and are distributed over an extended width in at least one dimension. Therefore, a change in the distance between two or more types of light-emitting particles 211 and 213 can be detected from the wavelength distribution of the emitted light, and the displacement or pressure in the minute region can be measured.

Further, the sensor unit 200 may be supported by the support 220.

Hereinafter, each member constituting the displacement measurement system 10 will be described.

< sensor part >

The sensor portion 200 is provided so as to be able to contact an object to be measured. The sensor unit 200 includes a 1 st spacer 212 having an expanded width of at least one dimension, and two or more kinds of light-emitting particles 211 and 213 that are distributed over the expanded width of the 1 st spacer 212 and emit light by excitation energy at different wavelengths.

The thickness of the sensor section 200 is preferably 1nm or more and 100000nm or less. More preferably 1nm or more and 50000nm or less, and still more preferably 3nm or more and 10000nm or less. When the thickness is thinner than 1nm, the change in the distance between the light-emitting particles 211 and 213 required for the sensor cannot be ensured. If the thickness is larger than 100000nm (100 μm), a change in distance between particles due to displacement of the object to be measured in contact with the sensor is less likely to occur over the entire sensor portion, and the sensor cannot function as a sensor.

< 1 st spacer >

The 1 st spacer 212 has an expanded width of at least one dimension. In fig. 1, the 1 st spacer 212 has an expanded width in two dimensions. In addition, the 1 st spacer 212 has light emitting particles 211 and 213 dispersed therein.

The 1 st spacer is not particularly limited as long as it is a material that is compressed by pressure and does not inhibit light emission from the light-emitting particles 211 and 213. For example, silicone resin, polyvinyl chloride, polyurethane, polyvinyl alcohol, polypropylene, polyacrylamide, polycarbonate, polyethylene terephthalate, or the like can be used.

The thickness of the 1 st spacer 212 is substantially the same as the thickness of the sensor section 200, and is preferably 1nm or more and 100000nm or less. More preferably 1nm or more and 50000nm or less, and still more preferably 3nm or more and 10000nm or less.

< light-emitting particle >

The light-emitting particles 211 and 213 include two or more types of light-emitting particles 211 and 213 that emit light with different wavelengths by excitation energy.

As the light-emitting particles 211 and 213, semiconductor nanoparticles having a core of cadmium sulfide, cadmium selenide, cadmium telluride, zinc sulfide, zinc selenide, zinc telluride, copper indium sulfide, silver indium sulfide, indium phosphide, or the like, perovskite-type semiconductor nanoparticles such as cesium lead halide, semiconductor nanoparticles having a core of silicon, carbon, or the like, organic pigments such as merocyanine, perylene, or the like, and the like can be used.

The particle sizes of the two or more types of light-emitting particles 211 and 213 may be any particle size that can provide quantum size effect to the semiconductor nanoparticles, and are preferably 1nm or more and 100nm or less. More preferably 1nm or more and 50nm or less. The organic pigment is not affected by the particle size of the raw material powder even when the raw material powder is in a powdery form.

The two or more kinds of light-emitting particles 211 and 213 are substantially uniformly dispersed in the 1 st spacer 212 over an at least one-dimensional spread width. In fig. 1, are substantially uniformly distributed throughout two dimensions.

< support >

The support 220 is not particularly limited as long as it is a material which is easy to handle and does not inhibit light emission from the light-emitting particles 211 and 213. For example, polyethylene terephthalate, polyacrylamide, polycarbonate, and the like can be used. However, if there is no problem in the operation of the sensor section 200, the support body 220 is not necessarily a necessary structure.

< excitation energy Source >

The excitation energy source 100 is not particularly limited if it is an excitation energy source capable of exciting the light-emitting particles 211 and 213 included in the sensor unit 200. For example, a light energy source or an electric energy source can be used. In order to evaluate the observation range at once, it is necessary to uniformly supply excitation energy to the light-emitting particles 211 and 213 by the excitation energy source 100.

< light emitting/receiving element >

The light-emitting and light-receiving element 300 is not particularly limited as long as it can receive light from the light-emitting particles 211 and 213 that change their light-emitting behavior. For example, a CCD, a CMOS, an image sensor, or the like, which can collectively evaluate the observation range, can be used. By using these, the light emission behavior in the observation range can be instantaneously analyzed.

When an optical energy source is used as the excitation energy source, it is preferable to use a wavelength cut filter to suppress the influence of the wavelength of the excitation energy source 100 in order to improve the detection sensitivity of the light-emitting and light-receiving element 300.

