阅读说明：本技术 太赫兹相位主动调制器件及其制备方法、调制系统 (Terahertz phase active modulation device, preparation method thereof and modulation system ) 是由 苏红 郑泽松 王世兴 彭圳 于智生 张敏 梁华伟 李玲 于 2021-08-13 设计创作，主要内容包括：一种太赫兹相位主动调制器件及其制备方法、调制系统,其中,所述太赫兹相位主动调制器件包括：基底、Cu-(2)Se薄膜层和金属谐振环；所述基底在太赫兹波段具有预设的通透率；所述Cu-(2)Se薄膜层形成在所述基底上；所述金属谐振环形成在所述Cu-(2)Se薄膜层上,所述金属谐振环具有周期对称性结构,所述金属谐振环采用超材料制成,能够调制太赫兹波的相位。所述Cu-(2)Se薄膜层在98.85℃-126.85℃范围能够发生二级相变,并且处于二级相变的相变点126.85℃时热导率最低,使热量集中于所述金属谐振环边沿进而增强表面等离激元效应,从而增强主动调制太赫兹波。该太赫兹相位主动调制器件通过控制温度实现调制功能,无需外接特殊电极和外加复杂的调制电场,即可实现对太赫兹波的高效调制。(A terahertz phase active modulation device, a preparation method thereof and a modulation system are provided, wherein the terahertz phase active modulation device comprises: substrate, Cu 2 A Se thin film layer and a metal resonance ring; the substrate has a preset permeability in a terahertz waveband; the Cu 2 A Se thin film layer is formed on the substrate; the metal resonance ring is formed on the Cu 2 On the Se thin film layer, the metal resonance ring has a periodic symmetry structure, is made of a metamaterial and can modulate the phase of terahertz waves. The Cu 2 The Se thin film layer can generate secondary phase change within the range of 98.85-126.85 ℃, and the heat conductivity is lowest when the Se thin film layer is positioned at the phase change point 126.85 ℃ of the secondary phase change, so that the heat is concentrated at the edge of the metal resonance ring to further enhance the surface plasmon effect, and the secondary phase change can be realized by the Se thin film layerAnd enhance the active modulation of terahertz waves. The terahertz phase active modulation device realizes a modulation function by controlling temperature, and can realize efficient modulation of terahertz waves without external special electrodes and external complex modulation electric fields.)

1. A preparation method of a terahertz phase active modulation device is characterized by comprising the following steps:

selecting a substrate, wherein the substrate has a preset permeability in a terahertz wave band;

forming Cu on the substrate₂A Se thin film layer; and

in the Cu₂A metal resonance ring is formed on the Se thin film layer, the metal resonance ring has a periodic symmetry structure, and the metal resonance ring is made of a metamaterial;

wherein the temperature control range corresponding to the terahertz phase active modulation device is 98.85-126.85 ℃, and the Cu is₂The Se thin film layer is a two-stage phase change material, when the Cu is₂When the temperature of the Se thin film layer is 126.85 ℃, the Cu is₂The heat conductivity of the Se thin film layer reaches a minimum value, the temperature of the edge of the metal resonance ring can be higher than the internal temperature, the surface plasmon effect when terahertz waves pass through the terahertz phase active modulation device is influenced, and the effect of modulating the terahertz waves is further enhanced.

2. The method according to claim 1, wherein the forming of Cu on the substrate₂A Se thin film layer comprising:

forming Cu on the substrate by chemical vapor deposition₂And the Se thin film layer.

3. The method according to claim 1, wherein the Cu is in a form of a powder₂Forming a metal resonance ring on the Se thin film layer, comprising:

the Cu is prepared by magnetron sputtering or vacuum evaporation₂And a metal resonance ring is formed on the Se thin film layer.

4. A terahertz phase active modulation device, comprising:

the terahertz wave band filter comprises a substrate, wherein the substrate has a preset permeability in a terahertz wave band;

Cu₂a Se thin film layer formed on the substrate;

a metal resonance ring formed on the Cu₂On the Se thin film layer, the metal resonance ring has a periodic symmetry structure and is made of a metamaterial;

wherein the temperature control range corresponding to the terahertz phase active modulation device is 98.85-126.85 ℃, and the Cu is₂The Se thin film layer is a two-stage phase change material, when the Cu is₂When the temperature of the Se thin film layer is 126.85 ℃, the Cu is₂The heat conductivity of the Se thin film layer reaches a minimum value, the temperature of the edge of the metal resonance ring can be higher than the internal temperature, the surface plasmon effect when terahertz waves pass through the terahertz phase active modulation device is influenced, and the effect of modulating the terahertz waves is further enhanced.

