阅读说明：本技术 一种可动多离子源配置的离子束刻蚀机 (ion beam etching machine with movable multi-ion source configuration ) 是由 胡冬冬 李娜 许开东 陈兆超 邱勇 程实然 车东晨 侯永刚 于 2019-09-17 设计创作，主要内容包括：本发明涉及一种可动多离子源配置的离子束刻蚀机,属于半导体刻蚀技术领域。可动多离子源配置的离子束刻蚀机,该刻蚀机包括反应腔体,该反应腔体上设有窗口,反应腔体的中心处布置电极运动驱动机构,电极运动驱动机构上设有载片电极,载片电极上放置晶圆；反应腔体内位于晶圆的上方设有一个或多个离子源；一个或多个离子源与晶圆之间布置分别布置中和器；一个或多个离子源所发出的离子束通过中和器所发出的中和束流。采用多离子源及其活动功能的配置可以在晶圆自身取消公转后实现晶圆表面接收到的离子数量最大程度的相同,提高晶圆表面刻蚀的均匀性。同时可以根据刻蚀的结果,随时调整离子源的位置,实现刻蚀过度或刻蚀不足部位的灵活调整性。(The invention relates to an ion beam etching machine with movable multi-ion source configuration, belonging to the technical field of semiconductor etching. The ion beam etching machine comprises a reaction cavity, wherein a window is arranged on the reaction cavity, an electrode movement driving mechanism is arranged at the center of the reaction cavity, a slide electrode is arranged on the electrode movement driving mechanism, and a wafer is placed on the slide electrode; one or more ion sources are arranged above the wafer in the reaction cavity; arranging neutralizers between the one or more ion sources and the wafer respectively; the ion beam emitted by the one or more ion sources passes through the neutralizing beam emitted by the neutralizer. By adopting the configuration of the multi-ion source and the movable function thereof, the maximum degree of the same quantity of the ions received by the surface of the wafer can be realized after the revolution of the wafer is cancelled, and the etching uniformity of the surface of the wafer is improved. Meanwhile, the position of the ion source can be adjusted at any time according to the etching result, and the flexible adjustment of the over-etched or under-etched part is realized.)

1. An ion beam etcher with a movable multi-ion source configuration, characterized in that: the etching machine comprises a reaction cavity, wherein a window is arranged on the reaction cavity, an electrode movement driving mechanism is arranged at the center of the reaction cavity, a slide electrode is arranged on the electrode movement driving mechanism, and a wafer is placed on the slide electrode;

One or more ion sources are arranged above the wafer in the reaction cavity; arranging neutralizers between the one or more ion sources and the wafer respectively; one or more ion sources emit ion beams, and the ion beams pass through a neutralization beam current emitted by the neutralizer;

The ion source takes the slide glass electrode as a circle center to move above the slide glass electrode along the arc direction;

The ion sources move above the slide glass electrode along the arc direction by taking the slide glass electrode as the center of a circle.

2. the ion beam etcher with a movable multi-ion source configuration as claimed in claim 1, wherein: the neutralizer is arranged in the ion source and operates synchronously with the ion source; the ion beam irradiates on the wafer through the neutralization beam.

3. The ion beam etcher with a movable multi-ion source configuration as claimed in claim 1, wherein: the neutralizers are respectively positioned at two sides of the slide electrode and are arranged at the bottom end of the reaction cavity at a certain elevation angle; the neutralization beams emitted by the neutralizer are staggered above the slide electrode to form triangular neutralization beams; the ion beam irradiates on the wafer through the triangular neutralization beam.

4. The ion beam etcher with a movable multi-ion source configuration as claimed in claim 1, wherein: the reaction cavity is a semicircular cavity; the number of the ion sources in the semicircular reaction cavity is three; the three ion sources are respectively positioned on the inner wall of the semicircular reaction cavity, and the moving ranges of the three ion sources are the left side part, the right side part and the top part of the slide electrode.

5. The ion beam etcher of claim 4, wherein: the three ion sources respectively and independently move, and the moving ranges of the three ion sources are mutually symmetrical; the ion sources on the left side and the right side do arc motion; the ion source on the top moves in an arc.

6. The ion beam etcher with a movable multi-ion source configuration as claimed in claim 1, wherein: the reaction cavity is a semicircular cavity; the two ion sources are respectively positioned on the inner wall of the semicircular reaction cavity; the moving range of the two ion sources is the left and right sides of the slide electrode.