< image analysis section >

Further, the image analysis unit 400 may be further provided to measure the displacement of the object to be measured in contact with the sensor unit 200 based on the wavelength distribution of the light emission. Preferably, the image analysis unit 400 analyzes the obtained image by using the chromaticity and the luminance, and can calculate the coordinates at which the chromaticity difference and the luminance difference from the surroundings can be obtained. The image analysis unit 400 measures the displacement of the object in contact with the sensor unit 200 based on the wavelength distribution of the received light emission. Specifically, by the obtained wavelength distribution of the emitted light, a change in the distance between the two types of light-emitting particles 211 and 213 can be detected, and the displacement or pressure in the micro region can be measured. The details of the principle of displacement measurement will be described later.

In addition, in the displacement measurement system 10, the excitation energy source 100 and the light emitting and receiving element 300 are arranged in an oblique direction with respect to the plane of the sensor unit 200, but the above arrangement is an example, and the arrangement is not particularly limited.

Next, the principle of displacement measurement in the displacement measurement system according to embodiment 1 will be described.

As two or more types of light-emitting particles that emit light at different wavelengths, a case is considered in which the fluorescence spectrum (emission spectrum) of one light-emitting particle (donor)) overlaps with the excitation spectrum (absorption spectrum) of the other light-emitting particle (acceptor)). In this case, the following behavior is known: when two light-emitting particles emitting light at different wavelengths are close to each other, the acceptor is excited by the excitation energy before the donor excited by the excitation energy emits light. This behavior is called Forster Resonance Energy Transfer (FRET), and the behavior of the wavelength distribution of the emission spectra of two light-emitting particles depends on the distance between the two light-emitting particles. In particular, when the FRET efficiency is a ratio of the number of energy transfer per number of donor excitations, the FRET efficiency is inversely proportional to the 6 th power of the distance between two luminescent particles. Therefore, even a slight change in distance has a large influence on the change in the emission spectrum.

In the displacement measurement system 10, the sensor unit 200 is provided on the object to be measured by utilizing the above-described principle, and when a constant load is applied to the object to be measured, the load applied to the sensor unit 200 is different only at the uneven portion from other portions when the object to be measured has minute unevenness. Thus, the compression amount of the corresponding portion of the sensor portion 200 changes in the uneven portion of the object to be measured as compared with other portions, that is, the distance between the two types of light-emitting particles changes only in the uneven portion. According to the change in the distance between two kinds of light-emitting particles, the light emission spectrum changes according to the FRET effect. Therefore, by measuring the emission spectra of the two types of light-emitting particles, the change in the emission spectra generated in the in-plane concave-convex portion can be converted into a change in the distance between the two types of light-emitting particles, that is, a displacement of the object to be measured.

Further, the model to be a reference may be measured before the object to be measured is measured, and the relationship between the minute concave-convex portion and the displacement may be measured based on a difference between the measurement based on the object to be measured and the measurement based on the model to be a reference.

However, in order to calculate the amount of displacement, it is necessary to measure the change in the emission spectrum in advance using known materials with different displacements.

In fig. 1, the two types of light-emitting particles 211 and 213 are shown as being uniformly arranged on the 1 st spacer 212, but in reality, the distances between the two types of light-emitting particles are not uniform, and it can be considered that the light-emitting particles are ideally normally distributed with the average distance as the center. Therefore, the emission spectrum change has a broad distribution depending on the distance between the light-emitting particles.

Here, a case where semiconductor nanoparticles are used as both donors and acceptors of two or more types of light-emitting particles will be described. Semiconductor nanoparticles are nano-sized particles having a semiconductor crystal, and have a characteristic that an emission spectrum changes according to a particle diameter by a quantum size effect. Further, the particles have a characteristic that the emission spectrum changes if the material is different even if the particle diameter is the same, and various emission spectra can be realized.

In addition, in the case where the light-emitting particles have the same particle diameter and different material systems, the material itself has a larger energy gap and emits light on the short wavelength side. The semiconductor nanoparticles having an emission wavelength on the short wavelength side are referred to as semiconductor nanoparticles A, and the semiconductor nanoparticles having an emission wavelength on the long wavelength side are referred to as semiconductor nanoparticles B. In a state where the distance between the two semiconductor nanoparticles is sufficiently separated, the semiconductor nanoparticle a and the semiconductor nanoparticle B exhibit respective emission spectra. When the distance between the semiconductor nanoparticles is close to each other by the object to be measured, the semiconductor nanoparticles A, B are excited by the distance, energy transfer from the semiconductor nanoparticles a to the semiconductor nanoparticles B occurs before the semiconductor nanoparticles a emit light, and the energy to be emitted from the semiconductor nanoparticles a is used for the emission of the semiconductor nanoparticles B. As a result, the emission spectrum intensity of the semiconductor nanoparticle a decreases, and the emission spectrum of the semiconductor nanoparticle B increases. That is, the two semiconductor nanoparticles have the following wavelength distributions in the emission spectra as a whole: the emission spectrum intensity of the semiconductor nanoparticles A on the short wavelength side is lower than that of the single semiconductor nanoparticles A, and the emission spectrum intensity of the semiconductor nanoparticles B on the long wavelength side is higher than that of the single semiconductor nanoparticles B. The behavior of the wavelength distribution in the entire light emission spectrum varies depending on the distance between the two semiconductor nanoparticles A, B.