5. Terahertz phase active modulation device according to claim 4, wherein the material of the substrate comprises silicon nitride or germanium.

6. Terahertz phase active modulation device of claim 4, wherein the Cu₂The thickness of the Se thin film layer is 5 mu m.

7. The terahertz phase active modulation device of claim 4, wherein the material of the metal resonance ring comprises gold, platinum, palladium or copper; and/or the thickness of the metal resonance ring is 1-5 μm.

8. The active modulation device of claim 4, wherein the metal resonant ring comprises four resonant rings connected to each other and having an opening, the opening of the resonant rings being 90 °.

9. The terahertz phase active modulation device of claim 8, wherein the outer diameter of the resonance ring is 15 μ ι η and the inner diameter of the resonance ring is 13 μ ι η.

10. A terahertz phase active modulation system, comprising:

a terahertz detection system;

a terahertz phase active modulation device provided in a terahertz wave transmission path generated by the terahertz detection system, wherein the terahertz phase active modulation device is the terahertz phase active modulation device according to any one of claims 4 to 9;

the temperature control module is arranged close to the terahertz phase active modulation device and can control the temperature of the terahertz phase active modulation device.

Technical Field

The application relates to the technical field of terahertz, in particular to a terahertz phase active modulation device, a preparation method thereof and a modulation system.

Background

Terahertz waves are generally electromagnetic waves between microwave and far infrared waves, have a frequency of 0.1-10 THz (wavelength of 3 mm-30 μm), and belong to the far infrared band. Terahertz waves have good properties relative to other wave bands, such as transient property, high penetrability, broadband property, low harm and the like, have wide application prospects in the fields of spectral imaging, biological nondestructive testing, security inspection, substance characterization and the like, and are already applied to the cross frontier fields of the subjects of chemistry, material science, semiconductor science, vacuum electronics, electromagnetic fields, microwave and the like.

In the prior art, active terahertz phase modulation is divided into: passive devices such as lenses, beam splitters, gratings, polarizers and the like are mainly made of conventional materials or artificial metamaterials; the active device is mainly made of materials with special sensitive response, such as piezoelectric, electrooptical, acousto-optic, magneto-optic, phase change and the like. The most common prior art utilizes an external electric field as an active control means to realize the modulation of parameters such as terahertz wave intensity, however, the external electric field modulation device is complex, the electrode manufacturing process and control requirements are higher, and the production and use are inconvenient; conventional first order phase change feature materials such as Cu₂S、Ag₂The modulation gain coefficient of the modulation device manufactured by S and the like in the terahertz waveband is low, and the requirement of application cannot be met.

Therefore, it is necessary to provide a non-contact terahertz phase active modulation device with a simple structure and high gain, a method for manufacturing the same, and a modulation system, so as to solve the above problems.

Disclosure of Invention

The application provides a terahertz phase active modulation device, a preparation method thereof and a modulation system, which are used for realizing the modulation function of terahertz waves by controlling temperature.

In a first aspect, an embodiment of the present application provides a method for manufacturing a terahertz phase active modulation device, where the method includes: selecting a substrate, wherein the substrate has a preset permeability in a terahertz wave band; formation of Cu on a substrate₂A Se thin film layer; and in Cu₂And a metal resonance ring is formed on the Se thin film layer, has a periodic symmetry structure and is made of a metamaterial and can modulate the phase of terahertz waves.

Wherein the corresponding temperature control range of the terahertz phase active modulation device is 98.85-126.85 ℃, and the temperature control range of the terahertz phase active modulation device is Cu₂The Se thin film layer is a second-level phase change material, and Cu is formed in the second-level phase change process₂The thermal conductivity of the Se thin film layer is non-linearly changed, and when Cu is adopted₂When the temperature of the Se thin film layer is 126.85 ℃, Cu₂The heat conductivity of the Se thin film layer is minimum, the edge temperature of the metal resonance ring can be higher than the internal temperature through the characteristic, the surface plasmon effect when the terahertz waves pass through the device body is influenced, and the effect of modulating the terahertz waves is enhanced.

