阅读说明：本技术 一种板级扇出型封装精细线路制作方法 (Manufacturing method of board-level fan-out type packaging fine circuit ) 是由 杨斌 华显刚 崔成强 林挺宇 吴波 于 2019-08-01 设计创作，主要内容包括：本发明提供一种板级扇出型封装精细线路制作方法,包括以下步骤：提供芯片,将芯片经过塑封料塑封后形成塑模板件；利用die shift AOI设备测量芯片的偏移量,然后在塑模板件上贴感光干膜,并结合前面测量芯片的偏移量修正曝光参数；将贴有感光干膜的塑模板件进行显影处理,得到精细线路的凹槽；使用真空溅射设备在具有凹槽的塑模板件上沉积钛薄层和铜薄层,使之在感光干膜表面以及凹槽的侧面和底面形成种子层；在种子层上电镀厚铜层；采用湿法闪蚀液闪蚀厚铜层,干法刻蚀钛薄层和铜薄层,并采用去膜液褪去感光干膜,完成线路制作。本发明的板级扇出型封装精细线路制作方法可以制备线宽线距15μm/15μm及以下精度的线路,从根本上解决了侧蚀问题。(The invention provides a method for manufacturing a board-level fan-out type packaging fine circuit, which comprises the following steps: providing a chip, and plastically packaging the chip by a plastic packaging material to form a plastic mould plate; measuring the offset of the chip by using die shift AOI equipment, then pasting a photosensitive dry film on the plastic mould plate, and correcting exposure parameters by combining the offset of the previously measured chip; carrying out developing treatment on the molded plate part pasted with the photosensitive dry film to obtain a groove of the fine circuit; depositing a titanium thin layer and a copper thin layer on the mould plate part with the groove by using vacuum sputtering equipment, and forming seed layers on the surface of the photosensitive dry film and the side surface and the bottom surface of the groove; plating a thick copper layer on the seed layer; and (3) adopting a wet flash etching liquid to flash etch the thick copper layer, adopting a dry etching method to etch the thin titanium layer and the thin copper layer, and adopting a film removing liquid to remove the photosensitive dry film to finish the circuit manufacturing. The board-level fan-out type packaging fine circuit manufacturing method can be used for manufacturing circuits with the line width and the line distance of 15 mu m/15 mu m and the accuracy below, and fundamentally solves the problem of side etching.)

1. A method for manufacturing a board-level fan-out type packaging fine circuit is characterized by comprising the following steps:

providing a chip, and plastically packaging the chip by a plastic packaging material to form a plastic mould plate;

Measuring the offset of the chip by using die shift AOI equipment, then pasting a photosensitive dry film on the plastic mould plate, and correcting exposure parameters by combining the offset of the previously measured chip;

carrying out developing treatment on the molded plate part pasted with the photosensitive dry film to obtain a groove of the fine circuit;

Depositing a titanium thin layer and a copper thin layer on the mould plate part with the groove by using vacuum sputtering equipment, and forming seed layers on the surface of the photosensitive dry film and the side surface and the bottom surface of the groove;

Plating a thick copper layer on the seed layer;

and (3) adopting a wet flash etching liquid to flash etch the thick copper layer, adopting a dry etching method to etch the thin titanium layer and the thin copper layer, and adopting a film removing liquid to remove the photosensitive dry film to finish the circuit manufacturing.

2. The method of manufacturing board-level fan-out package fine lines of claim 1, wherein: and (3) deoiling and cleaning the upward-facing surface of the die plate chip by plasma dry treatment.

3. The method of manufacturing board-level fan-out package fine lines of claim 1, wherein: the thickness of the photosensitive dry film is 20-60 μm.

4. The method of manufacturing board-level fan-out package fine lines of claim 1, wherein: the deposition temperature is controlled below 150 ℃.

5. the method of manufacturing board-level fan-out package fine lines of claim 1, wherein: and (3) degreasing and cleaning the surface of the mould plate part on which the seed layer is formed by plasma dry processing.

