阅读说明：本技术 一种用于整流电路的折叠空间电荷区肖特基二极管及整流电路 (folding space charge region Schottky diode for rectifying circuit and rectifying circuit ) 是由 左瑜 冉文方 于 2019-07-12 设计创作，主要内容包括：本发明涉及一种用于整流电路的折叠空间电荷区肖特基二极管,包括：衬底、绝缘层、外延层、第一金属电极、第二金属电极、第一凹槽,其中,所述绝缘层、所述外延层依次层叠设置于所述衬底上；所述第一凹槽设置于所述外延层上,且所述第一凹槽内填充有绝缘材料；所述第一金属电极设置于所述外延层上,且设置于所述第一凹槽的一侧,且所述第一金属电极的下表面与所述外延层的上表面接触；所述第二金属电极设置于所述外延层上,且设置于所述第一凹槽的另一侧。本发明所设计的折叠空间电荷区肖特基二极管通过减小肖特基整流二极管的结电容,提高微波无线能量传输系统中的能量转化效率。(the invention relates to a folded space charge region Schottky diode for a rectifying circuit, which comprises: the device comprises a substrate, an insulating layer, an epitaxial layer, a first metal electrode, a second metal electrode and a first groove, wherein the insulating layer and the epitaxial layer are sequentially stacked on the substrate; the first groove is arranged on the epitaxial layer, and insulating materials are filled in the first groove; the first metal electrode is arranged on the epitaxial layer and arranged on one side of the first groove, and the lower surface of the first metal electrode is in contact with the upper surface of the epitaxial layer; the second metal electrode is arranged on the epitaxial layer and arranged on the other side of the first groove. The Schottky diode in the folding space charge area designed by the invention improves the energy conversion efficiency in the microwave wireless energy transmission system by reducing the junction capacitance of the Schottky rectifier diode.)

1. A folded space charge region schottky diode for a rectifier circuit, comprising: a substrate (001), an insulating layer (002), an epitaxial layer (003), a first metal electrode (004), a second metal electrode (005), a first recess (006), wherein,

The insulating layer (002) and the epitaxial layer (003) are sequentially stacked on the substrate (001);

the first groove (006) is arranged on the epitaxial layer (003), and the first groove (006) is filled with an insulating material;

The first metal electrode (004) is arranged on the epitaxial layer (003) and is arranged at one side of the first groove (006), and the lower surface of the first metal electrode (004) is in contact with the upper surface of the epitaxial layer (003);

the second metal electrode (005) is disposed on the epitaxial layer (003) and disposed on the other side of the first recess (006).

2. The folded space charge region schottky diode of claim 1, wherein the epitaxial layer (003) has a thickness of 0.3 to 0.5 μm, and the first recess (006) has a thickness of 0.05 to 0.15 μm.

3. Folded space charge region schottky diode according to claim 1, wherein the material of the epitaxial layer (003) is any of Ge, GeSn, GaAs.

4. The folded space charge region schottky diode of claim 1 wherein the epitaxial layer (003) comprises: first doped region (0031) and second doped region (0032), first doped region (0031) set up in one side of epitaxial layer (003), just first doped region (0031) with first metal electrode (004) contact, second doped region (0032) set up in the other side of epitaxial layer (003), just second doped region (0032) with second metal electrode (005) contact.

5. the folded space charge region schottky diode of claim 1 wherein a lower surface of the second metal electrode (005) is in contact with an upper surface of the epitaxial layer (003).

6. The folded space charge region schottky diode of claim 1 wherein the epitaxial layer (003) comprises: a second groove (007), wherein the second groove (007) is arranged on the second doped region (0032), and the thickness of the second groove (007) is 1/4-1/3 of the thickness of the first groove (006).

7. The folded space charge region schottky diode of claim 6, wherein the second metal electrode (005) is disposed within the second groove (007), and wherein a side surface and a bottom surface of the second metal electrode (005) are in contact with the second groove (007).