Based on this, the terahertz phase active modulation device in the embodiment of the application can keep the integrity of information carried by a wave beam, high-gain modulation of terahertz waves is completed through non-contact temperature adjustment, the effect is obvious, the modulation control condition is easy to realize, and the working stability of the device is high.

In one possible implementation, Cu is formed on the substrate₂A Se thin film layer comprising: formation of Cu on a substrate by chemical vapor deposition₂And the Se thin film layer. Thus, Cu₂The Se thin film layer can be uniformly formed on the surface of the substrate, and the modulation quality is improved.

In one possible implementation, in Cu₂Forming a metal resonance ring on the Se thin film layer, comprising: preparation method of Cu by magnetron sputtering or vacuum evaporation₂And a metal resonance ring is formed on the Se thin film layer. Thus, Cu can be realized₂The Se thin film layer is tightly combined with the metal resonance ring, and the size of the metal resonance ring can be controlled at the micron level, so that the metal resonance ring forms a metamaterial and can modulate the phase of terahertz waves.

In a second aspect, the present application further provides a terahertz phase active modulation device, including: substrate, Cu₂Se thin film layer and metal resonance ring.

The substrate has a preset permeability in a terahertz waveband; cu₂The Se thin film layer is formed on the substrate; the metal resonant ring is formed on Cu₂On the Se thin film layer, the metal resonance ring has a periodic symmetry structure and is made of metamaterial.

Wherein the corresponding temperature control range of the terahertz phase active modulation device is 98.85-126.85 ℃, and the temperature control range of the terahertz phase active modulation device is Cu₂The Se thin film layer is a second-level phase change material, and Cu is formed in the second-level phase change process₂The thermal conductivity of the Se thin film layer is non-linearly changed, and when Cu is adopted₂When the temperature of the Se thin film layer is 126.85 ℃, Cu₂The heat conductivity of the Se thin film layer has a minimum value, the edge temperature of the metal resonance ring can be higher than the internal temperature through the characteristic, the surface plasmon effect when terahertz waves pass through the device body is influenced, and the effect of modulating the terahertz waves is enhanced.

In one possible implementation, the material of the substrate includes silicon nitride or germanium. Therefore, the substrate can reduce transmission loss in the penetrating process of the terahertz waves and ensure the integrity of signals.

In one possible implementation, Cu₂The thickness of the Se thin film layer is 5 mu m.

In one possible implementation, the material of the metal resonance ring includes gold, platinum, palladium or copper; and/or the thickness of the metal resonance ring is 1-5 μm. Therefore, the thickness of the metal resonance ring is smaller than the wavelength of the terahertz wave, and the metal resonance ring can modulate the phase of the terahertz wave.

In one possible implementation, the metal resonant ring comprises four resonant rings connected to each other and having an opening, the opening of the resonant ring being 90 °.

In one possible implementation, the outer diameter of the resonance ring is 15 μm and the inner diameter of the resonance ring is 13 μm. In this way, the width dimension of the metal resonance ring is smaller than the wavelength of the terahertz wave, and based on this, the metal resonance ring can modulate the phase of the terahertz wave.

In the microstructure of the metal resonant ring, the material size is smaller than the wavelength acted by the metal resonant ring, and the shape is in cyclic periodic symmetry, so that the metal resonant ring has the property of a metamaterial and can influence the wave.

In a third aspect, the present application further provides a terahertz phase active modulation system, configured to modulate a phase of a terahertz wave beam, where the terahertz phase active modulation includes: the terahertz detection device comprises a terahertz detection system, a terahertz phase active modulation device and a temperature control module.

The terahertz phase active modulation device is arranged in a terahertz wave transmission path generated by a terahertz detection system.

The temperature control module is arranged close to the terahertz phase active modulation device and can control the temperature of the active modulation device.

Has the advantages that: the terahertz phase active modulation device, the preparation method and the modulation system thereof provided by the embodiment of the application have the advantages that the structure is simple, the preparation is convenient, the terahertz phase active modulation device can realize high-gain modulation of terahertz waves without externally connecting a control electrode manufactured by a special process and a complex electric field modulation device, and in addition, the Cu is adopted₂The Se thin film layer has the characteristic of two-stage phase change, so the invention is related to a first-stage phase change characteristic material such as Cu₂S、Ag₂And compared with the modulation device manufactured by S and the like, the modulation device has higher gain effect of terahertz wave phase modulation.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1 is a flowchart illustrating steps of a method for manufacturing a terahertz phase active modulation device according to an embodiment of the present application;

fig. 2 is a schematic structural diagram of a terahertz phase active modulation device provided in an embodiment of the present application;

fig. 3 is a schematic structural diagram of a terahertz phase active modulation module according to an embodiment of the present application;

fig. 4 is a schematic diagram of a terahertz phase active modulation system provided in an embodiment of the present application.

