阅读说明：本技术 一种线路基板的制作方法 (Manufacturing method of circuit substrate ) 是由 刘程秀 于 2018-06-22 设计创作，主要内容包括：本发明公开了一种线路基板的制作方法即一种高频金属基电路基板的制作方法,采用聚四氟乙烯粉与聚苯醚粉进行混合,经球磨机球磨,然后将基板介质材料置于模具中经高温压合形成基板介质材料层,选取玻璃纤维布放入PTFE树脂内经浸胶机进行预浸渍,高温烧结后制得玻璃布浸胶粘胶片,最后选取铜箔层,绝缘介质材料层,玻璃布浸胶粘结片,金属基材,将绝缘介质材料层设置在铜箔的上方,中间用玻璃布浸胶粘结片间隔并粘结,绝缘介质层上方为金属基板,中间用玻璃布浸胶粘结片间隔并粘结,最后经高温环境带压加工压制成型。本发明制作的高频金属基电路基板,具有结构简单,设计合理、绝缘性能好、低热阻高导热、散热性能优良、性能稳定、可靠、制作成本低等优点。(The invention discloses a method for manufacturing a circuit substrate, namely a method for manufacturing a high-frequency metal-based circuit substrate, which comprises the steps of mixing polytetrafluoroethylene powder and polyphenyl ether powder, carrying out ball milling by a ball mill, then placing the substrate dielectric material in a mould, carrying out high-temperature pressing to form a substrate dielectric material layer, selecting glass fiber cloth, putting the glass fiber cloth into PTFE resin, carrying out pre-impregnation by a glue dipping machine, carrying out high-temperature sintering to prepare a glass cloth dipping adhesive film, finally selecting a copper foil layer, an insulating dielectric material layer, a glass cloth dipping adhesive sheet and a metal substrate, arranging the insulating dielectric material layer above a copper foil, spacing and bonding the insulating dielectric material layer by the glass cloth dipping adhesive sheet, carrying out pressing and molding in a high-temperature environment. The high-frequency metal-based circuit substrate manufactured by the invention has the advantages of simple structure, reasonable design, good insulating property, low thermal resistance, high heat conduction, excellent heat dissipation performance, stable and reliable performance, low manufacturing cost and the like.)

1. A method for manufacturing a circuit substrate is a method for manufacturing a high-frequency metal-based circuit substrate, and is characterized by comprising the following steps of 1, manufacturing a high-heat-conduction insulating medium material layer, mixing low-dielectric-constant pure polytetrafluoroethylene powder and polyphenyl ether powder according to a certain proportion and the thickness requirement of a medium layer, ball-milling the mixture by a ball mill for a period of time to form a substrate medium material, and then placing the substrate medium material in a mold to form the substrate medium material layer through high-temperature pressing; step 2, preparing a polytetrafluoroethylene dispersion liquid and glass cloth impregnation adhesive sheet, selecting glass fiber cloth, putting the glass fiber cloth into PTFE resin, pre-impregnating the glass fiber cloth by using an impregnator, and sintering the glass fiber cloth at a high temperature to prepare a glass cloth impregnation adhesive sheet; and 3, manufacturing the high-frequency metal base circuit substrate, selecting a copper foil layer, an insulating medium material layer, a glass cloth dipping adhesive sheet and a metal substrate, arranging the insulating medium material layer above the copper foil, spacing and bonding the glass cloth dipping adhesive sheet in the middle, arranging the metal substrate above the insulating medium layer, spacing and bonding the glass cloth dipping adhesive sheet in the middle, and finally pressing and molding under high temperature environment and pressure.

2. The method as claimed in claim I, wherein the ball milling time of the ball mill in the first step is 22 hours, and the substrate dielectric material is pressed at 275 ℃ in a mold to form the substrate dielectric material layer.

