阅读说明：本技术 热屏蔽部件、单晶提拉装置及单晶硅锭的制造方法 (Heat shield member, single crystal pulling apparatus, and method for manufacturing single crystal silicon ingot ) 是由 梶原薰 末若良太 仓垣俊二 田边一美 于 2018-03-16 设计创作，主要内容包括：本发明提出一种能够扩大可获得无缺陷的单晶硅的晶体的提拉速度的界限的热屏蔽部件、单晶提拉装置及使用该单晶提拉装置的单晶硅锭的制造方法。本发明的热屏蔽部件(1)设置在从被配置于石英坩埚的周围的加热器加热并贮存在石英坩埚的硅熔液提拉单晶硅锭(I)的单晶提拉装置中,该热屏蔽部件(1)具备包围单晶硅锭的外周面的圆筒状的筒部(2)及在筒部(2)下部的环状的隆起部(3),该热屏蔽部件(1)的特征在于,隆起部(3)具有上壁(3a)、底壁(3b)及2个纵壁(3c、3d),在被这些壁所围成的空间具有环状的隔热材料(H),与单晶硅锭(I)相邻的一侧的纵壁(3c)和隔热材料(H)之间具有空隙。(The invention provides a heat shield member capable of enlarging the limit of a pulling rate of a crystal from which a defect-free single crystal silicon can be obtained, a single crystal pulling apparatus, and a method for manufacturing a single crystal silicon ingot using the single crystal pulling apparatus. A heat shield member (1) is provided in a single crystal pulling apparatus for pulling a silicon single crystal ingot (I) from a silicon melt stored in a quartz crucible and heated by a heater disposed around the quartz crucible, the heat shield member (1) comprising a cylindrical tube part (2) surrounding the outer peripheral surface of the silicon single crystal ingot and an annular ridge part (3) at the lower part of the tube part (2), the heat shield member (1) being characterized in that the ridge part (3) has an upper wall (3 a), a bottom wall (3 b) and 2 vertical walls (3 c, 3 d), an annular heat insulating material (H) is provided in a space surrounded by the walls, and a space is provided between the vertical wall (3 c) on the side adjacent to the silicon single crystal ingot (I) and the heat insulating material (H).)

1. A heat shield member provided in a single crystal pulling apparatus for pulling a single crystal silicon ingot from a silicon melt stored in a quartz crucible and heated by a heater disposed around the quartz crucible, the heat shield member including a cylindrical tube portion surrounding an outer peripheral surface of the single crystal silicon ingot and an annular ridge portion at a lower portion of the tube portion, the heat shield member being characterized in that,

The raised part has an upper wall, a bottom wall and 2 vertical walls, and a space surrounded by the walls is provided with an annular heat insulating material,

A gap is formed between the vertical wall of one side adjacent to the monocrystalline silicon ingot and the heat insulating material.

2. A heat shield member provided in a single crystal pulling apparatus for pulling a single crystal silicon ingot from a silicon melt stored in a quartz crucible and heated by a heater disposed around the quartz crucible, the heat shield member including a cylindrical tube portion surrounding an outer peripheral surface of the single crystal silicon ingot and an annular ridge portion at a lower portion of the tube portion, the heat shield member being characterized in that,

The raised part has an upper wall, a bottom wall and 2 vertical walls, and a space surrounded by the walls is provided with an annular heat insulating material,

The surface of the heat insulating material side of the vertical wall on the side adjacent to the single crystal silicon ingot is in contact with the heat insulating material,

The difference between the opening diameter of the heat shield member and the opening diameter of the heat insulating material is larger than 5 mm.

3. The heat shield as set forth in claim 1 or 2,

The vertical wall and the bottom wall of the side adjacent to the single crystal silicon ingot are integrally formed.

4. The heat shield member according to any one of claims 1 to 3,

The longitudinal wall of the side adjacent to the single crystal silicon ingot has a carbon material.

5. A single crystal pulling apparatus provided with the heat shield member as recited in any one of claims 1 to 4.

6. A method for manufacturing a single crystal silicon ingot, characterized by using the single crystal pulling apparatus according to claim 5.

Technical Field

The present invention relates to a heat shield member, a single crystal pulling apparatus, and a method for manufacturing a single crystal silicon ingot using the single crystal pulling apparatus.

Background

Generally, a silicon wafer obtained by subjecting a single crystal silicon ingot grown by a Czochralski (CZ) method to a wafer processing process is used as a substrate of a semiconductor device.