Main part numbers and descriptions:

1. a terahertz phase active modulation system; 10. a femtosecond laser source; 11. a beam splitter; 12. a terahertz generating device; 13. an off-axis parabolic mirror; 14. a terahertz phase active modulation module; 15. a terahertz detector; 16. a screen; 17. a server side; 18. a phase-locked amplification processing device; 19. a first reflector; 20. an electric displacement platform; 21. a second reflector;

141. a terahertz phase active modulation device; 142. a temperature control module; 1411. a substrate; 1412. cu₂A Se thin film layer; 1413. a metallic resonant ring.

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some, but not all, embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

It is also to be understood that the terminology used in the description of the present application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in the specification of the present application and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.

It should be further understood that the term "and/or" as used in this specification and the appended claims refers to and includes any and all possible combinations of one or more of the associated listed items.

The flow diagrams depicted in the figures are merely illustrative and do not necessarily include all of the elements and operations/steps, nor do they necessarily have to be performed in the order depicted. For example, some operations/steps may be decomposed, combined or partially combined, so that the actual execution sequence may be changed according to the actual situation.

Regarding terahertz wave modulation, a common device realizes functions through electric field current control, but an external electric field device is complex, so that the volume of the device is difficult to reduce, and an electrode manufactured by a special process is high in cost, so that the device is difficult to popularize and use; in order to overcome the defects in the traditional method, the embodiment of the application provides the terahertz phase active modulation device, the preparation method and the modulation system thereof, terahertz wave modulation can be realized through non-contact temperature control, the device is small in size, the preparation method is simple, and the terahertz phase active modulation device and a first-level phase change characteristic material such as Cu are used as the material₂S、Ag₂And compared with the modulation device manufactured by S and the like, the terahertz wave phase modulation device has a higher gain effect.

For the purpose of facilitating understanding of the embodiments of the present application, some terms referred to in the embodiments of the present application will be briefly described below.

1. Terahertz wave: refers to electromagnetic waves with frequency between 0.1THz and 10THz (the wavelength is between 3mm and 30 mu m).

2. Metamaterial: a class of man-made materials with special properties that are not found in nature. They possess special properties such as the ability to alter the general properties of light, electromagnetic waves, which conventional materials cannot achieve. There is little specificity in the composition of metamaterials, and their extraordinary properties result from their precise geometry and size.

3. Surface plasmon effect: when electromagnetic wave is incident to the interface of metal and dielectric medium, the free electrons on the metal surface are oscillated collectively, the electromagnetic wave and the free electrons on the metal surface are coupled to form a near-field electromagnetic wave which propagates along the metal surface, if the oscillation frequency of the electrons is consistent with the frequency of the incident light wave, resonance is generated, the energy of the electromagnetic field in the resonance state is effectively converted into the collective vibration energy of the free electrons on the metal surface, and then a special electromagnetic mode is formed: the electromagnetic field is confined to a small range of the metal surface and enhanced, and this phenomenon is called a surface plasmon phenomenon.

For convenience of understanding, the embodiments of the present application are described below with reference to a schematic structural diagram of a terahertz phase active modulation device.

As shown in fig. 1, the embodiment of the present application provides a method for manufacturing a terahertz phase active modulation device 141, and a specific structure of a device produced by the method is shown in fig. 2.

Specifically, as shown in fig. 1, the preparation method comprises the following steps:

s101: the substrate 1411 is selected, and the substrate 1411 has a preset transmittance in the terahertz wave band.

The material having a higher transmittance for the terahertz waveband is preferably selected, the higher transmittance may be specifically a transmittance greater than a preset threshold, such as greater than 90%, and the material for preparing the substrate 1411 satisfying the condition may be, for example, silicon nitride or germanium.

S102: forming Cu on a substrate 1411₂Se thin film layer 1412.