3. The method as claimed in claim 1, wherein in the second step, the glass fiber cloth with a thickness of less than 0.03mm is selected and placed in the PTFE resin to be pre-impregnated by an impregnator, and then the glass cloth is sintered at a high temperature of 240 ℃ to obtain the glass cloth adhesive sheet.

4. The method as claimed in claim 1, wherein the copper foil layer in step three is 35um-270um thick.

5. The method as claimed in claim 1, wherein the metal substrate is made of aluminum, aluminum alloy, copper alloy, or stainless steel.

6. The method as claimed in claim 1, wherein the high temperature environment in step 3 is 290 ℃.

Technical Field

The invention relates to a method for manufacturing a circuit substrate, in particular to a method for manufacturing a high-frequency metal-based circuit substrate.

Background

With the development of high-power and high-density electronic devices and the continuous progress of electronic technology, electronic products are being developed in the aspects of lightness, thinness, smallness and multifunctionality, the traditional circuit substrate is gradually replaced by a high-frequency circuit substrate with high speed and high reliability, a polytetrafluoroethylene glass cloth coated copper foil plate is favored by customers in the high-frequency circuit substrate due to the excellent characteristics of low dielectric, low dielectric loss, low water absorption, wide use temperature and the like, a high-frequency metal-based circuit substrate bearing high current and high power is widely applied, the heat dissipation problem of the electronic devices on a circuit board is increasingly prominent, the adhesion between a thicker copper foil and a dielectric layer is critical in peel strength, the bonding sheet technology plays a crucial role in the bonding force between a metal matrix and the copper foil layer and the peel strength after the circuit layer is formed, the peel strength index after thermal stress is not less than 1.05N/Mm, the polytetrafluoroethylene glass cloth coated copper plate dielectric material polytetrafluoroethylene resin (PTFE) has a layer of fluoride-containing shell outside the molecule, so that the polytetrafluoroethylene glass cloth coated copper plate dielectric material polytetrafluoroethylene resin (PTFE) has outstanding non-stick performance, and after the polytetrafluoroethylene glass cloth coated copper plate dielectric material polytetrafluoroethylene resin (PTFE) is applied to a high heat-resistant environment, a circuit layer of a circuit board is easy to fall off or break, so that components on the circuit board are overheated, and the reliability of the whole machine is reduced.

Disclosure of Invention

The invention provides a basic circuit manufacturing method, namely a manufacturing method of a high-frequency metal-based circuit substrate. The invention adopts the following technical scheme: a manufacturing method of a high-frequency circuit substrate, namely a manufacturing method of a metal-based circuit substrate, comprises the following steps: 1. preparing a high-thermal-conductivity insulating medium material layer, mixing pure polytetrafluoroethylene powder with low dielectric constant and polyphenyl ether powder according to a certain proportion and the thickness requirement of the medium layer, ball-milling for a period of time by using a ball mill to form a substrate medium material, and then placing the substrate medium material in a mould to form the substrate medium material layer through high-temperature pressing; 2. preparing a polytetrafluoroethylene dispersion liquid and a glass cloth dipping adhesive sheet, selecting glass fiber cloth, putting the glass fiber cloth into PTFE resin, pre-soaking the glass fiber cloth by a dipping machine, and sintering the glass fiber cloth at a high temperature to prepare a glass cloth dipping adhesive sheet; 3. the method comprises the steps of manufacturing a high-frequency metal base circuit substrate, selecting a copper foil layer, an insulating medium material layer, a glass cloth gum dipping bonding sheet and a metal base material, arranging the insulating medium material layer above the copper foil, spacing and bonding the insulating medium material layer by the glass cloth gum dipping bonding sheet in the middle, arranging the metal base plate above the insulating medium layer, spacing and bonding the insulating medium material layer by the glass cloth gum dipping bonding sheet in the middle, and finally performing press forming in a high-temperature environment under pressure. The ball milling time of the ball mill in the step 1 is 22 hours, and the substrate dielectric material is put in a mould and pressed at 275 ℃ to form a substrate dielectric material layer; selecting glass fiber cloth with the thickness of less than 0.03mm in the step 2, placing the glass fiber cloth into PTFE resin, pre-soaking the glass fiber cloth by a gum dipping machine, and sintering the glass fiber cloth at the high temperature of 240 ℃ to obtain the glass cloth dipped adhesive film; in the step 3, the copper foil layer with the thickness of 35um-270um is selected; the plate of the metal base plate in the step 3 is any one of aluminum, aluminum alloy, copper alloy and stainless steel; and the high-temperature environment in the step 3 is 290 ℃.