8. The folded space charge region schottky diode of claim 3 wherein when the epitaxial layer (003) is Ge or GeSn, the first metal electrode (004) is an Al electrode and the second metal electrode (005) is a W electrode;

When the epitaxial layer (003) is made of GaAs, the first metal electrode (004) is an Al electrode, and the second metal electrode (005) is any one of a Pt electrode, a Ti electrode and an Au electrode.

9. The folded space charge region schottky diode of claim 1, wherein a cross-sectional area from a bottom surface of the first recess (006) to a bottom surface of the epitaxial layer (003) is smaller than a bottom surface area of the second metal electrode (005).

10. a rectifier circuit comprising the folded space charge region schottky diode according to any one of claims 1 to 9.

Technical Field

The invention belongs to the technical field of wireless transmission, and particularly relates to a folding space charge region Schottky diode for a rectifying circuit and the rectifying circuit.

Background

the inexhaustible electromagnetic waves exist in the free space, and how to convert the electromagnetic waves into the energy of electronic equipment is particularly important under the condition that the energy crisis is increasingly appearing nowadays. The microwave wireless energy transmission system can directly convert free electromagnetic energy in the environment into direct current, is not limited by a transmission line when transmitting electric energy, is simple and convenient, has strong flexibility and long transmission distance, reduces the erection of the transmission line, does not need to frequently replace a battery and the like, but still has the focus and key point of the research on the current microwave wireless energy transmission system on how to improve the energy conversion efficiency. The microwave wireless energy transmission system consists of a receiving antenna, a matching circuit and a rectifying circuit, so that the energy conversion efficiency of the whole system can be improved by improving the conversion efficiency of different components in the system.

in recent years, many studies on the energy conversion efficiency of a schottky diode, which is a key component in a rectifying circuit, are made at home and abroad. Schottky diodes are devices that use a particular metal semiconductor formed between a particular metal and an N-type semiconductor with a contact barrier, referred to as the schottky barrier, formed between the metal and the semiconductor, and this contact, also referred to as the rectifying contact. Compared with a general PN junction diode, the Schottky diode has the characteristics of small turn-on voltage, good frequency characteristic and high rectification efficiency. The Ge Schottky rectifier diode has a simple structure and low manufacturing cost, and the series products of the Ge Schottky rectifier diode are applicable to radio frequency environments from high energy density to low energy density and even ultra-low energy density, and are common rectifier diodes of microwave infinite energy transfer (MWPT) systems. However, the prior art for improving the energy conversion efficiency from the perspective of Ge schottky rectifier diodes has not been found yet.

Disclosure of Invention

in order to solve the above problems in the prior art, the present invention provides a folded space charge region schottky diode for a rectifier circuit and a rectifier circuit. The technical problem to be solved by the invention is realized by the following technical scheme:

The embodiment of the invention provides a folding space charge region Schottky diode for a rectifying circuit, which comprises: a substrate, an insulating layer, an epitaxial layer, a first metal electrode, a second metal electrode, and a first groove,

The insulating layer and the epitaxial layer are sequentially stacked on the substrate;

The first groove is arranged on the epitaxial layer, and insulating materials are filled in the first groove;

The first metal electrode is arranged on the epitaxial layer and arranged on one side of the first groove, and the lower surface of the first metal electrode is in contact with the upper surface of the epitaxial layer;

The second metal electrode is arranged on the epitaxial layer and arranged on the other side of the first groove.

In an embodiment of the invention, the thickness of the epitaxial layer is 0.3 to 0.5 μm, and the thickness of the first groove is 0.05 to 0.15 μm.

In one embodiment of the invention, the material of the epitaxial layer is any one of Ge, GeSn and GaAs.