Fig. 1 shows an example of a general single crystal pulling apparatus for growing a single crystal silicon ingot by the CZ method. The single crystal pulling apparatus 100 shown in the figure is provided with a crucible 52 for containing a raw material substance of a single crystal silicon ingot I in a chamber 51, and the crucible 52 shown in the figure is composed of a quartz crucible 52a and a graphite crucible 52 b. A crucible rotating and lifting shaft 53 is attached to a lower portion of the crucible 52, and the crucible rotating and lifting shaft 53 rotates the crucible 52 in the circumferential direction and lifts and lowers the crucible 52 in the vertical direction. A heater 54 is disposed around the crucible 52 to heat the raw material substance contained in the crucible 52 to produce a silicon melt M.

a pulling shaft 55 for pulling the silicon single crystal ingot I is provided in the upper part of the chamber 51, and a seed crystal S is held by a seed crystal holder 56 fixed to the tip thereof. A gas inlet 57 and a gas outlet 58 are provided in the upper and lower portions of the chamber 51, respectively, and an inert gas is supplied into the chamber 51 from the gas inlet 57 and is discharged from the gas outlet 58 along the outer peripheral surface of the ingot I during the growth of the silicon single crystal ingot I.

Further, a cylindrical heat shield member 60 surrounding the outer peripheral surface of the ingot I being grown is provided in the chamber 51. Fig. 2 shows an example of the structure of a conventional heat shield 60. The heat shield member 60 shown in the figure includes a cylindrical tube portion 61 surrounding the outer peripheral surface of the single crystal silicon ingot I, and a raised portion 62 at the lower portion of the tube portion 61 (see, for example, patent document 1). Here, the cylindrical portion 61 has an inner wall 61a and an outer wall 61 b. The ridge portion 62 has an upper wall 62a, a bottom wall 62b, and 2 vertical walls 62c and 62 d. A heat insulating material (heat storage member) H is provided in a space surrounded by these walls.

The heat shield member 60 shields radiant heat from the heater 54, the silicon melt M, and the side wall of the crucible 52, promotes cooling of the pulled silicon single crystal ingot I, and keeps the outer peripheral surface of the ingot I warm by the heat insulating material H of the ridge portion 62 heated by the heater 54 or the silicon melt M, thereby suppressing an increase in the difference in temperature gradient in the crystal axis direction between the center portion and the outer peripheral portion of the silicon single crystal ingot I.

The growth of the silicon single crystal ingot I is carried out as follows using the apparatus 100 described above. First, a raw material substance such as polycrystalline silicon contained in the crucible 52 is heated and melted by the heater 54 while maintaining an inert gas atmosphere such as Ar gas under reduced pressure in the chamber 51, thereby producing a silicon melt M. Next, the pulling shaft 55 is lowered to immerse the seed crystal S in the silicon melt M, and the pulling shaft 55 is pulled upward while rotating the crucible 52 and the pulling shaft 55 in a predetermined direction. In this way, the single crystal silicon ingot I can be grown below the seed crystal S.

In the silicon single crystal ingot I Grown by using the apparatus 100, various kinds of Grown-in defects which cause problems in the device formation process are formed. The distribution of Grown-in defects in the radial direction of the ingot I is known to depend on 2 factors, namely, the crystal pulling rate V and the temperature gradient G in the pulling direction in the single crystal at the solid-liquid interface (see, for example, non-patent document 1).

FIG. 3 is a graph showing the relationship between the ratio V/G of the pulling rate V to the temperature gradient G in the solid-liquid interface and the crystal region constituting the silicon single crystal ingot I. As shown in the figure, when the V/G value of the single Crystal silicon ingot is large, the single Crystal silicon ingot is dominated by a COP generation region 71 which is a Crystal region where voids are formed and a particle (COP) caused by the Crystal is detected.

When the V/G value is reduced and a specific Oxidation heat treatment is performed, an OSF latent nucleus region 72 in a ring-shaped distribution called an Oxidation Induced Stacking Fault defect (OSF) is formed, and COP is not detected in the OSF region 72.

when the V/G value is further reduced, an oxygen precipitation promoting region (hereinafter also referred to as "Pv region") 73, which is a crystal region where oxygen precipitates are present and COPs are not detected, is formed, an oxygen precipitation suppressing region (hereinafter also referred to as "Pi region") 74, which is a crystal region where oxygen precipitation is less likely to occur and COPs are not detected, is formed, and a dislocation cluster region 75, which is a crystal region where dislocation clusters are detected, is formed.