The substrate dielectric material prepared by mixing polytetrafluoroethylene powder and polyphenyl ether powder and ball-milling the mixture by a ball mill is applied to a high heat-resistant environment, the thermal stress index reaches 290 ℃ and 120S and is not influenced by temperature and humidity, the substrate dielectric material still has excellent electrical insulation property after being used in an atmospheric environment for a long time, the physical and chemical properties of the substrate material are not changed, the service life is long, the dielectric material is an insulating material with low thermal resistance and high thermal conductivity, the substrate dielectric material is not deformed when being used at 295 ℃, the strength and the insulating property are still good, and the manufacturing cost is low; in order to bear large current and load high power, the copper foil of the circuit layer requires great current-cut-off capability, and the thickness of the copper foil requires 35-270 um copper foil; the polytetrafluoroethylene dispersion liquid and the glass cloth gum dipping bonding sheet are used, so that the bonding of a copper guessing layer, a metal substrate and an insulating medium material is facilitated, the viscoelastic property is excellent, the peeling strength of the substrate is improved, and the problem of poor bonding force of a copper foil is solved by particularly applying the polytetrafluoroethylene dispersion liquid and the glass cloth gum dipping bonding sheet to a high-heat-resistant environment; the metal substrate is used as a supporting object, has high thermal conductivity, is suitable for a circuit board circuit processing technology, is suitable for conventional machining such as drilling, punching, shearing, cutting and the like, reduces the processing cost, can bear mechanical and thermal stress, is suitable for a Surface Mounting Technology (SMT) for power components, does not need a radiator, greatly reduces the volume and has excellent radiating effect.

DETAILED DESCRIPTION OF EMBODIMENT (S) OF INVENTION

The invention provides a method for manufacturing a circuit substrate, namely a method for manufacturing a high-frequency metal-based circuit substrate, which comprises the following steps: step 1, manufacturing a high-thermal-conductivity insulating medium material layer, selecting proportioning requirements according to dielectric constant requirements, mixing low-dielectric-constant pure polytetrafluoroethylene powder and polyphenyl ether powder according to a certain proportion and combining with the thickness requirements of the medium layer, ball-milling for 22 hours by using a ball mill to form a substrate medium material, and then placing the substrate medium material in a mold to form the substrate medium material layer through high-temperature pressing at 275 ℃; step 2, preparing a polytetrafluoroethylene dispersion liquid and a glass cloth impregnation adhesive sheet, selecting glass fiber cloth with the thickness of less than 0.03mm, placing the glass fiber cloth in PTFE resin A, performing presoaking by using an impregnator, and sintering at the high temperature of 240 ℃ to prepare a glass cloth impregnation adhesive sheet; and 3, manufacturing a high-frequency metal base circuit substrate, selecting a copper foil layer with the thickness of 35-270 um, an insulating medium material layer, a glass cloth glue dipping bonding sheet and a metal base material, wherein the plate of the metal base substrate is any one of aluminum, aluminum alloy, copper alloy and stainless steel, arranging the insulating medium material layer above the copper foil, spacing and bonding the insulating medium material layer by the glass cloth glue dipping bonding sheet, spacing and bonding the insulating medium material layer above the metal base substrate above the insulating medium layer, spacing and bonding the insulating medium material layer by the glass cloth glue dipping bonding sheet, and finally performing pressure processing and forming in a 290 ℃ high-temperature environment under pressure.