6. The method of manufacturing board-level fan-out package fine lines of claim 1, wherein: the electroplating solution is an acidic electroplating solution.

7. The method of manufacturing board-level fan-out package fine lines of claim 1, wherein: the membrane removing solution is NaOH solution.

8. The method of manufacturing board-level fan-out package fine lines of claim 1, wherein: the flash etching solution is H₂SO₄-H₂O₂and (4) etching liquid.

Technical Field

the invention relates to the technical field of fan-out type packaging, in particular to a method for manufacturing a board-level fan-out type packaging fine circuit.

Background

The existing board-level fan-out type packaging utilizes a semi-additive method to prepare a fine circuit, generally, chemical copper with the thickness of about 1 mu m is firstly deposited on a material, then copper wires with patterns are electroplated on the chemical copper, and the problem that the circuit is easy to peel off when a fine circuit pattern is manufactured is caused due to the weak bonding force between the circuit and a base material caused by the loose texture of the chemical copper layers. In order to increase the bonding force of the electroless copper layer, it is necessary to increase the roughness of the surface of the material, which makes it difficult to fabricate fine lines.

The other method is to deposit Ti/Cu by using PVD equipment, wherein the deposition thickness is only 100nm/300nm, the bonding force of a deposition layer and a dielectric material is far better than that of a chemical copper layer, the thickness of deposited metal is thinner and is only 0.4 mu m, and when a SeedLayer is removed, the lower side etching (Under Cut) of a circuit can be ensured, and the appearance and the reliability of the circuit are better.

However, the two methods cannot fundamentally solve the problem of Under Cut, and the problem is particularly important in the preparation of circuits with the line width and the line distance of 15 μm/15 μm and the accuracy below, and the yield of the whole product can be directly influenced.

Disclosure of Invention

The invention provides a method for manufacturing a board-level fan-out type packaging fine circuit, which can effectively solve the problem of side etching in the preparation of a high-precision circuit.

The technical scheme adopted by the invention is as follows: a method for manufacturing a board-level fan-out type packaging fine circuit comprises the following steps:

Providing a chip, and plastically packaging the chip by a plastic packaging material to form a plastic mould plate;

measuring the offset of the chip by using die shift AOI equipment, then pasting a photosensitive dry film on the plastic mould plate, and correcting exposure parameters by combining the offset of the previously measured chip;

Carrying out developing treatment on the molded plate part pasted with the photosensitive dry film to obtain a groove of the fine circuit;

Depositing a titanium thin layer and a copper thin layer on the mould plate part with the groove by using vacuum sputtering equipment, and forming seed layers on the surface of the photosensitive dry film and the side surface and the bottom surface of the groove;

Plating a thick copper layer on the seed layer;

And (3) adopting a wet flash etching liquid to flash etch the thick copper layer, adopting a dry etching method to etch the thin titanium layer and the thin copper layer, and adopting a film removing liquid to remove the photosensitive dry film to finish the circuit manufacturing.

further, the upwardly facing surface of the mold plate part chip is degreased and cleaned by plasma dry treatment.

Further, the thickness of the photosensitive dry film is 20-60 μm.

Further, the deposition temperature is controlled below 150 ℃.

further, the surface of the molded plate part on which the seed layer is formed is degreased and cleaned by plasma dry processing.

Further, the plating solution is an acidic plating solution.

Further, the membrane removing solution is a NaOH solution.

Further, the flash etching solution is H₂SO₄-H₂O₂And (4) etching liquid.

compared with the prior art, the board-level fan-out type packaging fine circuit manufacturing method disclosed by the invention is a fine circuit manufactured by adopting a method of chip offset photoetching compensation, photosensitive dry film pasting, exposure development, vacuum sputtering of a titanium thin layer and a copper thin layer, thick copper layer electroplating, wet flash etching of a thick copper layer, dry etching of the titanium thin layer and the copper thin layer and photosensitive dry film removing, and as the offset photoetching compensation can accurately confirm the position of a chip on a board, the exposure error caused by offset is avoided, the problem of side etching in the traditional semi-additive method for removing a seed layer is effectively solved, the circuit with the line width and the line distance of 15 mu m/15 mu m and below can be manufactured, and the side etching problem is fundamentally solved.