In the silicon wafer obtained from the single crystal silicon ingot I showing such defect distribution corresponding to V/G, the crystal regions other than the COP occurrence region 71 and the dislocation cluster region 75 are generally regarded as the crystal regions of the defect-free region having no defects, and the silicon wafer obtained from these crystal regions can be generally regarded as the defect-free silicon wafer.

Disclosure of Invention

Technical problem to be solved by the invention

Since the difference between the V/G value in the COP generation region 71 and the V/G value in the dislocation cluster region 75 is very small, the pulling rate V must be strictly controlled in order to grow a defect-free single crystal silicon ingot I. However, such control of the pulling rate V is very difficult, and it is desired to propose a method capable of expanding the range (limit) of the pulling rate V in which a defect-free single crystal silicon ingot I can be obtained.

Accordingly, an object of the present invention is to provide a heat shield member capable of extending the limit of the pulling rate of a crystal from which a defect-free single crystal silicon can be obtained, a single crystal pulling apparatus, and a method for producing a single crystal silicon ingot using the single crystal pulling apparatus.

Means for solving the technical problem

the gist of the present invention for solving the above-described technical problems is as follows.

[1] A heat shield member provided in a single crystal pulling apparatus for pulling a single crystal silicon ingot from a silicon melt stored in a quartz crucible and heated by a heater disposed around the quartz crucible, the heat shield member including a cylindrical tube portion surrounding an outer peripheral surface of the single crystal silicon ingot and an annular ridge portion at a lower portion of the tube portion, the heat shield member being characterized in that,

The raised part has an upper wall, a bottom wall and 2 vertical walls, and a space surrounded by the walls is provided with an annular heat insulating material,

A gap is formed between the vertical wall of one side adjacent to the monocrystalline silicon ingot and the heat insulating material.

[2] A heat shield member provided in a single crystal pulling apparatus for pulling a single crystal silicon ingot from a silicon melt stored in a quartz crucible and heated by a heater disposed around the quartz crucible, the heat shield member including a cylindrical tube portion surrounding an outer peripheral surface of the single crystal silicon ingot and an annular ridge portion at a lower portion of the tube portion, the heat shield member being characterized in that,

The raised part has an upper wall, a bottom wall and 2 vertical walls, and a space surrounded by the walls is provided with an annular heat insulating material,

The surface of the heat insulating material side of the vertical wall on the side adjacent to the single crystal silicon ingot is in contact with the heat insulating material,

The difference between the opening radius of the heat shield member and the opening radius of the heat insulating material is larger than 5 mm.

[3] The heat shield member according to the claim 1 or 2, wherein,

The vertical wall and the bottom wall of the side adjacent to the single crystal silicon ingot are integrally formed.

[4] The heat shield member according to any one of claims 1 to 3, wherein,

the longitudinal wall of the side adjacent to the single crystal silicon ingot has a carbon material.

[5] a single crystal pulling apparatus comprising the heat shield member described in any one of 1 to 4.

[6] A method for manufacturing a single crystal silicon ingot, characterized by using the single crystal pulling apparatus according to claim 5.

Effects of the invention

According to the present invention, the limit of the pulling rate of a crystal from which a defect-free silicon single crystal ingot can be obtained can be increased.

Drawings

FIG. 1 is a view showing an example of a general single crystal pulling apparatus.

Fig. 2 is a view showing an example of the heat shield member.

FIG. 3 is a graph showing the relationship between the ratio of the pulling rate to the temperature gradient in the solid-liquid interface and the crystal region constituting the single crystal silicon ingot.

FIG. 4 (a) is a graph showing an example of the stress distribution in a single crystal silicon ingot, and FIG. 4 (b) is an ideal temperature gradient G_idealAn example of the method (3).

Fig. 5 is a view showing an example of a heat shield member according to the present invention.

Fig. 6 is a view showing another example of the heat shield member according to the present invention.

Fig. 7 is a view showing a heat shield member in which a vertical wall and a bottom wall are integrally formed.

FIG. 8 is a graph showing the temperature gradient of a single crystal silicon ingot during growth using the single crystal pulling apparatus provided with the heat shield shown in FIG. 5.

Fig. 9 is a view showing a temperature gradient of a single crystal silicon ingot when the single crystal silicon ingot is grown by using the heat shield member shown in fig. 6.