In one embodiment of the present invention, the epitaxial layer comprises: the epitaxial layer comprises a first doping area and a second doping area, wherein the first doping area is arranged on one side of the epitaxial layer and is in contact with the first metal electrode, the second doping area is arranged on the other side of the epitaxial layer and is in contact with the second metal electrode.

in one embodiment of the invention, the lower surface of the second metal electrode is in contact with the upper surface of the epitaxial layer;

In one embodiment of the present invention, the epitaxial layer comprises: and the second groove is arranged on the second doping region, and the thickness of the second groove is 1/4-1/3 of that of the first groove.

In one embodiment of the present invention, the second metal electrode is disposed in the second groove, and both a side surface and a bottom surface of the second metal electrode are in contact with an inner surface of the second groove.

In an embodiment of the invention, when the material of the epitaxial layer is Ge or GeSn, the first metal electrode is an Al electrode, and the second metal electrode is a W electrode; when the epitaxial layer is made of GaAs, the first metal electrode is an Al electrode, and the second metal electrode is any one of a Pt electrode, a Ti electrode and an Au electrode.

In one embodiment of the present invention, a cross-sectional area from the bottom surface of the first groove to the bottom surface of the epitaxial layer is smaller than an area of the bottom surface of the second metal electrode.

another embodiment of the present invention provides a rectifier circuit including a folded space charge region schottky diode for a rectifier circuit as described in any of the above embodiments.

Compared with the prior art, the invention has the beneficial effects that:

1. The folding space charge region Schottky diode designed by the invention forms the longitudinal space charge region and the transverse space charge region by folding the longitudinal space charge region, reduces the junction capacitance of the Schottky rectifier diode and improves the energy conversion efficiency of a rectifier circuit which takes the Schottky rectifier diode as a key device in a microwave wireless energy transmission system.

2. According to the folding space charge region Schottky diode designed by the invention, the metal electrode at the Schottky contact position is arranged in the groove, so that the conduction current is increased, the series resistance is reduced, and the energy conversion efficiency of the Schottky diode is further improved.

3. on the basis of structural improvement, the Schottky diode with the folded space charge region not only realizes gradual improvement of the conversion efficiency of the Schottky diode, but also can realize the purpose that the Schottky diode works under different frequencies by selecting different epitaxial layer materials.

drawings

fig. 1 is a schematic structural diagram of a folded space charge region schottky diode according to an embodiment of the present invention;

fig. 2 is a detailed structural diagram of another folded space charge region schottky diode according to an embodiment of the present invention;

Fig. 3 is a graph comparing the energy conversion efficiency of a folded space charge region schottky diode with different epitaxial layers according to an embodiment of the present invention with that of a conventional schottky diode;

Fig. 4 is a detailed structural diagram of a folded space charge region schottky diode according to another embodiment of the present invention;

FIG. 5 is a schematic diagram of an equivalent circuit model of a folded space charge region Schottky diode according to an embodiment of the present invention;

fig. 6 is a diagram of a capacitance scan simulation result of a Ge schottky diode SPICE model according to an embodiment of the present invention;

Fig. 7 is a simulation result diagram of series resistance scanning of a Ge schottky diode SPICE model according to an embodiment of the present invention;

Fig. 8 is a schematic structural diagram of a junction capacitor of a folded space charge region schottky diode according to an embodiment of the present invention.

Detailed Description

before describing the specific embodiments, the design concept of the present invention will be described.

as introduced in the background art, many studies on the energy conversion efficiency of a schottky diode, which is a key device in a rectifying circuit, are made at home and abroad, but the prior art for improving the energy conversion efficiency from the perspective of a Ge schottky rectifying diode is not found at present.

In view of this, the invention achieves the purpose of higher energy conversion efficiency by improving the structure of the conventional Ge schottky rectifying diode, and further meets the purpose of operating the schottky rectifying diode at multiple frequencies by changing the material of the Ge epitaxial layer on the basis of improving the structure.

The specific structure and effect of the folded space charge region schottky diode of the present invention are detailed in the following embodiments.

the present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.