7. The ion beam etcher as set forth in claim 6, wherein: the two ion sources move independently respectively, and the moving ranges of the two ion sources are 1/4 arc walls which are symmetrical in the reaction cavity with a semicircular shape.

8. The ion beam etcher as set forth in claim 6, wherein: the two ion sources respectively and independently move and are positioned at the left side part and the right side part of the slide electrode; the two ion sources are respectively positioned on the inner wall of the semicircular reaction cavity and have asymmetric arc-shaped moving ranges;

The asymmetric arc-shaped moving range of one ion source is larger than that of the other ion source; the ion source in the larger circular arc moving range can move to the top of the slide electrode and the central axis of the slide electrode coincide with each other.

Technical Field

The invention relates to an ion beam etching machine with movable multi-ion source configuration, belonging to the technical field of semiconductor etching.

Background

in the manufacturing processes of semiconductor devices, chips, and the like, an etching process is most frequently used and occurs among many processes. Some materials on the chip are partially or completely etched or removed during the etching process in IC manufacturing. Among all etching processes, plasma etching and Ion Beam Etching (IBE) processes are more and more important, and especially, as the integration of chips is improved, the critical dimension is reduced, the process requirements such as high selectivity and accurate pattern transfer are improved, the advantages of plasma etching and ion beam etching are more prominent.

As chip key structures are shifted from a plane to a 3D structure (such as a FinFET structure in a logic device), an advanced memory structure (such as a Magnetic Random Access Memory (MRAM) and a resistive random access memory (ReRAM)) which have higher requirements on the accuracy, repeatability and process quality required by an etching process, and meanwhile, in the manufacturing process of the MRAM devices, a plurality of special metal materials and metal compound materials need to be used for the etching process Ion beam etching systems of further type address these problems encountered during fabrication of advanced devices.

ion beam etching is to bombard the surface of a material with ions with certain energy to sputter atoms of the material, thereby achieving the purpose of etching. Inert gas such as Ar, Kr or Xe is filled in an ion source discharge chamber and ionized to form plasma, then ions are led out in a beam shape and accelerated by a grid, an ion beam with certain energy enters a working chamber and is emitted to the surface of a solid to impact atoms on the surface of the solid, so that the atoms of the material are sputtered, and the aim of etching is achieved. The ion beam etching has the advantages of good directionality, anisotropy and high steepness; the resolution is high and can reach 0.01 mu m; without the limitation of etching materials (metals and compounds, inorganic and organic, insulators and semiconductors); the ion beam incident angle theta may be varied during the etching process to control the profile of the pattern. Since ion beam etching is not selective to materials, the materials which cannot be thinned or are difficult to be thinned by chemical grinding and dielectric grinding can be thinned by ion beams. In addition, since the ion beam can strip the atomic layer by layer, it has a micro-analysis sample capability and can be used for precision processing.

the sample stage needs to simultaneously complete all necessary functions of sample bearing, cooling, tilting, rotating and the like, so that the structure of the sample stage is complex and the volume is large, compared with reactive particle etching equipment, ion beam etching equipment generally requires a vacuum cavity with larger volume, and therefore a vacuum pump set with higher pumping speed needs to be matched, and higher accessory cost is needed; in addition, the sample stage needs to return to the initial position (e.g., 0)^°) The incoming wafer is tilted to an angle (e.g., 70 degrees)^°) Etching the wafer back out of the wafer again from the original position can reduce the throughput of the MRAM factory.

Disclosure of Invention

the present invention addresses the above deficiencies by providing an ion beam etcher with a movable multi-ion source arrangement.

The invention adopts the following technical scheme:

The invention relates to an ion beam etching machine with movable multi-ion source configuration, which comprises a reaction cavity, wherein a window is arranged on the reaction cavity, an electrode movement driving mechanism is arranged at the center of the reaction cavity, a slide electrode is arranged on the electrode movement driving mechanism, and a wafer is placed on the slide electrode;

One or more ion sources are arranged above the wafer in the reaction cavity; arranging neutralizers between the one or more ion sources and the wafer respectively; one or more ion sources emit ion beams, and the ion beams pass through a neutralization beam current emitted by the neutralizer;

The ion source takes the slide glass electrode as a circle center to move above the slide glass electrode along the arc direction;

The ion sources move above the slide glass electrode along the arc direction by taking the slide glass electrode as the center of a circle.