Detailed Description

Hereinafter, embodiments of the present invention will be described with reference to the drawings. The heat shield member according to the present invention is a heat shield member provided in a single crystal pulling apparatus for pulling a single crystal silicon ingot from a silicon melt stored in a quartz crucible while being heated by a heater disposed around the quartz crucible, and the heat shield member includes a cylindrical tube portion surrounding an outer peripheral surface of the single crystal silicon ingot and an annular ridge portion at a lower portion of the tube portion. Here, the raised portion has an upper wall, a bottom wall, and 2 vertical walls, and an annular heat insulating material is provided in a space surrounded by these walls.

as described above, the radial distribution of crystal defects in the silicon single crystal ingot I depends on the ratio V/G of the pulling rate V to the temperature gradient G. Here, the pulling rate V determines the amount of interstitial silicon and holes introduced into the ingot I. In contrast, the temperature gradient G determines the diffusion rate of interstitial silicon and holes.

The limit of the pulling rate V of the crystal from which a defect-free single crystal silicon ingot I can be obtained (hereinafter also simply referred to as "pulling rate limit") can be expanded by flattening the radial distribution of crystal defects in the ingot I (flat). Critical (V/G) to achieve planarization of the radial distribution of the crystal defects_criCan be theoretically determined from the condition that the hole concentration and the concentration of intergranular silicon become equal, and is obtained from the following formula (1) (for example, refer to K. Nakamura, R. Suewaka and B. Ko, ECS SolidState Letters, 3 (3) N5-N7 (2014)).

[ numerical formula 1]

Here, σ_meanStress at any location within the crystal.

as can be seen from the formula (1), the interstitial silicon concentration and the hole concentration become equal (V/G)_criDepending on the stress in the crystal. Above (V/G)_crithe stress distribution in the crystal can be obtained by calculation of thermal conductivity or the like. Further, an ideal temperature gradient (hereinafter, also referred to as "ideal temperature gradient G") for achieving flattening of the radial distribution of crystal defects_ideal". ) Due to the pulling velocity VSince the radial direction of the ingot I is constant, it can be obtained from the above formula (1).

[ numerical formula 2]

fig. 4 (a) shows an example of the stress distribution in the crystal, and fig. 4 (b) shows an example of an ideal temperature gradient. If the ideal temperature gradient G as shown in FIG. 4 (b) can be achieved_idealBy pulling up the silicon single crystal ingot I at the corresponding pulling-up rate V, the radial distribution of crystal defects in the ingot I can be flattened and the pulling-up rate limit can be maximized.

The temperature gradient G of the silicon single crystal ingot I depends on the structure of the heat shielding member 60. The inventors of the present invention have made an attempt to realize the above-mentioned ideal temperature gradient G_idealThe relationship between the structure of the heat shielding member 60 and the temperature gradient G was carefully analyzed. As a result, it is determined that the radius R of the opening O through which the ingot I is inserted in the heat shield 60 is increased (hereinafter, also referred to as "opening radius") R_sBringing the temperature gradient G close to G_ideal. Further, the opening radius R is_sIs the radius of the opening at the ridge 62.

It has also been found that if the opening radius R is used_sWhen the silicon single crystal ingot I is grown with a larger heat shield than in the prior art, the radial distribution of crystal defects becomes flatter, and the pulling rate limit is expanded.

Thus, by enlarging the opening radius R_sAlthough the pulling rate limit can be increased, problems such as crystal bending and crystal deformation newly occur. This is considered to be because, when the opening radius R is increased_sIn this case, the low temperature portion in single crystal pulling apparatus 100 that is visible from silicon melt M increases, and silicon melt M is cooled, and the temperature of silicon melt M becomes unstable. For the purpose of stabilizing the temperature of silicon melt M, opening radius R is reduced_sis effective.

In this way, in order to widen the pulling rate limit, the opening radius R of the raised portion 62 of the heat shielding member 60 is increased_sIs effective against this, the crystal bending or crystal deformation is suppressedfrom the viewpoint of shape, the opening radius R is reduced_sThis is effective, and it is determined from this that the expansion of the pulling rate limit and the suppression of crystal warp or crystal deformation are in a trade-off relationship.

Therefore, the present inventors have intensively studied a method for extending the pulling rate limit without causing crystal warpage or crystal deformation. As a result, it is thought that the opening radius R of the heat shielding member 60 is not changed_sWhile the opening radius R of the heat insulating material H is reduced_hEnlarging the method.

As described above, the temperature gradient G of the silicon single crystal ingot I depends on the structure of the heat shield member 60, but the temperature gradient G is determined by the heat shield material H that controls the heat input to the surface of the silicon single crystal ingot I. On the other hand, in order to stabilize the temperature of the silicon melt M, it is effective to increase the flow rate of the inert gas such as Ar gas flowing between the silicon single crystal ingot I and the heat shielding member 60, and the flow rate of the inert gas depends on the outer shape of the heat shielding member 60.

Accordingly, the present inventors found that the opening radius R of the heat shielding member 60 is not changed_SWhile the opening radius R of the heat insulating material H is reduced_hThereby, the temperature gradient G can be made close to the ideal temperature gradient G while suppressing the crystal warp or crystal deformation_idealThereby expanding the pulling rate limit, and the present invention has been completed.

Fig. 5 shows an example of a heat shield member according to the present invention. The heat shield member 1 shown in the figure includes a cylindrical tube 2 surrounding the outer peripheral surface of the single crystal silicon ingot I, and a ridge portion 3 at the lower portion of the tube 2. Here, the cylindrical portion 2 has an inner wall 2a and an outer wall 2b, and a heat insulating material H is provided therebetween. The raised portion 3 has an upper wall 3a, a bottom wall 3b, and 2 vertical walls 3c and 3d, and an annular heat insulating material H is provided in a space surrounded by these walls. The heat shield member 1 is configured such that the vertical wall 3c is adjacent to the ingot I.

In the heat shield member 1 shown in fig. 5, a gap (space) V is provided between the vertical wall 3c and the heat insulating material H. This enables the opening radius R of the heat insulating material H to be set_hIncreased to make the temperature gradient G of the ingot I close to the ideal temperature gradient G_idealthereby expanding the pulling rate limit. And, heatOpening radius R of shield member 1_sAs in the conventional case, the flow rate of the inert gas flowing between the ingot I and the heat shield 1 is maintained, and thereby the crystal bending or crystal deformation can be suppressed.

In the conventional heat shield 60, the wall covering the heat insulator H is only a covering member for preventing a part of the heat insulator H from falling into the silicon melt M, and the opening radius R of the heat shield 60 is not changed_sThe opening radius R of the heat insulating material H is set_hthe present invention, which enlarges the opening radius to generate difference, is not existed before.

In addition, as shown in fig. 5, the opening radius R of the heat shield member 1_sThe opening radius R of the heat insulator H is the distance from the central axis A of the ingot I (i.e., the pulling axis of the pulling device) to the ingot I-side surface of the vertical wall 3c_his the distance from the central axis A of the ingot I to the inner wall surface of the heat insulating material H.

In the heat shield member 1 according to the present invention, the opening radius R of the heat shield member 1_sOpening radius R of heat insulating material H_hDifference of difference R_dIt is only necessary to be larger than the conventional heat shield 60. This can be achieved in the heat shield 1 shown in fig. 5 by providing a gap V between the vertical wall 3c and the heat insulating material H.

As described above, in the conventional heat shield 60 illustrated in fig. 2, the walls 62a to 62d are merely covering members for preventing a part of the heat insulator H from falling into the silicon melt M, and the heat insulator H is filled in the space surrounded by these walls without a gap. Each of these walls is different depending on one of the walls 62a to 62d, but is formed to have a thickness of approximately 5mm to 10 mm.

Therefore, the opening radius R of the heat shielding member 1_sOpening radius R of heat insulating material H_hDifference of difference R_dDepending on the thickness of the vertical wall 3c, for example, it can be set to be larger than 5mm, larger than 6mm, larger than 7mm, larger than 8mm, larger than 9mm, larger than 10mm, 12mm or more, or 15mm or more.

In the present invention, the opening radius of the heat insulating material H is set to be larger than that of the heat insulating material H in the conventional heat shield member 60, and crystal defects are causedThe radial distribution of (a) is flat, thereby expanding the pull rate limit. From the viewpoint of further expanding the pulling rate limit, the difference R between the aperture radii_dPreferably 25mm or more, more preferably 70mm or more. Further, from the viewpoint of preventing dislocation of the pulled crystal accompanying an increase in the thermal load of the quartz crucible due to removal of the heat insulating material, the difference R in the aperture radius_dPreferably 200mm or less, more preferably 150mm or less.

Among the walls constituting the outer shape of the heat shield member 1, at least the vertical wall 3c is preferably made of a material having high thermal conductivity in order to transmit the radiant heat from the silicon melt M to the outer peripheral surface of the silicon single crystal ingot I well. Further, the bottom wall 3b is also preferably made of a material having high thermal conductivity.

Examples of the material having high thermal conductivity include a carbon material such as graphite and a metal such as molybdenum (Mo). Among these, the wall is preferably made of the carbon material because of less contamination.

The opening radius of the bulge portion of the heat shield member 1 is preferably 340mm to 460 mm. This increases the flow rate of the inert gas such as Ar gas flowing between the silicon single crystal ingot I and the heat shield member, and improves the stability of the temperature of the silicon melt M. More preferably 350mm or more and 450mm or less.

The opening radius of the heat insulating material H is preferably 355mm to 475 mm. This increases the flow rate of the inert gas such as Ar gas flowing between the silicon single crystal ingot I and the heat shield member, and improves the stability of the temperature of the silicon melt M. More preferably 365mm to 465 mm.

Fig. 6 shows another example of the heat shield member according to the present invention. In addition, the same reference numerals are given to the same structures as those of the heat shield member 1 shown in fig. 5. In the heat shield 10 shown in the figure, unlike the heat shield 1 shown in fig. 5, no space (space) V is provided between the vertical wall 3c and the heat insulating material H. Instead, the thickness of the vertical wall 3c is made thicker than conventional ones, and the vertical wall 3c is configured to be in contact with the heat insulator H. Thereby, the opening radius R of the heat insulating material H is set to be equal to that of the heat shielding member 1_hIs larger than beforeThe boundary of the pulling rate at which defect-free crystalline silicon can be obtained can be expanded while suppressing crystal warp or crystal defects.

Further, as shown in fig. 7, the heat shield 20 is preferably formed integrally with the vertical wall 3c and the bottom wall 3b on the side adjacent to the single crystal silicon ingot I. This makes it possible to more easily transfer radiant heat from the bottom wall 3b to the ingot I and to bring the temperature gradient G closer to the ideal temperature gradient G_ideal. The same is true with respect to the heat shield member 1 shown in fig. 5.

In the heat shield members 1, 10, and 20 shown in fig. 5 to 7, the ridge portion 3 is raised inside the tube, but a heat shield member in which the ridge portion 3 is raised outside the tube is also included in the present invention.

(Single crystal pulling apparatus)

The single crystal pulling apparatus according to the present invention is characterized by comprising the heat shield member according to the present invention described above. Therefore, the structure other than the heat shield member is not limited, and a desired single crystal silicon ingot can be grown by appropriately configuring the structure.

For example, in the single crystal pulling apparatus 100 shown in fig. 1, the single crystal pulling apparatus according to the present invention can be obtained by applying the heat shielding members 1, 10 and 20 according to the present invention illustrated in fig. 5 to 7 instead of the heat shielding member 60. Further, by using the single crystal pulling apparatus according to the present invention, it is possible to grow a defect-free single crystal silicon ingot while suppressing crystal deformation.

(method for producing silicon Single Crystal)

Further, the method for manufacturing a silicon single crystal according to the present invention is characterized by manufacturing a silicon crystal using the above-described single crystal pulling apparatus according to the present invention. Therefore, the portion other than the portion using the single crystal pulling apparatus according to the present invention is not limited, and a desired single crystal silicon ingot can be grown by appropriately configuring the portion.

For example, in the single crystal pulling apparatus 100 shown in fig. 1, a single crystal silicon ingot can be produced as follows, using an apparatus to which the heat shield member 1 according to the present invention illustrated in fig. 5 or the heat shield member 10 according to the present invention illustrated in fig. 6 is applied, instead of the heat shield member 60. First, a raw material substance such as polycrystalline silicon contained in the crucible 52 is heated and melted by the heater 54 while maintaining an inert gas atmosphere such as Ar gas under reduced pressure in the chamber 51, thereby producing a silicon melt M. Next, the pulling shaft 55 is lowered to immerse the seed crystal S in the silicon melt M, the crucible 52 and the pulling shaft 55 are rotated in a predetermined direction, and the pulling shaft 55 is pulled upward. Thus, a defect-free silicon single crystal ingot can be grown while suppressing crystal warp and crystal deformation.