The application utilizes Cu₂When Se thin film layer 1412 is at 126.85 ℃, Cu₂The thermal conductivity of the Se film layer 1412 reaches a minimum value, so that the temperature at the edge of the metal resonant ring 1413 can be higher than the internal temperature, the surface plasmon effect of the terahertz waves passing through the terahertz phase active modulation device 141 is influenced, and the effect of modulating the terahertz waves is enhanced.

S103: in Cu₂A metal resonant ring 1413 is formed on the Se thin film layer 1412, the metal resonant ring 1413 has a periodic symmetry structure, and the metal resonant ring 1413 is made of a metamaterial.

The terahertz phase active modulation device 141 obtained through the preparation steps has a corresponding temperature control range of 98.85-126.85 ℃; cu₂The Se thin film layer 1412 is a two-stage phase change material, and Cu is formed in the two-stage phase change process₂The thermal conductivity of the Se thin film layer 1412 varies nonlinearly, and when Cu is used₂When the temperature of the Se thin film layer 1412 is 126.85 ℃, Cu₂The thermal conductivity of the Se film layer 1412 is a minimum value, and by the characteristic, the edge temperature of the metal resonant ring 1413 can be higher than the internal temperature, so that the surface plasmon effect of the terahertz waves passing through the terahertz phase active modulation device 141 is influenced, and the effect of modulating the terahertz waves is enhanced.

In one possible implementation, Cu is formed on the substrate 1411₂The Se thin film layer 1412, comprising: formation of Cu on substrate 1411 by chemical vapor deposition₂Se thin film layer 1412. Due to Cu₂The thickness of the Se thin film layer 1412 is in the micron level, the processing technology requirement is extremely high, and the vapor deposition method is convenient for controlling Cu₂The thickness of the Se thin film layer 1412 is made such that Cu₂The Se thin film layer 1412 can be uniformly formed on the surface of the substrate 1411.

In one possible implementation, in Cu₂A metal resonance ring 1413 is formed on the Se thin film layer 1412, including: preparation method of Cu by magnetron sputtering or vacuum evaporation₂A metal resonance ring 1413 is formed on the Se thin film layer 1412. Preparation method of Cu by magnetron sputtering or vacuum evaporation₂A metal resonant ring 1413 is formed on the Se thin film layer 1412 to realize Cu₂The Se film layer 1412 is tightly combined with the metal resonance ring 1413, and the size of the metal resonance ring 1413 can be controlled at a micron level and smaller than the wavelength of the terahertz wave, and then the metal resonance ring 1413 is controlled to have a specific periodically symmetrical shape, so that the metal resonance ring 1413 can affect the characteristics of the terahertz wave to modulate the phase of the terahertz wave.

As shown in fig. 2, the embodiment of the present application further provides a terahertz phase active modulationA device 141, the terahertz phase active modulation device 141 comprising: substrate 1411, Cu₂A Se thin film layer 1412 and a metallic resonant ring 1413.

The substrate 1411 has a preset transmittance in the terahertz wave band.

Cu₂The Se thin film layer 1412 is formed on the substrate 1411.

The metal resonant ring 1413 is formed on Cu₂On the Se thin film layer 1412, the metal resonant ring 1413 has a periodic symmetry structure and is made of a metamaterial.

The temperature control range corresponding to the terahertz phase active modulation device 141 is 98.85-126.85 ℃; cu₂The Se thin film layer 1412 is a two-stage phase change material, and Cu is formed in the two-stage phase change process₂The thermal conductivity of the Se thin film layer 1412 varies nonlinearly, and when Cu is used₂When the temperature of the Se thin film layer 1412 is 126.85 ℃, Cu₂The thermal conductivity of the Se thin film layer 1412 is a minimum value, and by the characteristic, the edge temperature of the metal resonant ring 1413 can be higher than the internal temperature, so that the surface plasmon effect of the terahertz wave passing through the terahertz phase active modulation device 141 is influenced, and the effect of modulating the terahertz wave is further enhanced.

In one possible implementation, the material of the substrate 1411 includes silicon nitride or germanium. Thus, the substrate 1411 can reduce transmission loss during the penetration of the terahertz wave, ensuring the integrity of the signal.

In one possible implementation, Cu₂The thickness of the Se thin film layer 1412 is 5 μm.

In one possible implementation, the material of the metal resonant ring 1413 includes gold, platinum, palladium, or copper; and/or the thickness of the metal resonant ring 1413 is 1 μm to 5 μm. In order to realize the metamaterial property of the metal resonant ring 1413, the thickness dimension thereof needs to be smaller than the wavelength of the terahertz wave.

In one possible implementation, the metallic resonant ring 1413 includes four interconnected resonant rings with openings that are 90 °.

In one possible implementation, the outer diameter of the resonance ring is 15 μm and the inner diameter of the resonance ring is 13 μm. In this way, the width dimension of the metal resonance ring 1413 is smaller than the wavelength of the terahertz wave, based on which the metal resonance ring 1413 can change the parameter characteristics of the terahertz wave.

In the structure of the metal resonant ring 1413 provided in the embodiment of the present application, four resonant rings connected to each other and having an opening are one of periodically symmetrical structures, and both the thickness dimension and the width dimension are smaller than the wavelength of the terahertz wave. The metal resonant ring 1413 having the above features can modulate the phase of the terahertz wave when the terahertz wave passes through, and realize the function of a metamaterial.

As shown in fig. 4, the embodiment of the present application provides a terahertz phase active modulation system, where the terahertz phase active modulation system 1 includes a terahertz detection system, a terahertz phase active modulation device 141, and a temperature control module 142.

The terahertz phase active modulation device 141 is disposed in a terahertz wave transmission path generated by the terahertz detection system.

The temperature control module 142 is arranged close to the terahertz phase active modulation device 141, and the temperature control module 142 can control the temperature of the terahertz phase active modulation device 141.

Illustratively, the terahertz detection system may include a femtosecond laser light source 10, a beam splitter 11, a terahertz generation device 12, an off-axis parabolic mirror 13, a terahertz phase active modulation module 14, a terahertz detector 15, a screen 16, a server end 17, a phase-locked amplification processing device 18, a first mirror 19, an electric displacement platform 20, and a second mirror 21.

Specifically, the terahertz detection system generates femtosecond laser by a femtosecond laser light source 10, the femtosecond laser is divided into a first light beam and a second light beam by a beam splitter 11, the first light beam enters a terahertz generation device 12 to generate terahertz waves, the generated terahertz waves enter a terahertz phase active modulation module 14 for modulation by a 13-axis paraboloidal mirror, the terahertz phase active modulation module 14 is a combination of a terahertz phase active modulation device 141 and a temperature control module 142, and information of the modulated beams is collected by a terahertz detector 15 and transmitted to a phase-locked amplification processing device 18 for processing; the second beam passes through the first mirror 19, the second mirror 21 and the electric displacement platform 20 and then enters the phase-locked amplification processing device 18. The phase-locked amplification processing device 18 compares and analyzes the information of the modulated beam with the information of the first light beam to obtain a detection result, and uploads the detection result to the server 17, so that the detection result of the time domain signal and the related frequency spectrum information corresponding to the terahertz phase active modulation device 141 is displayed on the screen 16.

The terahertz phase active modulation device provided by the embodiment of the application at least comprises: substrate, Cu₂Se thin film layer and metal resonance ring. The substrate has a preset permeability in a terahertz waveband; cu₂The Se thin film layer is formed on the substrate; the metal resonant ring is formed on Cu₂On the Se thin film layer, the metal resonance ring has a periodic symmetry structure and is made of metamaterials. Wherein the corresponding temperature control range of the terahertz phase active modulation device is 98.85-126.85 ℃, and the temperature control range of the terahertz phase active modulation device is Cu₂The Se thin film layer is a second-level phase change material, and Cu is formed in the second-level phase change process₂The thermal conductivity of the Se thin film layer is non-linearly changed, and when Cu is adopted₂When the temperature of the Se thin film layer is 126.85 ℃, Cu₂The heat conductivity of the Se thin film layer has a minimum value, the edge temperature of the metal resonance ring can be higher than the internal temperature through the characteristic, the surface plasmon effect when terahertz waves pass through the device body is influenced, and the effect of modulating the terahertz waves is enhanced. Based on the structure, the terahertz phase active modulation device and the first-order phase change characteristic material such as Cu₂S、Ag₂S and the like have a terahertz wave phase modulation effect with a higher gain effect compared with a modulation device manufactured by the method; compared with an electric control device, the required additional control mode is easier to realize, and the required application cost is low.

While the invention has been described with reference to specific embodiments, the scope of the invention is not limited thereto, and those skilled in the art can easily conceive various equivalent modifications or substitutions within the technical scope of the invention. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.