Drawings

The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention without limiting the invention. In the drawings, there is shown in the drawings,

FIG. 1: the invention relates to a step flow chart of a manufacturing method of a board-level fan-out type packaging fine circuit;

FIG. 2: the invention discloses a flow diagram of a manufacturing method of a board-level fan-out type packaging fine circuit.

Detailed Description

the following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.

As shown in fig. 1 and fig. 2, the method for manufacturing board-level fan-out type packaged fine lines of the present invention comprises the following steps:

S1: providing a chip 1, and carrying out plastic package on the chip 1 by a plastic package material 2 to form a plastic mold plate component 3. Wherein the surface of the molded plate member 3, which faces upward, of the chip 1 is degreased and cleaned by plasma dry processing.

s2: measuring the offset of the chip 1 by using die shift AOI equipment, then pasting a photosensitive dry film 4 on the plastic mould plate 3, and correcting exposure parameters (namely chip offset photoetching compensation) by combining the offset of the chip 1 measured in the front. Wherein the thickness of the photosensitive dry film 4 is 20-60 μm.

S3: the molded plate member 3 to which the photosensitive dry film 4 is attached in S2 is subjected to a developing process to obtain grooves 5 of fine wirings.

S4: a thin titanium layer 6 and a thin copper layer 7 are deposited on the mold plate member 3 having the grooves 5 using a vacuum sputtering apparatus to form a seed layer on the surface of the photosensitive dry film 4 and the side and bottom surfaces of the grooves 5. Wherein the deposition temperature is controlled below 150 ℃, and after vacuum sputtering, the surface of the mold plate 3 forming the seed layer is degreased and cleaned by plasma dry processing.

s5: a thick copper layer 8 is electroplated on the seed layer. Wherein the electroplating solution is an acidic electroplating solution.

s6: and (3) flashing the thick copper layer 8 by using a wet flashing liquid, etching the titanium thin layer 6 and the copper thin layer 7 by using a dry method, and removing the photosensitive dry film 4 by using a film removing liquid to finish the circuit manufacturing. Wherein the membrane removing solution is NaOH solution, and the flash etching solution is H₂SO₄-H₂O₂And (4) etching liquid.

In summary, the board-level fan-out type packaging fine circuit manufacturing method of the invention has the following advantages:

1. the fine circuit is prepared by adopting the method of chip offset photoetching compensation, photosensitive dry film pasting, exposure developing, vacuum sputtering of the titanium thin layer 6 and the copper thin layer, thick copper layer electroplating, thick copper layer wet flash etching, dry etching of the titanium thin layer and the copper thin layer and photosensitive dry film removing, because the offset photoetching compensation can accurately confirm the position of the chip 1 on the board, the exposure error caused by offset is avoided, the problem of side etching in the traditional semi-additive method for removing the seed layer is effectively solved, the circuit with the line width and line distance of 15 mu m/15 mu m and below precision can be prepared, and the problem of side etching (Under Cut) is fundamentally solved.

2. The seed layer is prepared by adopting a vacuum sputtering method, so that the problem that the photosensitive dry film 4 is corroded by chemical coating liquid during chemical copper plating is solved; because the seed layer has part to form on sensitization dry film 4, sensitization dry film 4 is acid-resistant not alkali-fast, adopts low temperature vacuum sputtering titanium thin layer 6 and copper thin layer 7, can protect sensitization dry film 4 not influenced in the realization process.

Any combination of the various embodiments of the present invention should be considered as disclosed in the present invention, unless the inventive concept is contrary to the present invention; within the scope of the technical idea of the invention, any combination of various simple modifications and different embodiments of the technical solution without departing from the inventive idea of the present invention shall fall within the protection scope of the present invention.