The invention relates to an ion beam etching machine with a movable multi-ion source configuration, wherein a neutralizer is arranged in an ion source and operates synchronously with the ion source; the ion beam irradiates on the wafer through the neutralization beam.

According to the ion beam etching machine with the movable multi-ion source configuration, the neutralizers are respectively positioned at two sides of the slide electrode and are arranged at the bottom end of the reaction cavity at a certain elevation angle; the neutralization beams emitted by the neutralizer are staggered above the slide electrode to form triangular neutralization beams; the ion beam irradiates on the wafer through the triangular neutralization beam.

according to the ion beam etching machine with the movable multi-ion source configuration, the reaction cavity is a semicircular cavity; the number of the ion sources in the semicircular reaction cavity is three; the three ion sources are respectively positioned on the inner wall of the semicircular reaction cavity, and the moving ranges of the three ion sources are the left side part, the right side part and the top part of the slide electrode.

According to the ion beam etching machine with the movable multi-ion source configuration, the three ion sources respectively and independently move, and the moving ranges of the three ion sources are mutually symmetrical; the ion sources on the left side and the right side do arc motion; the ion source on the top moves in an arc.

according to the ion beam etching machine with the movable multi-ion source configuration, the reaction cavity is a semicircular cavity; the two ion sources are respectively positioned on the inner wall of the semicircular reaction cavity; the moving range of the two ion sources is the left and right sides of the slide electrode.

According to the ion beam etching machine with the movable multi-ion source configuration, the two ion sources respectively and independently move, and the moving ranges of the two ion sources are 1/4 arc walls which are symmetrical in the reaction cavity body with a semicircular shape.

According to the ion beam etching machine with the movable multi-ion source configuration, the two ion sources respectively and independently move and are positioned at the left side part and the right side part of the slide electrode; the two ion sources are respectively positioned on the inner wall of the semicircular reaction cavity and have asymmetric arc-shaped moving ranges;

The asymmetric arc-shaped moving range of one ion source is larger than that of the other ion source; the ion source in the larger circular arc moving range can move to the top of the slide electrode and the central axis of the slide electrode coincide with each other.

advantageous effects

According to the ion beam etching machine with the movable multi-ion source configuration, provided by the invention, the multi-ion source and the movable function configuration thereof can realize the maximum identical quantity of ions received by the surface of the wafer after the wafer cancels revolution, and the uniformity of etching the surface of the wafer is improved. Meanwhile, the position of the ion source can be adjusted at any time according to the etching result, and the flexible adjustment of the over-etched or under-etched part is realized.

Drawings

FIG. 1 is a schematic diagram of a three-ion source reaction chamber according to the present invention;

FIG. 2 is a schematic diagram of a neutralizer shared by three ion source reaction chambers according to the present invention;

FIG. 3 is a schematic diagram of a two-ion source reaction chamber according to the present invention;

FIG. 4 is a schematic structural view of a reaction chamber with two ion sources sliding asymmetrically according to the present invention;

FIG. 5 is a schematic diagram of a reaction chamber with two ion sources sliding symmetrically according to the present invention.

FIG. 1-reaction chamber; 2-slide electrode; 3-an electrode motion driving mechanism; 4-a wafer; 201-direction of electrode rotation; 50-ion source one; 501-setting a first position of an ion source; 502-ion source one setting position two; 100-a direction of motion of the ion source; 80-ion source two; 801-ion source 2 set position one; setting a second position for the 802-ion source II; 70-ion source three; 120-ion source two direction of motion; 51-a neutralizer I; 52-neutralizer II; a first utility neutralizer 300; a second neutralizer 400 is common.

Detailed Description

in order to make the purpose and technical solution of the embodiments of the present invention clearer, the technical solution of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention without any inventive step, are within the scope of protection of the invention.

the invention provides an ion beam etching machine with movable multi-ion source configuration, which comprises a reaction cavity, wherein a window is arranged on the reaction cavity, an electrode movement driving mechanism is arranged at the center of the reaction cavity, a slide electrode is arranged on the electrode movement driving mechanism, and a wafer is placed on the slide electrode; one or more ion sources are arranged above the wafer in the reaction cavity; arranging neutralizers between the one or more ion sources and the wafer respectively; one or more ion sources emit ion beams, and the ion beams pass through a neutralization beam current emitted by the neutralizer; an ion source moves above the slide electrode along the arc direction by taking the slide electrode as the center of a circle; the plurality of ion sources move above the slide glass electrode along the arc direction by taking the slide glass electrode as a circle center;