Therefore, the change in the distance between the two types of semiconductor nanoparticles A, B, that is, the displacement of the object to be measured can be calculated from the wavelength distribution of the emission spectrum in the plane of the sensor portion.

Further, the pressure applied from the object to be measured may be calculated from the wavelength distribution of the emission spectrum in the plane of the sensor portion instead of the displacement of the object to be measured.

(modification 1)

Fig. 2 is a schematic diagram showing the configuration of modification 1 of the displacement measurement system according to embodiment 1.

The displacement measurement system 10a according to modification 1 is different from the displacement measurement system according to embodiment 1 in that the two types of light-emitting particles 211 and 214 are made of the same material and have different particle diameters. When the particles have the same material and different diameters, the smaller particle diameter exhibits light emission on the short wavelength side by the quantum size effect. In fig. 2, the light-emitting particle 211 having a small particle diameter has an emission wavelength on the short wavelength side, and the light-emitting particle 214 having a large particle diameter has an emission wavelength on the long wavelength side. When semiconductor nanoparticles are used as the light-emitting particles, the light-emitting particles 211 having a small particle diameter correspond to the semiconductor nanoparticles a on the short wavelength side, and the light-emitting particles 214 having a large particle diameter correspond to the semiconductor nanoparticles B on the long wavelength side. As described above, energy transfer occurs according to the particle-to-particle distance between the semiconductor nanoparticle a on the short wavelength side and the semiconductor nanoparticle B on the long wavelength side, and the wavelength distribution of the emission spectrum changes.

Therefore, the change in the distance between the two types of semiconductor nanoparticles A, B, that is, the displacement of the object to be measured can be calculated from the wavelength distribution of the emission spectrum in the plane of the sensor portion.

In addition, even when an organic dye is used for the light-emitting particles, the displacement of the object to be measured can be detected by the same principle.

As described above, when the FRET phenomenon occurs, the emission spectrum of the light-emitting particle or dye molecule emitting light on the short wavelength side decreases, and the emission spectrum of the light-emitting particle or dye molecule emitting light on the long wavelength side increases. The emission peak wavelength on the short wavelength side and the emission peak wavelength on the long wavelength side are preferably separated by 10nm or more. More preferably 30nm or more. When the emission peak wavelength is closer than 10nm, the emission peak intensity of a spectrum having a low emission intensity overlaps with the other spectrum, and it becomes difficult to detect a change in the wavelength distribution in the emission spectrum.

In order to detect a slight change in the wavelength distribution in the emission spectrum, the distance between the two types of light-emitting particles needs to be constant, and high-concentration uniform dispersion is required when dispersing the two types of light-emitting particles into the resin material constituting the 1 st spacer 212.

(modification 2)

Fig. 3 is a schematic diagram showing the configuration of modification 2 of the displacement measurement system according to embodiment 1.

A displacement measurement system according to modification example 2 is different from the displacement measurement system according to embodiment 1 in that the electric energy source 110 is used as an excitation energy source.

As shown in fig. 3, when the electric energy source 110 is used, for example, electric energy can be applied by sandwiching the sensor unit 200 between the anode substrate 230 and the cathode substrate 240 and applying a voltage to the sensor unit 200. In this case, the sensor unit 200 can be stacked on the anode substrate 230, and the cathode substrate 240 can be stacked thereon.

The anode substrate 230 is preferably a substrate that does not block light emission from the light-emitting particles 211 and 213, and ITO or the like can be used, for example. In addition, aluminum or the like can be used for the cathode substrate 240.

The structure of the sensor unit 200 can be the structure of embodiment 1 and modification 1, and therefore, the description thereof is omitted.

(embodiment mode 2)

Fig. 4 is a schematic diagram showing the configuration of the displacement measurement system according to embodiment 2. In fig. 4, the same reference numerals are used for the same components as those in fig. 1, and the description thereof is omitted.

The displacement measurement system 10c according to embodiment 2 is different from the displacement measurement system according to embodiment 1 in that two types of the 1 st luminescent particle 211 and the 2 nd luminescent particle 213 constitute the 1 st luminescent particle layer 11 and the 2 nd luminescent particle layer 12, respectively.

As shown in fig. 2, the displacement measurement system 10c includes an excitation energy source 100, a sensor unit 200, a light-emitting/receiving element 300, and an image analysis unit 400. The sensor portion 200 is provided so as to be able to contact an object to be measured. The sensor portion 200 includes a 1 st luminescent particle layer 11, a 2 nd spacer layer 212a, and a 2 nd luminescent particle layer 12. In the 1 st luminescent particle layer 11, the 1 st luminescent particles 211 emitting light at the 1 st wavelength by excitation energy are distributed over an extended width in at least one dimension. In the 2 nd luminescent particle layer 12, the 2 nd luminescent particles 213 emitting light at the 2 nd wavelength different from the 1 st wavelength by excitation energy are distributed over the extended width. The 1 st light emitting particle layer 11 and the 2 nd light emitting particle layer 12 are separated from each other in a direction intersecting the extended width by the 2 nd spacer layer 212 a. The excitation energy source 100 causes the 1 st and 2 nd light-emitting particles 211 and 213 included in the sensor unit 200 to emit light. The light emitting and receiving element 300 receives light emitted from the sensor unit. Further, the image analysis unit 400 measures the displacement of the object to be measured in contact with the sensor unit 200 from the wavelength distribution of the light emission obtained by receiving the light.

In embodiment 2, the excitation energy source 100, the light-emitting/receiving element 300, and the image analyzing unit 400 are the same components as those in embodiment 1, and therefore, description thereof is omitted.

The sensor unit according to embodiment 2 includes: a 1 st light-emitting particle layer 11 containing 1 st light-emitting particles 211 emitting light at a 1 st wavelength, a 2 nd light-emitting particle layer 12 containing 2 nd light-emitting particles 211 emitting light at a 2 nd wavelength, a 2 nd spacer layer 212a, and a support 220. As a layer structure, the 1 st luminescent particle layer 11 and the 2 nd luminescent particle layer 12 are arranged to face each other with the 2 nd spacer layer 212a interposed therebetween. That is, the 2 nd spacer layer 212a is disposed between the donor-side particles and the acceptor-side particles. In other words, in a state where the particles are not subjected to displacement, the particles on the donor side are separated from the particles on the acceptor side in the thickness of the 2 nd spacer layer 212 a.

Thus, the distance between the donor-side particles and the receptor-side particles can be defined as the thickness of the 2 nd spacer layer 212a, instead of the distribution centered on the average distance as in embodiment 1.

< 2 nd spacer layer >

The thickness of the 2 nd spacer layer 212a is preferably 1nm or more and 1000nm or less. More preferably 1nm or more and 500nm or less. More preferably 3nm to 300 nm. When the thickness is thinner than 1nm, a change in the distance between two types of light-emitting particles cannot be secured, and thus the sensor cannot be used. In embodiment 2, the thickness of the 2 nd spacer layer 212a is 1000nm or less, and is sufficient as a sensor.

Although the method for manufacturing the 2 nd spacer Layer 212a is not particularly limited, a method capable of controlling a thin film, such as a Layer-by-Layer (LBL) method or a spin coating method, may be used.

Here, the LBL method is a method in which a cationic polymer and an anionic polymer are alternately adsorbed by electrostatic force, thereby enabling control of a thin film.

The material of the 2 nd spacer layer 212a is not particularly limited, but is partially limited according to the processing method employed. For example, in the LBL method, cationic polymers such as polyallylamine and polydiallyldimethylammonium chloride, and plasma polymers such as polyacrylic acid, polystyrene sulfonic acid, polyisoprene sulfonic acid, and anionic polymers can be used. In the spin coating method, the material is not particularly limited if it is a material that dissolves in a solvent, and the above ionic polymer, silicone resin, polyvinyl chloride, polyurethane, polyvinyl alcohol, polypropylene, polyacrylamide, polycarbonate, polyethylene terephthalate, and the like can be used.

By controlling the thickness of the 2 nd spacer layer 212a, the distance between two types of light-emitting particles that emit light in the plane can be arbitrarily controlled.

The principle of displacement measurement by the sensor unit 200 is the same as that in embodiment 1, and therefore, the description thereof is omitted.

(modification 3)

Fig. 5 is a schematic diagram showing the configuration of modification 3 of the displacement measurement system according to embodiment 2.

This displacement measurement system 10d is different from the displacement measurement system according to embodiment 2 in that the 2 nd light-emitting particle 214 contains the same material as the 1 st light-emitting particle 211 and has a different particle diameter. The above-described aspect is the same as modification 1.

The principle of displacement measurement by the 2 nd spacer layer 212a and the sensor unit 200 is the same as that of embodiment 2, and therefore, the description thereof is omitted.

In addition, the present disclosure includes the case where any of the foregoing embodiments and/or examples are appropriately combined, and effects of the embodiments and/or examples can be exhibited.

[ industrial applicability ]

According to the displacement measurement system of the present invention, it is possible to easily measure the displacement or pressure in the micro area. The displacement measurement system according to the present invention can also be applied to the measurement of minute flaws and irregularities in optical lenses, precision machined parts, and the like.