The movement mode of the ion source can be divided into two modes, one mode is that the position of the ion source is manually moved in the testing process, the fixed position at the rear end of the ion source is in the shape of a long linear fixed hole which can be manually adjusted, and meanwhile, the long linear fixed piece and the cavity are fixed in a sealing mode.

the other mode is an external driving mode, the bottom of the ion source and the inner side wall of the reaction cavity are in a chain driving mode or a sliding rail mode, two transmission mechanisms such as the matching of gears and chains are respectively arranged at the starting end and the tail end of the position of the ion source, the bottom of the ion source is clamped on the chains or the sliding rails, the reaction cavity is externally driven by a motor, the rotation of a motor shaft drives a short transmission mechanism to rotate, the chains or the sliding rails are driven to move along a set path, and finally the ion source is driven to randomly switch positions within a set rotation range.

The two motion modes can adopt the existing equipment to achieve the purpose of sliding.

the reaction cavity is a polyhedron structure with hollow characteristics, a rectangular hole is formed in one side edge, the size of the rectangular hole meets the semiconductor Semi S2 certification standard, the standard size of the rectangular hole is adjusted according to a wafer applicable to the system, the opening can be used for a manipulator to load the wafer into the reaction cavity, after the wafer is placed on an etching loading table, the manipulator withdraws from the rectangular hole, a door valve installed outside is closed, and the interior of the reaction cavity is in a sealed vacuum state. The etching slide holder is positioned in the middle of the reaction cavity, and the central axis of the etching slide holder can rotate through a motor or other driving mechanisms. The working process of the ion beam etching system is that the electrode slide starts to rotate around the axis of the electrode slide at a constant speed, and after the electrode is stabilized, the ion source is started to emit ion beams with energy; the wafer is etched with the wafer facing the ion source grid or at a certain angle to the ion source grid. And closing the ion beam after the etching is finished, stopping the rotation of the electrode slide glass, and taking out the wafer by the mechanical arm.

The ion beam etching machine with movable multi-ion source configuration is provided with a plurality of ion sources, such as 2, 3 or more, on a reaction cavity, wherein the ion sources are respectively positioned on the side wall of the cavity above an electrode, the centers of ion source grids face to the center of the surface of the electrode, and the angles of the central lines of the ion sources and the surface of a wafer are respectively alpha, beta, gamma.

As shown in fig. 1, which is a schematic view of an apparatus configured with three ion sources, the first ion source 50, the third ion source 70 and the second ion source 80 can rotate around the axis of an electrode respectively, the positions of the ion sources can be adjusted, reaction gas can be introduced into each ion source, meanwhile, a neutralizer is arranged on each ion source, electrons emitted by the ion sources are neutralized, the number of the neutralizers configured for each ion source can be 1, 2 or more, and the number of the neutralizers is selected according to the density of the ion beams; the whole device can also share 1, 2 or more neutralizers;

As shown in fig. 2, which is a schematic of 2 common neutralizers, the common neutralizers 300 and 400 are located opposite the ion source, and the neutralizing beam emitted from the neutralizers may pass through the emission path of the ion source to neutralize the ion beam before it reaches the surface of the wafer.

Fig. 3 and 4 are schematic diagrams of an apparatus configured with two ion sources, i.e., a first ion source 50 and a second ion source 80, respectively, wherein the first ion source 50 can rotate around the center line of the slide electrode in the right half area along the direction 100, and the second ion source 80 can rotate around the center line of the slide electrode in the left half area along the direction 120. As shown, the second ion source 80 in the left area may be moved from the first ion source 2 setting 801 to the second ion source setting 802, where the angle between the center line and the wafer surface changes from β 1 to β 2, and the first ion source 50 in the right area may be moved from the first ion source setting 501 to the second ion source setting 502, where the angle between the center line and the wafer surface changes from α 1 to α 2.

The working process of the ion beam etching system is that the angle positions of the first ion source 50 and the second ion source 80 relative to the surface of the slide electrode are adjusted, after a wafer is placed on the slide electrode by a manipulator, a cavity reaches a certain high vacuum degree under the action of a vacuum system, and the wafer is driven by the electrode to rotate around the axis of the electrode under the action of an external driving mechanism; and a reaction gas A is introduced into the first ion source 50, a reaction gas B is introduced into the second ion source 80, and the two ion sources are electrified to ionize the gas A and the gas B to generate ion beams for etching the wafer placed on the surface of the electrode.

the invention is carried out by the following examples: